A multi-wavelength laser beam combining device

Abstract

The application discloses a kind of multi-wavelength laser beam combination devices, comprising: wavelength beam combination element and five semiconductor lasers, the wavelength beam combination element includes first surface, second surface, third surface and fourth surface;λ1 wavelength laser of first semiconductor laser and λ2 wavelength laser of second semiconductor laser are combined in the first surface, combined λ1, λ2 wavelength laser and λ3 wavelength laser of third semiconductor laser are combined in the second surface, combined λ1, λ2, λ3 wavelength laser and λ4 wavelength laser of fourth semiconductor laser are combined in the third surface, combined λ1, λ2, λ3, λ4 wavelength laser and λ5 wavelength laser of fifth semiconductor laser are combined in the fourth surface.The application uses one wavelength beam combination element to realize the wavelength beam combination of five different wavelength lasers, greatly simplifies multi-wavelength beam combination system, improves the output power and laser brightness of semiconductor laser, and expands application range.

Description

Technical Field

[0001] This invention relates to the field of laser beam combining technology, and more specifically to a multi-wavelength laser beam combining device. Background Technology

[0002] Semiconductor lasers have advantages such as compact structure, high efficiency, low cost, and high reliability, and are widely used. However, semiconductor lasers are limited by chip manufacturing processes, and the output power of a single unit is relatively low. As people's demand for high-power, high-brightness lasers continues to grow, laser beam combining technology has emerged.

[0003] Common laser beam combining techniques include coherent and incoherent beam combining. Incoherent beam combining includes spatial beam combining, polarization beam combining, wavelength beam combining, and spectral beam combining. Wavelength beam combining is a relatively simple and high-yield method. It typically involves combining lasers of different wavelengths with a wavelength interval of approximately 25 nm using a wavelength combining mirror. The combined power is approximately the sum of the powers of all participating light-emitting units. Wavelength beam combining usually combines two to three wavelengths of laser light. For beam combining more wavelengths, the system becomes more complex. Therefore, simplifying the structure of multi-wavelength beam combining systems and improving their feasibility and effectiveness is crucial for obtaining high-power, high-brightness laser beam combining devices. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a multi-wavelength laser beam combining device.

[0005] This invention discloses a multi-wavelength laser beam combining device, comprising: a wavelength beam combining element and five semiconductor lasers, wherein the wavelength beam combining element includes a first surface, a second surface, a third surface and a fourth surface;

[0006] The λ1 wavelength laser from the first semiconductor laser and the λ2 wavelength laser from the second semiconductor laser are combined on the first surface. The combined λ1 and λ2 wavelength lasers are combined with the λ3 wavelength laser from the third semiconductor laser on the second surface. The combined λ1, λ2, and λ3 wavelength lasers are combined with the λ4 wavelength laser from the fourth semiconductor laser on the third surface. The combined λ1, λ2, λ3, and λ4 wavelength lasers are combined with the λ5 wavelength laser from the fifth semiconductor laser on the fourth surface.

[0007] As a further improvement of the present invention, the first surface and the second surface are arranged in parallel, and the third surface and the fourth surface are arranged in parallel; the first surface and the fourth surface are arranged perpendicularly, and the second surface and the third surface are arranged perpendicularly.

[0008] As a further improvement of the present invention, the transmission-side laser and the reflection-side laser of the first surface, the second surface, the third surface, or the fourth surface are all incident on the corresponding surface at 45°. The first surface is coated with a film layer that allows the transmission of λ1 wavelength laser and the reflection of λ2 wavelength laser. The second surface is coated with a film layer that allows the transmission of λ3 wavelength laser and the reflection of λ1 and λ2 wavelength lasers. The third surface is coated with a film layer that allows the transmission of λ4 wavelength laser and the reflection of λ1, λ2, and λ3 wavelength lasers. The fourth surface is coated with a film layer that allows the transmission of λ5 wavelength laser and the reflection of λ1, λ2, λ3, and λ4 wavelength lasers.

[0009] As a further improvement of the present invention, it also includes: a fifth surface and a sixth surface;

[0010] The fifth surface connects to one side of the first surface and the second surface, the other side of the first surface connects to one side of the fourth surface, the other side of the second surface connects to one side of the third surface, and the sixth surface connects to the other side of the third surface and the fourth surface.

[0011] As a further improvement of the present invention, the λ2 wavelength laser is first incident perpendicularly onto the fifth surface, and then onto the first surface. The full-band laser beam after being combined by the fourth surface is emitted from the sixth surface. The fifth surface is coated with a film layer that allows the λ2 wavelength laser to be fully transparent, and the sixth surface is coated with a full-band anti-reflection film.

[0012] As a further improvement of the present invention, each of the semiconductor lasers is provided with a fast-axis collimating mirror and a slow-axis collimating mirror in sequence along the laser emission direction.

[0013] As a further improvement of the present invention, the distance from the fast-axis collimating lens to the light-emitting surface of the semiconductor laser is equal to the focal length of the fast-axis collimating lens, and the surface of the fast-axis collimating lens is coated with an anti-reflection film with a transmittance > 99%; the distance from the slow-axis collimating lens to the light-emitting surface of the semiconductor laser is equal to the focal length of the slow-axis collimating lens, and the surface of the slow-axis collimating lens is coated with an anti-reflection film with a transmittance > 99%.

[0014] As a further improvement of the present invention, a reflector is also provided on the optical axis of the emitted laser of the fifth semiconductor laser. The reflector is disposed on the light-emitting side of the slow-axis collimating mirror. The reflector is placed at 45° and its surface is coated with a total reflection film for λ5 wavelength laser.

[0015] As a further improvement of the present invention, the wavelength of the semiconductor laser is in the visible light or near-infrared range, and the five semiconductor lasers have different laser wavelengths.

[0016] As a further improvement of the present invention, the semiconductor laser is a single tube, a bar, or a packaged light source module.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0018] This invention uses semiconductor lasers of different wavelengths as wavelength combining light sources and uses a single wavelength combining element to combine five different wavelength lasers, which greatly simplifies the multi-wavelength combining system, improves the output power and laser brightness of the semiconductor laser, and expands the application range; it is of great significance for obtaining high-power, high-brightness laser combining devices. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of the multi-wavelength laser beam combining device disclosed in this invention;

[0020] Figure 2 for Figure 1 Schematic diagram of a medium-wavelength beam combiner;

[0021] Figure 3 This is a schematic diagram of the beam combining device for the multi-wavelength laser beam combining device disclosed in this invention.

[0022] In the picture:

[0023] 1. Semiconductor laser; 2. Fast-axis collimating lens; 3. Slow-axis collimating lens; 4. Wavelength beam combiner; 401. First surface; 402. Second surface; 403. Third surface; 404. Fourth surface; 405. Fifth surface; 406. Sixth surface; 5. Mirror. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] The present invention will now be described in further detail with reference to the accompanying drawings:

[0026] This invention provides a multi-wavelength laser beam combining device, comprising: a wavelength beam combining element and multiple semiconductor lasers. The multiple semiconductor lasers are arranged at different positions and emit lasers of different wavelengths. The lasers of different wavelengths are collimated by the fast and slow axes and then incident on the wavelength beam combining element. The wavelength beam combining element selectively reflects or transmits the lasers of different wavelengths to perform wavelength beam combining and achieve common aperture laser output.

[0027] Specifically:

[0028] like Figure 1 ,3 As shown, the present invention provides a multi-wavelength laser beam combining device, comprising: five semiconductor lasers 1, a fast-axis collimating lens 2, a slow-axis collimating lens 3, a wavelength beam combining element 4, and a reflector 5; wherein,

[0029] The wavelength combining element 4 includes a first surface 401, a second surface 402, a third surface 403, a fourth surface 404, a fifth surface 405, and a sixth surface 406, and the structure of the wavelength combining element 4 is as follows. Figure 2 As shown; that is, the first surface 401 and the second surface 402 are arranged parallel to each other, and the third surface 403 and the fourth surface 404 are arranged parallel to each other; the first surface 401 and the fourth surface 404 are arranged perpendicular to each other, and the second surface 402 and the third surface 403 are arranged perpendicular to each other; the fifth surface 405 connects one side of the first surface 401 and the second surface 402, the other side of the first surface 401 is connected to one side of the fourth surface 404, the other side of the second surface 402 is connected to one side of the third surface 403, and the sixth surface 406 connects the other side of the third surface 403 and the fourth surface 404; the transmission side laser and the reflection side laser of the first surface 401, the second surface 402, the third surface 403 and the fourth surface 404 are all incident on the corresponding surfaces at a 45° angle. The first to fourth semiconductor lasers are provided with a fast-axis collimating lens 2 and a slow-axis collimating lens 3 on their emitting sides, respectively. The fifth semiconductor laser is provided with a fast-axis collimating lens 2, a slow-axis collimating lens 3, and a reflector 5 on its emitting side. The distance from the fast-axis collimating lens 2 to the corresponding emitting surface of the semiconductor laser is equal to the focal length of the fast-axis collimating lens 2. The surface of the fast-axis collimating lens 2 is coated with an anti-reflection coating with a transmittance of >99% for the laser in that wavelength band. The distance from the slow-axis collimating lens 3 to the corresponding emitting surface of the semiconductor laser is equal to the focal length of the slow-axis collimating lens 3. The surface of the slow-axis collimating lens 3 is coated with an anti-reflection coating with a transmittance of >99% for the laser in that wavelength band. The reflector 5 is placed at 45° and its surface is coated with a total reflection coating for λ5 wavelength laser.

[0030] Furthermore, the wavelength of semiconductor laser 1 is in the visible or near-infrared range, and the laser wavelengths of the five semiconductor lasers are different; the semiconductor lasers can be single tubes, bars, stacks, or other packaged light source modules.

[0031] Specifically:

[0032] The λ1 wavelength laser from the first semiconductor laser is collimated by the fast-axis collimating lens 2 and the slow-axis collimating lens 3 in sequence and then incident on the first surface 401 from the transmission side. The λ2 wavelength laser from the second semiconductor laser is collimated by the fast-axis collimating lens 2 and the slow-axis collimating lens 3 in sequence and then incident perpendicularly on the fifth surface 405, and then incident on the first surface 401 from the reflection side. The λ1 wavelength laser and the λ2 wavelength laser are perpendicular to each other and are combined on the first surface 401. The combined beam is incident on the second surface 402 from the reflection side.

[0033] The λ3 wavelength laser of the third semiconductor laser is collimated by the fast axis collimating lens 2 and the slow axis collimating lens 3 in sequence and then enters the second surface 402 from the transmission side. The λ1 and λ2 wavelength lasers after beam combining are perpendicular to the λ3 wavelength laser and are combined on the second surface 402. The combined beam enters the third surface 403 from the reflection side.

[0034] The λ4 wavelength laser of the fourth semiconductor laser is collimated by the fast axis collimating lens 2 and the slow axis collimating lens 3 in sequence and then incident from the transmission side onto the third surface 403. The combined λ1, λ2, and λ3 wavelength lasers are perpendicular to the λ4 wavelength laser and are combined on the third surface 403. The combined beam is incident from the reflection side onto the fourth surface 404.

[0035] The λ5 wavelength laser from the fifth semiconductor laser is collimated sequentially by the fast-axis collimating mirror 2 and the slow-axis collimating mirror 3, and reflected by the reflecting mirror 5 before entering the fourth surface 404 from the transmission side. The combined λ1, λ2, λ3, and λ4 wavelength lasers are perpendicular to the λ5 wavelength laser and are combined on the fourth surface 404. The combined full-band laser is emitted perpendicularly from the sixth surface 406.

[0036] in,

[0037] The first surface 401 of this invention is coated with a film layer that allows the transmission of λ1 wavelength laser and the reflection of λ2 wavelength laser; the second surface 402 is coated with a film layer that allows the transmission of λ3 wavelength laser and the reflection of λ1 and λ2 wavelength lasers; the third surface 403 is coated with a film layer that allows the transmission of λ4 wavelength laser and the reflection of λ1, λ2, and λ3 wavelength lasers; the fourth surface 404 is coated with a film layer that allows the transmission of λ5 wavelength laser and the reflection of λ1, λ2, λ3, and λ4 wavelength lasers; the fifth surface 405 is coated with a film layer that allows full transmission of λ2 wavelength laser; and the sixth surface 406 is coated with a full-band antireflection film. Furthermore, the reflection or transmission effect of different film layers for different wavelengths is 100%.

[0038] The advantages of this invention are:

[0039] This invention uses semiconductor lasers of different wavelengths as wavelength combining light sources and uses a single wavelength combining element to combine five different wavelength lasers, which greatly simplifies the multi-wavelength combining system, improves the output power and laser brightness of the semiconductor laser, and expands the application range; it is of great significance for obtaining high-power, high-brightness laser combining devices.

[0040] The above are merely preferred embodiments of the present invention and are not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A multi-wavelength laser beam combining device, characterized in that, include: A wavelength beam combiner and five semiconductor lasers, the wavelength beam combiner including a first surface, a second surface, a third surface, a fourth surface, a fifth surface and a sixth surface; The wavelength laser of the first semiconductor laser and the wavelength laser of the second semiconductor laser are combined on the first surface. The combined wavelength laser is combined with the wavelength laser of the third semiconductor laser on the second surface. The combined wavelength laser is combined with the wavelength laser of the fourth semiconductor laser on the third surface. The combined wavelength laser is combined with the wavelength laser of the fifth semiconductor laser on the fourth surface. The first surface is parallel to the second surface, and the third surface is parallel to the fourth surface; the first surface is perpendicular to the fourth surface, and the second surface is perpendicular to the third surface; the fifth surface connects one side of the first surface and the second surface, the other side of the first surface is connected to one side of the fourth surface, the other side of the second surface is connected to one side of the third surface, and the sixth surface connects the other side of the third surface and the fourth surface.

2. The multi-wavelength laser beam combining device as described in claim 1, characterized in that, The transmission-side laser and the reflection-side laser of the first surface, the second surface, the third surface, or the fourth surface are all incident on the corresponding surface at 45°. The first surface is coated with a film layer that allows wavelength laser transmission and wavelength laser reflection. The second surface is coated with a film layer that allows wavelength laser transmission and wavelength laser reflection. The third surface is coated with a film layer that allows wavelength laser transmission and wavelength laser reflection. The fourth surface is coated with a film layer that allows wavelength laser transmission and wavelength laser reflection.

3. The multi-wavelength laser beam combining device as described in claim 1, characterized in that, A wavelength laser is first incident perpendicularly onto the fifth surface, and then onto the first surface. The full-band laser beam, after being combined by the fourth surface, is emitted from the sixth surface. The fifth surface is coated with a film layer that allows the full transmission of the wavelength laser, and the sixth surface is coated with a full-band anti-reflection film.

4. The multi-wavelength laser beam combining device according to any one of claims 1 to 3, characterized in that, Each of the semiconductor lasers is provided with a fast-axis collimating lens and a slow-axis collimating lens in sequence along the laser emission direction.

5. The multi-wavelength laser beam combining device as described in claim 4, characterized in that, The distance from the fast-axis collimating lens to the light-emitting surface of the semiconductor laser is equal to the focal length of the fast-axis collimating lens, and the surface of the fast-axis collimating lens is coated with an anti-reflection film with a transmittance of >99%; the distance from the slow-axis collimating lens to the light-emitting surface of the semiconductor laser is equal to the focal length of the slow-axis collimating lens, and the surface of the slow-axis collimating lens is coated with an anti-reflection film with a transmittance of >99%.

6. The multi-wavelength laser beam combining device as described in claim 4, characterized in that, The fifth semiconductor laser also has a reflector on the optical axis of the emitted laser. The reflector is located on the light-emitting side of the slow-axis collimating mirror. The reflector is placed at 45° and its surface is coated with a total reflection film for the wavelength laser.

7. The multi-wavelength laser beam combining device according to any one of claims 1 to 3, characterized in that, The semiconductor lasers have wavelengths in the visible or near-infrared range, and the five semiconductor lasers have different laser wavelengths.

8. The multi-wavelength laser beam combining device as described in any one of claims 1 to 3, characterized in that, The semiconductor laser is a single tube, a bar, or a packaged light source module.

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