Temperature detection circuit, chip and electronic device

Abstract

The application provides a temperature detection circuit, a chip and an electronic device. The temperature detection circuit comprises: a current detection circuit connected with a thermistor; the current detection circuit and a first end of a first processing circuit are connected with a first voltage end; a second end of the first processing circuit is connected with an emitter of a first triode; the current detection circuit, a base of the first triode and a collector are connected with a second voltage end; the first processing circuit comprises n branches, a first end of each branch is connected with the first end of the first processing circuit; the first processing circuit is used for cyclically shifting a pass between one branch selected by a gate and the second end of the first processing circuit in a first half period of a preset first period; the pass between at least two branches selected by the gate and the second end of the first processing circuit is cyclically shifted in a second half period of the preset first period; and a voltage signal between the base and the emitter of the first triode is used as a target voltage signal. The temperature detection circuit has relatively higher temperature detection precision.

Description

Technical Field

[0001] This application relates to the field of temperature detection technology, and in particular to a temperature detection circuit, chip, and electronic device. Background Technology

[0002] Temperature is one of the factors affecting the safe and stable operation of components in electronic devices. To better control the safe and stable operation of components in electronic devices, especially critical components such as CPUs, GPUs, and AI systems, the temperature of these components can be monitored in real time. However, existing temperature detection circuits have relatively low accuracy. Summary of the Invention

[0003] This application provides a temperature detection circuit, chip, and electronic device with relatively higher temperature detection accuracy.

[0004] In a first aspect, an embodiment of this application provides a temperature detection circuit, comprising: a thermistor, a current detection circuit, a first processing circuit, and a first transistor, wherein...

[0005] The current detection circuit is connected to the thermistor; the first terminal of the current detection circuit and the first processing circuit is connected to the first voltage terminal; the second terminal of the first processing circuit is connected to the emitter of the first transistor; the current detection circuit, the base and collector of the first transistor are connected to the second voltage terminal.

[0006] The current detection circuit is used to: detect the first current signal of the thermistor and send the detected first current signal to the first processing circuit.

[0007] The first processing circuit includes: n branches, the first end of each branch being connected to the first end of the first processing circuit; n≥2;

[0008] The first processing circuit is configured to: cyclically shift and select a path between one branch and the second terminal of the first processing circuit within the first half-cycle of a preset first cycle; and cyclically shift and select at least two branches and the second terminal of the first processing circuit within the second half-cycle of the preset first cycle.

[0009] The voltage signal between the base and emitter of the first transistor is used as the target voltage signal for temperature detection by the temperature detection circuit.

[0010] In this circuit, the current signal flowing into the first transistor Q1 is cyclically shifted from one or more of the n branches, rather than flowing into one or more branches in a fixed and repeated manner. This eliminates random errors in the temperature detection circuit and improves the temperature detection accuracy. Moreover, by using timing control, different branch selection methods are used to adjust the current signal flowing into the first transistor Q1 in the two and a half cycles of the first cycle, respectively, to obtain the aforementioned voltage signals VBE1 and VBE2. Then, deltaVBE can be calculated. The circuit structure is simple, so the error of the temperature detection circuit only needs to consider the discrete deviation of the first transistor Q1 itself, which also improves the temperature detection accuracy.

[0011] In one possible implementation, the first processing circuit includes: n branches, and a branch gating circuit, wherein,

[0012] The second ends of the n branches are respectively connected to the input end of the branch selection circuit, and the output end of the branch selection circuit is used as the second end of the first processing circuit.

[0013] The branch selection circuit is used to: cyclically shift and select one branch and the branch between the output terminal of the branch selection circuit during the first half-cycle of the preset first cycle; and cyclically shift and select at least two branches and the branch between the output terminal of the branch selection circuit during the second half-cycle of the preset first cycle.

[0014] In one possible implementation, each of the n branches includes: a first MOS transistor and a second MOS transistor connected in series;

[0015] The source of the first MOSFET is connected to the first end of its branch, and the drain is connected to the source of the second MOSFET. The drain of the second MOSFET is connected to the second end of its branch.

[0016] In one possible implementation, the current detection circuit includes: a second transistor, a third transistor, a power amplifier, a third MOSFET, a fourth MOSFET, a fifth MOSFET, and a sixth MOSFET; wherein,

[0017] The base and collector of the second transistor, and the base and collector of the third transistor are respectively connected to the second voltage terminal;

[0018] The emitter of the second transistor is connected to the first input terminal of the power amplifier;

[0019] The emitter of the third transistor is connected to the first terminal of the thermistor;

[0020] The second input terminal of the power amplifier is connected to the second terminal of the thermistor;

[0021] The output terminal of the power amplifier is connected to the gate of the third MOS transistor and the gate of the fourth MOS transistor.

[0022] The first input terminal of the power amplifier is also connected to the first voltage terminal in sequence through the fifth MOS transistor and the third MOS transistor;

[0023] The second input terminal of the power amplifier is connected to the first voltage terminal in sequence through the sixth MOS transistor and the fourth MOS transistor;

[0024] The gate of the fifth MOS transistor and the gate of the sixth MOS transistor are connected.

[0025] One possible implementation also includes:

[0026] The gate of the third MOS transistor is also connected to the gate of the first MOS transistor in the n branches; the gate of the fifth MOS transistor is also connected to the gate of the second MOS transistor in the n branches.

[0027] One possible implementation also includes:

[0028] The second processing circuit is used to convert the target voltage signal in the first half-cycle into a first digital voltage signal, convert the target voltage signal in the second half-cycle into a second digital voltage signal, and calculate the target temperature detection result based on the first digital voltage signal and the second digital voltage signal.

[0029] In one possible implementation, the second processing circuit includes:

[0030] An analog-to-digital converter is connected to the emitter of the first transistor. The analog-to-digital converter is used to: convert the target voltage signal in the first half-cycle into a first digital voltage signal, and convert the target voltage signal in the second half-cycle into a second digital voltage signal.

[0031] A digital signal processing module is connected to the analog-to-digital converter. The digital signal processing module is used to calculate the target temperature detection result based on the first digital voltage signal and the second digital voltage signal.

[0032] In one possible implementation, the digital signal processing module is specifically used for:

[0033] The first digital voltage signal is accumulated to obtain a first value, and the second digital voltage signal is accumulated to obtain a second value. The target temperature detection result is calculated based on the first value and the second value.

[0034] In one possible implementation, to achieve the calculation of the target temperature detection result based on the first value and the second value, the digital signal processing circuit is specifically used for:

[0035] The first parameter X is calculated using the following formula: X = CODE1 / (CODE2 - CODE1); where CODE1 represents the first value and CODE2 represents the second value.

[0036] The target temperature detection result is calculated based on the first parameter.

[0037] In one possible implementation, the duration of the current signal output by the first processing circuit for each branch is equal to a preset second period; the duration of the current signal output by the first processing circuit for at least two branches is equal to a preset third period.

[0038] In one possible implementation, the second period is equal to the third period.

[0039] In one possible implementation, the sampling period of the analog-to-digital converter, the second period, and the third period are equal.

[0040] In one possible implementation, the digital signal processing module is located in a processor, and the processor and the temperature detection circuit are located in the same electronic device.

[0041] In one possible implementation, the analog-to-digital converter and the digital signal processing module are located in a processor; the processor and the temperature detection circuit are located in the same electronic device.

[0042] Secondly, embodiments of this application provide a temperature sensor chip, including the temperature detection circuit described in any of the first aspects.

[0043] Thirdly, embodiments of this application provide an electronic device, including the temperature detection circuit described in any of the first aspects, or including the temperature sensor chip described in the second aspect. Attached Figure Description

[0044] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0045] Figure 1 A schematic diagram of the structure of an electronic device provided in an embodiment of this application;

[0046] Figure 2 This is a schematic diagram of a temperature detection circuit provided in an embodiment of this application;

[0047] Figure 3 This is a schematic diagram of another structure of the temperature detection circuit provided in an embodiment of this application;

[0048] Figure 4 Provided for the embodiments of this application Figure 3 A timing diagram of a temperature detection circuit is shown.

[0049] Figure 5 Provided for the embodiments of this application Figure 3 Another timing diagram of the temperature detection circuit shown;

[0050] Figure 6 This is another schematic diagram of the temperature detection circuit provided in the embodiments of this application;

[0051] Figure 7 This is a schematic diagram of a fourth structure of the temperature detection circuit provided in the embodiments of this application;

[0052] Figure 8 A fifth structural schematic diagram of the temperature detection circuit provided in the embodiments of this application;

[0053] Figure 9 A schematic diagram of a simulation result provided for an embodiment of this application;

[0054] Figure 10 This is another simulation result diagram provided for an embodiment of this application;

[0055] Figure 11 This is a schematic diagram of another simulation result provided for an embodiment of this application. Detailed Implementation

[0056] The terminology used in the implementation section of this application is for the purpose of explaining specific embodiments of this application only, and is not intended to limit this application.

[0057] In one embodiment provided in this application, the temperature detection scheme includes: detecting the current of a thermistor. Since the change in the thermistor current is related to temperature, the real-time temperature can be determined based on the thermistor current, thereby achieving temperature detection. However, the temperature detection results obtained by the above temperature detection scheme have low accuracy.

[0058] Therefore, this application provides a temperature detection circuit, chip, and electronic device with relatively higher temperature detection accuracy.

[0059] The electronic devices in the embodiments of this application can be, for example, industrial equipment in the industrial field, or devices in the consumer electronics field such as mobile phones, tablet computers (PADs), personal computers (PCs), wearable devices, etc., or medical devices in the medical field, or household appliances such as refrigerators, ovens, air conditioners, etc. in home applications.

[0060] For example: In the industrial sector, many industrial equipment are sensitive to fluctuations in ambient temperature during production, requiring reliable temperature monitoring to ensure stable production line operation; in consumer electronics such as mobile phones, it is necessary to monitor the temperature of core modules such as CPUs, GPUs, and AI within the devices, and then adjust measures such as fan on / off to prevent overheating; in the medical field, some temperature-sensitive medical devices require regular temperature monitoring to extend their lifespan; and in home applications, appliances such as refrigerators, ovens, and air conditioners require internal temperature monitoring for temperature display.

[0061] Figure 1 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application, such as... Figure 1 As shown, it may include: a processor 110, a memory 120, and a temperature sensor 130, wherein,

[0062] The processor 110 may be a system-on-a-chip (SoC), which may include a central processing unit (CPU) and may further include other types of processors, such as a graphics processing unit (GPU), a neural network processing unit (NPU), and an image signal processing unit (ISP).

[0063] The memory 120 is used to store computer programs, and the processor 110 is used to retrieve and run the computer programs from the memory 120.

[0064] The memory 120 may be a read-only memory (ROM), other types of static storage devices capable of storing static information and instructions, random access memory (RAM), or other types of dynamic storage devices capable of storing information and instructions. It may also be an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compressed optical discs, laser discs, optical discs, digital universal optical discs, Blu-ray discs, etc.), magnetic disk storage media, or other magnetic storage devices. Alternatively, it may be any other medium capable of carrying or storing desired program code in the form of instructions or data structures that can be accessed by a computer.

[0065] The processor 110 and memory 120 can be combined into a single processing device, but more commonly they are independent components. The processor 110 executes the program code stored in the memory 120 to achieve the aforementioned functions. In specific implementations, the memory 120 can be integrated into the processor 110, or it can be independent of the processor 110.

[0066] Temperature sensor 130 is used to detect temperature. There can be one or more temperature sensors 130, which can be located at different locations on the electronic device 100, such as near the System on Chip (SoC), near the battery, etc. In some embodiments, the electronic device 100 uses the temperature detected by the temperature sensor 130 to execute a temperature processing strategy. For example, when the temperature reported by the temperature sensor 130 exceeds a threshold, the electronic device 100 reduces the performance of the processor located near the temperature sensor 130 to reduce power consumption and implement thermal protection. In other embodiments, when the temperature is below another threshold, the electronic device 100 heats the battery to prevent abnormal shutdown of the electronic device 100 due to low temperature. In still other embodiments, when the temperature is below yet another threshold, the electronic device 100 boosts the battery's output voltage to prevent abnormal shutdown caused by low temperature.

[0067] Taking a mobile phone as an example, a temperature sensor can be installed on the SoC chip to monitor the temperature of the CPU, GPU, and AI components in real time. The temperature information is converted into a voltage signal, which is then converted into digital voltage information. Based on this digital voltage information, the real-time temperature is calculated. The detected real-time temperature information can be transmitted to the processor, such as the CPU. The CPU executes temperature processing strategies based on this information to precisely control the temperature of the SoC chip, preventing performance degradation due to overheating and enhancing the user experience.

[0068] Temperature sensor 130 can exist in the form of a temperature sensor chip, either integrated into processor 110 or independent of processor 110.

[0069] The temperature detection circuit of the present application embodiment will be described in detail below with reference to the structure of the above-mentioned electronic device.

[0070] Figure 2 This is a schematic diagram of a temperature detection circuit provided in an embodiment of this application, such as... Figure 2 As shown, the temperature detection circuit may include: a thermistor R, a current detection circuit 201, a first processing circuit 202, a first transistor Q1, and a second processing circuit 203; wherein,

[0071] The first and second terminals of the thermistor R are respectively connected to the current detection circuit 201;

[0072] The current detection circuit 201 is connected to the power supply voltage terminal VDD and the digital ground VSS;

[0073] The first terminal P1 of the first processing circuit 202 is connected to the power supply voltage terminal VDD, thereby the current detection circuit 201 and the first terminal P1 of the first processing circuit 202 are interconnected through the power supply voltage terminal VDD.

[0074] The second terminal P2 of the first processing circuit 202 is connected to the emitter of the first transistor Q1;

[0075] The base and collector of the first transistor Q1 are both connected to digital ground VSS;

[0076] The emitter of the first transistor Q1 is connected to the second processing circuit 203.

[0077] The current detection circuit 201 can be used to: detect the first current signal I of the branch where the thermistor R is located, and output the detected first current signal I to the first terminal P1 of the first processing circuit 202.

[0078] The first processing circuit 202 includes n branches, where n is a natural number greater than 1, and the first end of each branch is connected to the first end P1 of the first processing circuit 202.

[0079] The first processing circuit 202 can be used to: cyclically shift and conduct the path between the second end of each branch and the second end P2 of the first processing circuit 202 during the first half-cycle of a preset first cycle, so as to cyclically shift and output the current signal of each branch to the emitter of the first transistor Q1; and cyclically shift and conduct the path between the second end of at least two branches and the second end P2 of the first processing circuit 202 during the second half-cycle of the first cycle, so as to cyclically shift and output the current signal of at least two branches to the emitter of the first transistor Q1.

[0080] It should be noted that if n=2, that is, the first processing circuit 202 includes only 2 branches, then the first processing circuit 202 will always select the path between the second end of the 2 branches and the second end P2 of the first processing circuit 202 during the second half-cycle, that is, always input the current signal of the 2 branches to the emitter of the first transistor Q1.

[0081] The first half-cycle and the second half-cycle are each half of the first cycle, and the first half-cycle and the second half-cycle constitute the first cycle.

[0082] Optionally, the first half-cycle can be a high-level interval in the first cycle, and the second half-cycle can be a low-level interval in the first cycle; or, the first half-cycle can be a low-level interval in the first cycle, and the second half-cycle can be a high-level interval in the first cycle.

[0083] Optionally, during the first half-cycle, the first processing circuit 202 cyclically shifts and connects the second end of each branch with the second end P2 of the first processing circuit 202 according to the second cycle. That is to say, the duration for which the first processing circuit 202 connects the second end of each branch with the second end P2 of the first processing circuit 202 each time is the second cycle.

[0084] Optionally, during the second half-cycle, the first processing circuit 202 cyclically shifts and conducts the path between the second end of at least two branches and the second end P2 of the first processing circuit 202 according to the third cycle. That is to say, the duration for which the first processing circuit 202 conducts the path between the second end of at least two branches and the second end P2 of the first processing circuit 202 each time is the third cycle.

[0085] Optionally, to facilitate subsequent processing, the first cycle can be an integer multiple of the second cycle, and the first cycle can be an integer multiple of the third cycle.

[0086] Optionally, the second period is equal to the third period.

[0087] For example, the frequency corresponding to the first cycle can be 1MHz, and the second and third cycles can be the same, with a corresponding frequency of 1MHz / 8192. Thus, the first half-cycle can include 4096 second cycles, and the second half-cycle can include 4096 third cycles.

[0088] The voltage signal between the base and emitter of the first transistor Q1 can be used as the target voltage signal obtained by the temperature detection circuit in this embodiment of the application for temperature detection. Since the target voltage signal is generated by the first transistor Q1 based on the current signal flowing into the emitter, and the current signal flowing into the emitter of the first transistor Q1 is equal to the first current signal I in the branch where the thermistor R is located, the target voltage signal has a negative correlation with temperature. In other words, the target voltage signal can characterize the temperature.

[0089] The second processing circuit 203 can be used to: convert the aforementioned target voltage signal into a digital voltage signal, and calculate the target temperature detection result based on the digital voltage signal. The target temperature detection result can be a measured actual temperature value, such as 18 degrees Celsius, or it can be temperature information associated with the actual temperature value, such as a value that has a linear relationship with the actual temperature value, etc.

[0090] The second processing circuit 203 is an optional circuit.

[0091] Optionally, the second processing circuit 203 may be specifically used to: for the first cycle, convert the target voltage signal received in the first half cycle into a first digital voltage signal, convert the target voltage signal received in the second half cycle into a second digital voltage signal, accumulate the first digital voltage signal into a first value, accumulate the second digital voltage signal into a second value, and calculate the target temperature detection result corresponding to the first cycle based on the first value and the second value.

[0092] Optionally, the target temperature detection result can be temperature information that has a linear relationship with the actual temperature value. Therefore, the above calculation of the target temperature detection result corresponding to the first cycle based on the first value CODE1 and the second value CODE2 can include:

[0093] Calculate the first parameter X using the following formula: X = CODE1 / (CODE2 - CODE1);

[0094] The second parameter U is calculated based on the first parameter X using the following formula: U = A / (A + X); where A is a constant, and its value varies depending on the chip manufacturing process. In one possible implementation, the value of A can be close to or equal to 18.

[0095] Among them, the second parameter U has a linear relationship with the actual temperature value, and the linearity is good. Therefore, U can be used as the above target temperature detection result to characterize the actual temperature value.

[0096] Optionally, the second processing circuit 203 can further calculate the actual temperature value (i.e. the actual temperature value detected by the temperature detection circuit) based on the second parameter U as described above using the following formula: T = K * U + B, and use the calculated actual temperature value as the target temperature detection result.

[0097] Wherein, K is a constant, the specific value of which is related to the manufacturing process of the temperature sensor chip. K can be obtained through pre-simulation and is set to a fixed value in practical applications. The specific value is not limited in this embodiment. B is a constant, the value of which is related to the manufacturing process of the temperature sensor chip and the temperature range corresponding to the second parameter U. It is used to characterize the absolute temperature offset. In other words, under the same manufacturing process, different temperature ranges can correspond to different B values. The specific value of B is not limited in this embodiment. In one implementation, K = 600 and B = 273.

[0098] Optionally, when the second processing circuit 203 performs the conversion of the target voltage signal to the first digital voltage signal in the first half-cycle, the sampling period used can be equal to the second cycle, so as to sample the target voltage signal in each second cycle; when the second processing circuit 203 performs the conversion of the target voltage signal to the second digital voltage signal in the second half-cycle, the sampling period used can be equal to the third cycle, so as to sample the target voltage signal in each second cycle.

[0099] Continuing with the previous example, if the sampling period, the second period, and the third period are equal, then the first half-cycle includes 4096 second periods. Therefore, the first digital voltage signal obtained in the first half-cycle includes 4096 values, which can be accumulated to obtain the first value. Similarly, the second half-cycle includes 4096 third periods, so the second digital voltage signal obtained in the second half-cycle includes 4096 values, which can also be accumulated to obtain the second value. After that, the target temperature detection result can be calculated according to the above formula.

[0100] The following is an explanation. Figure 2 The working principle of the temperature detection circuit shown.

[0101] The current detection circuit 201 detects the first current signal I in the branch where the thermistor R is located, and inputs the first current signal I into the first terminal of the first processing circuit.

[0102] The first terminal of the first processing circuit 202 is connected to the first terminals of n branches, and the second terminal of the first processing circuit 202 is connected to the emitter of the first transistor Q1. When the first processing circuit 202 selects one branch each time through cyclic shifting, the current signal flowing into the emitter of the first transistor Q1 through that branch is the same as the current signal input to the first terminal of the first processing circuit 202 by the current detection circuit 201, which is the same as the first current signal I of the branch where the thermistor R is located. When the first processing circuit 202 selects multiple branches each time through cyclic shifting, the current signal flowing into the emitter of the first transistor Q1 through multiple branches is the same as the current signal input to the first terminal of the first processing circuit 202 by the current detection circuit 201, which is the same as the first current signal I of the branch where the thermistor R is located.

[0103] Therefore, the voltage signal VBE generated between the base and emitter of the first transistor Q1 is related to the first current signal I. Since the first current signal I is negatively correlated with temperature, the voltage signal VBE is negatively correlated with temperature. The target temperature detection result can be determined based on the voltage signal VBE.

[0104] Figure 2 In the circuit shown, the voltage signal VBE generated between the base and emitter of the first transistor Q1 is negatively correlated with temperature. Different currents flow through the emitter of the first transistor Q1 in the two half-cycles of the first cycle. The voltage signal between the base and emitter of the first transistor Q1 in the first half-cycle is denoted as VBE1, and the voltage signal between the base and emitter of the first transistor Q1 in the second half-cycle is denoted as VBE2. The voltage difference deltaVBE between the voltage signals VBE1 and VBE2 is positively correlated with temperature. Compared with the voltage signals VBE1 and VBE2, the voltage difference deltaVBE has relatively better linearity, thereby improving the temperature detection accuracy of the temperature detection circuit.

[0105] also, Figure 2In the circuit shown, the current signal flowing into the first transistor Q1 is cyclically shifted from one or more of the n branches, rather than repeatedly flowing into one or more branches, thus eliminating random errors in the temperature detection circuit. Furthermore, through timing control, different branch selection methods are used to adjust the current signal flowing into the first transistor Q1 within the two half-cycles of the first cycle, obtaining the aforementioned voltage signals VBE1 and VBE2 respectively. This allows for the calculation of deltaVBE, instead of using two transistors with different branch selection methods to simultaneously input different currents to the emitters of the two transistors and calculating the voltage difference deltaVBE based on the voltage between the base and emitter of the two transistors. This ensures that the error in the temperature detection circuit only needs to consider the dispersion deviation of the first transistor Q1 itself, without considering the dispersion variation between the two different transistors caused by manufacturing process deviations. This significantly reduces the dispersion variation between the two different transistors caused by manufacturing process deviations, improving the temperature detection accuracy of the temperature detection circuit.

[0106] The following is an exemplary description of the specific implementation of the temperature detection circuit in the embodiments of this application.

[0107] like Figure 3 As shown, the current detection circuit 201 may specifically include: transistors Q2 and Q3, MOSFETs Q11 to Q14, and power amplifier A1, wherein...

[0108] The base and collector of transistor Q2, and the base and collector of transistor Q3 are both connected to the first terminal X1 of current detection circuit 201, which is used to connect to digital ground VSS. The emitter of transistor Q2 is connected to the first input terminal of power amplifier A1, and the emitter of transistor Q3 is connected to the second terminal X2 of current detection circuit 201, which is used to connect to the first terminal of the thermistor R. Optionally, as... Figure 3 As shown, the first input terminal of power amplifier A1 can be the non-inverting input terminal of power amplifier A1.

[0109] The second input terminal of power amplifier A1 is connected to the third terminal X3 of current detection circuit 201, and the third terminal X3 of current detection circuit 201 is used to connect to the second terminal of thermistor R1. Optionally, as... Figure 3 As shown, the second input terminal of power amplifier A1 can be the inverting input terminal of power amplifier A1.

[0110] The first input terminal of power amplifier A1 is also connected to the sixth terminal X6 of current detection circuit 201 in sequence through MOSFETs Q13 and Q11. The sixth terminal X6 of current detection circuit 201 is used to connect to the power supply voltage terminal VDD. The second input terminal of power amplifier A1 is connected to the sixth terminal X6 of current detection circuit 201 in sequence through MOSFETs Q14 and Q12.

[0111] The output terminal of power amplifier A1 is connected to the gate of MOSFET Q11 and MOSFET Q12 and the fifth terminal X5 of current detection circuit 201, respectively;

[0112] The gates of MOSFET Q13 and MOSFET Q14 are connected to the fourth terminal X4 of the current detection circuit 201.

[0113] like Figure 3 As shown, taking n=5 as an example, the first processing circuit 202 may specifically include: 5 branches and branch selection circuit;

[0114] In this circuit, the first end of each of the five branches is connected to the second end of the branch via two MOSFETs connected in series. Taking branch 1 as an example, branch 1 may include: the source of MOSFET Q21 is connected to the first end of branch 1, the drain of MOSFET Q21 is connected to the source of MOSFET Q22, and the drain of MOSFET Q22 is connected to the second end of branch 1; the gate of MOSFET Q21 is connected to the fourth terminal P4 of the first processing circuit 202, the fourth terminal P4 of the first processing circuit 202 can be connected to the fifth terminal X5 of the current detection circuit 201; the gate of MOSFET Q22 is connected to the third terminal P3 of the first processing circuit 202, and the third terminal P3 of the first processing circuit 202 can be connected to the fourth terminal X4 of the current detection circuit 201.

[0115] The connection structure of other branches in the first processing circuit 202 can refer to the connection structure of branch 1, and will not be described in detail here.

[0116] The five input terminals of the branch selection circuit are respectively connected to the second terminal of each of the five branches. The output terminal of the branch selection circuit is connected to the second terminal P2 of the first processing circuit 202, so as to connect to the emitter of the first transistor Q1 through the second terminal P2.

[0117] The branch selection circuit can be used to: cyclically shift and select the path between one input terminal and the output terminal of the branch selection circuit during the first half-cycle of the preset first cycle, that is, to select the path between the second terminal of a branch and the emitter of the first transistor Q1; and cyclically shift and select the branches between at least two input terminals and the output terminal of the branch selection circuit during the second half-cycle of the preset first cycle, that is, to select the branches between the second terminal of at least two branches and the emitter of the first transistor.

[0118] Optionally, such as Figure 3As shown, the fifth terminal X5 of the current detection circuit 201 and the fourth terminal of the first processing circuit 202 can be connected by a low-pass filter (LPF) to achieve filtering.

[0119] like Figure 3 As shown, the second processing circuit 203 may include: an ADC and a digital signal processing module, wherein,

[0120] An ADC can be used to convert a received analog voltage signal into a digital voltage signal. Optionally, the ADC can specifically be used to convert a voltage signal received in the first half-cycle of a first cycle into a first digital voltage signal, and a voltage signal received in the second half-cycle into a second digital voltage signal. Optionally, when the ADC performs the conversion from the voltage signal in the first half-cycle to the first digital voltage signal, the sampling period used can be equal to that of the second cycle, so as to sample the target voltage signal in each second cycle; when the ADC performs the conversion from the voltage signal in the second half-cycle to the second digital voltage signal, the sampling period used can be equal to that of the third cycle, so as to sample the target voltage signal in each second cycle.

[0121] The digital signal processing module can be used to calculate the target temperature detection result based on the first digital voltage signal received in the first half-cycle and the second digital voltage signal received in the second half-cycle.

[0122] Optionally, the digital signal processing module can be used to: accumulate the first digital voltage signal received in the first half-cycle to obtain a first value CODE1, accumulate the second digital voltage signal received in the second half-cycle to obtain a second value CODE2, and calculate the target temperature detection result based on the first value CODE1 and the second value CODE2.

[0123] The specific method for the digital signal processing module to calculate the target temperature detection result can be found in the description of the second processing circuit for calculating the target temperature detection result, which will not be repeated here.

[0124] The following combination Figure 4 and Figure 5 The timing diagram shown illustrates Figure 3 The working principle of the temperature detection circuit in the embodiment of this application is shown.

[0125] See Figure 4 and Figure 5 The first clock signal CLK1 is the clock signal used by the branch gating circuit to switch between two different gating modes. One cycle of the first clock signal CLK1 corresponds to the first cycle mentioned above.

[0126] See Figure 4Taking the example of the branch selection circuit selecting the path between the second terminal of a branch and the emitter of the first transistor Q1 during the positive half-cycle of the first clock signal CLK1.

[0127] The second clock signal CLK2 is the clock signal used by the branch gating circuit to perform branch gating.

[0128] During the positive half-cycle of the first clock signal CLK1, in the first cycle of the second clock signal CLK2, the branch selection circuit selects the path between branch 1 and the emitter of the first transistor Q1. In the second cycle, it selects the path between branch 2 and the emitter of the first transistor Q1. In the third cycle, it selects the path between branch 3 and the emitter of the first transistor Q1. In the fourth cycle, it selects the path between branch 4 and the emitter of the first transistor Q1. In the fifth cycle, it selects the path between branch 5 and the emitter of the first transistor Q1. In the sixth to tenth cycles of the second clock signal CLK2, the branch selection circuit re-selects the paths between branches 1 to 5 and the emitter of the first transistor Q1 in sequence. This cycle repeats, ensuring that one branch is selected to connect to the emitter of the first transistor Q1 in each cycle of the second clock signal CLK2, thus ensuring that a current signal from one branch is input to the emitter of the first transistor Q1 in each cycle.

[0129] In this selection mode, the first current signal is always input to the emitter of the first transistor Q1 through one branch, so that a voltage signal VBE can be generated between the base and emitter of the first transistor Q1 based on the first current signal.

[0130] The sampling signal Sample in the ADC has the same frequency and phase as the second clock signal CLK2. Accordingly, the ADC can sample the voltage signal corresponding to the current signal of one branch in each cycle of the sampling signal Sample. The clock signal Trans of the comparator in the ADC has the same frequency and opposite phase as the sampling signal Sample. The sampled voltage signal is quantized at the rising edge of the comparator, thereby converting the voltage signal VBE into the digital voltage signal Data2digital.

[0131] See Figure 5 Taking the path between the second terminal of the branch selection circuit that selects four branches and the emitter of the first transistor Q1 during the negative half-cycle of the first clock signal CLK1 as an example.

[0132] During the negative half-cycle of the first clock signal CLK1, in the first cycle of the second clock signal CLK2, the branch selection circuit selects the path between branches 1 to 4 and the emitter of the first transistor Q1. In the second cycle of the second clock signal CLK2, the branch selection circuit selects the path between branches 1, 2, 3, and 5 and the emitter of the first transistor Q1. In the third cycle of the second clock signal CLK2, the branch selection circuit selects the path between branches 1, 2, 4, and 5 and the emitter of the first transistor Q1. In the fourth cycle of the second clock signal CLK2, the branch selection circuit selects the path between branches 1, 3, 4, and 5 and the emitter of the first transistor Q1. In the fifth cycle of the second clock signal CLK2, the branch selection circuit selects the path between branches 2, 3, 4, and 5 and the emitter of the first transistor Q1. In the sixth to tenth cycles of the second clock signal CLK2, the branch selection circuit repeats the branch selection method in the first to fifth cycles. This cycle is repeated to achieve the cyclic shifting and selection of the path between the four branches and the emitter of the first transistor Q1 according to the cycle of the second clock signal CLK2 in the negative half cycle. This ensures that the current signal of the four branches is input to the emitter of the first transistor Q1 in each cycle. In other words, the first current signal flows into the emitter of the first transistor Q1 through the four branches.

[0133] The sampling signal Sample in the ADC has the same frequency and phase as the second clock signal CLK2. Accordingly, the ADC can sample the voltage signal corresponding to the current signal of one branch in each cycle of the sampling signal Sample. The clock signal Trans of the comparator in the ADC has the same frequency and opposite phase as the sampling signal Sample. The sampled voltage signal is quantized at the rising edge of the comparator, thereby converting the analog voltage signal into the digital voltage signal Data2digital.

[0134] Figure 3In the temperature detection circuit shown, through timing control, the current signal flowing into the first transistor Q1 is cyclically shifted from one or four of the five branches, rather than being fixed and repeated from one or four branches, thereby eliminating the random error of the temperature detection circuit itself. Furthermore, within the two and a half cycles of the first cycle, different branch selection methods are used to adjust the current signal flowing into the first transistor Q1, thereby obtaining the aforementioned voltage signals VBE1 and VBE2. This allows for the calculation of deltaVBE, instead of using two transistors and employing different branch selection methods to simultaneously input different currents to the emitters of the two transistors, and calculating the aforementioned voltage difference deltaVBE based on the voltage between the bases and emitters of the two transistors. This ensures that the error of the temperature detection circuit only needs to consider the dispersion deviation of the first transistor Q1 itself, without needing to consider the dispersion variation between the two different transistors caused by manufacturing process deviations. This significantly reduces the dispersion variation between the two different transistors caused by manufacturing process deviations, thereby improving the temperature detection accuracy of the temperature detection circuit.

[0135] It should be noted that, Figure 3 The first processing circuit of the temperature detection circuit shown is exemplified by having 5 branches. In other embodiments, Figure 3 The number of branches included in the first processing circuit of the temperature detection circuit shown can be expanded to two or more branches; the specific number is not limited in this embodiment. For example... Figure 6 As shown, the first processing circuit of the temperature detection circuit can include two branches. The circuit structure and working principle can be found by referring to... Figure 3 The corresponding explanations will not be elaborated here.

[0136] like Figure 7 As shown, in one embodiment, the current detection circuit 201, the thermistor R, the first processing circuit 202, and the first transistor Q1 in the above-mentioned temperature detection circuit can be located in the temperature sensor chip, and the second processing circuit can be located in the processor. Then, the temperature sensor chip can transmit data to the processor of the electronic device in which the temperature sensor chip is located (e.g., ...). Figure 1 The processor 110 in the chip outputs the target voltage signal, so that the processor can calculate the target temperature detection result based on the target voltage signal. Optionally, the temperature sensor chip can be corresponding to... Figure 1 The temperature detection module in the middle, the processor mentioned above can be Figure 1 The processor of electronic devices.

[0137] like Figure 8As shown, in one embodiment, the current detection circuit 201, thermistor R, first processing circuit 202, first transistor Q1, and second processing circuit 203 in the above-mentioned temperature detection circuit can all be located in the temperature sensor chip. The temperature sensor chip can then calculate the target temperature detection result and send it to the processor of the electronic device where the temperature sensor chip is located (e.g., ...). Figure 1 (Processor 110 in the middle).

[0138] It should be noted that if the second processing circuit 203 includes multiple parts such as ADC and digital signal processing module, the second processing circuit 203 can also be partially located in the processor and partially located in the temperature sensor chip. For example, the ADC is located in the temperature sensor chip and the digital signal processing module is located in the processor.

[0139] See Figure 5 The diagram shows the simulation results of a scheme that uses deltaVBE to calculate the target temperature detection result under the condition of simultaneously receiving the current signal from one branch and the current signal from four branches using two transistors. Monte Carlo simulation shows that, with a single-point correction of 27 degrees, the temperature detection accuracy is only 2.8 degrees. This demonstrates that, under limited manufacturing processes, the dispersion between the two transistors has a significant impact on the temperature detection accuracy.

[0140] See Figure 6 This is a simulation result diagram of the scheme of calculating the target temperature detection result by using deltaVBE under the condition that the temperature detection circuit of this application uses the first transistor to receive the current signal of 1 branch and the current signal of 4 branches respectively according to the timing. Since only one transistor is used, there is only the dispersion deviation of the first transistor itself, and its temperature detection accuracy can be 1.5 degrees.

[0141] See Figure 7 As shown, in Figure 3 In the circuit structure shown, an ADC is used to digitize the voltage signal. Since the ADC is a linear system, no temperature error is introduced as long as the quantization accuracy is greater than 13.5 bits.

[0142] It should be noted that the temperature detection circuit of this application embodiment is not limited by the process in application and can be applied to temperature sensor chips under different processes. For example, the temperature detection circuit of this application embodiment can be used as a circuit in a temperature sensor chip under advanced process (e.g., process below 5nm) or as a circuit in a temperature sensor chip under planar process (e.g., planar process above 55nm).

[0143] In this application embodiment, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent the existence of A alone, A and B simultaneously, or B alone. A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" and similar expressions refer to any combination of these items, including any combination of singular or plural items. For example, at least one of a, b, and c can represent: a, b, c, a and b, a and c, b and c, or a and b and c, where a, b, and c can be single or multiple.

[0144] Those skilled in the art will recognize that the units and algorithm steps described in the embodiments disclosed herein can be implemented using electronic hardware, computer software, or a combination of electronic hardware and software. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0145] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0146] In the several embodiments provided in this application, any function, if implemented as a software functional unit and sold or used as an independent product, can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0147] The above description is merely a specific embodiment of this application. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the protection scope of this application. The protection scope of this application should be determined by the protection scope of the claims.

Claims

1. A temperature detection circuit, characterized in that, include: The thermistor, current detection circuit, first processing circuit, and first transistor, among which, The current detection circuit is connected to the thermistor; the first terminal of the current detection circuit and the first processing circuit is connected to the first voltage terminal; the second terminal of the first processing circuit is connected to the emitter of the first transistor; the current detection circuit, the base and collector of the first transistor are connected to the second voltage terminal. The current detection circuit is used to: detect the first current signal of the thermistor and send the detected first current signal to the first processing circuit. The first processing circuit includes: n branches, the first end of each branch being connected to the first end of the first processing circuit; n≥2; The first processing circuit is configured to: cyclically shift and select a path between one branch and the second terminal of the first processing circuit within the first half-cycle of a preset first cycle; and cyclically shift and select at least two branches and the second terminal of the first processing circuit within the second half-cycle of the preset first cycle. The voltage signal between the base and emitter of the first transistor is used as the target voltage signal for temperature detection by the temperature detection circuit.

2. The circuit according to claim 1, characterized in that, The first processing circuit includes: n branches, and a branch selection circuit, wherein, The second ends of the n branches are respectively connected to the input end of the branch selection circuit, and the output end of the branch selection circuit is used as the second end of the first processing circuit. The branch selection circuit is used to: cyclically shift and select one branch and the branch between the output terminal of the branch selection circuit during the first half-cycle of the preset first cycle; and cyclically shift and select at least two branches and the branch between the output terminal of the branch selection circuit during the second half-cycle of the preset first cycle.

3. The circuit according to claim 2, characterized in that, Each of the n branches includes: a first MOS transistor and a second MOS transistor connected in series; The source of the first MOSFET is connected to the first end of its branch, and the drain is connected to the source of the second MOSFET. The drain of the second MOSFET is connected to the second end of its branch.

4. The circuit according to claim 3, characterized in that, The current detection circuit includes: a second transistor, a third transistor, a power amplifier, a third MOSFET, a fourth MOSFET, a fifth MOSFET, and a sixth MOSFET; wherein, The base and collector of the second transistor, and the base and collector of the third transistor are respectively connected to the second voltage terminal; The emitter of the second transistor is connected to the first input terminal of the power amplifier; The emitter of the third transistor is connected to the first terminal of the thermistor; The second input terminal of the power amplifier is connected to the second terminal of the thermistor; The output terminal of the power amplifier is connected to the gate of the third MOS transistor and the gate of the fourth MOS transistor. The first input terminal of the power amplifier is also connected to the first voltage terminal in sequence through the fifth MOS transistor and the third MOS transistor; The second input terminal of the power amplifier is connected to the first voltage terminal in sequence through the sixth MOS transistor and the fourth MOS transistor; The gate of the fifth MOS transistor and the gate of the sixth MOS transistor are connected.

5. The circuit according to claim 4, characterized in that, Also includes: The gate of the third MOS transistor is also connected to the gate of the first MOS transistor in the n branches; the gate of the fifth MOS transistor is also connected to the gate of the second MOS transistor in the n branches.

6. The circuit according to any one of claims 1 to 5, characterized in that, Also includes: The second processing circuit is used to convert the target voltage signal in the first half-cycle into a first digital voltage signal, convert the target voltage signal in the second half-cycle into a second digital voltage signal, and calculate the target temperature detection result based on the first digital voltage signal and the second digital voltage signal.

7. The circuit according to claim 6, characterized in that, The second processing circuit includes: An analog-to-digital converter is connected to the emitter of the first transistor. The analog-to-digital converter is used to: convert the target voltage signal in the first half-cycle into a first digital voltage signal, and convert the target voltage signal in the second half-cycle into a second digital voltage signal. A digital signal processing module is connected to the analog-to-digital converter. The digital signal processing module is used to calculate the target temperature detection result based on the first digital voltage signal and the second digital voltage signal.

8. The circuit according to claim 7, characterized in that, The digital signal processing module is specifically used for: The first digital voltage signal is accumulated to obtain a first value, and the second digital voltage signal is accumulated to obtain a second value. The target temperature detection result is calculated based on the first value and the second value.

9. The circuit according to claim 8, characterized in that, To achieve the calculation of the target temperature detection result based on the first and second values, the digital signal processing module is specifically used for: The first parameter X is calculated using the following formula: X = CODE1 / (CODE2 - CODE1); where CODE1 represents the first value and CODE2 represents the second value. The target temperature detection result is calculated based on the first parameter.

10. The circuit according to claim 8, characterized in that, The duration of the current signal output by the first processing circuit for each branch is equal to a preset second cycle; the duration of the current signal output by the first processing circuit for at least two branches is equal to a preset third cycle.

11. The circuit according to claim 10, characterized in that, The second period is equal to the third period.

12. The circuit according to claim 10, characterized in that, The sampling period, the second period, and the third period of the analog-to-digital converter are equal.

13. The circuit according to claim 7, characterized in that, The digital signal processing module is located in the processor, and the processor and the temperature detection circuit are located in the same electronic device.

14. The circuit according to claim 7, characterized in that, The analog-to-digital converter and the digital signal processing module are located in the processor; the processor and the temperature detection circuit are located in the same electronic device.

15. A temperature sensor chip, characterized in that, Includes the temperature detection circuit according to any one of claims 1 to 14.

16. An electronic device, characterized in that, It includes the temperature detection circuit according to any one of claims 1 to 14, or the temperature sensor chip according to claim 15.

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