Multi-stage pumping liner

Abstract

An exemplary semiconductor processing system can include a pumping system, a chamber body defining a processing region, and a pumping liner disposed in the processing region. The pumping liner can define an annular member characterized by a wall defining an exhaust aperture coupled to the pumping system. The annular member can be characterized by an interior wall defining a plurality of apertures distributed about the interior wall. A plenum can be defined in the annular member between interior surfaces of the wall. A partition can be disposed in the plenum, wherein the partition separates the plenum into a first plenum chamber and a second plenum chamber, wherein the first plenum chamber is fluidly accessible from the apertures defined through the interior wall, and wherein the partition defines at least one aperture providing fluid access between the first plenum chamber and the second plenum chamber.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Patent Application No. 16 / 932,799, filed July 19, 2020, entitled “MULTI-STAGE PUMPING LINER,” which is incorporated herein by reference in its entirety. Technical Field

[0003] This technology relates to components and apparatus for semiconductor manufacturing. More specifically, this technology relates to processing chamber dispensing components and other semiconductor processing equipment. Background Technology

[0004] Integrated circuits are fabricated by forming intricately patterned material layers on a substrate surface. The formation and removal of patterned material on the substrate requires controlled methods. Chamber components typically deliver gases to the substrate for film deposition or material removal. These gases and other byproducts are removed within the chamber, but this removal can result in residual particles settling onto the patterned substrate. For example, the flow patterns of gases and byproducts during venting can lead to non-uniform material formation on the substrate. Furthermore, the non-uniform flow patterns of gases and byproducts within the processing chamber can cause accumulation on the venting components of the processing chamber.

[0005] Therefore, there is a need for improved systems and methods to generate high-quality devices and structures. These and other needs are addressed by this technology. Summary of the Invention

[0006] An exemplary semiconductor processing chamber pumping liner may include an annular housing. The annular housing may include an inner wall defining an inner surface of the annular housing. The inner wall may define a plurality of pumping orifices disposed through the inner wall and along the inner wall of the annular housing. The annular housing may include a lower wall defining a lower surface of the annular housing. The lower wall may define a primary pumping orifice disposed through the lower wall. The annular housing may include a first gas chamber disposed along the inner surface of the inner wall. The annular housing may include a second gas chamber disposed along the inner surface of the lower wall. The annular housing may include a gas chamber barrier separating the first gas chamber and the second gas chamber. The gas chamber barrier may define a plurality of internal orifices disposed through the gas chamber barrier.

[0007] In some embodiments, each of the plurality of pumping orifices may be of equal size and / or equidistantly arranged along the inner wall of the annular housing. The primary pumping orifice may be vertically offset from each of the plurality of internal orifices. The plurality of internal orifices may be of equal size and / or equidistantly arranged around the chamber barrier. The first orifice of the plurality of internal orifices may be larger than the second orifice of the plurality of internal orifices and / or the angular offset between the orifices of the plurality of internal orifices may vary between the orifices of the plurality of internal orifices. The plurality of pumping orifices may have a diameter less than or approximately half the diameter of the plurality of internal orifices. The annular housing may include a first structural member including the chamber barrier, a second structural member including the second surface, and a third structural member including the inner wall, the third structural member being seated on a recessed ledge of the first structural member.

[0008] Some embodiments of this technology may include a semiconductor processing system. The system may include a pumping system, a chamber body, sidewalls and a bottom wall defining a processing area, and a pumping liner disposed along the sidewall of the chamber body within the processing area. The pumping liner may define an annular member characterized by a first wall and a second wall opposite to the first wall. The second wall may define an exhaust port extending through the second wall and coupled to the pumping system. The annular member may be characterized by an inner wall defining an inner annular radius along its outer surface. The inner wall may define a plurality of orifices distributed around the inner wall of the annular member. The annular member may be characterized by an outer wall defining an outer annular radius along its outer surface. A gas chamber may be defined within the annular member, between the inner surfaces of the first wall, the second wall, the inner wall, and the outer wall. The annular member may be characterized by a separator disposed within the gas chamber and extending from the outer wall to the second wall. The separator divides the air chamber into a first air chamber and a second air chamber. The first air chamber is at least partially defined by the inner wall and the inner surface of the first wall. The first air chamber is fluid-accessible through the plurality of orifices defined through the inner wall. The separator defines at least one orifice to allow fluid access between the first air chamber and the second air chamber.

[0009] In some embodiments, the plurality of orifices distributed around the inner wall of the annular member may be of equal size and / or equidistantly distributed. The exhaust orifice may be vertically offset from the at least one orifice providing fluid access between the first and second air chambers. The at least one orifice providing fluid access between the first and second air chambers may include more than one orifice of equal size and / or be equidistantly arranged around the separator. The first orifice providing fluid access between the first and second air chambers may be larger than the second orifice providing fluid access between the first and second air chambers, and / or the angular offset between the orifices providing fluid access between the first and second air chambers may vary between the orifices providing fluid access between the first and second air chambers. The plurality of orifices distributed around the inner wall of the annular member may have a diameter less than or about half the diameter of the at least one orifice providing fluid access between the first and second air chambers. The annular member may include a first structural member including the separator, a second structural member including the second wall, and a third structural member including the inner wall. The third structural member may be seated on a recessed ledge of the first structural member.

[0010] Some embodiments of this technology may include a semiconductor processing chamber pumping liner. The pumping liner may include an annular member. The annular member may be characterized by a first wall and a second wall opposite to the first wall. The second wall may define an exhaust port extending through the second wall. The annular member may be characterized by an inner wall defining an inner annular radius along its outer surface. The inner wall may define a plurality of orifices distributed around the inner wall of the annular member. The annular member may be characterized by an outer wall defining an outer annular radius along its outer surface. A gas chamber may be defined in the annular member, between the inner surfaces of the first wall, the second wall, the inner wall, and the outer wall. The annular member may be characterized by a separator disposed within the gas chamber and extending from the outer wall to the second wall. The separator may divide the gas chamber into a first gas chamber chamber and a second gas chamber chamber. The first gas chamber chamber may be defined at least partially through the inner wall and the inner surface of the first wall. The first air chamber is fluidly permissible through the plurality of orifices defined through the inner wall. The separator may define at least one orifice to provide fluid flow between the first air chamber and the second air chamber.

[0011] In some embodiments, the exhaust port may be vertically offset from the at least one port providing fluid access between the first and second air chambers. The at least one port providing fluid access between the first and second air chambers may comprise more than one port that may be of equal size and / or equidistant from the separator. The first port providing fluid access between the first and second air chambers may be larger than the second port providing fluid access between the first and second air chambers, and / or the angular offset between the ports providing fluid access between the first and second air chambers may vary between the ports providing fluid access between the first and second air chambers. The plurality of ports distributed around the inner wall of the annular member may have a diameter less than or approximately half the diameter of the at least one port providing fluid access between the first and second air chambers. The annular member may include a first structural member including the separator, a second structural member including the second wall, and a third structural member including the inner wall. The third structural member may be seated on a recessed ledge of the first structural member.

[0012] This technology offers several advantages over conventional systems and techniques. For example, embodiments of this technology can reduce the accumulation of byproducts in the exhaust system within the processing chamber and provide a more uniform flow pattern of gas and byproducts within the processing chamber during exhaust. These and other embodiments, along with their many advantages and features, are described in more detail below in conjunction with the accompanying drawings. Attached Figure Description

[0013] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the accompanying drawings.

[0014] Figure 1 A top plan view of an exemplary processing system according to certain embodiments of the present technology is shown.

[0015] Figure 2 A schematic cross-sectional view of an exemplary plasma system according to certain embodiments of the present technology is shown.

[0016] Figure 3 A cross-sectional view depicting an exemplary pumping liner according to certain embodiments of the present technology.

[0017] Figure 4 A top view depicting an exemplary pumping liner according to certain embodiments of the present technology.

[0018] Several accompanying figures are included as examples. It should be understood that the figures are for illustrative purposes and should not be considered to scale unless specifically described to scale. Furthermore, as to aid understanding, diagrams are provided and may not include all aspects or information compared to actual representations, and may include exaggerated material for illustrative purposes.

[0019] In the accompanying drawings, similar parts and / or features may have the same reference numerals. Furthermore, various parts of the same type may be distinguished among similar parts by the difference in the letters of their reference numerals. If only the first reference numeral is used in the description, the description applies to any similar part having the same first reference numeral, regardless of the letter. Detailed Implementation

[0020] Plasma-assisted deposition processes may quantify one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be generated to develop semiconductor structures, including conductive and dielectric films, as well as films to facilitate material transport and removal. In many processing chambers, gas panels can be used to transport gas to the processing areas of the chamber for developing structures on the substrate. Furthermore, gas can be transported to the processing chamber for cleaning operations. Additionally, in some cases, the substrate may be arranged within the processing area, and gas can be used to facilitate substrate patterning. In some cases, the processing area may not include the substrate, and gas can be used to clean the chamber for unwanted byproducts. Gas can be distributed through one or more components within the chamber, creating radially or laterally distributed transport to provide increased formation or removal at the substrate surface or within the chamber.

[0021] As device feature sizes decrease, tolerances across the substrate surface can be reduced, and differences in material properties across the film can affect device realization and uniformity. Temperature differences, flow pattern uniformity, and other aspects of processing can affect the film on the substrate, creating film uniformity differences across the substrate due to the formation or removal of materials. For example, one or more devices may be included in a processing chamber for transporting and distributing gases within the chamber. To remove gases and other byproducts from the chamber, a pumping system coupled to the chamber may extract the gases and other byproducts from the chamber via a pumping pad assembly. Because multiple pumping systems exhaust from a single location within the chamber, the flow pattern for removing gases and byproducts can be non-uniform (e.g., the flow may be inappropriately positioned near the pumping system), which can affect uniformity across the substrate. Furthermore, accumulation may occur on portions of the pumping pad assembly in areas with higher flow than in other areas.

[0022] In some non-limiting examples of the process, the pumping liner assembly may include an air chamber that allows fluid to flow into and out of the processing chamber through orifices in the pumping liner assembly. The orifices and air chambers contribute to a more uniform flow pattern within the processing chamber for removing gas and byproducts through the main venting orifices of the pumping liner coupled to the pumping system. While these orifices and air chambers help homogenize the flow pattern, the accumulation of byproducts on the orifices can still have a substantial impact on the flow pattern and, in some cases, can affect the uniformity of the process acting on the substrate.

[0023] This technology addresses these challenges by adapting non-uniform flow patterns to the processing area of ​​the chamber using an improved pumping liner. The modified pumping liner assembly has two air chambers that allow the flow pattern to alternately pass through the processing chamber, averaging the flow through the orifices to reduce byproduct accumulation and improve uniformity on the substrate surface.

[0024] While the remainder of this disclosure will routinely identify specific processes using the disclosed techniques, it should be immediately understood that the system and methods are equally applicable to deposition and cleaning chambers, and the processes that can occur within said chambers. Therefore, this technique should not be construed as limiting its use to only these specific deposition processes or chambers. Prior to any additional modifications and adjustments to this system according to embodiments of this technique, this disclosure will discuss a possible system and chamber that may include chamber components according to embodiments of this technique.

[0025] Figure 1 A top plan view of one embodiment of a processing system 100 for deposition, etching, baking, and curing chambers according to an embodiment is shown. In the figure, a pair of front-opening standard chambers 102 supply substrates of various sizes received by a robotic arm 104 and placed in a lower pressure holding region 106 before being placed into one of the substrate processing chambers 108a-f located in series partitions 109a-c. A second robotic arm 110 is available to transfer substrate wafers from the holding region 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be configured to perform several substrate processing operations, including forming stacks of the semiconductor materials described herein, as well as plasma-assisted chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and other substrate processing, including annealing, ashing, etc.

[0026] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching dielectric or other films on the substrate. In one configuration, two pairs of processing chambers, such as 108c-d and 108e-f, may be used to deposit dielectric material on the substrate, and a third pair of processing chambers, such as 108a-b, may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, such as 108a-f, may be configured to deposit a stack of alternating dielectric films on the substrate. In various embodiments, any one or more of the processes may be performed in a chamber separate from the fabrication system shown. It should be understood that additional configurations for the deposition, etching, annealing, and curing chambers for dielectric films are considered in relation to system 100.

[0027] Figure 2 A schematic cross-sectional view of an exemplary plasma system 200 according to certain embodiments of the present technology is shown, and it may include one or more components according to the present technology. The plasma system 200 may be illustrated as a pair of processing chambers 108, which may conform to one or more tandem partitions 109 as described above, and may include panels or other components or assemblies according to the present technology. The plasma system 200 generally includes a chamber body 202 having sidewalls 212, a bottom wall 216, and an inner sidewall 201 defining a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include the same components.

[0028] For example, components of processing region 220B, which may also be included in processing region 220A, may include a base 228 arranged in the processing region within the plasma system 200 via a passage 222 formed in the bottom wall 216. The base 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the base, such as a body portion. The base 228 may include a heating element 232, such as a resistance heating element, which can be heated at the desired processing temperature and the substrate temperature controlled. The base 228 may also be heated by a remote heating element, such as a lamp assembly or any other heating device.

[0029] The main body of base 228 is coupled to rod 226 via flange 233. Rod 226 electrically couples base 228 to power output or power box 203. Power box 203 may include a drive system to control the lifting and movement of base 228 within processing area 220B. Rod 226 may also include an electrical power interface to provide electrical power to base 228. Power box 203 may also include interfaces for electrical power and temperature indicators, such as thermocouple interfaces. Rod 226 may also include a base assembly 238 adapted for detachable coupling to power box 203. Circumferential ring 235 is shown above power box 203. In some embodiments, circumferential ring 235 may be a shoulder adapted to act as a mechanical stop or landing, configured to provide a mechanical interface between base assembly 238 and upper surface of power box 203.

[0030] The rod 230 may be included via a passage 224 formed in the bottom wall 216 of the processing area 220B, and may be used to position a substrate lifting pin 261 arranged in the main body of the base 228. The substrate lifting pin 261 may selectively space the substrate 229 from the base to facilitate the exchange of the substrate 229 by a robot, which uses the substrate 229 to enter and exit the processing area 220B through the substrate transfer port 260.

[0031] A chamber cover 204 may be coupled to the top portion of the chamber body 202. The cover 204 may house one or more precursor distribution systems 208 coupled thereto. The precursor distribution system 208 may include a precursor inlet passage 240, which may deliver reactants and cleaning precursors through a gas delivery assembly 218 into a processing area 220B. The gas delivery assembly 218 may include a gas chamber 248 having a baffle 244 disposed in the middle of a panel 246. A radio frequency (“RF”) source 265 may be coupled to the gas delivery assembly 218, thereby powering the gas delivery assembly 218 to facilitate the generation of a plasma region between the panel 246 and the base 228 of the gas delivery assembly 218, which may be the processing area of ​​the chamber. In some embodiments, the RF source may be coupled to other portions of the chamber body 202, such as the base 228, to facilitate plasma generation. A dielectric insulator 258 may be disposed between the cover 204 and the gas delivery assembly 218 to prevent RF power from being coupled to the cover 204. A shielding ring 206 may be arranged around the base 228 and engage the base 228.

[0032] An optional cooling channel 247 may be formed in the gas chamber 248 of the gas distribution system 208 to cool the gas chamber 248 during operation. A heat transfer fluid, such as water, glycol, gas, or the like, may circulate through the cooling channel 247, allowing the gas chamber 248 to be maintained at a predetermined temperature. A liner assembly 227 may be disposed within the processing area 220B, near the sidewalls 201, 212 of the chamber body 202, to avoid exposing the sidewalls 201, 212 to the processing environment within the processing area 220B. The liner assembly 227 may include a circumferential pumping chamber 225 coupleable to a pumping system 264 configured to discharge gases and byproducts from the processing area 220B and control the pressure within the processing area 220B. A plurality of exhaust ports 231 may be formed on the liner assembly 227. The exhaust port 231 can be configured to facilitate processing within the system 200 by allowing gas to flow from the processing area 220B to the circumferential pumping chamber 225.

[0033] Figure 3 A cross-sectional view of an exemplary pumping liner 300 according to certain embodiments of the present technology is depicted. Figure 3 Further details regarding components in system 200, such as pumping pad assembly 227, may be depicted. Pumping pad 300 is understood to include any features or aspects of system 200 previously discussed in some embodiments. Pumping pad 300 may be incorporated into chambers used in semiconductor processing operations, including deposition, removal, and cleaning operations. The figures may show partial views of the pumping pad, which may be incorporated into a semiconductor processing system, and may depict views of annular pumping pad 300, which may be of any size, spanning any cross-section.

[0034] As described, the pumping liner 300 may be included in any number of processing chambers, including the system 200 described above. The pumping liner 300 may be part of the pumping liner assembly 227. For example, the pumping liner 300 may include a pumping chamber 225 and an exhaust port 231 as further described below. Components may include any features previously described for similar components, as well as various other modifications similarly incorporated by means of this technology.

[0035] The pumping liner 300 may be an annular member (i.e., an annular housing) and, as previously illustrated, may be positioned within a processing area (e.g., processing area 220) along or near a sidewall (e.g., sidewalls 201, 212) of a chamber body (e.g., chamber body 202). The pumping liner 300 may be characterized by a first wall 305 having an inner surface 306 and an outer surface 307. The pumping liner 300 may be characterized by a second wall 310 opposite to the first wall 305. Within the processing chamber, a panel or other cover stack may be seated on the first wall 305, while the pumping liner 300 may be seated on a cover plate or chamber body on the second wall 310. The second wall 310 may have an inner surface 311 and an outer surface 312. The pumping liner 300 may be defined by an inner annular radius (e.g., regarding the inner annular radius of the pumping liner 300). Figure 4 The inner wall 315 (with an inner annular radius of 405) is characterized. The inner wall 315 has an inner surface 316 and an outer surface 317. The pumping liner 300 can be defined by the outer annular radius (e.g., regarding the inner annular radius of 405) of the pumping liner 300. Figure 4 The outer wall 320 (with an outer annular radius of 410) is characterized. The outer wall 320 has an inner surface 321 and an outer surface 322. In some embodiments, the inner wall 315 may face the processing area (e.g., processing area 220). For example, in some embodiments, the inner wall 315 may at least partially define the processing area within the chamber. In some embodiments, the second wall 310 may face the bottom wall of the processing chamber (e.g., bottom wall 216).

[0036] The walls 305, 310, 315, and 320 of the pumping gasket 300 may form an annular structure (i.e., an annular shell) having internal surfaces 306, 316, 311, and 321 defining air chambers 330 (e.g., cavities, such as circumferential pumping chamber 225) within the annular members. The air chambers 330 may be separated into a first air chamber cavity 340 and a second air chamber cavity 345 by a partition 335 (e.g., a barrier). The partition 335 may extend from the outer wall 320 to the second wall 310. In some embodiments, the partition 335 may form a ninety-degree (90°) angle; however, as illustrated, the corners of the arcuate partition may extend radially as shown. The first air chamber 340 may be defined by the surface of the partition 335, the inner surface 306 of the first wall 305, the inner surface 316 of the inner wall 315, a portion of the inner surface 311 of the second wall 310, and a portion of the inner surface 321 of the outer wall 320. The second air chamber 345 may be defined by the second surface of the partition 335, a portion of the inner surface 311 of the second wall 310, and a portion of the inner surface 321 of the outer wall 320. In some embodiments, the partition 335 may extend continuously around an annular member within the air chamber 330.

[0037] In some embodiments, the pumping gasket 300 may be characterized by multiple structural components that can be combined to form annular members and other features described above. These structural components may be positioned together using recessed features such that the components conform together and remain in place, sealing whether or not they are bonded, welded or otherwise mechanically coupled. For example, the pumping gasket 300 may include a first structural component 350, which may include an outer wall 320, a portion of the first wall 305 and a spacer 335. The pumping gasket 300 may include a second structural component 355, which may include a portion of the second wall 310. The pumping gasket 300 may include a third structural component 360, which may include an inner wall 315, a portion of the first wall 305 and a portion of the second wall 310. The second structural component 355 may define a recessed ledge 375 including internal steps to generate a sealing feature for the first component 350 to which it may be seated. The first component 350 may similarly define a recessed ledge for sealing the recessed ledge 375. This contact coupling limits the gaps formed around the liner, through which processing material might leak. Furthermore, the first structural component 350 can rotate within the pumping liner, allowing for adjustment of the orifices as discussed below. This enables flow control that can influence the deposition profile to account for planar deviations.

[0038] The second structural member 355 may also define a channel 370, which may extend around the second structural member and may be sized to accommodate the first structural member 350. For example, a separator 335 may be seated in the channel 370, and the edge of the outer wall 320 may be seated on and abut against a recessed ledge 375. Further, the first structural member 350 may define a recessed ledge 365 thereon on which a third structural member 360 may be seated. Similar to the recessed ledges 375 and 320, the recessed ledge 365, as illustrated, may accommodate a corresponding recessed ledge of the third structural member, again limiting leakage between the members. The depicted configuration is a non-limiting example of how structural members may be seated to form a ring-shaped member. In some embodiments, more or fewer structural members may be used and / or structural members may be seated or coupled differently.

[0039] The inner wall 315 may define a hole 325 extending from the outer surface 317 to the inner surface 316 of the inner wall 315. The hole 325 may be, for example, the previously described vent 231. The hole 325 (pumping hole or vent) provides fluid inflow and outflow between the processing area and the first gas chamber 340. The hole 325 may be distributed around the inner wall 315. Any number of holes 325 may be defined around the liner, which may affect the flow profile from the processing area. The holes 325 may be distributed at intervals or may be defined around the liner to increase or decrease flow from one or more areas, for example, by increasing or decreasing the number of holes defined in a given area around the liner. In some embodiments, the holes 325 may be of equal size and may be characterized by diameters less than or about 15 mm, less than or about 12 mm, less than or about 10 mm, less than or about 7 mm, less than or about 5 mm, less than or about 3 mm, or smaller. It should be understood that the holes 325 can be formed or distributed in other patterns and can be characterized by any size, shape or azimuth spacing between them to improve uniform flow or modify the distribution within the processing area.

[0040] Such as about Figure 4 To elaborate further, the separator 335 may define multiple orifices (e.g., internal orifice 415) to provide fluid inflow and outflow between the first air chamber 340 and the second air chamber 345. Also regarding Figure 4 As will be described in more detail, the second wall 310 may define a main vent (e.g., main vent 420) extending from the outer surface 312 to the inner surface 311 of the second wall 310. The main vent may be defined in the second structural member 355. The main vent may be coupled to a pumping system (e.g., pumping system 264) to provide fluid inflow and outflow between the pumping system and the second air chamber 345.

[0041] In use, the pumping system may include means to generate pumping (e.g., suction or vacuum) behavior for venting gases and byproducts from the processing area and controlling the pressure within the processing area. The pumping behavior causes gases and byproducts to flow from the processing area (e.g., processing area 220) through orifice 325 into a first gas chamber 340. Gases and byproducts are drawn from the first gas chamber 340 into a second gas chamber 345 through internal orifices (e.g., internal orifice 415). Gases and byproducts are drawn from the second gas chamber 345 into a pumping system (e.g., pumping system 264) through a main vent (e.g., main vent 420) for discharge from the semiconductor processing system. Having a single gas chamber can cause gases and byproducts to be drawn from the processing area at an increased concentration at the orifice 325 closest to the main vent, potentially causing flow nonuniformity within the processing area and operational deviations on the processed substrate. The use of separator 335 can evenly and balancedly regulate the flow pattern of gas and byproducts in the processing area through the various orifices 325 into the first gas chamber 340. This can occur because the second gas chamber 345 and its internal orifices cause a more even distribution of suction from the pumping system into the first gas chamber 340, and thus into the processing area and through the orifices 325.

[0042] Figure 4 A top view of an exemplary pumping pad 400 according to certain embodiments of the present technology is depicted. The pumping pad 400 may be a pumping pad 300, and further details regarding the system 200 and the pumping pad 300 are depicted. The pumping pad 400 is understood to include any features or aspects of the pumping pad 300 and may be incorporated into a processing chamber that includes any components of the system previously discussed in some embodiments. The pumping pad 400 may be incorporated into a chamber for performing semiconductor processing operations, including the removal of gases and other byproducts from the processing chamber as previously described, including during deposition, removal, and cleaning operations.

[0043] As described, the pumping liner 400 may be included in any number of processing chambers, including the system 200 described above. The pumping liner 400 may be part of the pumping liner assembly 227. For example, the pumping liner 400 may include an exhaust port 231 (e.g., an orifice 325) for allowing gas to flow from the processing area 220 into the pumping chamber 225 (e.g., a gas chamber 330). Components may include any of the features previously described for similar components, as well as various other modifications similarly incorporated by means of this technology.

[0044] As shown, the pumping liner 400 may be an annular member. An inner wall (e.g., inner wall 315) may define an inner annular radius 405, and an outer wall (e.g., outer wall 320) may define an outer annular radius 410. The inner annular radius 405 may define a processing area. A chamber (e.g., chamber 330) is defined by the space between the inner surfaces of the inner walls and the inner surfaces of the outer walls. The chamber may include partitions (e.g., partition 335) and may define a plurality of internal openings 415 visible in a hidden view through the upper surface of the liner. The internal openings 415 may be distributed around the partitions. The internal openings 415 may provide fluid inflow and outflow between a first chamber chamber (e.g., first chamber chamber 340) and a second chamber chamber (e.g., second chamber chamber 345). The internal openings 415 may be arranged perpendicularly to the pumping openings (e.g., opening 325) that provide fluid inflow and outflow between the processing area and the first chamber chamber on the inner wall. Despite Figure 4 The image depicts eight internal holes 415. According to the present technology, any number of internal holes 415 can be present in the pumping liner. In some embodiments, the internal holes 415 may be arranged at intervals along the separator; however, the holes may be spaced at different intervals to adjust flow within the pumping liner or between air chambers. The holes 415 may be of equal size or may be characterized by different diameters in different areas of the liner, for example, a larger diameter further away from the exhaust port and a smaller diameter closer to the exhaust port, as will be discussed below. The holes 415 may be characterized by any diameter, and may be characterized by diameters less than or about 20 mm, less than or about 15 mm, less than or about 10 mm, less than or about 7 mm, less than or about 5 mm, or even smaller.

[0045] Holes of varying sizes can be used to adjust for wafer profile deviations as previously described. For example, hole 415 can be characterized by a pattern of sizes to create increased flow through a specific section of the pumping pad. This draws precursors toward this area, which can, for example, cause deposition or etching operations to occur more immediately toward this section of the substrate. Some processes can be characterized by profile deviations on the wafer, such as increased or decreased deposition or etching at one location relative to other locations. For example, less deposition may occur near openings in the chamber where the substrate is transferred and removed. This is due to the non-uniformity of the sidewall profile, which can be caused by lower chamber temperatures in this area. Increased deposition can be created in this area by rotating the hole profile, for example by rotating the first structural member 350 in which hole 415 is defined, by aligning the larger holes of the pumping pad with this area of ​​the chamber. This can address reduced deposition. Any number of other chamber or process plane deviations can be accommodated in this manner. The first structural member can be calibrated to indicate rotational information for adjusting the flow profile within the chamber.

[0046] In some embodiments, the internal holes 415 may be sized such that the pumping holes (e.g., holes 325) are characterized by diameters smaller than the diameter of the internal holes 415. For example, the diameter of the pumping holes may be less than or about 90% of the diameter of the internal holes 415, and may be characterized by diameters less than or about 80% of the diameter of the holes 415, less than or about 70% of the diameter, less than or about 60% of the diameter, less than or about 50% of the diameter, less than or about 40% of the diameter, less than or about 30% of the diameter, less than or about 20% of the diameter, or even smaller. In some embodiments, the internal holes 415 are not of equal size. For example, in some embodiments, the internal holes 415 may have a larger diameter than, for example, the internal holes 415 near the main exhaust hole 420. In some embodiments, the angular offset between the internal holes 415 may vary. Therefore, in some embodiments, the internal holes 415 may not be equidistant around the separator. In some embodiments, the internal holes 415 are distributed in other patterns and may have sizes, shapes and distances between them to improve uniform or controlled flow in the processing area 220.

[0047] The pumping liner 400 may include a second wall (e.g., second wall 310) defining a primary vent hole 420, as shown in a concealed view at the opposite surface or bottom of the liner. The primary vent hole 420 may be coupled to a pumping system (e.g., pumping system 264). The primary vent hole 420 provides fluid inflow and outflow between a second chamber chamber (e.g., second chamber chamber 345) and the pumping system. The primary vent hole 420 may be perpendicularly offset from the internal holes 415. For example, the primary vent hole 420 may be arranged so that it is not perpendicularly aligned with either of the internal holes 415. In some embodiments, the primary vent hole 420 is centered between two internal holes 415.

[0048] The use of chamber dividers (e.g., divider 335) can substantially balance or equalize the flow pattern of gas and byproducts passing through pumping orifices (e.g., orifice 325) in the processing area. The number, location, and size of internal orifices (e.g., internal orifice 415) and pumping orifices (e.g., orifice 325) can affect the flow of gas and byproducts from the processing area through the pumping orifices to the first chamber (e.g., first chamber 340), through the internal orifices to the second chamber (e.g., second chamber 345), and exiting through the main exhaust orifice (e.g., main exhaust orifice 420) for discharge via the pumping system. In other words, modifying the number, size, and / or location of pumping orifices and / or the number, size, and / or location of internal orifices can affect the uniformity of the flow of gas and byproducts from the processing chamber through the pumping orifices and / or internal orifices. For example, because the pumping system can exhaust gas and byproducts through a single main exhaust port via the pumping liner, having fewer and / or smaller internal pores near the main exhaust port can improve the more uniform flow pattern of the gas from the first gas chamber to the second gas chamber. Therefore, this configuration improves the uniformity of gas flow through the pumping port into the first gas chamber in the processing area, thereby improving processing uniformity on the wafer.

[0049] In the foregoing description, several details have been mentioned for illustrative purposes to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments can be performed without certain such details or with additional details.

[0050] Several embodiments have been disclosed, and those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, several known processes and elements have not been described to avoid unnecessarily obscuring the scope of the invention. Therefore, the above description should not be construed as limiting the scope of the invention.

[0051] When a range of values ​​is provided, it should be understood that each intermediate value represents the smallest fraction of the lower limit unit, unless otherwise clearly indicated in the text, and the values ​​between the upper and lower limits of the range are also specifically disclosed. Any narrower ranges between any stated values, or intermediate values ​​not stated in the range, and any other stated or intermediate values ​​within the range are included. The upper and lower limits of these smaller ranges may be independently included in or excluded from the range, and when any, not any, or both of these limitations are included in a smaller range, the respective range is also included in the technique and subject to any specific exclusion from the range. When a range includes one or both of the limitations, the range excluding any or both of the included limitations is also included.

[0052] As used herein and in the appended claims, the singular forms “a,” “one,” and “the” include plural references unless explicitly indicated otherwise in the text. Thus, for example, reference to “hole” includes multiple holes, and reference to “the component” includes reference to one or more components and equivalents known to those skilled in the art, and so on.

[0053] Furthermore, when the terms “comprising,” “may contain,” “contain,” “may contain,” “including,” and “may include” are used in this specification and in the following claims, they are intended to describe the presence of the stated feature, integer, component, or operation, but do not exclude the presence or addition of one or more other features, integers, components, operations, actions, or groups.

Claims

1. A semiconductor processing chamber pumping pad, comprising: The annular shell is characterized by the following: First surface; A second surface, opposite to the first surface, wherein the second surface defines an exhaust hole; An inner wall extends between the first surface and the second surface, the inner wall defining an inner surface of the annular housing, wherein the inner wall defines a plurality of pumping holes arranged through the inner wall and along the inner wall of the annular housing; The first air chamber is formed along the inner surface of the inner wall; The second air chamber is formed along the inner surface of the lower wall of the annular outer shell; as well as An air chamber barrier separates the first air chamber from the second air chamber, wherein: The air chamber barrier defines a plurality of internal openings through the air chamber barrier, providing fluid inflow and outflow between the first air chamber and the second air chamber; and The central axis of each of the plurality of internal holes is perpendicular to a plane that is parallel to the first surface and the second surface and extends through each of the plurality of pumping holes.

2. The semiconductor processing chamber pumping liner of claim 1, wherein each of the plurality of pumping holes is of equal size and is arranged equidistantly along the inner wall of the annular housing.

3. The semiconductor processing chamber pumping liner as claimed in claim 1, wherein the exhaust orifice is offset perpendicularly to each of the plurality of internal orifices.

4. The semiconductor processing chamber pumping liner of claim 1, wherein the plurality of internal holes are of equal size and are arranged equidistantly around the chamber barrier.

5. The semiconductor processing chamber pumping liner of claim 1, wherein the first hole of the plurality of internal holes is larger than the second hole of the plurality of internal holes, and wherein the angular offset between the holes of the plurality of internal holes varies between the holes of the plurality of internal holes.

6. The semiconductor processing chamber pumping liner of claim 1, wherein the plurality of pumping orifices are characterized by a diameter less than or equal to half the diameter of the plurality of internal orifices.

7. The semiconductor processing chamber pumping liner of claim 1, wherein the annular housing comprises a first structural member including the chamber barrier, a second structural member including the second surface, and a third structural member including the inner wall, wherein the third structural member is seated on a recessed wall of the first structural member.

8. A semiconductor processing system, comprising: Pumping system; as well as The main chamber defines the processing area, including: The chamber body includes a pumping liner that extends along the sidewall of the chamber body around the processing area; The pumping liner includes an annular member characterized by a first wall and a second wall opposite to the first wall; The second wall defines an exhaust port that extends through the second wall and fluidly couples the pumping system to the chamber body; The annular member is characterized by an inner wall that defines an inner annular radius of the annular member along the outer surface of the inner wall, and the inner wall defines a plurality of holes distributed around the inner wall of the annular member. The annular member is characterized by an outer wall that defines the outer annular radius of the annular member along its outer surface; The air chamber is defined within the annular member and is located between the inner surfaces of the first wall, the second wall, the inner wall, and the outer wall; The annular member is characterized by a partition, which is arranged in the air chamber and extends from the outer wall to the second wall; The separator divides the air chamber into a first air chamber and a second air chamber, the first air chamber being defined at least partially by the inner wall and the inner surface of the first wall; The first air chamber is fluidly accessible through the plurality of holes defined by the inner wall; The separator defines at least one aperture to allow fluid to enter and exit between the first air chamber and the second air chamber; and The central axis of the at least one hole is perpendicular to a plane that is parallel to the first wall and the second wall and extends through each of the plurality of holes.

9. The semiconductor processing system of claim 8, wherein the plurality of holes distributed around the inner wall of the annular member are of equal size and are equidistantly distributed along the inner wall.

10. The semiconductor processing system of claim 8, wherein the exhaust port is perpendicularly offset to the at least one port providing fluid access between the first gas chamber and the second gas chamber.

11. The semiconductor processing system of claim 8, wherein the at least one aperture providing fluid access between the first gas chamber and the second gas chamber comprises a plurality of apertures of equal size and equidistantly arranged around the separator.

12. The semiconductor processing system of claim 8, wherein the at least one orifice providing fluid access between the first gas chamber and the second gas chamber is a plurality of orifices, wherein a first orifice of the plurality of orifices is larger than a second orifice of the plurality of orifices, and wherein the angular offset between the orifices of the plurality of orifices varies between the orifices of the plurality of orifices.

13. The semiconductor processing system of claim 8, wherein the plurality of holes distributed around the inner wall of the annular member are characterized by a diameter of less than or equal to 80% of the diameter of the at least one hole providing fluid access between the first gas chamber and the second gas chamber.

14. The semiconductor processing system of claim 8, wherein the annular member comprises a first structural member including the separator, a second structural member including the second wall, and a third structural member including the inner wall, wherein the third structural member is seated on a recessed wall of the first structural member.

15. A semiconductor processing chamber pumping pad, comprising: A ring-shaped component is characterized by the following: First wall, A second wall, opposite to the first wall, wherein the second wall defines an exhaust port extending through the second wall. An inner wall, the inner wall defining an inner annular radius of the annular member along its outer surface, wherein the inner wall defines a plurality of holes distributed around the inner wall of the annular member. An outer wall, the outer wall defining an outer annular radius of the annular member along its outer surface, wherein an air chamber is defined within the annular member, between the inner surfaces of the first wall, the second wall, the inner wall, and the outer wall. A partition, disposed within the air chamber and extending from the outer wall to the second wall, wherein: The separator divides the air chamber into a first air chamber and a second air chamber, the first air chamber being defined at least partially by the inner wall and the inner surface of the first wall; The first air chamber is fluidly accessible through the plurality of holes defined by the inner wall; The separator defines at least one aperture to allow fluid to enter and exit between the first air chamber and the second air chamber; and The central axis of the at least one hole is perpendicular to a plane that is parallel to the first wall and the second wall and extends through each of the plurality of holes.

16. The semiconductor processing chamber pumping liner of claim 15, wherein the vent hole is perpendicularly offset to the at least one hole providing fluid inflow and outflow between the first gas chamber chamber and the second gas chamber chamber.

17. The semiconductor processing chamber pumping liner of claim 15, wherein the at least one orifice providing fluid access between the first and second gas chambers comprises a plurality of orifices of equal size and equidistantly arranged around the separator.

18. The semiconductor processing chamber pumping liner of claim 15, wherein the at least one orifice providing fluid access between the first gas chamber chamber and the second gas chamber chamber is a plurality of orifices, wherein a first orifice of the plurality of orifices is larger than a second orifice of the plurality of orifices, and wherein the angular offset between the orifices of the plurality of orifices varies between the orifices of the plurality of orifices.

19. The semiconductor processing chamber pumping liner of claim 15, wherein the plurality of holes distributed around the inner wall of the annular member are characterized by a diameter less than or equal to half the diameter of the at least one hole providing fluid access between the first and second air chambers.

20. The semiconductor processing chamber pumping liner of claim 15, wherein the annular member comprises a first structural member including the separator, a second structural member including the second wall, and a third structural member including the inner wall, wherein the third structural member is seated on a recessed wall of the first structural member.

Images