A strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip

Abstract

The present invention discloses a strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip, comprising two first n-type electrodes, a first n-GaN two-dimensional topological photonic crystal, an n-InGaN layer, an InGaN quantum well active layer, a p-InGaN layer, a p-AlGaN barrier layer, a p-GaN injection layer, an n-type electrode, a first n-GaN two-dimensional topological photonic crystal, a n-InGaN layer, an InGaN quantum well active layer, a p-InGaN layer, a p-AlGaN barrier layer, a p-GaN injection layer, and a n-type electrode. + ‑GaN layer, a second n-type electrode, and two insulating organic materials; the two insulating organic materials are arranged horizontally, and the n‑InGaN layer, the InGaN quantum well active layer, the p‑InGaN layer, the p‑AlGaN barrier layer, the p‑GaN injection layer, and the n + The n-GaN layers are stacked from bottom to top, and are both located between the two insulating organic materials and connected to the insulating organic materials; the two insulating organic materials are both arranged on top of the first n-GaN two-dimensional topological photonic crystal, and the top of the first n-GaN two-dimensional topological photonic crystal is also connected to the bottom of the n-InGaN layer; the first n-type electrode is arranged on the top of the first n-GaN two-dimensional topological photonic crystal and is located directly below the insulating organic material; the bottom of the second n-type electrode is simultaneously connected to the top of the insulating organic material, the n-InGaN layer, and the bottom of the second n-type electrode. + Top connection of the ‑GaN layer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor microcavity polariton laser chips, and more specifically to a strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip. Background Art

[0002] The spontaneous coherence generated by the strong coupling of quasiparticles (excitons) in semiconductor materials with microcavity photons has long been a frontier research topic in condensed matter physics and semiconductor photonics. Exciton-polaritons are quasiparticles formed by the mutual coupling of semiconductor excitons and microcavity photons. Exciton-polaritons possess dual properties of photons and excitons, making them a typical boson. Their light mass allows them to undergo Bose-Einstein condensation (BEC) and photonic superfluid behavior at elevated temperatures, even at room temperature, and at low densities. This facilitates the realization of ultra-low-threshold spontaneous coherent condensation phase transition laser output. The threshold of such polariton lasers is more than two orders of magnitude lower than that of conventional lasers. This gives exciton-polaritons broad application prospects, including ultra-low-threshold polariton lasers, polariton parametric amplifiers, and exciton-polariton LEDs. Given these excellent properties and promising practical applications, polariton photonic devices have become a frontier research hotspot in semiconductor optoelectronics and quantum optics. In particular, the orthogonal characteristics of the left and right vortex states of polariton coherent vortex light can well realize quantum logic gate operations, and are expected to be widely used in big data space-division multiplexing optical transmission, optical quantum chips, and national defense confidential communications.

[0003] In recent years, the concept of topology has been extended from condensed matter physics to photonics. This has led to the emergence of a new type of topologically protected photonic mode laser that can effectively suppress mode losses such as corner and defect losses. Topological valley photonic crystals are similar to two-dimensional valleytronic materials. They have topological edge states, and valley degrees of freedom are protected by lattice symmetry. They have been demonstrated in a variety of photonic crystal structures, and similar valley-protected edge states have also been realized in acoustic wave crystals. In two-dimensional materials, valley degrees of freedom are similar to spins in spintronics devices, but do not require strong spin-orbit coupling. Similarly, topological photonic lattices can provide robust light transmission in highly compact structures with a periodicity comparable to the wavelength, without the need for magnetic materials or complex photonic pseudospin structures. Therefore, they are expected to realize compact, ultra-low power, multi-degree-of-freedom controllable topological photonic crystal microcavity lasers.

[0004] The development of BEC lasers based on the concept of topological insulating states, using semiconductor strongly coupled topological microcavity polariton lasers, presents an opportunity. Therefore, it is necessary to focus on the fundamental theory and applied science of ultra-low power semiconductor topological microcavity polariton laser chips in order to achieve leapfrog development. Summary of the Invention

[0005] In order to solve the problems of the above-mentioned deficiencies and defects in the prior art, the present invention provides a strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip, which can realize a compact, ultra-low power, multi-degree-of-freedom controlled topological photonic crystal microcavity laser.

[0006] In order to achieve the above-mentioned purpose of the present invention, the technical solutions adopted are as follows:

[0007] A strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip, the laser chip comprises two first n-type electrodes, a first n-GaN two-dimensional topological photonic crystal, an n-InGaN layer, an InGaN quantum well active layer, a p-InGaN layer, a p-AlGaN barrier layer, a p-GaN injection layer, an n-type electrode, a first n-GaN two-dimensional topological photonic crystal, a n-InGaN layer, an InGaN quantum well active layer, a p-InGaN layer, a p-AlGaN barrier layer, a p-GaN injection layer, and a n-type electrode. + -GaN layer, second n-type electrode, two insulating organic materials;

[0008] The two insulating organic materials are arranged horizontally, and the n-InGaN layer, InGaN quantum well active layer, p-InGaN layer, p-AlGaN barrier layer, p-GaN injection layer, n + -GaN layers are stacked sequentially from bottom to top, each layer is located between the two insulating organic materials and is connected to the insulating organic materials;

[0009] Two insulating organic materials are both arranged on the top of the first n-GaN two-dimensional topological photonic crystal, and the top of the first n-GaN two-dimensional topological photonic crystal is also connected to the bottom of the n-InGaN layer;

[0010] The first n-type electrode is arranged on the top of the first n-GaN two-dimensional topological photonic crystal and is located directly below the insulating organic material;

[0011] The bottom of the second n-type electrode is simultaneously connected to the top of the insulating organic material, n + -Top connection of GaN layer.

[0012] Preferably, it further comprises a second n-GaN two-dimensional topological photonic crystal;

[0013] The bottom of the second n-GaN two-dimensional topological photonic crystal is connected to the n + -Top connection of GaN layer;

[0014] Two ends of the second n-GaN two-dimensional topological photonic crystal are respectively connected to the side of a second n-type electrode.

[0015] Preferably, a second sawtooth structure is provided at the bottom of the first n-GaN two-dimensional topological photonic crystal, and the second sawtooth structure is located between the two first n-type electrodes.

[0016] Preferably, the InGaN quantum well active layer serves as the active region of the semiconductor microcavity, and through the two-dimensional spatial wave function confinement effect of the quantum well, the stability of the exciton under high temperature and large current injection conditions is improved, thereby improving the working characteristics of the exciton polariton.

[0017] Furthermore, the large Purcell factor of the first n-GaN two-dimensional topological photonic crystal is used to obtain strong coupling between photons and the exciton state of the InGaN quantum well active layer, thereby realizing electrically injected polariton spontaneous BEC and coherent stimulated emission, and simultaneously realizing the control of the quantum state of polariton coherent light and laser output.

[0018] Furthermore, the p-AlGaN barrier layer is used to limit the leakage of electrons to the p-type GaN, thereby forming a high-density exciton state in the InGaN quantum well active layer and generating efficient strong coupling with microcavity photons, thereby achieving stable exciton polariton at high temperatures.

[0019] Furthermore, the p-GaN injection layer is used to form a reverse tunneling junction to improve hole injection efficiency.

[0020] Preferably, the first n-type electrode is a ring-shaped In / Au ohmic electrode.

[0021] Preferably, the second n-type electrode is a ring-shaped Au ohmic contact electrode. + -GaN layer forms n-GaN layer under reverse bias + -p Tunneling junction.

[0022] Preferably, the n + -GaN layer, forming a heavily doped n + -p reverse tunneling junction realizes effective current spreading and exciton state injection.

[0023] The beneficial effects of the present invention are as follows:

[0024] The first n-GaN two-dimensional topological photonic crystal and InGaN quantum well active layer described in the present invention greatly improve the stability of excitons under high temperature and large current injection conditions by virtue of the two-dimensional spatial wave function confinement effect of the quantum well, thereby improving the working characteristics of the exciton polariton. The p-AlGaN blocking layer provides a sufficiently high electron barrier in the conduction band to limit the leakage of electrons to the p-type GaN, thereby forming a high-density exciton state in the quantum well. The p-GaN injection layer is used to form a reverse tunneling junction to improve the hole injection efficiency, thereby solving the current expansion and ohmic contact of the heavily doped n-GaN. + -GaN layer, intrinsic GaN waveguide layer, and two-dimensional topological photonic crystals at the bottom and top to solve the problem of microcavity polariton quantum state instability.

[0025] This invention replaces the DBR in traditional microcavities with a two-dimensional topological photonic crystal for intensity feedback and quantum state control. The Purcell effect within the microcavity of the two-dimensional topological photonic crystal is fully exploited to achieve spontaneous BEC condensation and stimulated emission of high-temperature, strongly coupled polariton. Furthermore, through the design of two-dimensional topological photonic valley states, polarization locking and quantum state control are achieved, enabling polariton condensation laser output. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic structural diagram of the strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip described in the present invention.

[0027] Figure 2 This is a schematic diagram of the structure of n-GaN two-dimensional topological photonic crystal.

[0028] In the figure, 1-first n-type electrode, 2-first n-GaN two-dimensional topological photonic crystal, 3-n-InGaN layer, 4-InGaN quantum well active layer, 5-p-InGaN layer, 6-p-AlGaN barrier layer, 7-p-GaN injection layer, 8-n + -GaN layer, 9-second n-type electrode, 10-insulating organic matter, 11-second n-GaN two-dimensional topological photonic crystal. DETAILED DESCRIPTION

[0029] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

[0030] Example 1

[0031] like Figure 1As shown, a strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip, the laser chip includes two first n-type electrodes 1, a first n-GaN two-dimensional topological photonic crystal 2, an n-InGaN layer 3, an InGaN quantum well active layer 4, a p-InGaN layer 5, a p-AlGaN barrier layer 6, a p-GaN injection layer 7, an n-type electrode 1, a first n-GaN two-dimensional topological photonic crystal 2, an n-InGaN layer 3, an InGaN quantum well active layer 4, a p-InGaN layer 5, a p-AlGaN barrier layer 6, a p-GaN injection layer 7, and a n-type electrode 1. + -GaN layer 8, second n-type electrode 9, two insulating organic materials 10;

[0032] The two insulating organic materials 10 are arranged horizontally, and the n-InGaN layer 3, the InGaN quantum well active layer 4, the p-InGaN layer 5, the p-AlGaN barrier layer 6, the p-GaN injection layer 7, ... + -GaN layers 8 are stacked sequentially from bottom to top, and are located between the two insulating organic materials 10 and connected to the insulating organic materials 10;

[0033] Two insulating organic materials 10 are both arranged on the top of the first n-GaN two-dimensional topological photonic crystal 2, and the top of the first n-GaN two-dimensional topological photonic crystal 2 is also connected to the bottom of the n-InGaN layer 3;

[0034] The first n-type electrode 1 is arranged on the top of the first n-GaN two-dimensional topological photonic crystal 2 and is located directly below the insulating organic material 10;

[0035] The bottom of the second n-type electrode 9 is connected to the top of the insulating organic material 10 and the n-type electrode 9. + - Top connection of the GaN layer 8 .

[0036] In a specific embodiment, Figure 2 As shown, it also includes a second n-GaN two-dimensional topological photonic crystal 11;

[0037] The bottom of the second n-GaN two-dimensional topological photonic crystal 11 is connected to the n + - Top connection of the GaN layer 8;

[0038] Both ends of the second n-GaN two-dimensional topological photonic crystal 11 are respectively connected to the side of a second n-type electrode 9 .

[0039] In this embodiment, a first sawtooth structure is provided on the top of the second n-GaN two-dimensional topological photonic crystal 11 , and the cross section of the first sawtooth structure is a rectangular structure. The first sawtooth structure is located between the two second n-type electrodes 9 .

[0040] In a specific embodiment, a second sawtooth structure is provided at the bottom of the first n-GaN two-dimensional topological photonic crystal 2 , and the second sawtooth structure is located between the two first n-type electrodes 1 .

[0041] In this embodiment, the cross section of the second sawtooth structure is also a rectangular structure.

[0042] In this embodiment, the first n-GaN two-dimensional topological photonic crystal 2 and the InGaN quantum well active layer 4, by virtue of the two-dimensional spatial wave function confinement effect of the quantum well, greatly improve the stability of the exciton under high temperature and large current injection conditions, thereby improving the working characteristics of the exciton polariton. The p-AlGaN blocking layer enables the conduction band to have a sufficiently high electronic barrier to limit the leakage of electrons to the p-type GaN, thereby forming a high-density exciton state in the quantum well. The p-GaN injection layer 7 is used to form a reverse tunneling junction to improve the hole injection efficiency, thereby solving the current expansion and ohmic contact of the heavily doped n+-GaN layer 8, the intrinsic GaN waveguide layer, and the bottom and top two-dimensional topological photonic crystals used to solve the problem of instability of the microcavity polariton quantum state.

[0043] This embodiment fully utilizes the large Purcell factor of a small, high-Q topological microcavity to achieve strong coupling between photons and InGaN quantum well exciton states, enabling spontaneous BEC and coherent stimulated emission of electrically injected polaritons. It also enables quantum state manipulation and laser output of the polariton coherent light. A two-dimensional topological photonic crystal replaces the DBR in a conventional microcavity for intensity feedback and quantum state manipulation. The microcavity's strong Purcell effect is fully exploited to achieve spontaneous BEC condensation and stimulated emission of high-temperature, strongly coupled polaritons. Furthermore, through the design of two-dimensional topological photonic valley states, polarization locking and quantum state manipulation are achieved, enabling polariton condensation laser output.

[0044] Example 2

[0045] like Figure 1 As shown, a strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip, the laser chip includes two first n-type electrodes 1, a first n-GaN two-dimensional topological photonic crystal 2, an n-InGaN layer 3, an InGaN quantum well active layer 4, a p-InGaN layer 5, a p-AlGaN barrier layer 6, a p-GaN injection layer 7, an n-type electrode 1, a first n-GaN two-dimensional topological photonic crystal 2, an n-InGaN layer 3, an InGaN quantum well active layer 4, a p-InGaN layer 5, a p-AlGaN barrier layer 6, a p-GaN injection layer 7, and a n-type electrode 1. + -GaN layer 8, second n-type electrode 9, two insulating organic materials 10;

[0046] The two insulating organic materials 10 are arranged horizontally, and the n-InGaN layer 3, the InGaN quantum well active layer 4, the p-InGaN layer 5, the p-AlGaN barrier layer 6, the p-GaN injection layer 7, ... + -GaN layers 8 are stacked sequentially from bottom to top, and are located between the two insulating organic materials 10 and connected to the insulating organic materials 10;

[0047] Two insulating organic materials 10 are both arranged on the top of the first n-GaN two-dimensional topological photonic crystal 2, and the top of the first n-GaN two-dimensional topological photonic crystal 2 is also connected to the bottom of the n-InGaN layer 3;

[0048] The first n-type electrode 1 is arranged on the top of the first n-GaN two-dimensional topological photonic crystal 2 and is located directly below the insulating organic material 10;

[0049] The bottom of the second n-type electrode 9 is connected to the top of the insulating organic material 10 and the n-type electrode 9. + - Top connection of the GaN layer 8 .

[0050] In a specific embodiment, Figure 2 As shown, it also includes a second n-GaN two-dimensional topological photonic crystal 11;

[0051] The bottom of the second n-GaN two-dimensional topological photonic crystal 11 is connected to the n + - Top connection of the GaN layer 8;

[0052] Both ends of the second n-GaN two-dimensional topological photonic crystal 11 are respectively connected to the side of a second n-type electrode 9 .

[0053] In this embodiment, a first sawtooth structure is provided on the top of the second n-GaN two-dimensional topological photonic crystal 11 , and the cross section of the first sawtooth structure is a rectangular structure. The first sawtooth structure is located between the two second n-type electrodes 9 .

[0054] In a specific embodiment, a second sawtooth structure is provided at the bottom of the first n-GaN two-dimensional topological photonic crystal 2 , and the second sawtooth structure is located between the two first n-type electrodes 1 .

[0055] In this embodiment, the cross section of the second sawtooth structure is also a rectangular structure.

[0056] In this embodiment, the first n-GaN two-dimensional topological photonic crystal 2 and the InGaN quantum well active layer 4, by virtue of the two-dimensional spatial wave function confinement effect of the quantum well, greatly improve the stability of the exciton under high temperature and large current injection conditions, thereby improving the working characteristics of the exciton polariton. The p-AlGaN blocking layer enables the conduction band to have a sufficiently high electronic barrier to limit the leakage of electrons to the p-type GaN, thereby forming a high-density exciton state in the quantum well. The p-GaN injection layer 7 is used to form a reverse tunneling junction to improve the hole injection efficiency, thereby solving the current expansion and ohmic contact of the heavily doped n-GaN. + -GaN layer 8, intrinsic GaN waveguide layer and two-dimensional topological photonic crystals at the bottom and top to solve the problem of microcavity polariton quantum state instability.

[0057] This embodiment fully utilizes the large Purcell factor of a small, high-Q topological microcavity to achieve strong coupling between photons and InGaN quantum well exciton states, enabling spontaneous BEC and coherent stimulated emission of electrically injected polaritons. It also enables quantum state manipulation and laser output of the polariton coherent light. A two-dimensional topological photonic crystal replaces the DBR in a conventional microcavity for intensity feedback and quantum state manipulation. The microcavity's strong Purcell effect is fully exploited to achieve spontaneous BEC condensation and stimulated emission of high-temperature, strongly coupled polaritons. Furthermore, through the design of two-dimensional topological photonic valley states, polarization locking and quantum state manipulation are achieved, enabling polariton condensation laser output.

[0058] In a specific embodiment, the InGaN quantum well active layer 4 serves as the active region of the semiconductor microcavity, and through the two-dimensional spatial wave function confinement effect of the quantum well, the stability of the exciton under high temperature and large current injection conditions is improved, thereby improving the working characteristics of the exciton polariton.

[0059] In a specific embodiment, the large Purcell factor of the first n-GaN two-dimensional topological photonic crystal 2 is used to obtain strong coupling between photons and the exciton state of the InGaN quantum well active layer, thereby realizing electrically injected polariton spontaneous BEC and coherent stimulated emission, and simultaneously realizing the control of the quantum state of polariton coherent light and laser output.

[0060] In a specific embodiment, to address the problem that the mobility and concentration of electrons are much higher than those of holes, a p-AlGaN electron blocking layer with a high Al content is introduced to confine electrons. The p-AlGaN blocking layer is used to limit the leakage of electrons into the p-type GaN; thereby forming a high-density exciton state in the InGaN quantum well active layer 4 and generating efficient strong coupling with microcavity photons, thereby achieving stable exciton polariton at high temperatures.

[0061] In this embodiment, the thickness of the p-AlGaN electron blocking layer can be set to 5-15 nm.

[0062] In a specific embodiment, the p-GaN injection layer 7 is used to form a reverse tunneling junction to improve hole injection efficiency.

[0063] In a specific embodiment, the first n-type electrode 1 is a ring-shaped In / Au ohmic electrode.

[0064] In a specific embodiment, the second n-type electrode 9 is a ring-shaped Au ohmic contact electrode, which forms an n-type contact with the n+-GaN layer 8 under reverse bias. + -p Tunneling junction.

[0065] In a specific embodiment, the n + -GaN layer 8, forming a heavily doped n + -p reverse tunneling junction realizes effective current spreading and exciton state injection.

[0066] The first n-GaN two-dimensional topological photonic crystal 2 and the second n-GaN two-dimensional topological photonic crystal 11 have self-supporting vertical structures, small dimensions, and high-Q microcavities. The low background carrier concentration, high optical quality, and highly flat quantum well active regions are beneficial for enhancing exciton binding energy, increasing oscillator strength, and suppressing inhomogeneous broadening of exciton states, thereby achieving strong coupling interactions with photons.

[0067] Therefore, this embodiment uses a two-dimensional topological photonic crystal to replace the upper and lower dielectric materials DBR of a traditional microcavity, so as to obtain a large Purcell factor in a small-sized, high-Q microcavity.

[0068] This embodiment utilizes the degree of freedom of the valley formed by the sawtooth structure in the two-dimensional topological photonic crystal to suppress the loss of the mode.

[0069] This embodiment uses heavily doped n + -p reverse tunneling junction realizes effective current expansion and exciton state injection to solve the problems of current expansion and ohmic contact in the p region.

[0070] Example 3

[0071] Based on the strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip described in Example 1 or Example 2, this embodiment also provides a corresponding preparation method as follows:

[0072] According to the structural parameters of the designed laser chip, the first n-type electrode 1, the first n-GaN two-dimensional topological photonic crystal 2, the n-InGaN layer 3, the InGaN quantum well active layer 4, the p-InGaN layer 5, the p-AlGaN barrier layer 6, the p-GaN injection layer 7, the n-InGaN layer 8, the n-GaN two-dimensional topological photonic crystal 9, the n-InGaN layer 10, the p-InGaN layer 11, the p-AlGaN barrier layer 12, the p-GaN injection layer 13, the n-InGaN layer 14, the n-InGaN layer 15, the p-InGaN layer 16, the p-AlGaN barrier layer 17, the p-GaN injection layer 18, the n-InGaN layer 19, the n-InGaN layer 20, the p-InGaN layer 21, the p-InGaN + -GaN layer 8.

[0073] The low background carrier concentration, high optical quality, and highly flat InGaN quantum well active region are beneficial to enhancing the exciton binding energy, improving the oscillator strength, suppressing the inhomogeneous broadening of the exciton state, and thus achieving strong coupling interaction with photons.

[0074] To solve the problem of current expansion and ohmic contact in the p region, heavy n-doping will be used. + -p reverse tunneling junction realizes effective current spreading and exciton state injection.

[0075] The energy valley splitting caused by the spin of the exciton state in the quantum well is used to realize the coupling of the exciton-photon spin quantum state, and a micro-circularly polarized photocurrent effect (Micro-CPGE) measurement system is constructed.

[0076] Using FDTD simulations of topological microcavity optical modes, researchers address the unstable polarization of conventional microcavity polariton laser output and overcome the difficulty of cracking during the fabrication of the p-AlGaN barrier layer 6. By replacing the upper and lower dielectric materials (DBRs) of conventional microcavities with two-dimensional topological photonic crystals (2DPCs), they achieve a large Purcell factor in a small, high-Q microcavity. The topological microstructures within the 2DPCs enable excellent feedback of optical field intensity and unique control capabilities for optical quantum states. FDTD simulations demonstrate that the electric field peak of a single optical mode in the microcavity effectively overlaps in real space with the exciton states in the InGaN quantum well layer in the axial distribution. Furthermore, the photon energy (frequency) is negatively detuned from the exciton energy difference to produce efficient exciton-photon coupling.

[0077] The design of a topological microcavity based on GaN circular nanopillars as a basic unit exploits the valley degree of freedom in photonic crystals, similar to two-dimensional notched valleytronic materials. Even when perturbations are introduced into the structure, the presence of topologically protected valley edge states can significantly suppress mode losses.

[0078] Obviously, the above embodiments of the present invention are merely examples for the purpose of illustrating the present invention, and are not intended to limit the embodiments of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. A strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip, characterized by: The laser chip comprises two first n-type electrodes (1), a first n-GaN two-dimensional topological photonic crystal (2), an n-InGaN layer (3), an InGaN quantum well active layer (4), a p-InGaN layer (5), a p-AlGaN blocking layer (6), a p-GaN injection layer (7), an n- + -GaN layer (8), a second n-type electrode (9), two insulating organic materials (10); The two insulating organic materials (10) are arranged horizontally, and the n-InGaN layer (3), InGaN quantum well active layer (4), p-InGaN layer (5), p-AlGaN blocking layer (6), p-GaN injection layer (7), n + -GaN layers (8) are stacked sequentially from bottom to top, each located between the two insulating organic materials (10) and connected to the insulating organic materials (10); The two insulating organic materials (10) are both arranged on the top of the first n-GaN two-dimensional topological photonic crystal (2), and the top of the first n-GaN two-dimensional topological photonic crystal (2) is also connected to the bottom of the n-InGaN layer (3); The first n-type electrode (1) is arranged on the top of the first n-GaN two-dimensional topological photonic crystal (2) and is located directly below the insulating organic material (10); The bottom of the second n-type electrode (9) is simultaneously connected to the top of the insulating organic material (10) and the top of the n+-GaN layer (8); The laser chip further includes a second n-GaN two-dimensional topological photonic crystal (11); The bottom of the second n-GaN two-dimensional topological photonic crystal (11) is connected to the n + - Top connection of the GaN layer (8); Both ends of the second n-GaN two-dimensional topological photonic crystal (11) are respectively connected to the side of a second n-type electrode (9).

2. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 1, characterized in that: A second sawtooth structure is provided at the bottom of the first n-GaN two-dimensional topological photonic crystal (2), and the second sawtooth structure is located between the two first n-type electrodes (1).

3. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 1, characterized in that: The InGaN quantum well active layer (4) serves as the active region of the semiconductor microcavity, and through the two-dimensional spatial wave function confinement effect of the quantum well, improves the stability of the exciton under high temperature and large current injection conditions, thereby improving the working characteristics of the exciton polariton.

4. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 3, characterized in that: The large Purcell factor of the first n-GaN two-dimensional topological photonic crystal (2) is used to obtain strong coupling between photons and the exciton state of the InGaN quantum well active layer, thereby realizing electrically injected polariton spontaneous BEC and coherent stimulated emission, and simultaneously realizing the control of the quantum state of polariton coherent light and laser output.

5. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 4, characterized in that: The p-AlGaN blocking layer is used to limit the leakage of electrons to the p-type GaN, thereby forming a high-density exciton state in the InGaN quantum well active layer (4) and generating efficient strong coupling with the microcavity photons, thereby achieving stable exciton polariton at high temperature.

6. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 1, characterized in that: The p-GaN injection layer (7) is used to form a reverse tunneling junction to improve hole injection efficiency.

7. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 1, characterized in that: The first n-type electrode (1) is a ring-shaped In / Au ohmic electrode.

8. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 1, characterized in that: The second n-type electrode (9) is a ring-shaped Au ohmic contact electrode. + -GaN layer (8) forms an n-type GaN layer under reverse bias. + -p Tunneling junction.

9. The strongly coupled electric injection GaN-based semiconductor topological microcavity polariton laser chip according to claim 8, characterized in that: The n + -GaN layer (8), forming a heavily doped n + -p reverse tunneling junction realizes effective current expansion and exciton state injection.

Images