A UVPT-LED integrated device for optical interactive display and its preparation method

Abstract

The present invention relates to an integrated device of UVPT (BJT)-LED for optical interactive display, comprising a P-type gallium nitride layer, a quantum well layer, a first N-type gallium nitride layer, a second P-type gallium nitride layer, a third N-type gallium nitride layer, a buffer layer, a substrate, an anode metal contact layer, a collector metal contact layer, a long-afterglow material layer, and a magnesium oxide anti-reflection film layer; the substrate, buffer layer, third N-type gallium nitride layer, second P-type gallium nitride layer, and first N-type gallium nitride layer are arranged in sequence from bottom to top; the quantum well layer is arranged on the first N-type gallium nitride layer; the anode metal contact is arranged on the P-type gallium nitride layer; the annular long-afterglow material layer surrounds the anode metal contact layer; the magnesium oxide anti-reflection film layer surrounds the first N-type gallium nitride layer; and the collector metal contact layer is arranged on the buffer layer. The present invention realizes a display panel with dual sensing and display functions that can provide real-time communication, enabling the device to sense external signals and display information simultaneously.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to an integrated device of UVPT-LED for optical interactive display and a preparation method thereof. Background Art

[0002] Gallium nitride (GaN) is widely used in the research and development of high-performance optoelectronic devices due to its wide bandgap, high electron mobility, and excellent physical and chemical stability. GaN-based light-emitting and light-detecting devices cover the entire wavelength range from ultraviolet to visible light and play a vital role in the transmitter and receiver of wireless optical communication systems. This enables more compact and efficient transceiver modules for intelligent wireless terminals, making the integration of transmitters and receivers on a single chip a desirable approach.

[0003] In the fabrication process of gallium nitride (GaN)-based power devices, etching technology, as a fundamental semiconductor manufacturing process, plays a crucial role in meeting specific mask pattern design requirements. Etching is primarily categorized as wet etching or dry etching. Due to GaN's high binding energy and wide bandgap, it is resistant to chemical acid and alkali solutions at room temperature. Chemical etching of GaN suffers from less than ideal etching rates and anisotropy. Therefore, dry etching is often used in GaN-based device fabrication. Inductively coupled plasma (ICP) etching is widely adopted due to its fast etching rates, high selectivity, and good anisotropy. However, ICP dry etching involves complex physical and chemical processes, and various process parameters, such as ICP power, RF power, gas, and pressure, have a significant impact on the etching results. Since ions bombard the surface during etching, the etching process inevitably damages the material lattice and introduces defects, among other unfavorable factors. These damages can degrade the optical and electrical properties of the device, such as reducing the light output power and luminous efficiency of LED devices. To reduce damage and enhance device performance, a certain etching rate must be maintained, which places strict requirements on the adjustment of various parameters in the etching process. Summary of the Invention

[0004] In view of this, an object of the present invention is to provide an integrated device of UVPT-LED for optical interactive display and a preparation method thereof, aiming to solve the above-mentioned problems.

[0005] To achieve the above object, the present invention adopts the following technical solutions:

[0006] An integrated device of UVPT-LED for optical interactive display includes a P-type gallium nitride layer, a quantum well layer, a first N-type gallium nitride layer, a second P-type gallium nitride layer, a third N-type gallium nitride layer, a buffer layer, a substrate, an anode metal contact layer, a collector metal contact layer, a long-afterglow material layer, and a magnesium oxide anti-reflection film layer; the substrate, buffer layer, third N-type gallium nitride layer, second P-type gallium nitride layer, and first N-type gallium nitride layer are arranged in sequence from bottom to top; the quantum well layer is arranged on the first N-type gallium nitride layer; the anode metal contact is arranged on the P-type gallium nitride layer; the annular long-afterglow material layer surrounds the anode metal contact layer; the magnesium oxide anti-reflection film layer surrounds the first N-type gallium nitride layer; and the collector metal contact layer is arranged on the buffer layer.

[0007] Furthermore, it also includes an emitter metal contact layer, which is arranged above the third N-type gallium nitride layer, and the cathode metal contact layer and the collector metal contact layer are interconnected through metal wires.

[0008] Furthermore, it also includes an emitter metal contact layer, which is arranged above the third N-type gallium nitride layer; and a magnesium metal thin film layer is arranged on the first N-type gallium nitride layer and the third N-type gallium nitride layer.

[0009] Furthermore, it also includes an emitter metal contact layer, which is arranged below the substrate.

[0010] Furthermore, the material of the long afterglow material layer is ZnS:Cu.

[0011] Furthermore, the thickness of the first N-type gallium nitride layer is between 10 nm and 200 nm; the thickness of the second P-type gallium nitride layer should be between 50 nm and 200 nm; and the thickness of the third N-type gallium nitride layer should be between 50 nm and 200 nm.

[0012] Furthermore, the materials used for the anode metal contact layer, the cathode metal contact layer, the emitter metal contact layer and the collector metal contact layer include molybdenum, tungsten, titanium, nickel, gold, silver, cadmium and platinum.

[0013] A method for preparing an integrated device of UVPT-LED for optical interactive display, comprising the following steps:

[0014] S11: depositing a buffer layer on the substrate surface, sequentially forming a third N-type gallium nitride layer, a second P-type gallium nitride layer, and a first N-type gallium nitride layer on the buffer layer using metal organic chemical vapor deposition; and depositing a dielectric layer on the first N-type gallium nitride layer using physical vapor deposition;

[0015] S12: using ICP dry etching to remove part of the dielectric layer;

[0016] S13: forming a quantum well layer and a P-type gallium nitride layer in sequence on the first N-type gallium nitride layer 1 by metal organic chemical vapor deposition;

[0017] S14: removing the dielectric layer by wet etching;

[0018] S15: ICP etching removes part of the P-type gallium nitride layer and the quantum well, exposing part of the first N-type gallium nitride layer and the third N-type gallium nitride layer;

[0019] S16: using electron beam evaporation or sputtering technology, depositing an anode metal contact layer on the P-type gallium nitride layer; depositing a cathode metal contact layer on the first N-type gallium nitride layer; depositing a collector metal contact layer on the third N-type gallium nitride layer, and depositing an emitter metal contact layer on the second N-type gallium nitride layer;

[0020] S17: depositing a dielectric layer on the surface exposed after etching by physical vapor deposition in step S16;

[0021] S18: sputtering a Ti / Al layer between the cathode metal contact layer and the collector metal contact layer to form an interconnection between the cathode and the collector;

[0022] S19: using a dimethylsiloxane stamp transfer method, transferring a long afterglow material layer onto the P-type gallium nitride layer 101 surrounding the anode metal contact layer;

[0023] S110: depositing a magnesium oxide antireflection film on the third gallium nitride layer by using a vacuum evaporation method or a sputtering technique.

[0024] A method for preparing an integrated device of UVPT-LED for optical interactive display, comprising the following steps:

[0025] S21: depositing a buffer layer on the substrate surface, sequentially forming a third N-type gallium nitride layer, a second P-type gallium nitride layer, and a first N-type gallium nitride layer on the buffer layer using metal organic chemical vapor deposition, and depositing a dielectric layer on the first N-type gallium nitride layer using physical vapor deposition;

[0026] S22: removing part of the dielectric layer by ICP dry etching;

[0027] S23: forming a quantum well layer and a P-type gallium nitride layer in sequence on the first N-type gallium nitride layer by metal organic chemical vapor deposition;

[0028] S24: removing the dielectric layer by wet etching;

[0029] S25: ICP etching removes part of the P-type gallium nitride layer and the quantum well, exposing part of the first N-type gallium nitride layer and the third N-type gallium nitride layer;

[0030] S26: Electron beam evaporation or sputtering technology is used to deposit a Mg metal thin film layer on the exposed area after S25;

[0031] S27: Annealing the wafer obtained after step S26;

[0032] S28: Soaking the wafer obtained after step S27 in dilute HCl to remove residual Mg;

[0033] S29: using electron beam evaporation or sputtering technology, depositing an anode metal contact layer on the P-type gallium nitride layer; depositing a cathode metal contact layer on the first N-type gallium nitride layer; depositing a collector metal contact layer on the third N-type gallium nitride layer, and depositing an emitter metal contact layer on the second N-type gallium nitride layer;

[0034] S210: depositing a dielectric layer on the surface of the magnesium after step S29 by physical vapor deposition;

[0035] S211: a Ti / Al metal layer is sputtered between the cathode metal contact layer and the collector metal contact layer;

[0036] S212: Using a dimethylsiloxane stamp transfer method, a long afterglow material layer is transferred onto the P-type gallium nitride layer surrounding the anode metal contact layer;

[0037] S213: depositing a magnesium oxide antireflection film on the first gallium nitride layer by using a vacuum evaporation method or a sputtering technique.

[0038] A method for preparing an integrated device of UVPT-LED for optical interactive display, comprising the following steps:

[0039] S31: depositing a buffer layer on the substrate surface, sequentially forming a third N-type gallium nitride layer, a second P-type gallium nitride layer, and a first N-type gallium nitride layer on the buffer layer using metal organic chemical vapor deposition, and depositing a dielectric layer on the first N-type gallium nitride layer using physical vapor deposition;

[0040] S32: removing part of the dielectric layer by ICP dry etching;

[0041] S33: forming a quantum well layer and a P-type gallium nitride layer in sequence on the first N-type gallium nitride layer by metal organic compound chemical vapor deposition;

[0042] S34: removing the dielectric layer by wet etching;

[0043] S35: Using electron beam evaporation or sputtering technology, deposit an emitter metal contact layer under the substrate; deposit an anode metal contact layer on the P-type gallium nitride layer;

[0044] S36: Using a dimethylsiloxane stamp transfer method, a long afterglow material layer is transferred onto the P-type gallium nitride layer surrounding the anode metal contact layer;

[0045] S37: Depositing a magnesium oxide antireflection film on the first gallium nitride layer by using a vacuum evaporation method or a sputtering technique.

[0046] Compared with the prior art, the present invention has the following beneficial effects:

[0047] 1. The present invention deposits a magnesium metal film on the exposed surface of the wafer to reduce etching damage to the wafer and lower interconnection resistance;

[0048] 2. The present invention can realize a dual-function optical sensing / display device, enabling easy interaction between users and devices, and between devices, and meeting the multi-layer functionalization of a single device;

[0049] 3. The present invention uses a silicon dioxide dielectric layer as a mask layer and adopts metal organic chemical vapor deposition to directly epitaxially grow the functional layer of the LED, thereby avoiding the damage to the device surface caused by the ICP dry etching process in the traditional device preparation process and the resulting degradation of the device's photoelectric performance, and simplifying the device's process flow. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 This is a conceptual diagram of an array of integrated devices of UVPT-LEDs for optical interactive display provided by the present invention;

[0051] In the figure, 1 is a long afterglow material layer, which is used to retain the light emitted by the uLED so that the display screen can still display for a certain period of time when the ultraviolet light stops incident; 2 is the uLED part of the UVPT-uLED integrated device, which is used for the display part; 3 is the UVPT part of the UVPT-uLED integrated device, which is used to absorb ultraviolet light and drive the uLED to emit light; 4 is an ultraviolet light pen (wavelength is 200nm-365nm), which is used to provide a light source for the UVPT; for the sake of accuracy and convenience of description, the array concept diagram of the UVPT-LED integrated device is replaced by four pixel points.

[0052] Figure 2 This is a schematic diagram of the final effect of Example 1 of the present invention;

[0053] Figure 3-10 Schematic diagram of the preparation process of Example 1 of the present invention;

[0054] In the figure, 101-P-type gallium nitride layer, 102-quantum well layer, 103-first N-type gallium nitride layer, 104-second P-type gallium nitride layer, 105-third N-type gallium nitride layer, 106-buffer layer, 107-substrate, 108-anode metal contact layer, 109-cathode metal contact layer, 110-collector metal contact layer, 111-emitter metal contact layer, 112-dielectric layer, 113-metal lead, 114-long afterglow material layer, and 115-magnesium oxide anti-reflection film.

[0055] Figure 11 Schematic diagram of the final effect of Example 2 of the present invention, wherein the second integrated device of UVPT-LED for optical interactive display is based on the first integrated device, and a layer of magnesium metal film is deposited on the etched area;

[0056] Figure 12-21 Schematic diagram of the preparation process of Example 2 of the present invention;

[0057] In the figure, 201-P-type gallium nitride layer, 202-quantum well layer, 203-first N-type gallium nitride layer, 204-second P-type gallium nitride layer, 205-third N-type gallium nitride layer, 206-buffer layer, 207-substrate, 208-magnesium metal film layer, 209-anode metal contact layer, 210-cathode metal contact layer, 211-emitter metal contact layer, 212-collector metal contact layer, 213-dielectric layer, 214-metal lead, 215-long afterglow material layer, 216-magnesium oxide anti-reflection film.

[0058] Figure 22 Schematic diagram of the final effect of Example 3 of the present invention;

[0059] Figure 23-28 Schematic diagram of the preparation process of Example 3 of the present invention;

[0060] In the figure: 301-P-type gallium nitride layer, 302-quantum well layer, 303-first N-type gallium nitride layer, 304-second P-type gallium nitride layer, 305-third N-type gallium nitride layer, 306-buffer layer, 307-substrate, 308-anode metal contact layer, 309-collector metal contact layer, 310-long afterglow material layer, 311-antireflection film layer. DETAILED DESCRIPTION

[0061] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0062] Please refer to Figure 1 The present invention provides an intelligent display screen based on an integrated device of UVPT-LED with optical interactive display. In order to make the intelligent display screen more attractive, the display screen is simplified into a device with four pixels, including:

[0063] The long afterglow material layer is used to retain the light emitted by the uLED, so that the display can still display for a certain period of time after the ultraviolet light stops incident;

[0064] The uLED part of the UVPT-uLED integrated device is used for the display part;

[0065] The UVPT part of the UVPT-uLED integrated device is used to absorb ultraviolet light and drive the uLED to emit light; the ultraviolet light pen (wavelength of 200nm-365nm) is used to provide light source for the UVPT.

[0066] In this embodiment, the properties of GaN material dictate that the GaN UVPT can only absorb ultraviolet light between 200nm and 365nm. Therefore, the wavelength of the UV pen must fall within this range. During normal operation, the UVPT-uLED is in a reverse-biased state. The movement of photogenerated carriers generates a photocurrent flowing from the N-side to the P-side. This photocurrent is then amplified in the phototransistor. The movement of photogenerated carriers indicates that electrons move from the space charge region to the collector region. From there, holes move to the base region. As photogenerated carriers accumulate, the potential of the base region gradually increases relative to that of the emitter region. When the emitter junction's turn-on voltage is reached, electrons from the emitter region are injected into the base region in large quantities. A small portion of these electrons are absorbed by holes in the base region, while the majority pass through the base region and reach the collector region. The phototransistor's collector and the uLED's N-side share the same epitaxial layer, effectively increasing the number of carriers in the N-side. Under the action of the P-side voltage, carriers from the P and N-side regions move to the multi-quantum wells for combined emission. That is, when the UVPT receives external ultraviolet light, it will quickly respond with an electric current, causing the uLED to emit light, thereby achieving the purpose of display.

[0067] When a light pen illuminates a display's pixel array, the signal is spatially sensed and analyzed by the pixel array, resulting in a "write" action on the display. For illustration, let's simplify the display screen into a device with four pixels. When the UV pen illuminates a pixel, it emits light. Even when the UV pen is moved to illuminate other areas, the pixel continues to glow due to the long-lasting glow material layer, achieving a memory function. Imagine writing on the display with a UV pen. The written area—the pixels hit by the UV light—will emit light, displaying the written word on the screen, thus achieving the "write" function.

[0068] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is described in detail below with reference to the accompanying drawings.

[0069] Example 1:

[0070] like Figure 2As shown, this embodiment provides an integrated device of UVPT-LED for optical interactive display, including a P-type gallium nitride layer 101, a quantum well layer 102, a first N-type gallium nitride layer 103, a second P-type gallium nitride layer 104, a third N-type gallium nitride layer 105, a buffer layer 106, a substrate 107, an anode metal contact layer 108, a cathode metal contact layer 109, a collector metal contact layer 110, an emitter metal contact layer 111, a dielectric layer 112, a metal lead 113, a long afterglow material layer 114, and an anti-reflection film layer 115;

[0071] like Figure 3-10 As shown, this embodiment also provides a method for preparing the above-mentioned UVPT-LED integrated device for optical interactive display, comprising the following steps:

[0072] S11: Depositing a buffer layer 106 on the surface of the substrate 7, sequentially forming a third N-type gallium nitride layer 105, a second P-type gallium nitride layer 104, and a first N-type gallium nitride layer 103 on the buffer layer 106 by metal organic chemical vapor deposition (MOCVD), and depositing a dielectric layer on the first N-type gallium nitride layer 103 by physical vapor deposition;

[0073] S12: using ICP dry etching to remove part of the dielectric layer;

[0074] S13: forming a quantum well layer 102 and a P-type gallium nitride layer 101 on the first N-type gallium nitride layer 103 by metal organic chemical vapor deposition;

[0075] S14: removing the dielectric layer by wet etching;

[0076] S15: ICP etching removes a portion of the P-type gallium nitride layer 101 and the quantum well 102 to expose a portion of the first N-type gallium nitride layer 103 and the third N-type gallium nitride layer 105;

[0077] S16: Using electron beam evaporation or sputtering technology, deposit an anode metal contact layer 108 on the P-type gallium nitride layer 101; deposit a cathode metal contact layer 109 on the first N-type gallium nitride layer 103; deposit a collector metal contact layer 109 on the third N-type gallium nitride layer 105; and deposit an emitter metal contact layer 111 on the second N-type gallium nitride layer 103;

[0078] S17: depositing a dielectric layer on the exposed surface after etching by physical vapor deposition in step S16;

[0079] S18: Ti / Al is sputtered between the cathode metal contact layer 109 and the collector metal contact layer 110 to form an interconnection between the cathode and the collector;

[0080] S19: Using a dimethylsiloxane (PDMS) stamp transfer method, a long afterglow material layer 114 is transferred onto the P-type gallium nitride layer 101 around the anode metal contact layer 108;

[0081] S110 : depositing a magnesium oxide antireflection film 115 on the third gallium nitride layer 104 by vacuum evaporation or sputtering technology.

[0082] Preferably, in this embodiment, the long afterglow material is ZnS:Cu.

[0083] Preferably, in this embodiment, the thickness of the antireflection film is 1 / 4 of the wavelength of the incident ultraviolet light, thereby avoiding reflection of the incident light and improving light absorption rate.

[0084] Example 2:

[0085] In this embodiment, reference Figure 11 , providing an integrated device of UVPT-LED for optical interactive display, including a P-type gallium nitride layer 201, a quantum well layer 202, a first N-type gallium nitride layer 203, a second P-type gallium nitride layer 204, a third N-type gallium nitride layer 205, a buffer layer 206, a substrate 207, a magnesium metal film layer 208, an anode metal contact layer 209, a cathode metal contact layer 210, an emitter metal contact layer 211, a collector metal contact layer 212, a dielectric layer 213, a metal lead 214, a long afterglow material layer 215, and an anti-reflection film layer 216;

[0086] like Figure 12-21 As shown, this embodiment also provides a method for preparing the above-mentioned UVPT-LED integrated device for optical interactive display, comprising the following steps:

[0087] S21: Depositing a buffer layer 206 on the surface of the substrate 7, sequentially forming a third N-type gallium nitride layer 205, a second P-type gallium nitride layer 204, and a first N-type gallium nitride layer 203 on the buffer layer 206 by metal organic chemical vapor deposition (MOCVD), and depositing a dielectric layer on the first N-type gallium nitride layer 203 by physical vapor deposition;

[0088] S22: removing part of the dielectric layer by ICP dry etching;

[0089] S23: forming a quantum well layer 202 and a P-type gallium nitride layer 201 on the first N-type gallium nitride layer 203 by metal organic chemical vapor deposition;

[0090] S24: removing the dielectric layer by wet etching;

[0091] S25: ICP etching removes a portion of the P-type gallium nitride layer 201 and the quantum well 202 to expose a portion of the first N-type gallium nitride layer 203 and the third N-type gallium nitride layer 205;

[0092] S26: using electron beam evaporation or sputtering technology, a Mg metal thin film layer 208 is deposited on the exposed area after S25;

[0093] S27: Annealing the wafer obtained after step S26;

[0094] S28: Soak the wafer obtained after step S27 in dilute HCl (HCl:H2O=1:4) to remove residual Mg;

[0095] S29: Using electron beam evaporation or sputtering technology, deposit an anode metal contact layer 208 on the P-type gallium nitride layer 201; deposit a cathode metal contact layer 210 on the first N-type gallium nitride layer 203; deposit a collector metal contact layer 212 on the third N-type gallium nitride layer 205; and deposit an emitter metal contact layer 211 on the second N-type gallium nitride layer 203;

[0096] S210: depositing a dielectric layer on the surface of the magnesium after step S29 by physical vapor deposition;

[0097] S211: sputtering a Ti / Al metal layer 214 between the cathode metal contact layer 210 and the collector metal contact layer 211;

[0098] S212: using a dimethylsiloxane (PDMS) stamp transfer method, a long afterglow material layer 215 is transferred onto the P-type gallium nitride layer 201 around the anode metal contact layer 209;

[0099] S213 : depositing a magnesium oxide antireflection film 216 on the first gallium nitride layer 204 by vacuum evaporation or sputtering technology.

[0100] Preferably, in this embodiment, a magnesium metal layer is deposited in the etched area to reduce etching damage to the wafer and lower interconnect resistance.

[0101] Preferably, in this embodiment, the long afterglow material is ZnS:Cu, and the thickness of the antireflection film is 1 / 4 of the wavelength of the incident ultraviolet light, thereby avoiding reflection of the incident light and improving light absorption rate.

[0102] Example 3:

[0103] like Figure 22 As shown, this embodiment provides an integrated device of UVPT-LED for optical interactive display, including a P-type gallium nitride layer 301, a quantum well layer 302, a first N-type gallium nitride layer 303, a second P-type gallium nitride layer 304, a third N-type gallium nitride layer 305, a buffer layer 306, a substrate 307, an anode metal contact layer 308, a collector metal contact layer 309, a long afterglow material layer 310, and an anti-reflection film layer 311;

[0104] like Figure 23-28 As shown, this embodiment also provides a method for preparing the above-mentioned UVPT-LED integrated device for optical interactive display, comprising the following steps:

[0105] S31: Depositing a buffer layer 306 on the surface of the substrate 7, sequentially forming a third N-type gallium nitride layer 305, a second P-type gallium nitride layer 304, and a first N-type gallium nitride layer 303 on the buffer layer 306 by metal organic chemical vapor deposition (MOCVD), and depositing a dielectric layer on the first N-type gallium nitride layer 303 by physical vapor deposition;

[0106] S32: removing part of the dielectric layer by ICP dry etching;

[0107] S33: forming a quantum well layer 302 and a P-type gallium nitride layer 301 in sequence on the first N-type gallium nitride layer 303 by metal organic chemical vapor deposition;

[0108] S34: removing the dielectric layer by wet etching;

[0109] S35: using electron beam evaporation or sputtering technology, an emitter metal contact layer 309 is deposited below the substrate 307; an anode metal contact layer is deposited on the P-type gallium nitride layer 301;

[0110] S36: Using a dimethylsiloxane (PDMS) stamp transfer method, a long afterglow material layer 310 is transferred onto the P-type gallium nitride layer 301 around the anode metal contact layer 308;

[0111] S37 : depositing a magnesium oxide antireflection film 311 on the first gallium nitride layer 303 by vacuum evaporation or sputtering technology.

[0112] Preferably, in this embodiment, selective epitaxial growth is adopted to simplify the experimental steps, avoid the damage to the device surface caused by the ICP dry etching process in the traditional device preparation process, reduce the interconnection resistance, and avoid the degradation of the device's photoelectric performance.

[0113] Preferably, the long afterglow material is ZnS:Cu, and the thickness of the antireflection film is 1 / 4 of the wavelength of the incident ultraviolet light, thereby avoiding reflection of the incident light and improving light absorption rate.

[0114] The above description is only a preferred embodiment of the present invention. All equivalent changes and modifications made according to the scope of the patent application of the present invention should fall within the scope of the present invention.

Claims

1. A UVPT-LED integrated device for optical interactive display, characterized in that: The invention comprises a P-type gallium nitride layer, a quantum well layer, a first N-type gallium nitride layer, a second P-type gallium nitride layer, a third N-type gallium nitride layer, a buffer layer, a substrate, an anode metal contact layer, a collector metal contact layer, a long afterglow material layer and a magnesium oxide anti-reflection film layer; the substrate, the buffer layer, the third N-type gallium nitride layer, the second P-type gallium nitride layer and the first N-type gallium nitride layer are arranged in sequence from bottom to top; the quantum well layer is arranged on the first N-type gallium nitride layer; the anode metal contact is arranged on the P-type gallium nitride layer; an annular long afterglow material layer surrounds the anode metal contact layer; the magnesium oxide anti-reflection film layer surrounds the first N-type gallium nitride layer; and the collector metal contact layer is arranged on the buffer layer.

2. The integrated device of UVPT-LED for optical interactive display according to claim 1, characterized in that: It also includes an emitter metal contact layer, which is arranged above the third N-type gallium nitride layer. The cathode metal contact layer and the collector metal contact layer are interconnected through metal wires.

3. The integrated device of UVPT-LED for optical interactive display according to claim 1, characterized in that: It also includes an emitter metal contact layer, which is arranged above the third N-type gallium nitride layer; and a magnesium metal thin film layer is arranged on the first N-type gallium nitride layer and the third N-type gallium nitride layer.

4. The integrated device of UVPT-LED for optical interactive display according to claim 1, characterized in that: The device also includes an emitter metal contact layer, which is arranged below the substrate.

5. The UVPT-LED integrated device for optical interactive display according to any one of claims 1 to 4, characterized in that: The material of the long afterglow material layer is ZnS:Cu.

6. The UVPT-LED integrated device for optical interactive display according to any one of claims 1 to 4, characterized in that: The thickness of the first N-type gallium nitride layer is between 10 nm and 200 nm; the thickness of the second P-type gallium nitride layer should be between 50 nm and 200 nm; and the thickness of the third N-type gallium nitride layer should be between 50 nm and 200 nm.

7. The UVPT-LED integrated device for optical interactive display according to any one of claims 1 to 4, characterized in that: The materials used for the anode metal contact layer, the cathode metal contact layer, the emitter metal contact layer and the collector metal contact layer include molybdenum, tungsten, titanium, nickel, gold, silver, cadmium and platinum.

8. A method for preparing the UVPT-LED integrated device for optical interactive display according to claim 2, characterized in that: The following steps are involved: S11: depositing a buffer layer on the substrate surface, sequentially forming a third N-type gallium nitride layer, a second P-type gallium nitride layer, and a first N-type gallium nitride layer on the buffer layer using metal organic chemical vapor deposition; and depositing a dielectric layer on the first N-type gallium nitride layer using physical vapor deposition; S12: using ICP dry etching to remove part of the dielectric layer; S13: forming a quantum well layer and a P-type gallium nitride layer in sequence on the first N-type gallium nitride layer by metal organic chemical vapor deposition; S14: removing the dielectric layer by wet etching; S15: ICP etching removes part of the P-type gallium nitride layer and the quantum well, exposing part of the first N-type gallium nitride layer and the third N-type gallium nitride layer; S16: using electron beam evaporation or sputtering technology, depositing an anode metal contact layer on the P-type gallium nitride layer; depositing a cathode metal contact layer on the first N-type gallium nitride layer; depositing a collector metal contact layer on the third N-type gallium nitride layer, and depositing an emitter metal contact layer on the second N-type gallium nitride layer; S17: depositing a dielectric layer on the surface exposed after etching by physical vapor deposition in step S16; S18: sputtering a Ti / Al layer between the cathode metal contact layer and the collector metal contact layer to form an interconnection between the cathode and the collector; S19: using a dimethylsiloxane stamp transfer method, transferring a long afterglow material layer onto the P-type gallium nitride layer 101 surrounding the anode metal contact layer; S110: depositing a magnesium oxide antireflection film on the third gallium nitride layer by using a vacuum evaporation method or a sputtering technique.

9. A method for preparing a UVPT-LED integrated device for optical interactive display according to claim 3, characterized in that S21: depositing a buffer layer on the substrate surface, sequentially forming a third N-type gallium nitride layer, a second P-type gallium nitride layer, and a first N-type gallium nitride layer on the buffer layer using metal organic chemical vapor deposition, and depositing a dielectric layer on the first N-type gallium nitride layer using physical vapor deposition; S22: removing part of the dielectric layer by ICP dry etching; S23: forming a quantum well layer and a P-type gallium nitride layer in sequence on the first N-type gallium nitride layer by metal organic chemical vapor deposition; S24: removing the dielectric layer by wet etching; S25: ICP etching removes part of the P-type gallium nitride layer and the quantum well, exposing part of the first N-type gallium nitride layer and the third N-type gallium nitride layer; S26: Electron beam evaporation or sputtering technology is used to deposit a Mg metal thin film layer on the exposed area after S25; S27: Annealing the wafer obtained after step S26; S28: Soaking the wafer obtained after step S27 in dilute HCl to remove residual Mg; S29: using electron beam evaporation or sputtering technology, depositing an anode metal contact layer on the P-type gallium nitride layer; depositing a cathode metal contact layer on the first N-type gallium nitride layer; depositing a collector metal contact layer on the third N-type gallium nitride layer, and depositing an emitter metal contact layer on the second N-type gallium nitride layer; S210: depositing a dielectric layer on the surface of the magnesium after step S29 by physical vapor deposition; S211: a Ti / Al metal layer is sputtered between the cathode metal contact layer and the collector metal contact layer; S212: Using a dimethylsiloxane stamp transfer method, a long afterglow material layer is transferred onto the P-type gallium nitride layer surrounding the anode metal contact layer; S213: depositing a magnesium oxide antireflection film on the first gallium nitride layer by using a vacuum evaporation method or a sputtering technique.

10. A method for preparing the UVPT-LED integrated device for optical interactive display according to claim 4, characterized in that: S31: depositing a buffer layer on the substrate surface, sequentially forming a third N-type gallium nitride layer, a second P-type gallium nitride layer, and a first N-type gallium nitride layer on the buffer layer using metal organic chemical vapor deposition, and depositing a dielectric layer on the first N-type gallium nitride layer using physical vapor deposition; S32: removing part of the dielectric layer by ICP dry etching; S33: forming a quantum well layer and a P-type gallium nitride layer in sequence on the first N-type gallium nitride layer by metal organic compound chemical vapor deposition; S34: removing the dielectric layer by wet etching; S35: Using electron beam evaporation or sputtering technology, deposit an emitter metal contact layer under the substrate; deposit an anode metal contact layer on the P-type gallium nitride layer; S36: Using a dimethylsiloxane stamp transfer method, a long afterglow material layer is transferred onto the P-type gallium nitride layer surrounding the anode metal contact layer; S37: Depositing a magnesium oxide antireflection film on the first gallium nitride layer by using a vacuum evaporation method or a sputtering technique.

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