A doorless ion transfer tube of transverse stack structure

Abstract

The application discloses a doorless ion migration tube with a transverse stacking structure, which comprises a first shielding electrode plate and a second shielding electrode plate oppositely arranged in a vertical direction, and a plurality of migration electrode plates arranged between the first shielding electrode plate and the second shielding electrode plate; and electrode strips are arranged on the upper surface and the lower surface of the migration electrode plates. The application reduces the overall number of stacking units and the assembly difficulty; the structure of eliminating the physical ion door not only simplifies the assembly difficulty of the migration tube, but also adjusts the migration distance without changing the overall structure of the migration tube, realizes the function of adaptively changing the migration distance according to the application scene, and has higher full-spectrum resolution.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of ion mobility spectrometry in analytical instruments, and in particular to a gateless ion mobility tube with a lateral stack structure. BACKGROUND

[0002] Ion mobility spectrometry (IMS) is an important technique for the analysis of substances under normal atmospheric conditions, which mainly utilizes the migration characteristics of gas-phase ions of different substances in an electric field to separate and analyze the substances. In order to generate a uniform migration electric field, ion mobility tubes usually adopt a longitudinal stack "sandwich" structure to arrange annular electrodes (migration rings) at equal intervals to form a tubular structure, the stacking direction is consistent with the ion transmission direction, and through the gradient decreasing potential applied on the migration rings, the hollow area in the center of the circular ring forms a sample ion migration channel with a uniform electric field, such as CN201110422560.2, 201410853488.2 and 201010225133.0.

[0003] Although the manufacture and processing of each migration ring is not difficult, this longitudinal stack "sandwich" structure needs to position and fix hundreds of migration rings in a specific order by using bolts or sleeves, which consumes a large amount of assembly cost; especially noteworthy is that this longitudinal stack "sandwich" structure has a large ion migration channel, and the instrument must use an ion gate structure to control the ion groups to enter the migration tube in a specific time sequence, and the processing and assembly process of the ion gate are very complex, usually a metal wire with a diameter of 0.05-0.1mm is wound on the migration ring at an interval of 0.5-1mm, or a laser or chemical etching method is used to etch a dense small hole on a metal sheet with a thickness of 0.05mm, and then the ion gate structure needs to be assembled between the longitudinally stacked migration rings under the condition of ensuring the flatness of the ion gate metal mesh, which increases the processing and manufacturing difficulty of the ion mobility tube and improves the assembly and use cost.

[0004] In addition, once the existing ion mobility tube is assembled, the migration distance of the sample ions cannot be changed: the migration rate of different sample ions in the ion mobility tube is different, which leads to the need for different migration distances when the ion mobility spectrometry is applied to different scenes, for example, when detecting large-molecule organic substances, a relatively long migration distance is usually needed to improve the detection sensitivity due to the slow migration rate; when detecting small-molecule harmful substances, a relatively short migration distance is needed. However, the current ion mobility tube design scheme cannot change the migration distance once it is assembled, so it cannot achieve the optimal effect in different detection scenarios. SUMMARY

[0005] In view of this, the application provides a doorless ion migration tube with a transverse stacking structure, which omits the ion door structure, simplifies the implementation process of the migration tube, reduces the overall number of stacked units, and reduces the assembly difficulty.

[0006] The application discloses a doorless ion migration tube with a transverse stacking structure, which comprises a first shielding electrode plate and a second shielding electrode plate oppositely arranged in a vertical direction, and a plurality of migration electrode plates arranged between the first shielding electrode plate and the second shielding electrode plate.

[0007] Further, the application further comprises a fixing device oppositely arranged, which is perpendicular to the first shielding electrode plate and the second shielding electrode plate.

[0008] Further, the migration electrode plate comprises an insulating flat plate and migration electrode strips arranged on the upper surface and the lower surface of the insulating flat plate.

[0009] The migration electrode strips on the upper surface of the insulating flat plate correspond to the migration electrode strips on the lower surface in the function of providing electric potential; and the migration electrode strips are parallel to the insulating flat plate.

[0010] Further, the migration electrode plates form cavities for ion transmission; and the number of the cavities is greater than 1.

[0011] Further, the migration electrode strips in the cavities can form a potential difference in the vertical direction, for controlling the transmission of ions in the cavities.

[0012] Further, the migration electrode strips in the cavities can form a potential difference in the horizontal direction, for controlling the transmission of ions in the cavities.

[0013] Further, the migration electrode strips are all conductive materials, for providing electric potential for the cavities.

[0014] Further, the upper surface of the first shielding electrode plate and the lower surface of the second shielding electrode plate are respectively provided with shielding electrode strips, which can prevent external interference potential from affecting the electric potential in the cavities.

[0015] Further, the lower surface of the first shielding electrode plate and the upper surface of the second shielding electrode plate can be provided with migration electrode strips corresponding to the migration electrode strips on the upper surface or the lower surface of the migration electrode plate in the function of providing electric potential, or the shielding electrode strips.

[0016] Due to the adoption of the above technical solutions, the application has the following advantages:

[0017] The present application reduces the overall assembly difficulty of the ion migration tube, reduces the overall number of stacked units, especially eliminates the ion gate structure in the migration tube, not only can reduce the processing cost and assembly difficulty, but also the doorless design can dynamically change the ion migration distance through the circuit control method after the assembly is completed, and realize the adaptive adjustment of the mobility in different detection scenes. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art according to these drawings.

[0019] Figure 1 is a whole structure schematic diagram of a doorless ion migration tube with a transverse stacking structure of the present application embodiment;

[0020] Figure 2 is a migration electrode plate structure schematic diagram of the present application embodiment;

[0021] Figure 3 is an ion transmission area schematic diagram of the present application embodiment and Figure 1 is a side view of the present application embodiment;

[0022] Figure 4 is a first shielding electrode plate structure schematic diagram of the present application embodiment.

[0023] Reference signs:

[0024] 1-first shielding electrode plate, 2-second shielding electrode plate, 3-migration electrode plate, 4-fixing device, 5-vertical direction, 6-ion transmission direction, 8-migration electrode strip, 9-insulating flat plate, 10-ion transmission area, 11-shielding side electrode strip. DETAILED DESCRIPTION

[0025] The present application is further illustrated by combining the drawings and embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. All other embodiments obtained by those skilled in the art should belong to the scope of protection of the embodiments of the present application.

[0026] Reference Figure 1The application provides an embodiment of a doorless ion migration tube with a transverse stacking structure, which comprises a first shielding electrode plate 1 and a second shielding electrode plate 2 oppositely arranged along a vertical direction 5, and a plurality of migration electrode plates 3 arranged between the first shielding electrode plate 1 and the second shielding electrode plate 2; and electrode strips are arranged on the upper surface and the lower surface of the migration electrode plates 3.

[0027] In the embodiment, the fixing device 4 oppositely arranged is perpendicular to the first shielding electrode plate 1 and the second shielding electrode plate 2.

[0028] In the embodiment, the migration electrode plate 3 comprises an insulating flat plate 9 and migration electrode strips 8 arranged on the upper surface and the lower surface of the insulating flat plate 9.

[0029] The migration electrode strips 8 on the upper surface of the insulating flat plate 9 correspond to the migration electrode strips 8 on the lower surface in the function of providing electric potential; and the migration electrode strips 8 are parallel to the insulating flat plate 9.

[0030] The migration electrode plate in the embodiment of the application is a thin insulating flat plate, rectangular migration electrode strips parallel to each other are arranged on the two sides of the flat plate in sequence, the migration electrode strips are metal conductors, an electric potential can be independently applied to each metal conductor, and the structure of each migration electrode plate is the same. Figure 2 As shown in the figure, a uniform electric field along the ion transmission direction 6 can be formed between each two migration electrode plates by applying a gradient-decreasing electric potential on the electrode strips.

[0031] In the embodiment, cavities for ion transmission are formed between the migration electrode plates 3; and the number of the cavities is greater than 1. The cavities constitute an ion transmission region 10.

[0032] The stacking in the embodiment of the application means that the stacking units are sequentially stacked together in sequence, and a certain fixed gap exists between the stacking units; the outer edges of each stacked migration electrode plate are aligned, and an ion group can pass through between the stacked migration electrode plates. All the spaces between each two migration electrode plates jointly constitute an ion transmission region, since the upper, lower, left and right sides of the migration tube are all disturbed by the electric potential generated by the outside, the actual ion transmission region is only the middle part, and the ion transmission region 10 is shown in the figure. Figure 3

[0033] In the embodiment, the migration electrode strips 8 in the cavities can form a potential difference along the vertical direction 5, for controlling the transmission of ions in the cavities.

[0034] In the embodiment, the migration electrode strips 8 in the cavities can form a potential difference along the horizontal direction, for controlling the transmission of ions in the cavities.

[0035] In the embodiment, the migration electrode strips 8 are all conductive materials, for providing the cavities with electric potential. ​

[0036] The upper surface of the first shielding electrode plate 1 and the lower surface of the second shielding electrode plate 2 are respectively provided with electrode strips for shielding, which can prevent external interference potential from affecting the potential in the cavity. Figure 4

[0037] In this embodiment, the lower surface of the first shielding electrode plate 1 and the upper surface of the second shielding electrode plate 2 can be provided with migration electrode strips 8 corresponding to the migration electrode strips 8 on the upper surface or the lower surface of the migration electrode plate 3 in terms of the function of providing potential, or provided with electrode strips for shielding.

[0038] The ion migration tube described in the present application can control the transmission of ions by changing the potential applied by the migration electrode strips on the migration electrode plate. By applying a gradient-decreasing potential on the electrode strips on the upper and lower surfaces of the migration electrode plate, a uniform electric field along the ion transmission direction can be formed between every two migration electrode plates, and the ions will be transmitted at a uniform speed. When a certain specific migration electrode strip position is selected, the function of the ion gate structure can be realized by only increasing the potential applied by the migration electrode strips on one side and decreasing the potential applied by the migration electrode strips on the other side. The control effect of the simulated ion gate on the ion group can be adjusted by controlling the spacing distance between the migration electrode plates. By changing the selected specific migration electrode strip position, the position of the simulated ion gate can be adjusted.

[0039] Compared with the traditional processing method of the ion migration tube in the form of a "sandwich" stacked longitudinally, the present application proposes a gateless ion migration tube using a "lasagna" structure stacked laterally to generate a uniform electric field layer, which reduces the overall number of stacked units and the assembly difficulty. On this structure, the function of the ion gate in the traditional ion migration tube can be realized by adjusting the potential application mode of the migration electrode strips on the migration electrode plate, a gateless migration tube manufacturing method is provided, the ion gate structure is omitted, and the implementation process of the migration tube is simplified. Since the specific position of the ion gate can be controlled by the potential applied on the migration electrode, the present application can realize adaptive adjustment of the migration distance in different detection scenarios.

[0040] For ease of understanding, a more specific embodiment of the present application is given as follows:

[0041] A gateless ion migration tube in a laterally stacked structure is shown in Figure 1 The overall structure is formed by laterally stacking a first shielding electrode plate 1, a second shielding electrode plate 2 and seven migration electrode plates 3, and the overall length is 150 mm, the width is 80 mm, and the height is 90 mm. The spacing between each plate is 10 mm.

[0042] ​The first shielding electrode plate 1 and the second shielding electrode plate 2 are made of a PCB processing technology, the bottom plate is made of FR4 material, the length is 150mm, the width is 80mm, and the thickness is 0.5mm, copper is plated on the upper and lower surfaces in a copper cladding manner, the length of each shielding side electrode strip 11 arranged on the outer side is 8.5mm, the width is 80mm, and the height is 0.1mm, and a total of fifteen shielding side electrode strips are evenly arranged; the length of each migration electrode strip 8 arranged on the inner side is 1mm, the width is 80mm, and the height is 0.1mm, and a total of eight migration electrode strips are evenly arranged.

[0043] The migration electrode plate 3 is made of a PCB processing technology, the bottom plate is made of FR4 material, the length is 150mm, the width is 80mm, and the thickness is 0.5mm, copper is plated on the upper and lower surfaces in a copper cladding manner, the length of each migration electrode strip 8 arranged on the inner and outer sides is 1mm, the width is 80mm, and the height is 0.1mm, and a total of eight migration electrode strips are evenly arranged.

[0044] The fixing device 4 on the left and right sides of the migration tube is sealed and fixed by using Teflon material.

[0045] In a normal state, the shielding side electrode strips 11 are from back to front, and the potential between each electrode strip is 467V from 0 potential; the migration electrode strips 8 are from back to front, and the potential between each electrode strip is 1000V from 0 potential, and a cloud strong electric field with an electric field strength of 47V / mm can be formed in the middle of the migration tube.

[0046] By applying a potential higher than the original potential by 200V on the fourth migration electrode on the upper side of all the migration electrode plates 3 and applying a potential lower than the original potential by 200V on the fourth migration electrode on the lower side of all the migration electrode plates 3, the closing function of the ion gate can be realized, and the ions reaching the fourth migration electrode position will be consumed on the lower electrode strip of the fourth migration electrode of the migration electrode plate 3; by restoring all the electrodes to the normal state, the ions reaching the fourth migration electrode position can pass through, realizing the opening function of the ion gate.

[0047] By changing the fourth migration electrode of all the migration electrode plates 3 to the sixth migration electrode, the migration distance between the ion gate and the detector is shortened, and the migration distance adjustment function is realized.

[0048] Finally, it should be noted that: the above examples are only used to illustrate the technical solutions of the present application, but not to limit them, although the present application has been described in detail with reference to the above examples, those skilled in the art should understand that the specific embodiments of the present application can be modified or replaced by equivalents without departing from the spirit and scope of the present application, any modification or equivalent replacement without departing from the spirit and scope of the present application should be covered in the protection scope of the claims of the present application.

Claims

1. A doorless ion transfer tube of a transverse stack structure, characterized by, The application relates to a mass analyzer, which comprises a first shielding electrode plate and a second shielding electrode plate arranged oppositely in a vertical direction, and a fixing device arranged oppositely, a plurality of layers of migration electrode plates are arranged between the first shielding electrode plate and the second shielding electrode plate; electrode strips are arranged on the upper surface and the lower surface of the migration electrode plates; the fixing device is perpendicular to the first shielding electrode plate and the second shielding electrode plate; the vertical direction refers to a direction parallel to the plane where the fixing device is located. The migration electrode plate comprises an insulating flat plate and migration electrode strips arranged on the upper surface and the lower surface of the insulating flat plate; the migration electrode strips on the upper surface of the insulating flat plate correspond to the migration electrode strips on the lower surface in the function of providing electric potential; the migration electrode strips are parallel to the insulating flat plate; cavities for ion transmission are formed between the migration electrode plates; the number of the cavities is greater than 1; the migration electrode strips in the cavities can form a potential difference in the vertical direction, so as to control the transmission of ions in the cavities; the migration electrode strips in the cavities can form a potential difference in the horizontal direction, so as to control the transmission of ions in the cavities. When a certain migration electrode strip position is selected, the function of the ion gate structure can be realized by only increasing the electric potential applied to one side of the migration electrode strip and reducing the electric potential applied to the other side of the migration electrode strip; the control effect of the simulation ion gate on the ion group is adjusted by controlling the interval distance between the migration electrode plates; the position of the simulation ion gate is adjusted by changing the selected certain migration electrode strip position; the migration distance between the ion gate and the detector is shortened; and the migration distance adjustment function is realized.

2. The doorless ion transfer tube of transversely stacked structure according to claim 1, characterized in that, The migration electrode strips are all made of conductive materials, which are used for providing electric potential for the cavities.

3. The doorless ion transfer tube of transverse stacked structure of claim 1, wherein, The upper surface of the first shielding electrode plate and the lower surface of the second shielding electrode plate are respectively provided with electrode strips for shielding, which can prevent external interference potential from affecting the electric potential in the cavities.

4. The doorless ion transfer tube of transversely stacked structure according to claim 3, characterized in that, The lower surface of the first shielding electrode plate and the upper surface of the second shielding electrode plate are respectively provided with migration electrode strips corresponding to the migration electrode strips on the upper surface or the lower surface of the migration electrode plate in the function of providing electric potential, or the electrode strips for shielding.

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