A pre-evaporation water flushing method and water flushing device for improving electrode peeling

Abstract

This invention relates to the field of electrode manufacturing technology, and particularly to a pre-evaporation rinsing method and apparatus for improving electrode detachment. The pre-evaporation rinsing method includes the following steps: S1: sequentially rinsing the wafer from the top, simultaneously rinsing from the top and bottom, and rinsing from the bottom; S2: repeating S2 four times; S3: rinsing the wafer from the bottom for 200±20s; S4: rinsing the wafer from the bottom for 60±10s, while simultaneously draining water. This pre-evaporation rinsing method, by changing the direction of the rinsing water flow, ensures that dirt on the wafer surface is thoroughly cleaned before evaporation, thereby improving the problem of electrode detachment caused by pre-evaporation drying.

Description

Technical Field

[0001] This invention relates to the field of electrode manufacturing technology, and in particular to a pre-evaporation rinsing method and rinsing device for improving electrode detachment. Background Technology

[0002] Gallium nitride (GaN)-based light-emitting diodes (LEDs) possess advantages such as low power consumption, long lifespan, and high reliability, and are widely used in signal lights, backlight displays, automotive lighting, and indoor lighting. The electrode metal layer of an LED is a crucial component, serving as the leads for current expansion and the pads for connection to external circuits. Current technologies typically prepare the electrode metal layer using electron gun evaporation via electrode deposition. If the substrate surface is contaminated before electrode deposition, it can lead to electrode detachment, and in severe cases, even LED failure. Therefore, pretreatment of the substrate surface before electrode deposition is extremely important.

[0003] The current pretreatment method is PLSM + spin drying. Chinese invention patent CN115172144A discloses a method for cleaning wafers before vapor deposition, including the following steps: Step 1: After covering the semi-finished wafer with photoresist, a photolithography process is used to create P-type and N-type semiconductor holes on the photoresist; Step 2: A plasma coating machine performs two ionization processes on its cavity; Step 3: The semi-finished wafer obtained in Step 2 is placed in deionized water, and nitrogen gas is introduced to cause bubbling in the deionized water; Step 4: The semi-finished wafer obtained in Step 3 is placed in a cleaning tank and rinsed with deionized water at two different rates, followed by three spin drying processes with different average powers. This invention provides multiple ionization, rinsing, and spin drying processes with different powers, allowing the polymer to be removed by removal processes with more suitable power. Furthermore, the multiple processes with different power levels work together to more completely remove impurities from the surface of the semi-finished wafer, improving the cleanliness of the semi-finished wafer surface. However, the water outlet direction of this flushing device is unidirectional, which can easily cause microparticles to be unable to be ejected, resulting in contamination of the bottom of the electrode and electrode detachment. Summary of the Invention

[0004] In order to overcome the defects of the prior art, the technical problem to be solved by the present invention is to provide a method and device for rinsing before vapor deposition to improve electrode detachment.

[0005] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is: a pre-evaporation rinsing method for improving electrode detachment, comprising the following steps:

[0006] S1: The wafer is sequentially rinsed with water from the top, from both the top and bottom simultaneously, and from the bottom.

[0007] S2: Repeat S2 four times;

[0008] S3: Rinse the bottom of the wafer with water for 200±20s;

[0009] S4: Rinse the bottom of the wafer with water for 60±10s, and drain the water at the same time.

[0010] Another technical solution adopted in this invention is: a pre-evaporation rinsing device, which is applicable to the above-mentioned pre-evaporation rinsing method for improving electrode detachment.

[0011] The beneficial effects of this invention are as follows: The pre-evaporation rinsing method of this invention sequentially performs top rinsing, simultaneous top and bottom rinsing, and bottom rinsing on the wafer, repeating this process four times to achieve thorough surface cleaning; then, a longer rinsing time is applied from the bottom to ensure the surface is clean; finally, a bottom rinsing for 60±10 seconds is performed, while simultaneously draining water to remove contaminants and prevent electrode bottom contamination caused by rinsing. Using the pre-evaporation rinsing method of this invention ensures that dirt on the wafer surface is thoroughly cleaned before evaporation, thereby improving the problem of electrode detachment caused by pre-evaporation drying. Attached Figure Description

[0012] Figure 1 The image shown is a top view of a pre-evaporation rinsing apparatus according to a specific embodiment of the present invention.

[0013] Figure 2 The image shown is a side perspective view of the pre-evaporation rinsing apparatus according to a specific embodiment of the present invention.

[0014] Figure 3 The image shown is a front perspective view of the pre-evaporation rinsing apparatus according to a specific embodiment of the present invention.

[0015] Figure 4 The image shows a pre-evaporation rinsing apparatus according to Comparative Example 1 of the present invention.

[0016] Figure 5 The image shown is a diagram illustrating the effect of spin-drying according to Embodiment 1 of the present invention.

[0017] Figure 6 The figure shown is a diagram of the effect after spin drying in Comparative Example 1 of the present invention;

[0018] Figure 7 The image shown is a mapping diagram after spin drying according to Embodiment 1 of the present invention;

[0019] Figure 8 The diagram shown is a mapping diagram of the spin-drying process of Comparative Example 1 of the present invention.

[0020] Figure 9 The diagram shown is a mapping diagram of Comparative Example 2 of the present invention after spin drying;

[0021] Labeling explanation: 1. Water tank; 2. Support plate; 21. Bottom outlet; 3. Plug; 4. Top outlet. Detailed Implementation

[0022] To explain in detail the technical content, objectives, and effects of the present invention, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0023] The most crucial concept of this invention lies in: by changing the direction of the rinsing water flow, it ensures that the dirt on the wafer surface can be thoroughly cleaned before vapor deposition, thereby improving the problem of electrode detachment caused by spin drying before vapor deposition.

[0024] The present invention provides a pre-evaporation rinsing method for improving electrode detachment, comprising the following steps:

[0025] S1: The wafer is sequentially rinsed with water from the top, from both the top and bottom simultaneously, and from the bottom.

[0026] S2: Repeat S2 four times;

[0027] S3: Rinse the bottom of the wafer with water for 200±20s;

[0028] S4: Rinse the bottom of the wafer with water for 60±10s, and drain the water at the same time.

[0029] As can be seen from the above description, the beneficial effects of the present invention are as follows: The pre-evaporation rinsing method of the present invention changes the direction of the rinsing water flow, changing the original side-flow water outlet to QDR (Quick Drain) rinsing. This rinsing method sequentially performs top rinsing, top and bottom rinsing simultaneously, and bottom rinsing on the wafer, repeating this process four times to achieve thorough surface cleaning; then, it rinses from the bottom for 200±20s to ensure the surface is clean; finally, it rinses from the bottom for 60±10s, draining water simultaneously to remove contaminants rinsed out, preventing electrode bottom contamination caused by rinsing, thereby ensuring that the dirt on the wafer surface can be thoroughly cleaned before evaporation, thus improving the electrode detachment caused by pre-evaporation drying.

[0030] Furthermore, the top flushing time of S1 is 10±2s.

[0031] As can be seen from the above description, preliminary cleaning of the wafer's upper surface is achieved.

[0032] Furthermore, the simultaneous flushing time at the top and bottom of S1 is 25±5s.

[0033] As can be seen from the above description, increasing the direction of water rinsing allows for a more thorough cleaning of the wafer surface.

[0034] Furthermore, the bottom flushing time of S1 is 30±5s.

[0035] As described above, the direction of the water flow is changed to clean the lower surface.

[0036] Another technical solution adopted in this invention is: a pre-evaporation rinsing device, which is applicable to the above-mentioned pre-evaporation rinsing method for improving electrode detachment.

[0037] Please refer to Figures 1 to 3 As shown, it further includes a water tank, a support plate, a top water outlet and a bottom water outlet. The support plate is located at the bottom of the water tank, the bottom water outlet is provided on the support plate, and the top water outlet is located above the water tank.

[0038] As can be seen from the above description, the device is equipped with a top water outlet and a bottom water outlet, which can achieve flushing from different directions.

[0039] Furthermore, it also includes a stopper, which is placed in the sink.

[0040] As can be seen from the above description, the specific structure of the Casse is described in Chinese invention patent publication number CN115386962A.

[0041] Furthermore, the distance from the top of the stopper to the top of the water tank is 9–11 cm.

[0042] Furthermore, after the wafer is placed in the insert, the distance from the bottom of the wafer to the support plate is 1.5 to 2.5 cm.

[0043] As can be seen from the above description, there is a certain distance between the bottom of the wafer and the support plate to ensure that the wastewater after cleaning stays away from the wafer and prevents contamination of the lower surface of the wafer.

[0044] Please refer to Figures 1 to 3 As shown, Embodiment 1 of the present invention is as follows:

[0045] A pre-evaporation rinsing method for improving electrode detachment includes the following steps:

[0046] S1: The wafer is sequentially rinsed with water for 10 seconds at the top, 25 seconds at both the top and bottom, and 30 seconds at the bottom.

[0047] S2: Repeat S2 four times;

[0048] S3: Rinse the bottom of the chip with water for 200 seconds;

[0049] S4: Rinse the bottom of the chip with water for 60 seconds, and drain the water at the same time.

[0050] The flushing flow rate for top and bottom flushing is 1.5L / s, and the flushing flow rate for simultaneous top and bottom flushing is 3L / s. The water used is pure water.

[0051] The pre-evaporation rinsing device used in the above-mentioned pre-evaporation rinsing method includes a water tank 1, a support plate 2, a stopper 3, a top outlet 4, and a bottom outlet 21. The support plate 2 is located at the bottom of the water tank 1, and the bottom outlet 21 is provided on the support plate 2. The top outlet 4 is located above the water tank 1. The stopper 3 is placed in the water tank 1, and the distance from the top of the stopper 3 to the top of the water tank 1 is 10cm. After the wafer is placed in the stopper 3, the distance from the bottom of the wafer to the support plate 2 is 2cm. The volume of the water tank is 190L.

[0052] Comparative Example 1 of the present invention is:

[0053] A conventional pre-evaporation rinsing method involves continuously rinsing the wafer laterally for 480 seconds with a flow rate of 1 L / min, using pure water.

[0054] The pre-evaporation rinsing device used in the above-mentioned pre-evaporation rinsing method is described in [reference needed]. Figure 4 .

[0055] Comparative Example 2 of the present invention is as follows:

[0056] The difference between Comparative Example 2 and Example 1 of the present invention is that S1 involves sequentially rinsing the wafer at the bottom for 30 seconds, simultaneously rinsing the top and bottom for 25 seconds, and rinsing the bottom for 10 seconds.

[0057] After rinsing the wafers using the rinsing methods and devices of Example 1, Comparative Example 1, and Comparative Example 2, respectively, they were centrifuged and dried. The drying parameters were: 75℃, 2300 r / min, and 400 s. After drying, the electrodes of Example 1 and Comparative Example 1 were photographed using an MO microscope (10*50x magnification). The resulting images are as follows. Figure 5 and Figure 6 ,Depend on Figure 5 and Figure 6 It is known that conventional rinsing methods can easily lead to electrode detachment, while the rinsing method of the present invention can ensure that surface dirt can be thoroughly cleaned before vapor deposition, thereby improving the problem of electrode detachment.

[0058] Electrode mapping diagrams after spin drying in Example 1, Comparative Example 1, and Comparative Example 2 are as follows: Figures 7-9 ,Depend on Figure 7 and 9 It is known that changing the flushing sequence can easily result in contamination remaining at the bottom of the wafer.

[0059] Embodiment 2 of the present invention is as follows:

[0060] A pre-evaporation rinsing method for improving electrode detachment includes the following steps:

[0061] S1: The wafer is sequentially rinsed with water for 12 seconds at the top, 30 seconds at both the top and bottom, and 35 seconds at the bottom.

[0062] S2: Repeat S2 four times;

[0063] S3: Rinse the bottom of the chip with water for 220 seconds;

[0064] S4: Rinse the bottom of the chip with water for 70 seconds, draining water at the same time.

[0065] The pre-evaporation rinsing device used in the above-mentioned pre-evaporation rinsing method includes a water tank 1, a support plate 2, a plug 3, a top outlet 4, and a bottom outlet 21. The support plate 2 is located at the bottom of the water tank 1, and the bottom outlet 21 is provided on the support plate 2. The top outlet 4 is located above the water tank 1. The plug 3 is placed in the water tank 1, and the distance from the top of the plug 3 to the top of the water tank 1 is 11cm. After the wafer is placed in the plug 3, the distance from the bottom of the wafer to the support plate 2 is 2.5cm.

[0066] Embodiment 3 of the present invention is as follows:

[0067] A pre-evaporation rinsing method for improving electrode detachment includes the following steps:

[0068] S1: The wafer is sequentially rinsed with water for 8 seconds at the top, 20 seconds at both the top and bottom, and 25 seconds at the bottom.

[0069] S2: Repeat S2 four times;

[0070] S3: Rinse the bottom of the chip with water for 180 seconds;

[0071] S4: Rinse the bottom of the chip with water for 50 seconds, draining the water at the same time.

[0072] The pre-evaporation rinsing device used in the above-mentioned pre-evaporation rinsing method includes a water tank 1, a support plate 2, a plug 3, a top outlet 4, and a bottom outlet 21. The support plate 2 is located at the bottom of the water tank 1, and the bottom outlet 21 is provided on the support plate 2. The top outlet 4 is located above the water tank 1. The plug 3 is placed in the water tank 1, and the distance from the top of the plug 3 to the top of the water tank 1 is 9cm. After the wafer is placed in the plug 3, the distance from the bottom of the wafer to the support plate 2 is 1.5cm.

[0073] In summary, the pre-evaporation rinsing method provided by this invention changes the rinsing water flow direction, transforming the original side-flow rinsing into QDR (Quick Drain) rinsing. This rinsing method first performs a top rinse on the wafer to achieve initial cleaning of the upper surface; then, the rinsing direction is increased, with the top and bottom rinsed simultaneously for comprehensive cleaning of the wafer surface; next, the rinsing direction is changed to perform a bottom rinse for cleaning the lower surface; this process is repeated four times to achieve thorough surface cleaning; then, the bottom is rinsed for 200±20 seconds to ensure the surface is clean; finally, the bottom is rinsed for 60±10 seconds, with water drained simultaneously to remove contaminants and prevent electrode contamination caused by rinsing. This ensures that the surface dirt on the wafer is thoroughly cleaned before evaporation, thereby improving the electrode detachment caused by pre-evaporation drying.

[0074] The pre-evaporation rinsing device of the present invention is provided with a top water outlet 4 and a bottom water outlet 21, which can realize rinsing in different directions. During rinsing, the wafer is placed into the stopper 3, and the stopper 3 is placed on the support plate 2 in the water tank 1. The top and / or bottom of the wafer is rinsed through the top water outlet 4 and the bottom water outlet 21. During the rinsing process, since there is a certain distance between the bottom of the wafer and the support plate 2, the cleaned wastewater stays away from the wafer, preventing contamination of the lower surface of the wafer.

[0075] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent modifications made based on the content of the present invention specification and drawings, or direct or indirect applications in related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A pre-evaporation rinsing method to improve electrode detachment, characterized in that, Includes the following steps: S1: The wafer is sequentially rinsed with water from the top, from both the top and bottom simultaneously, and from the bottom. S2: Repeat S1 four times; S3: Rinse the bottom of the wafer with water for 200±20s; S4: Rinse the bottom of the wafer with water for 60±10s, and drain the water at the same time.

2. The pre-evaporation rinsing method for improving electrode detachment according to claim 1, characterized in that, The top flushing time of S1 is 10±2s.

3. The pre-evaporation rinsing method for improving electrode detachment according to claim 1, characterized in that, The simultaneous flushing time at the top and bottom of S1 is 25±5s.

4. The pre-evaporation rinsing method for improving electrode detachment according to claim 1, characterized in that, The bottom flushing time of S1 is 30±5s.

5. A pre-evaporation rinsing device, characterized in that, The method of rinsing before vapor deposition to improve electrode detachment as described in any one of claims 1-4 is applicable.

6. The pre-evaporation rinsing device according to claim 5, characterized in that, It includes a water tank, a support plate, a top water outlet and a bottom water outlet. The support plate is located at the bottom of the water tank, the bottom water outlet is provided on the support plate, and the top water outlet is located above the water tank.

7. The pre-evaporation rinsing device according to claim 6, characterized in that, It also includes a stopper, which is placed in the water tank.

8. The pre-evaporation rinsing device according to claim 7, characterized in that, The distance from the top of the stopper to the top of the water tank is 9-11 cm.

9. The pre-evaporation rinsing device according to claim 7, characterized in that, After the wafer is placed in the insert, the distance from the bottom of the wafer to the support plate is 1.5~2.5cm.

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