Display substrate and display device

Abstract

The embodiment of the present application provides a display substrate and a display device, wherein the display substrate comprises: a normal display area and a light-transmitting display area; the light-transmitting display area comprises a substrate, a pixel circuit layer, an electroluminescent layer, a thin film packaging layer, a black matrix layer, an insulating layer, a color filter layer and a lens layer, the lens layer comprises a plurality of first optical lens structures, and the lens layer is located on the side of the color filter layer away from the substrate. In the present application, the lens layer comprising the first optical lens structure is added above the color filter layer of the light-transmitting display area, the light is converged by using the first optical lens structure, there is a first interval between the embedded structures of the black matrix of two groups of adjacent color filters, the position of the first optical lens structure in the vertical direction corresponds to the position of the first interval in the vertical direction, so that more external light can transmit through the UDC area, and the transmittance of the UDC area is improved.

Description

Technical Field

[0001] This application relates to the field of electronic technology, and in particular to a display substrate and a display device. Background Technology

[0002] Mobile phones and other electronic devices are increasingly demanding higher screen ratios, but due to the requirements of mobile phone photography functions, there are front-facing cameras and some sensors, which prevents mobile phones from achieving a 100% screen ratio.

[0003] To further increase the screen-to-body ratio, related technologies divide the screen into a normal display area and an under-display camera (UDC, also known as a translucent display area). The normal display area is the regular screen area, while the translucent display area is a semi-transparent area. Therefore, the camera can be placed below the translucent display area, allowing the area to display images while also projecting light onto the camera below. However, the high reflectivity of the anode area required for light emission in the translucent display area significantly limits the transmittance of external light. Improving the transmittance of the UDC area has become a pressing issue. Summary of the Invention

[0004] The purpose of this application is to provide a display substrate and a display device to improve the transmittance of the UDC area. The specific technical solution is as follows:

[0005] In a first aspect, embodiments of this application provide a display substrate, including: a normal display area and a light-transmitting display area;

[0006] The light-transmitting display area includes a substrate, a pixel circuit layer, an electroluminescent layer, a thin film encapsulation layer, a black matrix layer, an insulating layer, a color filter layer, and a lens layer;

[0007] The lens layer includes a plurality of first optical lens structures. The lens layer is located on the side of the color filter layer away from the substrate. The flexible layer is located on the side of the bottom thin film layer away from the substrate. The pixel circuit layer is located on the side of the flexible layer away from the substrate. The electroluminescent layer is located on the side of the pixel circuit layer away from the substrate. The thin film encapsulation layer is located on the side of the electroluminescent layer away from the substrate. The black matrix layer and the color filter layer are both located on the side of the thin film encapsulation layer away from the substrate. The insulating layer is located on the side of the color filter layer away from the substrate.

[0008] The color filter layer includes multiple sets of filters, and the black matrix layer includes multiple black matrix embedding structures. The black matrix embedding structures are embedded in the filters in the horizontal direction and surround the filters. There is a first interval between the black matrix embedding structures of two adjacent sets of filters. The position of the first optical lens structure in the vertical direction corresponds to the position of the first interval in the vertical direction. Each set of filters corresponds to a sub-pixel.

[0009] In one possible implementation, the electroluminescent layer includes: an anode layer, a black pixel definition layer, an emissive layer, a common emissive layer, and a cathode layer;

[0010] The anode layer is located on the side of the pixel circuit layer away from the substrate, the black pixel definition layer is located on the side of the pixel circuit layer away from the substrate, the light-emitting layer is located on the side of the anode layer away from the substrate, the common light-emitting layer is located on the side of the light-emitting layer away from the substrate, and the cathode layer is located on the side of the common light-emitting layer away from the substrate.

[0011] In one possible implementation, the electroluminescent layer includes: an anode layer, a black pixel definition layer, an emissive layer, a common emissive layer, and a cathode layer;

[0012] The anode layer is located on the side of the pixel circuit layer away from the substrate, the black pixel definition layer is located on the side of the pixel circuit layer away from the substrate, the light-emitting layer is located on the side of the anode layer away from the substrate, the common light-emitting layer is located on the side of the light-emitting layer away from the substrate, and the cathode layer is located on the side of the common light-emitting layer away from the substrate.

[0013] In one possible implementation, the light-emitting layer includes three types of light-emitting layers: a green light-emitting layer, a blue light-emitting layer, and a red light-emitting layer.

[0014] The filters include three types: a green filter, a blue filter, and a red filter. The position of the green light-emitting layer in the vertical direction corresponds to the position of the green filter in the vertical direction, the position of the blue light-emitting layer in the vertical direction corresponds to the position of the blue filter in the vertical direction, and the position of the red light-emitting layer in the vertical direction corresponds to the position of the red filter in the vertical direction.

[0015] In one possible implementation, the first optical lens structure is a semi-cylindrical or micro-hemispherical transparent crystalline structure.

[0016] In one possible implementation, a second optical lens structure is provided between the flexible layer and the pixel circuit layer, and the position of the second optical lens structure in the vertical direction corresponds to the position of the first interval in the vertical direction.

[0017] In one possible implementation, the second optical lens structure is a semi-cylindrical or micro-hemispherical transparent crystalline structure.

[0018] In one possible implementation, the anode layer includes a plurality of anode structures, each anode structure including a high transmittance region and a high reflectance region; the high transmittance region is made of a conductive material with a transmittance greater than a preset transmittance threshold, and the high reflectance region is made of a conductive material with a reflectance greater than a preset reflectance threshold.

[0019] In one possible implementation, the high transmittance region is located at the center of the anode structure; the high reflectance region is arranged horizontally around the high transmittance region.

[0020] In one possible implementation, the position of the high transmittance region in the vertical direction corresponds to the position of the light-emitting layer in the vertical direction.

[0021] In one possible implementation, the position of the first optical lens structure in the vertical direction corresponds to the position of the high-transmittance region in the vertical direction.

[0022] In one possible implementation, the pixel circuit devices in the pixel circuit layer are disposed vertically outside the high transmittance region.

[0023] In one possible implementation, the diameter of the microhemispherical transparent crystalline structure is no greater than 10 μm.

[0024] Secondly, embodiments of this application provide a display device, including a photosensitive element and any of the display substrates described in this application;

[0025] The photosensitive element is disposed on the non-display side of the display substrate and is at least partially located in the light-transmitting display area.

[0026] Beneficial effects of the embodiments in this application:

[0027] The display substrate and display device provided in this application include a display substrate comprising a normal display area and a light-transmitting display area. The light-transmitting display area includes a color filter layer and a lens layer. The lens layer includes multiple first optical lens structures, and the lens layer is located on the side of the color filter layer away from the substrate. In this application, a lens layer including first optical lenses is added above the color filter layer in the light-transmitting display area. The first optical lenses converge the light. There is a first gap between the black matrix embedded structures of two adjacent filters. The vertical position of the first optical lens structure corresponds to the vertical position of the first gap, allowing more external light to pass through the UDC area, thereby improving the transmittance of the UDC area.

[0028] Of course, implementing any product or method of this application does not necessarily require achieving all of the advantages described above at the same time. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained based on these drawings.

[0030] Figure 1 This is a first schematic diagram of a display substrate in related technologies;

[0031] Figure 2 This is a second schematic diagram of a display substrate in the related technology;

[0032] Figure 3 This is a schematic diagram of a display substrate according to an embodiment of this application;

[0033] Figure 4 This is another schematic diagram of the display substrate according to an embodiment of this application;

[0034] Figure 5-1 This is a cross-sectional schematic diagram of the light-transmitting display area according to an embodiment of this application;

[0035] Figure 5-2 This is another cross-sectional schematic diagram of the light-transmitting display area according to an embodiment of this application;

[0036] Figure 6 This is a top view of the light-transmitting display area according to an embodiment of this application;

[0037] Figure 7 This is another top view of the light-transmitting display area according to an embodiment of this application;

[0038] Figure 8This is a top view schematic diagram of an under-display electroluminescent layer according to an embodiment of this application;

[0039] Figure 9 This is another cross-sectional schematic diagram of the light-transmitting display area according to an embodiment of this application;

[0040] Figure 10 This is another cross-sectional schematic diagram of the light-transmitting display area according to an embodiment of this application;

[0041] Figure 11 This is another top view of the light-transmitting display area according to an embodiment of this application;

[0042] Figure 12 This is another cross-sectional schematic diagram of the light-transmitting display area according to an embodiment of this application;

[0043] Figure 13 This is another top view of the light-transmitting display area according to an embodiment of this application;

[0044] Figure 14 This is another cross-sectional schematic diagram of the light-transmitting display area according to an embodiment of this application;

[0045] Figure 15 This is a schematic diagram of a pixel circuit in related technologies;

[0046] Figure 16 This is another schematic diagram of a pixel circuit in related technologies;

[0047] Figure 17 This is another cross-sectional schematic diagram of the light-transmitting display area in an embodiment of this application.

[0048] Explanation of reference numerals in the attached figures:

[0049] Transmittance display area 10, normal display area 20;

[0050] Lens layer 101, color filter layer 102, substrate 103, bottom thin film layer 1031, flexible layer 1032, pixel circuit layer 105, electroluminescent layer 106, thin film encapsulation layer 107, black matrix layer 108, insulating layer 109; electromagnetic film layer 110, image sensor layer 111.

[0051] First optical lens structure 1011;

[0052] Filter 1021;

[0053] Second optical lens structure 1041;

[0054] Anode layer 1061, black pixel definition layer 1062, light-emitting layer 1063, common light-emitting layer 1064, cathode layer 1065;

[0055] Black matrix embedding structure 1081;

[0056] High transmittance region 10611 and high reflectance region 10622. Detailed Implementation

[0057] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art based on this application are within the scope of protection of this application.

[0058] In related technologies, to increase the light transmittance of the UDC area, the following methods are used: Figure 1 and Figure 2 As shown, in Figure 1 In the diagram, the UDC region is located to the right of the transition region. A lens structure is fabricated on the PDL (pixel-defined layer), and a COE (Color filter on encapsulation) method is usually used to replace the polarizer. Due to the large vertical distance between the color filter layer and the PDL (usually greater than 10 micrometers), a large portion of the external light is blocked by the color filter layer, so the light transmission cannot be further improved through the lens structure on the PDL side. Among them, the OC layer is an insulating layer, the TFE layer is a thin film encapsulation layer, PLN4 is a planarization layer 4, PLN3 is a planarization layer 3, PLN2 is a planarization layer 2, PLN1 is a planarization layer 1, PVX is a passivation layer, ILD is an interlayer dielectric layer, GI2 is a non-metallic layer 2, GI1 is a non-metallic layer 1, Barrier2 is an isolation layer 2, Barrier1 is an isolation layer 1, PI2 is a flexible layer 2, PI1 is a flexible layer 1, and PS is a spacer.

[0059] In view of this, embodiments of this application provide a display substrate, see below. Figure 3 and Figure 4 It includes: a normal display area 20 and a light-transmitting display area 10;

[0060] The light-transmitting display area 10 includes a color filter layer 102 and a lens layer 101. The lens layer 101 includes a plurality of first optical lens structures 1011. The lens layer 101 is located on the side of the color filter layer 102 away from the substrate.

[0061] Typically, the under-display camera is located below the display substrate (away from the light-emitting side of the display substrate). The CF layer (Color Filter, color filter layer 102) is used to filter the color of the emitted light and is usually close to the light-emitting side. In this embodiment, the lens layer 101 is disposed on the side of the color filter layer 102 away from the substrate, that is, the lens layer 101 is closer to the outside of the screen than the color filter layer 102. Therefore, when the under-display camera is used for image acquisition, the external light first passes through the lens layer 101. The lens layer 101 includes multiple first optical lens structures 1011, which are used to converge the external light, allowing more external light to pass through the UDC area. The high-transmittance lens layer 101 can be prepared by alignment and attachment, by film lamination, or by exposure, development, and etching, all of which are within its own protection scope.

[0062] In one example, the first optical lens structure 1011 can be located above the non-light-emitting portion of the light-transmitting display area 10, that is, the horizontal position of the first optical lens structure 1011 corresponds to the horizontal position of the non-light-emitting portion of the light-transmitting display area 10. In the embodiments of this application, both the horizontal and vertical directions refer to the display substrate, for example... Figure 3 As shown, the horizontal direction refers to the direction along the display substrate film layer, and the vertical direction refers to the direction perpendicular to the display substrate film layer.

[0063] In this embodiment of the application, a lens layer 101 including a first optical lens structure is added above the color filter layer 102 of the light-transmitting display area 10. The first optical lens structure 1011 is used to converge the light before the color filter layer 102 blocks the external light, so that more external light can pass through the UDC area, thereby improving the transmittance of the UDC area.

[0064] In addition to the color filter layer 102 and the lens layer 101, the light-transmitting display area 10 also needs to include several functional layers commonly found in display substrates. In one possible implementation, see... Figure 5-1 The light-transmitting display area 10 further includes: a substrate 103, a pixel circuit layer 105, an electroluminescent layer 106, a thin film encapsulation layer 107, a black matrix layer 108, and an insulating layer 109.

[0065] The flexible layer 1032 is located on the side of the bottom thin film layer 1031 away from the substrate. The pixel circuit layer 105 is located on the side of the flexible layer 1032 away from the substrate. The electroluminescent layer 106 is located on the side of the pixel circuit layer 105 away from the substrate. The thin film encapsulation layer 107 is located on the side of the electroluminescent layer 106 away from the substrate. The black matrix layer 108 and the color filter layer 102 are both located on the side of the thin film encapsulation layer 107 away from the substrate. The insulating layer 109 is located on the side of the color filter layer 102 away from the substrate.

[0066] The color filter layer 102 includes multiple sets of filters 1021, and the black matrix layer 108 includes multiple black matrix embedding structures 1081. The black matrix embedding structures 1081 are embedded in the filters 1021 in the horizontal direction and surround the filters 1021. There is a first interval between the black matrix embedding structures 1081 of two adjacent sets of filters 1021. The position of the first optical lens structure 1011 in the vertical direction corresponds to the position of the first interval in the vertical direction. Each set of filters 1021 corresponds to one sub-pixel.

[0067] The substrate 103 is the substrate film layer of the display substrate, and is generally made of flexible material. For example, such as... Figure 5-2As shown, the substrate 103 may include a bottom film layer 1031 and a flexible layer 1032. The bottom film layer 1031 typically serves as the film layer in contact with the under-display camera, protecting it. The PI (Polyimide Film) flexible layer 1032 is located on the side of the bottom film layer 1031 away from the substrate. The pixel circuit layer 105 includes multiple film layer structures, which can be arranged according to the actual pixel circuit design requirements; this application does not impose specific limitations. The EL (Electroluminescent) layer 106 is located on the side of the pixel circuit layer 105 away from the substrate, and emits light under the control of the pixel circuit. The TFE (Thin-Film Encapsulation) layer 107 is located on the side of the electroluminescent layer 106 away from the substrate, and encapsulates the electroluminescent layer 106 to provide insulation and protection. Both the BM (Black Matrix, also known as the black photoresist layer) 108 and the color filter layer 102 are located on the side of the thin-film encapsulation layer 107 away from the substrate. The black matrix layer 108 includes multiple black matrix embedded structures 1081, which are used to block light. The OC (insulating layer) 109 is located on the side of the color filter layer 102 and the black matrix layer 108 away from the substrate and can be made of a transparent insulating material. The lens layer 101 is located on the side of the insulating layer 109 away from the substrate and is used to converge light incident on the display substrate from the outside.

[0068] The black matrix embedded structure 1081 and the filter 1021 can be set on the same horizontal plane, such as Figure 5-2 As shown, the black matrix embedding structure 1081 embeds the filter 1021 in the horizontal direction and surrounds the filter 1021. In one example, the thickness of the black matrix embedding structure 1081 is less than the thickness of the filter 1021, and the edge of the filter 1021 covers the top of the black matrix embedding structure 1081. Using this structure can effectively reduce light leakage caused by the gap between the black matrix embedding structure 1081 and the filter 1021.

[0069] Typically, a pixel comprises three sub-pixels: red, green, and blue. In this embodiment, each group of filters 1021 corresponds to one sub-pixel. A group of filters 1021 may include only one filter 1021 or multiple filters 1021. For example,... Figure 3As shown, a set of filters corresponding to a red subpixel includes only one red filter, a set of filters corresponding to a green subpixel includes two green filters, and a set of filters corresponding to a blue subpixel includes only one blue filter. Here, R represents a red filter, G represents a green filter, and B represents a blue filter. It is understood that the shape and number of filters 1021 in each set of filters 1021 can be set according to the actual subpixel layout requirements, and all are within the scope of protection of this application.

[0070] There is a first gap between the black matrix embedding structures 1081 of two adjacent sets of filters 1021, such as in one example. Figure 6 As shown, the position of the first optical lens structure 1011 in the vertical direction corresponds to the position of the first interval in the vertical direction, and they can be set in the same vertical position.

[0071] In this embodiment, the position of the first optical lens structure 1011 in the vertical direction corresponds to the position of the first interval in the vertical direction. After the first optical lens structure 1011 converges the external light, it can be transmitted to the camera below the light-transmitting display area 10 through the first interval, thereby enabling more external light to pass through the UDC area and improving the transmittance of the UDC area.

[0072] The first optical lens structure 1011 is used to converge external light, and therefore can adopt a convex structure; in one possible embodiment, the first optical lens structure 1011 is a semi-cylindrical or micro-hemispherical transparent crystalline structure. In one example, such as... Figure 6 As shown, the first optical lens structure 1011 can be a semi-cylindrical transparent crystalline structure. In one example, such as... Figure 7 As shown, the first optical lens structure 1011 can be a micro-hemispherical transparent crystalline structure.

[0073] The semi-cylindrical transparent lens structure has a larger volume but a simpler fabrication process. Compared to the micro-hemispherical transparent lens structure, using a semi-cylindrical transparent lens structure for the first optical lens structure 1011 reduces the complexity of the manufacturing process and lowers the fabrication cost of the display substrate. However, because the semi-cylindrical transparent lens structure is larger, it cannot effectively cover the non-light-emitting portion of the UDC area. Therefore, a micro-hemispherical transparent lens structure can be used. Compared to the semi-cylindrical transparent lens structure, when the first optical lens structure 1011 is a micro-hemispherical transparent lens structure, it can cover the non-light-emitting portion to a greater extent, thereby increasing the focusing ability of external light and increasing the amount of light incident on the camera. In one example, the diameter of the lens in the micro-hemispherical transparent lens structure can be controlled within 10 μm, thus improving the layout density.

[0074] In this embodiment, the first optical lens structure 1011 is a semi-cylindrical or micro-hemispherical transparent crystalline structure, which can effectively converge external light, thereby allowing more external light to pass through the UDC area and improving the transmittance of the UDC area.

[0075] The electroluminescent layer 106 comprises multiple film layer structures, which can be arranged according to the actual light-emitting design requirements. In one possible implementation, for example... Figure 8 As shown, the electroluminescent layer 106 includes: an anode layer 1061, a black pixel definition layer 1062, an emissive layer 1063, a common emissive layer 1064, and a cathode layer 1065.

[0076] The anode layer 1061 is located on the side of the pixel circuit layer 105 away from the substrate, the black pixel definition layer 1062 is located on the side of the pixel circuit layer 105 away from the substrate, the light-emitting layer 1063 is located on the side of the anode layer 1061 away from the substrate, the common light-emitting layer 1064 is located on the side of the light-emitting layer 1063 away from the substrate, and the cathode layer 1065 is located on the side of the common light-emitting layer 1064 away from the substrate.

[0077] For example Figure 8 As shown, the BPDL (Black Pixel Define Layer 1062) and Anode 1061 are located on the side of the pixel circuit layer 105 away from the substrate. The light-emitting layer 1063 is located on the side of the anode layer 1061 away from the substrate. The EL Common Layer 1064 is located on the side of the light-emitting layer 1063 and the black pixel define layer 1062 away from the substrate. The cathode layer 1065 is located on the side of the common light-emitting layer 1064 away from the substrate. In some examples, the under-display camera can be a structure separate from the display substrate; in some examples, the under-display camera can also be integrally formed with the display substrate, for example... Figure 9 As shown, the light-transmitting display area 10 also includes a Tape (electromagnetic film layer) 110 and an Image Sensor (image sensor layer) 111. The electromagnetic film layer 110 can be made of transparent plastic, and the image sensor layer 111 is used for imaging based on the received light. The electromagnetic film layer 110 is located on the side of the substrate of the bottom thin film layer 1031, and the image sensor layer 111 is located on the side of the substrate of the electromagnetic film layer 110.

[0078] Typically, a pixel includes three sub-pixels: red, green, and blue. In one possible implementation, the light-emitting layer 1063 includes three types of light-emitting layers 1063: a green light-emitting layer 1063, a blue light-emitting layer 1063, and a red light-emitting layer 1063.

[0079] The filter 1021 includes three types of filters: a green filter 1021, a blue filter 1021, and a red filter 1021. The vertical position of the green light-emitting layer 1063 corresponds to the vertical position of the green filter 1021, the vertical position of the blue light-emitting layer 1063 corresponds to the vertical position of the blue filter 1021, and the vertical position of the red light-emitting layer 1063 corresponds to the vertical position of the red filter 1021.

[0080] In this embodiment, a pair of color filters 1021 and light-emitting layer 1063 are in the same vertical position, which can improve the emissivity of emitted light. Under the same brightness, the intensity of light emitted by light-emitting layer 1063 can be reduced, thereby achieving energy saving.

[0081] To further improve the transmittance of the UDC area, in one possible implementation, see [link to implementation details]. Figure 10 A second optical lens structure 1041 is provided between the flexible layer 1032 and the pixel circuit layer 105. The position of the second optical lens structure 1041 in the vertical direction corresponds to the position of the first interval in the vertical direction.

[0082] Because the flexible layer 1032 and the bottom thin film layer 1031 are relatively thick (generally greater than 100 μm), they significantly block light, resulting in substantial light loss. Therefore, in this embodiment, a lens structure is fabricated on the flexible layer 1032, namely, a second optical lens structure 1041 is added to further converge the light, thereby better transmitting the light collected by the first optical lens structure 1011 above the CF layer to the image sensor of the camera. The position of the second optical lens structure 1041 can be as follows... Figure 10 and Figure 11 As shown, where Figure 10 This is a vertical cross-sectional view of the light-transmitting display area 10. Figure 11 A perspective view of the light-transmitting display area 10 in the horizontal direction. Figure 11 Only the filter 1021 and the second optical lens structure 1041 are shown in the diagram.

[0083] The second optical lens structure 1041 is used to converge external light, and therefore can be a convex structure; in one possible embodiment, the second optical lens structure 1041 is a semi-cylindrical or micro-hemispherical transparent crystalline structure.

[0084] The second optical lens structure 1041 can be the same as or different from the first optical lens structure 1011. For example, the second optical lens structure 1041 and the first optical lens structure 1011 can both be micro-hemispherical transparent lens structures; for example, the second optical lens structure 1041 and the first optical lens structure 1011 can both be semi-cylindrical transparent lens structures; for example, one of the second optical lens structure 1041 and the first optical lens structure 1011 can be a semi-cylindrical transparent lens structure and the other is a micro-hemispherical transparent lens structure, etc., all of which are within the protection scope of this application.

[0085] In related technologies, the anode layer 1061 is typically made of a highly reflective, opaque metallic material. However, to further increase the transmittance of the UDC region, in one possible implementation, such as... Figure 12 As shown, its structure includes a TFE (thinfilm encapsulation), a CPL (capping layer), a CTDMGAg (cathode), an ETL (electron transport layer), a HBL (hole block layer), an EML (emission layer), an EBL (electron block layer), a HIL (hole injection layer), and an anode layer 1061. The anode layer 1061 includes multiple anode structures, each including a high-transmittance region 10611 and a high-reflectance region 10622. The high-transmittance region 10611 uses a conductive material with a transmittance greater than a preset transmittance threshold, and the high-reflectance region 10622 uses a conductive material with a reflectance greater than a preset reflection threshold.

[0086] In related technologies, the anode layer 1061 is typically made of highly reflective, opaque metallic materials (such as Ti, Al, Ag, etc.). However, to meet the light transmittance requirements of the UDC region, in this embodiment, the anode structures in the anode layer 1061 are patterned, dividing the anode structures into a high-transmittance region 10611 and a high-reflectance region 10622, achieving the effect that the high-transmittance region 10611 of the anode layer 1061 has high transmittance, while the high-reflectance region 10622 has high reflectance. The preset transmittance threshold and preset reflection threshold can be customized according to the actual requirements of the product, and are not specifically limited in this application.

[0087] The high-transmittance region 10611 can use a high-transmittance anolyte material (such as ITO), thus enabling OLED (Organic Light-Emitting Diode) illumination. However, to ensure OLED display efficiency, a portion of the high-reflectivity anode region, i.e., the high-reflectivity region 10622, still needs to be retained to improve display quality. The OLED device structure is as follows. Figure 11 As shown, the OLED anode structure has a high transmittance region 10611 and a high reflectance region 10622.

[0088] The patterns of the high-transmittance region 10611 and the high-reflectance region 10622 in the anode structure can be configured according to actual conditions, for example, half can be set as the high-transmittance region 10611 and the other half as the high-reflectance region 10622. In one possible implementation, the high-transmittance region 10611 is located at the center of the anode structure; the high-reflectance region 10622 is arranged horizontally around the high-transmittance region 10611.

[0089] A high-transmittance region 10611 is located at the center of the anode structure, and a high-reflectance region 10622 is horizontally disposed around the high-transmittance region 10611. In one possible embodiment, the vertical position of the high-transmittance region 10611 corresponds to the vertical position of the light-emitting layer 1063. The high-transmittance region 10611 may be positioned identically to the light-emitting layer 1063 (filter 1021) in the vertical direction to further increase light transmittance. For example... Figure 9 and Figure 13 As shown, where Figure 9 This is a vertical cross-sectional view of the light-transmitting display area 10. Figure 13 A perspective view of the light-transmitting display area 10 in the horizontal direction. Figure 13 Only the filter 1021 and the high transmittance region 10611 are shown in the illustration. In this embodiment, there is no special requirement for the shape of the high reflectance region 10622. It can be circular or rectangular, etc., all of which are within the protection scope of this application.

[0090] In one possible implementation, the position of the first optical lens structure 1011 in the vertical direction corresponds to the position of the high transmittance region 10611 in the vertical direction.

[0091] Adding a lens structure above the high-transmittance area 10611 of the light-emitting pixel allows external light above the pixel to enter the under-display camera through the anode high-transmittance area 10611. This greatly increases the light transmittance of the UDC area, thereby improving the intensity of light received by the under-display camera. Its structure can be as follows: Figure 14As shown. It can be understood that the anode structure is divided into a high-transmittance region 10611 and a high-reflectance region 10622, its function being to improve the ability of external light to enter the camera sensor, which is fundamentally different from the EL light extraction structure in related technologies. The pixel circuit in this application can adopt the pixel circuit in related technologies, for example... Figure 15 The pixel circuit of the 7T1C shown, or as... Figure 16 The pixel circuit shown in the 4T2C diagram is not limited in its specific structure in this application. T1-T6 represent transistors, C1, C2, and Cst represent capacitors, Reset represents the reset signal, EM represents the scan control signal, DTFT represents the driving transistor, ELVDD and VDD represent the positive terminal signals of the power supply voltage, ELVSS and VSS represent the negative terminal signals of the power supply voltage, Gate represents the gate control signal, Data represents the data signal, Vint represents the initial voltage signal, and N1 and N2 represent the corresponding points in the circuit.

[0092] In one possible implementation, the pixel circuit devices in the pixel circuit layer 105 are vertically disposed outside the high-transmittance region 10611. In one example, to further improve the transmittance of the high-transmittance region 10611, when designing the pixel circuit layer 105, the devices in the pixel circuit layer 105 should be positioned as far away from the high-transmittance region 10611 as possible in the vertical direction to improve light transmittance. For example, the pixel circuit structure can be external, i.e., the pixel circuit is disposed outside its corresponding anode, and the pixel circuit and anode are connected by a high-transmittance conductive material circuit, thereby improving the transmittance of the high-transmittance region 10611 of the anode layer 1061. Figure 17 As shown, Cover is the protective layer, OC layer is the insulating layer, TFE layer is the thin film encapsulation layer, PLN is the planarization layer, ILD is the interlayer dielectric layer, GI2 is the non-metallic layer 2, GI1 is the non-metallic layer 1, Buffer is the buffer layer, Data is the data electrode, Gate1 is the gate electrode 1, Gate2 is the gate electrode 2, Active is the active layer, Glass is the glass layer, ITOFan Out is the indium tin oxide fan-out electrode, Anode1 is the high reflectivity region of the anode layer, Anode2 is the high transmittance region of the anode layer, EL is the electroluminescent layer, Cathode is the cathode layer, BM is the black matrix layer, and CF is the color filter layer.

[0093] This application provides a display device, including a photosensitive element and any of the display substrates described in this application;

[0094] The photosensitive element is disposed on the non-display side of the display substrate and is at least partially located in the light-transmitting display area.

[0095] The display side of a display substrate refers to the light-in and light-out side, while the non-display side refers to the side furthest from the light-in and light-out side. A photosensitive element is used to collect image data. In one example, the photosensitive element may include modules such as an under-display camera or a fingerprint module. The under-display camera includes a photosensor capable of collecting light passing through the display substrate.

[0096] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0097] The various embodiments in this specification are described in a related manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referred to each other.

[0098] The above description is merely a preferred embodiment of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application are included within the scope of protection of this application.

Claims

1. A display substrate, characterized by, The display substrate comprises: a normal display area and a light-transmitting display area; the light-transmitting display area comprises a substrate substrate, a pixel circuit layer, an electroluminescent layer, a thin film packaging layer, a black matrix layer, an insulating layer, a color filter layer and a lens layer; the lens layer comprises a plurality of first optical lens structures, and the lens layer is located on the side of the color filter layer away from the substrate substrate; the substrate substrate comprises a bottom thin film layer and a flexible layer; the pixel circuit layer is located on the side of the flexible layer away from the bottom thin film layer, the electroluminescent layer is located on the side of the pixel circuit layer away from the substrate substrate, the thin film packaging layer is located on the side of the electroluminescent layer away from the substrate substrate, and the black matrix layer and the color filter layer are both located on the side of the thin film packaging layer away from the substrate substrate; the insulating layer is located on the side of the color filter layer away from the substrate substrate; the color filter layer comprises a plurality of groups of filters, and the black matrix layer comprises a plurality of black matrix embedding structures; the black matrix embedding structure is embedded in the filter in the horizontal direction and surrounds the filter; there is a first interval between the black matrix embedding structures of two adjacent groups of filters; the position of the first optical lens structure in the vertical direction corresponds to the position of the first interval in the vertical direction; each group of filters corresponds to a sub-pixel; the electroluminescent layer comprises: an anode layer, a light-emitting layer, and a cathode layer; the anode layer comprises a plurality of anode structures, and the anode structure comprises a high-transmission area and a high-reflection area; wherein the position of the first optical lens structure in the vertical direction corresponds to the position of the high-transmission area in the vertical direction.

2. The display substrate of claim 1, wherein the electroluminescent layer further comprises a black pixel definition layer and a common light-emitting layer; the anode layer is located on the side of the pixel circuit layer away from the substrate substrate, the black pixel definition layer is located on the side of the pixel circuit layer away from the substrate substrate, the light-emitting layer is located on the side of the anode layer away from the substrate substrate, the common light-emitting layer is located on the side of the light-emitting layer away from the substrate substrate, and the cathode layer is located on the side of the common light-emitting layer away from the substrate substrate. 3.The display substrate of claim 2, wherein, the light-emitting layer comprises a green light-emitting layer, a blue light-emitting layer and a red light-emitting layer; the filters comprise green filters, blue filters and red filters; wherein the position of the green light-emitting layer in the vertical direction corresponds to the position of the green filter in the vertical direction, the position of the blue light-emitting layer in the vertical direction corresponds to the position of the blue filter in the vertical direction, and the position of the red light-emitting layer in the vertical direction corresponds to the position of the red filter in the vertical direction. 4.The display substrate of claim 2, wherein, the first optical lens structure is a semi-cylindrical or micro-hemispherical transparent lens structure.

5. The display substrate of claim 1, wherein, second optical lens structures are arranged between the flexible layer and the pixel circuit layer, and the position of the second optical lens structure in the vertical direction corresponds to the position of the first interval in the vertical direction. 6.The display substrate of claim 5, wherein, the second optical lens structure is a semi-cylindrical or micro-hemispherical transparent lens structure. 7.The display substrate of claim 2, wherein, The high-transmission region adopts a conductive material with a light transmittance greater than a preset light transmittance threshold, and the high-reflection region adopts a conductive material with a reflectivity greater than a preset reflectivity threshold. 8.The display substrate of claim 7, wherein, The high-transmission region is located at the center of the anode structure, and the high-reflection region is arranged around the high-transmission region in the horizontal direction. 9.The display substrate of claim 7, wherein, The high-transmission region is located at a position corresponding to the position of the light-emitting layer in the vertical direction. 10.The display substrate of claim 7, wherein, The pixel circuit device in the pixel circuit layer is arranged outside the high-transmission region in the vertical direction. 11.The display substrate of claim 4 or 6, wherein, The diameter of the micro-hemispherical transparent lens structure is not greater than 10 μm.

12. A display device comprising a light-sensing element and the display substrate according to any one of claims 1-11. The light-sensing element is arranged on the side of the display substrate away from the display surface and at least partially located in the light-transmissive display region.

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