Multi-channel flow proportional controller and processing chamber

Abstract

Embodiments of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in a semiconductor processing chamber. In one embodiment, an apparatus includes a first flow ratio controller, a second flow ratio controller, and a gas injection insert, the first flow ratio controller including a first plurality of flow controllers, the second flow ratio controller including a second plurality of flow controllers, the gas injection insert including a first portion and a second portion. The first portion includes a first plurality of passages, and the second portion includes a second plurality of passages. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of passages. Each of one or more gas lines of the plurality of gas lines is connected to a passage of the first plurality of passages and a passage of the second plurality of passages.

Description

[0001] This invention application is a divisional application of the invention patent application with application number 201780061308.9, application date January 27, 2017, entitled "Multi-channel flow ratio controller and processing chamber". Technical Field

[0002] Embodiments of this disclosure generally relate to semiconductor processing chambers, and more specifically, to one or more flow proportional controllers and one or more gas injection inserts within a semiconductor processing chamber. Background Technology

[0003] Semiconductor substrates are processed for a wide range of applications, including the production of integrated devices and microdevices. One substrate processing method involves depositing a material (such as a dielectric or semiconductor material) onto the upper surface of a substrate. Material can be deposited in a transverse flow chamber by causing a process gas to flow parallel to the surface of the substrate placed on a support and by thermally dissociating the process gas to deposit material from the gas onto the substrate surface. However, the thickness of the material deposited on the substrate surface is often uneven, and the alloying or doping composition is often inhomogeneous, thus negatively impacting the performance of the final manufactured devices.

[0004] Therefore, it is necessary to improve the chamber to deposit materials with uniform thickness and uniform alloy or doping composition. Summary of the Invention

[0005] Embodiments of this disclosure generally relate to semiconductor processing chambers, and more specifically, to one or more flow rate proportional controllers and one or more gas injection inserts within a semiconductor processing chamber. In one embodiment, the apparatus includes a first flow rate proportional controller, a second flow rate proportional controller, and a gas injection insert. The first flow rate proportional controller includes a first plurality of flow controllers, the second flow rate proportional controller includes a second plurality of flow controllers, and the gas injection insert includes a first portion and a second portion. The first portion includes a first plurality of channels, and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second plurality of flow controllers to the first and second plurality of channels, wherein each of one or more of the plurality of gas lines is connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

[0006] In another embodiment, an apparatus includes a first flow proportional controller, a second flow proportional controller, and a gas injection insert. The first flow proportional controller includes a first plurality of flow controllers and a first flow controller; the second flow proportional controller includes a second plurality of flow controllers and a second flow controller; and the gas injection insert includes a first portion and a second portion. The first portion includes a first plurality of channels and a first inner channel, and the second portion includes a second plurality of channels and a second inner channel. The apparatus further includes a plurality of gas lines connecting the first and second plurality of flow controllers to the first and second plurality of channels, the first gas line connecting the first flow controller to the first inner channel, and the second gas line connecting the second flow controller to the second inner channel.

[0007] In another embodiment, an apparatus includes a chamber comprising an upper dome, a lower dome, a base ring disposed between the upper and lower domes, and a gas injection insert located within the base ring. The gas injection insert includes a first portion and a second portion. The first portion includes a first plurality of channels, and the second portion includes a second plurality of channels. The apparatus further includes a first flow proportional controller, a second flow proportional controller, and a plurality of gas lines. The first flow proportional controller includes a first plurality of flow controllers, the second flow proportional controller includes a second plurality of flow controllers, and the plurality of gas lines connect the first and second plurality of flow controllers to the first and second plurality of channels. Each of one or more of the plurality of gas lines is connected to a channel of the first plurality of channels and a channel of the second plurality of channels. Attached Figure Description

[0008] Figure 1 This is a schematic side cross-sectional view of the chamber according to the embodiments described herein.

[0009] Figure 2 For the purposes of the embodiments described herein, Figure 1 Perspective view of the liner assembly in the chamber.

[0010] Figure 3 For the purposes of the embodiments described herein, Figure 1 A perspective view of the liner assembly in the chamber with one or more flow proportional controllers.

[0011] Figure 4 Schematic diagram illustrating an embodiment of the invention that can be used Figure 1 The connection between one or more gas injection inserts in the chamber and one or more flow proportional controllers.

[0012] To aid understanding, common elements in the drawings have been labeled using the same component symbols whenever possible. It has been considered that elements disclosed in one embodiment may be beneficially incorporated into other embodiments without further description. Detailed Implementation

[0013] Embodiments of this disclosure generally relate to the use of one or more flow rate proportional controllers and one or more gas injection inserts in a semiconductor processing chamber. In one embodiment, the apparatus includes a first flow rate proportional controller, a second flow rate proportional controller, and a gas injection insert. The first flow rate proportional controller includes a first plurality of flow controllers, the second flow rate proportional controller includes a second plurality of flow controllers, and the gas injection insert includes a first portion and a second portion. The first portion of the gas injection insert includes a first plurality of channels, and the second portion of the gas injection insert includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second plurality of flow controllers to the first and second plurality of channels. Each of the one or more gas lines is connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

[0014] Figure 1 This is a schematic side cross-sectional view of a chamber 100 according to an embodiment described herein. The chamber 100 can be used to process one or more substrates, including depositing material onto the upper surface of a substrate 108. The chamber 100 may include a radiant heating lamp array 102 to heat the back side 104 of a substrate support 106 disposed within the chamber 100, and other components. In some embodiments, the radiant heating lamp array 102 may be disposed on an upper dome 128. The substrate support 106 may be a dish-shaped substrate support 106 as illustrated, or it may be an annular substrate support without a central opening, supporting the substrate from its edge to assist in exposing the substrate to the thermal radiation of the lamp 102. In some embodiments, the substrate support 106 may include multiple arms to support the substrate 108.

[0015] The substrate support 106 is located within the chamber 100, between the upper dome 128 and the lower dome 114. The upper dome 128, the lower dome 114, and the base ring 136 disposed between the upper dome 128 and the lower dome 114 generally define the internal region of the processing chamber 100. The substrate 108 can be brought into the chamber 100 and placed on the substrate support 106 through the loading port (not shown).

[0016] The substrate support 106 is shown in the elevated processing position, but can be vertically moved by an actuator (not shown) to a loading position below the processing position, allowing the lifting rod 105 to contact the lower dome 114 to lift the substrate 108 from the substrate support 106. Subsequently, a robot (not shown) can enter the chamber 100 through the loading port to engage and remove the substrate 108.

[0017] When in the processing position, the substrate support 106 divides the internal volume of the chamber 100 into a processing gas region 156 above the substrate support 106 and a purge gas region 158 below the substrate support 106. During processing, the substrate support 106 can be rotated by the central axis 132 to minimize the effects of thermal and spatial anomalies in the processing gas flow within the chamber 100, and thus ensure uniform processing of the substrate 108. Supported by the central axis 132, the substrate support 106 moves the substrate 108 along an upward and downward direction 134 during loading and unloading (and in some instances, during processing of the substrate 108). The substrate support 106 can be formed of silicon carbide or graphite coated with silicon carbide to absorb radiant energy from the lamp 102 and conduct the radiant energy to the substrate 108.

[0018] The central window portion of the upper dome 128 and the bottom of the lower dome 114 are made of an optically transparent material, such as quartz. One or more lamps (such as lamp array 102) may be positioned adjacent to and below the lower dome 114, arranged in a specified manner around the central axis 132, to independently control the temperature of each region of the substrate 108 as processing gas passes through, thereby assisting in the deposition of material onto the upper surface of the substrate 108. Although not discussed in detail herein, the deposited material may include silicon, silicon germanium, gallium arsenide, gallium nitride, or aluminum gallium nitride.

[0019] Lamp 102 may include bulb 141 to heat substrate 108 to a temperature range of approximately 200°C to approximately 1600°C. Each lamp 102 is coupled to a power distribution board (not shown), through which power is supplied to each lamp 102. The lamp 102 is placed within a lamp head 145, which can be cooled during (or after) processing, such as introducing cooling fluid into channels 149 located between the lamps 102. The lamp head 145 cools the lower dome 114, partly due to the close proximity of the lamp head 145 to the lower dome 114. The lamp head 145 also cools the lamp walls and the reflector walls (not shown) surrounding the lamp 102.

[0020] An annular shield 167 may optionally be disposed around the substrate support 106 and surrounded by a pad assembly 163. The annular shield 167 prevents or minimizes thermal / optical noise leakage from the lamp 102 to the device side 116 of the substrate 108, while providing a preheating zone for the process gases. The annular shield 167 may be made of CVD SiC, SiC-coated sintered graphite, grown SiC, opaque quartz, coated quartz, or any similar suitable material that can withstand the chemical decomposition by the process gases and purifying gases.

[0021] The liner assembly 163 is sized to be grooved and stacked within or surrounded by the inner circumference of the base ring 136. The liner assembly 163 shields the processing volume (i.e., the processing gas region 156 and the purified gas region 158) from the influence of the metal walls of the processing chamber 100. The metal walls can react with precursors and generate contaminants within the processing volume. Although the liner assembly 163 is illustrated as a single entity, it may comprise one or more liners with different configurations.

[0022] Since the back side of the substrate 108 is heated from the substrate support 106, temperature measurement / control can be performed on the substrate support using an optical pyrometer 118. This temperature measurement performed by the optical pyrometer 118 can also be performed on the substrate device side 116 with an unknown emissivity, because heating the front side 110 of the substrate in this manner is independent of emissivity. Therefore, the optical pyrometer 118 can only sense radiation conducted from the heated substrate 108 through the substrate support 106, while minimizing background radiation directly reaching the optical pyrometer 118 from the lamp 102.

[0023] Optionally, a reflector 122 may be placed on the outside of the upper dome 128 to reflect infrared light emitted from the substrate 108 back onto the substrate 108. A clamping ring 130 may be used to hold the reflector 122 to the upper dome 128. The reflector 122 may be made of a metal such as aluminum or stainless steel. The efficiency of reflection can be improved by coating the reflector area with a highly reflective coating (such as gold). The reflector 122 may have one or more channels 126 connected to a cooling source (not shown). Each channel 126 is connected to a channel (not shown) formed on one side of the reflector 122. The channel is configured to carry a fluid flow (such as water) and may extend horizontally along the side of the reflector 122 by any pattern covering part or all of the surface of the reflector 122 to cool the reflector 122.

[0024] Process gas supplied from process gas supply sources 177 and 179 is introduced into process gas region 156 via gas injection insert 174, which is located in the sidewall of base ring 136. Before entering gas injection insert 174, the process gas may flow into one or more flow rate proportional controllers 171 and 172. Gas injection insert 174 is configured to guide the process gas in a generally radially inward direction. One or more flow rate proportional controllers 171 and 172, along with gas injection insert 174, tune the flow rate and flow rate ratio of the process gas, thereby enabling adjustment of the radial airflow rate profile in crossflow chamber 100 while maintaining a constant total airflow and gas partial pressure at the injection point. Furthermore, one or more flow rate proportional controllers 171 and 172, along with gas injection insert 174, provide tuning for alloy composition, doping concentration, or selectivity. Figure 3 and Figure 4 One or more flow proportional controllers 171, 172 and a gas injection insert 174 are described in detail. During the thin film formation process, a substrate support 106 may be located at the processing position (adjacent to the gas injection insert 174 and at approximately the same height as the gas injection insert 174), allowing the process gas to flow laminarly across the upper surface of the substrate 108 along a flow path 173. The process gas exits the process gas region 156 via a gas outlet 178 (along a flow path 175), located on the side of the chamber 100 opposite the gas injection insert 174. A vacuum pump 180 coupled to the gas outlet 178 may assist in removing the process gas via the gas outlet 178.

[0025] Purified gas can be supplied from a purified gas source 162 to a purified gas region 158 via an optional purified gas inlet 164 (or via a gas injection insert 174), the purified gas inlet 164 being formed in the sidewall of the base ring 136. The purified gas inlet 164 is positioned below the height of the gas injection insert 174. During the thin film formation process, the substrate support 106 can be positioned such that the purified gas flows laminarly along a flow path 165 across the back side 104 of the substrate support 106. Without being bound by any particular theory, it is believed that the flow of the purified gas prevents (or substantially avoids) the flow of process gas into the purified gas region 158, or reduces the diffusion of process gas into the purified gas region 158 (i.e., the region below the substrate support 106). The purified gas exits the purified gas region 158 along a flow path 166 and is exhausted from the chamber 100 via a gas outlet 178 located on the side of the chamber 100 opposite to the purified gas inlet 164.

[0026] Similarly, during the purification process, the substrate support 106 may be positioned in an elevated position to allow the purification gas to flow laterally across the back side 104 of the substrate support 106. Those skilled in the art will understand that the process gas inlet, purification gas inlet, and gas inlet are illustrated for illustrative purposes, as the position, size, or number of gas inlets or outlets, etc., can be adjusted to further assist in the uniform deposition of material on the substrate 108.

[0027] Figure 2 For alternatives to the embodiments described herein Figure 1 A perspective view of the liner assembly 163. The liner assembly 200 is configured to line the processing area within the processing chamber, such as... Figure 1The chamber 100. The gasket assembly 200 generally provides a gas inlet port 202, a gas outlet port 204, and a loading port 206. The gasket assembly 200 can be slotted onto a base ring (e.g., ...) disposed in the chamber. Figure 1 The liner assembly 200 may be integrally formed or may comprise multiple components that can be assembled together. In one example, the liner assembly 200 comprises multiple modular components (or liner) that are adapted to be replaced individually or collaboratively to provide the additional flexibility and cost savings of a modular design. The modular design of the liner assembly 200 enables easy operability and enhanced functionality (i.e., changing different injectors). In one embodiment, the liner assembly 200 comprises at least an upper liner 208 and a lower liner 210, which are vertically stacked. The venting liner 212 may be incorporated from a portion of the upper liner 208 to improve positioning stability.

[0028] The upper liner 208 and the vent liner 212 may have cutouts to receive the injector liner 214. The injector liner 214 is coupled to one or more gas injection inserts 218. The one or more gas injection inserts 218 may be... Figure 1 The illustrated gas injection insert 174. In one embodiment, a gas injection insert 218 includes a first portion 222 and a second portion 224, the first portion 222 having a plurality of channels 220 and the second portion 224 having a plurality of channels 226. In one embodiment, the first portion 222 and the second portion 224 of the gas injection insert 218 are two separate gas injection inserts 218. One or more processing gases are introduced into the chamber via channels 220, 226.

[0029] Figure 3 For the purposes of the embodiments described herein, Figure 1 A perspective view of the liner assembly 200 in chamber 100 and one or more flow proportional controllers 304, 306. The one or more flow proportional controllers 304, 306 may be... Figure 1 The diagram shows one or more flow proportional controllers 171, 172. For example... Figure 3 The icon represents the gasket assembly 200, which includes an injector gasket 214 and one or more gas injection inserts 218 coupled to the injector gasket 214. One or more gas injection inserts 218 are coupled to a manifold 302. The manifold 302 includes a first surface 303 and a second surface 305 relative to the first surface 303. A first flow proportional controller 304 is coupled to the first surface 303 of the manifold 302, and a second flow controller 306 is coupled to the second surface 305 of the manifold 302. A plurality of tubes 308 are disposed within the gas injection inserts 218, each tube 308 potentially located within a corresponding channel 220, 226 (see [link to documentation]). Figure 2 Multiple tubes 308 can be connected to manifold 302, and the process gas can flow through manifold 302 into chamber 100 via the multiple tubes 308.

[0030] Figure 4 Schematic diagram illustrating an embodiment of the invention that can be used Figure 1 Connection between one or more gas injection inserts 218 in chamber 100 and one or more flow proportional controllers 304, 306. For example... Figure 4 The diagram shows a gas injection insert 218 comprising a first portion 222 and a second portion 224. In one embodiment, the first portion 222 and the second portion 224 are independent gas injection inserts. Each portion 222, 224 includes a plurality of channels 220, 226 formed therein, and the number of channels 220 in the first portion 222 is equal to the number of channels 226 in the second portion 226. In one embodiment, each portion 222, 224 includes nine channels 220a-220i or 226a-226i, such as... Figure 4 The illustration shows that, in another embodiment, each portion 222, 224 contains 11 channels. The first portion 222 and the second portion 224 may be mirror images of each other with respect to the central axis 401. The positions of channels 220a-220i and channels 226a-226i in the first portion 222 may be symmetrical with respect to the central axis 401. For example, the position of the inner channel 220i in the first portion 222 and the position of the inner channel 226i in the second portion 224 are symmetrical with respect to the central axis 401. Figure 4 As shown in the figure, inner channel 220i is adjacent to inner channel 226i.

[0031] One or more flow proportional controllers 304, 306 are connected to the gas injection insert 218 via multiple gas lines. The gas lines can be any suitable wire, such as a conduit or tube, to allow gas or fluid to flow through them. In one embodiment, two flow proportional controllers 304, 306 are connected to the gas injection insert 218 via multiple gas lines, such as... Figure 4The diagram illustrates that each flow proportional controller 304, 306 includes multiple flow controllers, such as mass flow controllers (MFCs). In one embodiment, flow proportional controller 304 includes five flow controllers 402, 404, 406, 408, 410, and flow proportional controller 306 includes five flow controllers 412, 414, 416, 418, 420. The number of flow controllers in each flow proportional controller 304, 306 may be more or less than five. In one embodiment, 22 channels are formed in the gas injection insert 218 (11 channels in each of the first and second portions 222, 224), and each flow proportional controller 304, 306 has six flow controllers.

[0032] Flow controllers 402, 404, 406, 408, 410, 412, 414, 416, 418, and 420 are connected via multiple gas lines to channels 220a-220i, 226a-226i (or pipes located within the channels, such as...). Figure 3 (See tube 308 in the diagram). The inner channel 220i of the first section 222 is connected to the flow controller 410 in the flow proportional controller 304 via a gas line 422, and the inner channel 226i of the second section 224 is connected to the flow controller 412 in the flow proportional controller 306 via a gas line 424. Each of the remaining flow controllers 402, 404, 406, and 408 in the flow proportional controller 304 is connected to two channels, one in the first section 222 of the gas injection insert 218 and the other in the second section 224 of the gas injection insert 218. Each of the remaining flow controllers 414, 416, 418, and 420 in the flow proportional controller 306 is connected to two channels, one in the first section 222 of the gas injection insert 218 and the other in the second section 224 of the gas injection insert 218. No channel in the gas injection insert 218 is connected to more than one flow controller.

[0033] For example, flow controller 402 in flow proportional controller 304 is connected to a first gas line 426, which is divided into two gas lines 426a and 426b. Gas line 426a is connected to channel 220a in the first part 222, and gas line 426b is connected to channel 226b in the second part 224. Flow controller 404 in flow proportional controller 304 is connected to a second gas line 428, which is divided into two gas lines 428a and 428b. Gas line 428a is connected to channel 220c in the first part 222, and gas line 428b is connected to channel 226d in the second part 224. Flow controller 406 in flow proportional controller 304 is connected to a third gas line 430, which is divided into two gas lines 430a and 430b. Gas line 430a is connected to channel 220e in the first part 222, and gas line 430b is connected to channel 226f in the second part 224. Flow controller 408 in flow proportional controller 304 is connected to the fourth gas line 432, which is divided into two gas lines 432a and 432b. Gas line 432a is connected to channel 220g in the first part 222, and gas line 432b is connected to channel 226h in the second part 224. Flow controller 410 in flow proportional controller 304 is connected to the fifth gas line 422, which is connected to the inner channel 220i in the first part 222. Flow controller 412 in flow proportional controller 306 is connected to the sixth gas line 424, which is connected to the inner channel 226i in the second part 224. Flow controller 414 in flow proportional controller 306 is connected to the seventh gas line 434, which is divided into two gas lines 434a and 434b. Gas line 434a is connected to channel 220h in the first part 222, and gas line 434b is connected to channel 226g in the second part 224. Flow controller 416 in flow proportional controller 306 is connected to the eighth gas line 436, which is divided into two gas lines 436a and 436b. Gas line 436a is connected to channel 220f in the first part 222, and gas line 436b is connected to channel 226e in the second part 224. Flow controller 418 in flow proportional controller 306 is connected to the ninth gas line 438, which is divided into two gas lines 438a and 438b. Gas line 438a is connected to channel 220d in the first part 222, and gas line 438b is connected to channel 226c in the second part 224. Flow controller 420 in flow proportional controller 306 is connected to the tenth gas line 440, which is divided into two gas lines 440a and 440b.Gas line 440a is connected to channel 220b in the first part 222, and gas line 440b is connected to channel 226a in the second part 224.

[0034] The flow proportional controller 304 is connected to the first gas source (such as gas source 177). Figure 1 The flow rate proportional controller 306 is connected to a second gas source (such as gas source 179). Figure 1 A first gas source supplies a first gas (or gas mixture) A to flow controllers 402, 404, 406, 408, and 410 of flow proportional controller 304, and a second gas source supplies a second gas (or gas mixture) B to flow controllers 412, 414, 416, 418, and 420 of flow proportional controller 306. Gas lines 426, 428, 430, 432, 422, 424, 434, 436, 438, and 440 guide the first gas A and the second gas B to channels 220a-220i and 226a-226i (or pipes placed within the channels). The first gas A and the second gas B flow alternately through channels 220a-220i and 226a-226i. For example, the first gas A flows through channel 220a in the first section 222, and channel 220a is the outermost channel. The second gas B flows through channel 220b (adjacent to channel 220a) in the first section 222. In other words, the gas flowing through the adjacent channel is supplied by a different gas source, or different gas flows through the adjacent channel. Since the two flow controllers are positioned on opposite surfaces of the manifold 302, the A and B gas flows can be alternately interleaved into channel 220.

[0035] One or more flow proportional controllers 304, 306, one or more gas injection inserts 218, and multiple gas lines (e.g., connecting the flow controllers 304, 306 to the gas injection inserts 218) Figure 4 (Illustrated), it is possible to use two different gases or gas mixtures (A and B) and use alternating injection points ABABABABA=BABABABAB (the equal sign "=" indicates the central axis, such as...) Figure 4(Central axis 401 is shown in the diagram). All injection points for a gas or gas mixture are grouped into pairs, except for inner injection points (such as inner channels 220i or 226i) which are not paired with another channel. By dividing the injection points into two groups (A and B), two independent gas flow distributions can be used to tune the alloy composition (e.g., silicon to germanium, silicon to carbon, germanium to tin), resistivity / doping concentration, or selectivity (deposition precursor vs. etching precursor). For example, in one embodiment, the first process gas A is a silicon-containing precursor, and the second process gas B is a germanium-containing precursor. The silicon and germanium alloy composition in the deposited silicon-germanium layer can be tuned by adjusting flow controllers 402, 404, 406, 408, 410 relative to flow controllers 412, 414, 416, 418, 420. In another embodiment, the first process gas A is a silicon-containing precursor, and the second process gas B is a dopant (such as an arsenic dopant). The doping concentration of the deposited silicon doped layer can be tuned by adjusting flow controllers 402, 404, 406, 408, and 410 relative to flow controllers 412, 414, 416, 418, and 420. Furthermore, the thickness uniformity of the deposited layer is improved. Using a flow proportional controller that includes multiple flow controllers allows for easy tuning of the flow rate in each individual flow controller.

[0036] Although the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, the scope of which is defined by the following claims.

Claims

1. An apparatus for semiconductor processing, comprising: A first flow proportional controller, the first flow proportional controller comprising a first plurality of flow controllers, the first plurality of flow controllers being configured to receive a first gas through a first inlet; A second flow proportional controller is configured to receive a second gas through a second inlet different from the first inlet; A gas injection insert comprising a first portion and a second portion, wherein the first portion comprises a first plurality of channels and the second portion comprises a second plurality of channels; as well as Multiple gas lines connect the first and second flow rate proportional controllers to the first and second multiple channels, wherein: The first flow controller of the first plurality of flow controllers is connected to a first gas line of a first subset of the plurality of gas lines and a channel of the first plurality of channels in order to provide the first gas; as well as The second flow controller of the first plurality of flow controllers is connected to the second gas line of the first subset of the plurality of gas lines, one channel of the first plurality of channels, and one channel of the second plurality of channels to provide the first gas.

2. The apparatus of claim 1, wherein: The second flow proportional controller is isolated from the first inlet fluid upstream of the second flow proportional controller, and the first flow proportional controller is isolated from the second inlet fluid upstream of the first flow proportional controller; as well as A third flow controller of the first plurality of flow controllers is connected to a third gas line of the first subset of the plurality of gas lines, a channel of the first plurality of channels, and a channel of the second plurality of channels to provide the first gas.

3. The apparatus of claim 2, wherein the first plurality of flow controllers comprises three flow controllers, and wherein the second flow ratio controller comprises a second plurality of flow controllers.

4. The apparatus of claim 3, wherein each of the first plurality of flow controllers and the second plurality of flow controllers comprises less than 5 flow controllers.

5. The apparatus of claim 1, further comprising a gasket assembly configured to receive the gas injection insert, wherein the gasket assembly comprises: Upper padding; Underliner Exhaust gasket; as well as Injector liner.

6. The apparatus of claim 5, wherein the injector liner is coupled to the gas injection insert.

7. An apparatus for semiconductor processing, comprising: A first flow proportional controller, comprising a first plurality of flow controllers, the first flow proportional controller being configured to receive a first gas through a first inlet; A second flow proportional controller is configured to receive a second gas through a second inlet different from the first inlet; A gas injection insert comprising a first portion and a second portion, wherein the first portion includes a first plurality of channels and the second portion includes a second plurality of channels; Multiple gas lines connect the first and second flow rate proportional controllers to the first and second multiple channels, wherein: The first flow controller of the first plurality of flow controllers is connected to a first gas line of a first subset of the plurality of gas lines and a channel of the first plurality of channels in order to provide the first gas; A second flow controller of the first plurality of flow controllers is connected to a second gas line of the first subset of the plurality of gas lines, a channel of the first plurality of channels, and a channel of the second plurality of channels to provide the first gas; and A third flow controller of the first plurality of flow controllers is connected to a third gas line of the first subset of the plurality of gas lines, a channel of the first plurality of channels, and a channel of the second plurality of channels to provide the first gas; and The gas lines of a second subset of the plurality of gas lines are connected between the second flow proportional controller and two additional channels to provide the second gas independent of the first gas, wherein one of the two additional channels comes from the first plurality of channels and the other of the two additional channels comes from the second plurality of channels.

8. The apparatus of claim 7, wherein each channel of the gas injection insert is connected to a controller.

9. The apparatus of claim 7, further comprising a liner assembly configured to receive the gas injection insert.

10. The apparatus of claim 9, wherein the gasket assembly comprises: Upper padding; Underlay; Exhaust liners; and Injector liner.

11. The apparatus of claim 10, wherein the injector liner is coupled to the gas injection insert.

12. An apparatus for semiconductor processing, comprising: The chamber contains: Top dome; Lower dome; A base ring, wherein the base ring is disposed between the upper dome and the lower dome; and A gas injection insert located within the base ring, wherein the gas injection insert comprises a first portion and a second portion, wherein the first portion comprises a first plurality of channels and the second portion comprises a second plurality of channels, the first plurality of channels and the second plurality of channels being configured to asymmetrically introduce gas flow relative to a central axis; A first flow proportional controller, configured to receive a first gas through a first inlet, the first flow proportional controller comprising a first plurality of flow controllers; A second flow proportional controller is configured to receive a second gas through a second inlet different from the first inlet; as well as Multiple gas lines connect the first and second flow rate proportional controllers to the first and second multiple channels, wherein: The first flow controller of the first plurality of flow controllers is connected to a first gas line of a first subset of the plurality of gas lines and a channel of the first plurality of channels in order to provide the first gas; The second flow controller of the first plurality of flow controllers is connected to the second gas line of the first subset of the plurality of gas lines, one channel of the first plurality of channels, and one channel of the second plurality of channels to provide the first gas.

13. The apparatus of claim 12, further comprising: A first branch conduit coupled to a first gas source, the first branch conduit being disposed between the first gas source and the first flow proportional controller; A second branch conduit coupled to a second gas source, the second branch conduit being disposed between the second gas source and the second flow proportional controller, and the second branch conduit being fluidly isolated from the first flow proportional controller and the first branch conduit upstream of the second flow proportional controller; as well as A third flow controller of the first plurality of flow controllers is connected to a third gas line of the first subset of the plurality of gas lines, a channel of the first plurality of channels, and a channel of the second plurality of channels to provide the first gas.

14. The apparatus of claim 13, further comprising a gasket assembly configured to receive the gas injection insert, wherein the gasket assembly comprises: Upper padding; Underliner Exhaust gasket; as well as Injector liner.

15. The apparatus of claim 14, wherein the injector liner is coupled to the gas injection insert.

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