A method and apparatus for measuring polarization reflectance

Abstract

The present application relates to a kind of polarized reflectivity measurement method and device, including using ellipsometer to measure a reference sample, collect light intensity signal, and carry out ellipsometer system calibration, obtain the system parameters after calibration and reference sample film thickness;Using the system parameters after calibration and the light intensity signal, the measurement mueller matrix of reference sample is calculated to obtain;Using the system parameters after calibration and reference sample film thickness, the reflectivity of reference sample is simulated to obtain;According to the measurement mueller matrix of reference sample and the reflectivity of reference sample, the equivalent light source light intensity is calculated to obtain;For any to-be-measured sample, using ellipsometer to collect light intensity signal, and using the system parameters after calibration, the measurement mueller matrix of to-be-measured sample is calculated to obtain;Using the equivalent light source light intensity and the measurement mueller matrix of to-be-measured sample, the polarized reflectivity of to-be-measured sample is calculated to obtain.

Description

Technical Field

[0001] This invention relates to the field of optical scattering measurement technology, and specifically to a method and apparatus for measuring polarization reflectivity. Background Technology

[0002] As a type of electromagnetic wave, light waves can be described in terms of intensity, phase, and polarization state. When a light wave propagates from one medium to another, not only does its propagation direction change at the interface, but its phase and polarization state also change. Therefore, the reflected and transmitted light generated after light shines on a sample carries characteristic information about the sample itself, which can be used to analyze the sample's features, such as the material's refractive index and film thickness.

[0003] An ellipsometer, as a precision optical measuring instrument, can measure the changes a sample makes to the s-polarization and p-polarization components of light waves. Specifically, it can measure the amplitude ratio and phase difference between the two polarization components. It's easy to understand that the amplitude ratio and phase difference are relative changes. However, in some applications, such as in the optimized design of polarization devices, it is necessary to obtain the absolute changes made by the sample to the s-polarization and p-polarization components of light waves, that is, to measure the polarization reflectivity of the sample. Summary of the Invention

[0004] To address the technical problems existing in the prior art, in a first aspect, the present invention provides a polarization reflectance measurement method based on an ellipsometer, comprising the following steps:

[0005] S101, use an ellipsometer to measure a reference sample, collect light intensity signals, and perform ellipsometer system calibration to obtain the calibrated system parameters and the film thickness of the reference sample;

[0006] S102, using the calibrated system parameters and the light intensity signal, calculate the measurement Mueller matrix of the reference sample;

[0007] S103, using the calibrated system parameters and the film thickness of the reference sample, the reflectivity of the reference sample is simulated and obtained;

[0008] S104. The equivalent light intensity of the light source is calculated based on the measured Mueller matrix of the reference sample and the reflectivity of the reference sample.

[0009] S105: For any sample to be tested, the light intensity signal is collected by an ellipsometer, and the measurement Mueller matrix of the sample is calculated using the calibrated system parameters.

[0010] S106. The polarization reflectance of the sample is calculated using the equivalent light source intensity and the measured Mueller matrix of the sample.

[0011] Furthermore, the system model of the ellipsometer system is as follows:

[0012] I out =[M A R(A)]×[R(-ω2t+C2)M C [(δ2)R(ω2t-C2)]×M S

[0013] ×[R(-ω1t+C1)M C (δ1)R(ω1t-C1)]×[R(-P)M P ]×S in

[0014] Where t represents time, S in Let I be the Stokes vector of the light emitted by the light source. out The light intensity represents the output of the system model; P, A, C1, and C2 are the azimuth angles of the polarizer arm, analyzer arm, first rotating waveplate, and second rotating waveplate, respectively; δ1 and δ2 are the phase delays of the first and second rotating waveplates, respectively; M A and M P M is the characteristic Mueller matrix of the polarizer. C M is the characteristic Mueller matrix of the phase delayer, R is the rotation matrix; s ω1 is the normalized Mueller matrix corresponding to the sample, which depends on the ellipsometer incident angle AOI, the sample thickness, and the refractive index of the sample material; ω1 and ω2 are the angular frequencies of the first and second rotating waveplates, respectively.

[0015] Furthermore, the calibration process in step S101 is as follows:

[0016] The periodic light intensity measured by the ellipsometer is converted into Fourier coefficients;

[0017] A function was written based on the ellipsometer system model. Its inputs are system parameters and the film thickness THK of the reference sample, and its output is the Fourier coefficient of the simulated output light intensity of the system model.

[0018] By adjusting the input parameter values ​​of the system model function using a nonlinear fitting algorithm, the output simulated Fourier coefficients are made to match the measured Fourier coefficients.

[0019] Furthermore, using the calibrated system parameters and the light intensity signal, the measurement Mueller matrix of the reference sample is calculated, including:

[0020] Transform the system model into matrix form: I out =AM S G, where A represents the detection arm system matrix and G represents the starting arm system matrix;

[0021] The measured reflected light intensity I of the sample det Then, based on the system model, the measurement Mueller matrix of the sample to be tested can be obtained: M' S =A -1 I det G -1 ;

[0022] Considering the transmittance of the optical device, the reflectance of the sample, and the intensity of the light source, we have:

[0023] M' S =A -1 I det G -1 =R S I sou A -1 I out G -1 =R S I sou M S

[0024] Among them, I sou It is the product of the light source intensity and the transmittance of all optical devices, and is called the equivalent light source intensity.

[0025] Substituting the calibrated system parameters and the light intensity signal into the above formula, the measurement Mueller matrix of the reference sample is calculated.

[0026] Furthermore, step S106 includes:

[0027] Based on the measurement of the Mueller matrix M' of the sample under test S and equivalent light source intensity I sou Using the formula: M' S =A -1 I det G -1 =R S I sou A -1 I out G -1 =R S I sou M S The non-normalized measurement Mueller matrix m of the sample under test was calculated. S :m S =R S M S =M' S (I sou ) -1 ;

[0028] Using m S Calculate the s-polarized reflectance and p-polarized reflectance of the sample under test:

[0029] R S,s偏振 =m S,11 -m S,21 +m S,13 -m S,23

[0030] R S,p偏振 =m S,11 +m S,21 +m S,13 +m S,23

[0031] Where, m S,ij Representing matrix m S The element in the i-th row and j-th column.

[0032] Furthermore, the simulation methods in step S103 include the thin film transfer matrix method and the thin film optical property modeling algorithm.

[0033] In a second aspect, the present invention provides a polarization reflectance measuring device, comprising:

[0034] The calibration module uses an ellipsometer to measure a reference sample, collects light intensity signals, and calibrates the ellipsometer system to obtain the calibrated system parameters and the film thickness of the reference sample.

[0035] The first calculation module uses the calibrated system parameters and the light intensity signal to calculate the measurement Mueller matrix of the reference sample;

[0036] The simulation module uses the calibrated system parameters and the film thickness of the reference sample to simulate the reflectivity of the reference sample.

[0037] The second calculation module calculates the equivalent light intensity of the light source based on the measured Mueller matrix and the reflectivity of the reference sample.

[0038] The third calculation module uses an ellipsometer to collect light intensity signals for any sample under test and calculates the measurement Mueller matrix of the sample under test using the calibrated system parameters.

[0039] The reflectivity calculation module calculates the polarization reflectivity of the sample by using the equivalent light intensity of the light source and the measured Mueller matrix of the sample.

[0040] Thirdly, the present invention provides an electronic device, comprising:

[0041] Memory, used to store computer software programs;

[0042] A processor is used to read and execute the computer software program, thereby implementing the polarization reflectance measurement method described in the first aspect of the present invention.

[0043] Fourthly, the present invention provides a non-transitory computer-readable storage medium storing a computer software program for implementing a polarization reflectance measurement method as described in the first aspect of the present invention. Attached Figure Description

[0044] Figure 1 This is a schematic flowchart of a polarization reflectance measurement method provided in an embodiment of the present invention;

[0045] Figure 2 This is a schematic diagram of a typical double-rotating-waveplate ellipsometer.

[0046] Figure 3 This is a schematic diagram of a polarization reflectivity measuring device provided in an embodiment of the present invention;

[0047] Figure 4 A schematic diagram of an embodiment of the electronic device provided in this invention;

[0048] Figure 5 This is a schematic diagram of an embodiment of a computer-readable storage medium provided in this invention. Detailed Implementation

[0049] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0050] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0051] In the description of this application, the term "for example" is used to mean "used as an example, illustration, or description." Any embodiment described as "for example" in this application is not necessarily to be construed as being more preferred or advantageous than other embodiments. The following description is provided to enable any person skilled in the art to make and use the invention. Details are set forth in the following description for purposes of explanation. It should be understood that those skilled in the art will recognize that the invention can be made without using these specific details. In other instances, well-known structures and processes will not be described in detail to avoid obscuring the description of the invention with unnecessary detail. Therefore, the invention is not intended to be limited to the embodiments shown, but is consistent with the broadest scope of the principles and features disclosed in this application.

[0052] like Figure 1 As shown, this embodiment of the invention provides a method for measuring polarization reflectivity, including the following steps:

[0053] S101. Use an ellipsometer to measure a reference sample, collect light intensity signals, and perform ellipsometer system calibration to obtain system parameter calibration results and the film thickness of the reference sample.

[0054] The principle of a typical double-rotating-waveplate ellipsometer is as follows: Figure 2 As shown, its core components include a light source, a polarizing arm (mainly composed of a polarizer and a first rotating waveplate), a sample stage, an analyzer arm (mainly composed of an analyzer and a second rotating waveplate), and a detector. Specifically, the system model of the ellipsometer can be represented by the following equation:

[0055]

[0056] Where t represents time, S in Let I be the Stokes vector of the light emitted by the light source. out The light intensity represents the output of the system model; P, A, C1, and C2 are the azimuth angles of the polarizer arm, analyzer arm, first rotating waveplate, and second rotating waveplate, respectively; δ1 and δ2 are the phase delays of the first and second rotating waveplates, respectively; M A and M P M is the characteristic Mueller matrix of the polarizer. C M is the characteristic Mueller matrix of the phase delayer, R is the rotation matrix; sThe normalized Mueller matrix corresponding to the sample (i.e., all elements in the matrix are normalized about the first element) depends on the ellipsometer incident angle AOI, the sample thickness, and the refractive index of the sample material; ω1 and ω2 are the angular frequencies of the first and second rotating waveplates, respectively, and their ratio is a constant, therefore the light intensity received by the detector is a one-period signal. The system parameters P, A, C1, C2, δ1, δ2, and AOI need to be calibrated.

[0057] When the reference sample is placed on the ellipsometer sample stage, the detector can receive the periodic light intensity signal reflected by the sample.

[0058] Preferably, system parameter calibration can be achieved as follows: First, the periodic light intensity measured by the ellipsometer is converted into Fourier coefficients; then, a function is written based on the ellipsometer system model, whose inputs are the system parameters and the reference sample film thickness THK, and whose output is the Fourier coefficients of the simulated output light intensity of the system model; finally, the input parameter values ​​of the system model function are adjusted by algorithms such as nonlinear fitting so that the output simulated Fourier coefficients match the measured Fourier coefficients. There is a wealth of information on calibration methods, which will not be elaborated upon here.

[0059] S102. Calculate the measurement Mueller matrix of the reference sample by using the calibration system parameters and the light intensity measured on the reference sample.

[0060] In actual measurement, multiple frames of light intensity data are typically collected within one optical cycle, meaning the light intensity is collected at different times t. Therefore, the system model can be written in the following matrix form:

[0061] I out =AM S G (2)

[0062] Where A represents the analyzer system matrix and G represents the polarizer system matrix, both of which can be calculated from the system model formula. Therefore, in the actual measurement process, the measured reflected light intensity I of the sample is... det Then, based on the system model, the measurement Mueller matrix of the sample to be tested can be obtained:

[0063] M' S =A -1 I det G -1 (3)

[0064] It should be noted that the calculation formula of the system model does not take into account the transmittance of optical devices such as polarizers and waveplates, the reflectance of the sample, and the intensity of the light source, while the actual measured light intensity I... det It includes all of the above factors, therefore:

[0065] M' S =A-1 I det G -1 =R S I sou A -1 I out G -1 =R S I sou M S (4)

[0066] Among them, I sou It is the product of the light source intensity and the transmittance of all optical components, and is called the equivalent light source intensity.

[0067] Therefore, the light intensity of the reference sample was measured. After calculating the system matrices A and G based on the system parameters obtained from calibration in step S101, the measurement Mueller matrix M' of the reference sample can then be calculated. ref .

[0068] S103. Using the calibration system parameters and the film thickness information of the reference sample, the reflectivity of the reference sample is obtained through simulation.

[0069] Using the reference sample film thickness THK and system incident angle AOI obtained from the calibration in step S101, as well as the refractive index of the material used in the reference sample, the reflectivity R of the reference sample is simulated. ref .

[0070] Preferably, the simulation method can be a thin film optical property modeling algorithm such as the thin film transfer matrix method or Fresnel formula.

[0071] S104. Calculate the equivalent light intensity based on the Mueller matrix and reflectivity of the reference sample.

[0072] The Mueller matrix M' of the reference sample calculated in step S102 is used to measure the reference sample. ref Normalizing the first element yields the normalized measurement Mueller matrix M. ref ;

[0073] Using the reflectivity R of the reference sample obtained from the simulation in step S103 ref The equivalent light source intensity is:

[0074] I sou =M' ref (R ref M ref ) -1 (5)

[0075] S105. For any sample to be tested, use an ellipsometer to collect light intensity signals and use system parameters to calculate the Mueller matrix.

[0076] For any sample to be tested, the light intensity I is collected using an ellipsometer. det Based on the system parameters obtained from the calibration in step S101, the Mueller matrix M' of the sample under test is calculated using equation (3). S .

[0077] S106. Measure the Mueller matrix using the equivalent light source intensity and the sample under test, and calculate the polarization reflectivity of the sample under test.

[0078] First, the Mueller matrix M' is measured based on the sample under test. S and equivalent light source intensity I sou Using formula (4), the non-normalized measurement Mueller matrix m of the sample to be tested is calculated. S :

[0079] m S =R S M S =M' S (I sou ) -1 (6)

[0080] Using m S Calculate the s-polarized reflectance and p-polarized reflectance of the sample under test:

[0081] R S,s偏振 =m S,11 -m S,21 +m S,13 -m S,23

[0082] R S,p偏振 =m S,11 +m S,21 +m S,13 +m S,23

[0083] Where, m S,ij Representing matrix m S The element in the i-th row and j-th column.

[0084] like Figure 3 As shown, this embodiment of the invention also provides a polarization reflectance measuring device, comprising:

[0085] The calibration module uses an ellipsometer to measure a reference sample, collects light intensity signals, and calibrates the ellipsometer system to obtain the calibrated system parameters and the film thickness of the reference sample.

[0086] The first calculation module uses the calibrated system parameters and the light intensity signal to calculate the measurement Mueller matrix of the reference sample;

[0087] The simulation module uses the calibrated system parameters and the film thickness of the reference sample to simulate the reflectivity of the reference sample.

[0088] The second calculation module calculates the equivalent light intensity of the light source based on the measured Mueller matrix and the reflectivity of the reference sample.

[0089] The third calculation module uses an ellipsometer to collect light intensity signals for any sample under test and calculates the measurement Mueller matrix of the sample under test using the calibrated system parameters.

[0090] The reflectivity calculation module calculates the polarization reflectivity of the sample by using the equivalent light intensity of the light source and the measured Mueller matrix of the sample.

[0091] Please see Figure 4 , Figure 4 This is a schematic diagram illustrating an embodiment of the electronic device provided in this invention. For example... Figure 4 As shown, this embodiment of the invention provides an electronic device 500, including a memory 510, a processor 520, and a computer program 511 stored in the memory 510 and executable on the processor 520. When the processor 520 executes the computer program 511, it performs the following steps:

[0092] S102, using the calibrated system parameters and the light intensity signal, calculate the measurement Mueller matrix of the reference sample;

[0093] S103, using the calibrated system parameters and the film thickness of the reference sample, the reflectivity of the reference sample is simulated and obtained;

[0094] S104. The equivalent light intensity of the light source is calculated based on the measured Mueller matrix of the reference sample and the reflectivity of the reference sample.

[0095] S105: For any sample to be tested, the light intensity signal is collected by an ellipsometer, and the measurement Mueller matrix of the sample is calculated using the calibrated system parameters.

[0096] S106. The polarization reflectance of the sample is calculated using the equivalent light source intensity and the measured Mueller matrix of the sample.

[0097] Please see Figure 5 , Figure 5 This is a schematic diagram illustrating an embodiment of a computer-readable storage medium provided by an embodiment of the present invention. For example... Figure 5 As shown, this embodiment provides a computer-readable storage medium 600, on which a computer program 611 is stored. When the computer program 611 is executed by a processor, it performs the following steps:

[0098] S102, using the calibrated system parameters and the light intensity signal, calculate the measurement Mueller matrix of the reference sample;

[0099] S103, using the calibrated system parameters and the film thickness of the reference sample, the reflectivity of the reference sample is simulated and obtained;

[0100] S104. The equivalent light intensity of the light source is calculated based on the measured Mueller matrix of the reference sample and the reflectivity of the reference sample.

[0101] S105: For any sample to be tested, the light intensity signal is collected by an ellipsometer, and the measurement Mueller matrix of the sample is calculated using the calibrated system parameters.

[0102] S106. The polarization reflectance of the sample is calculated using the equivalent light source intensity and the measured Mueller matrix of the sample.

[0103] It should be noted that the descriptions of each embodiment in the above embodiments have different focuses. For parts that are not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0104] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0105] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0106] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0107] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0108] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the invention.

[0109] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. A method for measuring polarization reflectance, characterized in that, Includes the following steps: S101, use an ellipsometer to measure a reference sample, collect light intensity signals, and perform ellipsometer system calibration to obtain the calibrated system parameters and the film thickness of the reference sample; S102, using the calibrated system parameters and the light intensity signal, calculate the measurement Mueller matrix of the reference sample; S103, using the calibrated system parameters and the film thickness of the reference sample, the reflectivity of the reference sample is simulated and obtained; S104. The equivalent light intensity of the light source is calculated based on the measured Mueller matrix of the reference sample and the reflectivity of the reference sample. S105: For any sample to be tested, the light intensity signal is collected by an ellipsometer, and the measurement Mueller matrix of the sample is calculated using the calibrated system parameters. S106. The polarization reflectance of the sample under test is calculated using the equivalent light source intensity and the measured Mueller matrix of the sample under test. The calculation of the equivalent light source intensity based on the measured Mueller matrix and reflectivity of the reference sample includes: The light intensity of the equivalent light source satisfies the following formula: ； in, The Mueller matrix was measured using a reference sample. For the reference sample reflectivity, To measure the Mueller matrix of the reference sample The normalized measurement Mueller matrix obtained by normalizing the first element; Step S106 includes: Based on the measurement of the Mueller matrix of the sample under test and equivalent light source intensity Using the formula: The non-normalized measurement Mueller matrix of the sample under test was calculated. : ; use Calculate the s-polarized reflectance and p-polarized reflectance of the sample under test: in, Representation matrix No. i Line number j The elements of the column.

2. The method according to claim 1, characterized in that, The system model of the ellipsometry system is as follows: Where t represents time, S in Let I be the Stokes vector of the light emitted by the light source. out The light intensity represents the output of the system model; P, A, C1, and C2 are the azimuth angles of the polarizer arm, analyzer arm, first rotating waveplate, and second rotating waveplate, respectively; δ1 and δ2 are the phase delays of the first and second rotating waveplates, respectively; M A and M P M is the characteristic Mueller matrix of the polarizer. C M is the characteristic Mueller matrix of the phase delayer, R is the rotation matrix; s ω1 is the normalized Mueller matrix corresponding to the sample, which depends on the ellipsometer incident angle AOI, the sample thickness, and the refractive index of the sample material; ω1 and ω2 are the angular frequencies of the first and second rotating waveplates, respectively.

3. The method according to claim 1, characterized in that, The calibration process in step S101 is as follows: The periodic light intensity measured by the ellipsometer is converted into Fourier coefficients; A function was written based on the ellipsometer system model. Its inputs are system parameters and the film thickness THK of the reference sample, and its output is the Fourier coefficient of the simulated output light intensity of the system model. By adjusting the input parameter values ​​of the system model function using a nonlinear fitting algorithm, the output simulated Fourier coefficients are made to match the measured Fourier coefficients.

4. The method according to claim 2, characterized in that, Using the calibrated system parameters and the light intensity signal, the measurement Mueller matrix of the reference sample is calculated, satisfying the following equation: in, For the reference sample's light intensity, The measurement Mueller matrix is ​​for the reference sample, where A represents the analyzer system matrix and G represents the starter system matrix.

5. The method according to claim 1, characterized in that, The simulation methods in step S103 include the thin film transfer matrix method and the thin film optical property modeling algorithm.

6. A polarization reflectance measuring device, characterized in that, include: The calibration module uses an ellipsometer to measure a reference sample, collects light intensity signals, and calibrates the ellipsometer system to obtain the calibrated system parameters and the film thickness of the reference sample. The first calculation module uses the calibrated system parameters and the light intensity signal to calculate the measurement Mueller matrix of the reference sample; The simulation module uses the calibrated system parameters and the film thickness of the reference sample to simulate the reflectivity of the reference sample. The second calculation module calculates the equivalent light intensity of the light source based on the measured Mueller matrix and the reflectivity of the reference sample. The third calculation module uses an ellipsometer to collect light intensity signals for any sample under test and calculates the measurement Mueller matrix of the sample under test using the calibrated system parameters. The reflectivity calculation module calculates the polarization reflectivity of the sample by using the equivalent light intensity of the light source and the measured Mueller matrix of the sample. The calculation of the equivalent light source intensity based on the measured Mueller matrix and reflectivity of the reference sample includes: The light intensity of the equivalent light source satisfies the following formula: ； in, The Mueller matrix was measured using a reference sample. For the reference sample reflectivity, To measure the Mueller matrix of the reference sample The normalized measurement Mueller matrix obtained by normalizing the first element; The calculation of the polarization reflectivity of the sample under test using the equivalent light source intensity and the measured Mueller matrix of the sample includes: Based on the measurement of the Mueller matrix of the sample under test and equivalent light source intensity Using the formula: The non-normalized measurement Mueller matrix of the sample under test was calculated. : ; use Calculate the s-polarized reflectance and p-polarized reflectance of the sample under test: in, Representation matrix No. i Line number j The elements of the column.

7. An electronic device, characterized in that, include: Memory, used to store computer software programs; A processor is configured to read and execute the computer software program, thereby implementing the polarization reflectance measurement method according to any one of claims 1-5.

8. A non-transitory computer-readable storage medium, characterized in that, The storage medium stores a computer software program for implementing the polarization reflectivity measurement method according to any one of claims 1-5.

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