Resonant cavity light emitting diode and preparation method thereof

Abstract

The present disclosure provides a resonant cavity light-emitting diode and a method for manufacturing the same. The resonant cavity light-emitting diode may include a light-emitting structure layer, a first reflector layer, and a second reflector layer. The light-emitting structure layer includes a first surface and a second surface facing each other, and a sidewall connecting the first and second surfaces. The first reflector layer is disposed on the first surface. The second reflector layer covers at least a portion of the sidewalls and the second surface of the light-emitting structure layer, and the second reflector layer is made of an insulating material. The present disclosure can address the problem of reduced device performance caused by damage to the sidewalls of the light-emitting structure layer, while reducing the steps involved in manufacturing the insulating protective layer and saving costs.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a resonant cavity light emitting diode and a method for preparing the resonant cavity light emitting diode. Background Art

[0002] In recent years, light emitting diodes (LEDs), as a new generation of green light sources, have been widely used in lighting, backlighting, display, indication and other fields.

[0003] A resonant cavity light emitting diode (RCLED) is an LED whose radiation zone is contained within an optical cavity. The basic structure of an RCLED includes a first Bragg reflector, a second Bragg reflector, and a light-emitting structure layer. The light-emitting structure layer is located between the first and second Bragg reflectors. In actual products, these RCLEDs have low luminous efficiency and are complex to manufacture. Summary of the Invention

[0004] The purpose of the present disclosure is to provide a resonant cavity light emitting diode and a method for preparing the resonant cavity light emitting diode, which can improve the luminous efficiency of the resonant cavity light emitting diode while reducing the steps of manufacturing the insulating protective layer and saving costs.

[0005] According to one aspect of the present disclosure, there is provided a resonant cavity light emitting diode, comprising:

[0006] The light emitting structure layer comprises a first surface and a second surface opposite to each other, and a sidewall connecting the first surface and the second surface;

[0007] a first reflector layer, provided on the first surface;

[0008] The second reflector layer covers at least a portion of the sidewall of the light emitting structure layer and the second surface, and the second reflector layer is made of insulating material.

[0009] Furthermore, the resonant cavity light emitting diode further comprises:

[0010] The conductive support layer is provided on a side of the light emitting structure layer away from the second reflector layer, and the conductive support layer covers the first reflector layer.

[0011] Furthermore, the second reflector layer covers the upper surface of the conductive support layer and the light emitting structure layer.

[0012] Furthermore, the second reflector layer covers the entire area of ​​the side wall of the light-emitting structure layer, and the light-emitting structure layer includes a first conductive type semiconductor layer, a light-emitting layer and a second conductive type semiconductor layer arranged in a stacked manner; the first surface is the surface of the first conductive type semiconductor layer facing away from the light-emitting layer, and the second surface is the surface of the second conductive type semiconductor layer facing away from the light-emitting layer; the side wall of the first conductive type semiconductor layer, the side wall of the light-emitting layer and the side wall of the second conductive type semiconductor layer are flush.

[0013] Furthermore, the light emitting structure layer includes:

[0014] The first conductive type semiconductor layer includes a first region and a second region surrounding the first region, wherein the thickness of the first region is greater than that of the second region;

[0015] a light-emitting layer, disposed on the first region;

[0016] a second conductive type semiconductor layer, provided on a side of the light emitting layer away from the first conductive type semiconductor layer, the second conductive type being opposite to the first conductive type;

[0017] The first surface is the surface of the first conductive type semiconductor layer facing away from the light-emitting layer, and the second surface is the surface of the second conductive type semiconductor layer facing away from the light-emitting layer; the second reflector layer covers the second surface, the surface of the second region facing away from the first reflector layer, and the side wall of the light-emitting structure layer sandwiched between the two surfaces.

[0018] Furthermore, the resonant cavity light emitting diode further comprises:

[0019] A first electrode is provided on a side of the conductive support layer away from the light emitting structure layer;

[0020] The second electrode is disposed on the second surface of the light emitting structure layer.

[0021] Furthermore, the conductive support layer includes:

[0022] a metal bonding layer, provided on a side of the light emitting structure layer away from the second reflector layer, wherein the first reflector layer is coated between the metal bonding layer and the light emitting structure layer;

[0023] A heavily doped silicon substrate covers a side of the metal bonding layer away from the light emitting structure layer.

[0024] Furthermore, the reflectivity of the second reflector layer is 50-80%.

[0025] Furthermore, the first reflector layer is a Bragg reflector, and the resonant cavity light emitting diode further comprises:

[0026] The ITO layer is located between the first reflector layer and the light-emitting structure layer.

[0027] Furthermore, the first reflector layer is a metal reflector, and the resonant cavity light emitting diode further comprises:

[0028] The metal protection layer is disposed on a side of the light emitting structure layer away from the second reflector layer and covers the first reflector layer.

[0029] According to one aspect of the present disclosure, a method for preparing a resonant cavity light emitting diode is provided, comprising:

[0030] forming a light emitting structure layer, the light emitting structure layer comprising a first surface and a second surface opposite to each other, and a sidewall connecting the first surface and the second surface;

[0031] forming a first reflector layer on the first surface of the light emitting structure layer;

[0032] A second reflector layer is formed to cover at least a portion of the sidewall of the light emitting structure layer and the second surface, wherein the second reflector layer is made of an insulating material.

[0033] Furthermore, before forming the second reflector layer covering at least a portion of the sidewall of the light emitting structure layer and the second surface, the preparation method further includes:

[0034] A conductive support layer is formed on a side of the light emitting structure layer away from the second reflector layer, and the conductive support layer covers the first reflector layer.

[0035] Furthermore, forming a second reflector layer covering at least a portion of the sidewall of the light emitting structure layer and the second surface includes:

[0036] A second reflector layer is formed to cover the upper surface of the conductive support layer and the light emitting structure layer.

[0037] Furthermore, the light emitting structure layer includes:

[0038] The first conductive type semiconductor layer includes a first region and a second region surrounding the first region, wherein the thickness of the first region is greater than that of the second region;

[0039] a light-emitting layer, disposed on the first region;

[0040] a second conductive type semiconductor layer, provided on a side of the light emitting layer away from the first conductive type semiconductor layer, the second conductive type being opposite to the first conductive type;

[0041] The first surface is a surface of the first conductive type semiconductor layer facing away from the light emitting layer, and the second surface is a surface of the second conductive type semiconductor layer facing away from the light emitting layer;

[0042] Forming a second reflector layer covering at least a portion of the sidewall of the light emitting structure layer and the second surface includes:

[0043] A second reflector layer is formed covering a surface of the second region facing away from the first reflector layer, the second surface, and a side wall of the light emitting structure layer between the two surfaces.

[0044] The present invention discloses a resonant cavity light-emitting diode and a method for preparing a resonant cavity light-emitting diode. The light-emitting structure layer includes a first surface and a second surface relative to each other, and a side wall connecting the first surface and the second surface. The second reflector layer not only covers the second surface of the light-emitting structure layer, but also covers the side wall of the light-emitting structure layer. It can reflect light emitted from the side wall of the light-emitting structure layer to prevent light from leaking from the side wall of the light-emitting structure layer, thereby improving the reflection efficiency and thus improving the luminous efficiency of the resonant cavity light-emitting diode. On the other hand, the second reflector layer is an insulating material and can serve as a protective layer for the light-emitting diode, protecting the top and side walls of the light-emitting diode, reducing the steps of manufacturing the insulating protective layer and saving costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 Schematic diagram of a resonant cavity light emitting diode according to an embodiment of the present disclosure.

[0046] Figure 2 yes Figure 1 Schematic diagram of the light-emitting structure layer in the structure shown.

[0047] Figure 3 is another schematic diagram of a resonant cavity light emitting diode according to an embodiment of the present disclosure.

[0048] Figure 4 yes Figure 3 Schematic diagram of the light-emitting structure layer in the structure shown.

[0049] Figure 5 yes Figure 4 Schematic diagram of the first conductivity type semiconductor layer in the structure shown.

[0050] Figure 6 4 is a flow chart of a method for preparing a resonant cavity light emitting diode according to an embodiment of the present disclosure.

[0051] Figure 7 It is a schematic diagram of the method for preparing a resonant cavity light emitting diode according to an embodiment of the present disclosure after a metal protective layer is formed.

[0052] Figure 8It is a schematic diagram after forming the first metal bonding layer in the method for preparing the resonant cavity light emitting diode according to the embodiment of the present disclosure.

[0053] Figure 9 It is a schematic diagram after forming a second metal bonding layer in the method for preparing a resonant cavity light-emitting diode according to an embodiment of the present disclosure.

[0054] Figure 10 It is a schematic diagram of the bonding of the first metal bonding layer and the second metal bonding layer in the method for preparing the resonant cavity light emitting diode according to the embodiment of the present disclosure.

[0055] Figure 11 This is a schematic diagram of the method for preparing a resonant cavity light-emitting diode according to an embodiment of the present disclosure after the substrate is removed.

[0056] Figure 12 It is a schematic diagram of the method for preparing a resonant cavity light emitting diode according to an embodiment of the present disclosure after forming an isolation trench.

[0057] Figure 13 It is a schematic diagram of the method for preparing a resonant cavity light emitting diode according to an embodiment of the present disclosure after forming a second reflector layer.

[0058] Figure 14 This is another schematic diagram of the method for preparing a resonant cavity light emitting diode according to an embodiment of the present disclosure after forming an isolation trench.

[0059] Figure 15 This is another schematic diagram after forming the second reflector layer in the method for preparing the resonant cavity light emitting diode according to the embodiment of the present disclosure.

[0060] Explanation of the accompanying drawings: 1. First electrode; 2. Conductive support layer; 201. Heavily doped silicon substrate; 202. Metal bonding layer; 2021. First metal bonding layer; 2022. Second metal bonding layer; 3. Metal protective layer; 4. First reflector layer; 5. Light-emitting structure layer; 501. First conductive type semiconductor layer; 5011. First region; 5012. Second region; 502. Light-emitting layer; 503. Second conductive type semiconductor layer; 504. First surface; 505. Second surface; 506. Side wall; 6. Second reflector layer; 7. Second electrode; 8. Substrate; 9. Buffer layer; 10. Isolation trench. DETAILED DESCRIPTION

[0061] Exemplary embodiments will be described in detail herein, examples of which are illustrated in the accompanying drawings. When the following description refers to the drawings, identical numerals in different figures represent identical or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present disclosure. Rather, they are merely examples of devices consistent with certain aspects of the present disclosure, as detailed in the appended claims.

[0062] The present disclosure provides a resonant cavity light emitting diode. Figures 1 to 4 As shown, the resonant cavity light emitting diode may include a light emitting structure layer 5, a first reflector layer 4 and a second reflector layer 6, wherein:

[0063] The light-emitting structure layer 5 includes a first surface 504 and a second surface 505 facing each other, and a sidewall 506 connecting the first surface 504 and the second surface 505. The first reflector layer 4 is disposed on the first surface 504. The second reflector layer 6 covers at least a portion of the sidewall 506 and the second surface 505 of the light-emitting structure layer 5, and the second reflector layer 6 is made of an insulating material.

[0064] In the resonant cavity light-emitting diode disclosed herein, the light-emitting structure layer 5 includes a first surface 504 and a second surface 505 relative to each other, and a side wall 506 connecting the first surface 504 and the second surface 505. The second reflector layer 6 not only covers the second surface 505 of the light-emitting structure layer 5, but also covers the side wall 506 of the light-emitting structure layer 5. It can reflect the light emitted from the side wall 506 of the light-emitting structure layer 5 to prevent the light from leaking from the side wall 506 of the light-emitting structure layer 5, thereby improving the reflection efficiency and thus improving the light-emitting efficiency of the resonant cavity light-emitting diode. On the other hand, the second reflector layer 6 is an insulating material and can serve as a protective layer for the light-emitting diode to protect the top and side wall 506 of the light-emitting diode, thereby reducing the steps of manufacturing the insulating protective layer and saving costs.

[0065] The following is a detailed description of the various components of the resonant cavity light emitting diode disclosed herein:

[0066] like Figure 2 and Figure 4As shown, the light emitting structure layer 5 may include a first conductive type semiconductor layer 501, a light emitting layer 502 and a second conductive type semiconductor layer 503 arranged in a stacked manner. The light emitting layer 502 may be at least one of a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure and a quantum dot structure. The first conductive type is different from the second conductive type. The first conductive type semiconductor layer 501 may be a P-type semiconductor layer, and the second conductive type semiconductor layer 503 may be an N-type semiconductor layer, but the present disclosure does not specifically limit this. The P-type semiconductor layer may be a P-type GaN layer, and the N-type semiconductor layer may be an N-type GaN layer. The first surface 504 of the light emitting structure layer 5 is the surface of the first conductive type semiconductor layer 501 facing away from the light emitting layer 502. The second surface 505 of the light emitting structure layer 5 is the surface of the second conductive type semiconductor layer 503 facing away from the light emitting layer 502. In one embodiment of the present disclosure, Figure 2 As shown, the sidewalls of the first conductive type semiconductor layer 501, the sidewalls of the light emitting layer 502 and the sidewalls of the second conductive type semiconductor layer 503 are flush. Figure 4 and Figure 5 As shown, the first conductive type semiconductor layer 501 includes a first region 5011 and a second region 5012 surrounding the first region 5011. The thickness of the first region 5011 is greater than the thickness of the second region 5012. The light-emitting layer 502 is arranged on the first region 5011, that is, the edge of the first conductive type semiconductor layer 501 extends out of the light-emitting layer 502 and the second conductive type semiconductor layer 503.

[0067] like Figure 1 and Figure 2 As shown, the first reflector layer 4 is provided on the first surface 504 of the light emitting structure layer 5. Specifically, the first reflector layer 4 can be provided on the above-mentioned first conductive type semiconductor layer 501. The reflectivity of the first reflector layer 4 can be 99%-100%. In one embodiment of the present disclosure, the first reflector layer 4 is a Bragg reflector (DBR). The material of the Bragg reflector is a group of multi-periodic materials selected from the material group including TiO2 / SiO2, Ti3O5 / SiO2, Ta2O5 / SiO2, Ti3O5 / Al2O3, ZrO2 / SiO2 or TiO2 / Al2O3. Furthermore, an ITO layer can be provided between the first reflector layer 4 and the light emitting structure layer 5.

[0068] In another embodiment of the present disclosure, the first reflector layer 4 is a metal reflector. The material of the metal reflector can be Ag, Ni / Ag / Ni, etc. The use of a metal reflector solves the problem of difficult epitaxial growth of a Bragg reflector. In order to prevent the first reflector layer 4 from being oxidized, the present disclosure may further include a metal protective layer 3. The metal protective layer 3 can be provided on the side of the light-emitting structure layer 5 away from the second reflector layer 6 and cover the first reflector layer 4. The material of the metal protective layer 3 can be Ni, TiW, Pt, etc. In addition, the size of the first reflector layer 4 as a metal reflector can be smaller than the size of the first conductive type semiconductor layer 501.

[0069] like Figure 1 As shown, the reflectivity of the second reflector layer 6 is 50%-80%. The second reflector layer 6 can be a Bragg reflector. The second reflector layer 6 covers at least a portion of the sidewall 506 and the second surface 505 of the light emitting structure layer 5. In one embodiment of the present disclosure, Figure 1 and Figure 2 As shown, the second reflector layer 6 covers the entire area of ​​the side wall 506 and the second surface 505 of the light emitting structure layer 5. Specifically, the resonant cavity light emitting diode of the present disclosure may further include a conductive support layer 2. The conductive support layer 2 is provided on the side of the light emitting structure layer 5 away from the second reflector layer 6, and covers the first reflector layer 4. The outer edge of the conductive support layer 2 extends out of the light emitting structure layer 5. The second reflector layer 6 covers the upper surface of the conductive support layer 2 and the light emitting structure layer 5, so that the second reflector layer 6 covers the entire area of ​​the side wall 506 of the light emitting structure layer 5. In another embodiment of the present disclosure, as Figures 3 to 5 As shown, the second reflector layer 6 covers a portion of the sidewall 506 of the light-emitting structure layer 5. Taking the first conductive type semiconductor layer 501 including the first region 5011 and the second region 5012 as an example, the second reflector layer 6 covers the second surface 505, the surface of the second region 5012 facing away from the first reflector layer 4, and the sidewall 506 of the light-emitting structure layer 5 sandwiched between the two surfaces. In addition, the distance between the portion of the second reflector layer 6 covering the second surface 505 and the first reflector layer 4, that is, the cavity length of the resonant cavity, is equal to an integer multiple of the effective half-wavelength within the light-emitting diode.

[0070] like Figure 1 and Figure 3As shown, the conductive support layer 2 may include a metal bonding layer 202 and a heavily doped silicon substrate 201. The metal bonding layer 202 may be provided on a side of the light emitting structure layer 5 away from the second reflector layer 6. The metal bonding layer 202 may be in contact with the first conductive type semiconductor layer 501 of the light emitting structure layer 5. The first reflector layer 4 is coated between the metal bonding layer 202 and the light emitting structure layer 5. The material of the metal bonding layer 202 includes at least one of Gr, Ti, and Au. Furthermore, the metal protective layer 3 is also coated between the metal bonding layer 202 and the light emitting structure layer 5. The heavily doped silicon substrate 201 covers the side of the metal bonding layer 202 away from the light emitting structure layer 5.

[0071] like Figure 1 and Figure 3 As shown, the resonant cavity light emitting diode of the embodiment of the present disclosure may further include a first electrode 1 and a second electrode 7. The first electrode 1 may be provided on the side of the conductive support layer 2 away from the light emitting structure layer 5, and the second electrode 7 may be provided on the second surface 505 of the light emitting structure layer 5. Based on this, the current can flow perpendicular to the electrodes, solving the problem of local heating caused by the lateral flow of current when the first electrode 1 and the second electrode 7 are provided on the same side. The second electrode 7 may be provided through the second reflector layer 6 to contact the light emitting structure layer 5. Taking the first conductive type semiconductor layer 501 as a P-type semiconductor layer and the second conductive type semiconductor layer 503 as an N-type semiconductor layer as an example, the first electrode 1 is a P-type electrode and the second electrode 7 is an N-type electrode.

[0072] The present disclosure also provides a method for preparing a resonant cavity light emitting diode, which is used to prepare the resonant cavity light emitting diode described in any of the above embodiments. Figure 6 As shown, the method for preparing the resonant cavity light emitting diode may include steps S100 to S120, wherein:

[0073] Step S100 : forming a light emitting structure layer, wherein the light emitting structure layer includes a first surface and a second surface opposite to each other, and a sidewall connecting the first surface and the second surface.

[0074] Step S110 : forming a first reflector layer on the first surface of the light emitting structure layer.

[0075] Step S120 : forming a second reflector layer covering at least a portion of the sidewall and the second surface of the light emitting structure layer, wherein the second reflector layer is made of an insulating material.

[0076] The resonant cavity light emitting diode prepared by the method for preparing the resonant cavity light emitting diode disclosed in the present invention is the same as the resonant cavity light emitting diode in the above embodiment, and therefore has the same beneficial effects, which will not be described in detail here.

[0077] The following is a detailed description of the steps of the method for preparing a resonant cavity light emitting diode disclosed in the present invention:

[0078] In step S100 , a light emitting structure layer is formed. The light emitting structure layer includes a first surface and a second surface opposite to each other, and a sidewall connecting the first surface and the second surface.

[0079] For example, step S100 may include:

[0080] Step S1000: providing a substrate.

[0081] like Figure 7 As shown, the substrate 8 can be a silicon substrate, or a silicon carbide substrate, but is not limited thereto, and can also be a sapphire substrate. In addition, a buffer layer 9 can be formed on the substrate 8.

[0082] Step S1001: growing a light-emitting structure layer on a substrate.

[0083] like Figure 2 and Figure 7 As shown, taking the substrate 8 provided with the buffer layer 9 as an example, the light emitting structure layer 5 can be grown on the side of the buffer layer 9 away from the substrate 8. The surface of the light emitting structure layer 5 facing away from the substrate 8 is the first surface 504, and the surface of the light emitting structure layer 5 facing the substrate 8 is the second surface 505.

[0084] In step S110 , a first reflector layer is formed on a first surface of the light emitting structure layer.

[0085] like Figure 7 As shown, taking the first reflector layer 4 as a metal reflector as an example, the first reflector can be prepared by electron beam evaporation. An annealing process is required after the evaporation is completed. In order to protect the first reflector layer 4, the embodiment of the present disclosure can also form a metal protective layer 3 covering the first reflector layer 4. The metal protective layer 3 can be prepared by magnetron sputtering. The number of the first reflector layer 4 can be multiple. The number of the metal protective layers 3 can also be multiple, and the multiple metal protective layers 3 cover the multiple first reflector layers 4 in a one-to-one correspondence.

[0086] Furthermore, if Figures 8 to 10As shown, embodiments of the present disclosure can also form a conductive support layer 2 that encapsulates a metal protective layer 3. Specifically, the steps for forming the conductive support layer 2 may include: providing a heavily doped silicon substrate 201; forming a first metal bonding layer 2021 on the surface of the heavily doped silicon substrate 201; forming a second metal bonding layer 2022 that encapsulates the metal protective layer 3; and bonding the first metal bonding layer 2021 to the second metal bonding layer 2022. The heavily doped silicon substrate 201, the first metal bonding layer 2021, and the second metal bonding layer 2022 constitute the conductive support layer 2. Furthermore, after the conductive support layer 2 is formed, embodiments of the present disclosure can also remove the aforementioned substrate 8 and buffer layer 9.

[0087] In step S120 , a second reflector layer is formed to cover at least a portion of the sidewall and the second surface of the light emitting structure layer. The second reflector layer is made of an insulating material.

[0088] In one embodiment of the present disclosure, Figures 11 to 13 As shown, step 120 may include: forming a second reflector layer 6 covering the upper surface of the conductive support layer 2 and the light-emitting structure layer 5, that is, the second reflector layer 6 covers the entire area of ​​the sidewall 506 of the light-emitting structure layer 5. Further, taking the number of first reflector layers 4 as an example, step 120 may include: after removing the substrate 8 and the buffer layer 9, patterning the light-emitting structure layer 5 to form isolation trenches 10, the light-emitting structure layer 5 being divided into multiple parts by the isolation trenches 10, each part of the light-emitting structure layer 5 being provided with a first reflector layer 4, the isolation trenches 10 exposing the conductive support layer 2; and forming the second reflector layer 6 covering the upper surface of the conductive support layer 2 and each part of the light-emitting structure layer 5.

[0089] In another embodiment of the present disclosure, Figure 11 、 Figure 14 as well as Figure 15 As shown, step 120 may include: after removing the substrate 8 and the buffer layer 9, patterning the light emitting structure layer 5 to form an isolation trench 10, the light emitting structure layer 5 is divided into a plurality of parts by the isolation trench 10, each part of the light emitting structure layer 5 is provided with a first reflector layer 4, the isolation trench 10 exposes the first conductive type semiconductor layer 501, wherein the area of ​​the first conductive type semiconductor layer 501 exposed by the isolation trench 10 is the second area 5012 of the first conductive type semiconductor layer 501 (see Figure 5 ); forming a second reflector layer 6 covering the surface of the second region 5012 facing away from the first reflector layer 4, the second surface 505, and the sidewall 506 of the light-emitting structure layer 5 between the two surfaces. It can be seen that in the embodiment of the present disclosure, the second reflector layer 6 covers a portion of the sidewall 506 of the light-emitting structure layer 5.

[0090] The preparation method of the resonant cavity light-emitting diode provided in the embodiment of the present disclosure belongs to the same inventive concept as the resonant cavity light-emitting diode in the above embodiment. The description of relevant details and beneficial effects can be referred to each other and will not be repeated here.

[0091] The above description is merely a preferred embodiment of the present disclosure and does not constitute any form of limitation to the present disclosure. Although the present disclosure has been disclosed as a preferred embodiment as above, it is not intended to limit the present disclosure. Any technician familiar with this profession can make some changes or modifications to equivalent embodiments of the technical content disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure are still within the scope of the technical solution of the present disclosure.

Claims

1. A resonant cavity light emitting diode, characterized in that: include: A light-emitting structure layer (5) comprising a first surface (504) and a second surface (505) opposite to each other, and a side wall (506) connecting the first surface (504) and the second surface (505); A first reflector layer (4) is provided on the first surface (504); a second reflector layer (6) covering at least a portion of the sidewall (506) of the light-emitting structure layer (5) and the second surface (505), and the second reflector layer (6) is made of an insulating material; A conductive support layer (2) is provided on a side of the light-emitting structure layer (5) away from the second reflector layer (6); the conductive support layer (2) covers the first reflector layer (4) and is in contact with the first surface (504) of the light-emitting structure layer (5).

2. The resonant cavity light emitting diode according to claim 1, characterized in that: The second reflector layer (6) covers the upper surface of the conductive support layer (2) and the light-emitting structure layer (5).

3. The resonant cavity light emitting diode according to claim 1, characterized in that: The second reflector layer (6) covers the entire area of ​​the side wall (506) of the light-emitting structure layer (5), wherein the light-emitting structure layer (5) comprises a first conductive type semiconductor layer (501), a light-emitting layer (502), and a second conductive type semiconductor layer (503) that are stacked; the first surface (504) is the surface of the first conductive type semiconductor layer (501) that faces away from the light-emitting layer (502), and the second surface (505) is the surface of the second conductive type semiconductor layer (503) that faces away from the light-emitting layer (502); and the side wall of the first conductive type semiconductor layer (501), the side wall of the light-emitting layer (502), and the side wall of the second conductive type semiconductor layer (503) are flush.

4. The resonant cavity light emitting diode according to claim 1, characterized in that: The light-emitting structure layer (5) comprises: A first conductive type semiconductor layer (501), comprising a first region (5011) and a second region (5012) surrounding the first region (5011), wherein the thickness of the first region (5011) is greater than the thickness of the second region (5012); a light-emitting layer (502), disposed on the first region (5011); a second conductive type semiconductor layer (503), provided on a side of the light emitting layer (502) away from the first conductive type semiconductor layer (501), the second conductive type being opposite to the first conductive type; The first surface (504) is the surface of the first conductive type semiconductor layer (501) facing away from the light-emitting layer (502), and the second surface (505) is the surface of the second conductive type semiconductor layer (503) facing away from the light-emitting layer (502); the second reflector layer (6) covers the second surface (505), the surface of the second region (5012) facing away from the first reflector layer (4), and the side wall (506) of the light-emitting structure layer (5) sandwiched between the surface of the second region (5012) facing away from the first reflector layer (4) and the second surface (505).

5. The resonant cavity light emitting diode according to claim 1, characterized in that: The resonant cavity light emitting diode further comprises: A first electrode (1) is provided on a side of the conductive support layer (2) away from the light-emitting structure layer (5); The second electrode (7) is provided on the second surface (505) of the light emitting structure layer (5).

6. The resonant cavity light emitting diode according to claim 1, characterized in that: The conductive support layer (2) comprises: a metal bonding layer (202) provided on a side of the light-emitting structure layer (5) away from the second reflector layer (6), and the first reflector layer (4) being coated between the metal bonding layer (202) and the light-emitting structure layer (5); A heavily doped silicon substrate (201) covers a side of the metal bonding layer (202) away from the light-emitting structure layer (5).

7. The resonant cavity light emitting diode according to claim 1, characterized in that: The reflectivity of the second reflector layer (6) is 50%-80%.

8. The resonant cavity light emitting diode according to claim 1, characterized in that: The first reflector layer (4) is a Bragg reflector, and the resonant cavity light emitting diode further comprises: The ITO layer is located between the first reflector layer (4) and the light-emitting structure layer (5).

9. The resonant cavity light emitting diode according to claim 1, characterized in that: The first reflector layer (4) is a metal reflector, and the resonant cavity light emitting diode further comprises: A metal protective layer (3) is provided on a side of the light-emitting structure layer (5) away from the second reflector layer (6) and covers the first reflector layer (6).

10. A method for preparing a resonant cavity light emitting diode, characterized in that: include: forming a light-emitting structure layer (5), the light-emitting structure layer (5) comprising a first surface (504) and a second surface (505) opposite to each other, and a side wall (506) connecting the first surface (504) and the second surface (505); forming a first reflector layer (4) on the first surface (504) of the light-emitting structure layer (5); forming a second reflector layer (6) covering at least a portion of the side wall (506) of the light-emitting structure layer (5) and the second surface (505), wherein the second reflector layer (6) is an insulating material; Before forming the second reflector layer (6) covering at least a portion of the sidewall (506) of the light-emitting structure layer (5) and the second surface (505), the preparation method further comprises: A conductive support layer (2) is formed on a side of the light-emitting structure layer (5) away from the second reflector layer (6), wherein the conductive support layer (2) covers the first reflector layer (4) and contacts the first surface (504) of the light-emitting structure layer (5).

11. The method for preparing a resonant cavity light emitting diode according to claim 10, characterized in that: The second reflector layer (6) formed to cover at least a portion of the sidewall (506) of the light-emitting structure layer (5) and the second surface (505) comprises: A second reflector layer (6) is formed to cover the upper surface of the conductive support layer (2) and the light-emitting structure layer (5).

12. The method for preparing a resonant cavity light emitting diode according to claim 10, characterized in that: The light-emitting structure layer (5) comprises: A first conductive type semiconductor layer (501), comprising a first region (5011) and a second region (5012) surrounding the first region (5011), wherein the thickness of the first region (5011) is greater than the thickness of the second region (5012); a light-emitting layer (502), disposed on the first region (5011); a second conductive type semiconductor layer (503), provided on a side of the light emitting layer (502) away from the first conductive type semiconductor layer (501), the second conductive type being opposite to the first conductive type; The first surface (504) is a surface of the first conductive type semiconductor layer (501) facing away from the light emitting layer (502), and the second surface (505) is a surface of the second conductive type semiconductor layer (503) facing away from the light emitting layer (502); The second reflector layer (6) formed to cover at least a portion of the sidewall (506) of the light-emitting structure layer (5) and the second surface (505) comprises: A second reflector layer (6) is formed, covering the surface of the second region (5012) facing away from the first reflector layer (4), the second surface (505), and the side wall (506) of the light-emitting structure layer (5) between the surface of the second region (5012) facing away from the first reflector layer (4) and the second surface (505).

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