A semiconductor fiber-coupled laser

Abstract

This invention discloses a semiconductor fiber-coupled laser, the key technical point of which includes a chip module and a mirror module. The mirror module includes a first slow-axis collimating mirror and a fast-axis compression mirror group. The chip module includes a first strip mirror, a first chip group, and a second chip group. The first and second chip groups are mounted at an angle 'a', and the second chip group is mounted at an angle 'b' with the first strip mirror. The beam emitted from the first chip group is transmitted through the first strip mirror along a first direction, and the beam emitted from the second chip group is reflected through the first strip mirror along the first direction. The protruding surface of the slow-axis collimating mirror is positioned away from the chip module, and the fast-axis compression mirror group is positioned opposite to the protruding surface of the slow-axis collimating mirror. This invention shapes the output light field through structural improvements, resulting in parallel light output, increasing chip lifespan and beam quality, and also improving the coupling efficiency of the fiber coupling module.

Description

Technical Field

[0001] This invention relates to the field of semiconductor laser technology, and more specifically, to a semiconductor fiber-coupled laser. Background Technology

[0002] With the development of technology, optoelectronics is being applied to all aspects of life. Semiconductor lasers are widely used in optoelectronics due to their advantages such as small size, simple structure, low input energy, long lifespan, ease of modulation, and relatively low cost. However, most semiconductor lasers are currently limited by the structure of semiconductors, resulting in asymmetrical beam output along the fast and slow axes and a large divergence angle. Therefore, it is necessary to shape the output light field of semiconductor lasers; otherwise, it can easily lead to shifts in output wavelength and spectral width, reduced chip lifespan, decreased output beam quality, decreased coupling efficiency of fiber optic coupling modules, and even module burnout. Summary of the Invention

[0003] To address the shortcomings of existing technologies, the present invention aims to provide a semiconductor fiber-coupled laser. Through structural improvements, the optical field of the semiconductor laser output is shaped, thereby increasing chip lifespan, improving output beam quality, and enhancing coupling efficiency.

[0004] To achieve the above objectives, the present invention provides the following technical solution: a semiconductor fiber-coupled laser, comprising a chip module and a mirror module, characterized in that: the mirror module includes a first slow-axis collimating mirror and a fast-axis compression mirror group; the chip module includes a first strip mirror, a first chip group, and a second chip group; the first chip group and the second chip group are mounted at an angle 'a', and the second chip group and the first strip mirror are mounted at an angle 'b'; the light beam emitted by the first chip group is transmitted through the first strip mirror along a first direction, and the light beam emitted by the second chip group is reflected through the first strip mirror along the first direction; the protruding surface of the slow-axis collimating mirror is disposed away from the chip module, and the fast-axis compression mirror group is disposed opposite to the protruding surface of the slow-axis collimating mirror.

[0005] In summary, the present invention has the following beneficial effects: by improving the structure, the output light field is shaped to make the light beam output parallel, which increases the chip life and beam quality, and also improves the coupling efficiency of the fiber optic coupling module. Attached Figure Description

[0006] Figure 1 This is a schematic diagram of a semiconductor fiber-coupled laser.

[0007] Figure 2 This is a schematic diagram of the second strip mirror structure of a semiconductor fiber-coupled laser.

[0008] Figure 3 This is a schematic diagram of the second chipset structure of a semiconductor fiber-coupled laser.

[0009] Figure 4 This is a schematic diagram of the three-dimensional structure of a semiconductor fiber-coupled laser chip.

[0010] Reference numerals: 1. Second FAC mirror; 2. Second chipset; 21. First chip array; 211. Top layer; 212. Substrate; 213. Bottom layer; 214. Laser chip; 215. Indium layer; 216. Gold-tin layer; 22. First FAC mirror; 23. Second chip array; 24. Second strip mirror; 25. Second slow-axis collimating mirror; 26. Convex fast-axis compression mirror; 27. Concave fast-axis compression mirror; 28. Chip block; 29. ​​Heat conductor; 3. First chipset; 4. First strip mirror; 41. Transparent film; 42. Reflective film; 5. First slow-axis collimating mirror; 6. Second fast-axis compression mirror; 7. Third fast-axis compression mirror. Detailed Implementation

[0011] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Identical components are denoted by the same reference numerals. It should be noted that the terms "front," "rear," "left," "right," "upper," and "lower" used in the following description refer to directions in the accompanying drawings, and the terms "bottom surface," "top surface," "inner," and "outer" refer to directions toward or away from the geometric center of a specific component, respectively.

[0012] Reference Figure 1-4 The first embodiment shown discloses a semiconductor fiber-coupled laser, comprising a chip module and a mirror module. The mirror module includes a first slow-axis collimating mirror 5 and a fast-axis compression mirror assembly. The chip module includes a first strip mirror 4, a first chip group 3, and a second chip group 2. The first chip group 3 and the second chip group 2 are mounted at an angle 'a', and the second chip group 2 and the first strip mirror 4 are mounted at an angle 'b'. The light beam emitted from the first chip group 3 is transmitted through the first strip mirror 4 along a first direction, and the light beam emitted from the second chip group 2 is reflected through the first strip mirror 4 along the first direction. The protruding surface of the slow-axis collimating mirror is positioned away from the chip module, and the fast-axis compression mirror assembly is positioned opposite to the protruding surface of the slow-axis collimating mirror. Through the above arrangement, the light field output by the semiconductor laser is shaped, so that the light is output in parallel, thereby increasing the chip lifespan, improving the output beam quality, and increasing the coupling efficiency.

[0013] As a further improvement of the present invention, both the first chipset 3 and the second chipset 2 include a chip array region, a second strip mirror 24, a second slow-axis collimating mirror 25, a convex fast-axis compression mirror 26 and a concave fast-axis compression mirror 27; the second slow-axis collimating mirror 25, the convex fast-axis compression mirror 26 and the concave fast-axis compression mirror 27 are arranged sequentially away from the chip array region.

[0014] The chip array area includes a first chip array 21 and a second chip array 23. A second strip mirror 24 is positioned between the first chip array 21 and the second chip array 23. A convex fast-axis compression mirror 26 has its protruding surface facing the second slow-axis collimating mirror 25, and a concave fast-axis compression mirror 27 has its planar area facing the planar area of ​​the convex fast-axis compression mirror 26. This allows light to pass through the convex fast-axis compression mirror 26 and then onto the concave fast-axis compression mirror 27. Through this arrangement, the light field output by the chip array is shaped, and then the light is projected onto the first strip mirror 4. The light is shaped and compressed, thereby improving the coupling efficiency of the fiber optic coupling module.

[0015] As a further improvement of the present invention, both the first chip array 21 and the second chip array 23 include chip blocks 28, which are arranged side by side and fixed by a heat-conducting component 29. A gap is provided between the chip blocks 28, and the chip blocks 28 of the first chip array 21 correspond to the chip gaps of the second chip array 23. The chip blocks 28 are staggered to improve the brightness of the laser module and increase the coupling efficiency.

[0016] As a further improvement of the present invention, the chip block 28 includes a bottom layer 213, a top layer 211, a substrate 212, and a laser chip 214; the top layer 211 is in the shape of an inverted "U" that wraps around one end of the substrate 212, the bottom layer 213 is disposed at the end of the substrate 212 away from the top layer 211, the side of the top layer 211 is plated with a gold-tin layer 214, the gold-tin layer 214 is connected to the positive electrode surface of the laser chip 214, the negative electrode surface of the laser chip 214 is mounted with an indium layer 215, the top layer 211 serves as an electrode connection, connecting the positive and negative electrodes of the array of chips; the bottom layer 213 serves to achieve metal welding with the heat conductor 29, transferring the heat converted at the core to the heat conductor 29.

[0017] As a further improvement of the present invention, the bottom layer 213 and the top layer 211 are made of copper, and the substrate 212 is made of aluminum nitride. The aluminum nitride substrate has good thermal conductivity and its coefficient of thermal expansion is close to that of the potassium arsenide material of the laser chip 214, thereby reducing the phenomenon of coating cracking after long-term use due to excessive difference in coefficient of thermal expansion.

[0018] As a further improvement of the present invention, the surfaces of the first chip array 21 and the second chip array 23 are also provided with a first FAC mirror 22. The first FAC mirror 22 is mounted in the gap between the chip blocks 28, thereby improving the brightness of the laser module and improving the coupling efficiency of the fiber optic coupling module.

[0019] As a further improvement of the present invention, both the first strip mirror 4 and the second strip mirror 24 include a reflective film 42 and a transparent film 41. The reflective film 42 and the transparent film 41 are installed alternately on the first strip mirror 4 and the second strip mirror 24. The design of the reflective film 42 and the transparent film 41 makes multiple beams of light parallel to each other in the same direction.

[0020] As a further improvement of the present invention, the fast-axis compression lens group is divided into a second fast-axis compression lens 6 and a third fast-axis compression lens 7, and the fast-axis compression lens group is arranged in the order of the second fast-axis compression lens 6 and the third fast-axis compression lens 7, moving away from the protruding surface of the first slow-axis collimating lens 5.

[0021] As a further improvement of the present invention, both the first chip group 3 and the second chip group 2 are provided with a second FAC mirror 1 near the first strip mirror 4 to compress the light beam generated by the chip group, improve the brightness, and thus improve the coupling efficiency.

[0022] After the power supply is connected, the current passes through the laser chip 214 to form a light field. The light field passes through the first FAC mirror 22 to form light rays. The convex surface of the FAC mirror is aligned with the second strip mirror 24, thereby projecting the light rays onto the second strip mirror 24. Through the design of the strip mirror reflective film 42 and the transparent film 41, the reflective film 42 corresponds to the light rays emitted by the second chip array 23, and the transparent film 41 corresponds to the light rays emitted by the first chip array 21, thereby reflecting (transmitting) the light rays from the strip mirror onto the second slow-axis collimating mirror 25. The light rays pass through the second slow-axis collimating mirror 25 to make the diverging light rays become parallel light rays. At this time, multiple parallel light rays are formed, and then the convex fast-axis compression mirror 26 concentrates the light rays onto the concave fast-axis compression mirror 27, thereby forming a high-brightness beam.

[0023] The second FAC mirror 1 then compresses and projects the light beam onto the first strip mirror 4. Due to the design of the reflective film 42 and the transparent film 41 of the first strip mirror 4, the light beam emitted by the first chip group 3 is transmitted through the first strip mirror 4 along the first direction, and the light beam emitted by the second chip group 2 is reflected through the first strip mirror 4 along the first direction, thereby forming a regularly divergent light field that is reflected (transmitted) onto the first slow-axis collimating mirror 5. The light field is collimated into a parallel light beam by the first slow-axis collimating mirror 5.

[0024] Finally, the light beam is compressed into a high-intensity parallel beam by the second fast-axis compression mirror 6 and the third fast-axis compression mirror 7, thereby achieving the effects of shaping the light field output by the semiconductor laser, making the light beam output parallel, increasing the chip's lifespan and beam quality, and also improving the coupling efficiency of the fiber optic coupling module.

[0025] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principle of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor fiber-coupled laser comprising a chip module and a mirror module, characterized in that: The mirror module comprises a first slow-axis collimating mirror (5) and a fast-axis compression mirror group, the chip module comprises a first strip mirror (4), a first chip group (3) and a second chip group (2), the first chip group (3) and the second chip group (2) are installed at an angle a, the second chip group (2) and the first strip mirror (4) are installed at an angle b; the light beam emitted by the first chip group (3) is transmitted out along the first direction through the first strip mirror (4), the light beam emitted by the second chip group (2) is reflected out along the first direction after passing through the first strip mirror (4), the first slow-axis collimating mirror (5) is arranged away from the chip module, and the fast-axis compression mirror group is arranged opposite to the protruding surface of the first slow-axis collimating mirror (5); The first chip group (3) and the second chip group (2) each comprise a chip array area, a second strip mirror (24), a second slow-axis collimating mirror (25), a convex fast-axis compression mirror (26) and a concave fast-axis compression mirror (27); the second slow-axis collimating mirror (25), the convex fast-axis compression mirror (26) and the concave fast-axis compression mirror (27) are arranged away from the chip array area in sequence; The chip array area comprises a first chip array (21) and a second chip array (23), the second strip mirror (24) is arranged between the first chip array (21) and the second chip array (23), the protruding surface of the convex fast-axis compression mirror (26) is arranged towards the second slow-axis collimating mirror (25), and the planar area of the concave fast-axis compression mirror (27) is arranged towards the planar area of the convex fast-axis compression mirror (26), so that the light passes through the convex fast-axis compression mirror (26) and then irradiates onto the concave fast-axis compression mirror (27); The first strip mirror (4) and the second strip mirror (24) each comprise a reflecting film (42) and a see-through film (41), the reflecting film (42) and the see-through film (41) are arranged on the first strip mirror (4) and the second strip mirror (24) in a spaced manner; the reflecting film (42) of the second strip mirror (24) corresponds to the light emitted by the second chip array (23), and the see-through film (41) of the second strip mirror (24) corresponds to the light emitted by the first chip array (21), so that the light is transmitted from the second strip mirror to the second slow-axis collimating mirror (25); the light passing through the second slow-axis collimating mirror (25) changes the divergent light into parallel light, at this time, a plurality of parallel lights are formed, and then the light is concentrated to the concave fast-axis compression mirror (27) by the convex fast-axis compression mirror (26), so that a light beam with higher brightness is formed.

2. A semiconductor fiber-coupled laser as claimed in claim 1, characterized in that: The first chip array (21) and the second chip array (23) each comprise a chip block (28), the chip blocks (28) are arranged side by side, and a chip block (28) gap is arranged between the chip blocks (28), and the chip block (28) of the first chip array (21) corresponds to the chip gap of the second chip array (23).

3. A semiconductor fiber-coupled laser as claimed in claim 2, characterized in that: The chip block (28) comprises a bottom layer (213), a top layer (211), a base (212) and a laser chip (214); the top layer (211) is in the shape of an inverted "U" and wraps one end of the base (212); the bottom layer (213) is arranged at the end of the base (212) away from the top layer (211); the side surface of the top layer (211) is plated with a gold-tin layer (216); the gold-tin layer (216) is connected to the positive electrode surface of the laser chip (214); and the negative electrode surface of the laser chip (214) is provided with an indium layer (215).

4. A semiconductor fiber-coupled laser as claimed in claim 3, characterized in that: The material of the bottom layer (213) and the top layer (211) is red copper, and the material of the base (212) is aluminum nitride.

5. A semiconductor fiber-coupled laser as claimed in claim 3, characterized in that: The first chip array (21) and the second chip array (23) are further provided with a first FAC mirror (22) on the surface thereof; and the first FAC mirror (22) is arranged in a plane at the gap between the chip blocks (28).

6. A semiconductor fiber-coupled laser as recited in claim 1, further comprising: The fast-axis compression lens group comprises a second fast-axis compression lens (6) and a third fast-axis compression lens (7); and the fast-axis compression lens group is arranged in the order of the second fast-axis compression lens (6) and the third fast-axis compression lens (7) away from the protruding surface of the first slow-axis collimating lens (5).

7. A semiconductor fiber-coupled laser as recited in claim 1, further comprising: The first chip group (3) and the second chip group (2) are further provided with a second FAC mirror (1) near the first strip mirror (4).

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