Wafer support structure, wafer processing apparatus and processing method thereof

Abstract

This invention discloses a wafer support structure, a wafer processing apparatus, and a processing method thereof. The wafer support structure is disposed within the reaction chamber of a vapor deposition apparatus and includes: a metal pin passing through a pin through-hole in a wafer tray to support a wafer placed on the tray; wherein a gap is maintained between the pin through-hole and the metal pin, the width of which is determined based on the thermal expansion coefficient of the metal material of the pin; and a support plate disposed below the metal pin, which is raised when the wafer needs to be lifted, pushing the lower part of the metal pin upwards to lift the wafer. The aforementioned wafer support structure, wafer processing apparatus, and processing method not only eliminate the need for additional external weighting components, allowing for increased weight on the pin for rapid descent, but also reduce the size of the pin through-hole to improve the accuracy of repeated wafer placement and enhance the strength of the pin to increase its service life.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and specifically to a wafer support structure, a wafer processing apparatus, and a wafer processing method. Background Technology

[0002] Currently, in the existing atomic layer deposition (ALD) process, the wafer is transferred into the reaction chamber by a robot in the wafer transfer chamber. The wafer is first placed on a pin in the reaction chamber, and then the heating plate in the reaction chamber rises and the wafer falls onto the heating plate.

[0003] like Figure 1A , 1B As shown, Figure 1A , 1B A schematic diagram of the structure between the ejector pin and the bushing in the prior art is shown. In the prior art, ceramic is usually used as the material of the ejector pin, and a clearance fit is selected based on the coefficient of thermal expansion of the ceramic material to ensure smooth lifting and lowering of the ceramic ejector pin 100.

[0004] However, due to the low density of ceramic materials, the ceramic ejector pin 100 structure results in a relatively light weight. For ejector pin lifting that relies on gravity, the greater the mass, the faster the ejector pin falls back down. Therefore, in the prior art, a counterweight 111 is usually set at the lower part of the ceramic ejector pin 100 to increase its weight. This not only increases the number of equipment parts and raises the cost, but also increases the complexity of the equipment manufacturing process.

[0005] On the other hand, due to the limitations of the thermal expansion coefficient of ceramic materials, such as Figure 1A As shown, in order to ensure smooth lifting and lowering of the ceramic ejector pin 100 under high-temperature conditions, a larger tolerance fit is required, that is, a larger gap d1 between the outer bushings 110 of the ceramic ejector pin 100, to ensure that the ceramic ejector pin 100 can still lift and lower smoothly after thermal expansion. However, as Figure 1B As shown, a large gap d1 may cause the ceramic ejector pin 100 to tilt within the bushing 110 at room temperature. This not only affects the raising and lowering of the ceramic ejector pin 100 at room temperature but also affects the accuracy of wafer repositioning. Moreover, during thin film deposition, this large gap d1 can also cause deposited foreign matter to easily enter the bushing 110, resulting in uneven raising and lowering of the ceramic ejector pin 100, which in turn leads to the deviation of the deposited film layer, and in severe cases, wafer breakage and ejector pin breakage.

[0006] In order to solve the above-mentioned problems in the prior art, there is an urgent need in the art for an improved wafer support structure that can not only eliminate the need for additional external weighting parts to increase the weight of the ejector pin so as to make it fall quickly, but also reduce the size of the ejector pin through-hole to improve the accuracy of repeated placement of the wafer supported by the ejector pin, and enhance the strength of the ejector pin to increase its service life. Summary of the Invention

[0007] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0008] To address the aforementioned technical problems in the prior art, a first aspect of the present invention provides a wafer support structure disposed within the reaction chamber of a vapor deposition apparatus. The wafer support structure includes: a metal pin passing through a pin via disposed on a wafer tray to support a wafer placed on the wafer tray, wherein a gap is maintained between the pin via and the metal pin, the width of which is determined based on the thermal expansion coefficient of the metal material of the metal pin; and a support plate disposed below the metal pin, which is raised when the wafer needs to be lifted, pushing the lower part of the metal pin upward to lift the wafer. The wafer support structure provided by this invention not only eliminates the need for additional external weighting components, allowing for weighting of the pin for rapid descent, but also reduces the size of the pin via to improve the accuracy of repeated wafer placement and enhances the strength of the pin to increase its service life.

[0009] Optionally, in one embodiment, the vapor deposition apparatus includes a plasma vapor deposition apparatus, wherein the upper part of the metal pin and the contact portion with the wafer are provided with a ceramic support or covered with a ceramic coating.

[0010] Optionally, in one embodiment, the thermal expansion coefficient of the metal material is lower than that of the ceramic, and / or the density of the metal material is greater than that of the ceramic.

[0011] Optionally, further, the metallic material is selected from iron-nickel-cobalt type austenitic solid solution alloys.

[0012] Optionally, in one embodiment, the vapor deposition apparatus includes multiple reaction chambers, and the wafer support structure includes multiple sets of metal pins and multiple trays. The multiple reaction chambers correspond to different wafer pick-up and drop heights, and each set of metal pins and trays is respectively disposed in one of the reaction chambers to lift each wafer to the wafer pick-up and drop height required by the corresponding reaction chamber.

[0013] Optionally, the wafer support structure further includes multiple ejector pin pads, wherein each set of metal ejector pins has the same length, and each tray pushes the lower part of the corresponding metal ejector pin upward via the corresponding ejector pin pad to lift the corresponding wafer to the required wafer pick-up and drop height for the corresponding reaction chamber.

[0014] Alternatively, and further, each of the ejector pins of different heights has a different shape, and each of the trays is provided with a corresponding pin placement groove to support the ejector pins of the correct height.

[0015] A second aspect of the present invention provides a wafer processing apparatus, comprising: a reaction chamber having a wafer support structure as described in any of the preceding claims; and a wafer transfer chamber having a mechanical transfer device for placing a wafer to be processed into the reaction chamber via the mechanical transfer device and picking up a processed wafer from the reaction chamber via the mechanical transfer device. The wafer processing apparatus provided in another aspect of the present invention includes the wafer support structure provided in the preceding aspect, which not only eliminates the need for additional external weighting components, allowing for increased weight on the ejector pins to facilitate rapid descent, but also reduces the size of the ejector pin vias to improve the accuracy of repeated wafer placement supported by the ejector pins, and enhances the strength of the ejector pins to increase their service life.

[0016] Optionally, in one embodiment, the wafer processing apparatus includes a plurality of reaction chambers, wherein each reaction chamber is distributed around the wafer transfer chamber and has a different wafer pick-and-place height.

[0017] Furthermore, a third aspect of the present invention provides a wafer processing method, employing the wafer processing apparatus described in any of the preceding claims to process a wafer. The wafer processing method provided by another aspect of the present invention, by using the wafer processing apparatus provided in the preceding aspect, not only eliminates the need for additional external weighting components, but also increases the weight of the ejector pin to facilitate its rapid descent, and reduces the size of the ejector pin via to improve the accuracy of repeated wafer placement supported by the ejector pin, and enhances the strength of the ejector pin to increase its service life. Attached Figure Description

[0018] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0019] Figure 1A , 1B This diagram illustrates the structure between the ejector pin and the bushing in the prior art.

[0020] Figure 2A schematic diagram of the structure of a wafer processing apparatus provided according to some embodiments of the present invention is shown;

[0021] Figure 3 A schematic diagram of a wafer support structure provided according to some embodiments of the present invention is shown;

[0022] Figure 4A , 4B for Figure 3 A schematic diagram of the metal ejector pin in the wafer support structure shown;

[0023] Figure 5 for Figure 3 A schematic diagram of the structure between the metal ejector pins and bushings in the wafer support structure is shown; and

[0024] Figure 6 A schematic diagram of a wafer support structure provided according to other embodiments of the present invention is shown.

[0025] Figure label:

[0026] 100 Ceramic ejector pins;

[0027] 110 Bushing;

[0028] 111 Heavy Hammer;

[0029] 200 wafer processing units;

[0030] 210 First reaction chamber;

[0031] 211, 221 wafer trays;

[0032] 212, 222 Metal ejector pins;

[0033] 2120 bushing;

[0034] 2121 Ceramic coating;

[0035] 2122 Ceramic support section;

[0036] 2123 Ejector pin through hole;

[0037] 213, 223 Ejector pin pads;

[0038] 214, 224 pallets;

[0039] 220 Second reaction chamber;

[0040] 230 Third reaction chamber;

[0041] 240 Transmission Chamber;

[0042] 241 Mechanical conveying device;

[0043] 250 preload chamber;

[0044] 300 and 400 wafers;

[0045] The gap between d1 and d2. Detailed Implementation

[0046] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0047] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0048] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0049] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0050] As mentioned above, such as Figure 1A , 1B As shown, Figure 1A , 1BA schematic diagram of the structure between the ejector pin and the bushing in the prior art is shown. In the prior art, ceramic is usually used as the material of the ejector pin, and a clearance fit is selected based on the coefficient of thermal expansion of the ceramic material to ensure smooth lifting and lowering of the ceramic ejector pin 100.

[0051] However, due to the low density of ceramic materials, the ceramic ejector pin 100 structure results in a relatively light weight. For ejector pin lifting that relies on gravity, the greater the mass, the faster the ejector pin falls back down. Therefore, in the prior art, a counterweight 111 is usually set at the lower part of the ceramic ejector pin 100 to increase its weight. This not only increases the number of equipment parts and raises the cost, but also increases the complexity of the equipment manufacturing process.

[0052] On the other hand, due to the limitations of the thermal expansion coefficient of ceramic materials, such as Figure 1A As shown, in order to ensure smooth lifting and lowering of the ceramic ejector pin 100 under high-temperature conditions, a larger tolerance fit is required, that is, a larger gap d1 between the outer bushings 110 of the ceramic ejector pin 100, to ensure that the ceramic ejector pin 100 can still lift and lower smoothly after thermal expansion. However, as Figure 1B As shown, a large gap d1 may cause the ceramic ejector pin 100 to tilt within the bushing 110 at room temperature. This not only affects the raising and lowering of the ceramic ejector pin 100 at room temperature but also affects the accuracy of wafer repositioning. Moreover, during thin film deposition, this large gap d1 can also cause deposited foreign matter to easily enter the bushing 110, resulting in uneven raising and lowering of the ceramic ejector pin 100, which in turn leads to the deviation of the deposited film layer, and in severe cases, wafer breakage and ejector pin breakage.

[0053] To address the aforementioned problems in the prior art, the present invention provides a wafer support structure, a wafer processing apparatus, and a processing method thereof. These not only eliminate the need for additional external weighting components, allowing for the weight of the ejector pin to be increased for rapid descent, but also reduce the size of the ejector pin via to improve the accuracy of repeated wafer placement supported by the ejector pin, and enhance the strength of the ejector pin to increase its service life.

[0054] In some non-limiting embodiments, the wafer support structure provided in the first aspect of the present invention can be configured in the wafer processing apparatus provided in the second aspect of the present invention. The wafer processing method provided in another aspect of the present invention can also be implemented by the wafer processing apparatus provided in the second aspect of the present invention.

[0055] The working principle of the above-described wafer support structure will be described below with reference to some embodiments of wafer processing apparatus. Those skilled in the art will understand that these embodiments of wafer processing apparatus are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating methods or functions of the wafer support structure. Similarly, the wafer support structure is also only one non-limiting implementation provided by the present invention and does not constitute a limitation on all operating methods or functions of the wafer processing apparatus.

[0056] Please refer to the details. Figure 2 , Figure 2 A schematic diagram of the structure of a wafer processing apparatus provided according to some embodiments of the present invention is shown.

[0057] like Figure 2 As shown, in some embodiments of the present invention, the wafer processing apparatus 200 mainly includes a process module and a transform module 240. The transform module 240 is equipped with a mechanical transfer device 241, through which a wafer to be processed can be placed into the process module, and the processed wafer can be picked up from the process module via the mechanical transfer device 241.

[0058] Preferably, such as Figure 2 As shown, the wafer processing apparatus 200 may include multiple reaction chambers, such as a first reaction chamber 210, a second reaction chamber 220, and a third reaction chamber 230. Reaction chambers 210-230 can be reaction chambers of chemical vapor deposition (CVD) equipment, including thermal chemical vapor deposition (CVD) equipment. Chemical vapor deposition is a chemical technique used to produce high-purity, high-performance solid materials. The semiconductor industry uses this technique to grow thin films.

[0059] A typical CVD process involves exposing a wafer (substrate) to one or more different precursors, where a chemical reaction and / or chemical decomposition occurs on the substrate surface to produce the thin film to be deposited. Various byproducts are usually generated during the reaction, but most are carried away by the gas flow and do not remain in the reaction chamber.

[0060] Each reaction chamber 210, 220, and 230 can be distributed around the wafer transfer cavity 240, including horizontal distribution around the wafer transfer cavity 240 and vertical distribution around the wafer transfer cavity 240. Therefore, different reaction chambers 210, 220, and 230 can correspond to different wafer pick-and-place heights.

[0061] Optionally, the wafer processing apparatus 200 may also include a load lock 250. The load lock 250 is a preceding chamber to the transfer chamber 240, serving as a transition chamber for the wafer before it transitions from a non-vacuum state to a high-vacuum state. The wafer to be processed can be placed in the load lock 250 and transported to the transfer chamber 240. The load lock 250 maintains the cleanliness of the subsequent transfer chambers 240 and reaction chambers 210-230, improving the quality of wafer processing and shortening processing time.

[0062] Each reaction chamber 210-230 has a wafer support structure inside, which is used to receive the wafers to be processed from the mechanical transfer device 241 in the wafer transfer chamber 240.

[0063] See details Figure 3 , Figure 3 A schematic diagram of a wafer support structure provided according to some embodiments of the present invention is shown.

[0064] Taking the first reaction chamber 210 in the wafer processing apparatus 200 as an example, Figure 3 An embodiment of the wafer support structure within the first reaction chamber 210 is shown.

[0065] like Figure 3 As shown, a wafer support structure is disposed within the first reaction chamber 210 of the vapor deposition apparatus, mainly comprising a metal pin 212 and a tray 214. The metal pin 212 passes through a pin via 2123 disposed in the wafer tray 211 to support the wafer 300 placed on the wafer tray 211. Furthermore, a gap is maintained between the pin via 2123 in the wafer tray 211 and the metal pin 212. The width of this gap can be determined based on the thermal expansion coefficient of the metal material of the metal pin 212.

[0066] The support plate 214 is located below the metal ejector pin 212. When it is necessary to lift the wafer 300, it is lifted and the lower part of the metal ejector pin 212 is pushed upward to lift the wafer 300.

[0067] Specifically, the wafer 300 is transferred into the first reaction chamber 210 via a mechanical transfer device 241 within the wafer transfer chamber 240. It is first placed on a metal ejector pin 212 within the first reaction chamber 210, and then the wafer tray 211 within the first reaction chamber 210 rises to allow the wafer 300 to fall onto the wafer tray 211. The wafer tray 211 can be a heating plate.

[0068] In some optional embodiments, the vapor deposition equipment corresponding to the first reaction chamber 210 can be a plasma vapor deposition equipment, that is, a plasma-promoted chemical deposition equipment that uses plasma to promote the deposition chemical reaction, so that the vapor chemical deposition can form a high-quality solid film at a lower temperature, which is suitable for the deposition of various dielectric films such as SiO2 (SiH4, TEOS), SiNx, SiOxNy.

[0069] In this embodiment, preferably, the upper part of the metal pin 212 and the contact part with the wafer 300 can be provided with a ceramic support or covered with a ceramic coating to avoid the metal pin 212 from sparking during the gas phase chemical reaction in the plasma, thereby affecting the quality of the grown film.

[0070] Please refer to the details. Figure 4A , 4B , Figure 4A , 4B for Figure 3 The diagram shows the structure of the ejector pin in the wafer support structure.

[0071] like Figure 4A As shown, the upper surface of the metal ejector pin 212 is coated with ceramic coatings 2121 of different materials, such as alumina and silicon nitride, which enables the metal ejector pin 212 to be applied to thin film deposition chambers under different conditions.

[0072] Optionally, such as Figure 4B As shown, the metal ejector pin 212 can also be implemented using a combination of ceramic and metal. Specifically, the upper contact end of the metal ejector pin 212, which supports the wafer 300, is made of ceramic material, forming a ceramic support portion 2122, while the remaining part is made of metal material. Those skilled in the art will understand that the connection method between the upper ceramic support portion 2122 and the lower metal portion includes, but is not limited to, threaded connections, mechanical tenons and mortises, adhesive bonding, etc.

[0073] By depositing a ceramic coating 2121 on the surface of the metal pin 212 or by providing a ceramic support 2122 as described above, metal contamination can be avoided and a high-quality growth film can be generated.

[0074] Further, please see Figure 5 , Figure 5 for Figure 3 The diagram shows the structure between the ejector pin and the bushing of the wafer support structure.

[0075] like Figure 5As shown, a certain gap d2 is maintained between the ejector pin via 2123 in the wafer tray 211 and the metal ejector pin 212. Specifically, the metal ejector pin 212 is sleeved within the bushing 2120 in the wafer tray 211. The thermal expansion coefficient of the metal material of the metal ejector pin 212 is lower than that of the ceramic ejector pin 100 used in the prior art. Therefore, the gap d2 between the metal ejector pin 212 and the bushing 2120 in this embodiment can be significantly smaller than d2. Figure 1A , 1B The gap d1 between the ceramic ejector pin 100 and the bushing 110 in the prior art is shown.

[0076] Preferably, the metal ejector pin 212 can be made of an iron-nickel-cobalt austenitic solid solution alloy. For example, Super Invar 32-5 has an extremely low coefficient of thermal expansion (10⁻⁶). Its coefficient of thermal expansion is less than 1.2 at 180°C and less than 4 at 400°C. In contrast, the coefficient of thermal expansion of the ceramic ejector pin 100 is between 6.5 and 8. Under the same high-temperature conditions, the gap d₂ required for the metal ejector pin 212 made of Super Invar 32-5 can be reduced by 45% to 82% compared to the gap d₁ required for the ceramic ejector pin 100. As the gap between the ejector pin and the bushing decreases, tilting of the ejector pin within the bushing can be effectively avoided, thereby improving the accuracy of wafer repositioning. Moreover, during the thin film deposition process, the smaller gap d2 can also prevent foreign matter from easily entering the bushing 2120, reduce the risk of uneven lifting of the metal ejector pin 212, which could lead to the deviation of the deposited film layer, or even wafer breakage and ejector pin breakage.

[0077] Furthermore, in some preferred embodiments, the density of the metal material in the metal pin 212 of the wafer support structure is greater than that of the ceramic. For example, an iron-nickel-cobalt type austenitic solid solution alloy, such as Super Invar 32-5 metal, can be used as the material for the metal pin 212, with a density greater than 8.1 g / cm3. Under the same structure, compared with the ceramic pin 100, its mass is increased by more than 130%, and its tensile strength is also increased by 70%. Compared with the 130% mass increase of the metal pin 212, if the ceramic pin 100 wants to achieve the same mass, it needs to add additional external weighting components, such as counterweights. This makes the structure of the ceramic pin 100 more complex than that of the metal pin 212, and the added counterweight also increases the time and cost of maintaining the workpiece.

[0078] As described above, replacing the ceramic ejector pin 100 with a metal ejector pin 212 to support the wafer 300 not only improves the strength of the ejector pin and reduces the risk of breakage, thus extending its service life, but also eliminates the need for additional external weighting components to increase the weight of the ejector pin itself for faster descent, reducing the risk of pin jamming. More importantly, using a metal material with a low coefficient of thermal expansion reduces the gap between the ejector pin and the bushing, improving the accuracy of ejector pin placement.

[0079] Please continue to return Figure 2 ,like Figure 2 As shown, to improve wafer processing efficiency, a vapor deposition apparatus may include multiple reaction chambers, such as a first reaction chamber 210, a second reaction chamber 220, and a third reaction chamber 230. For multi-reaction chamber deposition, alternating dual robotic arms are typically used to pick up and place wafers. Therefore, in the prior art, multi-reaction chambers usually employ ejector pins of different heights to achieve wafer pick-up and drop at different heights. However, this introduces a risk: if ejector pins of different heights are placed in the wrong or mismatched reaction chamber, it can lead to wafer breakage and / or ejector pin breakage.

[0080] To further address the aforementioned technical issues, the wafer support structure may include multiple sets of metal ejectors and multiple trays. Multiple reaction chambers can correspond to different wafer pick-and-place heights, and each set of metal ejectors and trays can be separately disposed within a reaction chamber to lift each wafer to the required wafer pick-and-place height for its corresponding reaction chamber.

[0081] Please refer to the following for details. Figure 3 and Figure 6 For comparison, Figure 6 A schematic diagram of a wafer support structure provided according to other embodiments of the present invention is shown. Figure 6 The wafer support structure in the above Figure 3 The wafer support structures described in the illustrated embodiments are largely the same, and will not be repeated here.

[0082] like Figure 3 and Figure 6 As shown, assuming Figure 3 and Figure 6 These correspond to the first reaction chamber 210 and the second reaction chamber 220 in the wafer processing apparatus, respectively. In this embodiment, the wafer support structure also includes multiple ejector pin blocks 213 and 223, wherein each set of metal ejector pins 212 and 222 has the same length, and each support plate 214 and 224 pushes the lower part of the corresponding metal ejector pins 212 and 222 upward via the corresponding ejector pin blocks 213 and 223, so as to lift the corresponding wafers 300 and 400 to the corresponding reaction chambers, i.e., the wafer pick-up and drop height required for the first reaction chamber 210 and the second reaction chamber 220.

[0083] The heights of the ejector pads 213 and 223 below the metal ejector pins 212 and 222 in the first and second reaction chambers 210 and 220 can be different. For example, Figure 3 and Figure 6 As shown, the height of the ejector pad 213 below the metal ejector pin 212 in the first reaction chamber 210 is lower than that of the ejector pad 223 below the metal ejector pin 222 in the second reaction chamber 220. This satisfies the requirement that when the mechanical transfer device 241 delivers or retrieves wafers to multiple reaction chambers, such as the first reaction chamber 210 and the second reaction chamber 220, the wafers can be placed at different heights. This reduces the transport distance of the mechanical transfer device 241 from the wafer transfer chamber 240 to the first and second reaction chambers 210 and 220, further improving the wafer placement accuracy of the mechanical transfer device 241.

[0084] In other words, for multi-reaction-cavity structures, the height difference between ejector pins in different reaction cavities can be transferred to the ejector pin pads by adjusting the wafer support structure. This maintains the same height for ejector pins in different reaction cavities, preventing operator error from misplacing ejector pins with the wrong reaction cavities, which could lead to pin breakage or wafer fragmentation. It also reduces the variety of ejector pins required, saving costs.

[0085] In some preferred embodiments, in order to prevent the ejector pads 213 and 223 corresponding to the first reaction chamber 210 and the second reaction chamber 220 from being placed incorrectly in different reaction chambers, the ejector pads 213 and 223 can be designed with different shapes, such as triangles, circles, squares, etc., according to the different heights required by the wafer. And each support plate 214 and 224 is provided with a pad placement groove of the corresponding shape to support the ejector pads 213 and 223 with the correct height.

[0086] The above describes the structure and working principle of the wafer support structure and wafer processing apparatus provided by one aspect of the present invention. The wafer processing method provided by another aspect of the present invention can use the wafer processing apparatus described in the above aspect to process the wafer, as has been explained in the above description of the structure of the wafer support structure and wafer processing apparatus, and will not be repeated here.

[0087] In summary, the present invention provides a wafer support structure, a wafer processing apparatus and processing method thereof, which not only eliminates the need for additional external weighting parts, but also increases the weight of the ejector pin to enable it to fall quickly, reduces the size of the ejector pin through-hole to improve the accuracy of repeated placement of the wafer supported by the ejector pin, and enhances the strength of the ejector pin to increase its service life.

[0088] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0089] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer support structure disposed within the reaction chamber of a vapor deposition apparatus, characterized in that, include: A metal ejector pin passes through a ejector pin via a wafer tray to support a wafer placed on the wafer tray. The metal ejector pin is fitted inside a bushing in the wafer tray, and a gap is maintained between the bushing and the metal ejector pin. The width of the gap is determined based on the thermal expansion coefficient of the metal material of the metal ejector pin. The thermal expansion coefficient of the metal material is lower than that of ceramic, so that the gap between the metal ejector pin and the bushing is smaller than the gap between the ceramic ejector pin and the bushing. as well as A support plate is positioned below the metal ejector pin. When it is necessary to lift the wafer, it is raised to push the lower part of the metal ejector pin upwards to lift the wafer.

2. The wafer support structure as described in claim 1, characterized in that, The vapor deposition equipment includes a plasma vapor deposition equipment, and the upper part of the metal pin in contact with the wafer is provided with a ceramic support or covered with a ceramic coating.

3. The wafer support structure as described in claim 1, characterized in that, The density of the metallic material is greater than that of the ceramic.

4. The wafer support structure as described in claim 3, characterized in that, The metallic material is selected from iron-nickel-cobalt type austenitic solid solution alloys.

5. The wafer support structure as described in claim 1, characterized in that, The vapor deposition apparatus includes multiple reaction chambers, and the wafer support structure includes multiple sets of metal pins and multiple trays. The multiple reaction chambers correspond to different wafer pick-up and drop heights. Each set of metal pins and trays is respectively disposed in one of the reaction chambers to lift each wafer to the required wafer pick-up and drop height of the corresponding reaction chamber.

6. The wafer support structure as described in claim 5, characterized in that, It also includes multiple ejector pads, wherein each group of metal ejectors has the same length, and each tray pushes the lower part of the corresponding metal ejector upward via the corresponding ejector pad to lift the corresponding wafer to the required wafer pick-up and drop height for the corresponding reaction chamber.

7. The wafer support structure as described in claim 6, characterized in that, The ejector pins of different heights have different shapes, and each of the trays is provided with a corresponding pin placement groove to support the ejector pins of the correct height.

8. A wafer processing apparatus, characterized in that, include: The reaction chamber is provided with a wafer support structure as described in any one of claims 1 to 7; as well as The wafer transfer chamber is equipped with a mechanical transfer device, which is used to place the wafer to be processed into the reaction chamber via the mechanical transfer device, and to pick up the processed wafer from the reaction chamber via the mechanical transfer device.

9. The wafer processing apparatus as described in claim 8, characterized in that, It includes multiple reaction chambers, wherein each reaction chamber is distributed around the wafer transfer chamber and has a different wafer pick-and-place height.

10. A wafer fabrication method, characterized in that, The wafer is processed using the wafer processing apparatus as described in claim 8 or 9.

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