Semiconductor microcavity laser array

Abstract

The semiconductor microcavity laser array provided by the disclosure comprises a control end integrated by a square microcavity for generating an optical signal, a processing end integrated by a square microcavity for compensating loss of the optical signal, a waveguide for directly connecting the control end and the processing end to form an array and realize transmission of the optical signal, an electrical isolation groove arranged between the control end and the processing end, and an output waveguide for realizing output of the optical signal. The semiconductor microcavity laser array is grown on an edge-emitting AlGaInAs / InP epitaxial wafer, and the epitaxial wafer is composed of an InP substrate, a growth buffer layer, upper and lower limiting layers, upper and lower waveguide layers, an active layer, a transition layer, an ohmic contact layer and a top protective layer. The semiconductor microcavity laser array does not need secondary epitaxy and complex integration mode, has simple manufacturing process and low cost, has high reconfigurability and scalability, is further expanded through cascading of basic element structures, realizes super-area integration and performs complex computing tasks.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of optical computing and semiconductor lasers, and more particularly, to a semiconductor microcavity laser array. BACKGROUND

[0002] The rapid development of information technology has driven the increasing demand for ultrafast and ultra-low energy consumption computing. At present, replacing electrons with photons as the carrier of information transmission and processing has the advantages of high speed, low energy consumption and large capacity, while the overall size of the traditional photonic computing network based on the von Neumann architecture is large, and the transmission loss is large, which limits the low energy consumption transmission. Moreover, due to the limitation of Moore's law, the existing electronic computing has been difficult to meet the growing demand for data information processing.

[0003] Logical operation is the core of all computing, therefore, implementing optical logic gate operation plays an important role in the field of optical computing. The reported optical logic gates at present largely rely on the precise control of input optical signals, including phase difference, polarization and intensity. However, due to the complexity and difficulty of these precise controls, there may be inherent instability and low intensity contrast of two output optical logic states. If further considering the cumbersome equipment and complex system required by these controls, the miniaturization of optical logic gates will become more difficult.

[0004] At present, semiconductor lasers have a wide range of applications in the fields of optical interconnection and on-chip integrated photon applications. The integrated semiconductor lasers are mostly a group of semiconductor laser arrays that are combined by multimode interference couplers for signal transmission and processing, which need to be mode-selected based on gratings, such as distributed feedback DFB laser arrays and distributed Bragg reflection DBR lasers. However, the preparation process of these schemes is relatively complex, including regrowing additional materials on the gratings, and using high-resolution lithography to ensure low-order gratings. Therefore, the integrated lasers prepared by using such preparation process have low yield and relatively high cost. SUMMARY

[0005] In view of the above problems, the present disclosure provides a semiconductor microcavity laser array to solve the above problems.

[0006] The semiconductor microcavity laser array comprises: a control end integrated by square microcavities, used for generating an optical signal; a processing end integrated by square microcavities, used for compensating loss of the optical signal; a waveguide, used for directly connecting the control end and the processing end to form an array and realize transmission of the optical signal; an electrical isolation groove, arranged between the control end and the processing end; and an output waveguide, used for realizing output of the optical signal. The semiconductor microcavity laser array is grown on an AlGaInAs / InP epitaxial wafer composed of an InP substrate, a growth buffer layer, upper and lower confinement layers, upper and lower waveguide layers, an active layer, a transition layer, an ohmic contact layer, and a top protective layer.

[0007] According to the embodiment of the present disclosure, the mode field distribution of the square microcavity has both symmetry and antisymmetry, and two waveguides with symmetry are introduced to realize output of in-phase optical signals and anti-phase optical signals.

[0008] According to the embodiment of the present disclosure, the square microcavities are all active cavities and are all covered by electrodes.

[0009] According to the embodiment of the present disclosure, the control end excites symmetric mode electrodes and antisymmetric mode electrodes according to the field distribution design of symmetric modes and antisymmetric modes, to generate optical signals of specific modes.

[0010] According to the embodiment of the present disclosure, the square microcavities can be integrated in an unlimited number of units to perform complex computing tasks.

[0011] According to the embodiment of the present disclosure, the electrical isolation groove is formed by etching the ohmic contact layer, to control the control end and the processing end to be respectively biased with a current, and realize electrical isolation between the control end and the processing end.

[0012] According to the embodiment of the present disclosure, the output waveguide comprises a first end face and a second end face, the first end face is connected with the processing end, and the second end face is a cleaved surface, that is, an output end, used for realizing output of the optical signal.

[0013] According to the embodiment of the present disclosure, the material of the substrate is InP.

[0014] According to the embodiment of the present disclosure, the active layer is an AlGalnAs multi-quantum well structure.

[0015] According to the embodiment of the present disclosure, the waveguide is a strip structure.

[0016] The above-mentioned at least one technical solution adopted in the embodiment of the present disclosure can achieve the following beneficial effects:

[0017] (1) The semiconductor microcavity laser array provided by the present disclosure can perform parallel operation and double processing when performing all-optical calculation, has high reconfigurability and scalability, and can be further expanded by cascading basic element structures to realize super-area integration and perform more complex calculation tasks.

[0018] (2) The semiconductor microcavity laser array provided by the present disclosure has simple integration mode, simple manufacturing process, low cost, high yield and high reliability. Based on the same epitaxial wafer and simple integrated unit structure, the integration difficulty is greatly reduced, the land space and manufacturing cost are saved, and miniaturization and integration are facilitated.

[0019] (3) The semiconductor microcavity laser array provided by the present disclosure takes a square microcavity as an integrated unit, is composed of a control end, a processing end and an output end, and the control end and the processing end are directly connected by a waveguide, without the need for additional technology to realize direct integration of the laser, so that the preparation process is simple, convenient to operate and low in cost.

[0020] (4) The semiconductor microcavity laser array provided by the present disclosure can realize low-threshold current density lasing at the control end and the processing end, which is beneficial to realizing low-loss all-optical calculation near the threshold. BRIEF DESCRIPTION OF DRAWINGS

[0021] The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments of the present disclosure, taken in conjunction with the accompanying drawings, in which:

[0022] Figure 1 A three-dimensional structure schematic diagram of the semiconductor microcavity laser array provided by the embodiment of the present disclosure is schematically shown;

[0023] Figure 2 A planar structure schematic diagram of the semiconductor microcavity laser array provided by the embodiment of the present disclosure is schematically shown;

[0024] Figure 3 A three-dimensional structure schematic diagram of the square microcavity of the semiconductor microcavity laser array provided by the embodiment of the present disclosure is schematically shown;

[0025] Figure 4a A diagram showing the variation of the mode quality factor of a square microcavity with an edge length of 15 microns with the wavelength of 1520-1560 nm simulated by the finite element method is schematically shown;

[0026] Figure 4b A diagram showing the variation of the mode quality factor of a square microcavity with an edge length of 15 microns with the wavelength of 1545-1560 nm simulated by the finite element method is schematically shown;

[0027] Figure 5Fig. 1 schematically shows the mode field distribution of symmetric mode (SM) and anti-symmetric mode (ASM) of a square microcavity with edge length of 15 microns simulated by finite element method;

[0028] Figure 6 Fig. 2 schematically shows a schematic diagram of a semiconductor microcavity laser array according to an embodiment of the present disclosure;

[0029] Figure 7 Fig. 3 schematically shows a specific operation process of all-optical operation of a semiconductor microcavity laser array according to an embodiment of the present disclosure;

[0030] Figure 8 Fig. 4 schematically shows a schematic diagram of a P-plane electrode layer according to an embodiment of the present disclosure;

[0031] Figure 9 Fig. 5 schematically shows a scanning electron microscope image of a semiconductor microcavity laser array after inductively coupled plasma (ICP) etching according to an embodiment of the present disclosure;

[0032] Figure 10a Fig. 6 schematically shows a power-current curve diagram of a semiconductor microcavity laser array when TEC temperature is 293K and threshold current is 16mA according to an embodiment of the present disclosure;

[0033] Figure 10b Fig. 7 schematically shows a power-current curve diagram of a semiconductor microcavity laser array when TEC temperature is 293K and threshold current is 19mA according to an embodiment of the present disclosure.

[0034] Legend of reference signs:

[0035] 1-square microcavity; 2-control terminal; 3-processing terminal; 4-waveguide; 5-electrical isolation groove; 6-anti-symmetric mode electrode; 7-symmetric mode electrode; 8-P-plane electrode layer; 9-output terminal. DETAILED DESCRIPTION

[0036] To make the objectives, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below with reference to specific embodiments and drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present disclosure.

[0037] The terms used herein are only used to describe specific embodiments, and are not intended to limit the present disclosure. The terms "comprise", "contain" and the like used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0038] In the present disclosure, unless specifically defined otherwise and limited in the specification, the terms "mount", "connect", "connection", "fixed", and the like, are to be construed broadly and are used in a non-limiting sense, for example, can be fixed connections, or can be detachably connected, or can be integrated; can be mechanical connection, or can be electrical connection or can be in communication with each other; can be direct connection, or can be indirect connection through an intermediate medium, or can be internal communication of two elements or interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present disclosure can be understood according to the specific circumstances.

[0039] In the description of the present disclosure, it should be understood that the terms "longitudinal", "length", "circumferential", "front", "back", "left", "right", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present disclosure and simplifying the description, and do not indicate or imply that the subsystems or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present disclosure.

[0040] Throughout the drawings, the same elements are denoted by the same or similar reference numerals. When it can cause confusion in understanding the present disclosure, the conventional structure or configuration will be omitted. And the shape, size, positional relationship of the components in the drawings do not reflect the true size, proportion and actual positional relationship. In addition, in the claims, any reference symbol located between parentheses should not be construed as a limitation on the claims.

[0041] Similarly, in order to simplify the present disclosure and help understand one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present disclosure, various features of the present disclosure are sometimes grouped together in a single embodiment, figure or description thereof. The description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. In the specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0042] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "multiple" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0043] As shown in Figure 1 , Figure 1 A three-dimensional structure schematic diagram of a semiconductor microcavity laser array is schematically shown, the semiconductor microcavity laser array comprises: a control end 2 for generating an optical signal; a processing end 3 for compensating for the loss of the optical signal; a waveguide 4 for directly connecting the control end 2 and the processing end 3 to form an array to realize the transmission of the optical signal; an electrical isolation groove 5 arranged between the control end 2 and the processing end 3; an output waveguide for realizing the output of the optical signal; and the semiconductor microcavity laser array takes a square microcavity 1 as an integrated unit, and the control end 2 and the processing end 3 are also integrated by the square microcavity 1.

[0044] Specifically, the square microcavity 1 constituting the control end 2 and the processing end 3, the waveguide 4 and the output waveguide 9 all undergo a deep etching process with a depth of 4.6 microns on an epitaxial wafer, and all include: a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer. The P-face electrode layer 8 is grown on the cavity layer of the square microcavity 1. In the embodiment of the present disclosure, only one photoetching is needed for the cavity layer, and no secondary epitaxy is needed, so the process is simple and the production cost is saved. At the same time, the control end 2 and the processing end 3 are integrated in the same device and grown on the same epitaxial wafer, which can effectively save the floor space and production cost.

[0045] In the embodiment of the present disclosure, the electrical isolation groove 5 is formed by etching the ohmic contact layer, which is used to control the control end 2 and the processing end 3 to be able to add bias current respectively, and realizes the electrical isolation between the control end 2 and the processing end 3. Further, the output waveguide includes a first end face and a second end face, the first end face is connected with the processing end 3, and the second end face is a cleaved face, i.e. the output end 9, which is used to realize the output of the optical signal.

[0046] Further, the material of the substrate is InP, the active layer is an AlGalnAs multi-quantum well structure, and the waveguide 4 is a strip structure.

[0047] In the embodiment of the present disclosure, the square microcavity 1 is taken as the integrated unit of the semiconductor microcavity laser array, and different connection waveguides 4 are introduced for direct integration, and the integration mode is flexible. Compared with the disc microcavity, the mode field distribution of the square microcavity 1 has anisotropy, the field distribution of the fundamental mode is stronger at the midpoint of each side of the microcavity and weaker at the corner area, and the direct connection of the waveguide 4 at the vertex of the square microcavity 1 can not only ensure the quality factor of the mode, but also realize directional output, so as to easily realize the integration of the semiconductor microcavity laser.

[0048] The mode field distribution of the square microcavity 1 has symmetry and anti-symmetry, and two waveguides 4 with symmetry are introduced to realize the common output of in-phase optical signals and anti-phase optical signals. Specifically, the semiconductor laser array can realize all-optical logic calculation through mode control, which lays the foundation for more complex optical signal processing functions. At the same time, by further expanding the basic element structure, super-area integration can be realized and more complex calculation tasks can be performed, which has important significance for reconfigurability and scalability in photonic integration and optical computing.

[0049] Figure 2 The planar structure schematic diagram of the semiconductor microcavity laser array provided by the embodiment of the present disclosure is schematically shown, Figure 3 The three-dimensional structure schematic diagram of the square microcavity 1 of the semiconductor microcavity laser array provided by the embodiment of the present disclosure is schematically shown. It can be known from Figure 1 、 Figure 2 and Figure 3 that the square microcavity 1 in the embodiment of the present disclosure is a square microcavity 1 with the same size, and further, the square microcavity 1 integrated with the control end 2 can generate optical signals with different symmetries. The square microcavity 1 in each integrated unit can generate two columns of optical signals, and the optical signals of adjacent integrated units interfere in the connecting waveguide 4 and then enter the processing end 3 for the same optical signal and signal processing as the control end 2, and finally the optical signal output is performed through the output end. Among them, the square microcavity 1 is an active cavity and is covered by an electrode, and the square microcavity 1 can be integrated with an infinite number of units for performing complex calculation tasks.

[0050] Figure 4a The diagram of the variation of the quality factor of the mode of the square microcavity with an edge length of 15 microns with the wavelength of 1520-1560 nm simulated by the finite element method is schematically shown; Figure 4b The diagram of the variation of the quality factor of the mode of the square microcavity with an edge length of 15 microns with the wavelength of 1545-1560 nm simulated by the finite element method is schematically shown. It can be known from Figure 4a that when the quality factor of the fundamental mode can be kept above 8.7x10 3 , it is beneficial to realize low-threshold lasing of the semiconductor microcavity. It can be known from Figure 4b that when the quality factor of the fundamental mode can be kept above 9.1x10 3 , it is beneficial to realize low-threshold lasing of the semiconductor microcavity laser array.

[0051] Specifically, the quality factor of the square microcavity 1 as an integrated unit affects the quality factor of the whole semiconductor microcavity laser array. The higher the quality factor, the smaller the loss of the cold cavity, and the easier it is to realize low-threshold lasing, which is beneficial to realize low-loss all-optical calculation near the threshold.

[0052] Figure 5 The diagram schematically illustrates the mode field distribution of a symmetric mode (SM) and an antisymmetric mode (ASM) of a square microcavity 1 with a side length of 15 micrometers, simulated using the finite element method. The strongest field distribution of the symmetric mode is located in the corner region, while the strongest field distribution of the antisymmetric mode is located in four triangular regions far from the corners. The intensity distribution of modes with different symmetries provides direction for the design of patterned electrodes. By designing patterned electrodes, modes with specific symmetry characteristics can be excited, which is beneficial for mode switching.

[0053] In this embodiment of the disclosure, the control terminal 2 designs and excites the symmetric mode electrode 7 and the antisymmetric mode electrode 6 according to the field distribution of the symmetric mode and the antisymmetric mode, so as to generate optical signals of a specific mode. Figure 6 A schematic diagram illustrating the principle of a semiconductor microcavity laser array according to an embodiment of the present disclosure is shown. Figure 6 As shown, control terminal 2 can generate optical signals when a bias current is applied. Each integrated unit can excite two different modes: symmetric mode and antisymmetric mode. Each integrated unit can output two optical signals, with phase as the logic output value. Specifically, if the control mode is symmetric mode, the two output optical signals are in phase, denoted as 1 and 1 respectively; if the control mode is antisymmetric mode, the two output optical signals are out of phase, denoted as 0 and 1 respectively. Each square microcavity 1, as an integrated unit, has the same size and structure, so ideally, the generated optical signals have the same frequency. Furthermore, the optical signals of the same frequency generated by adjacent integrated units interfere in the same waveguide 4 and are then transmitted to processing terminal 3. When a logic 0 optical signal and a logic 1 optical signal meet, they are two out of phase signals, and after interference, the logic signal is 0; when a logic 1 optical signal and a logic 1 optical signal meet, they are two in phase signals, and after interference, the logic signal remains 1. When the optical signal is output from the processing terminal 3 through the waveguide 4, it undergoes the same processing as the control terminal 2, and finally outputs a logic signal from the output terminal. Therefore, in the 4×4 semiconductor microcavity laser array provided in this embodiment, the optical signal can be simultaneously subjected to parallel computing and dual processing, exhibiting high reconfigurability and scalability. Furthermore, it can be further expanded through cascaded basic element structures to achieve super-area integration and perform more complex computational tasks.

[0054] In the embodiments of the present disclosure, it is assumed that the logic values of the optical signals in the waveguide 4 before interference occur in the order of 0, 10, 10, 11 and 1 when the excitation modes of the integrated units in the control end 2 are in the order of anti-symmetry mode (AS), anti-symmetry mode (AS), anti-symmetry mode (AS) and symmetry mode (S) respectively, the logic values of the optical signals transmitted to the processing end 3 after interference occur in the order of 0, 0, 1 and 1, the logic values of the optical signals before interference occur in the waveguide 4 in the order of 0, 10, 10, 11 and 1 again, and the logic values output from the output end are 0, 0, 1, 1 and 1. The control end 2 includes four integrated units, there are 16 excitation modes, and there are 9 output logic values, such as 11111, 01111, 10111, 11011, 01011, 10011, 00111, 00011 and 11111. The specific operation process is as shown in Figure 7

[0055] Figure 8 A schematic diagram of the P-face electrode layer 8 provided by the embodiments of the present disclosure is shown.

[0056] In order to test the lasing of the semiconductor microcavity laser array near the threshold, sawtooth-shaped electrodes are arranged according to the shape of the square microcavity 1 and cover each unit, the distance between the sawteeth is 7 microns, the control end 2 and the processing end 3 adopt the parallel electrode mode, and each unit can be applied with voltage. At the same time, in order to ensure that the units at each end can apply the same current and reduce the complexity of experimental testing, the overall electrode can be designed in the control end 2 or the processing end 3. The semiconductor microcavity laser array includes two electrodes, and the size of the rectangular electrode is 120 microns x 70 microns. This design can reduce the number of probes and current sources used when applying power, simplify the experimental operation, and facilitate the testing of the lasing of the semiconductor microcavity laser array near the threshold.

[0057] Figure 9 A scanning electron microscope picture of the semiconductor microcavity laser array after inductively coupled plasma (ICP) etching is shown. Figure 8 It can be seen that the square microcavity 1 as an integrated unit is a two-port square microcavity 1, the waveguide 4 is at an angle of 45° with the side of the square microcavity 1, the control end 2 and the processing end 3 are connected through the waveguide 4, and the direct integration of the control end 2 and the processing end 3 is realized. It can be seen from the scanning electron microscope picture that the steepness of the sidewall of the semiconductor microcavity laser array after ICP etching is good, there is no break in the connection between the waveguide 4 and the cavity, and the connection is good. The depth from the top of the cavity to the far end is 4.6 microns, good etching is achieved, and the yield of the device is ensured.

[0058] Figure 10a ​Fig. 3 schematically shows a power-current curve of the semiconductor microcavity laser array provided by the embodiment of the present disclosure when the TEC temperature is 293K and the threshold current is 16mA; Figure 10b Fig. 4 schematically shows a power-current curve of the semiconductor microcavity laser array provided by the embodiment of the present disclosure when the TEC temperature is 293K and the threshold current is 19mA. Figure 10a The abscissa of Fig. 3 is the current of the control end 2, and the ordinate is the total output power collected by the multimode fiber. Figure 10b The abscissa of Fig. 4 is the current of the processing end 3, and the ordinate is the total output power collected by the multimode fiber.

[0059] Referring to Figs. 3 and 4, Figure 10a and 10b the threshold currents of the control end 2 and the processing end 3 microcavity lasers are 16mA and 19mA respectively, the corresponding threshold current densities are 1.8kA / cm 2 and 2.1kA / cm 2 , the parallel resistances are 8.3 ohms and 9.8 ohms respectively, and the maximum output powers are 3.3μW and 20μW respectively. Since the light signal generated by the control end 2 is output after being processed by the processing end 3, the processing end 3 is a loss cavity without bias current, so the output power collected by the optical fiber of the control end 2 is low.

[0060] In summary, the semiconductor microcavity laser array provided by the present disclosure includes a control end 2 for generating a light signal, a processing end 3 for compensating for the loss of the light signal, a waveguide 4 for directly connecting the control end 2 and the processing end 3 to form an array and realize the transmission of the light signal, an electrical isolation groove 5 arranged between the control end 2 and the processing end 3, an output waveguide for realizing the output of the light signal, and a semiconductor microcavity laser array taking a square microcavity 1 as an integrated unit, and the control end 2 and the processing end 3 are also integrated by the square microcavity 1. The semiconductor microcavity laser array is grown on an AlGaInAs / InP epitaxial wafer, and the epitaxial wafer has, from bottom to top, an InP substrate, an N-type buffer layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a transition layer, an ohmic contact layer, and an InP protective layer. The semiconductor microcavity laser array does not need to be subjected to secondary epitaxy and complex integration, has a simple manufacturing process, low cost, high yield and high reliability, and provides a new idea and direction for on-chip integration, which has a broad application prospect. At the same time, the semiconductor microcavity laser array provided by the present disclosure can perform parallel operation and two-way processing when performing all-optical computing, has high reconfigurability and scalability, and can be further expanded by cascading basic element structures to realize super-area integration and perform more complex computing tasks.

[0061] The above describes embodiments of the present disclosure. However, these embodiments are merely for illustrative purposes, and are not intended to limit the scope of the present disclosure. Although each embodiment is described above separately, this does not mean that the measures in each embodiment cannot be used advantageously in combination. The scope of the present disclosure is defined by the appended claims and their equivalents. Those skilled in the art can make various substitutions and modifications without departing from the scope of the present disclosure, and these substitutions and modifications should all fall within the scope of the present disclosure.

Claims

1. A semiconductor microcavity laser array, characterized by, The application relates to a square microcavity (1) grown on an edge-emitting AlGaInAs / InP epitaxial wafer, wherein the epitaxial wafer comprises, from bottom to top, an InP substrate, an N-type buffer layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a transition layer, an ohmic contact layer and an InP protective layer; a control end (2) integrated with the square microcavity (1) and used for generating an optical signal; a processing end (3) integrated with the square microcavity (1) and used for compensating for loss of the optical signal; a waveguide (4) used for directly connecting the control end (2) and the processing end (3) to form an array and realize transmission of the optical signal; an electrically isolated groove (5) arranged between the control end (2) and the processing end (3); and an output waveguide used for realizing output of the optical signal; wherein two non-adjacent vertices of the square microcavity (1) are directly connected with the waveguide (4); the mode field distribution of the square microcavity (1) has symmetry and antisymmetry, two waveguides (4) with symmetry are introduced to realize output of in-phase optical signals and anti-phase optical signals; the square microcavity (1) of the control end (2) in each integrated unit generates two columns of optical signals, the optical signals of the square microcavities (1) of adjacent control ends (2) interfere in the directly connected waveguide (4), and then enter the processing end (3) through a vertex of the square microcavity (1) of the processing end (3) which is not provided with the directly connected waveguide (4) to perform the same optical signal processing as the control end (2). The square microcavities (1) are all active cavities and are covered by electrodes. The control end (2) designs the symmetric mode electrode (7) and the antisymmetric mode electrode (6) according to the field distribution of the symmetric mode and the antisymmetric mode to generate optical signals of specific modes. The square microcavities (1) can be integrated in an unlimited number of units to perform complex calculation tasks. The electrically isolated groove (5) is formed by etching the ohmic contact layer and is used for controlling the control end (2) and the processing end (3) to be respectively biased with a current to realize electric isolation between the control end (2) and the processing end (3). The output waveguide comprises a first end face and a second end face, the first end face is connected with the processing end (3), and the second end face is a cleaved face, namely an output end (9), which is used for realizing output of the optical signal. The material of the substrate is InP. The active layer is an AlGalnAs multi-quantum well structure.

2. The semiconductor microcavity laser array of claim 1, wherein, The waveguide (4) is a strip structure.

3. The semiconductor microcavity laser array of claim 2, wherein, ​ 4. The semiconductor microcavity laser array of claim 1, wherein, ​ 5. The semiconductor microcavity laser array of claim 1, wherein, ​ 6. The semiconductor microcavity laser array of claim 1, wherein, ​ 7. The semiconductor microcavity laser array of claim 1, wherein, ​ 8. The semiconductor microcavity laser array of claim 1, wherein, ​ 9. The semiconductor microcavity laser array of claim 1, wherein, ​

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