Integrated device and method of manufacturing the same

Abstract

The present application provides an integrated device, comprising: a substrate; a modulation region, a front grating region, a laser gain region, and a back grating region arranged in sequence on the same surface of the substrate; the modulation region comprises at least two sub-modulator regions, wherein the band gap wavelength of the modulation region is shorter than that of the laser gain region, and the band gap wavelengths of the at least two sub-modulator regions are different; the front grating region, the laser gain region, and the back grating region constitute a wide tunable laser for emitting laser with a wide tunable wavelength; the at least two sub-modulator regions are used for switching according to the lasing wavelength of the laser or sharing the at least two sub-modulator regions to modulate the intensity of the laser. Another aspect of the present application provides a preparation method of the above integrated device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic integrated devices, and particularly to an integrated device and its fabrication method. Background Technology

[0002] With the rapid development of the Internet and people's increasing demands for network bandwidth, optical communication solutions are developing in two directions: wide wavelength range and high modulation rate. How to combine the two and achieve an integrated device with wide wavelength tunability and high modulation rate performance is a major challenge. Electroabsorption modulators usually have a significant absorption effect on a single wavelength, but their absorption capability for wide-tunable wavelengths is insufficient. Summary of the Invention

[0003] (a) Technical problems to be solved

[0004] In view of this, the present invention provides an integrated device and its fabrication method, mainly in the integration of a wide tunable laser and an electroabsorption modulator, to solve or partially solve the above-mentioned problems.

[0005] (II) Technical Solution

[0006] The present invention provides an integrated device comprising: a substrate; a modulation region, a front grating region, a laser gain region, and a rear grating region arranged sequentially on the same surface of the substrate; the modulation region comprising at least two sub-modulator regions, wherein the bandgap wavelength of the modulation region is shorter than the bandgap wavelength of the laser gain region, and the bandgap wavelengths of the at least two sub-modulator regions are different; the front grating region, the laser gain region, and the rear grating region constitute a wide-tunable laser for emitting laser light with a wide-tunable wavelength; the at least two sub-modulator regions are used to selectively switch or share at least two sub-modulator regions to modulate the intensity of the laser light according to the lasing wavelength of the laser light.

[0007] Optionally, the bandgap wavelength of the modulation region is 30–100 nm shorter than the bandgap wavelength of the laser gain region.

[0008] Optionally, the modulation region includes a first sub-modulator region and a second sub-modulator region; the bandgap wavelength of the first sub-modulator region is 30-50 nm shorter than the bandgap wavelength of the laser gain region; and the bandgap wavelength of the second sub-modulator region is 50-100 nm shorter than the bandgap wavelength of the laser gain region.

[0009] Optionally, the bandgap wavelength of the laser gain region in the front grating region is 90–200 nm shorter; the bandgap wavelength of the laser gain region in the rear grating region is 90–200 nm shorter.

[0010] Optionally, the materials for the modulation region and the laser gain region are InGaAsP or InGaAlAs quantum well materials; the materials for the front grating region and the rear grating region are InGaAsP or InGaAlAs bulk materials.

[0011] Optionally, the modulation region and laser gain region, from the substrate upwards, are structured as a lower waveguide layer, an active layer, and an upper waveguide layer.

[0012] Optionally, the integrated device further includes: a cladding layer formed on the modulation region, the front grating region, the laser gain region, and the rear grating region; an electrical contact layer formed on the cladding layer; a P electrode formed on the electrical contact layer; and an N electrode formed on the bottom of the substrate.

[0013] Optionally, the cladding and electrical contact layer have an electrical isolation trench between at least two sub-modulator regions, a front grating region, a laser gain region, and a rear grating region.

[0014] Another aspect of the present invention provides a method for fabricating the above-mentioned integrated device, comprising: sequentially stacking and growing a first lower waveguide layer, a first active layer, and a first upper waveguide layer on a substrate; fabricating a first SiO2 strip structure on the first upper waveguide layer in the laser gain region; etching away the first lower waveguide layer, the first active layer, and the first upper waveguide layer except for those covered by the first SiO2 strip structure; respectively mating and growing a second lower waveguide layer, a second active layer, and a second upper waveguide layer for at least two sub-modulator regions on a substrate in the modulation region; removing the first SiO2 strip structure; fabricating a second SiO2 strip structure on the upper waveguide layer of at least two sub-modulator regions and the first upper waveguide layer in the laser gain region; etching away the first lower waveguide layer, the first active layer, the first upper waveguide layer, the lower waveguide layer of at least two sub-modulator regions, the active layer, and the upper waveguide layer except for those covered by the second SiO2 strip structure; mating and growing a grating layer on a substrate in the front grating region and the rear grating region; and fabricating a grating on the surface of the grating layer.

[0015] Optionally, the fabrication method further includes: fabricating a cladding layer on the first upper waveguide layer, the upper waveguide layer of at least two sub-modulator regions, and the grating layer; fabricating an electrical contact layer on the cladding layer; fabricating the cladding layer and the electrical contact layer into an inverted shallow ridge waveguide structure; etching the electrical contact layer at the boundary lines of at least two sub-modulator regions, the front grating region, the laser gain region, and the rear grating region to obtain an isolation trench, with the etching depth reaching the bottom of the cladding layer; performing He ion implantation on the isolation trench to obtain an electrically isolated trench; fabricating a P electrode on the electrical contact layer; thinning the bottom of the substrate and fabricating an N electrode on the bottom of the substrate.

[0016] (III) Beneficial Effects

[0017] This invention provides an integrated device and fabrication method of a wide-wavelength tunable laser and an electro-absorption modulator. By integrating a sampled grating tunable laser and an electro-absorption modulator together, it solves the problem of integrating a wide wavelength tunability range of a sampled grating tunable laser with an electro-absorption modulator. Specifically, by dividing the electro-absorption modulator into multiple segments, it achieves integration with a tunable laser with a wavelength tuning range greater than 40nm. Depending on the operating range of the tuning wavelength, multiple segments of the electro-absorption modulator can be switched or shared in real time, enabling wide wavelength tunability and high modulation rate performance to be achieved simultaneously. This provides a new optical emission chip solution for optical communication systems. Attached Figure Description

[0018] Figure 1 A schematic diagram of the integrated device provided by the present invention is shown.

[0019] Figure 2 The schematic diagram illustrates the structure corresponding to step S1 of the fabrication of the integrated device provided by the present invention;

[0020] Figure 3 The schematic diagram illustrates the structure corresponding to step S2 of the fabrication of the integrated device provided by the present invention;

[0021] Figure 4 The schematic diagram illustrates the structure corresponding to step S3 of the fabrication of the integrated device provided by the present invention;

[0022] Figure 5 The schematic diagram illustrates the structure corresponding to step S4 of the fabrication of the integrated device provided by the present invention;

[0023] Figure 6 The schematic diagram illustrates the structure corresponding to step S5 of the fabrication of the integrated device provided by the present invention;

[0024] Figure 7 The schematic diagram illustrates the structure corresponding to step S6 of the fabrication of the integrated device provided by the present invention;

[0025] Figure 8 The diagram schematically illustrates the structure corresponding to step S7 of the fabrication of the integrated device provided by the present invention.

[0026] Figure 9 The schematic diagram illustrates the structure corresponding to step S8 of the fabrication of the integrated device provided by the present invention;

[0027] Figure 10 The schematic diagram illustrates the structure corresponding to step S9 of the fabrication of the integrated device provided by the present invention;

[0028] Figure 11 The schematic diagram illustrates the structure corresponding to step S10 of the fabrication of the integrated device provided by the present invention;

[0029] Figure 12 The schematic diagram illustrates the structure corresponding to step S11 of the fabrication of the integrated device provided by the present invention;

[0030] Figure 13 The schematic diagram illustrates the structure corresponding to step S12 of the fabrication of the integrated device provided by the present invention. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0032] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0033] Typically, an electro-absorption modulator (EAB) is reverse-biased, changing its bandgap until it corresponds to the lasing wavelength of the laser, thus absorbing the laser beam and modulating a single wavelength. However, when a wide-tunable laser is integrated with an EAB, the laser wavelength range increases, but the modulation efficiency decreases, and some laser wavelengths may even exceed the modulation range, rendering the modulator ineffective. Since EAB typically exhibits significant absorption for single wavelengths, its absorption capability across a wide range of tunable wavelengths is insufficient. Therefore, combining a wide-tunable laser with an EAB to achieve a device that integrates wide-wavelength tunability and high modulation rate performance remains a major challenge.

[0034] This invention provides an integrated device for solving or partially solving the above-mentioned problems, such as... Figure 1 As shown, its structure includes: a substrate 10; a modulation region 01, a front grating region 02, a laser gain region 03, and a rear grating region 04 arranged sequentially on the same surface of the substrate 10; the modulation region 01 includes at least two sub-modulator regions, wherein the bandgap wavelength of the modulation region 01 is shorter than the bandgap wavelength of the laser gain region 03, and the bandgap wavelengths of the at least two sub-modulator regions are different; the front grating region 02, the laser gain region 03, and the rear grating region 04 constitute a wide-tunable laser for emitting laser with a wide-tunable wavelength; the at least two sub-modulator regions are used to selectively switch or share at least two sub-modulator regions to modulate the intensity of the laser according to the lasing wavelength of the laser.

[0035] The integrated device provided by this invention integrates a modulator and a tunable laser on the same substrate 10. Specifically, it divides the modulation region 01 into at least two sub-modulator regions, further dividing the modulator into multiple sub-modulator regions, each with a different bandgap wavelength. Figure 1 As shown, modulation region 01 includes at least two sub-modulator regions, meaning that the number N in the figure is greater than or equal to 1. The bandgap wavelength of laser gain region 03 can be freely selected according to the actual required wavelength band, while the bandgap wavelength of each sub-modulator region is set according to the bandgap wavelength of laser gain region 03. For example, when the wavelength of laser gain region 03 is set to 1550nm, there are 3 sub-modulator regions, each set between 1520-1490nm, 1490nm-1470nm, and 1470-1450nm respectively. The bandgap wavelengths of at least two sub-modulator regions are set and selected autonomously according to the required tuning range of the laser wavelength.

[0036] This invention provides an integrated device and fabrication method of a wide-wavelength tunable laser and an electro-absorption modulator. By integrating a sampled grating tunable laser and an electro-absorption modulator together, it solves the problem of integrating a wide wavelength tunability range of a sampled grating tunable laser with an electro-absorption modulator. Specifically, by dividing the electro-absorption modulator into multiple segments, it achieves integration with a tunable laser with a wavelength tuning range greater than 40nm. Depending on the operating range of the tuning wavelength, multiple segments of the electro-absorption modulator can be switched or shared in real time, enabling wide wavelength tunability and high modulation rate performance to be achieved simultaneously. This provides a new optical emission chip solution for optical communication systems.

[0037] The modulation region 01 of the integrated device provided by this invention has a bandgap wavelength that is 30-100 nm shorter than the bandgap wavelength of the laser gain region 03. Within this wavelength range, the modulation region can achieve higher absorption efficiency. Preferably, the optimal modulation effect is achieved when the bandgap wavelengths of at least two sub-modulator regions are 30-50 nm shorter than the wavelength of the laser gain region 03. These at least two sub-modulator regions achieve less light absorption when not in operation and higher absorption efficiency when in operation.

[0038] In one embodiment of the present invention, at least two sub-modulator regions can be selected, namely, modulation region 01 includes a first sub-modulator region 05 and a second sub-modulator region 06. Typically, the total length of the modulator is limited, for example, the total length of the modulator can be selected as 100 μm. Setting modulation region 01 into two segments reduces fabrication costs and increases operability while achieving the goal of integrating a device with wide wavelength tunability and high modulation rate performance. The bandgap wavelength of the first sub-modulator region 05 is 30–50 nm shorter than the bandgap wavelength of the laser gain region 03; the bandgap wavelength of the second sub-modulator region 06 is 50–100 nm shorter than the bandgap wavelength of the laser gain region 03.

[0039] In another embodiment of the present invention, the bandgap wavelength of the laser gain region 03 in the front grating region 02 is 90-200 nm shorter; the bandgap wavelength of the laser gain region 03 in the rear grating region 04 is also 90-200 nm shorter. The bandgap wavelengths of the front and rear grating regions 04 are shorter than those of the laser gain region 03, mainly to prevent the laser beam from being absorbed in the front and rear grating regions 04.

[0040] In this invention, the modulation region 01 and the laser gain region 03 are made of InGaAsP or InGaAlAs quantum well materials; the front grating region 02 and the rear grating region 04 are made of InGaAsP or InGaAlAs bulk materials. Quantum well materials are the light-emitting layers of the laser, with multiple pairs of wells and barriers growing alternately; they are materials used in semiconductor lasers and are called active materials. Bulk materials are materials that are uniform throughout their thickness and are called passive materials, not participating in the lasing emission of the laser. The structure of the modulation region 01 and the laser gain region 03 from the substrate 10 upwards is, in order, a lower waveguide layer, an active layer, and an upper waveguide layer, for example... Figure 1 The first lower waveguide layer 11, the first active layer 12, the first upper waveguide layer 13, the second lower waveguide layers 15, 15-1...15-N, the second active layer 16, 16-1...16-N, and the second upper waveguide layers 17, 17-1...17-N, wherein N is greater than or equal to 1.

[0041] In this invention, the integrated device further includes: a cladding layer 21 formed on the modulation region 01, the front grating region 02, the laser gain region 03, and the rear grating region 04; an electrical contact layer 22 formed on the cladding layer 21; a P-electrode 24 formed on the electrical contact layer 22; and an N-electrode 25 formed on the bottom of the substrate 10. The cladding layer 21 and the electrical contact layer 22 have at least two electrical isolation trenches 23 between the sub-modulator regions, the front grating region 02, the laser gain region 03, and the rear grating region 04.

[0042] Another aspect of the present invention provides a method for fabricating the above-mentioned integrated device, comprising:

[0043] A first lower waveguide layer 11, a first active layer 12, and a first upper waveguide layer 13 are sequentially stacked on the substrate 10.

[0044] A first SiO2 strip structure 14 is fabricated on the first upper waveguide layer 13 in the laser gain region 03.

[0045] The first lower waveguide layer 11, the first active layer 12, and the first upper waveguide layer 13, which are covered by the first SiO2 strip structure 14, are etched away.

[0046] At least two sub-modulator regions, namely a second lower waveguide layer, a second active layer, and a second upper waveguide layer, are respectively grown on the substrate 10 of the modulation region 01.

[0047] Remove the first SiO2 strip structure 14.

[0048] A second SiO2 strip structure 18 is fabricated on the upper waveguide layer of at least two sub-modulator regions and the first upper waveguide layer 13 of the laser gain region 03.

[0049] The first lower waveguide layer 11, the first active layer 12, the first upper waveguide layer 13, and the lower waveguide layer, active layer, and upper waveguide layer of at least two sub-modulator regions covered by the second SiO2 strip structure 18 are etched away.

[0050] A grating layer 19 is grown on a substrate 10 on the front grating region 02 and the rear grating region 04.

[0051] Grating 20 is fabricated in grating layer 19.

[0052] A cladding 21 is fabricated on the first upper waveguide layer 13, the upper waveguide layer of at least two sub-modulator regions, and the grating layer 19.

[0053] An electrical contact layer 22 is prepared on the cladding.

[0054] The cladding 21 and the electrical contact layer 22 are fabricated into an inverted shallow ridge waveguide structure.

[0055] The electrical contact layer 22 is etched at the boundary of at least two sub-modulator regions, the front grating region 02, the laser gain region 03, and the rear grating region 04 to obtain an isolation trench, with the etching depth reaching the bottom of the cladding layer 21.

[0056] He ion implantation was performed on the isolation trench to obtain electrically isolated trench 23.

[0057] A P electrode 24 is fabricated on the electrical contact layer 22.

[0058] The bottom of substrate 10 is thinned and an N-electrode 25 is prepared on the bottom of substrate 10.

[0059] Specifically, taking the modulation region as an example with two sub-modulator regions, combined with the attached... Figures 1-12 One embodiment is described below.

[0060] Step S1: Select an N-type indium phosphide substrate 10, and sequentially grow a first lower waveguide layer 11 (bandgap wavelength of 1200 nm), a first active layer 12 (bandgap wavelength of 1550 nm), and a first upper waveguide layer 13 (bandgap wavelength of 1200 nm) of InGaAsP material on the substrate 10 using metal-organic chemical vapor deposition (MOCVD). The growth temperature is 680℃, the growth pressure is 100 mbar, and the thickness of the first lower waveguide layer 11 and the first upper waveguide layer 13 is 90 nm. The first active layer 12 comprises 5 compressive strain well layers, each 5 nm thick, and 6 tensile strain barrier layers, each 9 nm thick. The first active layer 12 is sandwiched between the first lower waveguide layer 11 and the first upper waveguide layer 13, forming a sandwich structure. Figure 2 As shown, region 01 is the modulation region, region 02 is the front grating region, region 03 is the laser gain region, and region 04 is the rear grating region. The regions are separated by dashed lines.

[0061] Step S2: A 150 nm thick SiO2 layer is grown on the first upper waveguide layer 13 at a growth temperature of 300 °C and a growth pressure of 100 Pa. A 1 μm thick photoresist mask is used to etch a 30 μm wide first SiO2 strip structure 14 using buffered oxide etchant (BOE) to protect the laser gain region 03. Top view shown... Figure 3 As shown.

[0062] Step S3: The InGaAsP material outside the first SiO2 strip structure 14 in the laser gain region 03 is removed by RIE etching. The etching pressure is 0.067 mbar, the power is 150 W, the reaction gas is CH4:H2 = 18:45, and the etching time is 5 minutes. Figure 4 As shown.

[0063] Step S4: Clean the substrate 10 with trichloroethylene, acetone, and ethanol respectively. Etch away the remaining InGaAsP material from the RIE etching using H2SiO4 and H2O2. After the substrate 10 is dried, immerse it in a concentrated H2SiO4 solution for 20 seconds for surface passivation. Then rinse with deionized water and dry. Using MOCVD, sequentially grow the following materials for the sub-modulator region 05: the second lower waveguide layer 15 (bandgap wavelength 1200nm), the second active layer 16 (bandgap wavelength 1500nm), and the second upper waveguide layer 17 (bandgap wavelength 1200nm) of InGaAsP. The growth temperature is 680℃, the growth pressure is 100mbar, the thickness of the second lower waveguide layer 15 and the second upper waveguide layer 17 is 90nm, and the second active layer 16 contains 5 compressive strain well layers, each 9nm thick, and 6 tensile strain barrier layers, each 5nm thick. Figure 5 As shown.

[0064] Step S5: Using the same method, grow the active layer material of another sub-modulator region 06: second lower waveguide layer 15-1 (bandgap wavelength of 1200nm), second active layer 16-1 (bandgap wavelength of 1470nm), and second upper waveguide layer 17-1 (bandgap wavelength of 1200nm). Figure 6 As shown, modulation area 01 includes two sub-modulator areas: the first sub-modulator area 05 and the second sub-modulator area 06.

[0065] Step S6: Etch away the first SiO2 strip structure 14, regenerate the SiO2 layer, and use photolithography and wet etching to form a 20μm wide second SiO2 strip structure 18 for the laser gain region 03 and the two sub-modulator regions 05 and 06. (See attached image) Figure 7 As shown in the top view.

[0066] Step S7: The InGaAsP material outside the laser gain region 03 and the two sub-modulator regions 05 and 06 is removed using the RIE method. The reactive etching pressure is 0.067 mbar, the power is 150 W, the reactive gas is CH4:H2 = 18:45, and the etching time is 5 minutes. Figure 8 As shown.

[0067] Step S8: Clean the substrate 10 with trichloroethylene, acetone, and ethanol respectively. Etch away the remaining InGaAsP material from the RIE etching using H2SiO4 and H2O2. After the substrate 10 is dried, immerse it in a concentrated H2SiO4 solution for 20 seconds for surface passivation. Then rinse with deionized water and dry. Use MOCVD to connect the grating layer 19, which is made of InGaAsP bulk material, to the grating region 02 before growth and the grating region 04 after growth. The growth temperature is 630℃, the growth pressure is 100mbar, and its bandgap wavelength (1400nm) is smaller than the laser emission wavelength. Figure 9 As shown.

[0068] Step S9: A grating 20 is fabricated on the grating layer 19 in the front grating region 02 and the rear grating region 04. A p-type Zn-doped InP cladding layer 21 (1500 nm thick) and an InGaAs electrical contact layer 22 (200 nm thick) are grown on the entire die surface using MOCVD at a growth temperature of 630°C and a growth pressure of 100 mbar. Figure 10 As shown.

[0069] Step S10: On the cladding layer 21 and electrical contact layer 22, a 3μm strip mask is photolithographically etched using 1μm photoresist. Then, an inverted shallow ridge waveguide structure is fabricated using etchants Br2:HBr:H2O = 1:25:80 (etching time 40 seconds) and HCl:H2O = 9:1 (etching time 3 minutes). The cross-sectional view of the inverted shallow ridge waveguide structure is shown below. Figure 11As shown.

[0070] Step S11: Photolithographically pattern the isolation trench on the electrical contact layer 22 using a 3μm thick photoresist. Etch with an etchant solution H2SiO4:H2O2:H2O = 3:1:1 for 10 seconds to create electrical isolation trenches (50μm wide) between regions. Simultaneously, He ions are implanted into the isolation trenches to obtain electrical isolation trench 23. The implantation energy is 200keV and the implantation dose is 10. 14 cm -2 Electrical isolation is achieved between different functional areas. For example... Figure 12 As shown.

[0071] Step S12: Fabricate P-electrodes 24 on the electrical contact layer 22 of the two sub-modulator regions 05 and 06, the laser gain region 03, the front grating region 02, and the rear grating region 04. After thinning the bottom of the substrate 10, fabricate N-electrodes 25 on the bottom to complete the die fabrication. Figure 13 Show.

[0072] In the description of this invention, it should be understood that the terms "longitudinal", "length", "circumferential", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", "upper", "lower", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0073] Throughout the accompanying drawings, identical elements are represented by the same or similar reference numerals. Conventional structures or constructions have been omitted where they may cause confusion in understanding this disclosure. Furthermore, the shapes, dimensions, and positional relationships of the components in the drawings do not reflect actual size, scale, or actual positional relationships. Additionally, any reference numerals placed between parentheses in the claims should not be construed as limiting the claims.

[0074] Similarly, to simplify this disclosure and aid in understanding one or more of the various aspects of the disclosure, in the above description of exemplary embodiments of the present disclosure, various features of the present disclosure are sometimes grouped together in a single embodiment, figure, or description thereof. The use of terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refers to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the present disclosure. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0075] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0076] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An integrated device, characterized in that, include: Substrate (10); A modulation region (01), a front grating region (02), a laser gain region (03), and a rear grating region (04) are arranged sequentially on the same surface of the substrate (10); the modulation region (01) includes at least two sub-modulator regions, wherein the bandgap wavelength of the modulation region (01) is shorter than the bandgap wavelength of the laser gain region (03), and the bandgap wavelengths of the at least two sub-modulator regions are different; The front grating region (02), laser gain region (03), and rear grating region (04) constitute a wide tunable laser for emitting lasers with wide tunable wavelengths. The at least two sub-modulator regions are used to selectively switch or share the at least two sub-modulator regions to modulate the intensity of the laser according to the lasing wavelength of the laser.

2. The integrated device according to claim 1, characterized in that, The bandgap wavelength of the modulation region (01) is 30-100 nm shorter than the bandgap wavelength of the laser gain region (03).

3. The integrated device according to claim 1, characterized in that, The modulation region (01) includes a first sub-modulator region (05) and a second sub-modulator region (06); the bandgap wavelength of the first sub-modulator region (05) is 30-50 nm shorter than the bandgap wavelength of the laser gain region (03); the bandgap wavelength of the second sub-modulator region (06) is 50-100 nm shorter than the bandgap wavelength of the laser gain region (03).

4. The integrated device according to claim 1, characterized in that, The bandgap wavelength of the front grating region (02) is 90-200 nm shorter than the bandgap wavelength of the laser gain region (03); the bandgap wavelength of the rear grating region (04) is 90-200 nm shorter than the bandgap wavelength of the laser gain region.

5. The integrated device according to claim 1, characterized in that, The modulation region (01) and laser gain region (03) are made of InGaAsP or InGaAlAs quantum well material; the front grating region (02) and rear grating region (04) are made of InGaAsP or InGaAlAs bulk material.

6. The integrated device according to claim 1, characterized in that, The modulation region (01) and laser gain region (03) have the following structures from the substrate (10) upwards: lower waveguide layer, active layer, and upper waveguide layer.

7. The integrated device according to claim 1, characterized in that, The integrated device also includes: Cladding (21) is formed on the modulation region (01), the front grating region (02), the laser gain region (03), and the rear grating region (04); An electrical contact layer (22) is formed on the cladding layer (21); P electrode (24) is formed on the electrical contact layer (22); An N electrode (25) is formed on the bottom of the substrate (10).

8. The integrated device according to claim 7, characterized in that, The cladding (21) and the electrical contact layer (22) have an electrical isolation trench (23) between the at least two sub-modulator regions, the front grating region (02), the laser gain region (03), and the rear grating region (04).

9. A method for fabricating an integrated device according to any one of claims 1 to 8, characterized in that, include: A first lower waveguide layer (11), a first active layer (12), and a first upper waveguide layer (13) are sequentially stacked and grown on a substrate (10); A first SiO2 strip structure (14) is fabricated on the first upper waveguide layer (13) of the laser gain region (03); The first lower waveguide layer (11), the first active layer (12), and the first upper waveguide layer (13) covered by the first SiO2 strip structure (14) are etched away. The second lower waveguide layer, the second active layer, and the second upper waveguide layer of the at least two sub-modulator regions are respectively grown on the substrate (10) of the modulation region (01); Remove the first SiO2 strip structure (14); A second SiO2 strip structure (18) is fabricated on the upper waveguide layer of the at least two sub-modulator regions and the first upper waveguide layer (13) of the laser gain region (03); The first lower waveguide layer (11), the first active layer (12), the first upper waveguide layer (13), the lower waveguide layer, the active layer, and the upper waveguide layer of the at least two sub-modulator regions, excluding those covered by the second SiO2 strip structure (18), are etched away. A grating layer (19) is grown on the substrate (10) on the front grating region (02) and the rear grating region (04); The grating (20) is fabricated in the grating layer (19).

10. The preparation method according to claim 9, characterized in that, The preparation method further includes: A cladding (21) is prepared on the first upper waveguide layer (13), the upper waveguide layer of the at least two sub-modulator regions, and the grating layer (19); An electrical contact layer (22) is prepared on the cladding; The cladding (21) and electrical contact layer (22) are fabricated into an inverted shallow ridge waveguide structure; The electrical contact layer (22) is etched at the boundary line of the at least two sub-modulator regions, the front grating region (02), the laser gain region (03), and the rear grating region (04) to obtain an isolation trench, with the etching depth reaching the bottom of the cladding layer (21). He ion implantation was performed on the isolation trench to obtain an electrically isolated trench (23); A P electrode (24) is fabricated on the electrical contact layer (22); Thin the bottom of the substrate (10) and prepare an N electrode (25) on the bottom of the substrate (10).

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