A charge collection method and system

Abstract

The present application provides a charge collection method and system. The method includes: obtaining a semiconductor device to be measured, performing point-by-point scanning on the semiconductor device to be measured using a heavy ion microbeam, and drawing a plan view of the single event effect sensitive region according to the point-by-point scanning results; constructing a multi-sensitive volume structure model based on the plan view of the single event effect sensitive region, performing radiation particle incidence simulation on the multi-sensitive volume structure model, and calculating the first charge collection amount of the radiation particles in each sub-sensitive volume; summing up the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particles incident on the semiconductor device to be measured. The present application can construct a charge collection model for single event effects induced by direct ionization of heavy ions, α particles, etc., and can also construct a charge collection model for single event effects induced by secondary particles such as protons and neutrons. Then, the single event effect charge collection amount can be obtained through the charge collection model, increasing the applicable range of the charge collection model.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor devices, and particularly to a charge collection method and system. Background Art

[0002] The aerospace electronic system is a key link to ensure the smooth progress of aerospace missions. Therefore, its high-reliability and long-life operation in the space environment have become an issue of great concern in the field. There are a large number of charged particles in the space environment, such as heavy ions, protons, etc., which can induce single event effects (SEE) in electronic systems and are one of the important factors causing on-orbit failures of spacecraft. When high-energy charged particles enter a semiconductor device, a high-density electron-hole pair is generated along its incident track due to strong ionization. If the particle track passes through the sensitive volume (SV) of the device, these charges can be quickly collected by the device. When the charge collection amount caused by the incident particle is large enough to exceed the critical charge for maintaining the normal logic state of the circuit, it will cause a data bit flip, thus posing a huge threat to the reliable operation of the aerospace electronic system. Therefore, constructing an accurate single event effect charge collection model and obtaining the charge collection amount caused by various particles incident on the device are of great significance for the single event effect cross-section and on-orbit failure rate prediction of electronic devices.

[0003] Generally, the single event effect charge collection model for heavy ions incident on a device can be constructed by TCAD (Technology Computer Aided Design) numerical simulation method. It should be noted that TCAD numerical simulation simulates the ionization track by defining the spatio-temporal distribution of the excess carrier generation rate, and this method requires clear information such as the particle incident position, incident direction, LET value, and track length as input. However, the position of the nuclear reaction of protons in the device, the types and energies of the secondary particles generated by the nuclear reaction, and their emission directions all have great randomness. Therefore, it is impossible to directly use the TCAD numerical simulation method to construct a charge collection model suitable for proton single event effects.

[0004] In addition, a large number of studies have shown that when particles enter from different positions in the sensitive volume, the dominant charge collection mechanisms are not the same. When the particle track passes through the PN junction or is very close to the PN junction, the charge is mainly collected through the drift mechanism, while when the particle track is far from the PN junction, the charge is mainly collected through the diffusion mechanism. Different collection mechanisms lead to significant differences in the final charge collection amount. In other words, for the same amount of charge, different positions in the sensitive volume have different collection efficiencies. The traditional RPP (Rectangular Parallelepiped, abbreviated as RPP) model sets the sensitive volume as a single parallelepiped, does not consider different charge collection mechanisms spatially, and assumes that all the charges deposited by the incident particles in the sensitive volume can be collected, resulting in the single RPP model being unable to accurately describe the distribution of the sensitive area in the actual device, and thus unable to accurately give the actual charge collection amount of the sensitive node. Summary of the Invention

[0005] In view of the above-mentioned disadvantages of the prior art, the purpose of this application is to provide a charge collection method and system to solve the problems existing in the prior art.

[0006] To achieve the above object and other related objects, this application provides a charge collection method, including the following steps:

[0007] Obtain the semiconductor device to be tested; wherein, the semiconductor device to be tested includes: a semiconductor device with the die exposed and tested through electrical parameters;

[0008] Use a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, and draw a plan view of the single-event effect sensitive area according to the point-by-point scanning results;

[0009] Construct a multi-sensitive volume structure model based on the plan view of the single-event effect sensitive area; wherein, the multi-sensitive volume structure model includes n sub-sensitive volumes, n≥1;

[0010] Perform radiation particle incidence simulation on the multi-sensitive volume structure model, and calculate the first charge collection amount of the radiation particles in each sub-sensitive volume; and,

[0011] Sum up the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particles incident on the semiconductor device to be tested.

[0012] Optionally, the process of using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested and drawing a plan view of the single-event effect sensitive area according to the point-by-point scanning results includes:

[0013] Fix the semiconductor device to be measured on a two-dimensional moving platform, and use a heavy ion microbeam to scan the semiconductor device to be measured point by point, and record the coordinate positions of each scanning point;

[0014] Obtain the single-particle transient current at each coordinate position, and perform time integration on the single-particle transient current at each coordinate position to obtain the corresponding single-particle effect charge collection amount;

[0015] Calculate the average value of all single-particle effect charge collection amounts at each coordinate position, and draw a planar graph of the single-particle effect sensitive area based on the average value.

[0016] Optionally, before performing radiation particle incidence simulation on the multi-sensitive volume structure model, the method further includes:

[0017] Perform heavy ion incidence simulation on the multi-sensitive volume structure model, and calculate the charge deposition amount of the heavy ion in each sub-sensitive volume;

[0018] Obtain the initial value of the charge collection efficiency in each sub-sensitive volume, and calculate the second charge collection amount in each sub-sensitive volume according to the initial value of the charge collection efficiency in each sub-sensitive volume and the charge deposition amount of the heavy ion in each sub-sensitive volume;

[0019] Calibrate the second charge collection amount of each sub-sensitive volume according to the single-particle effect charge collection amount to obtain the charge collection efficiency calibration value; wherein, the charge collection efficiency calibration value is used to calculate the first charge collection amount of the radiation particle in each sub-sensitive volume.

[0020] Optionally, the process of performing radiation particle incidence simulation on the multi-sensitive volume structure model and calculating the first charge collection amount of the radiation particle in each sub-sensitive volume includes:

[0021] Perform radiation particle incidence simulation on the multi-sensitive volume structure model to obtain the charge deposition amount of the radiation particle in each sub-sensitive volume;

[0022] Calculate the first charge collection amount of the radiation particle in each sub-sensitive volume according to the charge collection efficiency calibration value and the charge deposition amount of the radiation particle in each sub-sensitive volume.

[0023] Optionally, the process of constructing a multi-sensitive volume structure model based on the single-particle effect sensitive area planar graph includes:

[0024] Construct a first multi-sensitive volume structure model based on the single-particle effect sensitive area planar graph, wherein the first multi-sensitive volume structure model is a nested structure with n sub-sensitive volumes overlapping; or,

[0025] Construct a second multi-sensitive volume structure model based on the planar graph of the single-event effect sensitive region, where the second multi-sensitive volume structure model is a distributed structure with n sub-sensitive volumes being non-overlapping or partially overlapping.

[0026] Optionally, the process of obtaining the semiconductor device to be tested includes:

[0027] Obtain a raw semiconductor device provided in advance or in real time;

[0028] Use chemical etching or laser etching to remove the front package of the raw semiconductor device to expose the die of the raw semiconductor device;

[0029] Perform electrical parameter tests on the raw semiconductor device with the die exposed, and use the raw semiconductor device that passes the electrical parameter tests as the semiconductor device to be tested.

[0030] Optionally, when performing point-by-point scanning of the semiconductor device to be tested with a heavy ion microbeam and performing heavy ion incidence simulation on the multi-sensitive volume structure model, the same type of heavy ion with the same energy is used.

[0031] Optionally, when performing point-by-point scanning of the semiconductor device to be tested with a heavy ion microbeam, the point-by-point scanning area covers the entire die of the semiconductor device to be tested.

[0032] Optionally, the radiation particles include: heavy ions, α particles, protons, neutrons or electrons.

[0033] This application also provides a charge collection system, which includes:

[0034] A semiconductor device module for obtaining a semiconductor device to be tested; where the semiconductor device to be tested includes: a semiconductor device with an exposed die and passing electrical parameter tests;

[0035] A planar graph module of the single-event effect sensitive region for performing point-by-point scanning of the semiconductor device to be tested with a heavy ion microbeam and drawing a planar graph of the single-event effect sensitive region according to the point-by-point scanning results;

[0036] A multi-sensitive volume structure model module for constructing a multi-sensitive volume structure model according to the planar graph of the single-event effect sensitive region; where the multi-sensitive volume structure model includes n sub-sensitive volumes, n≥1;

[0037] An incidence simulation module for performing radiation particle incidence simulation on the multi-sensitive volume structure model and calculating the first charge collection amount of the radiation particles in each sub-sensitive volume;

[0038] A charge collection module, which is used to sum up the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particle incident on the semiconductor device to be measured.

[0039] As described above, the present application provides a charge collection method and system, which have the following beneficial effects: The present application first obtains a semiconductor device to be measured, then uses a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be measured, and draws a planar graph of the single event effect sensitive area according to the point-by-point scanning results; then constructs a multi-sensitive volume structure model based on the planar graph of the single event effect sensitive area; then performs radiation particle incidence simulation on the multi-sensitive volume structure model, and calculates the first charge collection amounts of the radiation particles in each sub-sensitive volume; finally, sums up the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particle incident on the semiconductor device to be measured. Among them, the semiconductor device to be measured includes: a semiconductor device with an exposed die and tested by electrical parameters; the multi-sensitive volume structure model includes n sub-sensitive volumes, where n≥1. It can be seen that the present application can construct a charge collection model for single event effects induced by direct ionization such as heavy ions and α particles, and can also construct a charge collection model for single event effects induced by secondary particles such as protons and neutrons, so that the applicable range of the charge collection model in the present application is wider. At the same time, the present application calibrates the charge collection efficiency of each sub-sensitive volume through heavy ion microbeam experimental data, greatly improving the model accuracy. In addition, the present application can calculate the charge collection amount in the sub-sensitive volume through a Monte Carlo particle transport simulation tool, and only needs to set the energy and incident angle of the initial incident particle, thus breaking through the limitations of random factors such as the position of the nuclear reaction, the type of secondary particles, and the emission direction. And the present application also considers the difference in charge collection efficiency caused by different charge collection mechanisms inside the sensitive volume. By constructing a multi-sensitive volume model and assigning independent charge collection efficiencies to each sub-sensitive volume, the deficiencies of the single RPP model are made up for. It is equivalent that the present application can provide a single event effect charge collection model, which can be used to calculate the charge collection caused by the ionization of secondary particles such as protons, and at the same time considers the difference in charge collection efficiency at different positions inside the sensitive volume, so that the applicable range of the charge collection model in the present application is wider. Description of the Drawings

[0040] Figure 1 It is a schematic flowchart of the charge collection method provided in an embodiment of the present application;

[0041] Figure 2 It is a schematic flowchart of the charge collection method provided in another embodiment of the present application;

[0042] Figure 3 It is a schematic planar view of the single event effect sensitive area provided in an embodiment of the present application;

[0043] Figure 4 Schematic diagram of a multi-sensitive volume structure model provided in an embodiment of the present application;

[0044] Figure 5 Schematic diagram of the comparison between the charge collection amount calculated by the model and the charge collection amount obtained by the radiation experiment irradiation provided in an embodiment of the present application;

[0045] Figure 6 Schematic diagram of the hardware structure of a charge collection system provided in an embodiment of the present application. Detailed implementation manners

[0046] The following uses specific specific examples to illustrate the implementation manners of the present application. Those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0047] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present application in a schematic manner. Therefore, only the components related to the present application are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0048] Heavy ions refer to atomic nuclei with a mass number greater than 4, that is, ions after the helium nucleus in the periodic table of elements (atoms with an atomic number greater than 2 that have lost electrons). Such as carbon-12, neon-22, calcium-45, iron-56, krypton-84, and uranium-238, etc.

[0049] An α particle is a particle emitted during the decay of some radioactive substances (such as uranium, radium, or some artificial nuclides). It is composed of two neutrons and two protons (helium-4), has a mass 4 times that of a hydrogen atom, can reach a speed of 20,000 kilometers per second, and carries a positive charge.

[0050] Please refer to Figure 1 As shown, this embodiment provides a charge collection method, including the following steps:

[0051] S110, obtain a semiconductor device to be tested; wherein, the semiconductor device to be tested includes: a semiconductor device with an exposed die and tested through electrical parameters;

[0052] S120. Use a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, and draw a planar graph of the single event effect sensitive area according to the point-by-point scanning results. As an example, when using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested in this embodiment, the point-by-point scanning area covers the entire die of the semiconductor device to be tested.

[0053] S130. Construct a multi-sensitive volume structure model based on the planar graph of the single event effect sensitive area; wherein, the multi-sensitive volume structure model includes n sub-sensitive volumes, n≥1;

[0054] S140. Perform radiation particle incidence simulation on the multi-sensitive volume structure model, and calculate the first charge collection amount of the radiation particles in each sub-sensitive volume. As an example, the radiation particles in this embodiment include: heavy ions, α particles, protons, neutrons or electrons.

[0055] S150. Sum up the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particles incident on the semiconductor device to be tested.

[0056] It can be seen from this that in this embodiment, the charge collection efficiency of each sub-sensitive volume is calibrated through heavy ion microbeam experimental data, greatly improving the model accuracy. At the same time, in this embodiment, the charge collection amount in the sub-sensitive volume can be calculated by using a Monte Carlo particle transport simulation tool, and only the energy and incident angle of the initial incident particles need to be set, thus breaking through the limitations of random factors such as the position of nuclear reactions, the types of secondary particles, and the emission directions. In addition, this embodiment also considers the difference in charge collection efficiency caused by different charge collection mechanisms inside the sensitive volume. By constructing a multi-sensitive volume model and assigning independent charge collection efficiencies to each sub-sensitive volume, the deficiencies of the single RPP model are made up for. That is to say, this embodiment can construct a charge collection model for single event effects induced by direct ionization of heavy ions, α particles, etc., and can also construct a charge collection model for single event effects induced by secondary particles such as protons and neutrons, so that the applicable range of the charge collection model in the embodiment is wider. Equivalently, this embodiment can provide a single event effect charge collection model, which can be used to calculate the charge collection caused by secondary particle ionization such as protons, and at the same time considers the difference in charge collection efficiency at different positions inside the sensitive volume, so that the applicable range of the charge collection model in this embodiment is wider.

[0057] In an exemplary embodiment, the process of using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested and drawing a planar graph of the single-event effect sensitive region based on the point-by-point scanning results includes: fixing the semiconductor device to be tested on a two-dimensional moving platform, using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, and recording the coordinate positions of each scanning point; obtaining the single-event transient current at each coordinate position, performing time integration on the single-event transient current at each coordinate position to obtain the corresponding single-event effect charge collection amount; calculating the average value of all single-event effect charge collection amounts at each coordinate position, and drawing a planar graph of the single-event effect sensitive region based on the average value. As an example, in this embodiment, a longitudinally bipolar transistor device with an exposed die and passing electrical parameter tests can be used as the semiconductor device to be tested, and then it is fixed on a two-dimensional moving platform. The die is scanned point by point using a 110 MeV Cl ion microbeam, and the coordinate positions of each scanning point are recorded. The single-event transient current at each coordinate position is recorded by an oscilloscope, and the transient current is integrated with respect to time to obtain the single-event effect charge collection amount. Then, the average value of all single-event effect charge collection amounts at each coordinate position is calculated, and a planar graph of the single-event effect sensitive region is drawn based on the average value. Among them, the planar graph of the single-event effect sensitive region drawn in this embodiment is as shown in Figure 3 shown. In Figure 3 , Q100 represents the region where the charge collection amount is equal to 0 pC; Q200 represents the region where the charge collection amount is greater than 0 pC and less than or equal to 0.25 pC; Q300 represents the region where the charge collection amount is greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents the region where the charge collection amount is greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents the region where the charge collection amount is greater than 0.75 pC and less than or equal to 1 pC; Q600 represents the region where the charge collection amount is greater than 1 pC and less than or equal to 1.25 pC; Q700 represents the region where the charge collection amount is greater than 1.25 pC and less than or equal to 1.5 pC; Q800 represents the region where the charge collection amount is greater than 1.5 pC.

[0058] In an exemplary embodiment, before performing radiation particle incidence simulation on the multi-sensitive volume structure model, this embodiment may further include: performing heavy ion incidence simulation on the multi-sensitive volume structure model, calculating the charge deposition amount of the heavy ions in each sub-sensitive volume; obtaining the initial value of the charge collection efficiency in each sub-sensitive volume, and calculating the second charge collection amount in each sub-sensitive volume according to the initial value of the charge collection efficiency in each sub-sensitive volume and the charge deposition amount of the heavy ions in each sub-sensitive volume; calibrating the second charge collection amount of each sub-sensitive volume according to the single event effect charge collection amount to obtain the charge collection efficiency calibration value; wherein, the charge collection efficiency calibration value is used to calculate the first charge collection amount of the radiation particles in each sub-sensitive volume. As an example, this embodiment may use a Monte Carlo particle transport simulation tool to perform heavy ion incidence multi-sensitive volume structure simulation to obtain the charge deposition amount D' in each sub-sensitive volume i , and calculate the charge collection amount Q' in each sub-sensitive volume i , where Q' i =D' i ×α' i ; then calibrate the second charge collection amount of each sub-sensitive volume according to the single event effect charge collection amount to obtain the charge collection efficiency calibration value α i ; wherein, the charge collection efficiency calibration value α i is used to calculate the first charge collection amount of the radiation particles in each sub-sensitive volume

[0059] In an exemplary embodiment, the process of performing radiation particle incidence simulation on the multi-sensitive volume structure model and calculating the first charge collection amount of the radiation particles in each sub-sensitive volume includes: performing radiation particle incidence simulation on the multi-sensitive volume structure model to obtain the charge deposition amount of the radiation particles in each sub-sensitive volume; calculating the first charge collection amount of the radiation particles in each sub-sensitive volume according to the charge collection efficiency calibration value and the charge deposition amount of the radiation particles in each sub-sensitive volume. As an example, this embodiment may use a Monte Carlo particle transport simulation tool to perform specified radiation particle incidence sensitive volume structure simulation to obtain the charge deposition amount D of the specified radiation particles in each sub-sensitive volume i , and calculate the charge collection amount Q in each sub-sensitive volume i , where Q i =D i ×α i ; sum up the charge collection amounts in each sub-sensitive volume to obtain the charge collection amount Q caused by the specified radiation particles incident on the semiconductor device under test, where

[0060]

[0061] In an exemplary embodiment, the process of constructing a multi-sensitive volume structure model based on the plan view of the single-event effect sensitive region includes: constructing a first multi-sensitive volume structure model based on the plan view of the single-event effect sensitive region, where the first multi-sensitive volume structure model is a nested structure with n sub-sensitive volumes overlapping; or constructing a second multi-sensitive volume structure model based on the plan view of the single-event effect sensitive region, where the second multi-sensitive volume structure model is a distributed structure with n sub-sensitive volumes non-overlapping or partially overlapping.

[0062] In an exemplary embodiment, the process of obtaining a semiconductor device to be tested includes: obtaining a raw semiconductor device provided in advance or in real time; removing the front package of the raw semiconductor device using chemical etching or laser etching to expose the die of the raw semiconductor device; performing electrical parameter tests on the raw semiconductor device with the die exposed, and using the raw semiconductor device that passes the electrical parameter tests as the semiconductor device to be tested.

[0063] In an exemplary embodiment, when performing point-by-point scanning of the semiconductor device to be tested using a heavy ion microbeam and performing heavy ion incidence simulation on the multi-sensitive volume structure model, the same type of heavy ion with the same energy is used.

[0064] According to the above description, in another exemplary embodiment of the present application, as Figure 2 shown, this embodiment further provides a charge collection method, including the following steps:

[0065] I. Pretreatment. It includes:

[0066] 1.1) Providing a semiconductor device;

[0067] 1.2) Removing the front package of the semiconductor device in step 1.1) to expose the die. As an example, in this embodiment, chemical etching or laser etching can be used to remove the front package of the device.

[0068] 1.3) Performing electrical parameter tests on the device obtained in step 1.2), and screening out abnormal and failed devices;

[0069] II. Determining the single-event effect sensitive region. It includes:

[0070] 2.1) Fixing the preprocessed device obtained in 1.3) on a two-dimensional moving platform, performing point-by-point scanning of its die using a heavy ion microbeam, and recording the coordinate positions and charge collection amounts of each scanning point. As an example, the charge collection amount is obtained by integrating the single-event transient current over time.

[0071] 2.2) Based on the charge collection amount data at each coordinate position obtained in step 2.1), draw a planar diagram of the single-particle sensitive area. As an example, the charge collection amount data at each coordinate position is the average value of the charge collection amounts of all single-particle effect events at that position.

[0072] III. Construct a sensitive volume structure model. It includes:

[0073] 3.1) According to the planar diagram of the single-particle sensitive area obtained in step 2.2), use a Monte Carlo particle transport simulation tool to construct a multi-sensitive volume structure model, and the model includes n (n≥1) sub-sensitive volumes; as an example, the Monte Carlo particle transport simulation tool in this embodiment can be Geant4; the multi-sensitive volume structure model can be a nested structure with n sub-sensitive volumes overlapping, or a distributed structure with n sub-sensitive volumes non-overlapping or partially overlapping.

[0074] 3.2) Set the initial value α′ of the charge collection efficiency of each sub-sensitive volume i ;

[0075] IV. Charge collection efficiency calibration. It includes:

[0076] 4.1) Use a Monte Carlo particle transport simulation tool to carry out heavy ion incident multi-sensitive volume structure simulation, and the heavy ion type and energy are the same as those in step 2.1). Obtain the charge deposition amount D′ in each sub-sensitive volume i , and calculate the charge collection amount Q′ in each sub-sensitive volume i , where Q′ i = D′ i × α′ i ;

[0077] 4.2) Calibrate the charge collection efficiency of each sub-sensitive volume in step 3.2) according to the heavy ion microbeam experiment results obtained in step 2.1) to determine the charge collection efficiency calibration value α i ;

[0078] V. Charge collection amount calculation based on the calibration model. It includes:

[0079] 5.1) Use a Monte Carlo particle transport simulation tool to carry out specified radiation particle incident sensitive volume structure simulation, obtain the charge deposition amount D of the specified radiation particle in each sub-sensitive volume i , and calculate the charge collection amount Q in each sub-sensitive volume i , where Q i = D i × α i ;

[0080] Optionally, the radiation particle can be a heavy ion, an α particle, a proton, a neutron or an electron;

[0081] 5.2) Sum the charge collection amounts in each sub-sensitive volume to obtain the charge collection amount Q caused by the incident of the specified radiation particle on the semiconductor device described in 1.1), where

[0082] According to the above description, in a specific embodiment, taking a vertical bipolar transistor device as a specific example, the corresponding charge collection method includes the following steps:

[0083] I. Pretreatment.

[0084] 1.1) Provide a vertical bipolar transistor device;

[0085] 1.2) Use chemical etching to remove the front package of the bipolar transistor device in step 1.1) to expose the die;

[0086] 1.3) Perform electrical parameter tests on the device obtained in step 1.2), and screen out abnormal and failed devices;

[0087] II. Determine the single-event effect sensitive region.

[0088] 2.1) Fix the preprocessed device obtained in 1.3) on a two-dimensional moving platform, use a 110 MeV Cl ion microbeam to scan the die point by point and record the coordinate positions of each scan point. Record the single-event transient current at each coordinate position through an oscilloscope, and integrate the transient current with respect to time to obtain the single-event effect charge collection amount;

[0089] 2.2) According to the charge collection amount data at each coordinate position obtained in step 2.1), calculate the average value of the charge collection amounts of all single-event events at each coordinate position, and draw a plan view of the single-event sensitive region, as Figure 3 shown. In Figure 3 , Q100 represents the region where the charge collection amount is equal to 0 pC; Q200 represents the region where the charge collection amount is greater than 0 pC and less than or equal to 0.25 pC; Q300 represents the region where the charge collection amount is greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents the region where the charge collection amount is greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents the region where the charge collection amount is greater than 0.75 pC and less than or equal to 1 pC; Q600 represents the region where the charge collection amount is greater than 1 pC and less than or equal to 1.25 pC; Q700 represents the region where the charge collection amount is greater than 1.25 pC and less than or equal to 1.5 pC; Q800 represents the region where the charge collection amount is greater than 1.5 pC.

[0090] III. Construct a sensitive volume structure model.

[0091] 3.1) Based on the single-particle sensitive region plan view obtained in step 2.2), use the Geant4 Monte Carlo particle transport simulation tool to construct a multi-layer nested sensitive volume structure model. The model consists of 4 sub-sensitive volumes, namely SV1, SV2, SV3, and SV4, as shown in Figure 4 shown;

[0092] 3.2) Set the initial values of the charge collection efficiency of each sub-sensitive volume, α′1, α′2, α′3, α′4;

[0093] IV. Charge collection efficiency calibration.

[0094] 4.1) Use the Geant4 Monte Carlo particle transport tool to conduct simulations of 110 MeV Cl ions incident on the multi-sensitive volume structure, obtain the charge depositions D′1, D′2, D′3, D′4 in each sub-sensitive volume, and calculate the charge collections Q′1, Q′2, Q′3, Q′4 in each sub-sensitive volume; where Q′ i = D′ i ×α′ i ;

[0095] 4.2) Calibrate the charge collection efficiency of each sub-sensitive volume in step 3.2) according to the heavy ion microbeam experiment results obtained in step 2.1), and determine that the charge collection efficiency calibration values α1, α2, α3, α4 are 75%, 27%, 15%, and 2.6% respectively;

[0096] V. Calculation of charge collection based on the calibration model.

[0097] 5.1) Use the Monte Carlo particle transport tool to conduct simulations of 60 MeV protons incident on the sensitive volume structure, obtain the charge depositions D1, D2, D3, D4 of protons in each sub-sensitive volume, and calculate the charge collections Q1, Q2, Q3, Q4 in each sub-sensitive volume, where Q i = D i ×α i ;

[0098] 5.2) Sum the charge collections in each sub-sensitive volume to obtain the charge collection Q caused by 60 MeV protons incident on the semiconductor device described in 1.1), where

[0099] To verify the accuracy of the above model, the single-particle charge collection model constructed through this embodiment was compared with the 60 MeV proton single-particle event cross-section obtained from the irradiation experiment, as shown in Figure 5 shown. The two are in good agreement, proving that an accurate single-particle effect charge collection model can be constructed through this embodiment.

[0100] In summary, the present application provides a charge collection method. First, a semiconductor device to be tested is obtained. Then, a heavy ion microbeam is used to perform point-by-point scanning on the semiconductor device to be tested, and a planar graph of the single-event effect sensitive region is drawn based on the point-by-point scanning results. Next, a multi-sensitive volume structure model is constructed based on the planar graph of the single-event effect sensitive region. Then, radiation particle incidence simulation is performed on the multi-sensitive volume structure model, and the first charge collection amount of the radiation particles in each sub-sensitive volume is calculated. Finally, the first charge collection amounts in each sub-sensitive volume are summed to obtain the charge collection amount of the radiation particles incident on the semiconductor device to be tested. Among them, the semiconductor device to be tested includes: a semiconductor device with an exposed die and passing electrical parameter tests; the multi-sensitive volume structure model includes n sub-sensitive volumes, where n≥1. It can be seen that this method can construct a charge collection model for single-event effects induced by direct ionization of heavy ions, α particles, etc., and can also construct a charge collection model for single-event effects induced by secondary particles such as protons and neutrons, thereby making the charge collection model in this method have a wider application range. At the same time, this method calibrates the charge collection efficiency of each sub-sensitive volume through heavy ion microbeam experimental data, greatly improving the model accuracy. In addition, this method can calculate the charge collection amount in the sub-sensitive volume through a Monte Carlo particle transport simulation tool, and only needs to set the energy and incident angle of the initial incident particles, thereby breaking through the limitations of random factors such as the position of the nuclear reaction, the type of secondary particles, and the emission direction. Moreover, this method also considers the difference in charge collection efficiency caused by different charge collection mechanisms inside the sensitive volume. By constructing a multi-sensitive volume model and assigning independent charge collection efficiencies to each sub-sensitive volume, the deficiencies of the single RPP model are made up for. It is equivalent that this method can provide a single-event effect charge collection model, which can be used to calculate the charge collection caused by the ionization of secondary particles such as protons, and at the same time considers the difference in charge collection efficiency at different positions inside the sensitive volume, thereby making the charge collection model in this method have a wider application range.

[0101] As Figure 6 shown, the present application also provides a charge collection system, and the system includes:

[0102] A semiconductor device module 610, configured to obtain a semiconductor device to be tested; among them, the semiconductor device to be tested includes: a semiconductor device with an exposed die and passing electrical parameter tests;

[0103] A planar graph module 620 of the single-event effect sensitive region, configured to use a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, and draw a planar graph of the single-event effect sensitive region based on the point-by-point scanning results; as an example, in this embodiment, when using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, the point-by-point scanning area covers the entire die of the semiconductor device to be tested.

[0104] A multi-sensitive volume structure model module 630 is configured to construct a multi-sensitive volume structure model according to the plan view of the single event effect sensitive region; wherein, the multi-sensitive volume structure model includes n sub-sensitive volumes, and n≥1;

[0105] An incident simulation module 640 is configured to perform radiation particle incident simulation on the multi-sensitive volume structure model and calculate the first charge collection amount of the radiation particles in each sub-sensitive volume;

[0106] A charge collection module 650 is configured to sum up the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particles incident on the semiconductor device under test.

[0107] It can be seen that in this embodiment, the charge collection efficiency of each sub-sensitive volume is calibrated through the heavy ion microbeam experiment data, greatly improving the model accuracy. At the same time, in this embodiment, the charge collection amount in the sub-sensitive volume can be calculated by using the Monte Carlo particle transport simulation tool, and only the energy and incident angle of the initial incident particle need to be set, thus breaking through the limitations of random factors such as the nuclear reaction position, secondary particle type, and emission direction. In addition, this embodiment also considers the charge collection efficiency difference caused by different charge collection mechanisms inside the sensitive volume. By constructing a multi-sensitive volume model and assigning independent charge collection efficiencies to each sub-sensitive volume, the deficiencies of the single RPP model are made up for. That is to say, this embodiment can construct a charge collection model for single event effects induced by direct ionization of heavy ions, α particles, etc., and can also construct a charge collection model for single event effects induced by secondary particles such as protons and neutrons, so that the applicable range of the charge collection model in this embodiment is wider. This embodiment can provide a single event effect charge collection model, which can be used to calculate the charge collection caused by secondary particle ionization such as protons, and at the same time considers the charge collection efficiency difference at different positions inside the sensitive volume, so that the applicable range of the charge collection model in this embodiment is wider.

[0108] In an exemplary embodiment, the process of using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested and drawing a planar graph of the single-event effect sensitive area based on the point-by-point scanning results includes: fixing the semiconductor device to be tested on a two-dimensional moving platform, using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, and recording the coordinate positions of each scanning point; obtaining the single-event transient current at each coordinate position, performing time integration on the single-event transient current at each coordinate position to obtain the corresponding single-event effect charge collection amount; calculating the average value of all single-event effect charge collection amounts at each coordinate position, and drawing a planar graph of the single-event effect sensitive area based on the average value. As an example, in this embodiment, a longitudinally bipolar transistor device with a die exposed and passing electrical parameter tests can be used as the semiconductor device to be tested, and then it is fixed on a two-dimensional moving platform, and a 110 MeV Cl ion microbeam is used to perform point-by-point scanning on its die and record the coordinate positions of each scanning point. The single-event transient current at each coordinate position is recorded by an oscilloscope, the transient current is integrated with respect to time to obtain the single-event effect charge collection amount, then the average value of all single-event effect charge collection amounts at each coordinate position is calculated, and a planar graph of the single-event effect sensitive area is drawn based on the average value. Among them, the planar graph of the single-event effect sensitive area drawn in this embodiment is as Figure 3 shown. In Figure 3 , Q100 represents the area where the charge collection amount is equal to 0 pC; Q200 represents the area where the charge collection amount is greater than 0 pC and less than or equal to 0.25 pC; Q300 represents the area where the charge collection amount is greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents the area where the charge collection amount is greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents the area where the charge collection amount is greater than 0.75 pC and less than or equal to 1 pC; Q600 represents the area where the charge collection amount is greater than 1 pC and less than or equal to 1.25 pC; Q700 represents the area where the charge collection amount is greater than 1.25 pC and less than or equal to 1.5 pC; Q800 represents the area where the charge collection amount is greater than 1.5 pC.

[0109] In an exemplary embodiment, before performing radiation particle incidence simulation on the multi-sensitive volume structure model, this embodiment may further include: performing heavy ion incidence simulation on the multi-sensitive volume structure model, calculating the charge deposition amount of the heavy ions in each sub-sensitive volume; obtaining the initial value of the charge collection efficiency in each sub-sensitive volume, and calculating the second charge collection amount in each sub-sensitive volume according to the initial value of the charge collection efficiency in each sub-sensitive volume and the charge deposition amount of the heavy ions in each sub-sensitive volume; calibrating the second charge collection amount of each sub-sensitive volume according to the single particle effect charge collection amount to obtain the charge collection efficiency calibration value; wherein, the charge collection efficiency calibration value is used to calculate the first charge collection amount of the radiation particles in each sub-sensitive volume. As an example, this embodiment may use a Monte Carlo particle transport simulation tool to perform heavy ion incidence multi-sensitive volume structure simulation to obtain the charge deposition amount D' in each sub-sensitive volume i , and calculate the charge collection amount Q' in each sub-sensitive volume i , where Q' i = D' i × α' i ; then calibrate the second charge collection amount of each sub-sensitive volume according to the single particle effect charge collection amount to obtain the charge collection efficiency calibration value α i ; wherein, the charge collection efficiency calibration value α i is used to calculate the first charge collection amount of the radiation particles in each sub-sensitive volume

[0110] In an exemplary embodiment, the process of performing radiation particle incidence simulation on the multi-sensitive volume structure model and calculating the first charge collection amount of the radiation particles in each sub-sensitive volume includes: performing radiation particle incidence simulation on the multi-sensitive volume structure model to obtain the charge deposition amount of the radiation particles in each sub-sensitive volume; calculating the first charge collection amount of the radiation particles in each sub-sensitive volume according to the charge collection efficiency calibration value and the charge deposition amount of the radiation particles in each sub-sensitive volume. As an example, this embodiment may use a Monte Carlo particle transport simulation tool to perform specified radiation particle incidence sensitive volume structure simulation to obtain the charge deposition amount D of the specified radiation particles in each sub-sensitive volume i , and calculate the charge collection amount Q in each sub-sensitive volume i , where Q i = D i × α i ; sum the charge collection amounts in each sub-sensitive volume to obtain the charge collection amount Q caused by the specified radiation particles incident on the semiconductor device under test, where

[0111]

[0112] In an exemplary embodiment, the process of constructing a multi-sensitive volume structure model based on the planar graph of the single-event effect sensitive region includes: constructing a first multi-sensitive volume structure model based on the planar graph of the single-event effect sensitive region, where the first multi-sensitive volume structure model is a nested structure with n sub-sensitive volumes overlapping; or constructing a second multi-sensitive volume structure model based on the planar graph of the single-event effect sensitive region, where the second multi-sensitive volume structure model is a distributed structure with n sub-sensitive volumes non-overlapping or partially overlapping.

[0113] In an exemplary embodiment, the process of obtaining a semiconductor device to be tested includes: obtaining an original semiconductor device provided in advance or in real time; removing the front package of the original semiconductor device by chemical etching or laser etching to expose the die of the original semiconductor device; performing electrical parameter tests on the original semiconductor device with the die exposed, and using the original semiconductor device that passes the electrical parameter tests as the semiconductor device to be tested.

[0114] In an exemplary embodiment, when performing point-by-point scanning of the semiconductor device to be tested with a heavy ion microbeam and performing heavy ion incidence simulation on the multi-sensitive volume structure model, the same type of heavy ion with the same energy is used.

[0115] According to the above description, in a specific embodiment, taking a vertical bipolar transistor device as a specific example, the corresponding charge collection system can perform the following steps:

[0116] I. Pretreatment.

[0117] 1.1) Provide a vertical bipolar transistor device;

[0118] 1.2) Remove the front package of the bipolar transistor device in step 1.1) by chemical etching to expose the die;

[0119] 1.3) Perform electrical parameter tests on the device obtained in step 1.2), and screen out abnormal and failed devices;

[0120] II. Determine the single-event effect sensitive region.

[0121] 2.1) Fix the preprocessed device obtained in 1.3) on a two-dimensional moving platform, use a 110 MeV Cl ion microbeam to perform point-by-point scanning on its die and record the coordinate positions of each scanning point. Record the single-event transient current at each coordinate position through an oscilloscope, and integrate the transient current with respect to time to obtain the single-event effect charge collection amount;

[0122] 2.2) According to the charge collection amount data at each coordinate position obtained in step 2.1), calculate the average value of the charge collection amounts of all single-event events at each coordinate position, and draw a planar graph of the single-event sensitive region, such asFigure 3 as shown in Figure 3 , Q100 represents the region where the charge collection amount is equal to 0 pC; Q200 represents the region where the charge collection amount is greater than 0 pC and less than or equal to 0.25 pC; Q300 represents the region where the charge collection amount is greater than 0.25 pC and less than or equal to 0.5 pC; Q400 represents the region where the charge collection amount is greater than 0.5 pC and less than or equal to 0.75 pC; Q500 represents the region where the charge collection amount is greater than 0.75 pC and less than or equal to 1 pC; Q600 represents the region where the charge collection amount is greater than 1 pC and less than or equal to 1.25 pC; Q700 represents the region where the charge collection amount is greater than 1.25 pC and less than or equal to 1.5 pC; Q800 represents the region where the charge collection amount is greater than 1.5 pC.

[0123] III. Constructing a sensitive volume structure model.

[0124] 3.1) According to the single-particle sensitive region plan view obtained in step 2.2), use the Geant4 Monte Carlo particle transport simulation tool to construct a multi-layer nested sensitive volume structure model. The model consists of 4 sub-sensitive volumes, namely SV1, SV2, SV3, and SV4, as Figure 4 shown;

[0125] 3.2) Set the initial values of the charge collection efficiency of each sub-sensitive volume, α′1, α′2, α′3, α′4;

[0126] IV. Charge collection efficiency calibration.

[0127] 4.1) Use the Geant4 Monte Carlo particle transport tool to conduct a simulation of 110 MeV Cl ions incident on the multi-sensitive volume structure, obtain the charge depositions D′1, D′2, D′3, D′4 in each sub-sensitive volume, and calculate the charge collections Q′1, Q′2, Q′3, Q′4 in each sub-sensitive volume; where Q′ i = D′ i ×α′ i ;

[0128] 4.2) Calibrate the charge collection efficiency of each sub-sensitive volume in step 3.2) according to the heavy ion microbeam experiment results obtained in step 2.1), and determine that the charge collection efficiency calibration values α1, α2, α3, α4 are 75%, 27%, 15%, and 2.6% respectively;

[0129] V. Calculation of charge collection amount based on the calibrated model.

[0130] 5.1) Use the Monte Carlo particle transport tool to carry out the simulation of 60 MeV proton incident on the sensitive volume structure, obtain the charge deposition amounts D1, D2, D3, D4 of protons in each sub-sensitive volume, and calculate the charge collection amounts Q1, Q2, Q3, Q4 in each sub-sensitive volume, where Q i = D i × α i ;

[0131] 5.2) Sum up the charge collection amounts in each sub-sensitive volume to obtain the charge collection amount Q caused by the 60 MeV proton incident on the semiconductor device described in 1.1), where

[0132] To verify the accuracy of the above model, the single-particle charge collection model constructed by this embodiment and the single-particle event cross-section of 60 MeV protons obtained from the irradiation experiment are compared, as Figure 5 shown. The two have good consistency, proving that an accurate single-particle effect charge collection model can be constructed through this embodiment.

[0133] In summary, the present application provides a charge collection system. First, a semiconductor device to be measured is obtained. Then, a heavy ion microbeam is used to perform point-by-point scanning on the semiconductor device to be measured, and a planar graph of the single-event effect sensitive region is drawn according to the point-by-point scanning results. Next, a multi-sensitive volume structure model is constructed based on the planar graph of the single-event effect sensitive region. Then, radiation particle incidence simulation is performed on the multi-sensitive volume structure model, and the first charge collection amount of the radiation particles in each sub-sensitive volume is calculated. Finally, the first charge collection amounts in each sub-sensitive volume are summed to obtain the charge collection amount of the radiation particles incident on the semiconductor device to be measured. Among them, the semiconductor device to be measured includes: a semiconductor device with an exposed die and tested through electrical parameters; the multi-sensitive volume structure model includes n sub-sensitive volumes, where n≥1. It can be seen that this system can construct a charge collection model for single-event effects induced by direct ionization of heavy ions, α particles, etc., and can also construct a charge collection model for single-event effects induced by secondary particles such as protons and neutrons, thereby making the applicable range of the charge collection model in this system wider. At the same time, this system calibrates the charge collection efficiency of each sub-sensitive volume through heavy ion microbeam experimental data, greatly improving the model accuracy. In addition, this system can calculate the charge collection amount in the sub-sensitive volume through a Monte Carlo particle transport simulation tool, and only needs to set the energy and incident angle of the initial incident particles, thus breaking through the limitations of random factors such as the nuclear reaction position, secondary particle type, and emission direction. And this system also considers the difference in charge collection efficiency caused by different charge collection mechanisms inside the sensitive volume. By constructing a multi-sensitive volume model and assigning independent charge collection efficiencies to each sub-sensitive volume, it makes up for the deficiencies of the single RPP model. Equivalent to this system can provide a single-event effect charge collection model, which can be used to calculate the charge collection caused by the ionization of secondary particles such as protons, and at the same time considers the difference in charge collection efficiency at different positions inside the sensitive volume, thereby making the applicable range of the charge collection model in this system wider.

[0134] It should be noted that the charge collection system provided in the above embodiment and the charge collection method provided in the above embodiment belong to the same concept. The specific ways in which each module and unit perform operations have been described in detail in the method embodiment, and will not be repeated here. In practical applications, the charge collection system provided in the above embodiment can, according to needs, allocate the above functions to different functional modules, that is, divide the internal structure of the system into different functional modules to complete all or part of the functions described above. This is not limited here either. Therefore, the present application effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0135] The above embodiments are only illustrative of the principles and effects of the present application and are not intended to limit the present application. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present application should still be covered by the claims of the present application.

[0136] The structures, ratios, sizes, etc. shown in the drawings in this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the limiting conditions under which the present application can be implemented. Therefore, they do not have a substantial technical meaning. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects that the present application can produce and the purposes that can be achieved, should still fall within the scope that can be covered by the technical content disclosed in the present application. At the same time, the terms such as "upper", "lower", "left", "right", "middle", and "one" cited in this specification are only for the convenience of clear narration and are not used to limit the scope under which the present application can be implemented. The change or adjustment of their relative relationships, without substantial change in the technical content, should also be regarded as the scope under which the present application can be implemented.

[0137] It should be understood that although the terms first, second, third, etc. may be used in the embodiments of the present application to describe preset ranges, etc., these preset ranges should not be limited to these terms. These terms are only used to distinguish the preset ranges from each other. For example, without departing from the scope of the embodiments of the present application, the first preset range can also be referred to as the second preset range, and similarly, the second preset range can also be referred to as the first preset range.

Claims

1. A charge collection method, characterized in that, The method includes the following steps: Obtain a semiconductor device to be tested; wherein, the semiconductor device to be tested includes: a semiconductor device with an exposed die and tested through electrical parameters; Use a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, and draw a planar graph of the single event effect sensitive area according to the point-by-point scanning results; Construct a multi-sensitive volume structure model based on the planar graph of the single event effect sensitive area; wherein, the multi-sensitive volume structure model includes n sub-sensitive volumes, n≥1; Perform radiation particle incidence simulation on the multi-sensitive volume structure model, and calculate the first charge collection amount of the radiation particle in each sub-sensitive volume; and, Sum up the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particle incident on the semiconductor device to be tested; Before performing radiation particle incidence simulation on the multi-sensitive volume structure model, the method further includes: performing heavy ion incidence simulation on the multi-sensitive volume structure model, calculating the charge deposition amount of the heavy ion in each sub-sensitive volume; obtaining the initial value of the charge collection efficiency in each sub-sensitive volume, and calculating the second charge collection amount in each sub-sensitive volume according to the initial value of the charge collection efficiency in each sub-sensitive volume and the charge deposition amount of the heavy ion in each sub-sensitive volume; calibrating the second charge collection amount of each sub-sensitive volume according to the single event effect charge collection amount to obtain the charge collection efficiency calibration value; wherein, the charge collection efficiency calibration value is used to calculate the first charge collection amount of the radiation particle in each sub-sensitive volume; Wherein, the process of performing radiation particle incidence simulation on the multi-sensitive volume structure model and calculating the first charge collection amount of the radiation particle in each sub-sensitive volume includes: performing radiation particle incidence simulation on the multi-sensitive volume structure model to obtain the charge deposition amount of the radiation particle in each sub-sensitive volume; calculating the first charge collection amount of the radiation particle in each sub-sensitive volume according to the charge collection efficiency calibration value and the charge deposition amount of the radiation particle in each sub-sensitive volume.

2. The charge collection method according to claim 1, wherein The process of using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested and drawing a planar graph of the single event effect sensitive area according to the point-by-point scanning results includes: Fix the semiconductor device to be tested on a two-dimensional moving platform, and use a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, and record the coordinate positions of each scanning point; Obtain the single event transient current at each coordinate position, and perform time integration on the single event transient current at each coordinate position to obtain the corresponding single event effect charge collection amount; Calculate the average value of all single event effect charge collection amounts at each coordinate position, and draw a planar graph of the single event effect sensitive area based on the average value.

3. The charge collection method according to claim 1 or 2, wherein The process of constructing a multi-sensitive volume structure model based on the planar graph of the single event effect sensitive area includes: Construct a first multi-sensitive volume structure model based on the planar graph of the single event effect sensitive area, wherein the first multi-sensitive volume structure model is a nested structure with n sub-sensitive volumes overlapping; or, Construct a second multi-sensitive volume structure model based on the plan view of the single-event effect sensitive region, where the second multi-sensitive volume structure model is a distributed structure with n sub-sensitive volumes that do not overlap or partially overlap.

4. The charge collection method according to claim 1 or 2, characterized in that The process of obtaining the semiconductor device to be tested includes: Obtain the original semiconductor device provided in advance or in real time; Use chemical etching or laser etching to remove the front package of the original semiconductor device, so that the die of the original semiconductor device is exposed; Perform electrical parameter tests on the original semiconductor device with the die exposed, and use the original semiconductor device that passes the electrical parameter tests as the semiconductor device to be tested.

5. The charge collection method according to claim 1, characterized in that, When using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested and performing heavy ion incidence simulation on the multi-sensitive volume structure model, use the same type of heavy ions with the same energy.

6. The charge collection method according to claim 1 or 2, characterized in that, When using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested, the point-by-point scanning area covers the entire die of the semiconductor device to be tested.

7. The charge collection method according to claim 1 or 2, characterized in that The radiation particles include: heavy ions, α particles, protons, neutrons or electrons.

8. A charge collection system for the charge collection method according to any one of claims 1 to 7, characterized in that, The system includes: A semiconductor device module for obtaining a semiconductor device to be tested; where the semiconductor device to be tested includes: a semiconductor device with an exposed die and passing electrical parameter tests; A single-event effect sensitive region plan view module for using a heavy ion microbeam to perform point-by-point scanning on the semiconductor device to be tested and drawing a plan view of the single-event effect sensitive region based on the point-by-point scanning results; A multi-sensitive volume structure model module for constructing a multi-sensitive volume structure model according to the plan view of the single-event effect sensitive region; where the multi-sensitive volume structure model includes n sub-sensitive volumes, n≥1; An incidence simulation module for performing radiation particle incidence simulation on the multi-sensitive volume structure model and calculating the first charge collection amount of the radiation particles in each sub-sensitive volume; A charge collection module for summing the first charge collection amounts in each sub-sensitive volume to obtain the charge collection amount of the radiation particles incident on the semiconductor device to be tested.

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