Preparation method of molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction and product thereof

Abstract

The application discloses a preparation method of a molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction and a product thereof, and the preparation method comprises the following steps: (1) taking molybdenum trioxide, ground alkali metal chloride and sulfur powder as raw materials, and growing molybdenum sulfide on the surface of a substrate by a CVD method; the particle size of the ground alkali metal chloride is 80-130 microns; the mass ratio of the molybdenum trioxide to the alkali metal chloride is 4-5:1; (2) placing the substrate on which the molybdenum sulfide is grown in step (1) in a reactor, taking NH3 as a reaction gas, taking an inert gas as a carrier gas, and preparing the molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction by performing a nitriding reaction at 700-725 DEG C for 1-90 min and then rapidly dropping to room temperature. The preparation method is simple and controllable, and successfully realizes regular partial nitriding; the molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction prepared has clear boundaries between molybdenum sulfide phases and molybdenum nitride phases and adjustable contents of the two phases.

Description

Technical Field

[0001] This invention relates to the technical field of two-dimensional MXene, and more particularly to a method for preparing a two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride and its product. Background Technology

[0002] Two-dimensional (2D) materials have garnered significant attention in optoelectronic devices, catalysis, and solar energy conversion due to their high specific surface area, abundant exposed atoms, and excellent mechanical, optical, and electronic properties. Benefiting from their layered structure, 2D materials are readily used to construct heterojunction structures. 2D heterojunction structures typically include vertical heterojunctions and planar heterojunctions. In vertical heterojunctions, layers of different 2D materials are stacked vertically, making them relatively easy to fabricate. In planar heterojunctions, different 2D materials are seamlessly connected within the same plane. Most reported 2D heterojunction structures are vertical heterojunctions. In vertical heterojunctions, the built-in electric field at the heterojunction interface originates from the van der Waals forces between the layers. In planar heterojunctions, the built-in electric field at the heterojunction interface originates from the chemical bonds between the two materials. As is well known, van der Waals forces are weaker than chemical bonds. Therefore, planar heterojunctions are superior to vertical heterojunctions in driving the separation and migration of photogenerated charges. However, due to the strict limitations of lattice matching and the difficulty in selecting suitable material compositions, the construction of planar heterojunction structures is currently limited to a few types.

[0003] As a type of transition metal dichalcogenide (TMDC), monolayer molybdenum disulfide is a direct bandgap semiconductor material with a bandgap energy in the visible light band and excellent quantum luminescence efficiency, broadening its applications in novel electronic and optoelectronic devices. However, its applications are limited by its single bandgap energy, limited light absorption efficiency, and optoelectronic properties constrained by the conductivity of the material itself. Research indicates that molybdenum disulfide can be composited with other materials (such as tungsten diselenide and graphene) to construct two-dimensional heterojunction materials, potentially yielding even better electrical, optical, and mechanical properties.

[0004] As a type of MXene material, transition metal nitrides have been extensively studied due to their excellent catalytic activity, mechanical strength, and electrical conductivity. Among them, molybdenum nitride (MoN) exhibits noble metal-like catalytic performance due to the expansion of interatomic gaps and an increase in Fermi level density caused by the incorporation of nitrogen atoms, leading to changes in its electronic structure. MoN materials also possess the property of coexisting three types of chemical bonds (metallic, covalent, and ionic), resulting in noble metal-like catalytic properties. δ-MoN, in particular, has attracted widespread attention due to its catalytic performance, energy storage capacity, and superconductivity similar to platinum group metals. However, molybdenum-based MXenes, especially molybdenum nitride (MoN), are particularly noteworthy. xBecause there are very few stable MAX precursors predicted by theory, it is difficult to obtain them by selective etching of bulk MAX phase precursors. Therefore, their heterojunction structures are even more difficult to obtain, which to some extent limits their research and application. Summary of the Invention

[0005] To address the aforementioned problems in the existing technology, this invention discloses a method for preparing a two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride. This method is simple and controllable, and successfully achieves regular partial nitridation. The boundary between the molybdenum sulfide phase and the molybdenum nitride phase in the prepared molybdenum sulfide / molybdenum nitride in-plane heterojunction is clear and the contents of both can be adjusted. The two-dimensional in-plane heterojunction has a stable structure, and its surface shows no significant changes after being stored in an oven at 60°C under atmospheric conditions for 30 days.

[0006] The specific technical solution is as follows:

[0007] A method for preparing a two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride includes the following steps:

[0008] (1) Using molybdenum trioxide, ground alkali metal chloride, and sulfur powder as raw materials, molybdenum sulfide is grown on the substrate surface by CVD method;

[0009] The particle size of the ground alkali metal chloride is 80–130 μm;

[0010] The mass ratio of molybdenum trioxide to alkali metal chloride is 4–5:1;

[0011] (2) The substrate on which molybdenum sulfide was grown in step (1) was placed in a reactor, with NH3 as the reaction gas and an inert gas as the carrier gas. After nitriding at 700-725°C for 1-90 min, the temperature was suddenly reduced to room temperature to prepare the molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction.

[0012] The preparation method disclosed in this invention first uses the traditional CVD method to prepare single-crystal molybdenum sulfide, and then uses ammonia as the reaction gas to achieve the preparation of MoS2 / δ-MoN in-plane heterojunction through a simple topological transformation. In this preparation method, it is necessary to control the mass ratio of molybdenum trioxide to alkali metal chloride and the particle size of alkali metal chloride in step (1), as well as the temperature and time of the nitriding reaction in step (2).

[0013] Experiments revealed that in step (1), if alkali metal chlorides are added directly without grinding, obvious alkali metal chloride grains will appear on the surface of the prepared molybdenum sulfide, resulting in insufficient mixing of NaCl and MoO3, slow growth of molybdenum sulfide, and easy absorption of moisture by the sample. If it is ground but the amount added is too large, obvious dendritic structures will form on the surface of the prepared molybdenum sulfide, which will also cause the surface of molybdenum sulfide to easily absorb moisture, thereby reducing the quality of the sample.

[0014] In step (1):

[0015] The alkali metal chloride is selected from sodium chloride and / or potassium chloride.

[0016] Preferably, the particle size of the ground alkali metal chloride is 80–130 μm.

[0017] Preferably, the mass ratio of molybdenum trioxide to alkali metal chloride is 4-5:1.

[0018] Preferably, the mass ratio of molybdenum trioxide to sulfur powder is 1:50-75. Experiments have shown that if too much sulfur powder is added, the prepared molybdenum sulfide will have a multilayer structure, making it impossible to prepare a single-layer MoS2 / δ-MoN in-plane heterojunction.

[0019] Preferably, the CVD deposition temperature is 725–800℃ and the time is 3–5 min.

[0020] Preferably, the CVD deposition is performed under an inert atmosphere, which is selected from argon and / or nitrogen.

[0021] In step (1), the substrate is selected from silicon wafers, sapphire, mica or silicon nitride.

[0022] In step (2):

[0023] The inert gas is selected from argon and / or nitrogen;

[0024] Preferably, the volume ratio of NH3 to inert gas is 6-10:100, and the flow rate of inert gas is 100-300 sccm; at this flow rate, ammonia can ensure that the nitriding reaction proceeds smoothly and stably.

[0025] Preferably, the nitriding reaction is carried out at 700℃ for 15–80 min. Experiments showed that when the nitriding reaction temperature is 700℃, the MoS2 / δ-MoN in-plane heterojunction obtained has a clear boundary between MoS2 and MoN, and the content of both can be controlled by adjusting the nitriding reaction time, indicating that the nitriding reaction can occur controllably at this temperature. When the reaction temperature is increased to 725℃, although the obtained structure is still a MoS2 / δ-MoN in-plane heterojunction, the boundary between the two is significantly irregular. This indicates that when the nitriding temperature rises to 725℃, a more irregular nitriding trend begins to emerge.

[0026] Further experiments revealed that increasing the nitriding temperature to 750℃ resulted in products containing both MoS2 and MoN phases, but without any discernible pattern, indicating that the nitriding reaction was difficult to control at this temperature. Further increasing the reaction temperature or extending the reaction time at 750℃ resulted in the complete transformation of the product into MoN.

[0027] This invention has special requirements for the cooling treatment after the nitriding reaction. Experiments have shown that the product must be suddenly cooled to room temperature after the reaction to ensure that the target product is obtained. If the product is left in the reactor and the cooling method is adopted to slowly cool down the reactor to room temperature, obvious hole structures will appear on the surface.

[0028] The present invention also discloses a two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride prepared according to the above method, wherein a single heterojunction is triangular, with molybdenum sulfide at the edge and molybdenum nitride in the middle.

[0029] Preferably, each heterojunction is a regular equilateral triangle with a side length of 20–200 μm and a thickness of 1–5 nm. The side length and thickness of the single heterojunction can be controlled by the deposition temperature and deposition time of CVD deposition in step (1). As the deposition temperature increases and the deposition time increases, the side length and thickness of the prepared single heterojunction are larger.

[0030] Preferably, the molybdenum nitride content in the molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction prepared by the present invention is 11-82 wt%. This content can be controlled by the nitriding reaction time in step (2), and the molybdenum nitride content increases with the increase of nitriding time.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] This invention discloses a method for preparing a two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride. Single-crystal molybdenum sulfide is prepared using the traditional CVD method, and then ammonia is used as the reaction gas. A simple topological transformation is employed to achieve the preparation of the MoS2 / δ-MoN in-plane heterojunction. This method is simple and controllable, successfully achieving regular partial nitridation, and provides a good approach for exploring novel TMDC / TMNs. The boundary between the molybdenum sulfide and molybdenum nitride phases in the two-dimensional in-plane heterojunction prepared by this invention is clear, and their contents are adjustable. The two-dimensional in-plane heterojunction structure is stable, and its surface shows no significant changes after being stored in an oven at 60°C under atmospheric conditions for 30 days. Attached Figure Description

[0033] Figure 1 An optical microscope (OM) image of molybdenum sulfide, the intermediate product prepared in Example 1.

[0034] Figure 2 OM photograph of the product prepared in Example 1;

[0035] Figure 3 The Raman spectrum of the product prepared in Example 1;

[0036] Figure 4The photoelectron spectroscopy (XPS) spectrum of the product prepared in Example 1;

[0037] Figure 5 OM image of molybdenum sulfide prepared in Comparative Example 1;

[0038] Figure 6 OM image of molybdenum sulfide prepared in Comparative Example 2;

[0039] Figure 7 OM photograph of the product prepared in Example 3;

[0040] Figure 8 OM image of the product prepared in Example 4;

[0041] Figure 9 OM image of the product prepared in Example 5;

[0042] Figure 10 OM image of the product prepared in Comparative Example 3;

[0043] Figure 11 OM image of the product prepared for Comparative Example 4;

[0044] Figure 12 Raman image of the product prepared in Comparative Example 4;

[0045] Figure 13 XPS image of the product prepared in Comparative Example 4;

[0046] Figure 14 OM image of the product prepared in Comparative Example 5;

[0047] Figure 15 OM image of the product prepared for Comparative Example 6. Detailed Implementation

[0048] The present invention will be described in further detail below with reference to embodiments and comparative examples, but the implementation of the present invention is not limited thereto.

[0049] Example 1

[0050] Raw material pretreatment: Commercially available NaCl was ground in a mortar for 1 minute to obtain a particle size of 80-130 μm, and then set aside for use; the silicon wafers were cut and ultrasonically cleaned in sequence with deionized water, isopropanol, and acetone for 15 minutes, and then stored in isopropanol.

[0051] Preparation of molybdenum sulfide: Weigh 2 mg of molybdenum trioxide (MoO3) and 0.5 mg of NaCl (ground), mix them evenly, and spread them evenly on a quartz boat. Place the cut silicon wafer on top of the mixed powder and then place it in the center of a tube furnace. Weigh 100 mg of S and place it at the front heating zone of the tube furnace. Under a carrier gas atmosphere of 120 sccm argon (Ar), heat the furnace from room temperature to 750°C at a heating rate of 25°C / min, hold for 3 min, and then cool the furnace to below 500°C before rapid cooling.

[0052] Figure 1 An optical microscope image of the molybdenum sulfide prepared for this embodiment.

[0053] Preparation of molybdenum sulfide / molybdenum nitride heterojunction: Molybdenum sulfide grown by CVD was placed in a tube furnace and heated to 700℃ at a heating rate of 25℃ / min. At this time, a mixed gas consisting of 200 sccm of argon and 15 sccm of NH3 was introduced, and the sample was sent to the center of the tube furnace using a push-pull rod. After holding at this temperature for 45 min, the ammonia gas was turned off, and the sample was pulled out from the high-temperature zone of the furnace and rapidly cooled to room temperature to obtain the molybdenum sulfide / molybdenum nitride heterojunction.

[0054] Figure 2 An optical microscope image of the product prepared in this embodiment shows that the product is a regular equilateral triangle with a side length of approximately 30 μm; in conjunction with... Figure 3 Raman spectra at different locations of the product confirm that the dark gray edge represents molybdenum sulfide, while the light-colored center represents molybdenum nitride, with clear boundaries, proving that the present invention has successfully prepared a two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride.

[0055] After conversion, the molybdenum nitride content in the two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride prepared in this embodiment is 35 wt%.

[0056] pass Figure 4 XPS testing of the product prepared in this embodiment showed the presence of S element in the S spectrum, and the spectral positions of N 1s and Mo3d were consistent with those in the literature, proving the simultaneous presence of Mo-N bonds and Mo-S bonds, thus further demonstrating the successful preparation of the MoS2-MoN in-plane heterostructure.

[0057] The molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction prepared in this embodiment was placed in an oven at 60°C and stored under atmospheric conditions for 30 days. No obvious changes were observed on its surface, indicating that the molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction prepared by this method has a stable structure.

[0058] Comparative Example 1

[0059] The preparation of molybdenum sulfide was basically the same as in Example 1, except that NaCl was not ground. Tests showed that the particle size of unground commercially available NaCl was 300-500 μm.

[0060] Figure 5 The OM image of the molybdenum sulfide prepared in this comparative example shows that there are obvious NaCl grains on the surface of the molybdenum sulfide. Excessively large NaCl grains will remain on the substrate surface and are difficult to remove, thus affecting the cleanliness of the MoS2 surface and thus being unfavorable for the high-quality synthesis of in-plane heterojunctions.

[0061] Comparative Example 2

[0062] The preparation of molybdenum sulfide was basically the same as in Example 1, except that the mass of the added ground NaCl was replaced with 2 mg.

[0063] Figure 6 The OM image of the molybdenum sulfide prepared in this comparative example shows that a distinct dendritic structure forms on the surface of the molybdenum sulfide, and MoS2 is extremely hygroscopic, which may be due to the addition of too much NaCl, thus making it impossible to further nitride it to prepare an in-plane heterojunction.

[0064] Example 2

[0065] The raw material pretreatment is the same as in Example 1.

[0066] Preparation of molybdenum sulfide: Weigh 2 mg of molybdenum trioxide (MoO3) and 0.4 mg of NaCl (ground), mix them evenly, and spread them evenly on a quartz boat. Place the cut silicon wafer on top of the mixed powder and then place it in the center of a tube furnace. Weigh 150 mg of S and place it at the front heating zone of the tube furnace. Under a carrier gas atmosphere of 120 sccm argon (Ar), heat the furnace from room temperature to 750°C at a heating rate of 25°C / min, hold for 3 min, and then cool the furnace to below 500°C before rapid cooling.

[0067] Preparation of molybdenum sulfide / molybdenum nitride heterojunction: Molybdenum sulfide grown by CVD was placed in a tube furnace and heated to 700℃ at a heating rate of 25℃ / min. At this time, a mixed gas consisting of 200 sccm of argon and 20 sccm of NH3 was introduced, and the sample was sent to the center of the tube furnace using a push-pull rod. After holding at this temperature for 15 min, the ammonia gas was turned off, and the sample was pulled out from the high-temperature zone of the furnace and rapidly cooled to room temperature to obtain the molybdenum sulfide / molybdenum nitride heterojunction.

[0068] Observing the OM diagram of the molybdenum sulfide / molybdenum nitride heterojunction prepared in this embodiment, it can be found that there is a clear boundary between MoS2 and MoN.

[0069] After conversion, the molybdenum nitride content in the two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride prepared in this embodiment is 11 wt%.

[0070] Example 3

[0071] The raw material pretreatment is the same as in Example 1.

[0072] Preparation of molybdenum sulfide: Weigh 2 mg of molybdenum trioxide (MoO3) and 0.4 mg of NaCl (ground), mix them evenly, and spread them evenly on a quartz boat. Place the cut silicon wafer on top of the mixed powder and then place it in the center of a tube furnace. Weigh 100 mg of S and place it at the front heating zone of the tube furnace. Under the carrier gas atmosphere of 120 sccm argon (Ar), heat the furnace from room temperature to 800°C at a heating rate of 25°C / min, hold at that temperature for 3 min, and then allow it to cool naturally to below 500°C before opening the furnace.

[0073] Preparation of molybdenum sulfide / molybdenum nitride heterojunction: Molybdenum sulfide grown by CVD was placed in a tube furnace and heated to 700℃ at a heating rate of 25℃ / min. At this time, a mixed gas consisting of 200 sccm of argon and 12 sccm of NH3 was introduced, and the sample was sent to the center of the tube furnace using a push-pull rod. After holding at this temperature for 60 min, the ammonia gas was turned off, and the sample was pulled out from the high-temperature zone of the furnace and rapidly cooled to room temperature to obtain the molybdenum sulfide / molybdenum nitride heterojunction.

[0074] Figure 7 The image shown is an optical microscope image of the molybdenum sulfide / molybdenum nitride heterojunction prepared in this embodiment. Observation reveals a clear boundary between molybdenum sulfide and molybdenum nitride.

[0075] After conversion, the molybdenum nitride content in the two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride prepared in this embodiment is 62 wt%.

[0076] Example 4

[0077] The raw material pretreatment is the same as in Example 1.

[0078] Preparation of molybdenum sulfide: Weigh 2 mg of molybdenum trioxide (MoO3) and 0.4 mg of NaCl (ground), mix them evenly, and spread them evenly on a quartz boat. Place the cut silicon wafer on top of the mixed powder and then place it in the center of a tube furnace. Weigh 100 mg of S and place it at the front heating zone of the tube furnace. Under the carrier gas atmosphere of 120 sccm argon (Ar), heat the furnace from room temperature to 800°C at a heating rate of 25°C / min, hold at that temperature for 3 min, and then allow it to cool naturally to below 500°C before opening the furnace.

[0079] Preparation of molybdenum sulfide / molybdenum nitride heterojunction: Molybdenum sulfide grown by CVD was placed in a tube furnace and heated to 700℃ at a heating rate of 25℃ / min. At this time, a mixed gas consisting of 200 sccm of argon and 12 sccm of NH3 was introduced, and the sample was sent to the center of the tube furnace using a push-pull rod. After holding at this temperature for 80 min, the ammonia gas was turned off, and the sample was pulled out of the tube furnace and rapidly cooled to room temperature to obtain the molybdenum sulfide / molybdenum nitride heterojunction.

[0080] Figure 8 The image shows an optical microscope image of the molybdenum sulfide / molybdenum nitride heterojunction prepared in this embodiment. It can be observed that the molybdenum nitride content is higher than that of molybdenum sulfide.

[0081] After conversion, the molybdenum nitride content in the two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride prepared in this embodiment is 82 wt%.

[0082] Example 5

[0083] The preparation process is basically the same as in Example 1, except that the temperature in the preparation of the molybdenum sulfide / molybdenum nitride heterojunction is replaced from 700℃ to 725℃.

[0084] Figure 9 The OM image of the molybdenum sulfide / molybdenum nitride heterojunction prepared in this embodiment shows that the product still presents a regular equilateral triangle with a side length of approximately 30 μm. The dark gray edges clearly indicate molybdenum sulfide, while the lighter-colored center represents molybdenum nitride, although the boundaries are noticeably irregular. This suggests that a more irregular nitriding trend emerges when the nitriding temperature is increased to 725 °C.

[0085] The Raman spectroscopy and XPS test results were similar to those in Example 1.

[0086] Comparative Example 3

[0087] The preparation process is basically the same as in Example 1, except that the temperature in the preparation of the molybdenum sulfide / molybdenum nitride heterojunction is replaced from 700℃ to 750℃, and the holding time is replaced from 45min to 25min.

[0088] Figure 10 The OM image of the product prepared in this comparative example shows that the light and dark colors in the prepared nanosheets are irregular and have no clear boundaries, indicating that the nitriding process becomes difficult to control when the temperature is increased to 750℃.

[0089] Comparative Example 4

[0090] The preparation process is basically the same as in Example 1, except that the temperature in the preparation of the molybdenum sulfide / molybdenum nitride heterojunction is replaced from 700℃ to 750℃, and the holding time is replaced from 45min to 35min.

[0091] Figure 11 The OM image of the product prepared in this comparative example shows that the entire nanosheet exhibits a uniform color, as confirmed by Raman spectroscopy. Figure 12 The XPS results also showed that the characteristic peaks of molybdenum sulfide had completely disappeared, indicating that molybdenum sulfide was completely nitrided to form molybdenum nitride, without forming an in-plane heterojunction structure of molybdenum sulfide / molybdenum nitride. Figure 13The signal peak of S has completely disappeared.

[0092] Comparative Example 5

[0093] The preparation process is basically the same as in Example 1, except that the temperature in the preparation of the molybdenum sulfide / molybdenum nitride heterojunction is replaced from 700℃ to 675℃, and the holding time is replaced from 45min to 60min.

[0094] Raman testing showed that the sharpness of the characteristic peaks of molybdenum sulfide was reduced, and Raman imaging characterization showed that the surface contrast was uniform, indicating that it is a single-phase MoS2 material. Figure 14 The image shows an OM photograph of the product prepared in this comparative example. The photograph also shows that no nitriding reaction occurred.

[0095] Comparative Example 6

[0096] The preparation process is basically the same as in Example 1, except that in the preparation of the molybdenum sulfide / molybdenum nitride heterojunction, after holding at a temperature for 45 minutes, the ammonia gas is turned off and the heating is turned off, allowing the sample to cool to room temperature in the tube furnace.

[0097] Figure 15 The OM photograph of the product prepared in this comparative example shows that holes are formed on the surface of the product.

Claims

1. A two-dimensional in-plane heterojunction of molybdenum sulfide / molybdenum nitride, characterized in that, A single heterojunction is triangular, with molybdenum sulfide at the edges and molybdenum nitride in the center; The preparation method of the molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction includes the following steps: (1) Using molybdenum trioxide, ground alkali metal chloride, and sulfur powder as raw materials, molybdenum sulfide is grown on the substrate surface by CVD method; The particle size of the ground alkali metal chloride is 80~130 μm; The mass ratio of molybdenum trioxide to alkali metal chloride is 4~5:1; The mass ratio of molybdenum trioxide to sulfur powder is 1:50~75; (2) The substrate on which molybdenum sulfide was grown in step (1) was placed in a reactor, NH3 was used as the reaction gas and an inert gas was used as the carrier gas, and the substrate was nitrided at 700~725℃ for 1~90 min and then rapidly cooled to room temperature to prepare the molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction.

2. The molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction according to claim 1, characterized in that, In step (1): The alkali metal chloride is selected from sodium chloride and / or potassium chloride.

3. The molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction according to claim 1, characterized in that, In step (1): The CVD deposition temperature is 735~800℃.

4. The molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction according to claim 1, characterized in that, In step (1), the substrate is selected from silicon wafers, sapphire, mica or silicon nitride.

5. The molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction according to claim 1, characterized in that, In step (2): The inert gas is selected from argon and / or nitrogen; The volume ratio of NH3 to inert gas is 6~10:

100.

6. The molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction according to claim 1, characterized in that, In step (2), the reaction is carried out at 700 °C for 15~80 min.

7. The molybdenum sulfide / molybdenum nitride two-dimensional in-plane heterojunction according to claim 1, characterized in that, In the molybdenum sulfide / molybdenum nitride in-plane heterojunction, the molybdenum nitride content is 11~82 wt%.

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