A spin locker based on ultrafast magneto-optical dynamics, construction method and system
By doping Co atoms into γ-graphyne to construct a Co4&γ-Graphyne structure, and utilizing laser-induced spin dynamics, an ultrafast magneto-optical dynamic design for a spin latch was achieved. This solved the glitch sensitivity and logic resource consumption problems of traditional latches, and realized a highly efficient and stable spin latch function.
Patent Information
- Application Number
- CN202310115565.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-02-14
- Publication Date
- 2025-12-23
- Estimated Expiration
- 2043-02-14
AI Technical Summary
Existing traditional latches are sensitive to glitches, leading to circuit instability and consuming more logic resources in programmable gate arrays.
A spin latch based on ultrafast magneto-optical dynamics was adopted. A Co4 & γ-Graphyne structure was constructed by doping four Co atoms in γ-graphyne. The structure was optimized and the spin density was calculated. The localized position and direction of the spin density were defined. A three-bit logic gate was constructed using laser-induced spin dynamics to realize the function of the spin latch.
A high-speed sub-picosecond spin latch design was achieved, avoiding glitches, consuming fewer logic units, with faster transmission time and higher accuracy, thus solving the instability problem of traditional latches.
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Figure CN116167451B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of spin dynamics, and particularly relates to a spin latch based on ultrafast magneto-optical dynamics, a construction method and a system. BACKGROUND
[0002] In the past few decades, the digital technology industry has developed rapidly, and semiconductor latches have rapidly developed towards miniaturization, large-scale integration and low energy consumption, and the magnitude has reached the nanometer level. At this scale, Moore's law is gradually approaching the physical limit. To solve the development dilemma of devices, various new electronic components are widely studied, and spin latches are considered to be promising candidates for the next generation of latches due to their low power consumption, high performance and non-volatility.
[0003] A latch is a storage unit circuit device sensitive to pulse levels, which can change state under the action of a specific input pulse level. The structure of the RS latch is the most basic latch structure, and various modifications and extensions are generally made in practical applications. The RS latch is usually formed by cross-coupling or end-to-end connection of the input and output terminals of two NAND gates or NOR gates. Thus, the output information holding, setting 1 and setting 0 functions are realized. However, the existing traditional latch has the following disadvantages: (1) the traditional latch is sensitive to glitches, which can cause instability of the circuit; (2) the design of the traditional latch consumes more logic resources in a programmable logic gate array (FPGA). SUMMARY
[0004] In order to overcome the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a spin latch based on ultrafast magneto-optical dynamics, a construction method and a system, to solve the problems of the existing traditional latch being sensitive to glitches, causing instability of the circuit, and consuming more logic resources in a programmable logic gate array (FPGA).
[0005] In order to achieve the above-mentioned purpose, the present application adopts the following technical solutions:
[0006] A construction method of a spin latch based on ultrafast magneto-optical dynamics, comprising:
[0007] Doping four Co atoms based on γ-graphyne to construct a Co4&γ-graphyne structure model;
[0008] Performing structure optimization on the Co4&γ-graphyne structure model to obtain a stable configuration;
[0009] Performing calculation on the system ground state and excited state electronic structure of the optimized Co4&γ-graphyne structure model to obtain spin density, and analyzing and judging the spin density localization position and spin direction of the system;
[0010] The logic input variable and the logic output variable of the spin latch are defined according to the spin density localization position and the spin direction judgment result;
[0011] According to the defined logic input variable and the logic output variable, a three-bit logic gate is constructed through a laser-induced spin dynamics process, and a spin latch based on ultrafast magneto-optical dynamics is constructed.
[0012] Preferably, the Co atoms include Co1, Co2, Co3 and Co4, wherein the three atoms of Co1, Co2 and Co3 are located at the upper position of the γ-graphyne plane model, and the Co4 atom is located at the lower position of the γ-graphyne plane model.
[0013] Preferably, the structure optimization of the Co4&gamma-graphyne structure model includes:
[0014] S1: Hartree-Fock equation method is applied to solve the system energy gradient;
[0015] S2: The structure adjustment direction and the step are determined through analysis of the system energy gradient;
[0016] S3: The structure coordinates are adjusted, and the system energy gradient is recalculated;
[0017] S4: The system energy gradient obtained is judged through the potential energy surface, if the system energy reaches the minimum value, the calculation is ended, otherwise the above steps are cycled.
[0018] Preferably, the calculation of the system ground state and the excited state electronic structure of the optimized Co4&gamma-graphyne structure model adopts the symmetry matching cluster-configuration interaction method.
[0019] Preferably, the analysis and judgment of the spin density localization position and the spin direction of the system use the Mulliken population analysis method.
[0020] Preferably, the logic input variable of the spin latch is defined through the spin density localization position and the spin direction; and the logic output variable of the spin latch is defined through the spin direction.
[0021] Preferably, when the spin density is concentrated on the Co1 atom, it is defined as (0, 0), when the spin density is concentrated on the Co2 atom, it is defined as (0, 1), when the spin density is concentrated on the Co3 atom, it is defined as (1, 0), and when the spin density is concentrated on the Co4 atom, it is defined as (1, 1); the spin direction downward is defined as 0, and the spin direction upward is defined as 1.
[0022] The application further discloses a spin latch based on ultrafast magneto-optical dynamics, which is constructed by the construction method of the spin latch based on ultrafast magneto-optical dynamics.
[0023] The application further discloses a construction system of the spin latch based on ultrafast magneto-optical dynamics, which comprises:
[0024] The model construction module is used for constructing a Co4&gamma-Graphyne structure model by doping four Co atoms based on gamma-Graphyne.
[0025] The optimization module is used for obtaining a stable configuration by performing structure optimization on the Co4&gamma-Graphyne structure model.
[0026] The calculation module is used for obtaining spin density by calculating the system ground state and excited state electronic structure of the optimized Co4&gamma-Graphyne structure model, and analyzing and judging the spin density localization position and spin direction of the system.
[0027] The definition module is used for defining logic input variables and logic output variables of the spin latch according to the spin density localization position and spin direction judgment result.
[0028] The spin latch design module is used for constructing a three-bit logic gate by laser-induced spin dynamics process according to the defined logic input variables and logic output variables, and constructing the spin latch based on ultrafast magneto-optical dynamics.
[0029] The application further discloses an electronic device, which comprises a memory, a processor and a computer program stored in the memory and capable of running on the processor, and the processor implements the steps of the construction method of the spin latch based on ultrafast magneto-optical dynamics when the computer program is executed.
[0030] Compared with the prior art, the application has the following beneficial effects:
[0031] The application discloses a construction method of a spin latch based on ultrafast magneto-optical dynamics, four Co atoms are doped based on gamma-graphyne to construct a Co4&gamma-graphyne structure model, and a stable configuration is obtained by optimizing the structure, excitation state characteristics are calculated, and a self-developed post-processing program is used to realize spin dynamics progress according to the obtained electronic structure information. The design function of the spin latch device is realized by defining the logic basic unit of different spin states of the system and combining the spin dynamics progress of the system; the basic function of the RS latch is realized by the angle of spin state control of the Co4&gamma-graphyne system, a spin latch based on the RS latch is successfully designed, the consumed logic unit is less, compared with the traditional latch, the influence of the glitch is avoided, and the entire completion time reaches the ultra-high speed sub-picosecond, and the guarantee degree is above 95%. The application provides a train of thought for the design and application of a new generation of spin latch. BRIEF DESCRIPTION OF DRAWINGS
[0032] Figure 1 A flowchart of the application is shown in the figure;
[0033] Figure 2 A top view of the four magnetic Co atom doped graphyne model constructed by the application is shown in the figure;
[0034] Figure 3 A front view of the four magnetic Co atom doped graphyne model constructed by the application is shown in the figure;
[0035] Figure 4 A laser-induced reversible spin flip process diagram of the structure constructed by the application is shown in the figure.
[0036] Figure 5 A laser-induced reversible spin transfer process diagram of the structure constructed by the application is shown in the figure.
[0037] Figure 6 A laser-induced reversible spin transfer process diagram of the structure constructed by the application is shown in the figure. DETAILED DESCRIPTION
[0038] In order for those skilled in the art to better understand the application scheme, the technical solutions in the embodiments of the application will be clearly and completely described below in combination with the drawings in the embodiments of the application. Obviously, the described embodiments are only a part of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor should belong to the protection scope of the application.
[0039] It should be noted that the terms "first", "second", and the like in the description and in the claims of the present application and the above-described accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular chronological or sequential order. It should be understood that the data thus used can be interchanged under appropriate circumstances so that the embodiments of the application described herein can be implemented in other than the order illustrated or described herein. Furthermore, the terms "comprise" and "have", and any variations thereof, are intended to cover non-exclusive inclusion, for example, processes, methods, systems, products, or devices that include a list of steps or units as processes, methods, systems, products, or devices not necessarily limited to those clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.
[0040] The application will be further described in detail below with reference to the accompanying drawings:
[0041] The application is based on the design of spin latch based on ultrafast magneto-optical dynamics, selects Co4&gamma-Graphyne structure for atomic scale modeling, uses the first principle quantum chemistry calculation software Gaussian program, adopts the restricted open shell Hartree-Fock (ROHF) for structure optimization to obtain a stable configuration, and uses the symmetry matching cluster-configuration interaction (SAC-CI) method for calculating the excited state characteristics. For the obtained electronic structure information, a self-developed post-processing program is used to realize the spin dynamics process. Through the definition of the logic basic unit of different spin states of the system, the design function of the spin latch device is realized by combining the spin dynamics process in the system, so that it can be used for the design and application of a new generation of spin latch.
[0042] The technical scheme adopted by the application to solve its technical problems comprises the following:
[0043] The application selects Co4&gamma-Graphyne structure, realizes spin dynamics process on Co4&gamma-Graphyne structure, and defines logic input and output variables by using spin density localization position and spin direction according to the principle and function of traditional RS latch. Input variable: the input variable is defined according to the spin density localization position and the spin direction, the spin density localization Co1 atom is defined as (0, 0), Co2 is defined as (0, 1), Co3 is defined as (1, 0), and Co4 is defined as (1, 1), in addition, the spin direction is downward defined as 0, and the spin direction is upward defined as 1. Output variable: only defined according to the spin direction, the spin direction is downward defined as 0, and the spin direction is upward defined as 1.
[0044] Through the definition of the input and output, the application can construct a three-bit logic gate through a laser-induced spin dynamics process, realize a logic gate from input (0, 0, 0) to output (0), input (0, 0, 1) to output (1), input (1, 0, 0) to output (1), input (1, 0, 1) to output (1), input (0, 1, 0) to output (0), and input (0, 1, 1) to output (1), and thus realize the function of a traditional latch through a spin dynamics process of a corresponding process controlled by a laser, and further design a spin latch device from the perspective of spin latch.
[0045] According to the basic principle and function of a latch and based on ultrafast magneto-optical dynamics, the application successfully designs a spin latch device unit from the perspective of a spin latch, effectively solves the problem that a traditional latch is sensitive to glitches and causes circuit instability, and has less resource consumption, fast transmission time and high precision.
[0046] The design scheme of the spin latch is realized in six steps, as shown in the following table. Figure 1 The table includes the following steps: model construction, structure optimization process, calculation of spin density, implementation of spin dynamics on a magnetic atom, definition of a basic unit of logic operation, and implementation of the function of a spin latch device.
[0047] Step 1: Model construction
[0048] As shown in the following table, the top view and front view of the Co4&gamma-Graphyne structure constructed by the application are shown. Figure 2 、 Figure 3 The Co4&gamma-Graphyne structure constructed by the application is based on a two-dimensional material gamma-graphyne, four magnetic Co atoms are doped on the model, three atoms Co1, Co2 and Co3 are located above the gamma-graphyne plane model, and the Co4 atom is located below the gamma-graphyne plane model.
[0049] Step 2: Structure optimization process
[0050] The model designed in step 1 is subjected to Hartree-Fock level structure optimization, which includes the following steps:
[0051] (1) The Hartree-Fock equation (Hartree-Fock) method is used to solve the system energy gradient; (2) the structure adjustment direction and step are determined through analysis of the energy gradient, so that the system energy decreases at the fastest speed; (3) adjust the structure coordinates and recalculate the energy gradient; (4) judge the structure energy obtained through the potential energy surface, if the system energy reaches the minimum value, the calculation is ended, otherwise the above steps are cycled;
[0052] Step 3: Calculation of spin density
[0053] For the model optimized in step 2, the symmetry matching cluster configuration interaction (SAC-CI) method is used to calculate the ground state and the excited state electronic structure of the system. The Mulliken population analysis method is used to analyze and judge the spin localization position of the system, which is used to select the initial state and the final state in the spin dynamics process, and provides a basis for the subsequent spin dynamics process.
[0054] Step 4: Implementation of spin dynamics process on magnetic atoms:
[0055] As shown in Figure 4 , the laser-induced reversible spin flip process on Co2 and Co3 atoms is shown. The upper subgraph is the forward path (FW) and the lower subgraph is the corresponding backward path (FW). In each subgraph, the dashed line, the solid line and the dotted line correspond to the initial state, the final state and the intermediate state evolution process. From the calculation results in step 3, 10 triplet states and 1 singlet state are obtained, and the spin density is mainly distributed on the four Co atoms. In the spin dynamics process, spin flip refers to the process in which the spin angular momentum direction is completely changed. In the beginning of the spin flip process, the initial state and the final state are selected, and the spin flip process on Co2 and Co3 atoms is realized. In addition, as another necessary dynamic process in the spin information transmission process, spin transfer refers to the transfer from one magnetic center to another magnetic center. By selecting different initial states and final states, the spin transfer process between different magnetic atoms can be realized, as shown in Figure 5 、 Figure 6 , which shows the spin transfer processes between Co1 and Co4, Co2 and Co3, Co2 and Co4, and Co3 and Co4.
[0056] Step 5: Definition of logical operation basic unit:
[0057] Based on the spin flip and transfer processes realized in step 4, the spin characteristics and control mechanism of the four-magnetic-center structure are realized. The input and output variables are redefined in the present application. The input variable is defined according to the spin density localization position and the spin direction. The spin density is concentrated on Co1 atom, which is defined as (0, 0), on Co2 atom, which is defined as (0, 1), on Co3 atom, which is defined as (1, 0), and on Co4 atom, which is defined as (1, 1). In addition, combined with the spin direction, the spin direction downward is defined as 0, and the spin direction upward is defined as 1. The output variable is defined according to the spin direction. The spin direction downward is defined as 0, and the spin direction upward is defined as 1.
[0058] Step 6: Implementation of spin latch device function:
[0059] Based on the definition of step 5, and the initial state and final state in the spin dynamics process are selected, the spin logic gate control can be realized by using the local spin flip realized on Co1, Co2, Co3, Co4 in the designed Co4&gamma-Graphyne structure and the global spin transfer process. For example, the input variable corresponding to the energy state of the spin direction localized in the spin density of Co1 atom is (0, 0, 1), and if the spin direction is the energy state of the upward direction, the spin logic function of input (0, 0, 1) to output (1) can be realized. The present application realizes the process from input (0, 0, 0) to output (0), input (0, 0, 1) to output (1), input (1, 0, 0) to output (1), input (1, 0, 1) to output (1), input (0, 1, 0) to output (0), and input (0, 1, 1) to output (1). The processes can be controlled and represented by spin dynamics processes Λ11, Λ6, Λ1, Λ7, Λ13 and Λ4, respectively. Λ represents the order mark of the spin dynamics process realized in the present application.
[0060] Specific example:
[0061] First, according to step 1 described in the content of the application, the model graph of four magnetic center graphyne is constructed as shown in Figure 2 and Figure 3 .
[0062] As shown in Table 1, the spin density distribution on the 10 lowest energy triplet states in the Co4&gamma-Graphyne structure is shown. The spin localization position of the system is analyzed and judged, which is used for the selection of the initial state and the final state in the spin dynamics process. According to the steps 2, 3 and 4, the spin flip between Co2 and Co3 magnetic atoms in the Co4&gamma-Graphyne structure designed in step 1 is realized, as shown in Figure 3 The upper subgraph is the forward (FW) spin flip process, and the lower subgraph is the corresponding reverse process (BW). As shown in Figure 5 , Figure 6 This application also realizes the spin transfer processes between Co1 and Co4, Co2 and Co3, Co2 and Co4, and Co3 and Co4.
[0063] Table 1 Spin density distribution on the 10 lowest energy triplet states in Co4&gamma-Graphyne structure
[0064]
[0065] The laser pulse parameters used in the spin dynamics process realized in the Co4&gamma-Graphyne structure are shown in Table 2. Wherein ↓ and ↑ represent spin-down and spin-up spin states, respectively, FW and BW represent forward and reverse processes, respectively, θ, represents the laser pulse incidence angle in spherical coordinates, γ represents the angle between the laser polarization direction and the optical plane, FWHM is the laser half width, and β is the elliptical angle of the laser pulse. The average time consumption of all logic gates realized by the present application is about 1 ps, and the guarantee degree is more than 95%. In the past research, the time scale can only reach the nanosecond time scale.
[0066] Table 2 Laser pulse parameters used in the spin dynamics process realized in the Co4&gamma-Graphyne structure
[0067]
[0068]
[0069] According to the above-mentioned step 6, each spin state input and output signal is one-to-one corresponding, based on the function truth table of the latch in Table 3, in the spin dynamics process, S, R, Q are defined as input variables, and Q * is an output variable. As shown in Table 3, the present application successfully realizes the function of the corresponding spin latch through the spin dynamics process.
[0070] Table 3 Truth table and time consumption of the spin latch realized and its function
[0071]
[0072] In combination with Table 2 and Table 3, the present application can realize the basic function of the latch, for example, to realize the set-1 function, Λ1 or Λ7 process can be controlled. The excellent point of the present application is that the spin latch device unit is designed from the micro-nano scale, the consumed logic unit is less, the completion time is ultra-high-speed sub-picosecond, the fidelity is more than 95%, and compared with the traditional latch, the influence of the glitch is avoided. The present application is beneficial to provide ideas for the next generation of ultra-high-speed high-fidelity spin latch device design.
[0073] The above content only illustrates the technical idea of the present application, and cannot limit the protection scope of the present application. Any modification made according to the technical idea of the present application on the basis of the technical scheme falls within the protection scope of the claims of the present application.
Claims
1. A method of constructing a spin locker based on ultrafast magneto-optical dynamics, characterized by, The application relates to a spin latch based on ultrafast magneto-optical dynamics. The application comprises the following steps: A Co4 & gamma-graphyne structure model is constructed by doping four Co atoms based on gamma-graphyne; The stable configuration of the Co4 & gamma-graphyne structure model is obtained by structure optimization; The spin density of the ground state and the excited state of the optimized Co4 & gamma-graphyne structure model is calculated, and the localization position and the spin direction of the spin density are analyzed and judged; The logic input variable and the logic output variable of the spin latch are defined according to the localization position and the spin direction of the spin density; A three-bit logic gate is constructed by the spin dynamics process induced by laser according to the defined logic input variable and the logic output variable, and the spin latch based on ultrafast magneto-optical dynamics is constructed. The Co atoms comprise Co1, Co2, Co3 and Co4, wherein the three atoms of Co1, Co2 and Co3 are located at the upper position of the gamma-graphyne plane model, and the Co4 atom is located at the lower position of the gamma-graphyne plane model; the logic input variable of the spin latch is defined by the localization position and the spin direction of the spin density; and the logic output variable of the spin latch is defined by the spin direction. The structure optimization of the Co4 & gamma-graphyne structure model comprises the following steps: S1: the Hartree-Fock equation method is applied to solve the energy gradient of the system; S2: the structure adjustment direction and the step length are determined by analyzing the energy gradient of the system; S3: the structure coordinates are adjusted, and the energy gradient of the system is calculated again; 2. The method of constructing a spin-latch based on ultrafast magneto-optical dynamics according to claim 1, wherein, S4: the energy gradient of the system is judged by the potential energy surface, if the energy of the system reaches the minimum value, the calculation is ended, otherwise the above steps are cycled.
3. The method of constructing a spin-latch based on ultrafast magneto-optical dynamics according to claim 1, wherein, The symmetry matching cluster configuration interaction method is adopted to calculate the ground state and the excited state of the optimized Co4 & gamma-graphyne structure model.
4. The method of constructing a spin-latch based on ultrafast magneto-optical dynamics according to claim 1, wherein, The localization position and the spin direction of the spin density of the system are analyzed by using the Mulliken population analysis method.
5. A spin-latch based on ultrafast magneto-optical dynamics, characterized in that, The spin density is concentrated on the Co1 atom, and is defined as (0, 0); the spin density is concentrated on the Co2 atom, and is defined as (0, 1); the spin density is concentrated on the Co3 atom, and is defined as (1, 0); the spin density is concentrated on the Co4 atom, and is defined as (1, 1); the spin direction is defined as 0 when the spin direction is downward, and the spin direction is defined as 1 when the spin direction is upward.
6. A system for constructing a spin locker based on ultrafast magneto-optical dynamics, characterized by, The spin latch based on ultrafast magneto-optical dynamics is constructed by the construction method of the spin latch based on ultrafast magneto-optical dynamics in any one of the above claims 1 to 4, and the spin dynamics process of the corresponding process is realized by laser control to realize the function of the traditional latch. The construction method of the spin latch based on ultrafast magneto-optical dynamics in any one of the above claims 1 to 4 comprises the following steps: A model construction module is used to construct a Co4 & gamma-graphyne structure model by doping four Co atoms based on gamma-graphyne; An optimization module is used to obtain the stable configuration of the Co4 & gamma-graphyne structure model by structure optimization; A calculation module is used to calculate the spin density of the ground state and the excited state of the optimized Co4 & gamma-graphyne structure model. A calculation module is configured to calculate the spin density of the optimized Co4 & gamma-Graphyne structure model in a ground state and an excited state, and analyze and judge the spin density localization position and the spin direction of the system; A definition module is configured to define logic input variables and logic output variables of the spin latch according to the spin density localization position and the spin direction judgment result; A spin latch design module is configured to construct a three-bit logic gate through a laser-induced spin dynamics process according to the defined logic input variables and logic output variables, and construct the spin latch based on ultrafast magneto-optical dynamics. 7.An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the construction method of the spin latch based on ultrafast magneto-optical dynamics according to any one of claims 1-4 when executing the computer program.
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