Stage and method of manufacturing the same

Abstract

A stage includes a base material having a first surface recessed from an upper surface and a second surface recessed from a side surface, and an insulating film including a plurality of first layers disposed on the first surface and a plurality of second layers disposed on the second surface, at a step at which first end portions of the first layers and second end portions of the second layers are alternately layered. The first surface and the second surface can be connected by a corner at which the first end portions and the second end portions can be alternately layered. The first surface and the second surface can be connected by a corner at which the insulating film formed by the first end portions and the second end portions alternately layered can be formed.

Description

Technical Field

[0001] One embodiment of the present invention relates to a stage and a method of manufacturing the same, for example, to a stage for mounting a substrate and a method of manufacturing the same. Background Technology

[0002] Semiconductor devices are integrated into almost all electronic devices, playing a crucial role in their functionality. Semiconductor devices utilize the semiconductor properties of materials such as silicon. They are constructed by stacking semiconductor films, insulating films, and conductive films on a substrate and patterning these films. These films are stacked using methods such as vapor deposition, sputtering, chemical vapor deposition (CVD), or chemical reactions of the substrate, and then patterned using photolithography. The photolithography process includes: forming a resist on these patterned films; exposing the resist; forming a resist mask through development; partially removing the films by etching; and removing the resist mask.

[0003] The properties of the aforementioned film are largely influenced by the conditions under which the film is formed or etched. One of these conditions is the voltage applied to the stage (hereinafter referred to as the stage) used to mount the substrate. In recent years, with the miniaturization of semiconductor devices, the ratio of the diameter of the processed hole to the thickness of the processed film has increased. Therefore, for example, there is a trend of increasing the voltage applied to the stage contained in the etching equipment. As the voltage applied to the stage increases, it is necessary to improve the voltage withstand capability of the components contained in the stage. Components contained in the stage include, for example, cooling plates, electrostatic chucks, etc. Patent Documents 1 and 2 disclose a stage that uses ceramic sputtering, as one of the sputtering methods, to form an insulating film on the surface, thereby improving the voltage withstand capability of the insulating film.

[0004] (Existing technical literature)

[0005] (Patent Documents)

[0006] Patent Document 1: Japanese Patent No. 6027407

[0007] Patent Document 2: Japanese Utility Model Publication No. 2600558 Summary of the Invention

[0008] (The problem the invention aims to solve)

[0009] In traditional spray coating methods, after forming a film of a specified thickness on one surface, the spray coating machine is moved to form films of the same specified thickness on other surfaces. In this method, the boundary between the sprayed surface and other surfaces (hereinafter also referred to as the junction, corner, or perimeter) is difficult for the sprayed material to adhere, particularly resulting in gaps or voids at the corners. If gaps or voids occur at the corners, the film's withstand voltage (also known as breakdown voltage) decreases. As a method to suppress the formation of gaps or voids at the corners, there are methods for directly spray coating the corners. For example, if the spray coating machine is continuously moved from one surface to another while performing spray coating, the corners can also be spray coated, suppressing the formation of gaps or voids at the corners. However, this method suffers from the problem that the film thickness at the corners becomes larger compared to the film thickness on one or other surfaces. When the film thickness formed at the corners increases, the adhesion strength of the film at the corners decreases, thus reducing the reliability of the stage. Therefore, when using the spraying method to manufacture a stage, it is desirable not only for the film formed on the surface, but also for the film formed at the corners to be controlled to have a specified film thickness (i.e., to make the film thickness uniform) in order to improve the adhesion strength and voltage resistance of the film.

[0010] In view of the above-mentioned problems, one objective of this invention is to provide a stage comprising an insulating film with improved adhesion strength and voltage resistance, and which exhibits excellent insulation performance and reliability. Another objective of this invention is to provide a method for manufacturing a stage that forms an insulating film with improved adhesion strength and voltage resistance, and exhibits excellent insulation performance and reliability.

[0011] (The measures taken to solve the problem)

[0012] An embodiment of the present invention relates to a stage comprising: a substrate having a step including a first surface recessed from the top and a second surface recessed from the side; and an insulating film comprising a plurality of first layers disposed on the first surface and a plurality of second layers disposed on the second surface, wherein at the step, first ends of the first layers and second ends of the second layers are alternately stacked.

[0013] An embodiment of the present invention relates to a method for manufacturing a stage that performs at least two cycles, the cycle comprising: moving a spray plating machine along a surface substantially parallel to the upper surface of a substrate while forming a first layer formed by spray plating from the spray plating machine on a first surface recessed from the upper surface; and moving the spray plating machine along a surface substantially parallel to the side surface of the substrate while forming a second layer formed by spray plating from the spray plating machine on a second surface recessed from the side surface, and forming an insulating film on a step including the first surface and the second surface of the substrate, wherein the first end of the first layer and the second end of the second layer are alternately stacked.

[0014] The cycle may also include the step of moving the spraying machine along a surface substantially parallel to the lower surface of the substrate while forming a third layer on the lower surface by spraying from the spraying machine.

[0015] It is also possible to form a third layer on the lower surface by spraying from the spraying machine, while moving the spraying machine along a surface that is substantially parallel to the lower surface of the substrate, independently of the aforementioned cycle.

[0016] In a loop, at least one of the steps for forming the first layer and the steps for forming the second layer can be performed multiple times.

[0017] In at least one of the steps of forming the first layer and forming the second layer, the spraying machine can perform spraying by moving only in one direction.

[0018] In at least one of the steps of forming the first layer and forming the second layer, the spraying machine can move in a zigzag pattern to perform spraying.

[0019] The first and second surfaces can be connected by a corner, on which an insulating film composed of alternating layers of the first and second ends can be formed. The thickness of the insulating film at the corner can be more than 1 and less than 2 times the thickness of the insulating film on the first surface and the insulating film on the second surface, respectively.

[0020] The first end can be configured to convexly protrude relative to the first surface and be inclined relative to the first surface. The second end can be configured to convexly protrude relative to the second surface and be inclined relative to the second surface.

[0021] The cross-sectional shape of the corner portion on the surface perpendicular to the first and second surfaces may include a curved shape.

[0022] At least one of the first layer and the second layer can have a stacked structure.

[0023] The substrate may include flow paths for liquid flow.

[0024] An electrostatic chuck can be included on top of the insulating film on the upper surface of the substrate.

[0025] (The effect of the invention)

[0026] One embodiment of the present invention relates to a stage comprising an insulating film that improves adhesion strength and voltage resistance, thus exhibiting excellent insulation properties and reliability. Attached Figure Description

[0027] Figure 1 This is a schematic perspective view and a schematic cross-sectional view of a stage according to one embodiment of the present invention.

[0028] Figure 2This is a schematic cross-sectional view showing a portion of the steps of a platform according to one embodiment of the present invention, magnified.

[0029] Figure 3 This is a flowchart illustrating a method for manufacturing a stage according to one embodiment of the present invention.

[0030] Figure 4 A schematic perspective view is provided to illustrate the first spraying step in a method for manufacturing a stage according to one embodiment of the present invention.

[0031] Figure 5 A schematic perspective view is provided to illustrate the second spraying step in a method for manufacturing a stage according to one embodiment of the present invention.

[0032] Figure 6 A schematic perspective view is provided to illustrate the third spraying step in a method for manufacturing a stage according to one embodiment of the present invention.

[0033] Figure 7 This is a schematic cross-sectional view showing a portion of the steps of a platform according to one embodiment of the present invention, magnified.

[0034] Figure 8 This is a flowchart illustrating a method for manufacturing a stage according to one embodiment of the present invention.

[0035] Figure 9 This is a schematic cross-sectional view showing a portion of the steps of a platform according to one embodiment of the present invention, magnified.

[0036] Figure 10 This is a schematic cross-sectional view of a stage according to one embodiment of the present invention.

[0037] Figure 11 This is a schematic perspective view and a schematic cross-sectional view of a stage according to one embodiment of the present invention.

[0038] Figure 12 This is a schematic cross-sectional view of a stage according to one embodiment of the present invention.

[0039] Figure 13 This is a schematic cross-sectional view of a membrane processing apparatus having a stage according to one embodiment of the present invention. Detailed Implementation

[0040] Hereinafter, various embodiments of the invention disclosed in this application will be described with reference to the accompanying drawings. However, the present invention may be implemented in various ways without departing from its spirit and should not be construed as limited to the description of the embodiments illustrated below.

[0041] To make the description clearer, the accompanying drawings may schematically represent the width, thickness, shape, etc., of various parts compared to the actual form. However, these are merely examples and do not limit the interpretation of the invention. Furthermore, in this specification and the accompanying drawings, there are instances where the same reference numerals are used to identify elements that have the same function as elements in already described drawings, thus omitting redundant descriptions.

[0042] In this invention, when a single membrane is processed to form multiple membranes, these multiple membranes may have different functions and effects. However, these membranes originate from membranes formed as the same layer in the same process and have the same layer structure and the same material. Therefore, these multiple membranes are defined as existing in the same layer.

[0043] In this specification and the accompanying drawings, when differentiating and labeling multiple parts of a structure, there are instances where the same reference numerals are used and further hyphens and natural numbers or lowercase letters are used.

[0044] <First Implementation Method>

[0045] Reference Figures 1 to 7 This paper describes the structure of a stage 100 according to one embodiment of the present invention and a method for manufacturing the stage 100.

[0046] [1. Structure of stage 100]

[0047] Figure 1 This is a schematic perspective view and a schematic cross-sectional view of a stage 100 according to one embodiment of the present invention. Specifically, Figure 1 (A) in the figure is a schematic perspective view of the stage 100. Figure 1 (B) in the middle is along Figure 1 A schematic cross-sectional view of the stage 100 cut off by line A-A' as shown in (A).

[0048] like Figure 1 (A) and Figure 1 As shown in (B), the stage 100 has a substrate 110 and an insulating film 120. The insulating film 120 is configured to cover the upper surface 101, side surface 102, and lower surface 103 of the substrate 110. Alternatively, the insulating film 120 may be configured to cover the entire upper surface 101, the entire side surface 102, or the entire lower surface 103 of the substrate 110, or it may be provided on a portion of the upper surface 101, a portion of the side surface 102, or a portion of the lower surface 103 of the substrate 110.

[0049] The substrate 110 has a structure that connects two circular plates of different sizes. That is, the substrate 110 has a structure in which a smaller circular plate is disposed on a larger circular plate. The substrate 110 can be formed by joining two components (a large circular plate and a small circular plate) or by forming a single component. In other words, the substrate 110 includes a step 150 having a first surface 111 recessed from the upper surface 101 (or a surface extending from the upper surface 101) and a second surface 112 recessed from the side surface 102 (or a surface extending from the side surface 102). Furthermore, it can also be said that the outer periphery of the substrate 110 includes the step 150 having the first surface 111 and the second surface 112. An insulating film 120 is also disposed on the first surface 111 and the second surface 112 of the step 150.

[0050] The surfaces of the substrate 110 that extend the upper surface 101 and the second surface 112, the surfaces of the substrate 110 that extend the side surface 102 and the first surface 111, the surfaces of the substrate 110 that extend the first surface 111 and the second surface 112, and the surfaces of the substrate 110 that extend the side surface 102 and the lower surface 103 are arranged, for example, to intersect at approximately 90°, but the angle of intersection between the surfaces is not limited to this. Here, approximately 90° means around 90°, for example, above 80° and below 100°.

[0051] The corners of the upper surface 101 and the second surface 112 of the substrate 110, the corners of the side surface 102 and the first surface 111 of the substrate 110, the corners of the first surface 111 and the second surface 112, and the corners of the side surface 102 and the lower surface 103 of the substrate 110 can all be chamfered or rounded corners. That is, the first surface 111 and the second surface 112 can be connected by chamfered corners. In this case, the cross-sectional shape of the corner of the surface perpendicular to the first surface 111 and the second surface 112 has a straight shape or a curved shape. The corners of the upper surface 101 and the second surface 112 of the substrate 110, the corners of the side surface 102 and the first surface 111 of the substrate 110, and the corners of the side surface 102 and the lower surface 103 of the substrate 110 are also the same.

[0052] For example, metals or ceramics can be used as the material of the substrate 110. More specifically, titanium (Ti), aluminum (Al), or stainless steel, or oxides containing them, can be used as the material of the substrate 110.

[0053] The insulating film 120 can be made of a material that meets the desired voltage withstand characteristics and can be sprayed by a spraying method. As a material for the insulating film 120, oxides containing at least one of the following elements can be used: alkaline earth metals, rare earth metals, aluminum (Al), tantalum (Ta), and silicon (Si). More specifically, aluminum oxide (Al₂O₃) or magnesium oxide (MgO) can be used as materials for the insulating film 120.

[0054] The material used for the insulating film 120 may include inorganic insulators. For example, inorganic insulators are aluminum oxide, titanium oxide, chromium oxide, zirconium oxide, magnesium oxide or yttrium oxide, or composite oxides thereof.

[0055] Reference Figure 2 Describe the structure of step 150 in detail.

[0056] Figure 2 This is a schematic cross-sectional view showing an enlarged portion of the step 150 of the stage 100 according to one embodiment of the present invention. Specifically, Figure 2 for Figure 1 An enlarged sectional view of region B shown in (B) in the figure.

[0057] like Figure 2 As shown, in step 150, the first surface 111 and the second surface 112 are connected by a corner portion 113. The insulating film 120 on the first surface 111 includes a plurality of first layers 121. That is, stacked first layers 121-1, 121-2, ..., 121-n are provided on the first surface 111. Similarly, the insulating film 120 on the second surface 112 includes a plurality of second layers 122. That is, stacked second layers 122-1, 122-2, ..., 122-n are provided on the second surface 112. Furthermore, there is no particular limitation on the number of first layers 121 and the number of second layers 122.

[0058] In step 150, the insulating film 120 is a film continuously formed on corner 113 through contact between a plurality of first layers 121 and a plurality of second layers 122. The first layers 121-1, 121-2, ..., 121-n each have a first end portion 131-1, 131-2, ..., 131-n. Similarly, the second layers 122-1, 122-2, ..., 122-n each have a second end portion 132-1, 132-2, ..., 132-n. The first end portions 131 and second end portions 132 are alternately stacked on corner 113. Furthermore, on corner 113, the first end portion 131 is configured to convexly protrude relative to the first surface 111 and is inclined relative to the first surface 111. Similarly, at corner 113, the second end portion 132 is configured to convexly protrude relative to the second surface 112 and is inclined relative to the second surface 112. Figure 2As shown, when the corner 113 of the step 150 is rounded (i.e., when the cross-sectional shape of the corner 113 is curved), the radius of curvature of the first end 131 and the radius of curvature of the second end 132 are preferably greater than the radius of curvature of the corner 113 (the radius of the rounded corner). Here, the radius of curvature of the corner 113 is, for example, 0.1 mm or more and 10 mm or less.

[0059] On the other hand, the same applies when the corner 113 of the step 150 is chamfered (i.e., when the cross-sectional shape of the corner is straight). In this case, the radius of curvature of the first end 131 and the radius of curvature of the second end are preferably larger than the size of the chamfer of the corner 113. Here, the size of the chamfer of the corner 113 is, for example, 0.1 mm or more and 10 mm or less.

[0060] exist Figure 2 In this configuration, the first end portion 131-1 contacts the corner portion 113, and the second end portion 132-1 contacts the first end portion 131-1, but the configuration of the corner portion 113 is not limited to this. Alternatively, the second end portion 132-1 may contact the corner portion 113, and the first end portion 131-1 may contact the second end portion 132-1.

[0061] The film thickness t1 of the insulating film 120 on the first surface 111 (i.e., the film thickness of the plurality of first layers 121) and the film thickness t2 of the insulating film 120 on the second surface 112 (i.e., the film thickness of the plurality of second layers 122) are, for example, 50 μm or more and 1500 μm or less. Furthermore, the film thickness t3 of the insulating film 120 on the corner portion 113 is at least one and at least two times the film thickness t1 of the insulating film 120 on the first surface 111 and at least two times the film thickness t2 of the insulating film 120 on the second surface 112, preferably at least one and ... two and at least one and at least one and at least two and at least one and at least one and at least two and at least one and at least one and at least two and at least one and at least one and at least two and at least one and at least one and at least two and at least one and at least one and at least two and at least one and at least one and at least two and at least one and at least one and at least

[0062] The thickness of the first layer 121 and the thickness of the second layer 122 can be the same or different.

[0063] In the stage 100 of this embodiment, the film thickness t3 of the insulating film 120 on the corner 113 of the step 150 is controlled to be more than one and less than two times the film thickness t1 of the insulating film 120 on the first surface 111 and the film thickness t2 of the insulating film 120 on the second surface 112, thereby suppressing the reduction of the adhesion strength of the insulating film 120 on the corner 113. That is, the insulating film 120 on the corner 113 has the same degree of adhesion strength as the insulating film 120 on the first surface 111 and the second surface 112. Furthermore, at the step 150, the insulating film 120 has a uniform film thickness and does not have large gaps or voids. In particular, the insulating film 120 on the corner 113 has a structure in which the first end 131 of the first layer 121 and the second end 132 of the second layer 122 are alternately stacked, forming a dense film that is less likely to have large gaps or voids. Therefore, the voltage resistance of the insulating film 120 is improved. Therefore, the stage 100 involved in this embodiment includes an insulating film 120 that improves adhesion strength and voltage resistance, and has excellent insulation performance and reliability.

[0064] [2. Manufacturing method of stage 100]

[0065] Figure 3 This is a flowchart illustrating a method for manufacturing a stage 100 according to one embodiment of the present invention. Specifically, Figure 3 This is a flowchart of the spraying process, which is one of the manufacturing processes of the stage 100.

[0066] like Figure 3 As shown, the manufacturing method of the stage 100 includes a first plating step (S110) of plating the upper surface 101 of the substrate 110, a second plating step (S120) of plating the side surface 102 of the substrate 110, and a third plating step (S130) of plating the lower surface of the substrate 110. The stage 100 according to this embodiment is manufactured by repeating the first plating step (S110), the second plating step (S120), and the third plating step (S130).

[0067] The spraying method used in this specification may be, for example, local spraying or plasma spraying, or a combination of both.

[0068] Figure 4 , Figure 5 as well as Figure 6 The following is a schematic perspective view illustrating the first spray plating step (S110), the second spray plating step (S120), and the third spray plating step (S130) in a method for manufacturing a stage 100 according to one embodiment of the present invention.

[0069] In the first spraying step (S110), as Figure 4As shown, while rotating the substrate 110, the spraying machine 500 of the spraying apparatus moves unidirectionally from one end of the substrate 110 to the other along a plane substantially parallel to the upper surface 101 of the substrate 110. A first layer 121 is formed on the upper surface 101 of the substrate 110 by spraying material blown from the spraying machine 500. The distance between the upper surface 101 of the substrate 110 and the spraying machine 500 (spraying distance) is, for example, 60 mm or more and 130 mm or less. When the spraying distance is short, the energy of the spraying material adhering to the substrate 110 is high, and oxygen deficiency is easily generated when the spraying material is an oxide. Furthermore, if the irradiation distance becomes longer, it is difficult to form a dense film. Therefore, the spraying distance is preferably within the above-mentioned range. In addition, to ensure uniform film thickness of the first layer 121, it is preferable that the spraying machine 500 passes through the center of rotation of the substrate 110.

[0070] The spray plating machine 500 can also move unidirectionally from the rotation center of the substrate 110 to the other end. Furthermore, the movement of the spray plating machine 500 can be not only unidirectional but also reciprocating. Moreover, when the direction in which the spray plating machine 500 blows out the spray plating material is set as the spray plating direction, the spray plating direction can be a direction perpendicular to the upper surface 101 of the substrate 110, or a direction having a constant angle with the vertical direction. That is, when the vertical direction relative to the upper surface 101 of the substrate 110 is set to 0°, the spray plating direction can be 0° or a direction other than 0°. A spray plating direction other than 0° is, for example, greater than 0° but less than 10°. By changing the angle of the spray plating direction, the thickness of the first layer 121 formed on the upper surface 101 of the substrate 110 by a single movement of the spray plating machine 500 can be adjusted.

[0071] When the spray plating machine 500 is moved from one end of the substrate 110 to the other end, the spray plating material blown out from the spray plating machine 500 also reaches the first surface 111 of the step 150. Therefore, a first layer 121 is formed not only on the upper surface 101 of the substrate 110, but also on the first surface 111.

[0072] Next, the second spray plating step (S120) is performed. In the second spray plating step (S120), as follows: Figure 5 As shown, while rotating the substrate 110, the spray plating machine 500 moves unidirectionally from the upper end to the lower end of the substrate 110 along a plane substantially parallel to the side surface 102 of the substrate 110. A second layer 122 is formed on the side surface 102 of the substrate 110 by spray plating material blown from the spray plating machine 500. The distance between the side surface 102 of the substrate 110 and the spray plating machine 500 is preferably 60 mm or more and 130 mm or less.

[0073] The spray plating machine 500 can also move unidirectionally from the lower end to the upper end of the substrate 110. Furthermore, the movement of the spray plating machine 500 can be not only unidirectional but also reciprocating. Moreover, the spraying direction can be a direction perpendicular to the side surface 102 of the substrate 110, or a direction with a constant angle to the vertical direction. That is, when the vertical direction relative to the side surface 102 of the substrate 110 is set to 0°, the spraying direction can be 0° or a direction other than 0°. A spraying direction other than 0° is, for example, greater than 0° but less than 10°. By changing the angle of the spraying direction, the film thickness of the second layer 122 formed on the side surface 102 of the substrate 110 by a single movement of the spray plating machine 500 can be adjusted. The angle of the spraying direction in the second spraying step (S120) can be the same as or different from the angle of the spraying direction in the first spraying step (S110).

[0074] When the spray plating machine 500 is moved from the upper end to the lower end of the substrate 110, the spray plating material blown out from the spray plating machine 500 also reaches the second surface 112 of the step 150. Therefore, a second layer 122 is formed not only on the side surface 102 of the substrate 110, but also on the second surface 112.

[0075] Next, the third spray plating step (S130) is performed. In the third spray plating step (S130), as follows: Figure 6 As shown, while rotating the substrate 110, the spray plating machine 500 moves unidirectionally from one end of the substrate 110 to the other along a plane substantially parallel to the lower surface 103 of the substrate 110. A third layer 123 is formed on the lower surface 103 of the substrate 110 by spray plating material blown from the spray plating machine 500. The distance between the lower surface 103 of the substrate 110 and the spray plating machine 500 is preferably 60 mm or more and 130 mm or less.

[0076] The third layer 123 can also be formed on a portion of the lower surface 103 of the substrate 110. That is, the spray plating machine 500 can move unidirectionally from one end of a portion of the lower surface 103 to the other, rather than moving over the entire lower surface 103 of the substrate 110. Furthermore, the movement of the spray plating machine 500 can be not only unidirectional but also reciprocating. Further, the plating direction can be perpendicular to the lower surface 103 of the substrate 110 or a direction with a constant angle to the vertical direction. That is, when the vertical direction relative to the lower surface 103 of the substrate 110 is set to 0°, the plating direction can be 0° or other than 0°. A plating direction other than 0° is, for example, greater than 0° but less than 10°. By changing the angle of the plating direction, the film thickness of the second layer 122 formed on the lower surface 103 of the substrate 110 by a single movement of the spray plating machine 500 can be adjusted. The angle of the spraying direction in the third spraying step (S130) can be the same as or different from the angle of the spraying direction in the first spraying step (S110) or the second spraying step (S120).

[0077] If the first plating step (S110), the second plating step (S120), and the third plating step (S130) are defined as one cycle, the stage 100 is manufactured by repeating the cycle at least twice. In the step 150, a first layer 121 and a second layer 122 are formed in one cycle, so multiple first layers 121 and multiple second layers 122 are formed by multiple cycles.

[0078] Figure 7 This is a schematic cross-sectional view showing an enlarged portion of the step 150 of the stage 100 according to one embodiment of the present invention. Specifically, Figure 7 (A) in the equation represents the result of one cycle. Figure 1 An enlarged sectional view of step 150 in area B shown in (B) of the diagram. Figure 7 (B) in the text is equivalent to the result of two cycles. Figure 1 The enlarged sectional view of step 150 in area B shown in (B) is shown below. In addition, for convenience, the case where the corner 113 of step 150 is rounded will be described below, but the same applies to the case where the corner 113 is chamfered.

[0079] In the first spraying step (S110) of the first cycle, a first layer 121-1 is formed on the upper surface 101 and the first surface 111 of the substrate 110. Since the spraying direction of the spraying machine 500 is approximately parallel to the second surface 112, the spraying material blown out from the spraying machine 500 does not reach the second surface 112. Therefore, the first layer 121-1 is hardly formed on the second surface 112, but is selectively formed on the first surface 111. In addition, at the corner 113, the amount of spraying material blown out from the spraying machine 500 reaches from the first surface 111 to the second surface 112 is reduced. Therefore, at the corner 113, as the amount of spraying material reaches decreases, the film thickness of the first layer 121-1 decreases, forming a first end 131-1 that is convex relative to the first surface 111 and inclined relative to the first surface 111.

[0080] In the second spraying step (S120) of the first cycle, a second layer 122-1 is formed on the side 102 and the second surface 112 of the substrate 110. Since the spraying direction of the spraying machine 500 is approximately parallel to the first surface 111, the spraying material blown out from the spraying machine 500 does not reach the first surface 111. Therefore, the second layer 122-1 is hardly formed on the first surface 111, but is selectively formed on the second surface 112. In addition, at the corner 113, the amount of spraying material blown out from the spraying machine 500 reaches the first surface 111 from the second surface 112. Therefore, at the corner 113, as the amount of spraying material reaches decreases, the film thickness of the second layer 122-1 decreases, forming a second end 132-1 that is convex and inclined relative to the second surface 112. Furthermore, the second end 132-1 is formed on the first end 131-1. That is, at corner 113, the second end 132-1 overlaps with the first end 131-1.

[0081] The second cycle is similar. In the first spraying step (S110), a first layer 121-2 is selectively formed on the first surface 111, and in the second spraying step (S120), a second layer 122-2 is selectively formed on the second surface 112. As a result, through two cycles, two layers of the first layer 121 are formed on the first surface 111, and two layers of the second layer 122 are formed on the second surface 112. Furthermore, at the corner 113, a first end portion 131-2 and a second end portion 132-2 are formed through the second cycle. As a result, through two cycles, a structure is formed at the corner 113 where the first end portion 131-1, the second end portion 132-1, the first end portion 131-2, and the second end portion 132-2 are sequentially stacked.

[0082] By repeating the cycle multiple times, an insulating film 120 comprising multiple first layers 121 and multiple second layers 122 is formed on step 150. In addition, a structure in which first end 131 and second end 132 are alternately stacked is formed at the corner 113 of step 150.

[0083] The spray plating process cycle is not limited to the sequence of the first spray plating step (S110), the second spray plating step (S120), and the third spray plating step (S130). The spray plating process cycle can also be the sequence of the third spray plating step (S130), the second spray plating step (S120), and the first spray plating step (S110).

[0084] The first spray plating step (S110) and the second spray plating step (S120) include spray plating on the step 150, while the third spray plating step (S130) does not include spray plating on the step 150. Therefore, the spray plating steps can be cycled through the first spray plating step (S110) and the second spray plating step (S120). In this case, the third spray plating step (S130) can be performed separately before and after the repeated implementation of the first spray plating step (S110) and the second spray plating step (S120). In the third spray plating step (S130) which is performed separately from the cycle, the spray plating machine 500 can also be moved back and forth multiple times.

[0085] Furthermore, for the movement of the spray plating machine 500, the substrate 110 can be rotated and the spray plating machine 500 can be scanned in a zigzag pattern.

[0086] According to the manufacturing method of the stage 100 according to this embodiment, an insulating film 120 with an alternating structure of a first end 131 of a first layer 121 and a second end 132 of a second layer 122 is formed on the corner 113 of the step 150. The first end 131 and the second end 132 are formed with decreasing film thickness; therefore, the film thickness t3 of the insulating film 120 on the corner 113 can be controlled to be at least one and less than two times the film thickness t1 of the insulating film 120 on the first surface 111 and the film thickness t2 of the insulating film 120 on the second surface 112. As a result, the insulating film 120 on the corner 113 can have the same level of adhesion strength as the insulating films 120 on the first surface 111 and the second surface 112. Furthermore, since the film thickness of the insulating film 120 is uniform at the step 150, the insulating film 120 does not have large gaps. Specifically, the insulating film 120 on the corner 113 has a structure in which the first end 131 of the first layer 121 and the second end 132 of the second layer 122 are alternately stacked, forming a dense film that is less prone to large gaps or voids. Therefore, the voltage resistance of the insulating film 120 is improved. Thus, according to the manufacturing method of the stage 100 according to this embodiment, even when the substrate 110 of the stage 100 has a step 150, it is possible to form an insulating film 120 with improved adhesion strength and voltage resistance, thereby enabling the manufacture of a stage 100 with excellent insulation performance and reliability.

[0087] <Variation Example 1>

[0088] Reference Figure 8 and Figure 9 The structure of insulating film 120A, a modified example of insulating film 120 in the stage 100 of the first embodiment, will be described below. Furthermore, structures identical to those in the stage 100 of the first embodiment will be omitted from the description below.

[0089] Figure 8 This is a flowchart illustrating a method for manufacturing a stage 100 according to one embodiment of the present invention. Specifically, Figure 8 This is a flowchart of the spraying process, which is one of the manufacturing processes of the stage 100.

[0090] In reference Figure 3The manufacturing method of the stage 100 described herein illustrates an example in which the first spray plating step (S110) to the third spray plating step (S130) are performed once in one cycle, but the manufacturing method of the stage 100 is not limited to this. The first spray plating step (S110) to the third spray plating step (S130) can be performed multiple times in one cycle. Furthermore, the first spray plating step (S110) to the third spray plating step (S130) performed in one cycle can be the same number of times or different numbers of times. Depending on the distance between the substrate 110 and the spray plating machine 500 in the first spray plating step (S110) to the third spray plating step (S110), the moving speed of the spray plating machine 500, or the angle of the spraying direction, the film thickness of each layer formed in the first spray plating step (S110) to the third spray plating step may be different. In this case, the number of times the first spray plating step (S110) to the third spray plating step is performed in one cycle can also be adjusted.

[0091] For example, if the thickness of the layer formed in the first spraying step (S110) is three times the thickness of the layers formed in the second spraying step (S120) and the third spraying step (S130), then... Figure 8 As shown, the first spray plating step (S110), three second spray plating steps (S120a to S120c), and three third spray plating steps (S130a to S130c) can be performed in one cycle. Specifically, after the first spray plating step (S110), the first second spray plating step (S120a) and the third spray plating step (S130a) are performed. Then, after the second second spray plating step (S120b) and the third spray plating step (S130b), the third second spray plating step (S120c) and the third spray plating step (S130c) are performed.

[0092] Figure 9 This is a schematic cross-sectional view showing an enlarged portion of the step 150 of the stage 100 according to one embodiment of the present invention. Specifically, Figure 9 To be Figure 8 The step 150 of the stage 100 is shown as a cross-sectional view produced by repeating the spray coating process for two cycles.

[0093] like Figure 9As shown, the insulating film 120A on the first surface 111 includes multiple first layers 121A. That is, stacked first layers 121A-1 and 121A-2 are provided on the first surface 111. The insulating film 120A on the second surface 112 includes multiple second layers 122A. That is, stacked second layers 122A-1 and 122A-2 are provided on the second surface 112. In addition, the second layers 122A-1 and 122A-2 each have a stacked structure (or layered structure). Specifically, the second layer 122A-1 has a stacked structure including three layers: 122A-1a, 122A-1b, and 122A-1c, and the second layer 122A-2 has a stacked structure including three layers: 122A-2a, 122A-2b, and 122A-2c.

[0094] The first layers 121A-1 and 121A-2 are formed by the first spraying step (S110) of the first cycle and the first spraying step (S110) of the second cycle, respectively. Furthermore, at the corner 113, the amount of sprayed material blown from the spraying machine 500 reaches the corner, thus reducing the film thickness of the first layers 121A-1 and 121A-2. Therefore, at the corner 113, the first ends 131A-1 and 131A-2 are formed by the first and second cycles, respectively.

[0095] The second layer 122A-1, comprising 122A-1a, 122A-1b, and 122A-1c, is formed by the first second spray plating step (S120a), the second second spray plating step (S120b), and the third second spray plating step (S120c) in the first cycle, respectively. Furthermore, the second layer 122A-2, comprising 122A-2a, 122A-2b, and 122A-2c, is formed by the first second spray plating step (S120a), the second second spray plating step (S120b), and the third second spray plating step (S120c) in the second cycle, respectively.

[0096] Here, the formation of the layered structure of the second layer 122A will be explained. A first third spraying step (S130a) is performed after the first second spraying step (S120a), but this first third spraying step (S130a) is not a spraying process on step 150. Therefore, in the first third spraying step (S130a), no layer is formed on step 150. The second third spraying step (S130b) and the third third spraying step (S130c) are the same. Therefore, through the three second spraying steps (S120a to S120c) in the first cycle, a layered structure consisting of layers 122A-1a, 122A-1b, and 122A-1c is formed sequentially. Similarly, through the three second spraying steps (S120a to S120c) in the second cycle, a layered structure consisting of layers 122A-2a, 122A-2b, and 122A-2c is formed sequentially. On corner 113, the amount of sprayed material blown from the spraying machine 500 is reduced. Therefore, on corner 113, second ends 132A-1 and 132A-2 are formed respectively through the first cycle and the second cycle. In addition, second ends 132A-1 and 132A-2 also have a stacked structure.

[0097] The above description shows an example of the second end 132A having a laminated structure, but the insulating film 120A only needs to have a laminated structure at least one of the first end 131A and the second end 132A.

[0098] When the cycle is repeated multiple times, a structure in which the first end 131A and the second end 132A are alternately stacked is formed on the corner 113. Furthermore, by adjusting the number of the first spraying step (S110) and the second spraying step (S120) in one cycle, an insulating film 120A with uniform film thickness can be formed on the first surface 111 and the second surface 112. In addition, the film thickness of the insulating film 120A on the corner 113 can be controlled.

[0099] In this modified example, the insulating film 120A has an alternating stacked structure on the corner 113 of a first end 131A of a first layer 121A and a second end 132A of a second layer 122A. Since at least one of the first end 131A and the second end 132A has a stacked structure, it becomes a dense film, less prone to large gaps or voids. Therefore, the voltage withstand capability of the insulating film 120A is improved. Consequently, the stage 100 with the insulating film 120A exhibits excellent insulation and reliability.

[0100] <Second Implementation Method>

[0101] Reference Figure 10The structure of the stage 200 according to one embodiment of the present invention and the stage 200A as a variation thereof will be described below. Furthermore, the structures of the stage 200 and stage 200A, which are identical to those of the stage 100 of the first embodiment, will be omitted from the description below.

[0102] Figure 10 (A) and Figure 10 (B) is a schematic cross-sectional view of the stage 200 and stage 200A according to an embodiment of the present invention.

[0103] like Figure 10 As shown in (A), the stage 200 has a substrate 210 and an insulating film 220. The substrate 210 includes a first substrate 210-1 and a second substrate 210-2. The insulating film 220 is configured to cover the upper surface 201 (the upper surface 201 of the first substrate 210-1), the side surface 202 (the side surface 202 of the first substrate 210-1 and the second substrate 210-2), and the lower surface 203 (the lower surface 203 of the second substrate 210-2) of the substrate 210. Alternatively, the insulating film 220 may be configured to cover the entire surface of the upper surface 201, the entire surface of the side surface 202, or the entire surface of the lower surface 203 of the substrate 210, or it may be provided on a portion of the upper surface 201, a portion of the side surface 202, or a portion of the lower surface 203 of the substrate 210.

[0104] The substrate 210 (more specifically, the first substrate 210-1) includes a step 250 having a first surface 211 recessed from the upper surface 201 and a second surface 212 recessed from the side surface 202. An insulating film 220 is also disposed on the first surface 211 and the second surface 212 of the step 250.

[0105] The insulating film 220 is formed using the same spraying method as the insulating film 120 in the first embodiment. Therefore, an insulating film 220 with improved adhesion strength and voltage withstand capability is formed on the substrate 210. Furthermore, the structure of the step 250 of the stage 200 is the same as the structure of the step 150 of the stage 100 in the first embodiment. Therefore, the reduction in adhesion strength of the insulating film 220 at the corners of the step 250 is suppressed. In addition, at the step 250, the insulating film 220 has a uniform film thickness and does not have large gaps or voids. Therefore, the voltage withstand capability of the insulating film is improved.

[0106] An opening 260 is provided on the lower surface 203 of the substrate 210. For example, a temperature sensor such as a thermocouple can be provided in the opening 260. An insulating film 220 can be provided on the entire inner wall of the opening 260, or it can be provided on a part of the inner wall of the opening 260.

[0107] Inside the substrate 210, a groove (flow path) 262 is provided for the circulation of a medium used to control the temperature of a substrate placed on the stage 200. The medium can be water, isopropanol, alcohols such as ethylene glycol, or liquid media such as silicone oil. The groove 262 is formed on one or both of the first substrate 210-1 and the second substrate 210-2, and then the first substrate 210-1 and the second substrate 210-2 are joined by brazing or the like. The medium can be used for both cooling and heating the stage 200. This is achieved by adjusting the temperature as described later. Figure 13 The temperature controller 328 shown controls the flow of the medium in the tank 262 and can control the temperature of the stage 200.

[0108] Furthermore, the stage 200 may have a through-hole 264 penetrating the substrate 210. The number of through-holes 264 is not limited to one, but may also be multiple. For example, they may be described later. Figure 13 A gas inlet pipe is provided in the chamber 302 shown, allowing gas supplied from the gas inlet pipe to flow through the through-hole 264. By allowing a gas with high thermal conductivity, such as helium, to flow through the through-hole 264, the gas can flow in the gap between the stage 200 and the substrate, and the heat energy of the stage 200 can be efficiently transferred to the substrate. The insulating film 220 can be provided on the entire inner wall of the through-hole 264, or it can be provided on a portion of the inner wall of the through-hole 264.

[0109] Figure 10 The stage 200A shown in (B) also includes an electrostatic chuck 270, which serves as a unit for fixing a substrate onto the stage 200A. The electrostatic chuck 270 can be, for example, a structure in which an insulating film 274 covers the electrostatic chuck electrodes 272. By applying a high voltage (hundreds to thousands of V) to the electrostatic chuck electrodes 272, the substrate can be fixed using the Coulomb force between the charge generated on the electrostatic chuck electrodes 272 and the charge generated on the back of the substrate, which has the opposite polarity to the charge generated on the electrostatic chuck electrodes 272. As the insulator of the insulating film 274, ceramics such as alumina, aluminum nitride, or boron nitride can be used, for example. Furthermore, the insulating film 274 does not need to be completely insulating, but can have a certain degree of conductivity (e.g., 10). 9 Ω·cm to 10 12 (Resistivity on the order of Ω·cm). In this case, a metal oxide such as titanium oxide, zirconium oxide, or hafnium oxide can be added to the ceramic. Ribs 276 for determining the position of the substrate can be provided around the electrostatic chuck 270.

[0110] The bonding between the electrostatic chuck 270 and the insulating film 220 on the upper surface of the substrate 210 can be achieved, for example, by welding, screw fixing, or brazing. As the brazing filler metal, alloys containing silver, copper, and zinc, alloys containing copper and zinc, copper and aluminum containing trace amounts of phosphorus and their alloys, alloys containing titanium, copper, and nickel, alloys containing titanium, zirconium, and copper, or alloys containing titanium, zirconium, copper, and nickel, etc., can be used.

[0111] In the stage 200 or stage 200A according to this embodiment, the decrease in the adhesion strength of the insulating film 220 at the corner of the step 250 is suppressed, and the adhesion strength of the insulating film 220 is improved. Furthermore, at the step 250, the insulating film 220 has a uniform film thickness and does not have large gaps or voids, thus improving the voltage withstand capability of the insulating film 220. Therefore, the stage 200 or stage 200A according to this embodiment includes an insulating film 220 with improved adhesion strength and voltage withstand capability, and has excellent insulation performance and reliability.

[0112] <Variation Example 2>

[0113] Reference Figure 11 as well as Figure 12 The following describes stage 200B and stage 200C, which are another variation of the stage 200 according to one embodiment of the present invention. Furthermore, the structures of stage 200B and stage 200C, which have the same structure as the stage 200 or stage 200A of the second embodiment described above, will be omitted from the following description.

[0114] Figure 11 This is a schematic perspective view and a cross-sectional view of the stage 200B according to one embodiment of the present invention. Specifically, Figure 11 (A) in the diagram is a schematic perspective view of the stage 200B, while Figure 11 (B) in the middle is along Figure 11 A schematic cross-sectional view of the stage 200B cut off by line C-C' as shown in (A).

[0115] like Figure 11 (A) and Figure 11 As shown in (B), the stage 200B includes a substrate 210, an insulating film 220, and a heater layer 280. In other words, the structure of the stage 200B differs from that of the stage 200 in that it includes a heater layer 280. The heater layer 280 is disposed on the insulating film 220 disposed on the upper surface 201 of the substrate 210.

[0116] In stage 200B, the temperature is adjusted by the method described later. Figure 13The temperature controller 328 shown controls the flow of a medium in tank 262, which can control the temperature of stage 200B. However, temperature control based on a liquid medium has a slow response and is difficult to achieve precise temperature control. Therefore, it is preferable to use a medium to coarsely control the temperature of stage 200B, and to use heater lines 284 in heater layer 280 to precisely control the temperature of the substrate. This allows for both precise temperature control and high-speed temperature adjustment of stage 200B.

[0117] The heater layer 280 comprises three layers. Specifically, the heater layer 280 includes a first insulating film 282, heater wires 284 on the first insulating film 282, and a second insulating film 286 on the heater wires 284. The heater wires 284 are electrically insulated by the first insulating film 282 and the second insulating film 286. One heater wire 284 or multiple heater wires 284 can be disposed within the heater layer 280. When multiple heater wires 284 are disposed in the heater layer 280, each of the multiple heater wires 284 can be provided with a design described later. Figure 13 The heater power supply 330 shown is independently controlled. The heater line 284 is heated by electricity supplied from the heater power supply 330, thereby controlling the temperature of the stage 200B.

[0118] The first insulating film 282 and the second insulating film 286 may comprise inorganic insulators. Inorganic insulators have been described in the first embodiment, and therefore their description is omitted here. Furthermore, the first insulating film 282 and the second insulating film 286 may be formed by a spraying method. The spraying method has been described in the first embodiment, and therefore its description is omitted here.

[0119] The heater wire 284 may include a metal that generates heat when energized. Specifically, the heater wire 284 may contain a metal selected from tungsten, nickel, chromium, cobalt, and molybdenum. The metal may be an alloy containing these metals, such as an alloy containing nickel and chromium, or an alloy containing nickel, chromium, and cobalt.

[0120] Regarding the heater line 284, it is preferable to process it individually by etching a metal film or metal foil formed using methods such as sputtering, metal-organic CVD (MOCVD), vapor deposition, printing, or electroplating, and then deposit it onto the first insulating film 282. This is because when the heater line 284 is formed using a sputtering method, it is difficult to ensure that the entire heater line 284 has uniform density, thickness, and width, while processing it by etching a metal film or metal foil can produce a heater line 284 with smaller deviations in these physical parameters. This allows for precise control of the stage 200B's temperature and reduces temperature distribution.

[0121] Furthermore, since the aforementioned alloy has a higher volume resistivity compared to metal monomers, the thickness of the heater wires 284 can be increased when the layout, i.e., the planar shape, is the same, compared to using metal monomers. Therefore, the thickness variation of the heater wires 284 can be reduced, and a smaller temperature distribution can be achieved.

[0122] Figure 12 This is a schematic cross-sectional view of a stage 200C according to one embodiment of the present invention. Figure 12 The stage 200C shown also includes an electrostatic chuck 270, which serves as a unit for fixing a substrate onto the stage 200C. Since the electrostatic chuck 270 has the same structure as described above, its description is omitted.

[0123] Even in the stage 200B or stage 200C involved in this modification, the reduction in the adhesion strength of the insulating film 220 at the corner of the step 250 is suppressed, and the adhesion strength of the insulating film 220 is improved. Furthermore, at the step 250, the insulating film 220 has a uniform film thickness and does not have large gaps or voids, thus improving the voltage withstand capability of the insulating film 220. Therefore, the stage 200B or stage 200C involved in this embodiment includes an insulating film 220 with improved adhesion strength and voltage withstand capability, and has excellent insulation performance and reliability.

[0124] <Third Implementation Method>

[0125] Reference Figure 13 The following describes the structure of a membrane processing apparatus 300 according to one embodiment of the present invention. The membrane processing apparatus 300 includes a stage 100. Therefore, the following description of the structure of the stage 100 of the first embodiment will be omitted.

[0126] Figure 13 This is a schematic cross-sectional view of a film processing apparatus 300 according to one embodiment of the present invention. The film processing apparatus 300 is a so-called etching apparatus, but the film processing apparatus 300 is not limited thereto.

[0127] The film processing apparatus 300 is capable of dry etching various films. The film processing apparatus 300 has a chamber 302. The chamber 302 provides space for etching films such as conductors, insulators, or semiconductors formed on a substrate.

[0128] An exhaust device 304 is connected to chamber 302, thereby enabling the interior of chamber 302 to be set to a reduced-pressure atmosphere. Further, an inlet pipe 306 for introducing reaction gases is provided within chamber 302; the reaction gases used for etching are introduced into the chamber via valve 308. The reaction gases include fluorinated organic compounds, such as carbon tetrafluoride (CF4), octafluorocyclobutane (c-C4F8), and perfluorocyclopentane (c-C5F8). 10 (e.g., hexafluorobutadiene, or C4F6).

[0129] A microwave source 312 can be disposed in the upper part of the cavity 302 via a waveguide 310. The microwave source 312 includes an antenna for supplying microwaves and outputs high-frequency microwaves such as 2.45 GHz or 13.56 MHz radio frequency (RF). The microwaves generated by the microwave source 312 propagate to the upper part of the cavity 302 via the waveguide 310 and are introduced into the cavity 302 through a window 314, which may contain quartz, ceramic, or the like. The microwaves are used to plasmaize the reactive gas, and the electrons, ions, and free radicals contained in the plasma are used to etch the film.

[0130] A stage 100 for mounting the substrate is disposed in the lower part of the chamber 302. A power supply 324 is connected to the stage 100, applying a voltage equivalent to high-frequency power to the stage 100 and forming an electric field generated by microwaves in a direction perpendicular to the surface of the stage 100 and the surface of the substrate. Magnets 316, 318, and 320 may be further disposed in the upper or side part of the chamber 302. Magnets 316, 318, and 320 may be permanent magnets or electromagnets with electromagnetic coils. By means of magnets 316, 318, and 320, a magnetic field component parallel to the surface of the stage 100 and the substrate is generated. Under the coordination of the electric field generated by microwaves, electrons in the plasma resonate due to the Lorentz force and are bound to the surface of the stage 100 and the substrate. As a result, a high-density plasma can be generated on the surface of the substrate.

[0131] For example, when the stage 100 has a sheath heater, a heater power supply 330 for controlling the sheath heater is connected. As an arbitrary configuration, the stage 100 may also be connected to a power supply 326 for fixing the substrate to the stage 100 for an electrostatic chuck, a temperature controller 328 for controlling the temperature of the medium circulating inside the stage 100, and a rotation control device (not shown) for rotating the stage 100.

[0132] The film processing apparatus 300 according to this embodiment includes a stage 100. By using the stage 100, the substrate can be heated uniformly and the heating temperature can be precisely controlled. Furthermore, by using the stage 100, which has excellent insulation properties, the withstand voltage to voltages applied to the substrate is improved. Therefore, by using the film processing apparatus 300, contacts with a high aspect ratio or films with a high aspect ratio can be formed. Thus, various films disposed on the substrate can be uniformly etched using the film processing apparatus 300. Furthermore, by using the highly reliable stage 100, the maintenance frequency of the film processing apparatus 300 can be reduced.

[0133] The embodiments described above, which are implementations of the present invention, can be appropriately combined and implemented as long as they do not contradict each other. Furthermore, appropriate additions, deletions, or design changes made by those skilled in the art based on the various embodiments, as long as they capture the essence of the present invention, are also included within the scope of the present invention.

[0134] Furthermore, even if the effects are different from those produced by the embodiments described above, effects that are obvious from the description of this specification or that can be easily predicted by those skilled in the art should be understood as effects produced by the present invention.

[0135] (Explanation of reference numerals in the attached diagram)

[0136] 100: Stage; 101: Top surface; 102: Side surface; 103: Bottom surface;

[0137] 110: Substrate; 111: First surface; 112: Second surface; 113: Corner;

[0138] 120, 120A: Insulating film;

[0139] 121, 121-1, 121-2, 121-n, 121A, 121A-1, 121A-2: First layer;

[0140] 122, 122-1, 122-2, 122-n, 122A, 122A-1, 122A-2: Second layer; 123: Third layer;

[0141] 131, 131-1, 131-2, 131-n, 131A, 131A-1, 131A-2: First end;

[0142] 132, 132-1, 132-2, 132-n, 132A, 132A-1, 132A-2: Second end;

[0143] 150: Step; 200, 200A, 200B, 200C: Stage; 201: Upper surface;

[0144] 202: Side surface; 203: Lower surface; 210: Substrate; 210-1: First substrate;

[0145] 210-2: Second substrate; 211: First surface; 212: Second surface; 220: Insulating film; 250: Step;

[0146] 260: Opening; 262: Slot; 264: Through hole; 270: Electrostatic chuck; 272: Electrostatic chuck electrode;

[0147] 274: Membrane; 276: Rib; 280: Heater layer; 282: First insulating film;

[0148] 284: Heater wire; 286: Second insulating film; 300: Film processing device;

[0149] 302: Chamber; 304: Exhaust device; 306: Inlet tube; 308: Valve;

[0150] 310: Waveguide; 312: Microwave source; 314: Window; 316, 318, 320: Magnet;

[0151] 324, 326: Power supply; 328: Temperature controller; 330: Heater power supply; 500: Spray plating machine.

Claims

1. A stage, wherein, include: The substrate has a step including a first surface recessed from the top and a second surface recessed from the side; as well as An insulating film comprising a plurality of first layers disposed on the first surface and a plurality of second layers disposed on the second surface. In the step, the first end of the first layer and the second end of the second layer are alternately stacked.

2. The stage according to claim 1, wherein, The first surface and the second surface are connected by a corner. The first end and the second end are alternately stacked on the corner portion.

3. The stage according to claim 2, wherein, The thickness of the insulating film at the corner is more than 1 and less than 2 times the thickness of the insulating film on the first surface and the thickness of the insulating film on the second surface, respectively.

4. The stage according to claim 2, wherein, The first end is configured to convexly protrude relative to the first surface and be inclined relative to the first surface.

5. The stage according to claim 4, wherein, The second end is configured to convexly protrude relative to the second surface and be inclined relative to the second surface.

6. The stage according to claim 2, wherein, The cross-sectional shape of the corner portion on the surface perpendicular to the first and second surfaces includes a curved shape.

7. The stage according to claim 1, wherein, At least one of the first layer and the second layer has a stacked structure.

8. The stage according to any one of claims 1 to 7, wherein, The substrate includes flow paths for liquid flow.

9. The stage according to any one of claims 1 to 7, wherein, An electrostatic chuck is included on the insulating film on the upper surface of the substrate.

10. A method for manufacturing a stage, wherein, The process involves at least two cycles, each cycle comprising: moving the spray plating machine along a surface substantially parallel to the upper surface of the substrate while forming a first layer on a first surface recessed from the upper surface by spray plating from the spray plating machine; and moving the spray plating machine along a surface substantially parallel to the side surface of the substrate while forming a second layer on a second surface recessed from the side surface by spray plating from the spray plating machine. An insulating film is formed on the steps of the first and second surfaces of the substrate by alternating layers of the first end of the first layer and the second end of the second layer.

11. The method for manufacturing a stage according to claim 10, wherein, The cycle also includes the step of moving the spraying machine along a plane substantially parallel to the lower surface of the substrate while forming a third layer on the lower surface by spraying from the spraying machine.

12. The method for manufacturing a stage according to claim 10, wherein, Independent of the cycle, while moving the spraying machine along a plane substantially parallel to the lower surface of the substrate, a third layer is formed on the lower surface by spraying from the spraying machine.

13. The method for manufacturing a stage according to claim 10, wherein, In the loop, at least one of the steps for forming the first layer and forming the second layer is performed multiple times.

14. The method for manufacturing a stage according to claim 10, wherein, In at least one of the steps of forming the first layer and forming the second layer, the spraying machine performs spraying by moving only in one direction.

15. The method for manufacturing a stage according to claim 10, wherein, In at least one of the steps of forming the first layer and forming the second layer, the spraying machine performs spraying by moving in a zigzag pattern.

16. The method for manufacturing a stage according to claim 10, wherein, The first surface and the second surface are connected by a corner. An insulating film is formed on the corner portion by alternating layers of the first end and the second end.

17. The method for manufacturing a stage according to claim 16, wherein, The thickness of the insulating film at the corner is more than 1 and less than 2 times the thickness of the insulating film on the first surface and the thickness of the insulating film on the second surface, respectively.

18. The method for manufacturing a stage according to claim 16, wherein, The first end is configured to convexly protrude relative to the first surface and be inclined relative to the first surface.

19. The method for manufacturing a stage according to claim 18, wherein, The second end is configured to convexly protrude relative to the second surface and be inclined relative to the second surface.

20. The method for manufacturing a stage according to claim 16, wherein, The cross-sectional shape of the corner portion on the surface perpendicular to the first and second surfaces includes a curved shape.

21. The method for manufacturing a stage according to any one of claims 10 to 20, wherein, The substrate includes flow paths for liquid flow.

22. The method of manufacturing a stage according to any one of claims 10 to 20, wherein, An electrostatic chuck is disposed on the insulating film on the upper surface of the substrate.

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