Semiconductor polishing structure and apparatus

Abstract

The application discloses a semiconductor grinding structure, which comprises a base plate, a rotating platform and a grinding piece; the rotating platform is rotatably installed on the base plate to carry and rotate a silicon wafer to be ground and expose the silicon wafer to the outside; the grinding piece is movably installed above the rotating platform and can contact or separate from the surface of the silicon wafer to be ground; the grinding piece comprises a displacement mechanism, so that the grinding piece can move in the horizontal direction and the vertical direction to control the step-by-step feeding of the grinding piece along the outer edge of the metal layer of the silicon wafer to the center of the metal layer of the silicon wafer to be ground. The application can grind the deposition layer or the metal layer of the silicon wafer layer by layer by the cooperation of the above-mentioned devices, and the whole process does not need to use chemical grinding liquid and grinding suspension, so that the pollution to the environment is effectively avoided, the whole grinding process can be effectively controlled by the operator, and the grinding effect is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a semiconductor grinding structure and equipment. BACKGROUND

[0002] At present, the deposition layer or metal layer on the surface of a silicon wafer is ground by physical grinding and chemical grinding, using a large amount of dry powder suspension and chemical grinding agent, and a large amount of pure water is used for rinsing after the grinding process, causing secondary pollution. In addition, the grinding object is carried out in relatively close contact, specifically, a grinding chamber is provided on a grinding platform, a grinding mechanism is pressed down to cover the silicon wafer, and then grinding is carried out, but the above grinding process is difficult to observe, thereby the grinding effect and quality cannot be effectively controlled.

[0003] Therefore, a semiconductor grinding structure is needed to solve the above problems. SUMMARY

[0004] The present application aims to provide a semiconductor grinding structure and equipment to directly observe the grinding effect of a silicon wafer, improve the grinding quality, and reduce pollution.

[0005] To solve the above technical problems, the present application provides a semiconductor grinding structure, comprising a bottom plate, a rotating platform, and a grinding piece.

[0006] The rotating platform is rotatably installed on the bottom plate to carry and rotate the silicon wafer to be ground, and expose the silicon wafer to be ground to the outside.

[0007] The grinding piece is movably installed above the rotating platform, and the grinding piece can be in contact with or separated from the surface of the silicon wafer to be ground.

[0008] The grinding piece comprises a displacement mechanism, which enables the grinding piece to move in the horizontal and vertical directions to control the grinding piece to gradually feed along the outer edge of the metal layer of the silicon wafer to be ground to the center of the metal layer of the silicon wafer to be ground.

[0009] Further, the grinding piece comprises an output motor, a connecting rod, and a grinding head.

[0010] The output motor is installed on the displacement mechanism.

[0011] One end of the connecting rod is connected to the output end of the output motor, and the other end is connected to the grinding head.

[0012] Further, the output motor is a high-precision silent motor.

[0013] Further, the rotating platform comprises a platform plate, a rotating shaft, and a driving device.

[0014] One end of the rotating shaft is connected with the driving device, and the other end penetrates to the outside of the bottom plate and is fixedly connected with the platform plate.

[0015] The platform plate is provided with a suction accessory to carry the silicon wafer to be polished.

[0016] Further, the driving device is a shaft servo motor.

[0017] Further, the bottom plate is fixedly provided with a fixed ring, and the rotating shaft is rotatably arranged in the fixed ring.

[0018] Further, the platform plate is provided in a disc type structure, and the rotating shaft and the platform plate are coaxially arranged.

[0019] The suction accessory comprises a through hole and a vacuum suction pipe.

[0020] The through hole is arranged at the middle part of the rotating shaft and the platform plate.

[0021] The vacuum suction pipe is arranged at one end of the through hole.

[0022] Further, a gap is reserved between the platform plate and the bottom plate.

[0023] A plurality of supporting balls are arranged in the gap.

[0024] Further, the displacement mechanism is an XY displacement platform.

[0025] The application further provides a semiconductor polishing device comprising at least one set of the semiconductor polishing structure.

[0026] Compared with the prior art, the application has at least the following beneficial effects:

[0027] By arranging the rotating platform and the polishing member, the silicon wafer to be polished and the polishing member are rubbed relative to each other by the rotation of the rotating platform and the rotation of the polishing member, so that the deposition layer or the metal layer of the silicon wafer is polished layer by layer.

[0028] In addition, since the rotating platform can fully expose the silicon wafer to be polished to the outside, and the polishing member continuously feeds from the outer edge of the metal layer of the silicon wafer to the center of the metal layer, the entire polishing process can be effectively observed, and thus the operator can effectively control the entire polishing process to improve the polishing effect.

[0029] Further, since the grinding member has the displacement mechanism, the grinding member can grind the edge and center positions of the silicon wafer to be ground in sections and steps, and the entire surface of the silicon wafer to be ground can be processed to a specified specification according to actual requirements, further improving the grinding effect on the silicon wafer to be ground. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a structural sectional view of the semiconductor grinding structure of the present application;

[0031] Figure 2 is a partial structural schematic view of the semiconductor grinding structure of the present application. DETAILED DESCRIPTION

[0032] The semiconductor grinding structure of the present application will be described in more detail below with reference to the accompanying drawings, in which the preferred embodiments of the present application are shown, and it should be understood that those skilled in the art can modify the present application described herein while still achieving the advantageous effects of the present application. Therefore, the following description should be understood as a broad knowledge for those skilled in the art, and not as a limitation on the present application.

[0033] The present application will be described in more detail in the following paragraphs with reference to the accompanying drawings. The advantages and features of the present application will be more apparent from the following description and claims. It should be noted that the drawings are very simplified and all use non-precise proportions, only to facilitate, clearly assist in the purpose of illustrating the embodiments of the present application.

[0034] As shown in Figure 1 and Figure 2 , the embodiments of the present application propose a semiconductor grinding structure, which comprises a base plate 1, a rotating platform 2 and a grinding member 3.

[0035] The rotating platform 2 is rotatably installed on the base plate 1 to carry and rotate the silicon wafer to be ground, and to expose the silicon wafer to be ground to the outside.

[0036] The grinding member 3 is movably installed above the rotating platform 2, and the grinding member 3 can be in contact with or separated from the surface of the silicon wafer to be ground.

[0037] When the grinding member 3 is in contact with the silicon wafer to be ground, the relative friction between the rotation of the grinding member 3 and the rotation of the silicon wafer to be ground by the rotating platform 2 is used to grind the deposited layer or metal layer of the silicon wafer layer by layer, and the entire process does not use chemical grinding liquid and grinding suspension, thereby effectively achieving the purpose of avoiding environmental pollution.

[0038] Furthermore, since the rotating platform 2 can fully expose the silicon wafer to be polished in the above process, the specific polishing step of the polishing member 3 during the polishing process of the silicon wafer to be polished can be observed by the operator, and thus, compared with the existing technology, the operator can adaptively adjust the position and rotating speed of the polishing member 3 according to the observation to further optimize the polishing step, thereby effectively improving the polishing effect and precision.

[0039] In the embodiment, the polishing member 3 comprises a displacement mechanism, so that the polishing member 3 can move in the horizontal direction and the vertical direction to control the step-by-step feeding of the polishing member 3 along the outer edge of the metal layer of the silicon wafer to the center of the metal layer of the silicon wafer to be polished. That is, the polishing member 3 in the device can be adjusted in precision in the horizontal and vertical directions while rotating at high speed, thereby gradually processing the metal layer of the silicon wafer to be polished.

[0040] Specifically, when the outer part of the metal layer of the silicon wafer to be polished is thicker and the center area is thinner, the polishing member 3 can be first moved downward in the vertical direction to a specified position, and the rotation of the polishing member 3 and the rotation of the rotating platform 2 are used to process the outer edge of the metal layer of the silicon wafer to be polished. When the polishing of the area is completed, the polishing member 3 is finely adjusted in the vertical direction, and continuously fed in the horizontal direction to gradually process the center area of the silicon wafer to be polished, until the entire silicon wafer to be polished meets the use requirements, thereby further improving the polishing effect.

[0041] In the embodiment, a specific polishing member 3 is provided to optimize the polishing effect of the silicon wafer to be polished.

[0042] The polishing member 3 comprises an output motor 31, a connecting rod 32, and a polishing head 33.

[0043] The output motor 31 is fixedly installed on the displacement mechanism in an inclined manner to drive the polishing head 33 to move.

[0044] One end of the connecting rod 32 is connected to the output end of the output motor 31, and the other end is connected to the polishing head 33, that is, the connecting rod 32 and the polishing head 33 are driven to rotate and polish by the output motor 31.

[0045] In the embodiment, the polishing head 33 is provided as a sand page wheel, and other types of polishing heads such as silicon carbide polishing heads can also be provided according to actual use requirements, which will not be described here.

[0046] Optionally, the output motor 31 is a high-precision silent motor to improve the polishing precision of the silicon wafer to be polished.

[0047] The displacement mechanism is arranged as an XY displacement platform, i.e. capable of adjustment in two perpendicular directions in XY, and there are many similar structures in the prior art, which will not be described here.

[0048] In other embodiments, a specific rotating platform 2 is further provided to better carry the silicon wafer to be ground and drive the silicon wafer to be ground to rotate.

[0049] The rotating platform 2 comprises a platform plate 21, a rotating shaft 22 and a driving device.

[0050] One end of the rotating shaft 22 is connected with the driving device, and the other end penetrates to the outside of the bottom plate 1 and is fixedly connected with the platform plate 21, i.e. the platform plate 21 is controlled to rotate by the driving device.

[0051] The platform plate 21 is provided with a suction accessory 4 to carry the silicon wafer to be ground. The silicon wafer to be ground is fixed by suction of the suction accessory 4, so as to rotate with the platform plate 21 to rotate to rub and grind against the grinding head 33.

[0052] The driving device is arranged as a shaft servo motor.

[0053] In this embodiment, the position and material of the rotating shaft 22 are further limited to improve the stability of the rotation of the platform plate 21.

[0054] The bottom plate 1 is fixedly provided with a fixed ring 23, the rotating shaft 22 is rotatably arranged in the fixed ring 23, and the rotating shaft 22 is arranged as an alloy material.

[0055] Further, the platform plate 21 is arranged as a disc structure, and the rotating shaft 22 and the platform plate 21 are coaxially arranged.

[0056] The suction accessory 4 comprises a through hole 41 and a vacuum suction pipe 42.

[0057] The through hole 41 is arranged at the middle part of the rotating shaft 22 and the platform plate 21, and the vacuum suction pipe 42 is arranged at one end of the through hole 41. The vacuum suction pipe 42 is connected with a gas compression device to perform negative pressure suction, so as to position the silicon wafer to be ground.

[0058] In addition, the silicon wafer to be ground can also be positioned on the platform plate 21 by means of wax adhesion, such as a wax layer arranged at the middle part of the surface of the platform plate 21 to bond and fix the silicon wafer to be ground.

[0059] In other embodiments, the platform plate 21 and the bottom plate 1 are further limited, so that the platform plate 21 will not be side-biased when the grinding head 33 contacts and grinds the silicon wafer to be ground, i.e. the stability of the rotation of the platform plate 21 is ensured to ensure the grinding effect during grinding.

[0060] A gap is reserved between the platform plate 21 and the base plate 1; a plurality of support balls 5 are provided in the gap to resist the squeezing force formed by the grinding head 33 pressing down on the platform plate 21, so as to ensure that the horizontal error of the platform plate 21 during the grinding process is between 0mm and 0.005mm.

[0061] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. A semiconductor grinding structure, characterized in that, Includes base plate, rotating platform, and grinding parts; The rotating platform is rotatably mounted on the base plate to support and carry the silicon wafer to be polished as it rotates, exposing the silicon wafer to the outside. The grinding element is movably mounted above the rotating platform, and the grinding element can contact or separate from the surface of the silicon wafer to be ground; The grinding element includes a displacement mechanism, which enables the grinding element to move in both the horizontal and vertical directions, thereby controlling the grinding element to gradually feed from the outer edge of the metal layer of the silicon wafer to be ground to the center of the metal layer of the silicon wafer to be ground. The rotating platform includes a platform plate, a rotating shaft, and a driving device; One end of the rotating shaft is connected to the driving device, and the other end extends through the outside of the base plate and is fixedly connected to the platform plate. The platform plate is equipped with an adsorption element to support the silicon wafer to be polished; The platform plate is configured as a disc-shaped structure, and the rotation axis is coaxial with the platform plate; The adsorption element includes a through hole and a vacuum adsorption tube; The through hole is located in the middle of the rotating shaft and the platform plate; The vacuum adsorption tube is located at one end of the through hole.

2. The semiconductor grinding structure as described in claim 1, characterized in that, The grinding component includes an output motor, a connecting rod, and a grinding head; The output motor is mounted on the displacement mechanism; One end of the connecting rod is connected to the output end of the output motor, and the other end is connected to the grinding head.

3. The semiconductor grinding structure as described in claim 2, characterized in that, The output motor is a high-precision, silent motor.

4. The semiconductor grinding structure as described in claim 1, characterized in that, The drive device is a coupled servo motor.

5. The semiconductor grinding structure as described in claim 1, characterized in that, A fixing ring is fixedly installed inside the base plate, and the rotating shaft is rotatably installed inside the fixing ring.

6. The semiconductor grinding structure as described in claim 1, characterized in that, A gap is reserved between the platform plate and the base plate; Multiple support balls are provided within the gap.

7. The semiconductor grinding structure as described in claim 1, characterized in that, The displacement mechanism is configured as an XY displacement platform.

8. A semiconductor grinding apparatus, characterized in that, It includes at least one semiconductor grinding structure as described in any one of claims 1-7.

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