An inverse-conducting IGBT device and manufacturing method

Abstract

The present invention provides a reverse-conducting IGBT device and a manufacturing method, belonging to the technical field of semiconductor devices. The reverse-conducting IGBT device includes a back metal electrode, a P+ collector region, a conductive doping region, an n-type field stop layer, an n-drift region, a p-type base region, a first dielectric layer, a second dielectric layer, a collector electrode, and an emitter electrode, which are sequentially arranged from bottom to top; wherein, a diffusion runway is provided in the conductive doping region, a dispersion runway is provided in the n-type field stop layer, the dispersion runway is in contact with the n-drift region through a plurality of drainage holes, and both sides of the dispersion runway are in contact with the diffusion runway through a shunt channel. The diffusion runway introduces electrons into the dispersion runway through the shunt channel and forms dispersion in the dispersion runway. Then, through the contact action of the drainage holes with the n-drift region, the electrons can be injected into the n-drift region at a faster speed. Furthermore, the arrangement of a plurality of drainage holes can eliminate the voltage foldback phenomenon.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and more particularly, relates to a reverse conducting IGBT device and a manufacturing method thereof. Background Art

[0002] The performance of traditional silicon-based semiconductor devices has gradually approached the physical limit of the material. Devices made of the third-generation semiconductor material represented by silicon carbide (SiC) have excellent operating capabilities such as high frequency, high voltage, high temperature resistance, and radiation resistance, and can achieve higher power density and higher efficiency, showing broad application prospects in the fields of high-power, high-temperature, and high-frequency power electronics.

[0003] A reverse conducting insulated gate bipolar transistor (RC-IGBT) is a device that integrates an IGBT and a reverse-parallel diode on one chip. The reverse conducting insulated gate bipolar transistor (RC-IGBT) can improve the integration level, reduce the parasitic inductance, and lower the packaging cost.

[0004] However, currently, due to the existence of a junction barrier in the PN junction of the reverse conducting insulated gate bipolar transistor, holes are difficult to be injected rapidly, resulting in a voltage fold-back phenomenon during forward conduction, and the generated high temperature is extremely likely to burn out the reverse conducting insulated gate bipolar transistor. Summary of the Invention

[0005] Embodiments of the present invention provide a reverse conducting IGBT device and a manufacturing method thereof, aiming to solve the problem that in the existing reverse conducting insulated gate bipolar transistor, due to the existence of a junction barrier in the PN junction, holes are difficult to be injected rapidly, resulting in a voltage fold-back phenomenon during forward conduction, and the generated high temperature is extremely likely to burn out the reverse conducting insulated gate bipolar transistor.

[0006] In view of the above problems, the technical solution proposed by the present invention is as follows:

[0007] In a first aspect, the present invention provides a reverse-conducting IGBT device, which includes a back metal electrode, a P+ collector region, a conductive doping region, an n-type field stop layer, an n- drift region, a p-type base region, a first dielectric layer, a second dielectric layer, a collector electrode, and an emitter electrode, which are sequentially arranged from bottom to top. Opposite gate electrode regions are provided in the p-type base region and the n- drift region. A first insulating film is provided on the surface of the gate electrode region. A P+ region and an N+ emitter region are respectively provided on one side of each first insulating film. Insulating layers are provided on both sides of the first dielectric layer and the second dielectric layer. Among them, a diffusion track is provided in the conductive doping region, a dispersion track is provided in the n-type field stop layer, the dispersion track is in contact with the n- drift region through a plurality of drainage holes, and both sides of the dispersion track are in contact with the diffusion track through a shunt channel.

[0008] As a preferred technical solution of the present invention, the doping material of the diffusion track is one of silicon, germanium, or gallium arsenide.

[0009] As a preferred technical solution of the present invention, the doping concentration range of the diffusion track is 2.0×10 15 cm -3 ~2.0×10 17 cm -3 。

[0010] As a preferred technical solution of the present invention, the thickness range of the diffusion track is 3μm to 5μm.

[0011] As a preferred technical solution of the present invention, the doping material of the dispersion track is one of copper alloy or aluminum alloy.

[0012] As a preferred technical solution of the present invention, the doping concentration range of the dispersion track is 2.0×10 14 cm -3 ~2.0×10 16 cm -3 。

[0013] As a preferred technical solution of the present invention, the thickness range of the dispersion track is 2.5μm to 4.5μm.

[0014] As a preferred technical solution of the present invention, the collector electrode includes a traction end, the traction end passes through the insulating layer, the P+ region, and the N+ emitter region and extends into the p-type base region, and an insulating ring is provided on the surface of the traction end located in the p-type base region.

[0015] As a preferred technical solution of the present invention, the doping concentration range of the insulating ring is 1.0×10 12 cm -3 ~1.0×1014 cm -3 。

[0016] In a second aspect, the present invention provides a method for manufacturing a reverse-conducting IGBT device, comprising the following steps:

[0017] S1. Provide a silicon material substrate, sequentially fabricate a P+ collector region and a conductive doping region on the substrate by chemical vapor deposition, and etch a first window on the conductive doping region by grinding, chemical mechanical polishing and plasma etching methods;

[0018] S2. Fabricate a diffusion track in the first window by high-temperature ion implantation combined with high-temperature annealing method, and fabricate an n-type field stop layer on the conductive doping region and the diffusion track by chemical vapor deposition;

[0019] S3. Etch a second window on the n-type field stop layer by grinding, chemical mechanical polishing and plasma etching methods, fabricate a dispersion track in the second window by high-temperature ion implantation combined with high-temperature annealing method, simultaneously etch a plurality of first trenches on the dispersion track by grinding, chemical mechanical polishing and plasma etching methods, etch second trenches on both sides of the dispersion track by grinding, chemical mechanical polishing and plasma etching methods, and perfect the n-type field stop layer in the first trenches and the second trenches by chemical vapor deposition;

[0020] S4. Sequentially fabricate an n- drift region, a p-type base region, a P+ region and an N+ emitter region on the n-type field stop layer and the dispersion track by chemical vapor deposition;

[0021] S5. Etch a third trench on the p-type base region and the n- drift region by grinding, chemical mechanical polishing and plasma etching methods;

[0022] S6. Fabricate a first insulating film in the third trench by high-temperature ion implantation combined with high-temperature annealing method, and fabricate a gate electrode region by chemical vapor deposition;

[0023] S7. Sequentially fabricate a first dielectric layer and a second dielectric layer on the p-type base region, the gate electrode region, the first insulating film and the N+ emitter region by chemical vapor deposition, and fabricate an insulating layer on the P+ region and the N+ emitter region by chemical vapor deposition;

[0024] S8. Etch a fourth trench on the insulating layer, the P+ region, the N+ emitter region and the p-type base region by grinding, chemical mechanical polishing and plasma etching methods;

[0025] S9. Fabricate an insulating ring in the fourth trench by high-temperature ion implantation combined with high-temperature annealing method, fabricate a traction end in the fourth trench by chemical vapor deposition, and fabricate a collector electrode on the second dielectric layer and the insulating layer by chemical vapor deposition;

[0026] S10. Form an emitter electrode on the collector electrode by metal sputtering or gold evaporation, and form a back metal electrode on the lower surface of the substrate by metal sputtering or gold evaporation.

[0027] Compared with the prior art, the beneficial effects of the present invention are as follows: When the IGBT device is turned on, the P+ collector region enables the conductive doping region to form a strong current flow. At this time, the diffusion runway introduces electrons into the dispersion runway through the shunt channel, and forms a dispersion in the dispersion runway. Then, through the contact action of the drainage holes with the n- drift region, the electrons can be injected into the n- drift region at a faster speed. Furthermore, the arrangement of several drainage holes can eliminate the voltage fold-back phenomenon. When a reverse voltage is applied between the gate electrode region and the emitter electrode or no signal is applied, the channel in the IGBT device disappears, and carriers still remain in the n- drift region. The carriers are dispersed in the dispersion runway through several drainage holes and introduced into the diffusion runway through the shunt channel, causing the diffusion runway to diffuse, thereby gradually reducing the voltage drop and effectively improving the blocking ability, which is beneficial for the IGBT device to turn off quickly.

[0028] The above description is only an overview of the technical solution of the present invention. In order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the content of the specification. And in order to make the above and other objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention are specifically described below. Description of the Drawings

[0029] Figure 1 It is a schematic structural diagram of a reverse-conducting IGBT device disclosed by the present invention;

[0030] Figure 2 It is a flowchart of a manufacturing method of a reverse-conducting IGBT device disclosed by the present invention;

[0031] Figures 3a to 3j It is a schematic diagram of the steps of a manufacturing method of a reverse-conducting IGBT device disclosed by the present invention.

[0032] Description of the reference numerals: 1. Back metal electrode; 2. P+ collector region; 3. Conductive doping region; 31. Diffusion runway; 311. First window; 4. n-type field stop layer; 41. Dispersion runway; 411. Second window; 412. First trench; 413. Second trench; 42. Drainage hole; 43. Shunt channel; 5. n- drift region; 6. Gate electrode region; 7. First insulating film; 71. Third trench; 8. p-type base region; 9. P+ region; 10. N+ emitter region; 11. Insulating layer; 12. First dielectric layer; 13. Second dielectric layer; 14. Collector electrode; 141. Traction end; 142. Insulating ring; 143. Fourth trench; 15. Emitter electrode. Detailed Description of the Embodiments

[0033] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are only a part rather than all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0034] Therefore, the detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0035] It should be noted that like reference numerals and letters denote like items in the following drawings. Therefore, once an item is defined in one drawing, it does not require further definition and explanation in subsequent drawings.

[0036] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.

[0037] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0038] Embodiment 1

[0039] Refer to the attached Figure 1As shown in the figure, the present invention provides a technical solution: an inverse-conducting IGBT device, including a back metal electrode 1, a P+ collector region 2, a conductive doping region 3, an n-type field stop layer 4, an n- drift region 5, a p-type base region 8, a first dielectric layer 12, a second dielectric layer 13, a collector electrode 14, and an emitter electrode 15, which are sequentially arranged from bottom to top. A relative gate electrode region 6 is provided in the p-type base region 8 and the n- drift region 5. A first insulating film 7 is provided on the surface of the gate electrode region 6. A P+ region 9 and an N+ emitter region 10 are respectively provided on one side of each first insulating film 7. Insulating layers 11 are provided on both sides of the first dielectric layer 12 and the second dielectric layer 13; wherein, a diffusion track 31 is provided in the conductive doping region 3, a dispersion track 41 is provided in the n-type field stop layer 4, the dispersion track 41 is in contact with the n- drift region 5 through a plurality of drainage holes 42, and both sides of the dispersion track 41 are in contact with the diffusion track 31 through a shunt channel 43.

[0040] According to this embodiment, when the IGBT device is turned on, the P+ collector region 2 enables the conductive doping region 3 to form a strong current flow. At this time, the diffusion track 31 introduces electrons into the dispersion track 41 through the shunt channel 43, and forms a dispersion in the dispersion track 41. Then, through the contact action of the drainage holes 42 with the n- drift region 5, the electrons can be injected into the n- drift region 5 at a faster speed. Furthermore, the setting of a plurality of drainage holes 42 can eliminate the voltage fold-back phenomenon. When a reverse voltage is applied or no signal is applied between the gate electrode region 6 and the emitter electrode 15, the channel in the IGBT device disappears, and the n- drift region 5 still has residual carriers. The carriers are dispersed in the dispersion track 41 through a plurality of drainage holes 42 and introduced into the diffusion track 31 through the shunt channel 43, so that the diffusion track 31 diffuses, thereby gradually reducing the voltage drop and effectively improving the blocking ability, which is beneficial to the rapid turn-off of the IGBT device.

[0041] Optionally, the doping material of the diffusion track 31 is one of silicon, germanium, or gallium arsenide.

[0042] Preferably, the doping concentration of the diffusion track 31 is 2.0×10 15 cm -3 。

[0043] Preferably, the thickness of the diffusion track 31 is 3 μm.

[0044] Optionally, the doping material of the dispersion track 41 is one of copper alloy or aluminum alloy.

[0045] Preferably, the doping concentration of the dispersion track 41 is 2.0×10 14 cm -3 。

[0046] Preferably, the thickness of the dispersion runway 41 is 2.5 μm.

[0047] In a preferred embodiment of the present invention, the collector electrode 14 includes a traction end 141 that extends through the insulating layer 11, the P+ region 9, and the N+ emitter region 10 into the p-type base region 8, and an insulating ring 142 is provided on the surface of the traction end 141 located in the p-type base region 8.

[0048] According to this embodiment, the insulating ring 142 reduces the current flow in the gate electrode region 6 and the emitter electrode 15, thereby improving the control ability of the IGBT device and avoiding reverse breakdown.

[0049] Preferably, the doping concentration of the insulating ring 142 is 1.0×10 12 cm -3 .

[0050] Embodiment 2

[0051] Referring to the attached Figure 1 As shown, the present invention provides a technical solution: a reverse-conducting IGBT device, including a back metal electrode 1, a P+ collector region 2, a conductive doping region 3, an n-type field stop layer 4, an n- drift region 5, a p-type base region 8, a first dielectric layer 12, a second dielectric layer 13, a collector electrode 14, and an emitter electrode 15 arranged in sequence from bottom to top. The p-type base region 8 and the n- drift region 5 are provided with opposite gate electrode regions 6, and a first insulating film 7 is provided on the surface of the gate electrode region 6. A P+ region 9 and an N+ emitter region 10 are respectively provided on one side of each first insulating film 7, and insulating layers 11 are provided on both sides of the first dielectric layer 12 and the second dielectric layer 13; wherein, a diffusion runway 31 is provided in the conductive doping region 3, a dispersion runway 41 is provided in the n-type field stop layer 4, the dispersion runway 41 is in contact with the n- drift region 5 through a plurality of drainage holes 42, and both sides of the dispersion runway 41 are in contact with the diffusion runway 31 through shunt channels 43.

[0052] Optionally, the doping material of the diffusion runway 31 is one of silicon, germanium, or gallium arsenide.

[0053] Preferably, the doping concentration of the diffusion runway 31 is 2.0×10 16 cm -3 .

[0054] Preferably, the thickness of the diffusion runway 31 is 4 μm.

[0055] Optionally, the doping material of the dispersion runway 41 is one of copper alloy or aluminum alloy.

[0056] Preferably, the doping concentration range of the dispersion runway 41 is 2.0×10 15 cm -3 。

[0057] Preferably, the thickness of the dispersion runway 41 is 3.5 μm.

[0058] In a preferred embodiment of the present invention, the collector electrode 14 includes a traction end 141, and the traction end 141 passes through the insulating layer 11, the P+ region 9, and the N+ emitter region 10 and extends into the p-type base region 8, and an insulating ring 142 is provided on the surface of the traction end 141 located in the p-type base region 8.

[0059] Preferably, the doping concentration of the insulating ring 142 is 1.0×10 13 cm -3 。

[0060] Embodiment III

[0061] Referring to the attached Figure 1 As shown, the present invention provides a technical solution: a reverse-conducting IGBT device, including a back metal electrode 1, a P+ collector region 2, a conductive doping region 3, an n-type field stop layer 4, an n-drift region 5, a p-type base region 8, a first dielectric layer 12, a second dielectric layer 13, a collector electrode 14, and an emitter electrode 15 arranged in sequence from bottom to top. Opposite gate electrode regions 6 are provided in the p-type base region 8 and the n-drift region 5, a first insulating film 7 is provided on the surface of the gate electrode region 6, and a P+ region 9 and an N+ emitter region 10 are respectively provided on one side of each first insulating film 7. Insulating layers 11 are provided on both sides of the first dielectric layer 12 and the second dielectric layer 13; wherein, a diffusion runway 31 is provided in the conductive doping region 3, a dispersion runway 41 is provided in the n-type field stop layer 4, the dispersion runway 41 is in contact with the n-drift region 5 through a plurality of drainage holes 42, and both sides of the dispersion runway 41 are in contact with the diffusion runway 31 through a shunt channel 43.

[0062] Optionally, the doping material of the diffusion runway 31 is one of silicon, germanium, or gallium arsenide.

[0063] Preferably, the doping concentration of the diffusion runway 31 is 2.0×10 17 cm -3 。

[0064] Preferably, the thickness of the diffusion runway 31 is 5 μm.

[0065] Optionally, the doping material of the dispersion runway 41 is one of copper alloy or aluminum alloy.

[0066] Preferably, the doping concentration of the dispersion runway 41 is 2.0×1016 cm -3 。

[0067] Preferably, the thickness of the dispersion track 41 is 4.5 μm.

[0068] In a preferred embodiment of the present invention, the collector electrode 14 includes a traction end 141, the traction end 141 passes through the insulating layer 11, the P+ region 9 and the N+ emitter region 10 and extends into the p-type base region 8, and an insulating ring 142 is provided on the surface of the traction end 141 located in the p-type base region 8.

[0069] Preferably, the doping concentration of the insulating ring 142 is 1.0×10 14 cm -3 。

[0070] Referring to the attached Figures 2 to 3j As shown, another manufacturing method of a reverse-conducting IGBT device provided by an embodiment of the present invention is applied to the above-mentioned Embodiments 1 to 3, and includes the following steps:

[0071] S1. Provide a silicon material substrate, and sequentially fabricate a P+ collector region 2 and a conductive doping region 3 on the substrate by chemical vapor deposition, and etch a first window 311 on the conductive doping region 3 by grinding, chemical mechanical polishing and plasma etching;

[0072] S2. Fabricate a diffusion track 31 in the first window 311 by high-temperature ion implantation combined with high-temperature annealing, and fabricate an n-type field stop layer 4 on the conductive doping region 3 and the diffusion track 31 by chemical vapor deposition;

[0073] S3. Etch a second window 411 on the n-type field stop layer 4 by grinding, chemical mechanical polishing and plasma etching, fabricate a dispersion track 41 in the second window 411 by high-temperature ion implantation combined with high-temperature annealing, and at the same time, etch a plurality of first grooves 412 on the dispersion track 41 by grinding, chemical mechanical polishing and plasma etching, etch second grooves 413 on both sides of the dispersion track 41 by grinding, chemical mechanical polishing and plasma etching, and perfect the n-type field stop layer 4 in the first grooves 412 and the second grooves 413 by chemical vapor deposition;

[0074] S4. Sequentially fabricate an n-drift region 5, a p-type base region 8, a P+ region 9 and an N+ emitter region 10 on the n-type field stop layer 4 and the dispersion track 41 by chemical vapor deposition;

[0075] S5. Etch a third groove 71 in the p-type base region 8 and the n-drift region 5 by grinding, chemical mechanical polishing and plasma etching;

[0076] S6. In the third groove 71, a first insulating film 7 is fabricated by high-temperature ion implantation combined with high-temperature annealing, and a gate electrode region 6 is fabricated by chemical vapor deposition;

[0077] S7. On the p-type base region 8, gate electrode region 6, first insulating film 7, and N+ emitter region 10, a first dielectric layer 12 and a second dielectric layer 13 are sequentially fabricated by chemical vapor deposition, and an insulating layer 11 is fabricated by chemical vapor deposition on the P+ region 9 and N+ emitter region 10;

[0078] S8. A fourth groove 143 is etched out on the insulating layer 11, P+ region 9, N+ emitter region 10, and p-type base region 8 by grinding, chemical mechanical polishing, and plasma etching;

[0079] S9. An insulating ring 142 is fabricated in the fourth groove 143 by high-temperature ion implantation combined with high-temperature annealing, a traction end 141 is fabricated in the fourth groove 143 by chemical vapor deposition, and a collector electrode 14 is fabricated by chemical vapor deposition on the second dielectric layer 13 and insulating layer 11;

[0080] S10. An emitter electrode 15 is formed on the collector electrode 14 by metal sputtering or gold evaporation, and a back metal electrode 1 is formed on the lower surface of the substrate by metal sputtering or gold evaporation.

[0081] The above is only the preferred embodiment of the present invention and is not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An inverse-conducting IGBT device, characterized in that, It includes a back metal electrode, a P+ collector region, a conductive doping region, an n-type field stop layer, an n-drift region, a p-type base region, a first dielectric layer, a second dielectric layer, a collector electrode, and an emitter electrode, which are sequentially arranged from bottom to top. Opposite gate electrode regions are provided in the p-type base region and the n-drift region. A first insulating film is provided on the surface of the gate electrode region. A P+ region and an N+ emitter region are respectively provided on one side of each first insulating film. Insulating layers are provided on both sides of the first dielectric layer and the second dielectric layer. Among them, a diffusion track is provided in the conductive doping region, a dispersion track is provided in the n-type field stop layer, the dispersion track is in contact with the n-drift region through a plurality of drainage holes, and both sides of the dispersion track are in contact with the diffusion track through shunt channels.

2. The inverse-conducting IGBT device according to claim 1, wherein The doping material of the diffusion track is one of silicon, germanium, or gallium arsenide.

3. The inverse-conducting IGBT device according to claim 1 or 2, characterized in that, The doping concentration range of the diffusion runway is 2.0×10 15 cm -3 ~2.0×10 17 cm -3 。 4. An inverse-conducting IGBT device according to claim 3, characterized in that, The thickness range of the diffusion track is 3μm to 5μm.

5. The reverse-conducting IGBT device according to claim 1, characterized in that, The doping material of the dispersion track is one of copper alloy or aluminum alloy.

6. The inverse-conducting IGBT device according to claim 1 or 5, characterized in that, The doping concentration range of the dispersion runway is 2.0×10 14 cm -3 ~2.0×10 16 cm -3 .

7. An inverse-conducting IGBT device according to claim 6, characterized in that, The thickness range of the dispersion track is 2.5μm to 4.5μm.

8. An inverse-conducting IGBT device according to claim 1, characterized in that, The collector electrode includes a traction end, the traction end passes through the insulating layer, the P+ region, and the N+ emitter region and extends into the p-type base region, and an insulating ring is provided on the surface of the traction end located in the p-type base region.

9. The reverse-conducting IGBT device according to claim 8, characterized in that, The doping concentration range of the insulating ring is 1.0×10 12 cm -3 ~1.0×10 14 cm -3 .

10. A manufacturing method of a reverse-conducting IGBT device, applied to a reverse-conducting IGBT device according to any one of claims 1 to 9, characterized in that, It includes the following steps: S1, Provide a silicon material substrate, sequentially fabricate a P+ collector region and a conductive doping region on the substrate by chemical vapor deposition method, and etch a first window on the conductive doping region by grinding, chemical mechanical polishing, and plasma etching methods. S2, Fabricate a diffusion track in the first window by high-temperature ion implantation combined with high-temperature annealing method, and fabricate an n-type field stop layer on the conductive doping region and the diffusion track by chemical vapor deposition method. S3, Etch a second window on the n-type field stop layer by grinding, chemical mechanical polishing, and plasma etching methods, fabricate a dispersion track in the second window by high-temperature ion implantation combined with high-temperature annealing method, at the same time, etch a plurality of first grooves on the dispersion track by grinding, chemical mechanical polishing, and plasma etching methods, etch second grooves on both sides of the dispersion track by grinding, chemical mechanical polishing, and plasma etching methods, and perfect the n-type field stop layer in the first grooves and the second grooves by chemical vapor deposition method. S4, Sequentially fabricate an n-drift region, a p-type base region, a P+ region, and an N+ emitter region on the n-type field stop layer and the dispersion track by chemical vapor deposition method. S5, Etch a third groove in the p-type base region and the n-drift region by grinding, chemical mechanical polishing, and plasma etching methods. S6, Fabricate a first insulating film in the third groove by high-temperature ion implantation combined with high-temperature annealing method, and fabricate a gate electrode region by chemical vapor deposition method. S7, Sequentially fabricate a first dielectric layer and a second dielectric layer on the p-type base region, the gate electrode region, the first insulating film, and the N+ emitter region by chemical vapor deposition method, and fabricate an insulating layer on the P+ region and the N+ emitter region by chemical vapor deposition method. S8, a fourth trench is etched in the insulating layer, P+ region, N+ emitter region, and p-type base region by grinding, chemical mechanical polishing, and plasma etching methods; S9, an insulating ring is fabricated in the fourth trench by high-temperature ion implantation combined with high-temperature annealing, a traction end is fabricated in the fourth trench by chemical vapor deposition, and a collector electrode is fabricated on the second dielectric layer and the insulating layer by chemical vapor deposition; S10, an emitter electrode is formed on the collector electrode by metal sputtering or gold evaporation, and a back metal electrode is formed on the lower surface of the substrate by metal sputtering or gold evaporation.

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