Organometallic Compound, Precursor Composition Containing the Compound, and Method for Preparing Thin Film Using the Same

Abstract

The present invention relates to a chemical vapor deposition compound for depositing a thin film by chemical vapor deposition. Specifically, the present invention relates to an organometallic compound having excellent reactivity, volatility, and thermal stability applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD), a precursor composition containing the organometallic compound, a method for preparing a thin film using the precursor composition, and an organometallic-containing thin film prepared by the precursor composition.

Description

Technical Field

[0001] The present invention relates to a vapor deposition compound for depositing a thin film by vapor deposition. Specifically, the present invention relates to a novel organometallic compound having excellent reactivity, volatility, and thermal stability, a precursor composition containing the organometallic compound, a method for preparing a thin film using the precursor composition, and a metal-containing thin film prepared from the precursor composition, which can be applied to atomic layer deposition or chemical vapor deposition. Background Art

[0002] Organometallic precursor thin films can form metal thin films, oxide thin films, and nitride thin films with different compositions and are widely used in the semiconductor field. Methods for forming thin films include chemical vapor deposition (CVD) and atomic layer deposition (ALD). As semiconductor materials become more highly integrated and ultra-fine, the necessity of atomic layer deposition (ALD), which has advantages such as uniform preparation of thin films, adjustable thin film thickness, and high step coverage, is being emphasized. In this case, precursors for atomic layer deposition (ALD) also play a quite important role, and high volatility and thermal stability are required.

[0003] Among organometallic metal thin films, in particular, manganese metal thin films are used as materials for organic semiconductor electrodes and ferromagnetic electrodes. Manganese oxide thin films can be used for electrode materials, electrochemical capacitors, soft magnetic materials, perovskite materials, solid electrolyte lithium-based batteries, catalysts, etc. In addition, manganese nitride thin films are a new generation of materials that can be used as a copper diffusion barrier film and a copper adhesion layer in the back-end-of-line copper connection material for semiconductor material wiring, and various applications such as catalysts, batteries, memory elements, displays, and sensors are expected.

[0004] Among the currently known representative organometallic precursors, examples of manganese (Mn) precursors include carbonyl compounds Mn2(CO) 10, cyclopentadiene compounds such as Mn(Cp)2, β-diketone compounds such as Mn(tmhd)3, amidine compounds such as Mn(tBu-Me-amd)2, etc. Most of the above compounds are solid compounds, and have high melting points and low stability. These compounds may also cause impurity contamination in the thin film during the thin film deposition process. In addition, the compound Mn(MeCp)(CO)3 composed of two ligands is a liquid compound, but has the disadvantages of high boiling point and low stability. In addition, the melting point of the compound Mn(hfa)2(tmeda) (which introduces an electron donor ligand to fill the coordination number) is much lower than that of the β-diketone compound, but the disadvantage of the compound Mn(hfa)2(tmeda) is that it is a solid compound and has a high deposition temperature. As described above, it is necessary to develop a new type of organometallic precursor to improve the disadvantages of the existing precursors. Summary of the Invention

[0005] Technical Problems to be Solved by the Invention

[0006] The object of the present invention is to provide an organometallic precursor compound for thin film deposition having excellent reactivity, thermal stability and volatility, so as to solve the problems of the existing organometallic precursors as described above.

[0007] Another object of the present invention is to provide a method for preparing a thin film using the organometallic precursor compound and a thin film containing an organometal.

[0008] However, the problems to be solved by the present invention are not limited to the above problems, and those of ordinary skill in the art to which the present invention pertains will clearly understand other unmentioned problems from the following description.

[0009] Means for Solving the Technical Problems

[0010] The present invention intends to develop a new type of organometallic compound having a low melting point and excellent volatility in a low temperature range, and a precursor composition containing the organometallic compound by introducing an imidazole ligand into an alkoxy ligand having excellent reactivity and volatility. In addition, in the present invention, a new type of organometallic precursor composed of a combination of an alkoxy group and an imidazole ligand is to be provided. Furthermore, the present invention intends to provide a new type of organometallic precursor for modifying the substituents of the alkoxy ligand.

[0011] In one aspect of the present invention, there is provided an organometallic compound represented by the following formula 1:

[0012]

[0013] In Formula 1, M is manganese (Mn), copper (Cu), cobalt (Co), iron (Fe), or nickel (Ni); a is 2; b is 1 or 2 (provided that b is not 2 when M is Co); R1 and R2 are each independently hydrogen, or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; R3 is -OR4 or -NR5R6; R4 is hydrogen, or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; and R5 and R6 are each independently hydrogen, a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms, or a straight-chain or branched-chain alkylsilyl group having 1 to 6 carbon atoms.

[0014] In yet another aspect of the present invention, there is provided a precursor composition for vapor deposition comprising the organometallic compound.

[0015] In another aspect of the present invention, there is provided a method for preparing a thin film, wherein the method comprises the step of introducing the precursor composition for vapor deposition into a chamber.

[0016] In still another aspect of the present invention, there is provided an organometallic-containing thin film prepared by using the precursor composition for vapor deposition.

[0017] Effects of the Invention

[0018] The novel organometallic compound and the precursor composition for vapor deposition according to the present invention are solid compounds or low-viscosity liquid compounds, which have excellent volatility, and thus can perform uniform thin film deposition.

[0019] In addition, the precursor composition for vapor deposition according to the present invention has high thermal stability and reactivity, and thus can ensure excellent thin film physical properties, thickness, and step coverage.

[0020] The physical properties as described above provide an organometallic precursor applicable to atomic layer deposition and chemical vapor deposition, and contribute to excellent thin film properties. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Thermogravimetric differential thermal analysis (TG-DTA) graph of the Mn(MeMeIz)2( sec (BuO)2 compound of Example 1 of the present invention.

[0022] Figure 2 Thermogravimetric differential thermal analysis (TG-DTA) graph of the Mn(MeEtIz)2( sec (BuO)2 compound of Example 2 of the present invention.

[0023] Figure 3 Thermogravimetric differential thermal analysis (TG-DTA) graph of the Mn(MePrIz)2( secThermogravimetric and differential thermal analysis (TGDTA) diagram of the (BuO)2 compound.

[0024] Figure 4 Thermogravimetric and differential thermal analysis (TGDTA) diagram of the Mn(MeMeIz)2(btsa)2 compound of Example 4 of the present invention.

[0025] Figure 5 Thermogravimetric and differential thermal analysis (TGDTA) diagram of the Mn(MeEtIz)2(btsa)2 compound of Example 5 of the present invention.

[0026] Figure 6 Thermogravimetric and differential thermal analysis (TGDTA) diagram of the Mn(MePrIz)2(btsa)2 compound of Example 6 of the present invention. Detailed implementation mode

[0027] In the following description, examples and embodiments of the present invention will be described in detail to make it easy for those of ordinary skill in the art to which the present invention pertains to implement. However, the present invention can be implemented in various different forms and is not limited to the examples and embodiments described in this specification.

[0028] The present invention relates to a novel organometallic compound that can be used for atomic layer deposition or chemical vapor deposition and has excellent reactivity, volatility, and thermal stability, a precursor composition containing the organometallic compound, a method for preparing a thin film using the precursor composition, and an organometallic-containing thin film prepared from the precursor composition.

[0029] As used herein, the term "alkyl" includes straight-chain or branched-chain alkyls having 1 to 4 carbon atoms and all possible isomers thereof. Examples of alkyls may include, but are not limited to, methyl (Me), ethyl (Et), n-propyl ( n Pr), isopropyl ( i Pr), n-butyl ( n Bu), tert-butyl ( t Bu), isobutyl ( i Bu), sec-butyl ( sec Bu) and their isomers, etc.

[0030] As used herein, the term "Iz" refers to the abbreviation of "imidazole", and the term "btsa" refers to the abbreviation of "bis(trimethylsilyl)amide".

[0031] In one aspect of the present invention, there is provided an organometallic compound represented by the following formula 1:

[0032]

[0033] Preferably, in Formula 1, M is manganese (Mn), copper (Cu), cobalt (Co), iron (Fe), or nickel (Ni); a is 2; b is 1 or 2 (provided that b is not 2 when M is cobalt (Co)); R1 and R2 are each independently hydrogen, or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; R3 is -OR4 or -NR5R6; R4 is hydrogen, or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; and R5 and R6 are each independently hydrogen, a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms, or a straight-chain or branched-chain alkylsilyl group having 1 to 6 carbon atoms.

[0034] In an example of the present invention, more preferably, R1, R2, and R4 may each independently be any one selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, and tert-butyl, but not limited thereto.

[0035] In an example of the present invention, more preferably, R5 and R6 may each independently be any one selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, methylsilyl, dimethylsilyl, trimethylsilyl, and triethylsilyl, but not limited thereto.

[0036] In an example of the present invention, the organometallic compound may be a liquid or a solid at room temperature, preferably a liquid, but not limited thereto.

[0037] In an example of the present invention, the compound represented by the above Formula 1 may be an M(Imidazole)(Alkoxide) compound characterized by being represented by the following Formula 2:

[0038]

[0039] Preferably, in the above Formula 2, M is manganese (Mn), copper (Cu), iron (Fe), or nickel (Ni); R1, R2, and R4 are each independently hydrogen, or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms.

[0040] For example, more preferably, R1, R2, and R4 are each independently any one selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, and tert-butyl.

[0041] In an example of the present invention, the organometallic compound represented by Formula 2 can be prepared by Process 1 shown below:

[0042]

[0043] In the above process 1, M is manganese (Mn), copper (Cu), iron (Fe), or nickel (Ni); X is a halogen element (such as chlorine, bromine, or iodine); R1, R2, and R4 are each independently hydrogen or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms.

[0044] Among the organic compounds represented by Formula 2, examples of the manganese(imidazole)(alcoholate) compound in which the central metal (M) is manganese may include, but are not limited to, the following manganese compounds:

[0045] Di-sec-butoxy-bis(1,3-dimethyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeMeIz)2( sec BuO)2]);

[0046] Di-sec-butoxy-bis(1-ethyl-3-methyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeEtIz)2( sec BuO)2]);

[0047] Di-sec-butoxy-bis(1-methyl-3-propyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MePrIz)2( sec BuO)2]).

[0048] In one example of the present invention, the compound represented by Formula 1 may be an M(imidazole)(amide) compound characterized by being represented by the following Formula 3:

[0049]

[0050] Preferably, in the above Formula 3, M is manganese (Mn), copper (Cu), iron (Fe), or nickel (Ni); R1 and R2 are each independently hydrogen or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; and R5 and R6 are each independently hydrogen, a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms, or a straight-chain or branched-chain alkylsilyl group having 1 to 6 carbon atoms.

[0051] For example, more preferably, each of R1 and R2 is independently any one selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, and tert-butyl; and more preferably, each of R5 and R6 is independently any one selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, methylsilyl, dimethylsilyl, trimethylsilyl, and triethylsilyl.

[0052] In one example of the present invention, the organometallic compound represented by the above formula 3 can be prepared by Process 2 represented as follows:

[0053]

[0054] In the above Process 2, M is manganese (Mn), copper (Cu), iron (Fe), or nickel (Ni); X is a halogen element (such as chlorine, bromine, or iodine); each of R1 and R2 is independently hydrogen or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; and each of R5 and R6 is independently hydrogen, a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms, or a straight-chain or branched-chain alkylsilyl group having 1 to 6 carbon atoms.

[0055] Among the organic compounds represented by the above formula 3, examples of the manganese (imidazole)(amide) (Mn(Imidazole)(amide)) compound in which the central metal (M) is manganese may include, but are not limited to, the following manganese compounds:

[0056] Bis(bis(trimethylsilyl)amino)-bis(1,3-dimethyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeMeIz)2(btsa)2];

[0057] Bis(bis(trimethylsilyl)amino)-bis(1-ethyl-3-methyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeEtIz)2(btsa)2];

[0058] Bis(bis(trimethylsilyl)amino)-bis(1-methyl-3-propyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MePrIz)2(btsa)2].

[0059] In another aspect of the present invention, there is provided a precursor composition for vapor deposition comprising the organometallic compound.

[0060] In another aspect of the present invention, there is provided a method for preparing a thin film, which method comprises the step of introducing the precursor composition for vapor deposition into a chamber. The step of introducing the vapor deposition precursor into the chamber may include a physical adsorption step, a chemical adsorption step, or both a physical and a chemical adsorption step.

[0061] In still another aspect of the present invention, there is provided a metal-organic thin film prepared by using the precursor composition for vapor deposition.

[0062] In the precursor for vapor deposition, the method for preparing a thin film, and the metal-organic thin film according to the present invention, all descriptions of the organometallic compound are applicable, and the detailed descriptions of the repeated parts have been deleted, and they are still applicable even without the deleted descriptions.

[0063] In an example of the present invention, the method for preparing a thin film may include both atomic layer deposition (ALD) of sequentially introducing the precursor for vapor deposition and a reaction gas of the present invention and chemical vapor deposition (CVD) of continuously injecting the precursor for vapor deposition and a reaction gas of the present invention to form a thin film.

[0064] More specifically, the deposition method may include, but is not limited to, metal organic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), pulsed chemical vapor deposition (P-CVD), plasma enhanced atomic layer deposition method (PE-ALD), or a combination thereof.

[0065] In one example of the present invention, the thin film preparation method may further include a step of injecting any one or more selected from the group consisting of hydrogen (H2), a compound (or mixture) containing an oxygen (O) atom, a compound (or mixture) containing a nitrogen (N) atom, or a compound (or mixture) containing a silicon (Si) atom as a reaction gas.

[0066] Specifically, one or more selected from the group consisting of water (H2O), oxygen (O2), hydrogen (H2), ozone (O3), ammonia (NH3), hydrazine (N2H4), or silane may be used as the reaction gas, but are not limited thereto.

[0067] Specifically, in order to deposit an organometallic oxide thin film, water (H2O), oxygen (O2), and ozone (O3) may be used as the reaction gas, and in order to deposit an organometallic nitride thin film, ammonia gas (NH3) or hydrazine (N2H4) may be used as the reaction gas.

[0068] In addition, in order to deposit a metal-organic metal thin film, hydrogen (H2) may be used as the reaction gas, and in order to deposit an organometallic silicide (MnSi or MnSi2) thin film, a silane compound may be used as the reaction gas.

[0069] The thin film prepared by the thin film preparation method of the present invention may be, but is not limited to, an organometallic metal thin film, an organometallic oxide thin film, an organometallic nitride thin film, or an organometallic silicide thin film.

[0070] In the following description, the present invention will be described in more detail by way of examples. However, the following examples are used to more specifically explain the present invention, and the scope of the present invention is not limited by the following examples.

[0071] Example 1: Synthesis of Mn(MeMeIz)2( sec BuO)2

[0072] Manganese chloride (MnCl2, 1 equivalent, 13 g), 1,3-dimethylimidazolium chloride (2 equivalents), potassium 2-butoxide (4 equivalents), and tetrahydrofuran (THF) were added to a Schlenk flask, and the mixture was stirred overnight at room temperature. Then, when the reaction was completed, vacuum filtration was performed to remove the solvent. The resulting compound was distilled under reduced pressure at 70 °C and 0.3 Torr to obtain an orange liquid.

[0073] Figure 1 Shows the Mn(MeMeIz)2 represented by the following formula 2-1 synthesized in Example 1sec Thermogravimetric and differential thermal analysis results of the (BuO)₂ compound.

[0074]

[0075] Example 2: Synthesis of Mn(MeEtIz)₂( sec Synthesis of (BuO)₂

[0076] Manganese chloride (MnCl₂, 1 equivalent, 13 g), 1-ethyl-3-methylimidazolium chloride (2 equivalents), potassium 2-butoxide (4 equivalents), and tetrahydrofuran (THF) were added to a Schlenk flask, and the mixture was refluxed overnight. Then, when the reaction was complete, the temperature was lowered to room temperature and the solvent was removed by vacuum filtration. The resulting compound was distilled under reduced pressure at 70 °C and 0.2 Torr to obtain an orange liquid.

[0077] Figure 2 Shows the thermogravimetric and differential thermal analysis results of the Mn(MeEtIz)₂( sec (BuO)₂ compound synthesized in Example 2.

[0078]

[0079] Example 3: Synthesis of Mn(MePrIz)₂( sec Synthesis of (BuO)₂

[0080] Manganese chloride (MnCl₂, 1 equivalent, 13 g), 1-methyl-3-propylimidazolium chloride (2 equivalents), potassium 2-butoxide (4 equivalents), and tetrahydrofuran (THF) were added to a Schlenk flask, and the mixture was stirred at room temperature overnight. Then, when the reaction was complete, the solvent was removed by vacuum filtration. The resulting compound was distilled under reduced pressure at 65 °C and 0.2 Torr to obtain an orange liquid.

[0081] Figure 3 Shows the thermogravimetric and differential thermal analysis results of the Mn(MePrIz)₂( sec (BuO)₂ compound synthesized in Example 3.

[0082]

[0083] Example 4: Synthesis of Mn(MeMeIz)2(btsa)2

[0084] Manganese chloride (MnCl2, 1 equivalent, 3 g), 1,3-dimethylimidazolium chloride (2 equivalents), potassium bis-trimethylsilyl amide (4 equivalents), and tetrahydrofuran (THF) were added to a Schlenk flask, and the mixture was refluxed overnight. Then, when the reaction was complete, the temperature was lowered to room temperature, and vacuum filtration was performed to remove the solvent. The resulting compound was sublimed at 90 °C and 1 Torr to obtain a yellow-brown solid.

[0085] Figure 4 The thermogravimetric and differential thermal analysis results of the Mn(MeMeIz)2(btsa)2 compound represented by Formula 3-1 synthesized in Example 4 are shown.

[0086]

[0087] Example 5: Synthesis of Mn(MeEtIz)2(btsa)2

[0088] Manganese chloride (MnCl2, 1 equivalent, 3 g), 1-ethyl-3-methylimidazolium chloride (2 equivalents), potassium bis-trimethylsilyl amide (4 equivalents), and tetrahydrofuran (THF) were added to a Schlenk flask, and the mixture was refluxed overnight. Then, when the reaction was complete, the temperature was lowered to room temperature, and vacuum filtration was performed to remove the solvent. The resulting compound was distilled at 80 °C and 0.4 Torr to obtain an orange liquid.

[0089] Figure 5 The thermogravimetric and differential thermal analysis results of the Mn(MeEtIz)2(btsa)2 compound represented by Formula 3-2 synthesized in Example 5 are shown.

[0090]

[0091] Example 6: Synthesis of Mn(MePrIz)2(btsa)2

[0092] Manganese chloride (MnCl2, 1 equivalent, 3 g), 1-methyl-3-propylimidazolium chloride (2 equivalents), potassium bis-trimethylsilylamide (4 equivalents), and tetrahydrofuran (THF) were added to a Schlenk flask, and the mixture was refluxed overnight. Then, when the reaction was completed, the temperature was lowered to room temperature, and vacuum filtration was performed to remove the solvent. The resulting compound was distilled at 60 °C and 0.4 Torr to obtain an orange liquid.

[0093] Figure 6 The thermogravimetric and differential thermal analysis results of the Mn(MePrIz)2(btsa)2 compound synthesized in Example 6 and represented by Formula 3-3 are shown.

[0094]

[0095] Preparation Example 1: Preparation of a Manganese-Containing Thin Film Using Atomic Layer Deposition (ALD)

[0096] A manganese thin film was prepared by alternately supplying any one of the novel manganese precursors in Examples 1 to 6 and a reaction gas containing oxygen (O2) onto a substrate. After supplying the precursor and the reaction gas, argon gas was supplied as a purge gas to purge the precursor and the reaction gas remaining in the deposition chamber. The supply time of the precursor was adjusted to 8 seconds to 15 seconds, and the supply time of the reaction gas was also adjusted to 8 seconds to 15 seconds. The pressure in the deposition chamber was adjusted to 1 Torr to 20 Torr, and the deposition temperature was adjusted to 80 °C to 300 °C.

[0097] Existing organometallic compounds have the disadvantage of being unstable at room temperature, making it difficult to use them as precursors. In contrast, the novel manganese precursor containing an imidazole ligand according to the present invention has the advantages of relatively high thermal stability and high reactivity with an oxidizing reaction gas.

[0098] In addition, uniform thin film deposition can be achieved by the novel organometallic precursor containing an imidazole ligand of the present invention, thereby ensuring excellent thin film physical properties, thickness, and step coverage.

[0099] The scope of the present invention is defined by the scope of the claims to be described later, rather than by the above detailed description, and should be interpreted as covering all changes or variations derived from the meaning, scope, and equivalent concepts of the scope of the claims of the present invention.

[0100] Industrial Applicability

[0101] The present invention relates to a vapor deposition compound capable of thin film deposition by vapor deposition. Specifically, it can be applied to atomic layer deposition or chemical vapor deposition and has excellent reactivity, volatility, and thermal stability.

[0102] Furthermore, a precursor composition containing the novel organometallic compound and the vapor deposition compound according to the present invention is a solid compound or a low-viscosity liquid compound, which has excellent volatility, and thus can perform uniform thin film deposition, and has high thermal stability and reactivity, and thus can ensure excellent thin film physical properties, thickness, and step coverage.

[0103] The physical properties as described above provide an organometallic-containing precursor applicable to atomic layer deposition and chemical vapor deposition and contribute to excellent thin film properties.

Claims

1. An organometallic compound represented by the following formula (1): In formula (1), M is manganese; a is 2; b is 1 or 2; R1 and R2 are each independently hydrogen, or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; R3 is -OR4 or -NR5R6; R4 is hydrogen, or a straight-chain or branched-chain alkyl group having 1 to 4 carbon atoms; and R5 and R6 are each independently a straight-chain or branched-chain alkylsilyl group having 1 to 6 carbon atoms.

2. The organometallic compound according to claim 1, wherein R1, R2 and R4 are each independently any one selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl and tert-butyl.

3. The organometallic compound according to claim 1, wherein R5 and R6 are each independently any one selected from the group consisting of methylsilyl, dimethylsilyl, trimethylsilyl and triethylsilyl.

4. A precursor composition for chemical vapor deposition comprising the organometallic compound according to any one of claims 1 to 3.

5. A method for preparing a thin film, wherein, The method for preparing a thin film includes the step of introducing the precursor composition for chemical vapor deposition according to claim 4 into a chamber.

6. The method for preparing a thin film according to claim 5, wherein, The method for preparing a thin film includes atomic layer deposition or chemical vapor deposition.

7. The method for preparing a thin film according to claim 5, wherein, The method for preparing a thin film further includes the step of injecting any one or more selected from the group consisting of hydrogen, a compound containing an oxygen atom, a compound containing a nitrogen atom or a compound containing a silicon atom as a reaction gas.

8. The method for preparing a thin film according to claim 7, wherein, The reaction gas is one or more selected from the group consisting of water, oxygen, hydrogen, ozone, ammonia, hydrazine or silane.

9. A thin film containing organometal, wherein, The thin film is prepared by using the precursor composition for chemical vapor deposition according to claim 4.

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