A method for homogenizing the ablation of single crystal diamond

Abstract

The present invention belongs to the field of ultra-precision machining, and discloses a method for homogenizing the ablation of single-crystal diamond. The specific steps of the method include: ion plating a metal film with a specific thickness on the surface of the cleaned single-crystal diamond; using a nanosecond pulsed laser to ablate the metal film. When the metal film is completely ablated, continue the ablation until a graphite layer is formed on the single-crystal diamond. The present invention can form a uniform graphite layer on the surface of the single-crystal diamond by plating a metal film on the diamond surface and using a nanosecond pulsed laser with appropriate energy to ablate the single-crystal diamond, thereby realizing the uniform laser ablation of the single-crystal diamond.

Description

Technical Field

[0001] The present invention belongs to the technical field of ultra-precision machining, and more specifically, relates to a method for homogenizing the ablation of single-crystal diamond. Background Art

[0002] Diamond has an excellent combination of mechanical, optical, electronic, and thermal properties, such as a large bandgap, high electron mobility, wide transmission spectrum, high chemical stability, excellent wear resistance, high thermal conductivity (2×103W / (m·K)), low friction coefficient (0.08 - 0.1), and the highest hardness (100GPa) among known materials. Therefore, diamond is widely used in cutting and grinding tools in the machining industry, heat sink wafers in power devices, and optical lenses in high-power lasers, etc. For these applications, appropriate surface microstructures can significantly improve their performance. For example, manufacturing efficient heat dissipation microchannels in diamond can greatly improve its heat dissipation performance. Due to the ultra-high hardness and good chemical stability of diamond, it is very difficult to fabricate microstructures on diamond by mechanical micro-machining (such as cutting or grinding).

[0003] Laser processing has the advantages of a small processing area, high processing efficiency and precision, and easy control, so it is widely used in the microstructural processing of diamond. However, when the most mature nanosecond pulsed laser on the market directly ablates diamond at present, non-uniform ablation will occur, where some areas are not ablated and some areas have cracks, which will seriously affect the quality of the microstructures processed by pulsed laser on diamond. Patent document CN113681168A discloses a method of spraying an oxide composed of a mixture of ZrO, Al2O3, ZnO, and MgO on the surface of a polycrystalline diamond film. This kind of oxide can increase the laser absorption rate from 10% - 20% to 90%, thereby realizing the uniform ablation processing of the surface of the diamond film by pulsed laser. However, the disadvantages of this method are as follows: (1) The process of mixing metal oxide micropowders is troublesome and needs to be mixed according to a certain mass ratio. The processing time of the metal oxide coating is long. After one-time spraying, it takes at least 13 hours to solidify into a film, and the coating thickness is 20μm - 40μm, with a small section. After each solidification, the coating thickness needs to be measured, and multiple spraying - solidification processes are required to control the total coating thickness within 40um, with a very long time cycle and high requirements for spraying accuracy; (2) The particle size of the oxide micropowder is 1μm - 10μm, and dust pollution may be generated during the spraying process. The cross-linking agent divinylbenzene (DVB) used is a toxic substance; (3) The laser ablation time is long. After 50w laser ablates for 5min, ablation of the coating appears, but the surface is intact and does not fall off. It needs to continue ablating for 20min, and the ablation degree deepens to obtain a relatively uniform graphitized surface layer, which needs to be polished and removed. Therefore, there is an urgent need to develop a method for uniformly ablating diamond using a nanosecond pulsed laser with high efficiency, simple operation, and no safety pollution. Summary of the Invention

[0004] Aiming at the defects of the prior art, the purpose of the present invention is to provide a method for uniformly ablating single-crystal diamond, so as to solve the problems that the ablation area on the surface of the diamond ablated by the existing single-crystal diamond ablation method is uneven, and the ablated diamond may crack due to uncertain doping defects of the diamond.

[0005] To achieve the above purpose, the present invention provides a method for uniformly ablating single-crystal diamond, including the steps:

[0006] S1. Ion-plate a metal film with a specific thickness on the surface of the cleaned single-crystal diamond;

[0007] S2. Use a nanosecond pulsed laser to ablate the metal film. When the metal film is completely ablated, continue to ablate until a graphite layer is formed on the single-crystal diamond.

[0008] Further, the metal film contains one metal element.

[0009] Further, the metal film contains multiple metal elements.

[0010] Further, the metal film contains any one of the metal elements Pt, Cu, Al, Ni or Ti.

[0011] Further, the metal film contains at least two of the metal elements Pt, Cu, Al, Ni or Ti.

[0012] Further, the thickness of the metal film is 20nm - 200nm; preferably, the thickness of the metal film is 50nm - 150nm; more preferably, the thickness of the metal film is 60nm - 100nm.

[0013] Further, in step S3, the processing parameters of the nanosecond pulsed laser are: the laser power is set to 9W - 20W, the repetition frequency is set to 80kHz - 120kHz, the laser scanning speed is set to 500mm / s - 700mm / s, and the spot size is set to 10μm - 15μm.

[0014] Further, in step S3, the laser power is set to 9W - 17W, the repetition frequency is set to 100kHz, the laser scanning speed is set to 600mm / s, and the spot size is set to 12μm.

[0015] Further, in step S3, the wavelength of the nanosecond pulsed laser is preferably 355nm, 532nm or 1064nm.

[0016] Further, in step S2, the metal thin film is deposited by magnetron sputtering vacuum coating technology.

[0017] Through the above technical solution conceived by the present invention, compared with the prior art, it mainly has the following advantages:

[0018] 1. In the present invention, a metal film is deposited on the surface of single-crystal diamond, and nanosecond pulsed laser is used to ablate the metal film. During the pulsed laser ablation process, the metal thin film will experience the processes of melting and vaporization. Before the metal thin film is ablated, the interface temperature between the diamond and the metal thin film will reach the boiling point of the metal material, that is, greater than 1000 °C, which is much higher than the graphitization temperature of single-crystal diamond in the atmospheric environment, 700 °C. Therefore, a uniformly ablated graphite layer will finally be formed in the interface area between the single-crystal diamond and the metal thin film under ablation. Compared with the method of directly ablating without a metal thin film, the method of the present invention is easy to operate, the ablation process is more controllable, the obtained graphite layer has no defects such as cracks and breakage, the actual ablation area is complete, and the processing effect is good.

[0019] 2. The metal film deposited on the surface of single-crystal diamond in the present invention can be a metal film of a single component or a metal film made by mixing any several metal elements. There are many types of metal choices, and the metals used for coating are non-toxic materials, and no dust pollution will be generated during the coating process; in addition, the thermal conductivity of the metal film can be adjusted by the combination of different metals. Since the reflectivity of the metal is very high and its absorptivity is below 10%, the deposited metal film will not increase the absorptivity of single-crystal diamond to pulsed laser; furthermore, the metal film has good thermal conductivity, can conduct and disperse the heat of laser ablation in time, and induce graphitization on the surface of single-crystal diamond through uniform high temperature. The temperature of the molten metal film is uniform, and can induce a graphite layer with uniform texture and no cracks on the surface of single-crystal diamond.

[0020] 3. The laser ablation power of the present invention is set to 9W - 20W, the repetition frequency is set to 80kHz - 120kHz, the laser scanning speed is set to 500mm / s - 700mm / s, and the spot size is set to 10μm - 15μm. Within the above parameter range, for the coating thickness section of the present invention, that is, a thickness of 20nm - 200nm can meet the ablation requirements, and only one coating is required, without repeated coating and repeated measurement of the metal film thickness, greatly improving the processing efficiency; and the temperature of the molten metal film is sufficient to induce graphitization on the surface of single-crystal diamond. Under the continuous laser ablation state, the molten metal film continuously conducts heat, enabling the graphite layer on the surface of single-crystal diamond to penetrate from the surface to the inside, and can also achieve the effect of uniform ablation and complete ablation area.

[0021] 4. In the present invention, magnetron sputtering vacuum coating machines are used for coating. The coating speed of the same metal or coatings of different metal types is very fast. The time required for single-metal coating can be controlled within 10 min - 40 min, and the thickness of the metal thin film is relatively thin. The subsequent laser ablation processing speed is also very fast. Usually, one pass of laser scanning can meet the ablation requirements, and the ablation time in general ablation areas is in the millisecond to second level. Therefore, compared with the existing ablation methods, the ablation efficiency is greatly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic operation diagram of nanosecond laser processing of single-crystal diamond provided by an embodiment of the present invention;

[0023] Figure 2 a is a schematic structural diagram of a microgroove ablated by lasers with different powers on diamond without a metal thin film provided by an embodiment of the present invention;

[0024] Figure 2 b is a schematic structural diagram of a microgroove ablated by lasers with different powers on diamond coated with a metal thin film Ti provided by an embodiment of the present invention;

[0025] Figure 2 c is a schematic structural diagram of a microgroove ablated by a 9W laser on diamond coated with metal thin films Cu, Al, Ni, and Pt respectively provided by an embodiment of the present invention;

[0026] Figure 3 is a schematic path diagram of a nanosecond laser filling a circular surface with a diameter of 0.6 mm provided by an embodiment of the present invention;

[0027] Figure 4 a is a schematic structural diagram, SWLI image, and cross-sectional dimension diagram of a circular surface ablated by a 4W laser on diamond without a metal thin film provided by an embodiment of the present invention;

[0028] Figure 4 b is a schematic structural diagram, SWLI image, and cross-sectional dimension diagram of a circular surface ablated by a 9W laser on diamond without a metal thin film provided by an embodiment of the present invention;

[0029] Figure 4 c is a schematic structural diagram, SWLI image, and cross-sectional dimension diagram of a circular surface ablated by a 17W laser on diamond without a metal thin film provided by an embodiment of the present invention;

[0030] Figure 5 a is a schematic structural diagram, SWLI image, and cross-sectional dimension diagram of a circular surface ablated by a 4W laser on diamond coated with a metal thin film Ti provided by an embodiment of the present invention;

[0031] Figure 5b is a schematic diagram of the structure, an SWLI image, and a schematic diagram of the cross-sectional dimensions of a circular surface ablated by a 9W laser provided in an embodiment of the present invention on diamond coated with a metal thin film Ti;

[0032] Figure 5 c is a schematic diagram of the structure, an SWLI image, and a schematic diagram of the cross-sectional dimensions of a circular surface ablated by a 17W laser provided in an embodiment of the present invention on diamond coated with a metal thin film Ti;

[0033] Figure 6 a is a schematic diagram of the structure, an SWLI image, and a schematic diagram of the cross-sectional dimensions of a circular surface ablated by a 9W laser provided in an embodiment of the present invention on diamond coated with a Cu thin film;

[0034] Figure 6 b is a schematic diagram of the structure, an SWLI image, and a schematic diagram of the cross-sectional dimensions of a circular surface ablated by a 9W laser provided in an embodiment of the present invention on diamond coated with an Al thin film;

[0035] Figure 6 c is a schematic diagram of the structure, an SWLI image, and a schematic diagram of the cross-sectional dimensions of a circular surface ablated by a 9W laser provided in an embodiment of the present invention on diamond coated with an Ni thin film;

[0036] Figure 6 d is a schematic diagram of the structure, an SWLI image, and a schematic diagram of the cross-sectional dimensions of a circular surface ablated by a 9W laser provided in an embodiment of the present invention on diamond coated with a Pt thin film.

[0037] In the figure: 1 - nanosecond laser, 2 - metal thin film, 3 - single crystal diamond, 4 - stage. Detailed implementation manners

[0038] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0039] The present invention provides a method for homogenously ablating single crystal diamond, including the steps of:

[0040] S1. Clean the surface of the single crystal diamond, for example, clean the single crystal diamond with a cleaning solution such as an ethanol solution and dry it to enhance the bonding force between the metal thin film and the single crystal diamond; ion plate a metal thin film with a specific thickness on the surface of the cleaned single crystal diamond;

[0041] S2. Ablate the metal thin film with a nanosecond pulsed laser. After the metal thin film is completely ablated, continue the ablation. The metal thin film is in a molten state and can continuously conduct heat to the single-crystal diamond until a graphite layer is formed on the surface layer of the single-crystal diamond in contact with the metal thin film.

[0042] In a preferred embodiment, the metal thin film contains or contains multiple metal elements.

[0043] In a preferred embodiment, the aforementioned metal thin film contains any one of the metal elements Pt, Cu, Al, Ni, or Ti. Metal thin films such as Pt, Cu, Al, N, Ti plated on diamond can uniformly absorb laser of a specific wavelength and achieve laser ablation. During the process of ablation of the metal thin films such as Pt, Cu, Al, Ni, Ti by the nanosecond pulsed laser, the metal thin film will undergo the processes of melting and vaporization, which means that before the metal thin film is ablated, the temperature at the contact interface between the metal thin film and the single-crystal diamond will reach the boiling point of the metal material, and this temperature is greater than 1000 °C, far higher than the graphitization temperature of 700 °C of the single-crystal diamond in the atmospheric environment. Finally, a graphite layer is formed in the area of the single-crystal diamond in contact with the metal thin film.

[0044] In a preferred embodiment, the aforementioned metal thin film can also contain at least two of the metal elements Pt, Cu, Al, Ni, or Ti. For example, the metal thin film contains two metal elements Pt and Cu, or contains three metal elements Cu, Al, and Ni.

[0045] In a preferred embodiment, the thickness of the metal thin film is 20 nm - 200 nm; preferably, the thickness of the metal thin film is 50 nm - 150 nm; more preferably, the thickness of the metal thin film is 60 nm - 100 nm. A metal thin film with a suitable thickness can provide a uniform ablation temperature that meets the requirements for graphitization on the surface of the single-crystal diamond.

[0046] In a preferred embodiment, in step S3, the processing parameters of the nanosecond pulsed laser are: the laser power is set to 9 W - 20 W, the repetition frequency is set to 80 kHz - 120 kHz, the laser scanning speed is set to 500 mm / s - 700 mm / s, and the spot size is set to 10 μm - 15 μm.

[0047] In a preferred embodiment, in step S3, the laser power is set to 9 W - 17 W, the repetition frequency is set to 100 kHz, the laser scanning speed is set to 600 mm / s, and the spot size is set to 12 μm, which can achieve a better ablation effect.

[0048] In a preferred embodiment, in step S3, the wavelength of the nanosecond pulsed laser is preferably 355 nm, 532 nm, or 1064 nm, and all kinds of metals can uniformly absorb the laser of these three wavelengths to achieve laser ablation.

[0049] In a preferred embodiment, in step S2, a magnetron sputtering vacuum coating technology is used to deposit a metal thin film. When using the magnetron sputtering vacuum coating technology for coating, the materials that can be made into targets are extensive. Almost all metals or alloys can be made into target materials. Moreover, by precisely controlling the sputtering coating process, a uniform and high-precision film thickness can be obtained. In addition, the installation of the sputtering target is not restricted, which is suitable for the multi-target layout design of a large-volume coating chamber. And the sputtering coating has the characteristics of fast coating speed, dense film layer, and good adhesion, which is very suitable for large-scale and high-efficiency industrial production.

[0050] To more clearly illustrate the inventive concept of the present invention, the foregoing method provided by the present invention will be described in detail below in conjunction with embodiments. However, the following embodiments should not be construed as limiting the protection scope of the present invention.

[0051] Embodiment 1

[0052] Combined with Figure 1 the operation schematic diagram of nanosecond laser processing of single-crystal diamond, this embodiment takes the nanosecond pulsed laser with a wavelength of 532nm ablating single-crystal diamond as an example to illustrate the present invention. The single-crystal diamond 3 coated with the metal thin film 2 is placed on the stage 4, and ablated with the nanosecond laser 1.

[0053] As Figure 2 shown in a-2c, it is a variety of processing ablation situations for marking line segments and microgrooves on single-crystal diamond. Among them, Figure 2 a is a schematic structural diagram of the microgrooves with the same size ablated by lasers with different powers (4W, 9W, and 17W) provided in this embodiment on diamond without a metal thin film. Figure 2 b is a schematic structural diagram of the microgrooves with the same size ablated by lasers with different powers (4W, 9W, and 17W) provided in this embodiment on diamond coated with the metal thin film Ti. Figure 2 c is a schematic structural diagram of the microgrooves with the same size ablated by the 9W power laser provided in this embodiment on single-crystal diamond coated with metal thin films Cu, Al, Ni, and Pt respectively.

[0054] In this embodiment, when coating the diamond surface, a magnetron sputtering vacuum coater is used for coating. When using the magnetron sputtering vacuum coater for coating, the coating time for different metal types can be controlled within 10 min - 40 min, and the coating thickness range is wide. Currently, requirements can be met for 20nm - 200nm. Since the corresponding coating thickness range is very wide, coating once is sufficient, and it is relatively easy to meet the production requirements.

[0055] Figure 2 In a-2c, the length of the marked line segment and microgroove is 600μm, and the specific ablation processing parameters in the three figures are the same, as shown in Table 1 below:

[0056] Table 1 Laser Ablation Processing Microgroove Parameter Table

[0057]

[0058] By comparing Figure 2 a and Figure 2 b, it is found that when directly ablating single-crystal diamond with a laser power of 4W, there is no ablation on the surface of single-crystal diamond; at a laser power of 9W, there are some areas on the surface of the single-crystal diamond without a film that are not ablated, while for the diamond coated with a Ti metal film, it is completely ablated at a power of 9W, and there are no cracks in the ablation area; at a laser power of 17W, cracks appear in the ablation area on the surface of the single-crystal diamond without a film, while for the diamond coated with a Ti metal film, it is still completely ablated at a power of 17W and no cracks are generated, indicating that the single-crystal diamond coated with a metal Ti film can produce a more complete and uniform ablation area after ablation.

[0059] Figure 2 c shows that other metal films are respectively coated on the surface of single-crystal diamond, namely Cu, Al, Ni, and Pt metal films. The four coated diamonds are ablated with the same 9W laser power, and each single-crystal diamond can achieve crack-free and high-quality ablation of the microgroove surface.

[0060] From the above analysis, it can be seen that when using lasers with different powers to process single-crystal diamond with the same structure, a laser power of 9W and above is the most suitable ablation power. Below this power, it is difficult to achieve ablation; in addition, at the same laser processing power, the ablation quality of single-crystal diamond coated with a metal film is better than that of single-crystal diamond without a metal film, and the ablation quality of single-crystal diamond has little to do with the type of metal film coated.

[0061] Example 2

[0062] To better illustrate that the method of the present invention can ablate single-crystal diamond more uniformly, in this example, a nanosecond laser is used to fill a circular surface with a diameter of 0.6mm. The specific laser processing parameters are shown in Table 2 below:

[0063] Table 2 Laser Ablation Processing Circular Surface Parameter Table

[0064]

[0065] A. Ablating a circular surface on a single-crystal diamond without any coating

[0066] Scanning is carried out according to the Figure 3 shown laser scanning path, and the laser scans every 6μm, as Figure 4As shown in a-4c, when ablating a circular surface on a single-crystal diamond without any film deposition, as the laser power gradually increases from 4W (a), 9W (b), to 17W (c), similar to the case of directly filling and ablating single-crystal diamond with laser and directly ablating and marking the microgrooves of the line segment in Example 1, in each power corresponding ablation area, there will be a small part of the area that is not ablated, and cracks or breakage will occur in the ablation area; according to the corresponding Scanning White Light Interferometer (SWLI) pictures in each figure (the middle pictures from top to bottom), it can be found that Figure 4 The depths of the ablated areas shown in the SWLI pictures and cross-sectional dimension diagrams of a-4c are not uniform, and the actual ablated areas are all incomplete, with a low degree of conformity to the filled circular surface and poor processing effect.

[0067] B. Ablating a circular surface on the surface of a single-crystal diamond coated with a Ti metal thin film

[0068] Then, ablation is carried out on the surface of a single-crystal diamond coated with a Ti metal thin film. Specifically, in this embodiment, a magnetron sputtering vacuum coating machine is used for coating when coating the single-crystal diamond surface; after coating, a laser with a specific power is used for ablation, as Figure 5 shown in a-5c, when the laser power increases from 4W, 9W, to 17W respectively, it can be found that Figure 5 In a-5c, observing the structural schematic diagram, SWLI picture, and cross-sectional dimension schematic diagram of the ablated circular surface from top to bottom respectively, it can be seen that there are no cracks generated on the surface of the single-crystal diamond where ablation occurs, and there are metal thin film deposits on the surface of the single-crystal diamond. Specifically:

[0069] Figure 5 a is the ablation image when the laser power is 4W. The laser only ablates and melts the metal thin film and does not ablate the surface of the single-crystal diamond; when the power increases to 9W, as Figure 5 shown in b, due to the gasification of the metal thin film, graphitization occurs on the surface layer of the single-crystal diamond (producing a piston-shaped graphite layer). As the ablation progresses, the graphite "piston" penetrates from the surface to the inside of the single-crystal diamond, and finally a relatively uniform round pit is produced by ablation; as Figure 5 shown in c, when the power increases to 17W, the graphite "piston" also shows a relatively uniform round pit on the diamond, but it is not as uniform as the ablation when the laser power is 9W.

[0070] C. Ablating a circular surface on the surface of a diamond coated with different types of metal films

[0071] Laser ablation is carried out on the surface of a single-crystal diamond coated with different metal films. As Figure 6 shown in a, when a 9W laser ablates a single-crystal diamond coated with a Cu film, the ablated area of the diamond is the same asFigure 5 The texture of the ablation area in b is similar. When the copper film is replaced with other metal films, such as Al (a), Ni (b), Pt (c), etc., single-crystal diamond can also be uniformly ablated by a nanosecond laser with a power of 9W, and no crack breakage occurs. Figure 6 The SWLI images in b-6c can clearly show the high uniformity of the ablation area, and the actual ablation area is complete, with a high degree of conformity to the filled circular surface, and the processing effect is good.

[0072] Therefore, the optimal power for laser ablation of diamond is 9W, and the surface of the ablated single-crystal diamond is coated with a metal film. Regardless of the specific material of the metal film, a graphite layer with uniform texture can be ablated.

[0073] Since the uniform ablation of single-crystal diamond by nanosecond pulsed laser includes two stages, namely, surface graphitization and single-crystal diamond ablation stage. When the nanosecond pulsed laser irradiates single-crystal diamond, a thin self-sustaining graphitized layer is first formed on the surface of the single-crystal diamond. And because the linear absorption of graphite for ultraviolet-infrared laser is about 100 times that of single-crystal diamond, the graphite layer generated on the surface of the single-crystal diamond can strongly absorb laser energy, preventing the laser from directly ablating the doped defect part in the single-crystal diamond substrate. After that, the existing graphitized layer is continuously ablated, and at the same time, the single-crystal diamond layer under the previous graphitized layer is continuously graphitized at high temperature, that is, a new graphitized layer is generated. Generally speaking, the process of laser ablation of single-crystal diamond is like a process in which a graphite "piston" penetrates from the surface to the inside of the single-crystal diamond.

[0074] Generally speaking, compared with the prior art, the present invention has the following advantages:

[0075] 1. The coating film deposition speed is fast. Using a magnetron sputtering vacuum coating machine for film deposition, the required film deposition time for different metal types can be controlled within 10 min - 40 min, and the film thickness range covers 20 nm - 200 nm, which can meet the actual mass production requirements.

[0076] 2. The coating metals are all non-toxic materials, and there is no dust pollution during the film deposition process, with high safety.

[0077] 3. The metal film of the present invention is relatively thin, and the laser ablation processing speed is very fast. The ablation time of the general ablation area is in the millisecond to second level, and usually scanning once can meet the production requirements, with higher processing efficiency.

[0078] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for uniformly ablating single crystal diamond, characterized in that: Including the steps: S1. Ion-plate a metal thin film with a thickness of 20 nm to 200 nm on the surface of the cleaned single-crystal diamond; S2. Use a nanosecond pulsed laser with a preset laser power of 9 W to 20 W to perform single-scan pulsed ablation on the metal thin film. When the metal thin film is completely ablated, continue ablation until a graphite layer is formed on the single-crystal diamond. Among them, the processing parameters of the nanosecond pulsed laser are: the repetition frequency is set to 80 kHz to 120 kHz, the laser scanning speed is set to 500 mm / s to 700 mm / s, and the spot size is set to 10 μm to 15 μm.

2. A method for uniformly ablating single crystal diamond according to claim 1, characterized in that: The metal thin film contains one metal element.

3. The method for homogenizing and ablating single crystal diamond according to claim 1, wherein The metal thin film contains multiple metal elements.

4. A method for homogenizing and ablating single crystal diamond as described in claim 1, characterized in that, The metal thin film contains any one of the metal elements Pt, Cu, Al, Ni, or Ti.

5. The method for homogenizing and ablating single-crystal diamond according to claim 1, characterized in that, The metal thin film contains at least two of the metal elements Pt, Cu, Al, Ni, or Ti.

6. A method for homogenizing and ablating single crystal diamond according to any one of claims 1-5, characterized in that, The thickness of the metal thin film is 50 nm - 150 nm.

7. A method for uniformly ablating single crystal diamond according to claim 6, characterized in that: The thickness of the metal thin film is 60 nm - 100 nm.

8. A method for homogenizing and ablating single-crystal diamond as claimed in claim 1, characterized in that, In step S2, the laser power is set to 9 W - 17 W, the repetition frequency is set to 100 kHz, the laser scanning speed is set to 600 mm / s, and the spot size is set to 12 μm.

9. The method for homogenizing and ablating single-crystal diamond according to claim 1, characterized in that, In step S2, the wavelength of the nanosecond pulsed laser is 355 nm, 532 nm, or 1064 nm.

10. The method for uniformly ablating single crystal diamond according to claim 1, wherein: In step S1, the metal thin film is plated by a magnetron sputtering vacuum coating technology.

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