A photomask, a manufacturing method thereof, and an exposure method

Abstract

The application relates to the field of semiconductor processing, and discloses a photomask, a manufacturing method thereof, and an exposure method. The photomask comprises a first pattern area and a first cutting path area surrounding the first pattern area, the first cutting path area has a first test element group mark, and a side of the first test element group mark and an edge adjacent to the first test element group mark in the first cutting path area have a first gap in the width direction of the first cutting path area. In the photomask, the side of the first test element group mark and the edge adjacent to the first test element group mark in the first cutting path area have the first gap, that is, the first test element group mark and the first pattern area have the first gap, in the manufacturing process of the photomask, photoresist in the second scanning separates the metal, so that the metal in the first gap is removed, and no extra metal is left on the photomask, thereby avoiding the influence of the residual metal on the chip pattern area of a wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a photomask, its fabrication method, and an exposure method. Background Technology

[0002] With the rapid development of the electronics industry, photomasks have become an indispensable tool in electronic manufacturing industries such as Liquid Crystal Display (LCD) and Integrated Circuit (IC), and their applications are becoming increasingly widespread. PSM (Phase Shift Mask) photomasks require a second scan during fabrication to remove excess metal, but some metal residue may remain, causing striped patterns in the chip's patterned areas during the chip manufacturing process. Summary of the Invention

[0003] According to some embodiments, a first aspect of this application provides a photomask, including: a first patterned region and a first cut-out region surrounding the first patterned region, wherein the first cut-out region has a first test element group mark, and along the width direction of the first cut-out region, a first gap is formed between the side of the first test element group mark and the edge of the first cut-out region adjacent to the first test element group mark.

[0004] The embodiments of this application have at least the following advantages:

[0005] The first test element group mark in the photomask is located in the first dicing area, and there is a first gap between the side of the first test element group mark and the edge of the first test element group mark in the first dicing area. That is, there is a first gap between the first test element group mark and the first pattern area. During the fabrication of the photomask, the photoresist will separate the metal during the second scan, so that the metal located in the first gap is removed. There will be no excess metal residue on the photomask, thereby avoiding the influence of residual metal on the pattern area of ​​the wafer chip.

[0006] In some embodiments, the shape of the first test element group mark is rectangular, the side of the first test element group mark includes a first side and a second side arranged in parallel, and the extension direction of the first side and the second side is the same as the extension direction of the first cutting channel region. The edge of the first cutting channel region includes a first edge and a second edge, the first edge is located on the side of the first side away from the second side, and the second edge is located on the side of the second side away from the first side.

[0007] The first side and the first edge have the first gap; and / or,

[0008] The second side and the second edge have the first gap.

[0009] In some embodiments, the first gap a satisfies: a≥0.5μm.

[0010] In some embodiments, the width d1 of the first test element group marker and the width D1 of the first cutting channel region satisfy the following relationship:

[0011] d1≤λ1D1

[0012] Among them, λ1 ranges from 80% to 85%.

[0013] In some embodiments, the photomask further includes a second patterned region and a second cutout region surrounding the second patterned region, the second cutout region overlapping with the first cutout region; a second test element group marker is provided in the second cutout region, the second test element group marker is located in the overlapping region, the second test element group marker and the first test element group marker are arranged along a first direction, wherein the first direction is the arrangement direction of the first patterned region and the second patterned region;

[0014] Along the first direction, there is a second gap between the side of the second test element group mark and the edge of the second cut channel region adjacent to the second test element group mark.

[0015] In some embodiments, the shape of the second test element group mark is rectangular, the side of the second test element group mark includes a third side and a fourth side arranged in parallel, and the extension direction of the third side and the fourth side is the same as the extension direction of the second cutting channel region. The edge of the second cutting channel region includes a third edge and a fourth edge, the third edge is located on the side of the third side away from the fourth side, and the fourth edge is located on the side of the fourth side away from the third side.

[0016] The third side and the third edge have the second gap; and / or,

[0017] The second gap exists between the fourth side and the fourth edge.

[0018] In some embodiments, the second gap b satisfies: b ≥ 0.5 μm.

[0019] In some embodiments, the width d2 of the second test element group marker and the width D2 of the second cutting area satisfy the following relationship:

[0020] d2≤λ2D2

[0021] Among them, λ2 ranges from 80% to 85%.

[0022] In some embodiments, the first cutting channel region includes a first sub-cutting channel region and a second sub-cutting channel region, wherein the first sub-cutting channel region is located between the second sub-cutting channel region and the first graphic region, and the second sub-cutting channel region surrounds the first sub-cutting channel region, and the first sub-cutting channel region surrounds the first graphic region.

[0023] According to some embodiments, a second aspect of this application provides a method for fabricating a photomask, comprising:

[0024] Provide a substrate;

[0025] The substrate is subjected to a first patterning process to form a first pattern on the substrate. The first pattern includes a first graphic area, a first sub-cutting area surrounding the first graphic area, and a first test element group mark. The first test element group mark and the first sub-cutting area have an overlapping area. Along the width direction of the first sub-cutting area, the distance between the first test element group mark and the first graphic area is greater than the distance between the first sub-cutting area and the first graphic area.

[0026] The substrate is subjected to a second patterning process to form a second pattern on the first pattern of the substrate. The second pattern includes a second sub-cutting channel region and a second test element group mark. The second sub-cutting channel region surrounds the first sub-cutting channel region to form a first cutting channel region. The first test element group mark overlaps with the second sub-cutting channel region, and the second test element group mark overlaps with both the first and second sub-cutting channel regions. The second test element group mark and the first test element group mark are arranged along a first direction. Along the first direction, there is a first gap between the edge of the first test element group mark and the edge of the first test element group mark adjacent to the first test element group mark in the first cutting channel region. There is a second gap between the edge of the second test element group mark and the edge of the first test element group mark adjacent to the second test element group mark in the first cutting channel region.

[0027] In some embodiments, the first gap a satisfies: a≥0.5μm.

[0028] In some embodiments, the width d1 of the first test element group marker and the width D1 of the first cutting channel region satisfy the following relationship:

[0029] d1≤λ1D1

[0030] Among them, λ1 ranges from 80% to 85%.

[0031] In some embodiments, the second gap b satisfies: b ≥ 0.5 μm.

[0032] In some embodiments, the width d2 of the second test element group marker and the width D1 of the first cutting channel region satisfy the following relationship:

[0033] d2≤λ2D1

[0034] Among them, λ2 ranges from 80% to 85%.

[0035] According to some embodiments, a third aspect of this application provides an exposure method, including:

[0036] Provide a wafer comprising multiple exposure regions arranged in an array;

[0037] The wafer is exposed using a photomask as described in any one of the first aspects to form an exposure pattern in each of the exposure areas. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of the structure of a photomask provided in an embodiment of the present invention;

[0039] Figure 2 This is a schematic diagram of the structure of the first exposure during the photomask fabrication process provided in an embodiment of the present invention;

[0040] Figure 3 for Figure 2 A schematic diagram of the structure during the second exposure of the photomask;

[0041] Figures 4a-4d This is a schematic diagram of the fabrication process for a second exposure of a photomask, provided as an embodiment of the present invention.

[0042] Icons: 100 - First pattern area; 200 - First dicing area; 300 - First test element group marker; 400 - Second pattern area; 500 - Second dicing area; 600 - Second test element group marker; 700 - Substrate; 210 - First sub-dicing area; 220 - Second sub-dicing area; 310 - First side; 320 - Second side; 610 - Third side; 620 - Fourth side; 710 - Substrate; 720 - Semi-transparent film layer; 730 - Metal layer; 800 - Photoresist layer. Detailed Implementation

[0043] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0044] According to some embodiments, such as Figure 1 As shown, a first aspect of this application provides a photomask, including: a first patterned region 100 and a first slit region 200 surrounding the first patterned region 100, wherein the first slit region 200 has a first test element group mark 300, and along the width direction of the first slit region 200, there is a first gap between the side of the first test element group mark 300 and the edge of the first slit region 200 adjacent to the first test element group mark 300.

[0045] The embodiments of this application have at least the following advantages:

[0046] The first test element group mark 300 in the photomask is located within the first dicing area 200, and there is a first gap between the side of the first test element group mark 300 and the edge of the first dicing area 200 adjacent to the first test element group mark 300. That is, there is a first gap between the first test element group mark 300 and the first pattern area 100. During the fabrication of the photomask, the photoresist will separate the metal during the second scan, thereby removing the metal located in the first gap. There will be no excess metal residue on the photomask, thus avoiding the influence of residual metal on the pattern area of ​​the wafer chip.

[0047] In some embodiments, the shape of the first test element group mark 300 is rectangular. The sides of the first test element group mark 300 include a first side 310 and a second side 320 arranged in parallel. The extension directions of the first side 310 and the second side 320 are the same as the extension direction of the first cutting channel region 200. The edge of the first cutting channel region 200 includes a first edge and a second edge. The first edge is located on the side of the first side 310 away from the second side 320, and the second edge is located on the side of the second side 320 away from the first side 310.

[0048] A first gap exists between the first side 310 and the first edge; and / or,

[0049] There is a first gap between the second side 320 and the second edge.

[0050] Reference Figure 1The first dicing region 200 is an annular region surrounding the first pattern region 100. The portion of the first dicing region 200 corresponding to the first test element group mark 300 is a strip extending along the X direction. The first side 310 and the second side 320 of the first test element group mark 300 both extend along the X direction. The first side 310 is adjacent to the first edge, and the second side 320 is adjacent to the second edge. There is a first gap a between the first side 310 and the first edge, and there is a first gap a between the second side 320 and the second edge. By reducing the width of the first test element group mark 300, i.e., the vertical distance between the first side 310 and the second side 320, the first test element group mark 300 is made to have a margin from the first pattern region 100. This allows the photoresist to separate the metal, such as chromium, which serves as the metal layer 730 during the second scan in the photomask fabrication process, thus preventing excess metal residue on the photomask.

[0051] In some embodiments, the first gap a satisfies: a≥0.5μm.

[0052] One possible way to achieve this is by combining Figure 1 The width of the first cutting channel region 200 is 60μm, the width of the first test element group mark 300 is 59μm, and along the width direction of the first test element group mark 300, the first gap between the first side 310 and the first edge is 0.5μm, and the first gap between the second side 320 and the second edge is also 0.5μm.

[0053] It is understandable that the value of the first gap between the first side 310 and the first edge and the value of the first gap between the second side 320 and the second edge can be equal or unequal.

[0054] In some embodiments, continue to refer to Figure 1 The width d1 of the first test element group marker 300 and the width D1 of the first cutting channel region 200 satisfy the following relationship:

[0055] d1≤λ1D1

[0056] Among them, λ1 ranges from 80% to 85%.

[0057] In some embodiments, refer to Figure 1The photomask also includes a second patterned region 400 and a second slit region 500 surrounding the second patterned region 400. The second slit region 500 overlaps with the first slit region 200. The second slit region 500 contains a second test element group mark 600, which is located in the overlapping region. The second test element group mark 600 and the first test element group mark 300 are arranged along a first direction, wherein the first direction is the arrangement direction of the first patterned region 100 and the second patterned region 400.

[0058] Along the first direction, there is a second gap between the side of the second test element group mark 600 and the edge of the second cut channel region 500 adjacent to the second test element group mark 600.

[0059] It should be noted that during the wafer exposure process, the photomask is used to cover multiple chip regions arranged in an array. The photomask has a pattern area corresponding to one or a group of chip regions. Each pattern area is also arranged in an array. The chip region corresponding to each pattern area is a test group, and each test group corresponds to a test element group marker.

[0060] Continue to refer to Figure 1 Both the first graphic region 100 and the second graphic region 400 are rectangular and are arranged along the Y-direction. A first cutting channel region 200 surrounds the outside of the first graphic region 100, and a second cutting channel region 500 surrounds the outside of the second graphic region 400. The first cutting channel region 200 includes a first portion and a second portion extending along the X-direction, and the first and second portions are arranged along the Y-direction. The second cutting channel region 500 includes a third portion and a fourth portion extending along the X-direction, and the third and fourth portions are arranged along the Y-direction, with the third portion completely overlapping the second portion. A first test element group mark 300 is located within the first portion and is used to cooperate with the first graphic region 100. A second test element group mark 600 is located within the third portion (i.e., the second portion) and is used to cooperate with the second graphic region 400.

[0061] The second test element group mark 600 in the photomask is located in the area where the second dicing region 500 and the first dicing region 200 overlap. There is a second gap between the side of the second test element group mark 600 and the edge of the second dicing region 500 or the first dicing region 200 adjacent to the second test element group mark 600. That is, there is a second gap between the second test element group mark 600 and the second pattern area 400. During the fabrication of the photomask, the photoresist will separate the metal during the second scan, so that the metal located in the second gap is removed. There will be no excess metal residue on the photomask, thereby avoiding the influence of residual metal on the pattern area of ​​the wafer chip.

[0062] It should be noted that the values ​​of the first gap and the second gap may or may not be equal.

[0063] In some embodiments, the second test element group mark 600 is rectangular in shape, and the sides of the second test element group mark 600 include a third side 610 and a fourth side 620 arranged in parallel. The extension directions of the third side 610 and the fourth side 620 are the same as the extension direction of the second cutting channel region 500. The edge of the second cutting channel region 500 includes a third edge and a fourth edge. The third edge is located on the side of the third side 610 away from the fourth side 620, and the fourth edge is located on the side of the fourth side 620 away from the third side 610.

[0064] A second gap exists between the third side 610 and the third edge; and / or,

[0065] There is a second gap between the fourth side 620 and the fourth edge.

[0066] Reference Figure 1 The second dicing region 500 is an annular region surrounding the second pattern region 400. The portion of the second dicing region 500 corresponding to the second test element group mark 600 is a strip extending along the X direction. The third side 610 and the fourth side 620 of the second test element group mark 600 both extend along the X direction. The third side 610 is adjacent to the third edge, and the fourth side 620 is adjacent to the fourth edge. There is a second gap b between the third side 610 and the third edge, and there is a second gap b between the fourth side 620 and the fourth edge. By reducing the width of the second test element group mark 600, i.e., the vertical distance between the third side 610 and the fourth side 620, the second test element group mark 600 is made to have a margin from the second pattern region 400. This allows the photoresist to separate the metal, such as chromium, which serves as the metal layer 730 during the second scan in the photomask fabrication process, thus preventing excess metal residue on the photomask.

[0067] In some embodiments, the second gap b satisfies: b ≥ 0.5 μm.

[0068] One possible way to achieve this is by combining Figure 1 The width of the second cutting channel region 500 is 60 μm, the width of the second test element group mark 600 is 59 μm, and along the width direction of the second test element group mark 600, the second gap between the third side 610 and the third edge is 0.5 μm, and the second gap between the fourth side 620 and the fourth edge is also 0.5 μm.

[0069] It is understandable that the values ​​of the second gap between the third side 610 and the third edge and the second gap between the fourth side 620 and the fourth edge can be equal or unequal.

[0070] In some embodiments, continue to refer to Figure 1 The width d2 of the second test element group marker 600 and the width D2 of the second cutting channel region 500 satisfy the following relationship:

[0071] d2≤λ2D2

[0072] Among them, λ2 ranges from 80% to 85%.

[0073] In some embodiments, refer to Figure 2 and Figure 3 The first cutting channel region 200 includes a first sub-cutting channel region 210 and a second sub-cutting channel region 220, wherein the first sub-cutting channel region 210 is located between the second sub-cutting channel region 220 and the first graphic region 100, and the second sub-cutting channel region 220 surrounds the first sub-cutting channel region 210, and the first sub-cutting channel region 210 surrounds the first graphic region 100.

[0074] According to some embodiments, refer to Figure 2 and Figure 3 and combined Figures 4a-4d The second aspect of this application provides a method for fabricating a photomask, comprising:

[0075] A substrate 700 is provided, the substrate 700 including a substrate 710, a semi-transparent film layer 720 located on one side of the substrate 710, and a metal layer 730 located on the side of the semi-transparent film layer 720 opposite to the substrate 710. For example, the metal layer 730 may be made of chromium.

[0076] The substrate 700 is subjected to a first patterning process to form a first pattern on the substrate 700. The first pattern includes a first pattern region 100, a first sub-cutting channel region 210 surrounding the first pattern region 100, and a first test element group mark 300. The first test element group mark 300 and the first sub-cutting channel region 210 have an overlapping area. Along the width direction of the first sub-cutting channel region 210, the distance between the first test element group mark 300 and the first pattern region 100 is greater than the distance between the first sub-cutting channel region 210 and the first pattern region 100.

[0077] The substrate 700 undergoes a second patterning process to form a second pattern on the first pattern of the substrate 700. The second pattern includes a second sub-cutting channel region 220 and a second test element group mark 600. The second sub-cutting channel region 220 surrounds the first sub-cutting channel region 210 to form a first cutting channel region 200. The first test element group mark 300 overlaps with the second sub-cutting channel region 220, and the second test element group mark 600 overlaps with both the first and second sub-cutting channel regions 210 and 220. The second test element group mark 600 and the first test element group mark 300 are arranged along a first direction. Along the first direction, there is a first gap between the edge of the first test element group mark 300 and the edge of the first cutting channel region 200 adjacent to the first test element group mark 300. There is a second gap between the edge of the second test element group mark 600 and the edge of the first cutting channel region 200 adjacent to the second test element group mark 600.

[0078] The embodiments of this application have at least the following advantages:

[0079] During the photomask fabrication process, the first test element group mark 300 has a margin between it and the first pattern area 100, so that the photoresist will separate the metal such as chromium, which is the metal layer 730, during the second scan of the photomask process, thus preventing excess metal residue on the photomask.

[0080] Figure 2 In the first exposure during the photomask fabrication process, the first test element group mark 300 and the first sub-cutting area 210 are both light-transmitting areas, while the first pattern area 100 of the first photomask is a light-blocking area. This results in the first sub-cutting area 210 and the first test element group mark 300 on the photomask being exposed, while the second sub-cutting area 220, the first pattern area 100, and the second test element group mark 600 on the photomask are blocked.

[0081] Figure 3 This is the second exposure during the photomask fabrication process. The second test element group mark 600 and the second sub-dicing area 220 are both light-transmitting areas, while the first pattern area 100 of the second photomask is a light-blocking area. This exposes the second sub-dicing area 220 and the second test element group mark 600 on the photomask, while blocking the first sub-dicing area 210, the first pattern area 100, and the first test element group mark 300. Because the first test element group mark 300 has sufficient clearance from the first pattern area 100, there is no excess metal residue on the photomask. Therefore, wafer exposure does not affect the pattern within the chip area of ​​the test group.

[0082] Figures 4a-4dThe process of performing a second exposure on substrate 700 is shown, with reference to Figure 4a A photoresist layer 800 is formed by coating a photoresist layer onto a substrate 700; the substrate 700 coated with the photoresist is then exposed to light. Figure 4a The dashed line represents the exposure range; refer to... Figure 4b A patterned photoresist layer 800 is obtained by developing the exposed photoresist; (Refer to...) Figure 4c The developed photoresist is then etched; refer to Figure 4d By using an etching solution to etch the substrate 700, metals such as chromium adjacent to the first pattern area 100 in the cut area are etched away without leaving any residue.

[0083] In some embodiments, the first gap a satisfies: a≥0.5μm.

[0084] In some embodiments, the width d1 of the first test element group mark 300 and the width D1 of the first cutting channel region 200 satisfy the following relationship:

[0085] d1≤λ1D1

[0086] Among them, λ1 ranges from 80% to 85%.

[0087] In some embodiments, the second gap b satisfies: b ≥ 0.5 μm.

[0088] In some embodiments, the width d2 of the second test element group mark 600 and the width D1 of the first cutting channel region 200 satisfy the following relationship:

[0089] d2≤λ2D1

[0090] Among them, λ2 ranges from 80% to 85%.

[0091] According to some embodiments, a third aspect of this application provides an exposure method, including:

[0092] Provide a wafer comprising multiple exposure regions arranged in an array;

[0093] The wafer is exposed using any of the photomasks in the first aspect embodiment to form an exposure pattern in each exposure area.

[0094] It should be noted that the wafer includes at least one test group, and each test group includes a chip area and a dicing track surrounding the chip area. The dicing track is provided with a first test element group that cooperates with the test group and a second test element group that cooperates with an adjacent test group. When the wafer is exposed using the photomask provided in the first aspect embodiment of this application, the first dicing track area corresponds to the dicing track, the first pattern area corresponds to the chip area, the first test element group mark corresponds to the first test element group, and the second test element group mark corresponds to the second test element group.

[0095] The embodiments of this application have at least the following advantages:

[0096] The first test element group mark in the photomask has a margin, i.e., a first gap, between it and the first pattern area. This allows all metals, such as chromium, within the first gap to be removed during the photomask fabrication process, so that the photomask will not affect the strip pattern in the chip area when the wafer is exposed.

[0097] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present invention without departing from the spirit and scope of the invention. Therefore, if these modifications and variations fall within the scope of the claims of the present invention and their equivalents, the present invention also intends to include these modifications and variations.

Claims

1. A photomask, characterized in that, include: A first graphic region and a first cutting channel region surrounding the first graphic region, wherein a first test element group mark is provided in the first cutting channel region, and a first gap is provided between the side of the first test element group mark and the edge of the first cutting channel region adjacent to the first test element group mark along the width direction of the first cutting channel region. The first gap a satisfies: a≥0.5μm, and the width d1 of the first test element group mark and the width D1 of the first cutting channel region satisfy the following relationship: Among them, λ1 ranges from 80% to 85%.

2. The photomask according to claim 1, characterized in that, The first test element group mark is rectangular in shape. The sides of the first test element group mark include a first side and a second side arranged in parallel. The extension directions of the first side and the second side are the same as the extension direction of the first cutting channel area. The edge of the first cutting channel area includes a first edge and a second edge. The first edge is located on the side of the first side away from the second side, and the second edge is located on the side of the second side away from the first side. The first side and the first edge have the first gap; and / or, The second side and the second edge have the first gap.

3. The photomask according to claim 1, characterized in that, The photomask further includes a second graphic region and a second cutting channel region surrounding the second graphic region, the second cutting channel region overlapping with the first cutting channel region; the second cutting channel region has a second test element group mark, the second test element group mark is located in the overlapping region, the second test element group mark and the first test element group mark are arranged along a first direction, wherein the first direction is the arrangement direction of the first graphic region and the second graphic region; Along the first direction, there is a second gap between the side of the second test element group mark and the edge of the second cut channel region adjacent to the second test element group mark.

4. The photomask according to claim 3, characterized in that, The second test element group mark is rectangular in shape. The sides of the second test element group mark include a third side and a fourth side arranged in parallel. The extension directions of the third side and the fourth side are the same as the extension direction of the second cutting channel area. The edge of the second cutting channel area includes a third edge and a fourth edge. The third edge is located on the side of the third side away from the fourth side, and the fourth edge is located on the side of the fourth side away from the third side. The third side and the third edge have the second gap; and / or, The second gap exists between the fourth side and the fourth edge.

5. The photomask according to claim 3, characterized in that, The second gap b satisfies: b ≥ 0.5 μm.

6. The photomask according to claim 3, characterized in that, The width d2 of the second test element group mark and the width D2 of the second cutting area satisfy the following relationship: Among them, λ2 ranges from 80% to 85%.

7. The photomask according to claim 1, characterized in that, The first cutting channel region includes a first sub-cutting channel region and a second sub-cutting channel region, wherein the first sub-cutting channel region is located between the second sub-cutting channel region and the first graphic region, and the second sub-cutting channel region surrounds the first sub-cutting channel region, and the first sub-cutting channel region surrounds the first graphic region.

8. A method for fabricating a photomask, characterized in that, include: Provide a substrate; The substrate is subjected to a first patterning process to form a first pattern on the substrate. The first pattern includes a first graphic area, a first sub-cutting area surrounding the first graphic area, and a first test element group mark. The first test element group mark and the first sub-cutting area have an overlapping area. Along the width direction of the first sub-cutting area, the distance between the first test element group mark and the first graphic area is greater than the distance between the first sub-cutting area and the first graphic area. The substrate undergoes a second patterning process to form a second pattern on the first pattern of the substrate. The second pattern includes a second sub-cutting channel region and a second test element group mark. The second sub-cutting channel region surrounds the first sub-cutting channel region to form a first cutting channel region. The first test element group mark overlaps with the second sub-cutting channel region, and the second test element group mark overlaps with both the first and second sub-cutting channel regions. The second test element group mark and the first test element group mark are arranged along a first direction. Along the first direction, there is a first gap between the edge of the first test element group mark and the edge of the first test element group mark adjacent to the first test element group mark in the first cutting channel region. There is a second gap between the edge of the second test element group mark and the edge of the second test element group mark adjacent to the second test element group mark in the first cutting channel region. The first gap a satisfies: a≥0.5μm, and the width d1 of the first test element group mark and the width D1 of the first cutting channel region satisfy the following relationship: Among them, λ1 ranges from 80% to 85%.

9. The manufacturing method according to claim 8, characterized in that, The second gap b satisfies: b ≥ 0.5 μm.

10. The manufacturing method according to claim 8, characterized in that, The width d2 of the second test element group mark and the width D1 of the first cutting channel region satisfy the following relationship: Among them, λ2 ranges from 80% to 85%.

11. An exposure method, characterized in that, include: Provide a wafer comprising multiple exposure regions arranged in an array; The wafer is exposed using a photomask as described in any one of claims 1-7 to form an exposure pattern in each of the exposure areas.

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