Method for compensating performance degradation of hybrid gate structure device
CN116153968BActive Publication Date: 2026-07-07SHANGHAI TECH UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI TECH UNIV
- Filing Date
- 2023-02-23
- Publication Date
- 2026-07-07
AI Technical Summary
Technical Problem
In the prior art, applying a suitable back gate voltage to improve device lifespan can lead to the front gate losing its turn-off capability, resulting in increased leakage current.
Method used
The system employs a hybrid gate structure π-GAA-π, which includes a central GAA gate and two π gates on either side. The GAA gate fully encloses the channel, while the π gates are partially exposed. This allows the back gate to compensate for current when it is on and isolate the back gate from its influence when it is off.
Benefits of technology
It effectively compensates for device performance degradation, suppresses leakage current rise and gate control capability deterioration, while maintaining stable device turn-off performance.
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Smart Images
Figure CN116153968B_ABST
Abstract
The application discloses a performance degradation compensation method based on a hybrid gate structure device. The hybrid gate structure device comprises, from bottom to top, a bottom silicon substrate, an intermediate buried oxygen layer with a cavity, a channel layer on the upper surface of the buried oxygen layer, wherein the two sides of the channel are a drain and a source, a pi-GAA-pi hybrid gate structure on the channel layer, which is composed of a middle GAA gate and two side pi gates, the GAA gate fills the cavity in the buried oxygen layer through a deposition process to achieve a full-wrapped state of the channel, and the two sides of the GAA gate are a complete buried oxygen layer and a non-full-wrapped pi gate. The pi-GAA-pi hybrid gate structure provided by the application can provide good back gate adjustable characteristics when the device is turned on, and can block the negative effects of the back gate when the device is turned off, thereby overcoming the adverse factors such as deterioration of the off-state characteristics caused by the back gate of the traditional device.
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