Method of depositing material on a substrate, controller configured to be connectable to a system for depositing material, and system for depositing material

Abstract

A method of depositing material on a substrate is described. The method includes sputtering at least one component of the material from a first rotating target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement region in a first direction facing a second rotating target, at least three poles of the first magnet assembly facing the first plasma confinement region. The second magnet assembly provides a second plasma confinement region in a second direction facing a third rotating target, at least three poles of the second magnet assembly facing the second plasma confinement region.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to depositing a material on a substrate. Embodiments of the present disclosure particularly relate to depositing a material on a substrate by facing target sputtering. BACKGROUND

[0002] Depositing a material on a substrate has many applications in various technical fields. Sputtering is a method for depositing a material on a substrate. Sputtering can be associated with bombarding a substrate, in particular a film located on the substrate, with high-energy particles. Bombardment can have an adverse effect on the properties of a material, in particular a film, located on the substrate. To avoid bombardment, for example, a facing target sputtering (FTS) system with planar targets is envisaged. In an FTS system, the targets face each other instead of facing the substrate directly as targets. However, the stability of the sputter plasma in conventional FTS systems is limited. The applicability of conventional FTS systems in mass production is impaired. In addition, conventional FTS systems are associated with low deposition rates, resulting in low production rates and a risk of substrate surface contamination.

[0003] In view of the above, it would be beneficial to provide an improved method of depositing a material on a substrate. SUMMARY

[0004] According to one embodiment, a method of depositing a material on a substrate is provided. The method comprises sputtering at least one component of the material from a first rotating target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement in a first direction facing a second rotating target, at least three poles of the first magnet assembly facing the first plasma confinement. The second magnet assembly provides a second plasma confinement in a second direction facing a third rotating target, at least three poles of the second magnet assembly facing the second plasma confinement.

[0005] According to one embodiment, a system for depositing a material is provided. The system comprises a first rotating target, a second rotating target, and a third rotating target, the first rotating target comprising a first magnet assembly and a second magnet assembly. The system is configured such that, during deposition of the material, the first magnet assembly provides a first plasma confinement in a first direction facing the second rotating target, at least three poles of the first magnet assembly facing the first plasma confinement, and the second magnet assembly provides a second plasma confinement in a second direction facing the third rotating target, at least three poles of the second magnet assembly facing the second plasma confinement.

[0006] The present disclosure will be understood to encompass apparatuses and systems for implementing the disclosed methods, including apparatus components for performing each described method aspect. Method aspects can be performed, for example, by hardware components, by a computer programmed by appropriate software, or by any combination of the two. The present disclosure is also understood to encompass methods for operating the described apparatuses and systems. Methods for operating the described apparatuses and systems include method aspects for performing each function of the respective apparatus or system. BRIEF DESCRIPTION OF DRAWINGS

[0007] So that the manner in which the above-recited features can be understood in detail, a brief description of the embodiments can be had below with reference to the drawings.

[0008] Figures 1A-1C is a schematic cross-sectional view of a system for depositing material according to embodiments described herein;

[0009] Figure 2 is a schematic cross-sectional view of a system for depositing material according to embodiments described herein;

[0010] Figure 3 is a schematic cross-sectional view of a system for depositing material according to embodiments described herein;

[0011] Figure 4 is a chart illustrating a method of depositing material on a substrate according to embodiments described herein. DETAILED DESCRIPTION

[0012] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the drawings. Within the following description of each drawing, same reference numbers refer to same components. Generally, only the differences between respective embodiments will be described. Each example is provided as an explanation and is not intended to be limiting. In addition, features illustrated or described as part of one embodiment can be used on another embodiment or in combination with another embodiment to produce yet another embodiment. The description is intended to include such modifications and variations.

[0013] Figures 1A-1C is a schematic cross-sectional view of a system for depositing material according to embodiments described herein. Figure 1A The system 100 shown includes a first rotating target 110 having a first magnet assembly 112 and a second magnet assembly 116. Both the first magnet assembly 112 and the second magnet assembly 116 are positioned within the first rotating target 110. The first and second magnet assemblies can face, in particular be operated to face, opposite sides of the first rotating target 110.

[0014] The system further comprises a second rotating target 130 and a third rotating target 150. The first rotating target 110 can be operated such that the first magnet assembly 112 of the first rotating target 110 faces the second rotating target 130. The first rotating target can be operated such that the second magnet assembly 116 of the first rotating target 110 faces the third rotating target 150.

[0015] As shown in the depicted example, the first magnet assembly 112 of the first rotating target (in particular during deposition of material) can provide a first plasma confinement region 120 in a first direction facing the second rotating target 130. The second magnet assembly 116 of the first rotating target 110 (in particular during deposition of material) can provide a second plasma confinement region 122 in a second direction facing the third rotating target.

[0016] In embodiments, for example as Figure 1A illustrated, the second rotating target 130 and the third rotating target 150 can have at least substantially the same structure as the first rotating target 110. The magnet assembly of the second rotating target 130 can provide a third plasma confinement region 140 in a direction facing the first rotating target 110.

[0017] The plasma associated with sputter deposition can be captured between the first rotating target and the second rotating target. The first plasma confinement region 120 and the third plasma confinement region 140 can at least partially overlap. In particular, the first rotating target and the second rotating target are adjacent targets. More particularly, no further target is positioned in the area between the first rotating target and the second rotating target.

[0018] Similarly, the magnet assembly of the third rotating target 150 can provide a fourth plasma confinement region 160 in a direction facing the first rotating target 110. The structural relationship between the third rotating target 150 and the first rotating target 110 can be similar to the relationship described above between the second rotating target 130 and the first rotating target 110.

[0019] In the context of the present disclosure, a plasma confinement zone is in particular to be understood as a plasma confinement region. A plasma confinement region can be understood as a region in which the amount of plasma is increased relative to the environment, in particular resulting from the influence of a magnetic field associated with a magnet assembly of a rotating target. In the context of the present disclosure, providing a plasma confinement zone in a direction is in particular to be understood as providing the plasma confinement zone such that a main direction of the plasma confinement zone extends in that direction. In particular in embodiments in which the magnet assembly comprises a permanent magnet, providing a plasma confinement zone in a direction facing the rotating target can be understood as providing the magnet assembly at a position such that the magnet assembly faces the direction, e.g. is adjacent to the rotating target, i.e. the symmetry axis of the magnet assembly faces the direction. According to some embodiments of the present disclosure, the plasma confinement zone is provided in a plasma racetrack, in particular a closed plasma racetrack. The plasma confinement zone associated with one magnetron or magnet assembly provides a closed loop. The closed loop can for example be provided at one target, i.e. the target in which the magnet assembly is provided.

[0020] Generally, a magnet assembly positioned within a rotating target can enable magnetron sputtering. As used herein, “magnetron sputtering” refers to sputtering performed using a magnetron, i.e. a magnet assembly. A magnet assembly is in particular to be understood as a unit capable of generating a magnetic field. The magnet assembly can comprise one or more permanent magnets. The permanent magnets can be arranged within the rotating target such that free electrons are trapped within the generated magnetic field, e.g. in a closed loop or racetrack. The magnet assembly can be provided within a backing tube or within a target material tube of the rotating target. Each of the first rotating target, the second rotating target, and the third rotating target can be a cathode or can be part of a cathode. The system can be configured for DC sputtering. In embodiments, the system can be configured for pulsed DC sputtering.

[0021] A rotating target is in particular to be understood as a rotatable sputter target, such as a cylindrical sputter target. In particular, the rotating target can be a rotatable cathode comprising a material to be deposited. The rotating target can be connected to a shaft configured to be rotated in at least one operating state of the system. The rotating target can be directly connected to the shaft or indirectly connected to the shaft via a connecting element. According to some embodiments, the rotating target in the deposition chamber can be exchangeable. The rotating target can be exchanged after the material to be sputtered has been consumed.

[0022] In embodiments, the system can be configured for sputtering of transparent conductive oxide films. The system can be configured for deposition of materials such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), or MoN. In embodiments, the system can be configured for deposition of metallic materials such as silver, magnesium silver (MgAg) aluminum, indium, indium tin (InSn), indium zinc (InZn), gallium, gallium zinc (GaZn), niobium, alkali metals (such as Li or Na), alkaline earth metals (such as Mg or Ca), yttrium, lanthanum, lanthanides (such as Ce, Nd, or Dy), and alloys of these materials. The system can be configured for deposition of electrodes, in particular transparent electrodes in displays (in particular OLED displays, liquid crystal displays, and touch screens). More particularly, the system can be configured for deposition of top contacts for top-emitting OLEDs. In embodiments, the system can be configured for deposition of electrodes, in particular transparent electrodes in thin-film solar cells, photodiodes, and smart or switchable glass. The system can be configured for sputtering of transparent dielectrics used as charge generation layers. The system can be configured for deposition of materials such as molybdenum oxide (MoO) or transition metal oxides (such as vanadium oxide (VO) or tungsten oxide (WOx), zirconium oxide (ZrO), or lanthanum oxide (LaO)). The system can be configured for sputtering of transparent dielectrics for optical enhancement layers such as silicon oxide (SiO), niobium oxide (NbO), titanium oxide (TiO), or tantalum oxide (TaO).

[0023] In embodiments, the target material of the rotating target can be selected from the group consisting of silver, aluminum, silicon, tantalum, molybdenum, niobium, titanium, and copper. In particular, the target material can be selected from the group consisting of IZO, ITO, silver, IGZO, aluminum, silicon, NbO, titanium, zirconium, and tungsten. The system can be configured for deposition of materials via reactive sputter processes. In reactive sputter processes, typically oxides of the target material are deposited. However, nitrides or oxynitrides can also be deposited.

[0024] The plasma confinement zone of the first rotating target facing the feature of the second rotating target or the third rotating target can have the advantage that a soft deposition is achieved. For example, the bombardment of high-energy particles on the substrate can be reduced. Damage to the substrate (in particular to a coating on the substrate) can be mitigated. This is particularly advantageous for deposition on sensitive substrates or layers, more particularly on substrates with sensitive coatings.

[0025] For example, when depositing electrodes of OLEDs, the material can have to be deposited on highly sensitive layers. For certain materials, in particular transparent conductive oxides, soft evaporation with conventional techniques can not be possible. Embodiments of the present disclosure employ a face-to-target design to solve this problem. According to embodiments of the present disclosure, by using rotating targets, target surface contamination can be mitigated and system uptime can be increased. In addition, via soft deposition as described herein, the number of high-energy particles (such as sputter particles, negative ions and electrons) impinging on the substrate can be reduced. Temperature variations on or near the substrate surface can be reduced. In particular, lower temperatures on or near the substrate surface can be achieved.

[0026] In conventional technology, face-to-target sputtering (FTS) setups using planar targets are known. A large amount of material is deposited on the surface of the adjacent target. The material deposition on the surface of the target can for example cause nodular growth, followed by arcing with particles or peeling of the deposited material, in particular deposited material layers, from the target. Long-term stability can be impaired, in particular making its use in mass production unfeasible. Known FTS setups with planar targets can have an expected stability of less than one day. According to embodiments of the present disclosure, the plasma confinement region of the first rotating target facing the second rotating target or the third rotating target has the advantage that the material deposited on the surface of any of the rotating targets can be sputtered again, in particular before any nodular growth occurs. In known FTS devices with planar cathodes, only a small amount of material deposited on the racetrack of the planar cathode can be sputtered therefrom. Stable FTS processes with planar targets are difficult or impossible to achieve.

[0027] Compared to magnetron sputtering with planar targets, in rotating targets, the removal of material from the target during magnetron sputtering has an increased uniformity. The uniformity in the case of rotating targets is in particular caused by the movement of the surface of the target relative to the magnetic field due to the rotation of the target. The amount of material collected on the surface of the target can be reduced or even eliminated. Arcing can be reduced or even eliminated. Material peeling can be reduced or eliminated. The stability, in particular the long-term stability, of the deposition process can be improved. The use of the FTS concept for mass production can be achieved. The collection efficiency can be improved, in particular due to the effect that increased amounts of material deposited on the target are sputtered again. The collection efficiency is in particular understood as the amount of sputtered material captured by the substrate relative to the total amount of material emitted by the sputtering target. The material utilization can be improved. Material waste and costs can be reduced.

[0028] The following features can be associated with the increased deposition rate: the first rotating target comprises a first magnet assembly and a second magnet assembly, wherein the first magnet assembly provides a first plasma confinement region in a first direction facing the second rotating target, and the second magnet assembly provides a second plasma confinement region in a second direction facing the third rotating target. In particular, the deposition rate can be much higher, e.g. about twice as high, compared to a system with a rotating target having only one magnet assembly. This increase is in particular due to the creation of two racetracks, more particularly two racetracks located on opposite sides of the target.

[0029] In embodiments, the first magnet assembly comprises at least three magnetic poles facing the first plasma confinement region. The second magnet assembly can comprise at least three magnetic poles facing the second plasma confinement region. In particular, the deposition rate can be much higher, e.g. about twice as high, compared to a system with a rotating target having only one magnet assembly. This increase is in particular due to the creation of two racetracks, more particularly two racetracks located on opposite sides of the target. Figure 1A In the illustrated embodiment, the first magnet assembly 112 comprises three magnetic poles 114 facing the first plasma confinement region 120, and the second magnet assembly 116 comprises three magnetic poles facing the second plasma confinement region 122.

[0030] As mentioned above, the increase in deposition rate due to the presence of two magnet assemblies in the rotating target can be synergistically achieved or enhanced by the feature that the magnet assemblies comprise at least three magnetic poles facing the plasma confinement region. Via the magnet assemblies comprising three, in particular exactly three, magnetic poles facing the plasma confinement region, a closed racetrack can be formed on the rotating target.

[0031] In embodiments, the system 100 can be configured to deposit material on the substrate 102. The system can be further configured such that the first direction and the second direction deviate from being parallel to a substrate plane by an angle of less than 40°. In the context of the present disclosure, the “substrate plane” particularly refers to the plane of the substrate 102 on which material is deposited. In particular, the first direction and the second direction can deviate from being parallel to the substrate plane by an angle of less than 30°, 20°, or 10°, for example. An advantageous configuration can be achieved in which the bombardment of the substrate by high-energy particles is minimized, while at least a satisfactory amount of material is deposited on the substrate. If either of the first direction and the second direction highly deviates from being parallel to the substrate plane in a direction towards the substrate, an unfavorable bombardment of the substrate by high-energy particles can occur in consequence. If either of the first direction and the second direction highly deviates from being parallel to the substrate plane in a direction away from the substrate, an unsatisfactory low deposition rate on the substrate can occur in consequence. Additionally or alternatively, a waste of target material can occur.

[0032] The first direction can correspond to a first angle, in particular a first polar angle of a polar coordinate system. A reference point, in particular a pole, of the polar coordinate system can be located on a rotation axis of the rotating target. A reference direction of the polar coordinate system can be perpendicular to the rotation axis of the rotating target. A deviation of the first direction from a case of being parallel to the substrate plane can refer to a polar coordinate system of the first rotating target. A deviation of the second direction from a case of being parallel to the substrate plane can refer to a polar coordinate system of the second rotating target.

[0033] In embodiments, the system can be configured such that the first direction and the second direction deviate from a case of being parallel to the substrate plane by an angle of less than 40°, 30° or 20° towards the substrate and by an angle of less than 10° away from the substrate.

[0034] In embodiments, the magnets comprised in each of the magnet assemblies of the system can deviate from a case of being parallel to each other. In other words, the magnets of each of the magnet assemblies of the system can enclose an opening angle. In particular, at least one magnet can deviate from a case of being parallel to a central axis or a symmetry axis of the magnet assembly by an angle of more than, for example, 3°, 6° or 10°. At least one magnet can deviate from a case of being parallel to the central axis or the symmetry axis by an angle of less than, for example, 30°, 25° or 15°.

[0035] In embodiments, for example as shown in Figures 1A-1C The second rotating target 130 comprises a third magnet assembly 132 facing the first magnet assembly 112. The third rotating target 150 can comprise a fourth magnet assembly 152 facing the second magnet assembly 116.

[0036] Generally, each of the poles of the third magnet assembly facing the first magnet assembly 112 can have the same polarity as the respective nearest pole of the first magnet assembly 112. Each of the poles of the fourth magnet assembly facing the second magnet assembly 116 can have the same polarity as the respective nearest pole of the second magnet assembly 116. In other words, the facing magnet assemblies can have the same magnetic poles.

[0037] In particular in Figures 1B-1C In the depicted embodiment, each of the poles of the third magnet assembly facing the first magnet assembly 112 can have an opposite polarity as the respective nearest pole of the first magnet assembly 112. Each of the poles of the fourth magnet assembly facing the second magnet assembly 116 can have an opposite polarity as the respective nearest pole of the second magnet assembly 116. In other words, the facing magnet assemblies can have magnetic poles opposite to each other.

[0038] In Figure 1B indicates magnetic field lines that can be generated between the rotating targets. High plasma density regions generated between the rotating targets are indicated as Figure 1CThe magnets of the magnet assemblies are shown with opposite poles facing each other. Having opposite poles facing each other of the magnet assemblies relative to each other is associated with the advantage that a magnetic field can be provided that can provide a magnetic lens. In the magnetic field, charged particles can be deflected. A normal component of the momentum of the charged particles relative to the surface of the substrate can be reduced. The normal component of the momentum is the cause of possible damage by the charged particles to the substrate or a layer positioned on the substrate, in particular a possible damage depth.

[0039] The turning radius of a particle with kinetic energy q-U is:

[0040]

[0041] For a 90° full deflection of oxygen ions with a maximum energy between 250 and 300 eV, it would be beneficial to have a magnetic field with a depth of e.g. 10 cm in the direction towards the substrate positioned between the racetrack and the substrate. In addition, the magnetic field needs to have a high strength, e.g. a strength of 0.1 T. However, in order to only reduce the normal component of the ion momentum, in particular of oxygen ions, the requirements on the magnetic field can be much lower.

[0042] Conventionally, providing magnet assemblies with opposite poles facing each other relative to each other can be considered disadvantageous by the skilled person. The reason is that this configuration at least slightly reduces the tangential magnetic field on the racetrack. The plasma confinement region can be reduced. The plasma potential can increase, in particular by less than 10, 30 or 50 eV. It is part of the disclosure to recognize that the potential negative impact associated with a configuration with opposite poles can be less harmful than expected. In particular, the maximum ion energy always corresponds to a plasma potential of e.g. 250 to 300 eV. Thus, the maximum ion energy can remain exceptionally large compared to the desired particle energy of less than 1 eV, as is in particular observed during evaporation.

[0043] Figure 2 A system 200 for depositing material according to embodiments described herein is shown. A first rotating target 110, a second rotating target 130, and a third rotating target 150 are positioned in a deposition chamber 202. A first additional chamber and a second additional chamber can be provided adjacent to the deposition chamber (not shown). According to some embodiments, which can be combined with other embodiments described herein, a dynamic deposition process can be provided to deposit material over a substrate. For example, the substrate can be moved past the first rotating target and the second rotating target while depositing material. The deposition chamber or region of the vacuum processing system can be separated from additional chambers or other regions by valves.

[0044] According to some embodiments, the process gas can include any of a noble gas, such as argon, krypton, or xenon, and a reactive gas, such as oxygen, nitrogen, hydrogen, and ammonia (NH3), ozone (O3), an activation gas, or the like.

[0045] The substrate 102 can be provided on a substrate carrier (not shown). An exemplary direction of movement of the substrate 102 is indicated by arrow 204. The term “substrate” as used herein shall encompass both non-flexible substrates (e.g., a glass substrate, a wafer, a slice of a transparent crystal such as sapphire, or a glass plate) and flexible substrates such as a web or a foil. According to further embodiments, which can be combined with other embodiments described herein, the transport of the substrate and / or the substrate carrier can be provided by a magnetic levitation system, respectively. The carrier can be levitated or held by magnetic forces without or with reduced mechanical contact and can be moved by magnetic forces.

[0046] Each of the first, second, and third rotating targets 110, 130, 150 can be a cathode. The first, second, and third rotating targets can be electrically connected to a DC power source. For example, the chamber housing or one or more shields within the vacuum chamber can be provided at the mass potential. These components can serve as anodes. Optionally, the system can further comprise an anode. In embodiments, which can be combined with other embodiments described herein, at least one or more of the rotating targets can be electrically connected to a respective independent power source. In particular, each of the rotating targets can be connected to a respective independent power source. For example, the first rotating target can be connected to a first DC power source, the second rotating target can be connected to a second DC power source, and the third rotating target can be connected to a third DC power source.

[0047] In embodiments, for example as shown in Figure 2 The system according to the present disclosure can further comprise a first shield 210 positioned between the first rotating target 110 and the deposition area. The deposition area is in particular understood as the area where the substrate 102 is located during deposition. The system 200 can further comprise a second shield, for example positioned between the second rotating target 130 and the deposition area or between the third rotating target 150 and the deposition area.

[0048] In the depicted embodiment, the first shield 210 comprises a first shield magnet assembly 212. The second shield 230 can comprise a second shield magnet assembly 232 facing the first shield magnet assembly 212.

[0049] Each of the magnetic poles of the first shield magnet assembly facing the second shield magnet assembly 232 can have a polarity opposite to the respective nearest magnetic pole of the second shield magnet assembly 232. In Figure 2 In the depicted embodiment, the generated magnetic field lines between the first shield magnet assembly 212 and the second shield magnet assembly 232 are indicated. The magnetic field in the aperture between the first shield 210 and the second shield 230 can be the field of a magnetic lens. Advantages with respect to the deflection of charged particles can be achieved, in particular as in Figure 1BAs explained in the description of the magnet assembly of the rotating target.

[0050] Figure 3 A system for depositing materials according to an embodiment described herein is shown. A substrate 102 is positioned from a first side surface toward a first rotating target 110. Figure 2 Compared to the depicted system, the system is further configured to deposit material on an additional substrate 302 from a second side opposite to the first side toward the first rotating target 110.

[0051] The depicted system further includes a third shield 330 positioned between the first rotating target 110 and an additional deposition region. The additional deposition region is specifically understood to be the region where an additional substrate 302 will be located during deposition. The system 300 further includes a fourth shield 340 positioned between the second rotating target 130 and the additional deposition region. Each of the third shield 330 and the fourth shield 340 may include at least one shield magnet assembly. The remaining structure of the system 300 may correspond to the above description regarding... Figure 2 The characteristics of the system described.

[0052] According to some embodiments that can be combined with other embodiments described herein, particularly for applications involving large-area deposition, an array of cathodes or cathode pairs can be provided. The array may include two or more cathodes or cathode pairs, such as three, four, five, six, or even more. The array may be disposed within a deposition chamber. The outermost cathode of the array may comprise only one magnet assembly, particularly as an alternative to two magnet assemblies. The magnet assembly is operable such that it faces one of the inner cathodes of the array, particularly the outermost cathode which has no other magnet assembly facing outwards.

[0053] This disclosure further relates to a controller configured to connect to a system for depositing materials. The controller is further configured to control a system that enables the methods described herein to be performed.

[0054] The controller may include a central processing unit (CPU), memory, and, for example, support circuitry. To facilitate control of the system, the CPU may be one of any form of general-purpose computer processor that can be used in an industrial environment to control various components and subprocessors. Memory is coupled to the CPU. Memory or computer-readable media may be one or more readily available memory devices, such as random access memory, read-only memory, floppy disks, hard disks, or any other form of digital storage device, local or remote. Support circuitry may be coupled to the CPU to support the processor in a conventional manner. This circuitry includes caches, power supplies, clock circuits, input / output circuitry systems, and related subsystems, etc.

[0055] The control instructions are typically stored as software routines or programs in a memory. The software routines or programs can also be stored and / or executed by a second CPU located remotely from the hardware controlled by the CPU. According to any of the embodiments of the present disclosure, the software routines or programs, when executed by the CPU, transform a general-purpose computer into a special purpose computer (controller) that controls a system for depositing a material.

[0056] The methods of the present disclosure can be implemented as software routines or programs. At least some of the method operations disclosed herein can be performed via hardware and by a software controller. Thus, the embodiments can be implemented as software on a computer system and as hardware specifically designed to perform the functions described or as a combination of software and hardware. According to embodiments of the present disclosure, a controller can perform or conduct a method of depositing a material on a substrate. The methods described herein can be conducted using a computer program, software, computer software product, and related controller, which can have a CPU, memory, user interface, and input and output devices in communication with corresponding components of a system for depositing a material.

[0057] The present disclosure further relates to a method of depositing a material on a substrate. The material can comprise, for example, any of indium tin oxide and indium zinc oxide. The method comprises sputtering at least one component of the material from a first rotating target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement region in a first direction facing a second rotating target. At least three, in particular exactly three, poles of the first magnet assembly face the first plasma confinement region. The second magnet assembly provides a second plasma confinement region in a second direction facing a third rotating target. At least three, in particular exactly three, poles of the second magnet assembly face the second plasma confinement region.

[0058] In particular in embodiments in which non-reactive sputtering is performed, the material to be deposited on the substrate can be sputtered from any of the first rotating target, the second rotating target, and the third rotating target. This is in particular understood such that particles emitted from a surface of the first rotating target or the second rotating target form the deposited material. In particular in embodiments in which reactive sputtering is performed, particles of a first material can be emitted from a surface of the first rotating target, the second rotating target, or the third rotating target. The particles of the first material can combine with a second material to form the material to be deposited on the substrate. The first material can be understood as a component of the deposited material. A gas surrounding the first rotating target and the second rotating target can comprise the second material.

[0059] In embodiments, the first and second directions deviate from being parallel to the substrate plane by an angle of less than 40°. In particular, the first and second directions can deviate from being parallel to the substrate plane by an angle of less than 30°, 20°, or 10°. In embodiments, the first and second directions deviate from being parallel to the substrate plane by an angle of less than 40°, 30°, or 20° towards the substrate and by an angle of less than 10° away from the substrate.

[0060] According to embodiments described herein, which can be combined with other embodiments described herein, the plasma associated with sputtering is moved relative to each other for depositing material on a substrate.

[0061] Generally, the magnet assemblies can remain stationary during deposition of material on a substrate. In embodiments, the magnet assemblies can be moved relative to each other and / or relative to the substrate (e.g., in an oscillating or back-and-forth manner) during deposition. The uniformity of the deposited layer can be improved, or different deposition characteristics can be provided with increasing film thickness.

[0062] Figure 4 is a diagram illustrating a method of depositing material on a substrate according to embodiments described herein. In block 402, the method 400 comprises adapting a first magnet assembly of a first rotating target such that the first magnet assembly provides a first plasma confinement region in a first direction facing a second rotating target. At least three poles of the first magnet assembly face the first plasma confinement region. In block 404, the method further comprises adapting a second magnet assembly of the first rotating target such that the second magnet assembly provides a second plasma confinement region in a second direction facing a third rotating target. At least three poles of the second magnet assembly face the second plasma confinement region.

[0063] In particular in embodiments in which the magnet assemblies comprise permanent magnets, adapting the magnet assemblies can be understood as providing the magnet assemblies to a specific position within the rotating target, in particular with a specific orientation. In block 406, the method further comprises depositing material on a substrate by sputtering at least one component of the material from the first rotating target.

[0064] Embodiments described herein can be used for display PVD, i.e., sputter deposition on large area substrates in the display market. According to some embodiments, the large area substrate or a respective carrier (wherein the carrier can have a plurality of substrates) can have a size of at least 0.67 m 2 . Typically, the size can be from about 0.67 m 2 (0.73 m x 0.92 m, i.e., 4.5thgeneration) to about 8 m 2 , more typically about 2 m 2 to about 9 m 2 or even up to 12 m2 Typically, the substrate or carrier employing the structures, devices (such as cathode assemblies), and methods according to the embodiments described herein is a large-area substrate as described herein. For example, the large-area substrate or carrier may be a 4.5 generation (which corresponds to approximately 0.67m). 2 Substrate (0.73m × 0.92m), Generation 5 (which corresponds to approximately 1.4m) 2 Substrate (1.1m × 1.3m), Generation 7.5 (which corresponds to approximately 4.29m) 2 Substrate (1.95m × 2.2m), Generation 8.5 (which corresponds to approximately 5.7m) 2 Substrate (2.2m × 2.5m) or even the 10th generation (which corresponds to approximately 8.7m) 2 The substrate is 2.85m × 3.05m. Similarly, even higher generations (such as the 11th and 12th generations) and corresponding substrate areas can be implemented.

[0065] Specifically for research and development purposes, the embodiments described herein can also be used for sputter deposition on substrates having dimensions smaller than, for example, 300 mm × 300 mm or 250 mm × 250 mm. In particular, the substrate may have a dimension of 200 mm × 200 mm. In embodiments, a carrier with a dimension of, for example, 200 mm × 200 mm can be used. The carrier can hold multiple test samples. According to another embodiment, the deposition method described herein can also be used for wafer processing.

[0066] While the foregoing describes some implementation methods, other and further implementation methods are conceived without departing from the basic scope of this disclosure. The scope is defined by the appended claims.

Claims

1. A method of depositing a material on a substrate, the method comprising: sputtering at least one component of the material from a first rotating target having a first magnet assembly and a second magnet assembly, the first magnet assembly providing a first plasma confinement region in a first direction facing a second rotating target, at least three poles of the first magnet assembly facing the first plasma confinement region, the first plasma confinement region providing a closed loop at the first rotating target, and the second magnet assembly providing a second plasma confinement region in a second direction facing a third rotating target, at least three poles of the second magnet assembly facing the second plasma confinement region, the second plasma confinement region providing a closed loop at the first rotating target.

2. The method of claim 1, wherein either of: the second rotating target comprises a third magnet assembly facing the first magnet assembly, wherein each of the poles of the third magnet assembly facing the first magnet assembly has an opposite polarity from a respective nearest pole of the first magnet assembly, or the third rotating target comprises a fourth magnet assembly facing the second magnet assembly, wherein each of the poles of the fourth magnet assembly facing the second magnet assembly has an opposite polarity from a respective nearest pole of the second magnet assembly.

3. The method of claim 1, wherein the first plasma confinement region in the first direction is provided during deposition, and the second plasma confinement region in the second direction is provided during deposition.

4. The method of any one of claims 1-3, wherein the first direction and the second direction are offset from parallel to a substrate plane of the substrate by an angle of less than 40°.

5. The method of claim 4, wherein the first direction and the second direction are offset from parallel to the substrate plane toward the substrate by an angle of less than 40° and away from the substrate by an angle of less than 10°.

6. The method of any one of claims 1-3, wherein the material deposited on the substrate forms a transparent conductive oxide film.

7. The method of claim 6, wherein the material comprises any one of: IZO, ITO, IGZO, or Ag.

8. The method of any of claims 1 to 3, the substrate facing the first rotating target from a first side, the method further comprising: depositing the material on a further substrate facing the first rotating target from a second side opposite the first side.

9. A controller configured to be connectable to a system for depositing a material, and further configured to control the system such that the method of any one of claims 1-3 is performed.

10. A system for depositing a material, the system comprising a first rotating target, a second rotating target, and a third rotating target, the first rotating target comprising a first magnet assembly and a second magnet assembly, the system configured such that during deposition of the material: the first magnet assembly provides a first plasma confinement region in a first direction facing the second rotating target, at least three poles of the first magnet assembly facing the first plasma confinement region, the first plasma confinement region providing a closed loop at the first rotating target, and the second magnet assembly provides a second plasma confinement region in a second direction facing the third rotating target, at least three poles of the second magnet assembly facing the second plasma confinement region, the second plasma confinement region providing a closed loop at the first rotating target. the first magnet assembly provides a first plasma confinement region in a first direction facing the second rotating target, the first plasma confinement region providing a closed loop at the first rotating target, at least three poles of the first magnet assembly facing the first plasma confinement region; and the second magnet assembly provides a second plasma confinement region in a second direction facing the third rotating target, the second plasma confinement region providing a closed loop at the first rotating target, at least three poles of the second magnet assembly facing the second plasma confinement region.

11. The system of claim 10, wherein there is either: the second rotating target includes a third magnet assembly facing the first magnet assembly, wherein each of the poles of the third magnet assembly facing the first magnet assembly has an opposite polarity from a respective nearest pole of the first magnet assembly, or the third rotating target includes a fourth magnet assembly facing the second magnet assembly, wherein each of the poles of the fourth magnet assembly facing the second magnet assembly has an opposite polarity from a respective nearest pole of the second magnet assembly.

12. The system of claim 10 or 11, configured to deposit the material on a substrate, wherein the first direction and the second direction are offset from parallel to a substrate plane of the substrate by an angle of less than 40°.

13. The system of claim 12, wherein the first direction and the second direction are offset from parallel to the substrate plane by an angle of less than 40° toward the substrate and by an angle of less than 10° away from the substrate.

14. The system of claim 10 or 11, wherein the deposited material forms a transparent conductive oxide film.

15. The system of claim 14, wherein the material includes ITO or IZO.

16. A system for depositing a material, the system including a first rotating target, a second rotating target, and a third rotating target, the first rotating target including a first magnet assembly and a second magnet assembly, the system configured such that during deposition of the material: the first magnet assembly provides a first plasma confinement region in a first direction facing the second rotating target, at least three poles of the first magnet assembly facing the first plasma confinement region; and the second magnet assembly provides a second plasma confinement region in a second direction facing the third rotating target, at least three poles of the second magnet assembly facing the second plasma confinement region, the system further including: a first shield positioned between the first rotating target and a deposition region, and a second shield positioned between the second rotating target and the deposition region or between the third rotating target and the deposition region, wherein the first shield includes a first shield magnet assembly, and wherein the second shield includes a second shield magnet assembly facing the first shield magnet assembly.

17. The system of claim 16, wherein each of the pole faces of the first shield magnet assembly facing the second shield magnet assembly has an opposite polarity from the respective nearest pole face of the second shield magnet assembly.

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