Composite graded layer gallium nitride power transistor

By introducing a gradient layer and a modulation island structure into GaN-based power transistors, the problem of poor reverse conduction characteristics of traditional GaN-based junction field-effect transistors is solved, achieving low turn-on voltage drop and high withstand voltage capability, thereby improving the power efficiency and reliability of the device.

CN116207097BActive Publication Date: 2026-05-29XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XIDIAN UNIV
Filing Date
2023-03-08
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing silicon-based power switching devices cannot meet the requirements of high temperature, high voltage, high frequency, and high power density. Traditional GaN-based junction field-effect transistors have poor reverse conduction characteristics, resulting in large turn-on voltage drop, large leakage current, low breakdown voltage, and low power efficiency.

Method used

A composite graded-layer gallium nitride power transistor is designed. By setting first and second graded layers and modulation islands in the drift layer, reverse conduction characteristics and high voltage withstand capability are achieved. Gallium nitride, silicon, diamond or silicon carbide materials are used, and epitaxial processes and ion implantation technology are combined to form a multilayer structure.

Benefits of technology

It achieves reverse conduction with low turn-on voltage drop, reduces leakage current in the turn-off state, improves breakdown voltage and threshold voltage, and enhances device integration and process compatibility.

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Abstract

The application discloses a kind of compound gradual layer gallium nitride power transistor and its manufacturing method, mainly solve the existing power switch device bidirectional conduction characteristic is poor, leading to the cost of its used system is high, power efficiency is low.The bottom includes: drain, substrate layer, drift layer, channel layer, N + Type layer and source, the drift layer in the two sides of the channel layer is equipped with first gradual layer, its interval is less than the width of channel layer, and its upper portion is equipped with gate, drift layer upper central is equipped with modulation island pole, the drift layer below modulation island pole is equipped with n block second gradual layer at equal interval, the first gradual layer is composed of first gradual P type layer and first gradual N type layer, and the second gradual layer is composed of second gradual P type layer and second gradual N type layer.The application reduces reverse conduction opening voltage drop, increases on current, and the leakage current is small when blocking, withstanding voltage is high, with good bidirectional conduction characteristic, can be used as power switch device.
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