An equivalent circuit model of a drift step recovery diode

Abstract

The application provides an equivalent circuit model of a drift step recovery diode, and belongs to the technical field of semiconductor devices. The topological structure of the equivalent circuit model comprises a parasitic resistance, a parasitic inductance, a diode D, a voltage-controlled switch, a diffusion capacitance, a barrier capacitance, a parasitic capacitance and a voltage control port. The diode D is characterized by a maximum reverse DC voltage, a breakdown voltage, a transit time and a gradient coefficient to represent a multi-layer P-N structure of the drift step recovery diode, and the barrier capacitance, the diffusion capacitance, the voltage-controlled switch and the voltage control port are used to represent the capacitance characteristics of the drift step recovery diode in a switching process, and various parasitic parameters of the drift step recovery diode are also considered, so that the model can more accurately reflect the dynamic electrical characteristics of the drift step recovery diode, and the convenience and accuracy of the design of a drift step recovery diode pulse source are greatly improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device technology, and more specifically to an equivalent circuit model of a drift step recovery diode. Background Technology

[0002] The drift step recovery diode (DSRD) is a novel high-power semiconductor device widely used in high-power electromagnetic pulse applications due to its advantages such as fast turn-off speed, high repetition rate, good stability, and long lifespan. In the pulse circuit design phase, an accurate equivalent circuit model of the drift step recovery diode is crucial for successful circuit design. The DSRD is derived from P... + -PNN + The fast current-breaking device based on the drift step recovery effect, composed of junctions, differs from ordinary diodes mainly in that its intrinsic doping level is extremely low, which is also the key to its drift recovery mechanism. DSRD stores charge through a short forward pulse, and the device quickly turns off after the pump current reverses, undergoing an ultra-short reverse recovery process, generating a nanosecond-level pulse voltage on the load.

[0003] Existing equivalent circuit models for DSRDs typically use multiple 1N4007 rectifier diodes connected in series to represent the multilayer PN structure of the DSRD, and only one capacitor to represent all the voltage-capacitance effects of the DSRD. This equivalent circuit model has significant drawbacks; it directly uses 1N4007 rectifier diodes to represent the multilayer PN structure of the DSRD, ignoring the physical characteristics of the DSRD during operation. Therefore, this equivalent circuit model cannot accurately describe the dynamic electrical characteristics of the DSRD and is unsuitable as a direct circuit equivalent model for DSRDs.

[0004] Based on this, the applicant considers designing a novel equivalent circuit model for the drift step recovery diode to more accurately describe its dynamic electrical characteristics, thereby contributing to the design and research of pulse sources for the drift step recovery diode. Summary of the Invention

[0005] The purpose of this invention is to address the shortcomings of existing equivalent circuit models for drift step recovery diodes by proposing an equivalent circuit model that accurately describes the dynamic electrical characteristics of drift step recovery diodes. This solves the systematic error problem caused by the inability of the equivalent circuit model of drift step recovery diodes to accurately describe their dynamic electrical characteristics during pulse circuit design, and greatly improves the convenience and accuracy of pulse source design for drift step recovery diodes.

[0006] To achieve the above objectives, the present invention provides an equivalent circuit model of a drift step recovery diode, wherein the topology of the equivalent circuit model includes a parasitic resistance R.s , parasitic inductance L s , diode D, voltage-controlled switch S, diffusion capacitor C d , barrier capacitor C j , parasitic capacitor C p and voltage control port N;

[0007] the two ends of the parasitic resistance R s are respectively marked as the first end and the second end of the parasitic resistance R s , the two ends of the diffusion capacitor C d are respectively marked as the first end and the second end of the diffusion capacitor C d , the second end of the parasitic resistance R s is connected in series with the parasitic inductance L s , the anode of the diode D, one end of the voltage-controlled switch S is connected to the cathode of the diode D, and the other end is connected to the first end of the diffusion capacitor C d , one end of the barrier capacitor C j is connected to the second end of the diffusion capacitor C d , and the other end is connected to the cathode of the diode D, one end of the parasitic capacitor C p is connected to the second end of the diffusion capacitor C d , and the other end is connected to the first end of the parasitic resistance R s ; the anode of the voltage control port N is connected to the cathode of the diode D, and the cathode of the voltage control port N is connected to the second end of the diffusion capacitor C d .

[0008] the first end of the parasitic resistance R s constitutes the anode of the equivalent circuit model of the drift step recovery diode, and the second end of the diffusion capacitor C d constitutes the cathode of the equivalent circuit model of the drift step recovery diode.

[0009] Preferably, the maximum reverse DC voltage V D-max , the breakdown voltage V D , the transit time T D and the gradient coefficient M D of the diode D are determined according to the following formulas respectively:

[0010] V D-max = V H-min

[0011] V D = V H

[0012] T D = T H

[0013] M D = 0.44

[0014] wherein V H-min is the minimum reverse pulse voltage of the DSRD, V H is the breakdown voltage of the DSRD, T H is the transit time of the DSRD.

[0015] Preferably, the barrier capacitance C j , the diffusion capacitance C d , the voltage-controlled switch S and the voltage control port N represent the capacitance characteristics of the DSRD in the switching process.

[0016] Compared with the prior art, the present application has the following advantages:

[0017] 1. The present application uses the diode D after extracting the key parameters of the DSRD to represent the multi-layer P-N structure of the DSRD, and uses the barrier capacitance C j , the diffusion capacitance C d , the voltage-controlled switch S and the voltage control port N to represent the capacitance characteristics of the DSRD in the switching process, and also considers various parasitic parameters of the DSRD, which can accurately describe the dynamic electrical characteristics of the DSRD, greatly improving the convenience and accuracy of the design of the DSRD pulse source.

[0018] The key parameters of the DSRD are collectively referred to as the minimum reverse pulse voltage V H-min of the DSRD, the breakdown voltage V H of the DSRD, the transit time T H of the DSRD and the gradient coefficient M D of the diode D. The various parasitic parameters include the parasitic resistance R s , the parasitic inductance L s and the parasitic capacitance C p . BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is the topological graph of the equivalent circuit model in the present application;

[0020] Figure 2 is the topological graph of the equivalent circuit model in the present application when the voltage-controlled switch S is closed;

[0021] Figure 3 is the topological graph of the equivalent circuit model in the present application when the voltage-controlled switch S is open. DETAILED DESCRIPTION

[0022] The present application will be explained in detail below with reference to the accompanying drawings.

[0023] Figure 1is a topological graph of the equivalent circuit model in the application. As can be seen from the graph, the application provides an equivalent circuit model of a drift step recovery diode, and the topological structure of the equivalent circuit model comprises a parasitic resistance R s , a parasitic inductance L s , a diode D, a voltage-controlled switch S, a diffusion capacitor C d , a barrier capacitor C j , a parasitic capacitor C p , and a voltage control port N.

[0024] The two ends of the parasitic resistance R s are respectively marked as the first end and the second end of the parasitic resistance R s , the two ends of the diffusion capacitor C d are respectively marked as the first end and the second end of the diffusion capacitor C d , the second end of the parasitic resistance R s is connected in series with the parasitic inductance L s , and then connected to the anode of the diode D, one end of the voltage-controlled switch S is connected to the cathode of the diode D, and the other end is connected to the first end of the diffusion capacitor C d , one end of the barrier capacitor C j is connected to the second end of the diffusion capacitor C d , and the other end is connected to the cathode of the diode D, one end of the parasitic capacitor C p is connected to the second end of the diffusion capacitor C d , and the other end is connected to the first end of the parasitic resistance R s ; the anode of the voltage control port N is connected to the cathode of the diode D, and the cathode of the voltage control port N is connected to the second end of the diffusion capacitor C d .

[0025] The first end of the parasitic resistance R s constitutes the anode of the equivalent circuit model of the drift step recovery diode, and the second end of the diffusion capacitor C d constitutes the cathode of the equivalent circuit model of the drift step recovery diode.

[0026] In the embodiment, the maximum reverse DC voltage V D-max , the breakdown voltage V D , the transit time T D , and the gradient coefficient M D of the diode D are determined according to the following formulas respectively:

[0027] V D-max = V H-min

[0028] V D = V H

[0029] T D = TH

[0030] M D = 0.44

[0031] wherein V H-min is the minimum reverse pulse voltage of the drift step recovery diode, V H is the breakdown voltage of the drift step recovery diode, T H is the transit time of the drift step recovery diode.

[0032] In the embodiment, the barrier capacitance C j , the diffusion capacitance C d , the voltage-controlled switch S and the voltage control port N represent the capacitance characteristics of the drift step recovery diode in the switching process.

[0033] Figure 2 is the topological graph of the equivalent circuit model of the present application when the voltage-controlled switch S is closed. Initially, the voltage across the voltage control port N is greater than 0, the voltage-controlled switch S is closed, at this time, the barrier capacitance C j and the diffusion capacitance C d are connected in parallel and are connected in series with the diode D, the drift step recovery diode is in the on state, the driving current charges the diffusion capacitance C d , simulating the capacitance effect generated by the PN junction charge pumping process in the drift step recovery diode.

[0034] Figure 3 is the topological graph of the equivalent circuit model of the present application when the voltage-controlled switch S is opened. When the driving extraction current pulls back all the PN junction charges, the voltage on the diffusion capacitance C d returns to 0, the voltage across the voltage control port N is equal to 0, the voltage-controlled switch S is turned off, at this time, the diffusion capacitance C d is disconnected, the diode D is directly connected in series with the barrier capacitance C j , so that the drift step recovery diode automatically enters the off state.

Claims

1. An equivalent circuit model of a drift step recovery diode, characterized by, The topology of the equivalent circuit model comprises a parasitic resistance R s , a parasitic inductance L s , a diode D, a voltage-controlled switch S, a diffusion capacitance C d , a barrier capacitance C j , a parasitic capacitance C p and a voltage control port N; The two ends of the parasitic resistance R s are respectively marked as the first end and the second end of the parasitic resistance R s , the two ends of the diffusion capacitor C d are respectively marked as the first end and the second end of the diffusion capacitor C d , the second end of the parasitic resistance R s is connected in series with the parasitic inductance L s , and then connected to the anode of a diode D, one end of a voltage-controlled switch S is connected to the cathode of the diode D, and the other end is connected to the first end of the diffusion capacitor C d , one end of the barrier capacitor C j is connected to the second end of the diffusion capacitor C d , and the other end is connected to the cathode of the diode D, one end of the parasitic capacitor C p is connected to the second end of the diffusion capacitor C d , and the other end is connected to the first end of the parasitic resistance R s ; the anode of the voltage control port N is connected to the cathode of the diode D, and the cathode of the voltage control port N is connected to the second end of the diffusion capacitor C d . The parasitic resistance R s The first end of the diffusion capacitance C d The second end of the diffusion capacitance C 2. An equivalent circuit model of a drift step recovery diode according to claim 1, characterized in that, the maximum reverse DC voltage V of the diode D D-max , the breakdown voltage V D , the transit time T D and the gradient coefficient M D are determined according to the following equations, respectively: V D-max = V H-min V D = V H T D = T H M D ＝0.44 where V H-min is the minimum reverse pulse voltage of the drift step recovery diode, V H is the breakdown voltage of the drift step recovery diode, T H is the transit time of the drift step recovery diode.

3. An equivalent circuit model of a drift step recovery diode according to claim 1, characterized in that, The barrier capacitance Cj, diffusion capacitance Cd, voltage-controlled switch S and voltage control port N represent the capacitance characteristics of the drift step recovery diode in the switching process. The barrier capacitance Cj, diffusion capacitance Cd, voltage-controlled switch S and voltage control port N represent the capacitance characteristics of the drift step recovery diode in the switching process.

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