A wafer thinning processing method, device, equipment and medium

Abstract

The application provides a wafer thinning processing method, device, equipment and medium, wherein the method comprises: obtaining the thickness of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning processing compensation amount; generating a first machine file according to the thickness of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed and the first thinning processing compensation amount; controlling the thinning machine to perform thinning processing on the wafer to be processed according to the first machine file to obtain a target wafer; measuring the thickness of the target wafer and updating the first thinning processing compensation amount according to the thickness of the target wafer and the first target thickness value. The application achieves the effect of updating the compensation amount in real time and improving the accuracy of wafer thinning by detecting the thickness of the wafer to be processed and updating the first thinning processing compensation amount in real time.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer manufacturing, in particular to a wafer thinning processing method, device, equipment and medium. BACKGROUND

[0002] In the semiconductor manufacturing process, the accuracy of the thinning machine will drift over time, and the removal amount needs to be compensated accordingly.

[0003] Currently, the determination of the compensation amount is maintained and calculated by manual, which lacks real-time performance, especially for large batch continuous wafer thinning processing, which will cause the accuracy of the thinning processing to decrease significantly over time. SUMMARY

[0004] Therefore, the present application aims to provide a wafer thinning processing method, device, equipment and medium, which can detect the thickness of the wafer to be processed and update the first thinning processing compensation amount in real time, solve the problem that the determination of the compensation amount is maintained and calculated by manual in the prior art, which lacks real-time performance, especially for large batch continuous wafer thinning processing, which will cause the accuracy of the thinning processing to decrease significantly over time, and achieve the effect of updating the compensation amount in real time and improving the accuracy of wafer thinning.

[0005] In a first aspect, an embodiment of the present application provides a wafer thinning processing method, which comprises: obtaining a thickness value of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed, and a first thinning processing compensation amount; generating a first machine file according to the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning processing compensation amount, the first machine file being used to instruct a thinning machine to perform thinning processing on the wafer; controlling the thinning machine to perform thinning processing on the wafer to be processed according to the first machine file to obtain a target wafer; measuring the thickness of the target wafer, and updating the first thinning processing compensation amount according to the thickness value of the target wafer and the first target thickness value.

[0006] Optionally, the method further comprises: determining whether the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is greater than a first target value; if the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is greater than the first target value, determining whether the difference between the thickness value of the target wafer and the first target thickness value is negative; if the difference between the thickness value of the target wafer and the first target thickness value is negative, determining that the target wafer is a defective product; if the difference between the thickness value of the target wafer and the first target thickness value is not negative, re-performing the thinning process on the wafer so that the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is less than or equal to the first target value.

[0007] Optionally, a plurality of to-be-processed wafer thickness measurement points are arranged at a plurality of preset positions of the to-be-processed wafer, and the method further comprises: calculating the absolute value of the difference between the thickness value of each to-be-processed wafer thickness measurement point and a preset standard to-be-processed wafer thickness value; determining whether the absolute value of the difference between the thickness value of each to-be-processed wafer thickness measurement point and the preset standard to-be-processed wafer thickness value is greater than a fourth target value; determining whether the number of to-be-processed wafer thickness measurement points whose absolute value of the difference between the thickness value and the preset standard to-be-processed wafer thickness value is greater than the fourth target value is greater than a third target value; if yes, determining that the to-be-processed wafer is a defective product; and if no, determining the final removal amount of each to-be-processed wafer thickness measurement point according to the thickness value of each to-be-processed wafer thickness measurement point, the first target thickness value and the first thinning process compensation amount.

[0008] Optionally, the method further comprises: determining whether there is a to-be-processed wafer thickness measurement point whose absolute value of the final removal amount is greater than a sixth target value; if there is a to-be-processed wafer thickness measurement point whose absolute value of the final removal amount is greater than the sixth target value, determining that the to-be-processed wafer is a defective product; and if there is no to-be-processed wafer thickness measurement point whose absolute value of the final removal amount is greater than the sixth target value, performing the thinning process on the to-be-processed wafer according to the final removal amount of each to-be-processed wafer thickness measurement point.

[0009] Optionally, the first thinning process compensation amount is updated by: calculating the difference between the thickness value of the target wafer and the first target thickness value; calculating a second thinning process compensation amount according to the first thinning process compensation amount and the difference between the thickness value of the target wafer and the first target thickness value based on an exponentially weighted average moving model; deleting the first thinning process compensation amount; and determining the second thinning process compensation amount as the first thinning process compensation amount.

[0010] Optionally, the method further comprises: determining whether an absolute value of a difference between the second thinning processing compensation amount and the first thinning processing compensation amount is greater than a fifth target value; if the absolute value of the difference between the second thinning processing compensation amount and the first thinning processing compensation amount is greater than the fifth target value, stopping the operation of the thinning machine and maintaining the offset amount of the thinning machine to reduce the offset amount of the thinning machine.

[0011] Optionally, the method further comprises: determining whether an absolute value of the updated first thinning processing compensation amount is greater than a second target value; if the updated first thinning processing compensation amount is greater than the second target value, stopping the operation of the thinning machine and maintaining the offset amount of the thinning machine to reduce the offset amount of the thinning machine.

[0012] In a second aspect, the embodiments of the present application further provide a wafer thinning processing device, the device comprising:

[0013] a data acquisition module, configured to acquire a thickness value of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed, and a first thinning processing compensation amount;

[0014] a machine file generation module, configured to generate a machine file according to the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning processing compensation amount, the machine file being used to instruct a thinning machine to perform thinning processing on the wafer;

[0015] a thinning processing module, configured to control the thinning machine to perform thinning processing on the wafer to be processed according to the machine file to obtain a target wafer;

[0016] a first thinning processing compensation amount updating module, configured to measure a thickness of the target wafer, and update the first thinning processing compensation amount according to the thickness value of the target wafer and the first target thickness value.

[0017] In a third aspect, the embodiments of the present application further provide an electronic device, comprising: a processor, a memory and a bus, the memory stores machine readable instructions executable by the processor, when the electronic device is running, the processor and the memory communicate through the bus, and the machine readable instructions are executed by the processor to perform the steps of the wafer thinning processing method as described above.

[0018] In a fourth aspect, the embodiments of the present application further provide a computer readable storage medium, the computer readable storage medium stores a computer program, and the computer program is executed by a processor to perform the steps of the wafer thinning processing method as described above.

[0019] The wafer thinning processing method, device, equipment and medium provided by the embodiment of the present application can solve the problem that the compensation amount is determined by manual maintenance and calculation in the prior art, and the real-time performance is poor, especially for large batch continuous wafer thinning processing, which can cause the accuracy of the thinning processing to decrease significantly over time, by detecting the thickness of the wafer to be processed in real time and updating the first thinning processing compensation amount, so that the compensation amount is updated in real time, and the accuracy of wafer thinning is improved.

[0020] In order to make the above objectives, characteristics and advantages of the present application more obvious and easy to understand, the following preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0022] Figure 1 A flowchart of a wafer thinning processing method provided by an embodiment of the present application;

[0023] Figure 2 A flowchart of another wafer thinning processing method provided by an embodiment of the present application;

[0024] Figure 3 A structural schematic diagram of a wafer thinning processing device provided by an embodiment of the present application;

[0025] Figure 4 A structural schematic diagram of an electronic device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0026] In order to make the objectives, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely in the following with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments of the present application, every other embodiment obtained by those skilled in the art without creative labor belongs to the scope of the present application.

[0027] Firstly, the application scenarios applicable to the present application are introduced. The present application can be applied to the field of wafer manufacturing technology.

[0028] It is found through research that in the semiconductor manufacturing process, the accuracy of the thinning machine will drift over time, and the removal amount needs to be compensated accordingly.

[0029] Currently, the determination of the compensation amount is maintained and calculated manually, which lacks real-time performance, especially for large-scale continuous wafer thinning processing, which will cause the accuracy of the thinning processing to decrease significantly over time.

[0030] Based on this, the embodiments of the present application provide a wafer thinning processing method, device, equipment and medium, which can solve the problem of the determination of the compensation amount being maintained and calculated manually, which lacks real-time performance, especially for large-scale continuous wafer thinning processing, which will cause the accuracy of the thinning processing to decrease significantly over time, by real-time detection of the thickness of the wafer to be processed and updating of the first thinning processing compensation amount, achieving the effect of updating the compensation amount in real time and improving the accuracy of wafer thinning.

[0031] Please refer to Figure 1 , Figure 1 The flowchart of a wafer thinning processing method provided by the embodiments of the present application is shown in FIG. 1. Figure 1 As shown in FIG. 1, the wafer thinning processing method provided by the embodiments of the present application comprises the following steps.

[0032] S101, obtaining the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning processing compensation amount.

[0033] The initial value of the first thinning processing compensation amount is zero.

[0034] For example, the first target thickness value can be 670 microns, the thickness of the wafer to be processed should be 775 microns, and an error value of plus or minus 25 microns is allowed under normal working conditions.

[0035] The first thinning processing compensation amount is updated according to the thickness value of the wafer after the last thinning processing by the thinning machine and the first target thickness value, and the error of the wafer after each thinning processing is used to update the first thinning processing compensation amount, thereby improving the accuracy of wafer thinning.

[0036] Before the wafer to be processed is thinned, the thickness of the wafer to be processed needs to be detected to avoid abnormality of the thinning machine due to excessive error of the wafer to be processed.

[0037] Optionally, a plurality of wafer thickness measurement points are arranged at a plurality of preset positions of the wafer to be processed.

[0038] The method further comprises: calculating an absolute value of a difference between the thickness value of each to-be-processed wafer thickness measurement point and the preset standard to-be-processed wafer thickness value; determining whether the absolute value of the difference between the thickness value of each to-be-processed wafer thickness measurement point and the preset standard to-be-processed wafer thickness value is greater than a fourth target value; determining whether the number of to-be-processed wafer thickness measurement points whose absolute value of the difference between the thickness value and the preset standard to-be-processed wafer thickness value is greater than the fourth target value is greater than a third target value; if yes, determining that the to-be-processed wafer is a defective product; and if no, determining a final removal amount of each to-be-processed wafer thickness measurement point according to the thickness value of each to-be-processed wafer thickness measurement point, the first target thickness value and the first compensation amount of the thinning processing.

[0039] For example, the to-be-processed wafer is provided with 360 to-be-processed wafer thickness measurement points, the preset standard to-be-processed wafer thickness value can be 670 microns, the fourth target value is a thickness error value of each measurement point, and the fourth target value can be 25 microns. The third target value can be the number of points allowed to exceed the error value, and the third target value can be 20 points.

[0040] For example, when 6 to-be-processed wafer thickness measurement points of 360 to-be-processed wafer thickness measurement points of a to-be-processed wafer have a thickness value less than 645 microns, and 16 to-be-processed wafer thickness measurement points have a thickness value greater than 695 microns, the number of to-be-processed wafer thickness measurement points whose absolute value of the difference from the preset standard to-be-processed wafer thickness value of 670 microns is greater than 25 microns is 22, which exceeds the third target value. At this time, it is determined that the uniformity of the thickness of the to-be-processed wafer does not meet the thinning requirement, and the to-be-processed wafer should be determined as a defective product.

[0041] Optionally, the method further comprises: determining whether there is a to-be-processed wafer thickness measurement point whose absolute value of the final removal amount is greater than a sixth target value; if there is a to-be-processed wafer thickness measurement point whose absolute value of the final removal amount is greater than the sixth target value, determining that the to-be-processed wafer is a defective product; and if there is no to-be-processed wafer thickness measurement point whose absolute value of the final removal amount is greater than the sixth target value, performing the thinning processing on the to-be-processed wafer according to the final removal amount of each to-be-processed wafer thickness measurement point.

[0042] For example, the sixth target value can be 100 microns, which is the maximum wafer thinning amount of the thinning machine for twice wafer thinning.

[0043] Optionally, the method further comprises: determining whether the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is greater than a first target value; if the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is greater than the first target value, determining whether the difference between the thickness value of the target wafer and the first target thickness value is negative; if the difference between the thickness value of the target wafer and the first target thickness value is negative, determining that the target wafer is a defective product; if the difference between the thickness value of the target wafer and the first target thickness value is not negative, re-thinning the wafer so that the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is less than or equal to the first target value.

[0044] Here, the first target value can be 30 microns, when the difference between the thickness value of the target wafer and the first target thickness value is negative 50 microns, it is determined that the target wafer is a defective product; when the difference between the thickness value of the target wafer and the first target thickness value is positive 50 microns, the target wafer can be re-thinned.

[0045] For example, the first target thickness value is 675 microns, the first target value is 30 microns, if the average thickness of the target wafer is 710 microns, and the difference between the first target thickness value is more than 30 microns, the wafer needs to be separated from the mother batch and re-thinned.

[0046] S102, generating a first machine file according to the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning processing compensation amount, the first machine file being used to instruct the thinning machine to thin the wafer.

[0047] For example, when the cumulative unqualified point number of the wafer to be processed is less than 20, the final removal amount corresponding to each measurement point of the wafer is calculated according to the thickness value of each measurement point, the first target thickness value, and the first thinning processing compensation amount.

[0048] Determining whether the final removal amount corresponding to each measurement point of the wafer to be processed is within the allowed removal amount safety range; if the removal amount of each measurement point of the wafer to be processed exceeds the allowed removal amount safety range, it is determined that the wafer to be processed is a defective product; if the removal amount of each measurement point of the wafer to be processed is within the allowed removal amount safety range, the wafer to be processed is thinned.

[0049] For example, if the measured thickness value of 350 points of the 360 points of the wafer to be processed is within the range of 775 microns + / - 25 microns, and the calculated final removal amount of these points is within the removal amount safety range, the final removal amount data of the 350 points is retained.

[0050] In this way, the final removal data of the 350 points can be used to generate a machine file in a machine file format.

[0051] S103, controlling the thinning machine to perform a thinning process on the wafer to be processed according to the machine file, to obtain a target wafer.

[0052] S104, measuring the thickness of the target wafer, and updating the first thinning process compensation amount according to the thickness of the target wafer and the first target thickness value.

[0053] Specifically, please refer to Figure 2 , Figure 2 Another wafer thinning process method provided by the embodiment of the present application is shown in the flowchart. Figure 2 The wafer thinning process method provided by the embodiment of the present application includes:

[0054] S201, calculating the difference between the thickness of the target wafer and the first target thickness value.

[0055] S202, calculating a second thinning process compensation amount based on an exponentially weighted moving average model, according to the first thinning process compensation amount of the thinning machine and the difference between the thickness of the target wafer and the first target thickness value.

[0056] In this step, the exponentially weighted moving average model (EWMA model) is a model that gives different weights according to the distance of historical data from the current time, and the closer to the present, the greater the weight.

[0057] S203, deleting the first thinning process compensation amount, and determining the second thinning process compensation amount as the first thinning process compensation amount.

[0058] Optionally, the method further includes: judging whether the absolute value of the difference between the second thinning process compensation amount and the first thinning process compensation amount is greater than a fifth target value; if the absolute value of the difference between the second thinning process compensation amount and the first thinning process compensation amount is greater than the fifth target value, stopping the operation of the thinning machine, and maintaining the offset of the thinning machine to reduce the offset of the thinning machine.

[0059] Here, the fifth target value is used to indicate the maximum single thinning offset, and when the absolute value of the difference between the second thinning process compensation amount and the first thinning process compensation amount is greater than the fifth target value, it means that the offset of the thinning machine is abnormal and needs to be maintained and repaired.

[0060] Optionally, it is judged whether the absolute value of the updated first thinning processing compensation amount is greater than a second target value; if the updated first thinning processing compensation amount is greater than the second target value, the operation of the thinning machine is stopped, and the offset of the thinning machine is maintained to reduce the offset of the thinning machine.

[0061] Here, the second target value is used to indicate the upper limit of the compensation amount of the thinning machine, and when the compensation amount of the thinning machine exceeds the second target value, the thinning machine needs to be maintained.

[0062] The wafer thinning processing method provided by the embodiment of the present application can solve the problem that the compensation amount is determined by manual maintenance and calculation in the prior art, and lacks real-time performance, especially for large-batch continuous wafer thinning processing, which will cause the accuracy of the wafer thinning processing to decrease significantly over time, by detecting the thickness of the wafer to be processed and updating the first thinning processing compensation amount in real time, so as to update the compensation amount in real time and improve the accuracy of wafer thinning.

[0063] Based on the same inventive concept, the embodiment of the present application also provides a wafer thinning processing device corresponding to the wafer thinning processing method. Since the principle of solving the problem of the device in the embodiment of the present application is similar to the wafer thinning processing method described above, the implementation of the device can be referred to the implementation of the method, and the repeated parts will not be described here.

[0064] Please refer to Figure 3 , Figure 3 The wafer thinning processing device provided by the embodiment of the present application is a structure schematic diagram. As shown in Figure 3 The wafer thinning processing device 300 comprises:

[0065] The data acquisition module 301 is configured to acquire the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning processing compensation amount.

[0066] The machine file generation module 302 is configured to generate a machine file according to the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning processing compensation amount, wherein the machine file is used to instruct the thinning machine to perform wafer thinning processing.

[0067] The thinning processing module 303 is configured to control the thinning machine to perform wafer thinning processing on the wafer to be processed according to the machine file to obtain a target wafer.

[0068] The first thinning processing compensation amount updating module 304 is configured to measure the thickness value of the target wafer, and update the first thinning processing compensation amount according to the thickness value of the target wafer and the first target thickness value.

[0069] The wafer thinning processing device provided by the embodiment of the present application can solve the problem that the compensation amount is determined by manual maintenance and calculation in the prior art, and the real-time performance is poor, especially for the continuous wafer thinning processing in large quantities, which can cause the accuracy of the wafer thinning to decrease obviously over time, and achieve the effect of updating the compensation amount in real time and improving the accuracy of wafer thinning.

[0070] Please refer to Figure 4 , Figure 4 The structure of the electronic device provided by the embodiment of the present application is shown in FIG. 4. As shown in FIG. 4, the electronic device 400 includes a processor 410, a memory 420 and a bus 430. Figure 4

[0071] The memory 420 stores machine readable instructions executable by the processor 410. When the electronic device 400 is running, the processor 410 and the memory 420 communicate through the bus 430. When the machine readable instructions are executed by the processor 410, the steps of the wafer thinning processing method in the method embodiments shown in FIG. 1 and FIG. 2 can be performed. For details, refer to the method embodiments, which will not be described here. Figure 1 Figure 2 The steps of the wafer thinning processing method in the method embodiments shown in FIG. 1 and FIG. 2 can be performed. For details, refer to the method embodiments, which will not be described here.

[0072] The embodiment of the present application also provides a computer readable storage medium, which stores a computer program. When the computer program is run by a processor, the steps of the wafer thinning processing method in the method embodiments shown in FIG. 1 and FIG. 2 can be performed. For details, refer to the method embodiments, which will not be described here. Figure 1 Figure 2 The steps of the wafer thinning processing method in the method embodiments shown in FIG. 1 and FIG. 2 can be performed. For details, refer to the method embodiments, which will not be described here.

[0073] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the above-described system, device and unit can refer to the corresponding process in the foregoing method embodiments, which will not be described here.

[0074] In the several embodiments provided by the present application, it should be understood that the disclosed system, device and method can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of the units is only a logical function division, and there can be another division manner in actual implementation. Also, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the units shown or discussed can be indirect coupling or communication connection through some interface, device or unit, and can be electrical, mechanical or other forms. ​​​

[0075] The units described as separate components may or may not be physically separate, and the components displayed as units may or may not be physical units, i.e., may be located in one place, or may be distributed to multiple network units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment scheme.

[0076] In addition, the functional units in each embodiment of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit.

[0077] If the functions are realized in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer readable storage medium executable by a processor. Based on this understanding, the technical solutions of the present application or the part of the present application that essentially contributes to the prior art or the part of the technical solutions can be embodied in the form of a software product, which is stored in a storage medium and includes a plurality of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various program code storage media.

[0078] Finally, it should be noted that: the above-described embodiments are only specific embodiments of the present application, used to illustrate the technical solutions of the present application, and not to limit them, the protection scope of the present application is not limited thereto, although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand: any skilled person in the art within the technical scope disclosed by the present application, they can still modify or easily think of changes to the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to part of the technical features; and these modifications, changes or replacements do not make the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and all should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A wafer thinning process, characterized in that, The method includes: Obtain the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning compensation amount; A first machine file is generated based on the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed, and the first thinning compensation amount. The first machine file is used to instruct the thinning machine to perform thinning processing on the wafer. The thinning machine is controlled to perform thinning processing on the wafer to be processed according to the first machine tool file to obtain the target wafer; The thickness of the target wafer is measured, and the first thinning compensation amount is updated based on the thickness value of the target wafer and the first target thickness value. The method further includes: Determine whether the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is greater than the first target value; If the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is greater than the first target value, then it is determined whether the difference between the thickness value of the target wafer and the first target thickness value is negative; If the difference between the thickness value of the target wafer and the first target thickness value is negative, then the target wafer is determined to be defective. If the difference between the thickness value of the target wafer and the first target thickness value is not negative, the wafer is thinned again so that the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is less than or equal to the first target value. The compensation amount for the first thinning treatment is updated in the following way: Calculate the difference between the thickness value of the target wafer and the thickness value of the first target wafer; Based on the exponentially weighted average moving average model, the second thinning compensation amount is calculated according to the first thinning compensation amount and the difference between the thickness value of the target wafer and the first target thickness value. The first thinning treatment compensation amount is deleted, and the second thinning treatment compensation amount is determined as the first thinning treatment compensation amount; Determine whether the absolute value of the difference between the second thinning treatment compensation amount and the first thinning treatment compensation amount is greater than the fifth target value; If the absolute value of the difference between the second thinning compensation amount and the first thinning compensation amount is greater than the fifth target value, then the operation of the thinning machine is stopped, and the offset of the thinning machine is maintained to reduce the offset of the thinning machine.

2. The method according to claim 1, characterized in that, Multiple wafer thickness measurement points are set at several preset locations on the wafer to be processed. The method further includes: Calculate the absolute value of the difference between the thickness value at each wafer thickness measurement point and the preset standard wafer thickness value; Determine whether the absolute value of the difference between the thickness value of each wafer thickness measurement point and the preset standard wafer thickness value is greater than the fourth target value; Determine whether the number of wafer thickness measurement points whose absolute value of the difference between the thickness value of the wafer thickness measurement point and the preset standard wafer thickness value is greater than the fourth target value is greater than the third target value. If so, then the wafer to be processed is determined to be defective; If not, the final removal amount for each wafer thickness measurement point is determined based on the thickness value of each wafer thickness measurement point, the first target thickness value, and the first thinning compensation amount.

3. The method according to claim 2, characterized in that, The method further includes: Determine if there are any wafer thickness measurement points where the absolute value of the final removal amount is greater than the sixth target value; If there is a wafer thickness measurement point where the absolute value of the final removal amount is greater than the sixth target value, then the wafer to be processed is determined to be defective. If there is no wafer thickness measurement point where the absolute value of the final removal amount is greater than the sixth target value, then the wafer to be processed is thinned according to the final removal amount of each wafer thickness measurement point.

4. The method according to claim 1, characterized in that, The method further includes: Determine whether the absolute value of the updated first thinning compensation is greater than the second target value; If the updated first thinning compensation amount is greater than the second target value, the operation of the thinning machine is stopped, and the offset of the thinning machine is maintained to reduce the offset of the thinning machine.

5. An electronic device, characterized in that, include: The device includes a processor, a memory, and a bus, wherein the memory stores machine-readable instructions executable by the processor, and when the electronic device is in operation, the processor communicates with the memory via the bus, and the processor executes the machine-readable instructions to perform the steps of the method as described in any one of claims 1 to 4.

6. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, performs the steps of the method as described in any one of claims 1 to 4.

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