A method for depositing a metal thin film based on photoresist and related equipment

Abstract

The present invention provides a method for depositing a metal thin film based on photoresist and related equipment. The method includes: controlling a magnetron sputtering device to output a target sputtering power so that plasma bombards a metal target to deposit a metal thin film on a substrate photoresist; during the process of depositing the metal thin film on the substrate photoresist, cooling the substrate photoresist to control the substrate photoresist to be maintained within a target temperature range. By controlling the target sputtering power, the sputtering temperature of metal atoms can be controlled, the heating rate of the photoresist can be controlled, and the photoresist can be cooled to control the photoresist to be maintained within the target temperature range, which can avoid the softening of the photoresist, resulting in bubble defects generated by metal atoms during the deposition process, and further improve the quality of the product and the practicability of the preparation method.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a method for depositing a metal thin film based on photoresist and related equipment. Background Art

[0002] In the process of preparing a metal thin film by physical vapor deposition, since the plasma bombards the surface of the metal target, the metal atoms on the surface of the target escape and fall onto the surface of the wafer to form a corresponding metal thin film. When the surface of the wafer is the surface of the photoresist, the energy generated during the falling of the metal atoms will be converted into heat energy at the moment of contact with the photoresist, causing the surface of the photoresist to heat up. Prolonged heating will further cause the photoresist to be modified and softened, resulting in the phenomenon of bubble defects. Therefore, the current preparation method has poor adhesion between the photoresist and the metal thin film, poor uniformity of the generated thin film, poor product quality, low success rate, which will further lead to poor practicability of the preparation method and waste of resources. Summary of the Invention

[0003] The present invention provides a method for depositing a metal thin film based on photoresist and related equipment, so as to solve the problems of poor adhesion between the photoresist and the metal thin film, poor uniformity of the generated thin film, low success rate, which will further lead to poor practicability of the preparation method and waste of resources in the current method for depositing a metal thin film based on photoresist.

[0004] In a first aspect, the present invention provides a method for depositing a metal thin film based on photoresist, characterized by comprising:

[0005] Controlling a magnetron sputtering device to output a target sputtering power so that the plasma bombards the metal target to deposit a metal thin film on the substrate photoresist;

[0006] During the process of depositing the metal thin film on the substrate photoresist, cooling and reducing the temperature of the substrate photoresist to control the substrate photoresist to be maintained within a target temperature range.

[0007] Optionally, the steps for obtaining the target temperature range include:

[0008] Obtaining the sputtering temperature of the target metal target atoms (or the corresponding metal thin film deposition temperature);

[0009] Obtaining the softening temperature range of the substrate photoresist;

[0010] Determining the target temperature range of the substrate photoresist according to the softening temperature range of the substrate photoresist.

[0011] Optionally, the method for depositing a metal thin film based on photoresist further includes:

[0012] During the process of depositing the metal thin film on the substrate photoresist, when the heating rate of the deposition surface of the substrate photoresist is greater than or equal to the cooling rate, control to stop the output of the target sputtering power;

[0013] After the output of the target sputtering power stops for a set time, control the magnetron sputtering equipment to resume the output of the target sputtering power.

[0014] Optionally, before the step of controlling the magnetron sputtering equipment to resume the output of the target sputtering power, it further includes:

[0015] Detect the output water temperature of the cooling water circulation;

[0016] Judge whether the temperature of the deposition surface is within the target temperature range according to the output water temperature of the cooling water circulation.

[0017] Optionally, the step of determining the target sputtering power of the reaction chamber includes:

[0018] Obtain the target deposition rate of the metal thin film;

[0019] Based on the target deposition rate, determine the target sputtering power of the reaction chamber.

[0020] Optionally, the determining the target sputtering power of the reaction chamber based on the target deposition rate includes:

[0021] Obtain the reaction chamber pressure of the reaction chamber;

[0022] According to the target deposition rate and the reaction chamber pressure information, determine the target sputtering power.

[0023] Optionally, the method for depositing a metal thin film based on photoresist further includes:

[0024] Obtain the target deposition thickness of the target metal thin film;

[0025] Based on the target deposition rate and the target deposition thickness, determine the target deposition times of the substrate photoresist.

[0026] Optionally, the step of obtaining the target temperature range includes:

[0027] Obtain the thermal conductivity of the substrate photoresist;

[0028] According to the thermal conductivity and the softening temperature range, determine the target temperature range of the substrate photoresist.

[0029] In a second aspect, the present invention further provides a controller, including a memory and a processor. When the processor executes a computer program stored in the memory, the steps of the metal thin film deposition method based on photoresist according to any one of the above first aspects are implemented.

[0030] In a third aspect, the present invention further provides a thin film deposition device for the metal thin film deposition method based on photoresist according to any one of the above first aspects, including:

[0031] A cooling device, wherein the cooling device includes a circulating water cooling device.

[0032] As can be seen from the above technical solutions, the present invention provides a metal thin film deposition method based on photoresist and related equipment. The method includes: controlling a magnetron sputtering device to output a target sputtering power so that plasma bombards a metal target to deposit a metal thin film on a substrate photoresist; during the process of depositing the metal thin film on the substrate photoresist, cooling and lowering the temperature of the substrate photoresist to control the substrate photoresist to be maintained within a target temperature range. Since in the current process of preparing a metal thin film by physical vapor deposition, the energy generated during the falling process of metal atoms is converted into heat energy instantaneously when contacting the photoresist, causing the surface of the photoresist to be heated and the temperature to rise. Prolonged heating will further cause the photoresist to be modified and softened, resulting in the phenomenon of bubble defects. There are problems such as poor adhesion between the photoresist and the metal thin film, poor uniformity of the generated thin film, poor product quality, low success rate, which will further lead to poor practicability of the preparation method and cause waste of resources. However, in the embodiments of the present application, by controlling the target sputtering power, the sputtering temperature of metal atoms can be controlled, the heating rate of the photoresist can be controlled, and the photoresist can be cooled and the temperature lowered to control the photoresist to be maintained within a target temperature range, which can avoid the softening of the photoresist and the generation of bubble defects during the deposition process of metal atoms, thereby improving the quality of the product and the practicability of the preparation method. Description of the Drawings

[0033] In order to more clearly illustrate the technical solutions of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0034] Figure 1 It is a schematic flow chart of a metal thin film deposition method based on photoresist provided by an embodiment of the present application;

[0035] Figure 2 It is a schematic structural diagram of a reaction chamber of a metal thin film deposition method based on photoresist provided by an embodiment of the present application;

[0036] Figure 3Schematic structural diagram of a controller provided by an embodiment of the present application;

[0037] Figure 4 Schematic structural diagram of a thin film deposition apparatus provided by an embodiment of the present application. Detailed implementation manners

[0038] Embodiments will be described in detail below, and examples thereof are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following embodiments do not represent all embodiments consistent with the present application. They are merely examples of systems and methods consistent with some aspects of the present application detailed in the claims. In several embodiments provided by the embodiments of the present application, it should be understood that the disclosed apparatus and method can also be implemented in other ways. The apparatus embodiments described below are merely exemplary.

[0039] As Figure 1 shown, an embodiment of the present application provides a metal thin film deposition method based on photoresist, including:

[0040] Step S110, controlling a magnetron sputtering device to output a target sputtering power, so that a plasma bombards a metal target, and a metal thin film is deposited on a substrate photoresist.

[0041] Exemplarily, the above target sputtering power can be controlled by controlling the power of the power supply of the magnetron sputtering device.

[0042] Step S120, during the process of depositing the metal thin film on the substrate photoresist, cooling down the substrate photoresist to control the substrate photoresist to be maintained within a target temperature range.

[0043] Exemplarily, the side of the substrate photoresist away from the metal thin film deposition can be cooled by a cooling device. The deposition of the metal thin film can be carried out periodically. For example, the wafer can be controlled by electrostatic adsorption first, and the reaction gas can be introduced into the reaction environment where the magnetron sputtering equipment is located in advance. When a certain amount of reaction gas is introduced, the power supply of the magnetron sputtering equipment can be started with a power less than the above target sputtering power. After the power supply is started, the output power of the power supply can be adjusted to the target sputtering power to control the deposition rate of the metal thin film. After depositing for a period of time, the power supply can be turned off, and the substrate photoresist can continue to be cooled. The cooling device can be started when the temperature of the metal thin film deposition surface of the substrate photoresist is higher than or equal to the preset temperature, and stopped when the temperature of the metal thin film deposition surface drops below the preset temperature. It is also possible to control the cooling device to keep running during the entire deposition cycle. For example, when depositing a copper atom thin film on the surface of AZ40 substrate photoresist, argon can be used as the reaction gas, the cooling temperature of the cooling device can be controlled at 13 °C, during the deposition stage, the target sputtering power can be 20,000 W, the deposition time can be 2 seconds, and after the deposition is completed, the substrate photoresist can continue to be cooled by the cooling device, and the cooling time can be 4 seconds.

[0044] As Figure 2 shown, Figure 2 FIG. is a schematic structural diagram of a reaction chamber for a method for depositing a metal thin film based on photoresist provided by an embodiment of the present application. Among them, 210 is a power supply device, 220 is a vacuum reaction chamber, 221 is a cathode, 222 is a target metal target, 223 is a plasma, 224 is a target metal target atom, 225 is a substrate photoresist wafer, 226 is an anode, 227 is a cooling device, and 228 is an inflation pump. When the output power of the power supply device is the target sputtering power, the plasma bombards the target metal target, and the target metal target atoms escape and deposit on the surface of the substrate photoresist wafer.

[0045] By controlling the target sputtering power, the sputtering temperature of metal atoms can be controlled, the heating rate of the photoresist can be controlled, and the photoresist can be cooled to control the photoresist to remain within the target temperature range, which can avoid the softening of the photoresist, resulting in bubble defects in the deposition process of metal atoms, and further improve the quality of the product and the practicality of the preparation method.

[0046] According to some embodiments, the steps for obtaining the above target temperature range include:

[0047] Obtain the sputtering temperature of the target metal target atoms (or the corresponding metal thin film deposition temperature);

[0048] Obtain the softening temperature range of the substrate photoresist;

[0049] Determine the target temperature range of the substrate photoresist according to the softening temperature range of the above-mentioned substrate photoresist.

[0050] Exemplarily, the sputtering temperature of the above-mentioned target metal target atoms is the temperature change on the surface of the photoresist caused by the deposition of the target metal target atoms on the surface of the substrate photoresist after escaping under the target sputtering power. The above sputtering temperature is related to the energy generated during the process of the target metal target atoms escaping and depositing on the surface of the substrate photoresist. For example, it can be related to the distance between the anode and the cathode, the magnitude of the target sputtering power, and also the heat generation capacity of the substrate photoresist due to friction. The softening temperature range of the above-mentioned substrate photoresist can be determined according to the temperature corresponding to the substrate photoresist softening to complete softening. The above target temperature range is the temperature range corresponding to no bubble defects occurring when the target metal target atoms are deposited on the surface of the substrate photoresist, and can be determined according to the type and properties of the substrate photoresist, or can be determined according to the cooling efficiency of the cooling and temperature reduction device on the metal film deposition surface of the substrate photoresist.

[0051] Since the relationship between the softening of different substrate photoresists and the surface temperature is different, therefore, determining the target temperature range of the target photoresist through the softening temperature range of the substrate photoresist can improve the effectiveness of the target temperature range, improve the uniformity and film quality of the metal film, and improve the practicability and deposition efficiency of the deposition method.

[0052] According to some embodiments, the above-mentioned method for depositing a metal film based on a photoresist further includes:

[0053] During the process of depositing the above metal film on the above substrate photoresist, when the heating rate on the deposition surface of the above substrate photoresist is greater than or equal to the cooling rate, control to stop the output of the above target sputtering power;

[0054] After the output of the above target sputtering power stops for a set time, control the magnetron sputtering device to resume the output of the target sputtering power.

[0055] Exemplarily, the heating rate on the deposition surface of the above substrate photoresist is determined according to the above sputtering temperature, which is the temperature change situation of the deposition surface of the substrate photoresist per unit time. The above cooling rate is the temperature change situation of the deposition surface of the substrate photoresist per unit time when the cooling and temperature reduction device cools the substrate photoresist away from the deposition surface. The above set time is the duration required for the temperature of the deposition surface of the substrate photoresist to drop to the target deposition temperature when the output of the target sputtering power stops, and the above target deposition temperature can be a temperature lower than the lower limit of the target temperature range.

[0056] When the above-mentioned heating rate is greater than or equal to the above-mentioned cooling rate, it can be considered that the cooling effect of the cooling device on the substrate photoresist is in a critical state. At this time, if the target sputtering power continues to be output, the deposition temperature of the target target metal atoms will cause the temperature of the deposition surface of the substrate photoresist to exceed the target temperature range, resulting in bubble defects. Therefore, when in the critical state, stop outputting the target sputtering power and set a cooling time for the substrate photoresist, which can ensure the deposition quality in the next stage, improve the uniformity of the metal thin film, and improve the practicality of the deposition method.

[0057] According to some embodiments, before the step of controlling the magnetron sputtering equipment to resume outputting the target sputtering power, it further includes:

[0058] Detect the output water temperature of the cooling water circulation;

[0059] Judge whether the temperature of the deposition surface is within the above-mentioned target temperature range according to the output water temperature of the above-mentioned cooling water circulation.

[0060] When cooling and lowering the temperature of the substrate photoresist through the water circulation system, detecting the output water temperature can determine the temperature of the deposition surface, and the temperature detection of the deposition surface can be directly carried out outside the reaction chamber, which can simplify the detection process, reduce the detection difficulty, and improve the practicality and convenience of the deposition method.

[0061] According to some embodiments, the step of determining the target sputtering power of the above-mentioned reaction chamber includes:

[0062] Obtain the target deposition rate of the above-mentioned metal thin film;

[0063] Based on the above-mentioned target deposition rate, determine the target sputtering power of the reaction chamber.

[0064] Exemplarily, the above-mentioned target deposition rate is the deposition thickness of the metal thin film per unit time. The target sputtering power has a positive correlation with the target deposition rate.

[0065] Determining the target sputtering power through the target deposition rate can reduce the difficulty of determining the target sputtering power, simplify the operation steps, reduce the deposition difficulty, and improve the practicality and convenience of the deposition method.

[0066] According to some embodiments, the above-mentioned determining the target sputtering power of the reaction chamber based on the above-mentioned target deposition rate includes:

[0067] Obtain the reaction chamber pressure of the above-mentioned reaction chamber;

[0068] According to the above-mentioned target deposition rate and the reaction chamber pressure information, determine the above-mentioned target sputtering power.

[0069] Exemplarily, the above-mentioned reaction chamber pressure can be determined by the inflation amount of the inflation pump of the reaction chamber and the volume of the reaction chamber. Under the same sputtering power, the collision probability of target metal target atoms after escaping will increase, and the deposition rate of target metal target atoms will decrease.

[0070] By using the target deposition rate and reaction chamber pressure information to determine the target sputtering power, the target sputtering power can be determined more accurately, improving the accuracy and objectivity of the deposition method and the deposition quality of the thin film.

[0071] According to some embodiments, the above-mentioned method for depositing a metal thin film based on photoresist further includes:

[0072] Obtaining the target deposition thickness of the target metal thin film;

[0073] Based on the above-mentioned target deposition rate and the above-mentioned target deposition thickness, determining the target deposition times of the substrate photoresist.

[0074] Exemplarily, the above-mentioned target deposition thickness is the overall thickness of the metal thin film determined according to the preparation requirements.

[0075] Determining the target deposition times of the substrate photoresist according to the target deposition rate and the target deposition thickness can facilitate the adjustment of the cycle of each stage of the deposition method, improve the deposition efficiency, and enhance the practicability of the deposition method.

[0076] According to some embodiments, the step of obtaining the above-mentioned target temperature range includes:

[0077] Obtaining the thermal conductivity of the above-mentioned substrate photoresist;

[0078] Based on the above-mentioned thermal conductivity and the above-mentioned softening temperature range, determining the target temperature range of the above-mentioned substrate photoresist.

[0079] Exemplarily, the above-mentioned thermal conductivity is the temperature change of the deposition surface caused by the temperature change on the side of the substrate photoresist away from the deposition surface, which is related to the type and properties of the substrate photoresist. In the case of strong thermal conductivity, it can be considered that the cooling and temperature reduction device has a good cooling effect on the deposition surface, and the upper and lower limits of the target temperature range can be increased. Conversely, the upper and lower limits of the target temperature range can be decreased.

[0080] Determining the target temperature range of the substrate photoresist according to the thermal conductivity and the softening temperature range can enhance the cooling capacity of the cooling device, expand the target temperature range, extend the time of single deposition, shorten the deposition cycle, improve the deposition efficiency, and thereby enhance the practicability of the deposition method.

[0081] As Figure 2 shown, Figure 3A schematic structural diagram of a controller provided by an embodiment of the present application.

[0082] An embodiment of the present application provides a controller 300, which includes a memory 310, a processor 320, and a computer program 311 stored on the memory 310 and executable on the processor 320. When the processor 320 executes the computer program 311, the following steps are implemented:

[0083] Control the magnetron sputtering equipment to output the target sputtering power, so that the plasma bombards the metal target, and deposit a metal thin film on the substrate photoresist;

[0084] During the process of depositing the above-mentioned metal thin film on the above-mentioned substrate photoresist, cool down the substrate photoresist to control the above-mentioned substrate photoresist to be maintained within the target temperature range.

[0085] In a specific implementation process, when the processor 320 executes the computer program 311, it can implement Figure 1 Any implementation manner in the corresponding embodiment.

[0086] Since the electronic device introduced in this embodiment is the device used to implement a device in an embodiment of the present application, based on the method introduced in the embodiment of the present application, those skilled in the art can understand the specific implementation manner and various variations of the electronic device in this embodiment. Therefore, the specific implementation of how this electronic device implements the method in the embodiment of the present application will not be described in detail here. As long as the device used by those skilled in the art to implement the method in the embodiment of the present application belongs to the scope protected by the present application.

[0087] As Figure 4 shown, Figure 4 A schematic structural diagram of a thin film deposition device provided by an embodiment of the present application, the device includes:

[0088] A cooling device 410, wherein the above-mentioned cooling device includes a circulating water cooling device 411.

[0089] By using the circulating water cooling device to cool down the substrate photoresist, it is convenient to monitor the cooling situation, reduce the cooling cost, improve the practicability of the thin film deposition device, and reduce the production cost and usage cost.

[0090] Those skilled in the art should understand that the embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk memories, CD-ROMs, optical memories, etc.) containing computer-usable program codes.

[0091] This application is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram, and the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded computer, or other programmable data processing devices to generate a machine, such that the instructions executed by the processor of the computer or other programmable data processing devices generate means for implementing the functions specified in one Figure 1 flow or multiple flows and / or blocks Figure 1 block or multiple blocks.

[0092] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, such that the instructions stored in the computer-readable memory generate a manufactured article including instruction means that implement the functions specified in one Figure 1 flow or multiple flows and / or blocks Figure 1 block or multiple blocks.

[0093] These computer program instructions can also be loaded onto a computer or other programmable data processing device, such that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process, and thus the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one Figure 1 flow or multiple flows and / or blocks Figure 1 block or multiple blocks.

[0094] Embodiments of the present application also provide a computer program product, which includes computer software instructions. When the computer software instructions run on a processing device, the processing device is caused to execute as Figure 1 the processes in the photoresist-based metal thin film deposition method in the corresponding embodiment.

[0095] The above computer program product includes one or more computer instructions. When the above computer program instructions are loaded and executed on a computer, the processes or functions described above according to the embodiments of the present application are generated in whole or in part. The above computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The above computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the above computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or wirelessly (such as infrared, wireless, microwave, etc.). The above computer-readable storage medium may be any available medium that a computer can store, or a data storage device such as a server or data center that includes one or more integrated available media. The above available medium may be a magnetic medium (such as a floppy disk, hard disk, magnetic tape), an optical medium (such as a DVD), or a semiconductor medium (such as a solid state disk (SSD)), etc.

[0096] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the above-described systems, devices, and units can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0097] In several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the above division of units is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other may be indirect couplings or communication connections through some interfaces, devices, or units, and may be in electrical, mechanical, or other forms.

[0098] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or may be distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0099] In addition, in each embodiment of the present application, each functional unit can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of a software functional unit.

[0100] If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the above methods in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as USB flash drives, mobile hard disks, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical discs.

[0101] In summary, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of each embodiment of the present application.

Claims

1. A method for depositing a metal thin film based on photoresist, characterized in that Including: Controlling the output of the target sputtering power of the magnetron sputtering equipment to enable the plasma to bombard the metal target and deposit a metal thin film on the substrate photoresist; During the process of depositing the metal thin film on the substrate photoresist, cooling down the substrate photoresist to control the substrate photoresist to be maintained within a target temperature range, where the target temperature range is the temperature range corresponding to the deposition of target metal target atoms on the surface of the substrate photoresist without bubble defects; The cooling down of the substrate photoresist includes: cooling down the side of the substrate photoresist away from the metal thin film deposition through a cooling device to periodically deposit the metal thin film, where the cooling device remains in an operating state throughout the deposition cycle; The steps for obtaining the target temperature range include: Obtaining the sputtering temperature of the target metal target atoms or the corresponding metal thin film deposition temperature; Obtaining the softening temperature range of the substrate photoresist; Based on the softening temperature range of the substrate photoresist, determining the target temperature range of the substrate photoresist, where the softening temperature range of the substrate photoresist is determined according to the temperature corresponding to the substrate photoresist from softening to complete softening.

2. The method for depositing a metal thin film based on photoresist according to claim 1, wherein, It further includes: During the process of depositing the metal thin film on the substrate photoresist, when the heating rate on the deposition surface of the substrate photoresist is greater than or equal to the cooling rate, controlling to stop the output of the target sputtering power; After the output of the target sputtering power stops for a set time, controlling the magnetron sputtering equipment to resume the output of the target sputtering power.

3. A method for depositing a metal thin film based on photoresist according to claim 2, characterized in that Before the step of controlling the magnetron sputtering equipment to resume the output of the target sputtering power, it further includes: Detecting the output water temperature of the cooling water circulation; Judging whether the temperature of the deposition surface is within the target temperature range according to the output water temperature of the cooling water circulation.

4. A method for depositing a metal thin film based on photoresist according to claim 1, wherein The steps for determining the target sputtering power of the reaction chamber include: Obtaining the target deposition rate of the metal thin film; Based on the target deposition rate, determining the target sputtering power of the reaction chamber.

5. The method for depositing a metal thin film based on a photoresist according to claim 4, wherein The determining the target sputtering power of the reaction chamber based on the target deposition rate includes: Obtaining the reaction chamber pressure of the reaction chamber; According to the target deposition rate and the reaction chamber pressure information, determining the target sputtering power.

6. The method for depositing a metal thin film based on photoresist according to claim 4, wherein It further includes: Obtaining the target deposition thickness of the target metal thin film; Based on the target deposition rate and the target deposition thickness, determining the target deposition times of the substrate photoresist.

7. A method for depositing a metal thin film based on photoresist according to claim 1, characterized in that, The steps for obtaining the target temperature range include: Obtaining the thermal conductivity of the substrate photoresist; Based on the thermal conductivity and the softening temperature range, determining the target temperature range of the substrate photoresist.

8. A controller, comprising a memory and a processor, characterized in that, The processor is used to implement the steps of the method for depositing a metal thin film based on photoresist as described in any one of claims 1 to 7 when executing the computer program stored in the memory.

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