A method and device for preparing a perovskite thin film and a perovskite solar cell

Abstract

The application provides a preparation method and device of a perovskite thin film and a perovskite solar cell component, and relates to the technical field of perovskite solar cells. The method comprises the following steps: pre-coating a first perovskite liquid film on an electron transport layer, drying the first perovskite liquid film to form a perovskite precursor thin film, and polishing the perovskite precursor thin film by using a laser; coating a second perovskite liquid film on the polished perovskite precursor thin film, so that the coating liquid can penetrate into the pores of the perovskite precursor thin film and fill the internal pores of the perovskite precursor thin film; and drying and annealing to form a second perovskite thin film. The method can improve the surface roughness of the thin film, reduce the non-radiation recombination center caused by defects, is more conducive to charge transmission, and can further passivate the perovskite precursor thin film by filling the internal pores, so that the method has the advantages of improving the defects of the perovskite thin film and improving the quality of the perovskite thin film.

Description

Technical Field

[0001] This invention belongs to the field of perovskite solar cell technology, and specifically relates to a method and apparatus for preparing perovskite thin films and perovskite solar cell modules. Background Technology

[0002] Perovskite solar cells mainly utilize photovoltaic materials with perovskite structures, such as ABX3 (A=CH3NH3+, NH=CHNH3+, etc.; B=Pb2+, Sn2+, etc.; X=Cl-, Br-, I-, etc.), to achieve photoelectric conversion.

[0003] Due to its excellent carrier mobility, high absorption coefficient, low processing cost, wide availability of raw materials, simple process, and ability to be made into flexible batteries, it has attracted great attention from the business community and has become a new type of thin-film solar cell with great market potential.

[0004] However, before the commercialization of perovskite solar cells can be achieved, the long-term stability issue must first be addressed. The main factor causing instability is the large number of defects present in the perovskite thin film and its interface.

[0005] These defects can form charge traps, capturing some charge carriers and inducing nonradiative recombination, leading to the loss of photogenerated charge carriers and a decline in device performance. How to eliminate the adverse effects of this process has become one of the important research topics in the field of perovskite solar cell applications.

[0006] Current methods, such as perovskite doping or interface passivation processes, both require consideration of solvent selection and removal. Otherwise, the perovskite film will be damaged, leading to reduced device efficiency, which not only increases material costs but also makes large-scale industrialization difficult.

[0007] The existing fabrication process for large-area flexible substrate modules mainly adopts roll-to-roll technology. However, roll-to-roll fabrication technology has many limitations for the fabrication of perovskite solar cells. For example, the passivation method of perovskite thin film in roll-to-roll technology is limited. It is difficult to control the passivation time in the continuous production process using conventional solution passivation, resulting in insufficient passivation or incomplete solvent removal, which in turn affects the quality of perovskite thin film.

[0008] Controlling the yield rate in roll-to-roll processes based on solution passivation is difficult; a single operational error can lead to a large number of defective products.

[0009] In summary, how to provide a method for preparing perovskite thin films that can improve film defects and enhance film quality is a technical problem that urgently needs to be solved. Summary of the Invention

[0010] The purpose of this invention is to overcome the shortcomings of the prior art and provide a method and apparatus for preparing perovskite thin films and perovskite solar cell modules. By laser polishing the perovskite precursor film, the surface roughness of the film can be improved, reducing the number of non-radiative recombination centers caused by defects, which is more conducive to charge transport. A second perovskite liquid film is coated on the polished perovskite precursor film, so that the coating liquid can penetrate into the pores of the perovskite precursor film and fill the internal pores of the perovskite precursor film, thereby further passivating the perovskite precursor film.

[0011] This invention provides a method for preparing a perovskite layer, comprising the following steps:

[0012] A first perovskite liquid film is pre-coated on the electron transport layer and dried to form a perovskite precursor film. The perovskite precursor film is then polished using a laser.

[0013] A second perovskite liquid film is coated on the polished perovskite precursor film, so that the coating liquid can penetrate into the pores of the perovskite precursor film and fill the internal pores of the perovskite precursor film; after drying and annealing, the second perovskite film is formed.

[0014] Furthermore, the concentration of the second perovskite liquid film coating solution is greater than the concentration of the first perovskite liquid film coating solution.

[0015] The present invention provides a perovskite thin film obtained by the perovskite thin film preparation method as described in any of the preceding claims.

[0016] This invention provides a method for preparing perovskite solar cell modules, comprising the following steps:

[0017] S1: Obtain the substrate, pre-treat the substrate, deposit the bottom electrode layer, and perform P1 laser etching;

[0018] S2: A first transport layer is prepared on the bottom electrode layer;

[0019] S3: A perovskite thin film is prepared on the first transport layer, wherein the perovskite thin film comprises a perovskite precursor film and a second perovskite thin film stacked sequentially.

[0020] S4: A second transport layer is prepared on the perovskite film, and P2 laser etching is performed after annealing.

[0021] S5: A top electrode layer is prepared on the second transport layer and P3 laser etching is performed to obtain a perovskite solar cell module.

[0022] This invention provides a perovskite solar cell, which is obtained by the perovskite solar cell preparation method described above.

[0023] This invention provides an apparatus for fabricating perovskite solar cell modules as described above, comprising an unwinding device and a winding device arranged along the thin film transport direction, and further comprising a bottom electrode layer fabrication unit, a first transport layer fabrication unit, a perovskite thin film fabrication unit, a second transport layer fabrication unit, and a top electrode layer fabrication unit arranged sequentially between the unwinding device and the winding device.

[0024] The perovskite thin film preparation unit includes a first perovskite thin film deposition device and a laser polishing device arranged sequentially along the film transport direction. The first perovskite thin film deposition device is used to deposit and prepare a perovskite thin film on the first transport layer, and the laser polishing device is used to polish the aforementioned perovskite thin film.

[0025] Furthermore, the perovskite thin film preparation unit also includes a second perovskite thin film deposition device disposed after the laser polishing device; the second perovskite thin film deposition device is used to prepare a second perovskite thin film on the aforementioned perovskite precursor thin film.

[0026] Furthermore, the bottom electrode layer fabrication unit includes a substrate pretreatment device, a bottom electrode deposition device, and a first laser etching device arranged sequentially along the thin film transport direction; the substrate is pretreated by the substrate pretreatment device, the bottom electrode deposition device is used to deposit the bottom electrode layer on the pretreated substrate, and the first laser etching device is used to perform P1 laser etching on the substrate pretreated by the substrate pretreatment device.

[0027] Furthermore, the first transport layer fabrication unit includes a first transport layer deposition apparatus arranged sequentially along the thin film transport direction; the first transport layer deposition apparatus is used to fabricate a first transport layer on the bottom electrode layer.

[0028] Furthermore, the second transport layer fabrication unit includes a second transport layer deposition device and a second laser etching device arranged sequentially along the film transport direction; the second transport layer is fabricated on the perovskite film by the second transport layer deposition device, and the second laser etching device is used to perform P2 laser etching on the aforementioned second transport layer.

[0029] Furthermore, the top electrode layer fabrication unit includes a top electrode layer deposition apparatus and a third laser etching apparatus; a metal electrode is deposited on the second transport layer by the top electrode layer deposition apparatus, and the third laser etching apparatus is used to perform P3 laser etching on the aforementioned metal electrode.

[0030] Furthermore, it also includes a packaging device disposed between the top electrode layer preparation unit and the winding device.

[0031] By adopting the above technical solution, this invention, as an example, has the following advantages and positive effects compared with the prior art:

[0032] 1. By using a laser polishing device to process the induced ionization process, the surface roughness of the perovskite precursor film is reduced, the surface of the perovskite precursor film becomes smoother, defects are reduced, and non-radiative recombination centers caused by defects are reduced, which is more conducive to charge transport. Furthermore, the fill factor of the perovskite film after laser polishing can be significantly increased.

[0033] 2. After polishing the surface of the perovskite precursor film, a second perovskite liquid film is coated. The interface between the liquid film and the polished perovskite precursor film can be in full contact. In addition, a trace amount of coating liquid can penetrate into the pores of the perovskite precursor film, filling the internal pores of the perovskite precursor film, thereby further passivating the perovskite precursor film.

[0034] 3. The smoother surface of the polished perovskite precursor film makes the contact surface with the second perovskite film denser and seamless, thereby increasing the difficulty for water and oxygen to enter the perovskite precursor film. This, to a certain extent, inhibits non-radiative recombination and improves the water and oxygen stability of the device.

[0035] 4. The passivation method of this invention is suitable for the preparation process of large-area flexible perovskite thin films. It does not require the introduction of other passivating agents, saves costs, and the process is easy to control, thus having practical application value. Attached Figure Description

[0036] Figure 1 A cross-sectional view of a perovskite thin film after laser polishing, provided in an embodiment of the present invention.

[0037] Figure 2 Efficiency test graphs provided for embodiments of the present invention. Detailed Implementation

[0038] The technical solutions disclosed in this invention will be described in detail below with reference to specific embodiments.

[0039] Techniques and methods known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques and methods should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.

[0040] In the description of this invention, it should be understood that the terms "between" and "above" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0041] The present invention provides an apparatus for fabricating perovskite solar cell modules by roll-to-roll, comprising an unwinding device and a winding device arranged along the thin film transport direction.

[0042] Optionally, the unwinding device is configured as a single-station or dual-station device, and includes an unwinding shaft that can be rotated clockwise and / or counterclockwise. Its rotation is controlled by a controller.

[0043] Similarly, the winding device can be configured with reference to the unwinding device described above.

[0044] The apparatus for fabricating perovskite solar cell modules by roll-to-roll further includes a bottom electrode layer fabrication unit, a first transport layer fabrication unit, a perovskite thin film fabrication unit, a second transport layer fabrication unit, and a top electrode layer fabrication unit arranged sequentially between the unwinding device and the winding device.

[0045] The bottom electrode layer fabrication unit includes a substrate pretreatment device, a bottom electrode deposition device, and a first laser etching device arranged sequentially along the thin film transport direction. The substrate is pretreated by the substrate pretreatment device, the bottom electrode deposition device is used to deposit the bottom electrode layer on the pretreated substrate, and the first laser etching device is used to perform P1 laser etching on the bottom electrode layer deposited on the substrate.

[0046] By way of example and not limitation, the substrate pretreatment device includes a substrate ultrasonic cleaning assembly, an ultraviolet light treatment assembly, and a gas drying assembly.

[0047] By way of example and not limitation, the bottom electrode deposition apparatus may be one of a brush coating apparatus or a slot coating apparatus. The first laser etching apparatus is used to perform P1 laser etching on the bottom electrode layer.

[0048] The first transport layer fabrication unit includes a first transport layer deposition apparatus arranged sequentially along the thin film transport direction; the first transport layer is fabricated on the bottom electrode layer by means of the first transport layer deposition apparatus.

[0049] Optionally, the first transport layer deposition apparatus may be a brush coating apparatus or a slot extrusion coating apparatus.

[0050] For example, when the first transport layer deposition apparatus is a brush coating apparatus, it includes a brush coating structure for brush coating solution and a liquid supply structure for supplying liquid to the brush coating structure. The brush coating solution is heated and annealed to form the first transport layer.

[0051] The perovskite thin film preparation unit includes a first perovskite thin film deposition device and a laser polishing device arranged sequentially along the film transport direction. The first perovskite thin film deposition device is used to deposit and prepare a perovskite precursor thin film on the first transport layer.

[0052] Similarly, the first deposition apparatus for perovskite thin films can be a brush coating apparatus or a slot extrusion coating apparatus. The same applies to the second deposition apparatus for perovskite thin films described below.

[0053] The laser polishing device is used to polish the aforementioned perovskite thin film with a laser, thereby obtaining a more uniform film surface, reducing the surface roughness of the film, passivating surface defects, reducing non-radiative recombination centers caused by surface defects, which is more conducive to charge transport, thereby improving the fill factor, photoelectric conversion efficiency and stability of the perovskite thin film.

[0054] Preferably, the perovskite thin film preparation unit further includes a second perovskite thin film deposition device disposed after the laser polishing device; the second perovskite thin film deposition device is used to prepare a second perovskite thin film on the aforementioned perovskite thin film.

[0055] The second perovskite film is disposed between the polished perovskite precursor film and the second transport layer. In addition to effectively passivating the internal defects of the perovskite precursor film, it can also serve as a hole blocking and moisture-absorbing passivation layer, effectively suppressing charge recombination and improving the battery's stability to humidity.

[0056] Optionally, the second deposition apparatus for perovskite thin films can be one of a brush coating apparatus, a slot coating apparatus, or an inkjet printing apparatus.

[0057] The second transport layer fabrication unit includes a second transport layer deposition device and a second laser etching device arranged sequentially along the film transport direction; the second transport layer is fabricated on the aforementioned perovskite film by the second transport layer deposition device, and the second laser etching device is used to perform P2 laser etching.

[0058] The top electrode layer fabrication unit includes a top electrode layer deposition apparatus and a third laser etching apparatus; a metal electrode is deposited on the second transport layer using the top electrode layer deposition apparatus.

[0059] By way of example and not limitation, the top electrode deposition apparatus includes a vacuum deposition chamber containing a magnetron target, which forms a metal electrode by magnetron sputtering.

[0060] The third laser etching device is used to perform P3 laser etching on the aforementioned metal electrode.

[0061] This invention provides a method for preparing perovskite thin films, comprising the following steps:

[0062] A first perovskite liquid film is pre-coated on the electron transport layer and dried to form a perovskite precursor film. The perovskite precursor film is then polished using a laser to reduce the surface roughness of the film, thereby reducing surface defects.

[0063] A second perovskite liquid film is coated onto the polished perovskite precursor film. The liquid film is in full contact with the interface of the polished perovskite precursor film. In addition, a small amount of spin-coating liquid can penetrate into the pores of the perovskite precursor film, thereby allowing the coating liquid to penetrate into the pores of the perovskite precursor film and fill the internal pores of the perovskite precursor film, thus further passivating the perovskite precursor film. After drying and annealing, the second perovskite film is formed.

[0064] In specific applications, the following process can be followed: A CsFAMAPbI3 first perovskite liquid film with a thickness of about 400-600 nm is slit-coated on the first transport layer, and the perovskite precursor film is obtained after annealing.

[0065] A femtosecond laser was used to process the perovskite precursor film with a pulse frequency of 1 kHz, a center wavelength of λ = 800 nm, and a maximum average energy of about 7 mJ.

[0066] A second perovskite liquid film of CsFAMAPbI3 with a thickness of about 20-100 nm was coated on the polished perovskite precursor film using a slit coating method, followed by annealing to obtain the second perovskite film.

[0067] Preferably, the concentration of the second perovskite liquid film coating solution is greater than the concentration of the first perovskite liquid film coating solution.

[0068] Experiments revealed that when the concentration of the second perovskite liquid film coating solution was greater than that of the first perovskite liquid film coating solution, the perovskite film quality was higher, resulting in improved photoelectric conversion efficiency. This is presumably due to the infiltration of trace amounts of the second perovskite solution into the perovskite precursor film, modifying its internal defects.

[0069] The present invention also provides a method for preparing a perovskite solar cell module, which can be implemented using the above-described roll-to-roll perovskite solar cell module preparation apparatus, comprising the following steps:

[0070] S1: Obtaining the substrate: By way of example and not limitation, the substrate may be glass or a transparent polymer. Transparent polymers include, but are not limited to, polyetherimide (PEI), polyethylene terephthalate (PET), or polyethylene naphthalate (PEN).

[0071] Obtaining the substrate also includes cleaning the substrate, which can be done using deionized water, detergent, acetone, isopropanol or anhydrous ethanol in an ultrasonic cleaner, and then dried with nitrogen for later use.

[0072] The bottom electrode layer is obtained by deposition after pretreatment of the substrate using the bottom electrode layer fabrication unit.

[0073] As an example and not a limitation, ITO or FTO is sputtered onto an S1-treated substrate using magnetron sputtering to prepare a bottom electrode layer.

[0074] The bottom electrode layer is laser-etched using a first laser etching device, with a P1 laser line marking process. The width of P1 is approximately 10-100 μm.

[0075] Optionally, laser etching can be performed using focused etching.

[0076] S2: The first transport layer is prepared on the bottom electrode layer by the first transport layer preparation unit.

[0077] As an example rather than a limitation, a layer of SnO2 with a thickness of about 20-50 nm can be coated on the bottom electrode layer using the slit coating method and treated at 150 °C for 20-40 min.

[0078] The first transport layer can also be any one of the following materials: titanium dioxide, zinc oxide, cadmium sulfide, indium trioxide, tungsten oxide, cerium oxide, fullerene derivatives, or dopants.

[0079] S3: A perovskite thin film is prepared on the first transport layer by a perovskite thin film preparation unit. In particular, the perovskite thin film includes a perovskite precursor film and a second perovskite thin film stacked sequentially.

[0080] S4: A second transport layer is prepared on the perovskite thin film using the second transport layer preparation unit.

[0081] By way of example and not limitation, a second transport layer Spiro-OMeTAD with a thickness of about 150-200 nm was prepared using the slit coating method.

[0082] Furthermore, the annealed second transport layer is subjected to P2 laser etching, with a P2 width of approximately 50-100 μm.

[0083] The second transport layer can also be any one of PTAA, nickel oxide, cuprous iodide, or PEDOT:PSS.

[0084] S5: The top electrode layer is fabricated on the second transport layer by the top electrode layer fabrication unit: by way of example and not limitation, an electrode Ag with a thickness of about 100 nm is deposited on the second transport layer by vacuum evaporation.

[0085] Furthermore, the top electrode layer is subjected to P3 laser etching, with a P3 width of approximately 80-150 μm.

[0086] The top electrode layer material can also be any one of gold, silver, copper or aluminum.

[0087] Example 1

[0088] This embodiment provides an example of a method for preparing perovskite thin films. The perovskite is a CsFAMAPbI3 system, and the solvent is DMF & DMSO. 135.88 mg FAI, 25.44 mg MAI, and 461 mg PbI2 are weighed and dissolved in 950 μL of a DMF & DMSO mixed solution A, with a ratio of approximately 4:1. The solution is stirred overnight at 60°C. Then, 259.81 mg CsI is weighed and dissolved in 1 mL of DMSO. The solution is stirred at 70°C for approximately 2-3 hours to obtain a CsI solution. 50 μL of the CsI solution is added to the mixed solution A to form 1 mL of a 1 M perovskite precursor solution, which is the first perovskite liquid film coating solution.

[0089] Perovskite precursor films with a thickness of approximately 500 nm were obtained using a slit coating method.

[0090] Laser polishing conditions: moving speed V = 0.4 mms-1, defocus value D = 600 μm, peak power density 1.26 × 10¹² Wcm-2, pulse duration approximately 25 fs-30 fs.

[0091] A second perovskite liquid film of CsFAMAPbI3 with a thickness of about 20 nm was coated on the polished perovskite precursor film using a slit coating method, and then annealed to obtain the second perovskite film.

[0092] The preparation method of the second perovskite coating solution of CsFAMAPbI3 is the same as that of the first perovskite liquid film coating solution, and the concentration is about 1.2M.

[0093] Thus, the perovskite thin film was obtained.

[0094] Example 2

[0095] This embodiment provides an example of a method for fabricating a perovskite solar cell having the above-described perovskite thin film.

[0096] S1: ITO conductive flexible glass is used as the flexible transparent bottom electrode.

[0097] The glass is unwound by an unwinding device and enters a substrate pretreatment unit. The substrate pretreatment unit then performs a cleaning and ozone pretreatment process on the ITO conductive flexible glass.

[0098] The flexible transparent bottom electrode layer is laser scribing processed using the first laser etching device, with a line width of approximately 50 μm for P1.

[0099] S2: A layer of SnO2 with a thickness of about 20-50 nm is spin-coated onto the bottom electrode layer using slit coating, and then treated at 150℃ for 20-40 min.

[0100] S3: In this embodiment, the perovskite is a CsFAMAPbI3 system, and the preparation method is the same as in Example 1, to obtain a first perovskite liquid film coating solution with a concentration of 0.6 M.

[0101] A perovskite precursor film with a thickness of approximately 400 nm was obtained using the slit coating method.

[0102] Laser polishing conditions: moving speed V = 0.4 mms-1, defocus value D = 600 μm, peak power density 1.26 × 10¹² Wcm-2, pulse duration approximately 25 fs-30 fs.

[0103] The preparation method of the CsFAMAPbI3 second perovskite liquid film coating solution is the same as that of the first perovskite precursor solution, with a concentration of approximately 1 M.

[0104] A second perovskite liquid film of CsFAMAPbI3 with a thickness of about 50 nm was coated on the polished perovskite precursor film using a slit coating method, and then annealed to obtain the second perovskite film.

[0105] S4: A second transport layer, Spiro-OMeTAD, with a thickness of 150-200 nm, was prepared on the perovskite thin film using a slot coating method. Laser scribing was then performed using a second laser etching device, resulting in a P2 linewidth of approximately 100 μm.

[0106] S5: A 100 nm thick Ag electrode is obtained by vapor deposition on the hole transport layer.

[0107] Laser scribing is performed using a third laser etching device, and the P3 linewidth is approximately 120µm.

[0108] S6: The film enters the encapsulation device, encapsulation adhesive is printed on the entire film, the encapsulation film is bonded, and curing is performed to complete the encapsulation process. Finally, the film is wound up by a winding device.

[0109] Comparative Example 1

[0110] This comparative example provides an example of a method for fabricating a perovskite solar cell comprising a perovskite precursor film that has not been laser-polished and has no second perovskite film.

[0111] The methods for obtaining the flexible transparent bottom electrode, the first transport layer, the perovskite precursor film, the second transport layer, and the top electrode can all refer to the above embodiments. The only difference is that after the perovskite precursor film is prepared, there is no laser polishing and secondary deposition step. Instead, the second transport layer and the top electrode are directly coated on the perovskite precursor film.

[0112] Comparative Example 2

[0113] In this comparative example, the methods for obtaining the flexible transparent bottom electrode, the first transport layer, the perovskite thin film, the second transport layer, and the top electrode can all refer to the above embodiments. The only difference is that the concentration of the first perovskite liquid film solution is 1.4M, the concentration of the second perovskite liquid film solution is 0.6M, and the thickness is also the same as in the above embodiments, without any specific limitation.

[0114] It should be noted that in the above embodiments, the lines P1, P2, and P3 can all be formed by laser etching using a femtosecond laser. During the laser etching process, the pulse duration can be 1fs-100fs. However, this application does not limit the method of etching to form the above lines or the conditions of the above etching process, and it depends on the specific circumstances.

[0115] Instruction manual attached Figure 1 The image shows a cross-sectional view of the perovskite thin film after laser polishing, reflecting the change in surface roughness after laser polishing.

[0116] Instruction manual attached Figure 2 The efficiency test results for Example 2, Comparative Example 1, and Comparative Example 2 are shown. As can be seen from the figures, Example 2 is more efficient than Comparative Example 1 and Comparative Example 2.

[0117] Within the scope of this disclosure, terms such as “comprising” should be interpreted by default as inclusive or open-ended, rather than exclusive or closed, unless expressly defined as such. All technical, scientific, or other terms shall be interpreted as understood by one of those skilled in the art, unless defined as such. Public terms found in dictionaries should not be interpreted in an overly idealistic or impractical manner in the context of the relevant technical documentation, unless expressly defined as such in this disclosure.

[0118] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0119] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A method for preparing a perovskite thin film, characterized in that, Includes the following steps: A first perovskite liquid film is pre-coated on the first transport layer and dried to form a perovskite precursor film. The perovskite precursor film is then polished using a laser. A second perovskite liquid film is coated on the polished perovskite precursor film, and after drying and annealing, a second perovskite film is formed. The concentration of the second perovskite liquid film coating solution is greater than the concentration of the first perovskite liquid film coating solution. The laser polishing conditions are: pulse frequency 1 kHz, center wavelength 800 nm, pulse duration 25–30 fs, and peak power density 1.26 × 10¹² W / cm².

2. A perovskite thin film, characterized in that: The perovskite thin film is obtained by the method for preparing a perovskite thin film as described in claim 1.

3. A method for fabricating a perovskite solar cell, characterized in that, Includes the following steps: S1: Obtain the substrate, pre-treat the substrate, deposit the bottom electrode layer, and perform P1 laser etching; S2: A first transport layer is prepared on the bottom electrode layer; S3: A perovskite thin film is prepared on the first transport layer, the perovskite thin film comprising a perovskite precursor film and a second perovskite thin film stacked sequentially, the perovskite thin film being obtained by the perovskite thin film preparation method as described in claim 1. S4: A second transport layer is prepared on the perovskite film, and P2 laser etching is performed after annealing. S5: A top electrode layer is prepared on the second transport layer and P3 laser etching is performed to obtain a perovskite solar cell module.

4. A perovskite solar cell, characterized in that: The perovskite solar cell is obtained by the method for preparing a perovskite solar cell as described in claim 3.

5. An apparatus for fabricating a roll-to-roll perovskite solar cell module using the method for fabricating a perovskite solar cell as described in claim 3, comprising an unwinding device and a rewinding device arranged along the thin film transport direction, characterized in that: It also includes a bottom electrode layer preparation unit, a first transport layer preparation unit, a perovskite thin film preparation unit, a second transport layer preparation unit, and a top electrode layer preparation unit arranged sequentially between the unwinding device and the winding device; The perovskite thin film preparation unit includes a first perovskite thin film deposition device and a laser polishing device arranged sequentially along the film transport direction. The first perovskite thin film deposition device is used to deposit and prepare a perovskite precursor thin film on the first transport layer, and the laser polishing device is used to polish the aforementioned perovskite precursor thin film.

6. The apparatus for roll-to-roll fabrication of perovskite solar cell modules according to claim 5, characterized in that: The perovskite thin film preparation unit further includes a second perovskite thin film deposition device disposed after the laser polishing device; the second perovskite thin film deposition device is used to prepare a second perovskite thin film on the aforementioned perovskite precursor thin film.

7. The apparatus for roll-to-roll fabrication of perovskite solar cell modules according to claim 5, characterized in that: The bottom electrode layer fabrication unit includes a substrate pretreatment device, a bottom electrode deposition device, and a first laser etching device arranged sequentially along the thin film transport direction; the substrate is pretreated by the substrate pretreatment device, the bottom electrode deposition device is used to deposit the bottom electrode layer on the treated substrate, and the first laser etching device is used to perform P1 laser etching on the bottom electrode layer deposited on the substrate.

8. The apparatus for roll-to-roll fabrication of perovskite solar cell modules according to claim 5, characterized in that: The first transport layer fabrication unit includes a first transport layer deposition apparatus arranged sequentially along the thin film transport direction; the first transport layer deposition apparatus is used to fabricate a first transport layer on the bottom electrode layer.

9. The apparatus for roll-to-roll fabrication of perovskite solar cell modules according to claim 6 or 5, characterized in that: The second transport layer fabrication unit includes a second transport layer deposition device and a second laser etching device arranged sequentially along the film transport direction; the second transport layer is fabricated on the aforementioned perovskite film by the second transport layer deposition device, and the second laser etching device is used to perform P2 laser etching on the aforementioned second transport layer.

10. The apparatus for roll-to-roll fabrication of perovskite solar cell modules according to claim 5, characterized in that: The top electrode layer fabrication unit includes a top electrode layer deposition apparatus and a third laser etching apparatus; a metal electrode is deposited on the second transport layer by the top electrode layer deposition apparatus, and the third laser etching apparatus is used to perform P3 laser etching on the aforementioned metal electrode.

11. The apparatus for roll-to-roll fabrication of perovskite solar cell modules according to claim 5, characterized in that: It also includes a packaging device disposed between the top electrode layer preparation unit and the winding device.

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