An ALD apparatus simulation method, device and system

Abstract

The application discloses an ALD equipment simulation method, device and system, and relates to the technical field of vapor deposition. The ALD equipment simulation method comprises the following steps: establishing an initial simulation model based on an ALD equipment; performing film plating simulation on the initial simulation model according to set combination parameters to obtain a streamline diagram of a gas flow rate, wherein the combination parameters comprise an input flow rate of the gas; calculating a gas flow rate of a film plating area in the initial simulation model according to the streamline diagram to obtain a first flow rate, wherein the film plating area represents an area where a wafer tray model is placed in the initial simulation model; calculating a flow rate ratio of the first flow rate and the input flow rate to obtain a flow rate ratio; and adjusting the initial simulation model according to the flow rate ratio until the flow rate ratio reaches a preset target threshold value, and then stopping to obtain a target simulation model. The ALD equipment simulation method provided by the application can optimize the structure of the ALD equipment and improve the film plating effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to an ALD device simulation method, device and system. BACKGROUND

[0002] The ALD device is an atomic layer deposition coating device, which is used for atomic layer deposition of a wafer to coat the wafer surface with atomic form one layer after another.

[0003] At present, the ALD devices on the market usually have unreasonable structure design, so that the gas input into the reaction cavity of the ALD device cannot fully reach the wafer tray, resulting in poor coating effect.

[0004] Therefore, an ALD device simulation method capable of optimizing the structure of the ALD device is urgently needed to improve the coating effect of the ALD device. SUMMARY

[0005] The present application aims to provide an ALD device simulation method capable of optimizing the structure of the ALD device and improving the coating effect of the ALD device.

[0006] Another object of the present application is to provide an ALD device simulation device capable of optimizing the structure of the ALD device and improving the coating effect of the ALD device.

[0007] Still another object of the present application is to provide an ALD device simulation system capable of optimizing the structure of the ALD device and improving the coating effect of the ALD device.

[0008] The present application provides a technical solution:

[0009] An ALD device simulation method comprises:

[0010] An initial simulation model is established based on an ALD device;

[0011] A coating simulation is performed on the initial simulation model according to set combination parameters to obtain a flow line diagram of gas flow rate, wherein the combination parameters include input flow rate of gas;

[0012] A first flow rate of gas in a coating area of the initial simulation model is calculated according to the flow line diagram, wherein the coating area represents a region where a wafer tray model is placed in the initial simulation model;

[0013] A flow rate ratio is calculated by taking the ratio of the first flow rate to the input flow rate;

[0014] The initial simulation model is adjusted according to the flow rate ratio until the flow rate ratio reaches a preset target threshold, and a target simulation model is obtained.

[0015] Further, the step of calculating a first flow rate of the gas in the coating area in the initial simulation model according to the streamline diagram comprises:

[0016] obtaining a first flow velocity of the gas in the coating area in the streamline diagram;

[0017] calculating a product of the first flow velocity and a cross-sectional area of the coating area to obtain the first flow rate.

[0018] Further, the step of adjusting the initial simulation model according to the flow rate ratio until the flow rate ratio reaches a preset target threshold to obtain a target simulation model comprises:

[0019] in a case where the flow rate ratio is less than a primary threshold, adjusting the initial simulation model until the flow rate ratio is greater than or equal to the primary threshold to obtain a primary simulation model;

[0020] in a case where the flow rate ratio is greater than or equal to the primary threshold and less than the target threshold, adjusting the primary simulation model until the flow rate ratio is greater than or equal to the target threshold to obtain the target simulation model.

[0021] Further, the initial simulation model comprises a reaction furnace model and a wafer tray model accommodated in the coating area of the reaction furnace model, the reaction furnace model is provided with a first inner side wall model, a bottom of the first inner side wall model is provided with a gas inlet model, and the step of adjusting the initial simulation model comprises:

[0022] adjusting a distance between the wafer tray model and the first inner side wall model in the initial simulation model.

[0023] Further, the step of adjusting the primary simulation model comprises:

[0024] adding a flow guide model between the first inner side wall model and the wafer tray model in the primary simulation model.

[0025] Further, the step of adjusting the primary simulation model comprises:

[0026] adding a baffle model to the primary simulation model and adjusting distances of the baffle model to the wafer tray model on two sides perpendicular to a gas flow direction.

[0027] Further, the step of adjusting the primary simulation model comprises:

[0028] A flow guide model is added between the first inner wall model and the wafer tray model in the primary simulation model, and a baffle model is added to the primary simulation model, and the distance between the baffle model and the wafer tray model on two sides perpendicular to the gas flow direction is adjusted.

[0029] Further, the initial threshold value ranges from 0.5 to 0.6, and the target threshold value ranges from 0.6 to 0.7.

[0030] The application further provides an ALD device simulation device, comprising:

[0031] A construction module is configured to establish an initial simulation model based on an ALD device.

[0032] A simulation module is configured to perform film coating simulation on the initial simulation model according to set combination parameters to obtain a flow line diagram of gas flow rate, wherein the combination parameters include input flow rate of gas.

[0033] A calculation module is configured to calculate a first flow rate of gas flow rate in a film coating area of the initial simulation model according to the flow line diagram, and to calculate a flow rate ratio of the first flow rate and the input flow rate.

[0034] An adjustment module is configured to adjust the initial simulation model according to the flow rate ratio until the flow rate ratio reaches a preset target threshold value, and to stop to obtain a target simulation model.

[0035] The application further provides an ALD device simulation system, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor executes the computer program to implement the ALD device simulation method, and the ALD device simulation method comprises:

[0036] An initial simulation model is established based on an ALD device.

[0037] Film coating simulation is performed on the initial simulation model according to set combination parameters to obtain a flow line diagram of gas flow rate, wherein the combination parameters include input flow rate of gas.

[0038] A first flow rate of gas flow rate in a film coating area of the initial simulation model is calculated according to the flow line diagram, wherein the film coating area represents a region where a wafer tray model is placed in the initial simulation model.

[0039] A flow rate ratio of the first flow rate and the input flow rate is calculated.

[0040] The initial simulation model is adjusted according to the flow ratio until the flow ratio reaches a preset target threshold, thus obtaining the target simulation model.

[0041] Compared to existing technologies, the ALD equipment simulation method provided by this invention calculates the gas flow rate in the coating area from the streamline diagram obtained through coating simulation to obtain a first flow rate. Then, it calculates the ratio of the first flow rate to the gas flow rate input to the model to obtain a flow rate ratio. Based on this flow rate ratio, the simulation model is structurally adjusted during the coating simulation process until the flow rate ratio reaches a target threshold, resulting in a target simulation model. This target simulation model is the model of the optimized ALD equipment. Users can then use this target simulation model to compare and produce ALD equipment with the required coating efficiency. Therefore, the beneficial effects of the ALD equipment simulation method provided by this invention include: optimizing the structure of the ALD equipment and improving the coating effect. Attached Figure Description

[0042] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of the present invention and should not be considered as limiting the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0043] Figure 1 A schematic diagram of the structure of the ALD device simulation system provided in the embodiments of the present invention;

[0044] Figure 2 A flowchart illustrating the ALD device simulation method provided for embodiments of the present invention;

[0045] Figure 3 This is a schematic diagram of the initial simulation model;

[0046] Figure 4 The streamline diagram is obtained from the coating simulation based on the initial simulation model;

[0047] Figure 5 for Figure 2 A flowchart illustrating a sub-step of step S103;

[0048] Figure 6 for Figure 2 A flowchart illustrating a sub-step of step S105;

[0049] Figure 7 for Figure 6 A flowchart illustrating a sub-step of neutron step S1051;

[0050] Figure 8 for Figure 6A sub-step flowchart of the neutron step S1052;

[0051] Figure 9 A structural schematic diagram of a target simulation model;

[0052] Figure 10 A connection block diagram of an ALD equipment simulation device provided by an embodiment of the present application.

[0053] Icon: 10-ALD equipment simulation system; 11-memory; 12-processor; 21-reaction furnace model; 22-coating area; 23-wafer tray model; 24-first inner sidewall model; 25-flow guide model; 26-baffle model; 100-ALD equipment simulation device; 110-constructing module; 120-simulating module; 130-calculating module; 140-adjusting module. DETAILED DESCRIPTION

[0054] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0055] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0056] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, thus, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0057] EMBODIMENT

[0058] Figure 1 A structural schematic block diagram of an ALD equipment simulation system 10 to which the ALD equipment simulation method and the ALD equipment simulation device 100 provided by an embodiment of the present application are applied, please refer to Figure 1 The ALD equipment simulation method and the ALD equipment simulation device 100 provided by the present embodiment are applied to the ALD equipment simulation system 10. The ALD equipment simulation system 10 includes a machine body (not shown in the figure), a memory 11, a processor 12 and the ALD equipment simulation device 100, and the memory 11 and the processor 12 are both installed on the machine body.

[0059] The memory 11 and the processor 12 are electrically connected with each other directly or indirectly to realize data transmission or interaction. For example, the elements can be electrically connected with each other through one or more communication buses or signal lines. The ALD device simulation apparatus 100 includes at least one software function module stored in the memory 11 in the form of software or firmware or solidified in an operating system (OS) of a server. The processor 12 is configured to execute the executable module stored in the memory 11, for example, a computer program of the corresponding ALD device simulation method included in the ALD device simulation apparatus 100.

[0060] The memory 11 can be, but is not limited to, a random access memory (RAM), a read only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), etc. The memory 11 is configured to store a program, and the processor 12 executes the program after receiving an execution instruction.

[0061] The following embodiments are used to specifically describe the working condition recognition method and the ALD device simulation apparatus 100.

[0062] Referring to FIG. 1, Figure 2 , Figure 2 FIG. 1 is a flowchart of an ALD device simulation method provided in the embodiment, and the ALD device simulation method includes the following steps.

[0063] In step S101, an initial simulation model is established based on an ALD device.

[0064] According to the physical structure of the ALD device, an Octree algorithm is used to divide a non-structured grid, and ElementQuality and Skewness are used to verify the quality of the grid. The state of the gas phase fluid is determined according to the Reynolds number and the Knudsen number, and the simulation model is determined to be a multiphase flow model.

[0065] In the embodiment, the established initial simulation model is as shown in FIG. 2. Figure 3As shown, the initial simulation model includes a reaction furnace model 21 and a wafer tray model 23 accommodated in a coating area 22 of the reaction furnace model 21, and the reaction furnace model 21 is provided with a first inner side wall model 24, and a gas inlet model (not shown in the figure) is arranged at the bottom of the first inner side wall model 24.

[0066] In step S102, the initial simulation model is simulated according to the set combination parameters to obtain a streamline diagram of the gas flow rate, wherein the combination parameters include the input flow rate of the gas.

[0067] The streamline diagram obtained by running the coating simulation based on the initial simulation model is as shown in Figure 4 As shown, on the basis of the initial simulation model, the combination parameters for running the coating simulation software are set according to the actual running environment of the ALD device, the combination parameters include the medium type, input flow rate, reaction temperature, outlet pressure, etc. of the gas, and the running is started to obtain the streamline diagram of the gas flow rate in the initial simulation model.

[0068] In step S103, the first flow rate of the coating area 22 in the initial simulation model is calculated according to the streamline diagram, wherein the coating area 22 represents the area where the wafer tray model 23 is placed in the initial simulation model.

[0069] As shown in Figure 5 , Figure 5 A sub-step flowchart diagram of step S103 is shown in

[0070] In sub-step S1031, the gas flow rate in the coating area 22 in the streamline diagram is obtained to obtain the first flow rate.

[0071] In sub-step S1032, the product of the first flow rate and the cross-sectional area of the coating area 22 is calculated to obtain the first flow rate.

[0072] The cross-sectional area of the coating area 22 refers to the cross-sectional area of the coating area 22 perpendicular to the direction of the gas flow, and the size of the cross-sectional area can be directly obtained according to the modeling data. According to the streamline diagram, the average flow rate of the gas flow in the coating area 22 can be calculated, and the product of the average flow rate and the cross-sectional area can be calculated to obtain the first flow rate of the gas in the coating area 22.

[0073] As shown in Figure 2 Further, the ALD device simulation method further includes:

[0074] In step S104, the ratio of the first flow rate to the input flow rate is calculated to obtain a flow rate ratio.

[0075] In step S105, the initial simulation model is adjusted according to the flow rate ratio, and the adjustment is stopped when the flow rate ratio reaches a preset target threshold value to obtain a target simulation model.

[0076] The flow rate ratio indicates the proportion of gas flowing through the coating area 22 to the input gas. The larger the flow rate ratio, the more gas enters the coating area 22, and the better the coating effect.

[0077] The target threshold is set according to the actual gas medium and working environment. During the coating simulation, the structure and shape of the initial model are adjusted and the flow ratio is calculated in real time. When the calculated flow ratio reaches the preset target threshold at a certain moment, the coating simulation is stopped. At this time, the corresponding simulation model is the target simulation model.

[0078] With the target simulation model in hand, users can adjust the geometry of the ALD device according to the target simulation model to obtain an ALD device with better coating effect.

[0079] Please see Figure 6 , Figure 6 The diagram shown is a flowchart illustrating a sub-step of step S105. Step S105 includes:

[0080] Sub-step S1051: If the flow ratio is less than the primary threshold, adjust the initial simulation model until the flow ratio is greater than or equal to the primary threshold to obtain the first-level simulation model.

[0081] In this embodiment, the initial simulation model is adjusted in stages. The value range of the primary threshold is 0.5 to 0.6. That is, the first-level adjustment adjusts the flow ratio to between 0.5 and 0.6 to obtain the first-level simulation model.

[0082] Please see Figure 7 , Figure 7 The diagram shown is a schematic flowchart of one sub-step S1051. Sub-step S1051 may include:

[0083] Sub-step S1051a: Adjust the distance between the wafer tray model 23 and the first inner sidewall model 24 in the initial simulation model.

[0084] The first-level adjustment involves adjusting the distance between the wafer tray model 23 and the first inner sidewall model 24. Calculations show that when the distance between the end of the wafer tray model 23 closest to the first inner sidewall and the first inner sidewall is between 46.5 mm and 48 mm, the flow rate ratio is between 0.5 and 0.6. In this embodiment, a preferred value of 47 mm is used; that is, in the first-level simulation model, the distance between the end of the wafer tray model 23 closest to the first inner sidewall and the first inner sidewall is 47 mm.

[0085] Please continue reading. Figure 6 Furthermore, step S105 also includes:

[0086] Sub-step S1052, in the case that the flow ratio is greater than or equal to the primary threshold value and less than the target threshold value, adjusting the primary simulation model until the flow ratio is greater than or equal to the target threshold value to obtain the target simulation model.

[0087] The target threshold value is in the range of 0.6 to 0.7, that is, the second-level adjustment adjusts the flow ratio in the primary simulation model to 0.6 to 0.7 to obtain the target simulation model.

[0088] Please refer to Figure 8 and Figure 9 , Figure 8 Figure 1 shows a sub-step flowchart of sub-step S1052, Figure 9 Figure 2 shows a structural diagram of the target simulation model, and sub-step S1052 can include:

[0089] Sub-step S1052a, adding a flow guide model 25 between the first inner side wall model 24 and the wafer tray model 23 in the primary simulation model, and adding a baffle model 26 to the primary simulation model, and adjusting the distance between the baffle model 26 and the wafer tray model 23 on both sides perpendicular to the gas flow direction.

[0090] The flow guide model 25 is in the shape of a horn, which guides the gas input by the gas inlet model to flow to the coating area 22, and the number of baffle models 26 is two, and the two baffle models 26 are respectively erected on both sides of the wafer tray model 23 parallel to the gas flow direction, to prevent the gas entering the wafer tray model 23 from flowing out from both sides without flowing through the wafer tray model 23.

[0091] In other embodiments, as long as the flow ratio reaches the target threshold value, other structural adjustments can be made to the primary simulation model, and only the flow guide model 25 can be added between the first inner side wall model 24 and the wafer tray model 23, or only the baffle model 26 can be added, and the distance between the baffle model 26 and the wafer tray model 23 on both sides perpendicular to the gas flow direction can be adjusted.

[0092] Please refer to Figure 10 The embodiment also provides an ALD device simulation device 100, which includes a construction module 110, a simulation module 120, a calculation module 130, and an adjustment module 140.

[0093] The construction module 110 is configured to establish an initial simulation model based on an ALD device. In the embodiment, step S101 can be performed by the construction module 110.

[0094] The simulation module 120 is configured to perform coating simulation on the initial simulation model according to the set combination parameters to obtain a flow line diagram of the gas flow rate, wherein the combination parameters include the input flow rate of the gas. In this embodiment, the step S102 can be performed by the simulation module 120.

[0095] The calculation module 130 is configured to calculate a first flow rate of the gas flow rate of the coating area 22 in the initial simulation model according to the flow line diagram, and calculate a flow rate ratio of the first flow rate to the input flow rate. The coating area 22 represents an area in which the wafer tray model 23 is placed in the initial simulation model. In this embodiment, the step S103 and the sub-steps of the step S103, and the step S104 can be performed by the calculation module 130.

[0096] The adjustment module 140 is configured to adjust the initial simulation model according to the flow rate ratio until the flow rate ratio reaches a preset target threshold value to obtain a target simulation model. In this embodiment, the step S105 and the sub-steps of the step S105 can be performed by the adjustment module 140.

[0097] In summary, the ALD device simulation system 10, the ALD device simulation method and the ALD device simulation apparatus 100 provided in this embodiment can calculate a first flow rate of the gas flow rate of the coating area 22 in the initial simulation model according to the flow line diagram obtained by the coating simulation, and then calculate a flow rate ratio of the first flow rate to the input flow rate of the gas. Then, the simulation model is adjusted according to the flow rate ratio during the coating simulation until the flow rate ratio reaches a target threshold value to obtain a target simulation model. The target simulation model is a model of an ALD device with an optimized structure. According to the target simulation model, a user can produce an ALD device with a coating efficiency meeting a standard.

[0098] Therefore, the ALD device simulation system 10, the ALD device simulation method and the ALD device simulation apparatus 100 provided in this embodiment can optimize the structure of the ALD device and improve the coating effect.

[0099] It should be noted that, in this document, the terms such as first and second are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms “include”, “contain” or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such a process, method, article or device. Without more limitations, the element defined by the statement “including a…” does not exclude the presence of another identical element in the process, method, article or device including the element.

[0100] The above description is only the preferred embodiment of the present application, and is not intended to limit the present application. The present application can have various changes and modifications for those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An ALD device simulation method, characterized in that, include: An initial simulation model was established based on an ALD device, wherein the ALD device is an atomic layer deposition coating device; The initial simulation model is subjected to coating simulation based on the set combination parameters to obtain a streamline diagram of gas flow rate, wherein the combination parameters include the gas input flow rate; The first flow rate is obtained by calculating the gas flow rate in the coating region of the initial simulation model based on the streamline diagram, wherein the coating region represents the area in the initial simulation model where the wafer tray model is placed; The ratio of the first flow rate to the input flow rate is calculated to obtain the flow rate ratio. The initial simulation model is adjusted according to the flow ratio until the flow ratio reaches a preset target threshold, thus obtaining the target simulation model. The step of adjusting the initial simulation model according to the flow ratio until the flow ratio reaches a preset target threshold to obtain the target simulation model includes: adjusting the initial simulation model when the flow ratio is less than the primary threshold until the flow ratio is greater than or equal to the primary threshold to obtain a first-level simulation model; and adjusting the first-level simulation model when the flow ratio is greater than or equal to the primary threshold and less than the target threshold until the flow ratio is greater than or equal to the target threshold to obtain the target simulation model. The initial simulation model includes a reactor model and a wafer tray model housed within the coating area of ​​the reactor model. The reactor model is provided with a first inner sidewall model, and an air inlet model is provided at the bottom of the first inner sidewall model. The step of adjusting the initial simulation model includes: adjusting the distance between the wafer tray model and the first inner sidewall model in the initial simulation model; The steps for adjusting the primary simulation model include: adding the flow guide model between the first inner wall model and the wafer tray model in the primary simulation model, and adding two baffle models to the primary simulation model. The two baffle models are respectively erected on both sides of the wafer tray model perpendicular to the gas flow direction, and adjusting the distance between the baffle models and the wafer tray model on both sides perpendicular to the gas flow direction.

2. The ALD device simulation method according to claim 1, characterized in that, The steps for calculating the gas flow rate in the coating region of the initial simulation model based on the streamline diagram to obtain the first flow rate include: The first flow velocity is obtained by acquiring the gas flow velocity within the coating area in the streamline diagram; The first flow rate is obtained by multiplying the first flow velocity by the cross-sectional area of ​​the coating region.

3. The ALD device simulation method according to claim 1, characterized in that, The primary threshold ranges from 0.5 to 0.6, and the target threshold ranges from 0.6 to 0.

7.

4. An ALD device simulation device, characterized in that, include: A construction module is used to build an initial simulation model based on an ALD device, wherein the ALD device is an atomic layer deposition coating device, and the initial simulation model includes a reactor model and a wafer tray model housed in the coating area of ​​the reactor model. The reactor model is provided with a first inner sidewall model, and an air inlet model is provided at the bottom of the first inner sidewall model. The simulation module is used to perform coating simulation on the initial simulation model according to the set combination parameters to obtain a streamline diagram of gas flow rate, wherein the combination parameters include the gas input flow rate; The calculation module is used to calculate the gas flow rate of the coating area in the initial simulation model according to the streamline diagram to obtain the first flow rate, and to calculate the ratio of the first flow rate to the input flow rate to obtain the flow rate ratio, wherein the coating area represents the area in the initial simulation model where the wafer tray model is placed; An adjustment module is used to adjust the initial simulation model according to the flow ratio until the flow ratio reaches a preset target threshold, thereby obtaining the target simulation model. The adjustment module is further configured to, when the flow ratio is less than the primary threshold, adjust the distance between the wafer tray model and the first inner wall model in the initial simulation model until the flow ratio is greater than or equal to the primary threshold, to obtain a first-level simulation model; the adjustment module is further configured to, when the flow ratio is greater than or equal to the primary threshold and less than the target threshold, add a flow guide model between the first inner wall model and the wafer tray model in the first-level simulation model, and add two baffle models to the first-level simulation model, with the two baffle models respectively erected on both sides of the wafer tray model perpendicular to the gas flow direction, and adjust the distance between the baffle models and the wafer tray model on both sides perpendicular to the gas flow direction until the flow ratio is greater than or equal to the target threshold, to obtain the target simulation model.

5. An ALD device simulation system, characterized in that, It includes a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the ALD device emulation method as described in any one of claims 1-3.

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