High frequency module and communication device

Abstract

The high-frequency module (1) comprises: a transmission filter (11) for passing a transmission signal of a frequency band A for FDD; a reception filter (12) for passing a reception signal of a frequency band A; a filter (20) for passing a transmission and reception signal of a frequency band B for TDD; power amplifiers (15 and 25); a low-noise amplifier (35); a switch (42) for switching the connection between the reception filter (12) and the filter (20) and the low-noise amplifier (35); a switch (41) for switching the connection between the filter (20) and the power amplifier (25) and the low-noise amplifier (35); a matching circuit (13) connected between the power amplifier (15) and the transmission filter (11); a matching circuit (23) connected between the power amplifier (25) and the switch (41); and a module substrate (91), on which the power amplifiers (15, 25) and the switch (41) are respectively arranged between the matching circuit (13) and the matching circuit (23).

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as cellular phones, the layout structure of circuit elements constituting high-frequency front-end circuits has become increasingly complex, particularly with the advancement of multi-band technology.

[0003] Patent Document 1 discloses a front-end circuit capable of performing communications in multiple communication frequency bands. Specifically, the front-end circuit includes a first transmission path connected in sequence to a first power amplifier, a first frequency band selection switch, multiple duplexers corresponding to each communication frequency band, and an antenna switch; and a second transmission path connected in sequence to a second power amplifier, a second frequency band selection switch, multiple duplexers corresponding to each communication frequency band, and an antenna switch.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: U.S. Patent Application Publication No. 2019 / 190548 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] However, the front-end circuit disclosed in Patent Document 1 assumes that it includes both a frequency division duplex (FDD) signal path for transmitting signals in the communication frequency band and a time division duplex (TDD) signal path for transmitting signals in the communication frequency band. The FDD and TDD signal paths have different transmit power amplifiers and the same receive low-noise amplifier. In this case, when transmitting and receiving signals in the FDD communication frequency band, the output matching circuits of the different transmit power amplifiers couple with each other. This leads to the problem of unwanted waves from the transmit power amplifiers flowing into the receive low-noise amplifier via the TDD signal path, thereby degrading the receive sensitivity of the FDD signal path.

[0009] The present invention has been made to solve the above-mentioned problem, and an object of the present invention is to provide a high-frequency module and a communication device that suppress degradation of reception sensitivity of an FDD signal path.

[0010] Technical solutions to solve problems

[0011] A high-frequency module according to one embodiment of the present invention comprises: a first transmitting filter having a passband including an uplink operating frequency band of a first communication frequency band for FDD; a first receiving filter having a passband including a downlink operating frequency band of the first communication frequency band; a second filter having a passband including a second communication frequency band for TDD; a first power amplifier capable of amplifying a transmitting signal of the first communication frequency band; a second power amplifier capable of amplifying a transmitting signal of the second communication frequency band; a low-noise amplifier capable of amplifying a receiving signal of the first communication frequency band and a receiving signal of the second communication frequency band; a first switch for connecting the first receiving filter and the low-noise amplifier and the second filter and the low-noise amplifier; a first impedance matching circuit connected between the first power amplifier and the first transmitting filter; a second impedance matching circuit connected between the second power amplifier and the second switch; and a module substrate having a main surface, the first power amplifier, the second power amplifier, the second switch, the first impedance matching circuit, and the second impedance matching circuit being arranged on the main surface, and when looking down at the module substrate, the first power amplifier, the second power amplifier, and the second switch are respectively arranged between the first impedance matching circuit and the second impedance matching circuit.

[0012] Effects of the Invention

[0013] According to the present invention, it is possible to provide a high-frequency module and a communication device that suppress degradation of reception sensitivity of an FDD path. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

[0015] Figure 2 This is a diagram illustrating the flow of signals in FDD transmission in a high-frequency module and a communication device according to an embodiment.

[0016] Figure 3 It is a plan view of a high-frequency module according to the embodiment.

[0017] Figure 4 It is a plan view of a high-frequency module according to Modification 1 of the embodiment.

[0018] Figure 5 It is a plan view of a high-frequency module according to Modification 2 of the embodiment. DETAILED DESCRIPTION

[0019] The following are detailed descriptions of the embodiments of the present invention using the accompanying drawings. The embodiments described below are general or specific examples. The numerical values, shapes, materials, components, configurations of components, and connection methods shown in the following embodiments are examples and are not intended to limit the present invention.

[0020] In addition, each figure is a schematic diagram in which emphasis, omission, or ratio adjustment are appropriately performed to illustrate the present invention, and is not necessarily a strict illustration, and may differ from the actual shape, positional relationship, and ratio. In each figure, substantially the same structure is marked with the same reference numerals, and repeated descriptions may be omitted or simplified.

[0021] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. Furthermore, the z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating upward and its negative direction indicating downward.

[0022] In the circuit structure of the present disclosure, the term "connected" includes not only direct connection using connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. Furthermore, the term "connected between A and B" means connection between A and B and to both A and B.

[0023] In addition, in the module structure disclosed in the present invention, the so-called "looking down" means observing the object by orthographic projection from the positive side of the z-axis to the xy plane. The so-called "components are arranged on the main surface of the substrate", in addition to including the case where the components are arranged on the main surface in a state of contact with the main surface of the substrate, also includes the case where the components are arranged above the main surface without contacting the main surface, and the case where a part of the component is buried in the substrate from the main surface side. The so-called "A is arranged between B and C" means that at least one of the multiple line segments connecting an arbitrary point in B and an arbitrary point in C passes through A. In addition, terms such as "parallel" and "perpendicular" that indicate the relationship between elements, and terms such as "rectangular" that indicate the shape of an element do not only have strict meanings, but also mean that they also include substantially the same range, for example, they also include errors of several percent.

[0024] (Implementation Method)

[0025] [1 Circuit Structure of High-Frequency Module 1 and Communication Device 5]

[0026] Reference Figure 1 The circuit configurations of the high-frequency module 1 and the communication device 5 according to this embodiment will be described. Figure 1 1 is a circuit configuration diagram of a high-frequency module 1 and a communication device 5 according to the embodiment.

[0027] [1.1 Circuit Structure of Communication Device 5]

[0028] First, the circuit structure of the communication device 5 is described. Figure 1 As shown, a communication device 5 according to this embodiment includes a high-frequency module 1 , an antenna 2 , an RF signal processing circuit (RFIC) 3 , and a baseband signal processing circuit (BBIC) 4 .

[0029] The high-frequency module 1 transmits high-frequency signals between the antenna 2 and the RFIC 3. The high-frequency module 1 can be used as a module capable of transmitting and receiving high-frequency signals for TDD and FDD. The detailed circuit structure of the high-frequency module 1 will be described later.

[0030] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 , transmits a high-frequency signal output from the high-frequency module 1 , and receives a high-frequency signal from the outside and outputs it to the high-frequency module 1 .

[0031] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 processes the high-frequency receive signal input via the receive path of the high-frequency module 1 by down-conversion, etc., and outputs the receive signal generated by this signal processing to BBIC4. In addition, RFIC3 processes the transmit signal input from BBIC4 by up-conversion, etc., and outputs the high-frequency transmit signal generated by this signal processing to the transmit path of the high-frequency module 1 via an amplifier circuit, etc. RFIC3 also includes a control unit that controls switches and amplifiers included in the high-frequency module 1. Furthermore, some or all of the functions of the control unit of RFIC3 may be installed outside of RFIC3, for example, in BBIC4 or the high-frequency module 1.

[0032] BBIC 4 is a baseband signal processing circuit that processes signals using an intermediate frequency band lower than the high-frequency signal transmitted by high-frequency module 1. Signals processed by BBIC 4 include, for example, image signals for image display and / or audio signals for communication via a speaker.

[0033] In addition, in the communication device 5 according to this embodiment, the antenna 2 and the BBIC 4 are not essential components.

[0034] [1.2 Circuit Structure of High-Frequency Module 1]

[0035] Next, the circuit structure of the high-frequency module 1 will be described. Figure 1As shown, the high-frequency module 1 includes a transmission filter 11, a reception filter 12, a filter 20, power amplifiers 15 and 25, a low-noise amplifier 35, switches 40, 41, and 42, matching circuits (MN) 13, 23, and 33, an antenna connection terminal 100, transmission input terminals 110 and 120, and a reception output terminal 130.

[0036] The antenna connection terminal 100 is connected to the antenna 2 .

[0037] Transmit input terminal 110 is a terminal for receiving a transmit signal from outside the high-frequency module 1. Specifically, transmit input terminal 110 is a terminal for receiving a transmit signal in communication band A for FDD. Transmit input terminal 120 is a terminal for receiving a transmit signal from outside the high-frequency module 1. Specifically, transmit input terminal 120 is a terminal for receiving a transmit signal in communication band B for TDD. Receive output terminal 130 is a terminal for providing a receive signal to the outside of the high-frequency module 1. Specifically, receive output terminal 130 is a terminal for supplying receive signals in communication bands A and B to RFIC 3.

[0038] Here, the so-called communication frequency band means a frequency band pre-defined by a standardization organization for communication systems, such as 3GPP (3rd Generation Partnership Project), IEEE (Institute of Electrical and Electronics Engineers), etc. The so-called communication system means a communication system built using radio access technology (RAT: Radio Access Technology). As a communication system, for example, a 5GNR (5th Generation New Radio) system, an LTE (Long Term Evolution) system, and a WLAN (Wireless Local Area Network) system can be used, but it is not limited to these.

[0039] Communication band A is an example of a first communication band and is a communication band for FDD. Communication band B is an example of a second communication band and is a communication band for TDD. Communication bands A and B can communicate simultaneously.

[0040] Furthermore, the phrase "multiple communication bands are capable of simultaneous communication" means that at least one of simultaneous transmission, simultaneous reception, and simultaneous transceiver is permitted within the multiple communication bands. This does not preclude the possibility of separate utilization of the multiple communication bands. The combination of communication bands capable of simultaneous communication is predefined, for example, by a standardization organization for communication systems.

[0041] Transmit filter 11 (A-Tx) is an example of a first transmit filter and has a passband that includes the uplink operating frequency band (transmit frequency band) of communication band A. Thus, transmit filter 11 can pass transmit signals in communication band A. The input terminal of transmit filter 11 is connected to the output terminal of power amplifier 15 via matching circuit 13, and the output terminal of transmit filter 11 is connected to select terminal 40b of switch 40.

[0042] The receive filter 12 (A-Rx) is an example of a first receive filter and has a passband that includes the downlink operating frequency band (receive frequency band) of the communication frequency band A. Thus, the receive filter 12 can pass receive signals in the communication frequency band A. The input terminal of the receive filter 12 is connected to the select terminal 40b of the switch 40, and the output terminal of the receive filter 12 is connected to the input terminal of the low-noise amplifier 35 via the switch 42 and the matching circuit 33.

[0043] The transmission filter 11 and the reception filter 12 constitute a duplexer 10 that allows transmission signals and reception signals in the communication frequency band A to pass therethrough.

[0044] Filter 20 (B-TRx) is an example of a second filter and has a passband that includes communication band B. Thus, filter 20 can pass transmit and receive signals in communication band B. One terminal of filter 20 is connected to select terminal 40 c of switch 40 , and the other terminal of filter 20 is connected to common terminal 41 a of switch 41 .

[0045] The power amplifier 15 is an example of a first power amplifier, and is connected between the transmission filter 11 and the transmission input terminal 110 . The power amplifier 15 can amplify a transmission signal in the communication frequency band A input from the transmission input terminal 110 .

[0046] The power amplifier 25 is an example of a second power amplifier, and is connected between the switch 41 and the transmission input terminal 120. The power amplifier 25 can amplify the transmission signal of the communication frequency band B input from the transmission input terminal 120.

[0047] The low-noise amplifier 35 is connected between the switch 42 and the reception output terminal 130. The low-noise amplifier 35 is capable of amplifying (1) a reception signal in the communication frequency band A input from the antenna connection terminal 100 via the switch 40, the reception filter 12, the switch 42, and the matching circuit 33, and (2) a reception signal in the communication frequency band B input from the antenna connection terminal 100 via the switch 40, the filter 20, the switch 41, the switch 42, and the matching circuit 33. The reception signals in the communication frequency bands A and B amplified by the low-noise amplifier 35 are output to the reception output terminal 130.

[0048] Switch 40 is an example of a third switch and is connected between antenna connection terminal 100 and duplexer 10 and filter 20. Specifically, switch 40 has a common terminal 40a and select terminals 40b and 40c. Common terminal 40a is connected to antenna connection terminal 100, select terminal 40b is connected to duplexer 10, and select terminal 40c is connected to filter 20.

[0049] In this connection structure, switch 40 can connect common terminal 40a to at least one of select terminals 40b and 40c based on a control signal from RFIC 3, for example. Specifically, switch 40 switches between connection and disconnection between antenna connection terminal 100 and transmit filter 11 and receive filter 12, and also switches between connection and disconnection between antenna connection terminal 100 and filter 20. Switch 40, for example, includes a multi-connection switch circuit and is sometimes referred to as an antenna switch.

[0050] Switch 41 is an example of a second switch and is connected between filter 20, power amplifier 25, and low-noise amplifier 35. Specifically, switch 41 has a common terminal 41a and select terminals 41b and 41c. Common terminal 41a is connected to the other terminal of filter 20, select terminal 41b is connected to the output terminal of power amplifier 25 via matching circuit 23, and select terminal 41c is connected to reception output terminal 130 via switch 42 and matching circuit 33.

[0051] In this connection structure, switch 41 can connect common terminal 41a to either selection terminal 41b or selection terminal 41c based on a control signal from RFIC 3, for example. That is, switch 41 can switch between the connection between filter 20 and power amplifier 25 and the connection between filter 20 and low-noise amplifier 35. Switch 41 includes, for example, an SPDT (Single Pole Double Throw) type switch circuit, sometimes also referred to as a TDD switch.

[0052] Switch 42 is an example of a first switch and is connected between the receive filter 12 and the filter 20 and the low-noise amplifier 35. Specifically, switch 42 has a common terminal 42a and select terminals 42b and 42c. Common terminal 42a is connected to the input terminal of the low-noise amplifier 35 via the matching circuit 33, select terminal 42b is connected to the output terminal of the receive filter 12, and select terminal 42c is connected to the other terminal of the filter 20 via the switch 41.

[0053] In this connection structure, switch 42 can connect common terminal 42a to either selection terminal 42b or selection terminal 42c based on a control signal from RFIC 3, for example. In other words, switch 42 can switch between the connection between reception filter 12 and low-noise amplifier 35, and between the connection between filter 20 and low-noise amplifier 35. Switch 42 includes, for example, an SPDT-type switch circuit and is sometimes referred to as a band select switch.

[0054] The matching circuit 13 is an example of a first impedance matching circuit, and is connected between the power amplifier 15 and the transmission filter 11. The matching circuit 13 includes, for example, an inductor and / or a capacitor, and can achieve impedance matching between the power amplifier 15 and the transmission filter 11.

[0055] The matching circuit 23 is an example of a second impedance matching circuit, and is connected between the power amplifier 25 and the switch 41. The matching circuit 23 includes, for example, an inductor and / or a capacitor, and can achieve impedance matching between the power amplifier 25 and the filter 20.

[0056] Matching circuit 33 is connected between low-noise amplifier 35 and reception filter 12 and filter 20. Matching circuit 33 includes, for example, inductors and / or capacitors, and can achieve impedance matching between low-noise amplifier 35 and reception filter 12, and between low-noise amplifier 35 and filter 20.

[0057] in addition, Figure 1 Some of the circuit elements shown may not be included in the high-frequency module 1. For example, the high-frequency module 1 only needs to include at least the duplexer 10, the filter 20, the power amplifiers 15 and 25, the low-noise amplifier 35, the switches 41 and 42, and the matching circuits 13 and 23, and may not include other circuit elements.

[0058] Furthermore, the high-frequency module 1 may include a signal path for transmitting a high-frequency signal in a communication frequency band different from the communication frequency bands A and B. Furthermore, in the signal path for transmitting a high-frequency signal in a communication frequency band different from the communication frequency bands A and B, at least a filter having a passband in a communication frequency band different from the communication frequency bands A and B is disposed.

[0059] [2 Flow of Signal Transmission of Communication Device 5]

[0060] Next, refer to Figure 2 The flow of signal transmission between the high-frequency module 1 and the communication device 5 configured as described above will be described. Figure 2 This is a diagram showing the flow of signals in FDD transmission in the high-frequency module 1 and the communication device 5 according to the embodiment.

[0061] As shown in the figure, in the high-frequency module 1 and communication device 5 according to this embodiment, for example, a transmit signal in communication band A and a receive signal in communication band A are simultaneously transmitted. Specifically, the transmit signal in communication band A is output from antenna 2 via transmit input terminal 110, matching circuit 13, transmit filter 11, switch 40, and antenna connection terminal 100. Furthermore, the receive signal in communication band A is output from receive output terminal 130 via antenna 2, antenna connection terminal 100, receive filter 12, switch 42, matching circuit 33, and low-noise amplifier 35.

[0062] At this time, if electromagnetic field coupling occurs between matching circuits 13 and 23, the high-output transmission signal output by power amplifier 15 flows as an unwanted signal through matching circuits 13 and 23 into the transmission path of communication band B. This unwanted signal leaks from selection terminal 41b of switch 41 to selection terminal 41c via the off-state capacitor. Furthermore, the leaked unwanted signal leaks from selection terminal 42c of switch 42, which is in the non-conducting state, to selection terminal 42b and common terminal 42a via the off-state capacitor. Ultimately, the leaked unwanted signal flows into low-noise amplifier 35, degrading the reception sensitivity of the communication band A receive signal transmitted simultaneously with the communication band A transmit signal.

[0063] When transmitting and receiving signals simultaneously in FDD communication band A, duplexer 10 is provided to prevent the transmit signal and receive-band noise output from power amplifier 15 from flowing into the receive path. However, if the sum of the isolation when TDD switch 41 is off and the isolation when band selection switch 42 is off reaches a level comparable to the isolation between the transmitter and receiver of duplexer 10, the aforementioned degradation in reception sensitivity occurs.

[0064] In contrast, the high-frequency module 1 according to this embodiment has a structure that suppresses electromagnetic field coupling between the matching circuits 13 and 23. The structure of the high-frequency module 1 according to this embodiment that suppresses the electromagnetic field coupling will be described below.

[0065] [3 High-Frequency Module Component Configuration]

[0066] Next, refer to Figure 3The component arrangement of the high-frequency module 1 configured as described above will be specifically described.

[0067] Figure 3 1 is a top view of the high-frequency module 1 according to the embodiment. Figure 3 This is a diagram showing the main surface 91a of the module substrate 91 as viewed from the positive side of the z-axis. Figure 3 As shown, the high frequency module 1 has Figure 1 In addition to the circuit components of the illustrated circuit, a module substrate 91 is further provided.

[0068] Module substrate 91 has a main surface 91a with the z-axis as its normal. For example, a low-temperature co-fired ceramic (LTCC) substrate with a laminated structure of multiple dielectric layers, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board can be used as module substrate 91, but the present invention is not limited to these. Antenna connection terminals 100, transmit input terminals 110 and 120, and receive output terminal 130 may also be formed on module substrate 91.

[0069] like Figure 3 As shown, the duplexer 10 , the filter 20 , the power amplifiers 15 and 25 , the low-noise amplifier 35 , the switches 40 , 41 , and 42 , and the matching circuits (MN) 13 , 23 , and 33 are arranged on the main surface 91 a .

[0070] In addition, although not shown in the figure, the structure includes Figure 1 The signal path wiring for the transmission and reception paths shown is formed within the module substrate 91 and on the main surface 91a. Alternatively, the wiring may be a bonding wire whose ends are bonded to the main surface 91a or to any of the circuit components constituting the high-frequency module 1, or a terminal, electrode, or wiring formed on the surface of a circuit component constituting the high-frequency module 1.

[0071] Furthermore, a resin member may be disposed so as to cover the circuit components disposed on the main surface 91 a . Furthermore, a metal shield layer may be formed in contact with the outer surface of the resin member and the side surface of the module substrate 91 .

[0072] Here, in a plan view of the module substrate 91 , the power amplifiers 15 and 25 and the switch 41 are respectively arranged between the matching circuit 13 and the matching circuit 23 .

[0073] Thus, power amplifiers 15 and 25 and switch 41 are arranged between matching circuits 13 and 23, ensuring a relatively large distance between them. Furthermore, the conductive components of power amplifiers 15 and 25 and switch 41 are interposed between matching circuits 13 and 23. This suppresses electromagnetic field coupling between matching circuits 13 and 23, thereby preventing unwanted signals from the transmission signal in communication band A from flowing into the reception path of communication band A via the electromagnetic field coupling, switches 41, and 42. Consequently, the isolation between the transmitter and receiver in communication band A for FDD can be improved, and degradation of reception sensitivity can be suppressed.

[0074] The duplexer 10 , the filter 20 , the low-noise amplifier 35 , the matching circuit 33 , and the switches 40 and 42 may be arranged on the main surface opposite to the main surface 91 a , or may be built into the module substrate 91 .

[0075] In addition, when the module substrate 91 is viewed from above, the matching circuit 13 and the power amplifier 15 are adjacent to each other without a conductive member interposed therebetween.

[0076] This allows shortening of the wiring connecting the matching circuit 13 and the power amplifier 15 , thereby reducing the transmission loss of the transmission signal in the communication frequency band A.

[0077] Furthermore, in a plan view of the module substrate 91 , the matching circuit 23 and the power amplifier 25 are adjacent to each other without a conductive member interposed therebetween.

[0078] This allows the connection wiring between the matching circuit 23 and the power amplifier 25 to be shortened, thereby reducing the transmission loss of the transmission signal in the communication frequency band B.

[0079] The conductive component is an electronic component having a conductive member such as a signal extraction electrode, and is, for example, at least one of active elements such as a chip resistor, a chip capacitor, a chip inductor, a filter, a switch, an amplifier, and a control circuit.

[0080] Figure 4This is a top view of a high-frequency module 1A according to Modification 1 of the embodiment. As shown in this figure, in this modification, a duplexer 10, a filter 20, power amplifiers 15 and 25, a low-noise amplifier 35, switches 40, 41, and 42, and matching circuits (MN) 13, 23, and 33 are arranged on a main surface 91a. This modification differs from the high-frequency module 1 according to the embodiment in the arrangement of the matching circuits 13 and 23, the power amplifiers 15 and 25, and the switch 41, as well as the addition of a metal shield 95. The following description of this modification will omit the commonalities between this modification and the high-frequency module 1 according to the embodiment, and will focus on the differences.

[0081] The metal shield layer 95 is formed in contact with the outer surface of the resin member covering the circuit components arranged on the main surface 91a and the side surface of the module substrate 91. In this modification, the metal shield layer 95 and the resin member may be omitted.

[0082] Here, in a plan view of the module substrate 91 , the power amplifiers 15 and 25 and the switch 41 are respectively arranged between the matching circuit 13 and the matching circuit 23 .

[0083] Thus, power amplifiers 15 and 25 and switch 41 are arranged between matching circuits 13 and 23, ensuring a relatively large distance between matching circuits 13 and 23. This reduces electromagnetic field coupling between matching circuits 13 and 23, thereby preventing unwanted signals from the transmission signal in communication band A from flowing into the reception path of communication band A via the electromagnetic field coupling, switches 41, and 42. Consequently, the isolation between the transmitter and receiver in FDD communication band A can be improved, and degradation of reception sensitivity can be suppressed.

[0084] The configuration of the high-frequency module 1A according to this modification example differs from the configuration of the high-frequency module 1 according to the embodiment in that the power amplifier 15 is arranged on the negative side of the matching circuit 13 in the x-axis direction.

[0085] This allows for reducing the layout area of the matching circuits 13 and 23 , the power amplifiers 15 and 25 , and the switch 41 , thereby enabling miniaturization of the high-frequency module 1A.

[0086] Figure 5This is a top view of a high-frequency module 1B according to a second variation of the embodiment. As shown in this figure, in this variation, a duplexer 10, a filter 20, power amplifiers 15 and 25, a low-noise amplifier 35, switches 40, 41, and 42, and matching circuits (MN) 13, 23, and 33 are arranged on a main surface 91a. This variation differs from the high-frequency module 1 according to the embodiment in the arrangement of the matching circuits 13 and 23, the power amplifiers 15 and 25, and the switch 41, as well as the addition of a metal shield layer 95. The following description of the high-frequency module 1B according to this variation, while omitting the commonalities with the high-frequency module 1 according to the embodiment, focuses on the differences.

[0087] The metal shield layer 95 is formed in contact with the outer surface of the resin member covering the circuit components arranged on the main surface 91a and the side surface of the module substrate 91. In this modification, the metal shield layer 95 and the resin member may be omitted.

[0088] Here, in a plan view of the module substrate 91 , the power amplifiers 15 and 25 and the switch 41 are respectively arranged between the matching circuit 13 and the matching circuit 23 .

[0089] Thus, power amplifiers 15 and 25 and switch 41 are arranged between matching circuits 13 and 23, ensuring a relatively large distance between matching circuits 13 and 23. This reduces electromagnetic field coupling between matching circuits 13 and 23, thereby preventing unwanted signals from the transmission signal in communication band A from flowing into the reception path of communication band A via the electromagnetic field coupling, switches 41, and 42. Consequently, the isolation between the transmitter and receiver in FDD communication band A can be improved, and degradation of reception sensitivity can be suppressed.

[0090] The configuration of the high-frequency module 1B according to this modification example differs from the configuration of the high-frequency module 1 according to the embodiment in that the power amplifier 25 is arranged on the negative side of the matching circuit 23 in the x-axis direction.

[0091] This allows for reducing the layout area of the matching circuits 13 and 23 , the power amplifiers 15 and 25 , and the switch 41 , thereby enabling miniaturization of the high-frequency module 1B.

[0092] [4 Effects, etc.]

[0093] As described above, the high-frequency module 1 involved in this embodiment comprises: a transmitting filter 11, having a passband of an uplink operating frequency band including a communication frequency band A for FDD; a receiving filter 12, having a passband of a downlink operating frequency band including a communication frequency band A; a filter 20, having a passband including a communication frequency band B for TDD; a power amplifier 15, capable of amplifying a transmitting signal of a communication frequency band A; a power amplifier 25, capable of amplifying a transmitting signal of a communication frequency band B; a low-noise amplifier 35, capable of amplifying a receiving signal of a communication frequency band A and a switch 42, for connecting the receiving filter 12 and the low-noise amplifier 35 and the filter 20 and the low-noise amplifier 35; The connection of the noise amplifier 35 is switched; the switch 41 switches the connection between the filter 20 and the power amplifier 25 and the connection between the filter 20 and the low noise amplifier 35; the matching circuit 13 is connected between the power amplifier 15 and the transmitting filter 11; the matching circuit 23 is connected between the power amplifier 25 and the switch 41; and the module substrate 91 has a main surface 91a, and the power amplifiers 15 and 25, the switch 41, the matching circuits 13 and 23 are arranged on the main surface 91a. When looking down at the module substrate 91, the power amplifiers 15 and 25 and the switch 41 are respectively arranged between the matching circuit 13 and the matching circuit 23.

[0094] Thus, power amplifiers 15 and 25 and switch 41 are arranged between matching circuits 13 and 23, ensuring a relatively large distance between them. Furthermore, the conductive components of power amplifiers 15 and 25 and switch 41 are interposed between matching circuits 13 and 23. This suppresses electromagnetic field coupling between matching circuits 13 and 23, thereby preventing unwanted signals from the transmission signal in communication band A from flowing into the reception path of communication band A via the electromagnetic field coupling, switches 41, and 42. Consequently, the isolation between the transmitter and receiver in communication band A for FDD can be improved, and degradation of reception sensitivity can be suppressed.

[0095] Furthermore, in the high-frequency module 1 , when the module substrate 91 is viewed in plan, the matching circuit 13 and the power amplifier 15 may be adjacent to each other without a conductive member interposed therebetween.

[0096] This allows the connection wiring between the matching circuit 13 and the power amplifier 15 to be shortened, thereby reducing the transmission loss of the transmission signal in the communication frequency band A.

[0097] Furthermore, in the high-frequency module 1 , when the module substrate 91 is viewed in plan, the matching circuit 23 and the power amplifier 25 may be adjacent to each other without a conductive member interposed therebetween.

[0098] This allows the connection wiring between the matching circuit 23 and the power amplifier 25 to be shortened, thereby reducing the transmission loss of the transmission signal in the communication frequency band B.

[0099] Furthermore, the high-frequency module 1 may further include a switch 40 that switches between connection and disconnection between the antenna connection terminal 100 and the transmission filter 11 and the reception filter 12 , and switches between connection and disconnection between the antenna connection terminal 100 and the filter 20 .

[0100] This improves the isolation between the signal path of communication band A and the signal path of communication band B.

[0101] Furthermore, the communication device 5 according to the present embodiment includes an RFIC 3 for processing a high-frequency signal and a high-frequency module 1 for transmitting the high-frequency signal between the RFIC 3 and the antenna 2 .

[0102] Thus, the communication device 5 can achieve the same effects as those achieved by the high-frequency module 1 .

[0103] (Other Embodiments)

[0104] While the high-frequency module and communication device according to the present invention have been described above based on the embodiments and variations, the high-frequency module and communication device according to the present invention are not limited to the aforementioned embodiments and variations. Other embodiments implemented by combining arbitrary components of the aforementioned embodiments and variations, variations resulting from various modifications conceived by those skilled in the art to the aforementioned embodiments and variations without departing from the spirit of the present invention, and various devices incorporating the aforementioned high-frequency module and communication device are also encompassed by the present invention.

[0105] For example, in the component arrangement structure of the high-frequency module according to the above embodiment, the circuit components constituting the high-frequency module are arranged on a single main surface of the module substrate 91. However, the circuit components constituting the high-frequency module may also be arranged separately on the first and second opposing main surfaces of the module substrate 91. In other words, the circuit components constituting the high-frequency module may be mounted on either one or both sides of the module substrate 91.

[0106] For example, in the circuit configurations of the high-frequency modules and communication devices according to the above-described embodiments and variations, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths shown in the drawings. For example, in the above-described embodiments and variations, a filter or matching circuit may be inserted between the antenna connection terminal 100 and the switch 40.

[0107] Industrial applicability

[0108] The present invention can be widely used in communication devices such as mobile phones as a high-frequency circuit arranged at the front end.

[0109] Description of Reference Numerals

[0110] 1. 1A, 1B high frequency modules;

[0111] 2 antennas;

[0112] 3 RF signal processing circuit (RFIC);

[0113] 4 baseband signal processing circuit (BBIC);

[0114] 5 communication devices;

[0115] 10 duplexer;

[0116] 11 transmit filter;

[0117] 12 receiving filter;

[0118] 13, 23, 33 matching circuits;

[0119] 15, 25 power amplifier;

[0120] 20 filters;

[0121] 35 Low Noise Amplifier;

[0122] 40, 41, 42 switches;

[0123] 40a, 41a, 42a common terminals;

[0124] 40b, 40c, 41b, 41c, 42b, 42c select terminals;

[0125] 91 module baseboard;

[0126] 91a Main side;

[0127] 95 metal shielding layer;

[0128] 100 antenna connection terminal;

[0129] 110, 120 send input terminals;

[0130] 130 Receive output terminal.

Claims

1. A high-frequency module comprising: The first transmission filter has a passband including an uplink operating frequency band of a first communication frequency band for frequency division duplex (FDD); a first receiving filter having a passband including a downlink operating frequency band of the first communication frequency band; The second filter has a passband including a second communication frequency band for time division duplex (TDD); a first power amplifier capable of amplifying a transmission signal in the first communication frequency band; a second power amplifier capable of amplifying a transmission signal in the second communication frequency band; a low-noise amplifier capable of amplifying a received signal in the first communication frequency band and a received signal in the second communication frequency band; a first switch for switching a connection between the first reception filter and the low noise amplifier and a connection between the second reception filter and the low noise amplifier; a second switch for switching a connection between the second filter and the second power amplifier and a connection between the second filter and the low noise amplifier; a first impedance matching circuit connected between the first power amplifier and the first transmission filter; a second impedance matching circuit connected between the second power amplifier and the second switch; and A module substrate having a main surface, The first power amplifier, the second power amplifier, the second switch, the first impedance matching circuit, and the second impedance matching circuit are arranged on the main surface. In a plan view of the module substrate, the first power amplifier, the second power amplifier, and the second switch are respectively arranged between the first impedance matching circuit and the second impedance matching circuit.

2. The high-frequency module according to claim 1, wherein In a plan view of the module substrate, the first impedance matching circuit and the first power amplifier are adjacent to each other without a conductive member interposed therebetween.

3. The high-frequency module according to claim 1 or 2, wherein: In a plan view of the module substrate, the second impedance matching circuit and the second power amplifier are adjacent to each other without a conductive member interposed therebetween.

4. The high-frequency module according to claim 1 or 2, wherein: The device further includes a third switch that switches between connection and disconnection between the antenna connection terminal and the first transmission filter and the first reception filter, and switches between connection and disconnection between the antenna connection terminal and the second filter.

5. A communication device comprising: a signal processing circuit for processing high frequency signals; and The high-frequency module according to any one of claims 1 to 4 is configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

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