Plasma processing method and plasma processing apparatus

Abstract

The present application provides a plasma processing method and a plasma processing apparatus. The plasma processing method uses the plasma processing apparatus to process a substrate with plasma, and includes a control step of controlling based on a processing recipe, the processing recipe being composed of a plurality of processing steps, a plurality of processing parameters for processing the substrate being set for each of the processing steps, in the control step, in a case where it is judged that it is difficult to stabilize ignition of the plasma by the control based on the processing recipe as a result of comparing the processing recipe with predetermined ignition reference data, when a processing step including ignition of the plasma is executed, a part of the plurality of processing parameters is replaced with ignition parameter values different from the set parameter values during a period until a stabilization time at which the plasma reaches stabilization elapses, and after the stabilization time elapses, the control is performed using the originally set parameter values of the part of the processing parameters.

Description

TECHNICAL FIELD

[0001] The present application relates to a plasma processing method and a plasma processing apparatus. BACKGROUND

[0002] In Patent Literature 1, a processing apparatus for performing a prescribed processing on a semiconductor wafer is disclosed, which has a recipe making device for making a recipe. The recipe made by the making device is for specifying a flow of processing including one or more processing steps when the prescribed processing is performed in the processing apparatus. In the recipe, for each processing step, a processing condition such as a processing temperature is inputted as a parameter and is set. The operation of the processing apparatus can be controlled by a computer in accordance with the recipe.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2010-166005 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The technology of the present application can suppress a decrease in productivity and can properly perform ignition of plasma regardless of a processing condition.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] One embodiment of the present application is a plasma processing method that is a plasma processing method for processing a substrate with plasma using a plasma processing apparatus, characterized by including a control step of controlling based on a processing recipe, wherein the processing recipe is constituted of a plurality of processing steps, in the processing recipe, a parameter value of each of a plurality of processing parameters for processing the substrate is set for each of the processing steps, and in the control step, in a case where it is judged that it is difficult to stably ignite the plasma by control based on the processing recipe as a result of collating the processing recipe with predetermined ignition reference data, when the processing step including ignition of the plasma is performed, a part of the plurality of processing parameters is controlled by being replaced with a predetermined ignition parameter value different from the set parameter value during a predetermined stabilization time until the plasma reaches stabilization, and after the stabilization time elapses, the processing parameters are controlled using the originally set parameter value of the part of the processing parameters.

[0010] EFFECTS OF THE INVENTION

[0011] According to the present application, it is possible to suppress a decrease in productivity and to appropriately perform ignition of plasma regardless of processing conditions. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a diagram schematically showing an outline of a structure of a substrate processing system including the plasma processing apparatus of the present embodiment.

[0013] Figure 2 is a longitudinal sectional view showing an outline of a structure of the plasma processing apparatus of the present embodiment.

[0014] Figure 3 is a flowchart for explaining one example of substrate processing in the plasma processing apparatus of Figure 2

[0015] Figure 4 is a diagram for explaining one example of a processing recipe.

[0016] Figure 5 is a diagram for explaining one example of a processing recipe.

[0017] Figure 6 is a diagram for explaining one example of an ignition difficulty condition table.

[0018] EXPLANATION OF REFERENCE NUMERALS

[0019] 2 plasma processing apparatus, 3c control section, 10a vessel main body, 20 metal window, 30 mounting table, G substrate, T ignition condition table, Ts stabilization time, U control section. DETAILED DESCRIPTION

[0020] In a manufacturing process of a flat panel display (FPD) such as a liquid crystal display device (LCD), a prescribed processing such as etching processing and film forming processing of a substrate such as a glass substrate is performed using plasma.

[0021] Further, the prescribed processing using plasma (hereinafter, referred to as "plasma processing") is performed by a plasma processing apparatus based on a processing recipe. The processing recipe is constituted of a plurality of processing steps, and for each processing step, a parameter value of each of a plurality of processing parameters for processing a substrate is set. In other words, the processing recipe is constituted of a plurality of processing steps, and for each processing step, a processing condition of each of a plurality of processing conditions for processing a substrate is set.

[0022] ​However, in a case where a processing condition, i.e., a parameter value (for example, a pressure value in a processing vessel of a plasma processing apparatus) set in a processing recipe, there is a case where plasma cannot be ignited. As a solution to this case, there is a method of making the pressure in the processing vessel higher at the time of making the processing recipe than at the time of plasma processing, or a method of inserting an ignition step for igniting plasma in the processing recipe.

[0023] However, in this method, there is a case where insertion of the ignition step is omitted.

[0024] In addition, there is a case where it is difficult to appropriately set a parameter value in the ignition step depending on the proficiency of an operator.

[0025] Furthermore, in a case where the ignition step is inserted, the time until plasma after ignition is stabilized also sometimes differs depending on the parameter value, and thus the time of the ignition step is set with a margin. In this way, the productivity is reduced due to the insertion of the ignition step.

[0026] In addition, when the ignition step is inserted, the number of steps increases, and thus, in a case where the set contents are confirmed, the confirmation operation becomes cumbersome, and the like, and it is difficult to manage.

[0027] Therefore, the technology of the present application can suppress reduction in productivity, and appropriately perform ignition of plasma regardless of a processing condition.

[0028] Hereinafter, a plasma processing method and a plasma processing apparatus according to the present embodiment will be described with reference to the drawings. Furthermore, in the present specification and the drawings, for elements having substantially the same functional structure, the same reference numerals are attached, and repeated description is omitted.

[0029] <Substrate processing system 1>

[0030] Figure 1 is a diagram schematically showing an outline of a structure of a substrate processing system including a plasma processing apparatus according to the present embodiment.

[0031] As shown in Figure 1 , the substrate processing system 1 has a plasma processing apparatus 2 and a global control apparatus 3. The number of the plasma processing apparatus 2 possessed by the substrate processing system 1 can be one or a plurality.

[0032] In the substrate processing system 1, the plasma processing apparatus 2 and the global control apparatus 3 are connected so as to be communicable via a network N. Furthermore, the connection manner of the plasma processing apparatus 2 and the global control apparatus 3 to the network N can be wired connection or wireless connection.

[0033] The plasma processing apparatus 2 is capable of performing a plasma process based on a processing gas, i.e., a plasma process, on a glass substrate G (see FIG. 1) which is a substrate having a rectangular shape in plan view. The plasma process performed by the plasma processing apparatus 2 is, for example, an etching process, a film forming process, an ashing process, or the like for an FPD. Through these plasma processes, electronic devices such as light emitting elements, drive circuits for light emitting elements, or the like can be formed on the glass substrate G (hereinafter, referred to as "substrate G"). Figure 2 ) which is a substrate having a rectangular shape in plan view. The plasma process performed by the plasma processing apparatus 2 is, for example, an etching process, a film forming process, an ashing process, or the like for an FPD. Through these plasma processes, electronic devices such as light emitting elements, drive circuits for light emitting elements, or the like can be formed on the glass substrate G (hereinafter, referred to as "substrate G").

[0034] The overall control apparatus 3 has a display portion 3a, an operation input portion 3b, and a control portion 3c.

[0035] The display portion 3a is used for displaying various information, and is constituted by, for example, a liquid crystal display, an organic EL display, or the like.

[0036] The operation input portion 3b is used for receiving operation input from a user, and is constituted by, for example, a mouse, a keyboard, or the like. The operation input portion 3b is used, for example, when a processing recipe is created.

[0037] The control portion 3c is realized by, for example, a computer, and includes a processing portion 3c1 and a storage portion 3c2.

[0038] The processing portion 3c1 is capable of reading and executing various programs such as a program for creating / holding a processing recipe from the storage portion 3c2. The processing portion 3c1 is, for example, a CPU. The above program can also be recorded in a storage medium which is readable by a computer, and installed from the storage medium. The storage medium can be a temporary storage medium, or a non-temporary storage medium.

[0039] The storage portion 3c2 is used for storing various information, and is a RAM, a ROM, an HDD, an SSD, or a combination thereof.

[0040] <Plasma Processing Apparatus 2>

[0041] Figure 2 is a longitudinal sectional view showing an outline of the structure of the plasma processing apparatus 2.

[0042] As shown in the figure, the plasma processing apparatus 2 includes a container main body 10 of a bottomed square tube shape. The container main body 10 is formed of an electrically conductive material such as aluminum, and is electrically grounded. Since an etching gas is often used in plasma processing, in order to improve corrosion resistance, an anticorrosion coating treatment such as an anodizing treatment can be performed on the inner wall surface of the container main body 10. In addition, an opening is formed in the upper surface of the container main body 10. The opening can be hermetically closed by a rectangular metal window 20 that is provided so as to be insulated from the container main body 10, specifically, by the metal window 20 and a metal frame 14 that will be described later. The space surrounded by the container main body 10 and the metal window 20 becomes a processing space Kl in which a substrate G that is a processing target of plasma processing is placed at the time of plasma processing, and the space on the upper side of the metal window 20 becomes an antenna chamber K2 for arranging a high-frequency antenna (plasma antenna) 100 that will be described later. A loading and unloading port (not shown) for feeding the substrate G into or out of the processing space Kl and a gate valve (not shown) for opening and closing the loading and unloading port are provided on the side wall of the container main body 10.

[0043] On the lower side of the processing space Kl, a stage 30 is provided in opposition to the metal window 20. The stage 30 has a stage main body 31 whose upper surface becomes a substrate placement surface for placing the substrate G, and the stage main body 31 is provided on the bottom surface of the container main body 10 via a leg portion 32. The leg portion 32 is composed of, for example, a support portion for supporting the stage main body 31, a protection ring for covering the side surface of the stage main body 31, and a focus ring that is placed on the protection ring at the peripheral edge portion of the substrate G, but these are not shown.

[0044] The stage main body 31 is provided with a base portion 31a composed of an electrically conductive material such as aluminum, and an electrostatic chuck 31b that can hold the substrate G by electrostatic adsorption.

[0045] The base portion 31a is connected to a high-frequency power source 41 via a matcher 40. The high-frequency power source 41 can supply a high-frequency electric power for biasing, for example, a high-frequency electric power of 3.2 MHz, to the base portion 31a. Thereby, ions in plasma generated in the processing space Kl can be directed toward the substrate G.

[0046] An exhaust port 11 is formed in the bottom wall of the container main body 10, and the exhaust port 11 is connected to an exhaust portion 50 having a vacuum pump or the like. The processing space Kl can be depressurized by the exhaust portion 50. It can be that the exhaust portion 50 is provided for each of the plurality of exhaust ports 11, or that the exhaust portion 50 is provided commonly for the plurality of exhaust ports 11.

[0047] On the upper surface of the sidewall of the container body 10, a metal frame 14, which is a rectangular frame made of a metal material such as aluminum, is provided. Between the container body 10 and the metal frame 14, a sealing member 15 is provided to keep the processing space K1 airtight. In addition, the container body 10, the metal frame 14, and the metal window 20 constitute a processing container that can depressurize (create a depressurized environment) and accommodate the stage 30.

[0048] The metal window 20 is, for example, rectangular in shape when viewed from above. Furthermore, the metal window 20 can function as a nozzle for supplying processing gas to the processing space K1. For example, the metal window 20 has multiple gas release holes 21 for releasing processing gas downwards and a diffusion chamber 22 for diffusing the processing gas, with the gas release holes 21 communicating with the diffusion chamber 22.

[0049] The diffusion chamber 22 is connected to the processing gas supply unit 81 via a gas supply pipe 80. The processing gas supply unit 81 includes a flow regulating valve (not shown) and an on / off valve (not shown), which can supply the processing gas required for etching, film formation, ashing and other processes to the diffusion chamber 22.

[0050] In addition, insulating component 23 is used to electrically insulate the metal window 20 from the metal frame 14.

[0051] The space surrounded by the metal window 20, the side wall portion 91 and the top plate portion 90 constitutes the antenna chamber K2. Inside the antenna chamber K2, a high-frequency antenna 100 is arranged facing the metal window 20.

[0052] The high-frequency antenna 100 is arranged at a distance from the metal window 20, for example, through a spacer (not shown) made of insulating material.

[0053] The high-frequency power supply 43 is connected to the high-frequency antenna 100 via a matching adapter 42. For example, a high-frequency power of 13.56 MHz can be supplied from the high-frequency power supply 43 to the high-frequency antenna 100 via the matching adapter 42. Thus, during plasma processing, an induced electric field can be formed inside the processing space K1 via the metal window 20, and the processing gas released from the gas release port 21 can be plasmaized using this induced electric field.

[0054] In addition, such as Figure 2 As shown, a control unit U is provided in the plasma processing apparatus 2. The control unit U is implemented by a computer, for example, and includes a processing unit U1 and a storage unit U2.

[0055] The processing section U1 is capable of reading and executing various programs such as a program for implementing plasma processing from the storage section U2. The processing section U1 is, for example, a CPU. The above program can also be recorded in a storage medium that is readable by a computer and installed from the storage medium. The storage medium can be a temporary storage medium or a non-temporary storage medium.

[0056] The storage section U2 is for storing various information and is a RAM, a ROM, an HDD, an SSD, or a combination thereof.

[0057] <Substrate Processing>

[0058] Next, substrate processing in the plasma processing apparatus 2 will be described. Figure 3 is a flowchart for describing one example of substrate processing in the plasma processing apparatus 2. Figure 4 and Figure 5 is a diagram for describing one example of a processing recipe. Figure 6 is a diagram for describing one example of a difficult ignition condition table to be described later.

[0059] (Process P1)

[0060] First, the substrate G is carried into the plasma processing apparatus 2.

[0061] Specifically, under the control of the control section U, a gate valve of a carry-in / out port (not shown) of the side wall of the container body 10 is opened, the substrate G is carried into the processing space K1 via the above carry-in / out port, and placed on the placement table 30. Then, the above gate valve is closed. Then, the processing space K1 is exhausted by the exhaust section 50 until the processing space K1 becomes a predetermined pressure.

[0062] (Process P2)

[0063] Next, control based on the processing recipe is performed. This process includes, for example, the following processes P2a to P2c.

[0064] In addition, as described above, the processing recipe is composed of a plurality of processing steps, and in the processing recipe, a parameter value of each of a plurality of processing parameters for processing the substrate G is set for each processing step. Specifically, as shown in Figure 4 and Figure 5 the processing recipe is composed of a plurality of processing steps including at least the pressure adjustment step S1 and the plasma processing step S2 immediately after the pressure adjustment step S1. In addition, the processing parameters and their parameter values in the processing recipe are, for example:

[0065] • the pressure Pr (a parameter value is a pressure value) in the processing container, i.e., the processing space K1;

[0066] • Output power Wb from high-frequency power supply 41 (parameter value is the output power value);

[0067] • Output power Ws from high-frequency power supply 43 (parameter value is the output power value);

[0068] • The presence or absence of electrostatic adsorption of the electrostatic chuck 31b (parameter value: "Presence / absence of electrostatic adsorption");

[0069] • Type of gas to be processed (parameter value is the name of the gas to be processed);

[0070] • The flow rate of the processed gas (parameter value is the flow rate value); etc.

[0071] (Process P2a)

[0072] When performing control based on the processing scheme, the control unit U first determines whether it is difficult to achieve stable plasma ignition through object-based control.

[0073] This judgment is made, for example, based on the object's processing scheme and the ignition condition table T; in other words, the object's processing scheme is compared with the ignition condition table T.

[0074] Ignition condition table T is an example of ignition reference data, which records parameter values ​​of processing parameters that are difficult to stably ignite the plasma, and is stored in storage unit U2.

[0075] like Figure 6 As shown, in the ignition condition table T, for example, for each combination of the information of the name of the process gas in the plasma processing step S2 and the information of the presence or absence of electrostatic adsorption, the pressure threshold of the processing space K1 that enables stable ignition of the plasma (hereinafter referred to as the "plasma stable ignition pressure threshold") Pth is recorded.

[0076] In addition, the stabilization time, which will be described later, is recorded in the ignition condition table T for each of the above combinations.

[0077] In the judgment using the ignition condition table T, firstly, referring to the ignition condition table T, the plasma stable ignition pressure threshold Pth in the plasma treatment step S2 is extracted based on the combination of the treatment gas name and the presence / absence of electrostatic adsorption information in the plasma treatment step S2 set in the object's treatment scheme.

[0078] Then, based on whether the pressure value Pr2 of the processing space K1 in the plasma processing step S2 set in the object's processing scheme is less than the extracted plasma stable ignition pressure threshold Pth, it is determined whether stable plasma ignition is difficult to achieve. Specifically, in such cases... Figure 5When Pr2 < Pth as shown, it is determined that it is difficult to cause the plasma to stably ignite by the control based on the object processing recipe, and the plasma processing step S2 is executed as Figure 4 When Pr2 ≥ Pth as shown, it is determined that it is not difficult to cause the plasma to stably ignite by the control based on the object processing recipe.

[0079] In addition, when the combination of the processing gas name in the plasma processing step S2 set in the object processing recipe and the information of the presence / absence of electrostatic chucking is not in the ignition condition table T, it is also determined that it is not difficult to cause the plasma to stably ignite.

[0080] Further, the determination is not limited to be performed after the process P1, but can be performed before the process P1, or in the middle of the process P1.

[0081] (Process P2b)

[0082] In a case where it is determined that it is difficult to cause the plasma to stably ignite by the control based on the object processing recipe (in the process P2a, "Yes"), each part of the plasma processing apparatus 2 is also controlled by the control section U based on the processing recipe. However, when the plasma processing step S2 including ignition of the plasma is executed, the processing parameter value is temporarily replaced with a processing parameter value that can reliably cause the plasma to ignite, that is, an ignition parameter value, which is determined in advance. Hereinafter, a case where it is determined that it is difficult to cause the plasma to stably ignite by the control based on the object processing recipe will be described in detail.

[0083] (Process P2b1)

[0084] First, the control section U executes the pressure adjustment step S1 based on the processing recipe in accordance with the processing recipe.

[0085] In the pressure adjustment step S1, specifically, under the control of the control section U, in a state where the exhaust of the processing space K1 by the exhaust section 50 is continued, the processing gas of the gas name set in the pressure adjustment step S1 of the object processing recipe is supplied from the processing gas supply section 81 to the processing space K1 via the diffusion chamber 22. At this time, the processing gas is supplied at the flow rate value set in the pressure adjustment step S1 of the object processing recipe. Thereby, the inside of the processing space K1 is adjusted to the pressure value Pr1 set in the pressure adjustment step S1 of the object processing recipe. In addition, under the control of the control section U, the electrostatic chucking of the wafer W is appropriately performed by the electrostatic chuck 31b in accordance with the setting in the processing recipe.

[0086] Further, the processing recipe is made and stored as described later, and therefore, the pressure value Pr1 set in the pressure adjustment step S1 of the processing recipe is not less than the plasma stable ignition pressure threshold value Pth corresponding to the plasma processing step S2 set in the processing recipe.

[0087] (Step P2b2)

[0088] Immediately after the pressure adjustment step S1, the plasma processing step S2 including ignition of plasma is executed by the control section U based on the processing recipe.

[0089] In the plasma processing step S2, under the control of the control section U, the high-frequency electric power of the output power value set in the plasma processing step S2 of the subject processing recipe is supplied from the high-frequency power source 43 to the high-frequency antenna 100 while continuing the state of the exhaust of the processing space K1 by the exhaust section 50 and the supply of the processing gas to the processing space K1, and so on. At the same time, the high-frequency electric power of the output power value set in the plasma processing step S2 of the subject processing recipe is supplied from the high-frequency power source 41 to the base portion 31a of the placement table 30.

[0090] At this time, when the control is performed based on the pressure value Pr2 set in the plasma processing step S2 of the subject processing recipe, that is, when the control is performed so that the processing space K1 becomes the pressure value Pr2 set in the plasma processing step S2 of the subject processing recipe, Pr2 < Pth, and thus the plasma is not ignited. Therefore, as described above, the control section U controls the exhaust section 50 and so on based on the result of the judgment in the step P2a so that the pressure value of the processing space K1 becomes the ignition pressure value Pf different from the pressure value Pr2 set in the plasma processing step S2 of the processing recipe, by replacing the pressure value Pr2 set in the plasma processing step S2 of the processing recipe with the predetermined ignition pressure value Pf. The ignition pressure value Pf is one example of the ignition parameter value, and for example, the plasma stable ignition pressure threshold value Pth extracted in the step P2a can be used. As described above, the pressure value Pr1 set in the pressure adjustment step S1 of the processing recipe is not less than the plasma stable ignition pressure threshold value Pth corresponding to the plasma processing step S2 set in the processing recipe, and thus can be the above-described pressure value Pr1 as the ignition pressure value Pf. In this case, the replacement of the pressure value in the step S2 substantially means that the pressure Pr adjusted to the ignition pressure value Pf in the pressure adjustment step S1 is continuously maintained.

[0091] Such replacement of the pressure value Pr2 set in the plasma processing step S2 can be performed during a predetermined stabilization time Ts required for the plasma after ignition to reach stabilization.

[0092] Specifically, the above-described replacement can be performed from the beginning of the plasma processing step S2. In addition, the timing at which the above-described replacement ends is a timing at which the stable time Ts elapses after the high-frequency electric power from the high-frequency power source 43 and the high-frequency electric power from the high-frequency power source 41 both become the output power value set in the plasma processing step S2 of the processing recipe of the object. The stable time Ts is used to define the timing at which the replacement of the data used in the setting of the pressure value of the processing space K1 described above ends, and is recorded in the ignition condition table T, for example, in correspondence with the plasma stable ignition pressure threshold Pth. In addition, in the case of the above-described stable time Ts, the stable time Ts corresponding to the plasma stable ignition pressure threshold Pth can be extracted together when the plasma stable ignition pressure threshold Pth is extracted in the process P2a. The extracted stable time Ts can be used for the replacement as described above.

[0093] As described above, in the present embodiment, when the pressure value Pr2 set in the plasma processing step S2 is replaced, the processing recipe is not rewritten.

[0094] (Process P2b3)

[0095] After the stable time elapses, the control section U performs control based on the pressure value Pr2 originally set in the plasma processing step S2 of the processing recipe of the object, that is, performs control so that the inside of the processing space K1 becomes the pressure value Pr2 set in the plasma processing step S2 of the processing recipe of the object. This control is performed until the end of the plasma processing step S2.

[0096] In addition, when there is a processing step after the plasma processing step S2, this processing step is also performed based on the parameter value set in the processing recipe of the object. That is, in the case where a plurality of processing steps are continuous, the above-described pressure adjustment control for ignition can be performed only in the initial processing step, and it is not necessary to perform the above-described pressure adjustment control for ignition for each of the continuous processing steps.

[0097] (Process P2c)

[0098] On the other hand, when it is judged in the process P2a that it is difficult to cause the plasma to stably ignite by the control based on the processing recipe of the object (in the case of "No"), the control section U performs the control based on the processing recipe without performing the replacement to the pressure value for ignition Pf. Thus, each processing step constituting the processing recipe is executed in accordance with the processing recipe.

[0099] (Process P3)

[0100] After the control based on the processing recipe in the process P2 ends, the electric power supply from the high-frequency power sources 41, 43 and the processing gas supply from the processing gas supply section 81 are stopped, and the substrate G is delivered out in the reverse order to the delivery-in.

[0101] Thus, a series of substrate processing ends.

[0102] <Processing recipe production example>

[0103] Next, a processing recipe production example of the present embodiment will be described.

[0104] (Process Pll)

[0105] First, the control section 3c of the overall control device 3 produces a processing recipe based on the input of the user to the operation input section 3b.

[0106] (Process P12)

[0107] Next, when the control section 3c receives an input of the user instructing to save the processing recipe via the operation input section 3b, it judges whether or not the combination of the processing gas name in the plasma processing step S2 and the information of the presence / absence of electrostatic adsorption set in the produced processing recipe has been recorded in the ignition condition table T. When the above combination has not been recorded in the ignition condition table T, the produced processing recipe is saved, i.e., stored in the storage section 3c2.

[0108] (Process P13)

[0109] On the other hand, when the above combination has been recorded in the ignition condition table T in the process P12, it judges whether or not the pressure value Pr2 in the plasma processing step S2 of the produced processing recipe is smaller than the plasma stable ignition pressure threshold value Pth corresponding to the above combination recorded in the ignition condition table T. When Pr2 ≥ Pth, the produced processing recipe is saved, i.e., stored in the storage section 3c2.

[0110] Further, when Pr2 < Pth in the process P13, it judges whether or not the pressure value Prl in the pressure regulating step Sl of the produced processing recipe is Pth or more, which is the plasma stable ignition pressure threshold value corresponding to the above combination recorded in the ignition condition table T. When Prl ≥ Pth, the produced processing recipe is saved, i.e., stored in the storage section 3c2.

[0111] In the case where Pr1 < Pth, the created processing recipe is not saved in the storage section 3c2, but, for example, under the control of the control section 3c, a message indicating a warning (specifically, a message indicating that the pressure of the pressure adjustment step S1 is inappropriate) is displayed on the display section 3a. Alternatively, a message urging a change in the pressure value set in the processing recipe (specifically, a message urging a change in the pressure value Pr1 of the pressure adjustment step S1) can be displayed on the display section 3a. At this time, the corresponding plasma stable ignition pressure threshold value Pth can be displayed, and a message urging a change so that the pressure value Pr1 of the pressure adjustment step S1 is greater than the plasma stable ignition pressure threshold value Pth can be displayed. After the pressure value Pr1 is changed in pressure to a pressure value greater than the plasma stable ignition pressure threshold value Pth, the processing recipe is saved in the storage section 3c2.

[0112] Further, the notification urging a change in the processing recipe can be performed by sound.

[0113] The processing recipe created by the present method and saved in the storage section 3c2 is transmitted to the control section U and stored in the storage section U2 at a prescribed timing.

[0114] As described above, in the present embodiment, in the case where it is determined that it is difficult to cause the plasma to stably ignite by the control based on the processing recipe, the control is performed in the following manner. That is, in the present example, when the plasma processing step S2 including ignition of the plasma is executed, the ignition step is not inserted, and during the period until the stabilization time elapses, a part of the parameters is replaced with an ignition-use parameter value (in the present example, the plasma stable ignition pressure threshold value Pth) to perform the control. After the stabilization time elapses, the replacement of the above-described part of the parameters is stopped, and the control is performed using the parameter value set in the original processing recipe. In this way, in the present embodiment, even if the processing condition other than the pressure in the plasma processing step S2 is a processing condition in which ignition is difficult, the pressure value in which ignition is easy is automatically replaced. Further, at this time, it is not necessary to insert the ignition step or other steps that would result in a decrease in productivity. Therefore, with the present embodiment, it is possible to suppress a decrease in productivity, and to appropriately perform ignition of the plasma regardless of the processing condition. Moreover, because the pressure value in which ignition is easy is automatically replaced, it is possible to appropriately perform ignition of the plasma regardless of the proficiency of the creator of the processing recipe.

[0115] Further, in the present embodiment, the replacement of the pressure value Pr2 set in the plasma processing step S2 is not ended immediately when both the high-frequency electric power from the high-frequency power source 43 and the high-frequency electric power from the high-frequency power source 41 become the set output power value of the processing scheme of the object, and the processing space K1 becomes low pressure. Instead, after the above two become the set output power value of the processing scheme, the replacement is ended after a stabilization time, and the plasma is stabilized, and the processing space K1 becomes low pressure. Therefore, with the present embodiment, the ignition of the plasma can be performed more appropriately.

[0116] (Modified example)

[0117] In the above example, the ignition condition table T is used when the control section U judges whether or not it is difficult to ignite the plasma stably by the control based on the processing scheme of the object. Instead, in the overall control device 3, the ignition condition table T can be used to judge whether or not it is difficult to ignite the plasma stably by the control based on each processing scheme in advance, and in the case where the same judgment is made by the control section U, the judgment result in the overall control device 3 can be used without using the ignition condition table T. In this case, the judgment result in the overall control device 3, the plasma stable ignition pressure threshold value Pth, and the stabilization time corresponding to each processing scheme are transmitted from the overall control device 3 to the control section 3c, and stored in the storage section U2.

[0118] The embodiments disclosed this time can be modified in various ways without departing from the spirit of the application. The above-described embodiments can be omitted, replaced, or changed in various ways without departing from the scope and spirit of the appended claims.

Claims

1. A plasma processing method, which is a plasma processing method for processing a substrate using plasma using a plasma processing device, characterized in that: The system includes control procedures based on a processing scheme, wherein the processing scheme comprises multiple processing steps, and each processing step is assigned parameter values ​​for multiple processing parameters used to process the substrate. In the control process, if the result of comparing the processing plan with predetermined ignition reference data indicates that it is difficult to stably ignite the plasma through control based on the processing plan, then when performing the processing step including the ignition of the plasma, During the period until the plasma reaches a predetermined stabilization time, a portion of the multiple processing parameters are replaced with predetermined ignition parameter values ​​that are different from the set parameter values ​​for control. After the stabilization period, the original parameter values ​​of the aforementioned processing parameters are used for control.

2. The plasma treatment method as described in claim 1, characterized in that: When the aforementioned processing parameters are replaced with the ignition parameter values, the processing scheme is not rewritten.

3. The plasma treatment method as described in claim 1 or 2, characterized in that: The aforementioned processing parameters are parameters related to the pressure of the processing space within the processing container of the plasma processing device, which is capable of accommodating the substrate.

4. The plasma treatment method as described in claim 3, characterized in that: In the pressure regulation step, which immediately precedes the processing step including the ignition of the plasma, the pressure parameter inside the processing container is set to a value greater than or equal to the ignition parameter value.

5. The plasma treatment method as described in claim 1 or 2, characterized in that: The ignition parameter values ​​and the stabilization time are set accordingly to other processing parameters that are different from the aforementioned portion of the processing parameters.

6. The plasma treatment method as described in claim 5, characterized in that: The other processing parameters are parameters indicating the type of gas used in the processing using the plasma, and parameters indicating whether electrostatic adsorption is performed to hold the substrate on the stage within the plasma processing apparatus.

7. The plasma treatment method as described in claim 1 or 2, characterized in that: In the control process, if it is determined that it is not difficult to stably ignite the plasma through control based on the processing scheme, the control is performed without replacing some of the processing parameters with the ignition parameter values.

8. A plasma processing apparatus, characterized in that, it is a plasma processing apparatus capable of processing a substrate using plasma, and is further characterized in that, include: A mounting stage capable of holding a substrate; The processing container is capable of depressurizing the processing container and of housing the platform inside the processing container; and Control Department The control unit is capable of control based on a processing scheme, wherein the processing scheme consists of multiple processing steps, and in the processing scheme, parameter values ​​are set for each of the multiple processing parameters used to process the substrate for each processing step. If, after comparing the processing plan with predetermined ignition reference data, it is determined that it is difficult to stably ignite the plasma through control based on the processing plan, then when performing the processing steps including the ignition of the plasma, During the period until the plasma reaches a predetermined stabilization time, a portion of the multiple processing parameters are replaced with predetermined ignition parameter values ​​that are different from the set parameter values ​​for control. After the stabilization period, the original parameter values ​​of the aforementioned processing parameters are used for control.

Images