A thermal field for heating wafer of film forming device

Abstract

The present invention discloses a thermal field for heating the wafer of a film-forming device, which relates to the technical field of semiconductor production equipment, and includes an air inlet chamber, a reaction chamber and a base; the reaction chamber is provided at the bottom of the air inlet chamber, and the air inlet chamber is connected to the reaction chamber; the base is located in the lower part of the reaction chamber, and the base is located directly below the air inlet chamber; the top of the base is used to support the wafer; a base thermal field is provided in the base, and the base thermal field is used to heat the wafer; an exhaust port is provided at the bottom of the reaction chamber. The thermal field for heating the wafer of the film-forming device in the present invention is placed inside the base to ensure the heating efficiency of the wafer and avoid the influence of the gas flow in the periphery. The heating surface of the thermal field inside the base faces the back of the wafer and is composed of a plurality of heating elements, which maximizes the heating surface and maintains the same heat generation at all locations within the surface.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor production equipment, and in particular to a thermal field for heating a wafer of a film forming device. Background Art

[0002] Vertical film deposition systems are widely used in the semiconductor industry, offering high throughput and excellent film quality when preparing wafers. During film deposition, the wafer, positioned at the bottom of a reaction chamber, rotates at high speed along a susceptor. Thermal fields inside and outside the susceptor heat the wafer to the reaction temperature, while a steady supply of feed gases is maintained throughout the deposition process.

[0003] The temperature uniformity of the wafer surface during thermal field heating is closely related to the film quality. Due to factors such as the exhaust gas flowing outward along the substrate after the gas contacts and reacts with the wafer, there is a difference in heat dissipation between the inner and outer circles of the wafer, which seriously affects the uniformity of the film thickness.

[0004] Therefore, how to improve temperature uniformity becomes the key to improving film thickness uniformity. Summary of the Invention

[0005] In order to solve the above technical problems, the present invention provides a film forming device wafer heating thermal field to improve the temperature uniformity in the thermal field, thereby improving the uniformity of film thickness.

[0006] To achieve the above object, the present invention provides the following solutions:

[0007] The present invention provides a thermal field for heating a chip of a film-forming device, comprising an air inlet chamber, a reaction chamber and a base; the reaction chamber is arranged at the bottom of the air inlet chamber, and the air inlet chamber is communicated with the reaction chamber; the base is located in the lower part of the reaction chamber, and the base is located directly below the air inlet chamber; the top of the base is used to support the chip; a base thermal field is arranged in the base, and the base thermal field is used to heat the chip; an exhaust port is provided at the bottom of the reaction chamber.

[0008] Optionally, a sleeve is provided on the upper portion of the reaction chamber, and a gas preheating thermal field is provided between the sleeve and the side wall of the reaction chamber.

[0009] Optionally, the base thermal field includes an outer ring heating element and a central heating element; the outer ring heating element and the central heating element are arranged at the same height, and the outer ring heating element is arranged around the central heating element.

[0010] Optionally, a heat preservation component is provided below the outer ring heating element and the central heating element.

[0011] Optionally, the base thermal field is connected to a quartz disc via a graphite electrode, the quartz disc is located at the bottom of the base, and the bottom of the graphite disc is connected to a quartz column.

[0012] Optionally, a substrate is provided above the outer ring heating element and the central heating element, and the substrate is used to load the chip.

[0013] Optionally, a support member is provided on the top surface of the substrate, and the support member is an annular structure. The top surface of the support member is laterally extended inward to form a supporting portion, and the chip is in contact with the top surface of the supporting portion.

[0014] Optionally, an adjusting member is provided on the top surface of the substrate, and the distance between the bottom surface of the supporting portion and the top surface of the substrate is the same as the distance between the top surface of the adjusting member and the bottom surface of the wafer.

[0015] Optionally, the bottom of the base is connected to a rotating shaft, and the rotating shaft is used to drive the base to rotate.

[0016] Optionally, a radiation thermometer is provided on the top of the air inlet chamber.

[0017] Compared with the prior art, the present invention has achieved the following technical effects:

[0018] The wafer heating thermal field of the film-forming apparatus of the present invention is located within the susceptor to ensure efficient wafer heating and avoid the influence of peripheral gas flow. The heating surface of the internal susceptor heat field faces the back of the wafer and is composed of multiple heating elements, maximizing the heating surface while maintaining uniform heat generation across the surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 This is a cross-sectional view of the internal structure of the reaction chamber of the vertical film forming equipment of the present invention;

[0021] Figure 2 This is a structural diagram of the internal thermal field and supporting components of the reaction chamber base of the present invention;

[0022] Figure 3 Schematic diagram of the gas flow trend and heat transfer direction of the thermal field on the surface of the susceptor wafer of the present invention;

[0023] Figure 4 This is a structural diagram of the chip of the present invention mounted on the surface of the substrate;

[0024] Figure 5 This is a structural diagram of the chip of the present invention being mounted on the surface of a substrate with an adjustment member installed.

[0025] Explanation of reference numerals: 1. inlet chamber; 2. reaction chamber; 3. gas preheating thermal field; 4. sleeve; 5. base; 6. base thermal field; 7. exhaust port; 8. rotating shaft; 9. exhaust pipe; 10. wafer; 11. substrate; 12. outer ring heating element; 13. central heating element; 14. heat insulation assembly; 15. graphite electrode; 16. quartz disc; 17. quartz column; 18. radiation thermometer; 19. support member; 20. adjustment member;

[0026] a. The distance between the hollow area of ​​the support member supporting the wafer and the upper surface of the substrate;

[0027] b. The distance between the lower surface of the chip and the upper surface of the substrate. DETAILED DESCRIPTION

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0029] like Figures 1 to 5 As shown, this embodiment provides a wafer heating thermal field for a film forming apparatus, comprising an inlet chamber 1, a reaction chamber 2, and a susceptor 5. The reaction chamber 2 is disposed at the bottom of the inlet chamber 1 and is in communication with the inlet chamber 1. The susceptor 5 is located in the lower portion of the reaction chamber 2 and directly below the inlet chamber 1. The top of the susceptor 5 is used to support a wafer 10. A susceptor thermal field 6 is disposed within the susceptor 5 and is used to heat the wafer 10. An exhaust port 7 is provided at the bottom of the reaction chamber 2. The exhaust port 7 is connected to an exhaust valve and a vacuum pump via an exhaust pipe 9, thereby allowing excess gas in the reaction chamber 2 to be smoothly discharged.

[0030] In this specific embodiment, a sleeve 4 is provided at the top of the reaction chamber 2, and a gas preheating field 3 is provided between the sleeve 4 and the sidewalls of the reaction chamber 2. More specifically, the upper portion of the sleeve 4 is a vertical structure with a smaller diameter, the middle portion gradually expands outward, and the lower portion is a vertical structure with a larger diameter. The raw material gas is transported from the gas source by a carrier gas, guided and rectified by the inlet chamber 1 to improve gas uniformity, and then steadily supplied downward. Epitaxial growth begins as the gas flows vertically downward and contacts the wafer 10 on the top of the susceptor 5. The gas then flows downward from around the susceptor 5 and is discharged through the exhaust port 7 at the bottom of the reaction chamber 2. The placement of the heat field inside the susceptor 5 ensures the efficient heating of the wafer 10 and avoids the influence of peripheral gas flow. The gas preheating field 3 is placed outside the gas flow channel below the inlet chamber 1. The sleeve 4 is heated and then transfers heat to the gas flowing inside. The gas preheating field 3 also plays a role in assisting the heating of the wafer 10. The gas preheating field 3 can specifically adopt multiple electric heating elements.

[0031] The base thermal field 6 includes an outer ring heating element 12 and a central heating element 13 ; the outer ring heating element 12 and the central heating element 13 are arranged at the same height, and the outer ring heating element 12 is arranged around the central heating element 13 .

[0032] The outer ring heating element 12 and the central heating element 13 are connected to a quartz disc 16 through graphite electrodes 15. The quartz disc 16 is located at the bottom of the base 5. The bottom of the graphite disc is connected to a quartz column 17. The quartz column 17 supports the graphite disc and has an internal channel for installing electrodes and communicating with an external power supply.

[0033] An insulation assembly 14 is provided below the outer ring heating element 12 and the central heating element 13. In this embodiment, the insulation assembly 14 includes four layers of insulation cotton distributed from top to bottom to reduce heat loss and shield the graphite electrode 15 to reduce the effect of heat conduction along the electrode on temperature uniformity.

[0034] A substrate 11 is provided above the outer ring heating element 12 and the central heating element 13 , and the substrate 11 is used for loading the wafer 10 .

[0035] In this specific embodiment, a support member 19 is provided on the top surface of the substrate 11. The support member 19 is an annular structure. The top surface of the support member 19 extends laterally inward to form a supporting portion, and the chip 10 contacts the top surface of the supporting portion.

[0036] In another embodiment, an adjustment member 20 is positioned on the top surface of substrate 11. The distance between the bottom surface of the support portion and the top surface of substrate 11 is the same as the distance between the top surface of adjustment member 20 and the bottom surface of wafer 10. In this embodiment, a represents the distance between the hollowed-out area of ​​the support member supporting the wafer and the top surface of the substrate; b represents the distance between the bottom surface of the wafer and the top surface of the substrate. By controlling the thickness of adjustment member 20 to equalize a and b, the dielectric composition of the inner and outer rings of wafer 10 is identical, improving temperature uniformity to a certain extent.

[0037] The bottom of the base 5 is connected to a rotating shaft 8 , and the rotating shaft 8 is used to drive the base 5 to rotate.

[0038] A plurality of radiation thermometers 18 are provided at the top of the air inlet chamber 1. The radiation thermometers 18 monitor the temperature of the inner and outer rings of the wafer 10 respectively, thereby facilitating the adjustment of the power of the outer ring heating element 12 and the central heating element 13 respectively, so as to reduce the temperature difference between the inner and outer rings of the wafer 10 caused by factors such as heat conduction and airflow.

[0039] It should be noted that it is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, from all perspectives, the embodiments should be regarded as illustrative and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the foregoing description. It is intended that all changes that fall within the meaning and range of equivalents of the claims be included in the present invention, and any reference signs in the claims should not be construed as limiting the claims to which they relate.

[0040] This specification uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the method and core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. A thermal field for heating a wafer of a film forming device, characterized in that: The invention comprises an air inlet chamber, a reaction chamber and a susceptor; the reaction chamber is provided at the bottom of the air inlet chamber, and the air inlet chamber is connected to the reaction chamber; the susceptor is located in the lower part of the reaction chamber and directly below the air inlet chamber; the top of the susceptor is used to support the wafer; a susceptor thermal field is provided in the susceptor, and the susceptor thermal field is used to heat the wafer; an exhaust port is provided at the bottom of the reaction chamber; A sleeve is provided at the upper portion of the reaction chamber, and a gas preheating heat field is provided between the sleeve and the side wall of the reaction chamber; the upper portion of the sleeve is a vertical structure with a smaller diameter, the middle portion gradually expands outward, and the lower portion is a vertical structure with a larger diameter; The base thermal field includes an outer ring heating element and a central heating element; A substrate is provided above the outer ring heating element and the central heating element, and the substrate is used for loading the wafer; The top surface of the substrate is provided with a support member, the support member is an annular structure, the top surface of the support member is laterally extended inward to form a supporting portion, and the wafer is in contact with the top surface of the supporting portion; An adjusting member is provided on the top surface of the substrate, and the distance between the bottom surface of the supporting portion and the top surface of the substrate is the same as the distance between the top surface of the adjusting member and the bottom surface of the wafer.

2. The thermal field for heating a wafer of a film forming device according to claim 1, wherein: The outer ring heating element is arranged at the same height as the central heating element, and the outer ring heating element is arranged around the central heating element.

3. The thermal field for heating a wafer of a film forming device according to claim 2, wherein: A heat preservation component is provided below the outer ring heating element and the central heating element.

4. The wafer heating thermal field of the film forming device according to claim 2, characterized in that: The base thermal field is connected to a quartz disc through a graphite electrode. The quartz disc is located at the bottom of the base. The bottom of the quartz disc is connected to a quartz column.

5. The wafer heating thermal field of the film forming device according to claim 1, characterized in that: The bottom of the base is connected to a rotating shaft, and the rotating shaft is used to drive the base to rotate.

6. The wafer heating thermal field of the film forming device according to claim 1, characterized in that: A radiation thermometer is provided on the top of the air inlet chamber.

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