Shunt resistance device and method for adjusting characteristics of shunt resistance device for current detection

Abstract

The present invention relates to a jumper element, a shunt resistance device, and a method for adjusting characteristics of a shunt resistance device for current detection. A jumper element (10) for constituting a shunt resistance device for current detection is made of an electrically conductive metal material. The jumper element (10) has a main body portion (11) capable of being joined to a resistor body (5) constituting a part of the shunt resistance device, and a protruding portion (12) formed at a side portion of the main body portion (11), the protruding portion (12) being positioned so as not to overlap the resistor body (5).

Description

TECHNICAL FIELD

[0001] The present application relates to a jumper element, a shunt resistance device, and a method for adjusting characteristics of a shunt resistance device for current detection. BACKGROUND

[0002] In the past, as a component mounted on a circuit substrate such as a printed board, a jumper element has been used. In a circuit substrate, a jumper element is used for the purpose of short-circuiting between mounting pads, or for the purpose of connecting components and wiring patterns, in a case where it is necessary to cross over a wiring, or in a case where an electronic component is not necessary at the time of design.

[0003] On the other hand, a shunt resistor that makes current flow through a resistance body and detects the magnitude of the current from the voltage across both ends thereof is used as a component mounted on a circuit substrate. The shunt resistor is widely used for current detection.

[0004] As an example, in Patent Literature 1, a shunt resistor in which an electrode and a resistance body are stacked, and a mounting structure thereof are disclosed. The shunt resistor described in Patent Literature 1 has a circular plate-shaped resistance body and two electrodes formed on both surfaces of the resistance body. One of the two electrodes is connected to a wiring (pad), and the other electrode is connected to a first bonding wire. A second bonding wire is connected to the wiring (pad), and a voltage drop in the shunt resistor is taken out through the first bonding wire and the second bonding wire. The potential difference between the first bonding wire and the second bonding wire is divided by the current flowing through the shunt resistor, and thus the resistance value of the shunt resistor is calculated.

[0005] PRIOR ART DOCUMENTS

[0006] PATENT LITERATURE

[0007] Patent Literature 1: Japanese Patent Application Publication No. 2018-170478 SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] However, in the above-described shunt resistor, the electrode connected to the first bonding wire has a potential distribution, and due to a shift in the connection position of the first bonding wire, sometimes the detected voltage, the detected resistance value, and the resistance temperature coefficient (T.C.R.) of the shunt resistor change. The resistance temperature coefficient is an index that shows the proportion of the change in the resistance value caused by temperature.

[0010] The present application has been achieved in view of the above-described problems, and has an object to provide a jumper element for constituting a shunt resistor device for current detection, which can suppress a variation in characteristics of the shunt resistor device caused by a connection position of a wiring for voltage detection connected to the jumper element. Further, the present application has an object to provide a shunt resistor device for current detection, which can suppress a variation in characteristics caused by a connection position of a wiring for voltage detection, and a method of adjusting characteristics of such a shunt resistor device.

[0011] Means for solving the problems

[0012] In one embodiment, a jumper element for constituting a shunt resistor device for current detection is provided, the jumper element being composed of an electrically conductive metal material, the jumper element including: a main body portion that is capable of being joined to a resistor body that constitutes a part of the shunt resistor device; and a protruding portion that is formed on a side portion of the main body portion, the protruding portion being located at a position that does not overlap the resistor body.

[0013] In one embodiment, the main body portion has a main body portion side first surface that is capable of being joined to the resistor body, and the protruding portion has a protruding portion side first surface that is located on the same side as the main body portion side first surface in a thickness direction of the jumper element, and a protruding portion side second surface that is a surface on the opposite side of the protruding portion side first surface.

[0014] In one embodiment, the protruding portion is formed with a slit that extends from a side surface of the protruding portion.

[0015] In one embodiment, a shunt resistor device for current detection is provided, the shunt resistor device including: a plate-shaped resistor body having a first surface and a second surface that is a surface on the opposite side of the first surface; and a terminal member composed of an electrically conductive metal material, the terminal member including: a main body portion that is joined to the first surface, and a protruding portion that is formed on a side portion of the main body portion, the protruding portion being located at a position that does not overlap the resistor body.

[0016] In one embodiment, the protruding portion is formed with a slit that extends from a side surface of the protruding portion.

[0017] In one embodiment, the shunt resistor device further includes a pair of wirings for detecting a potential difference in the resistor body, one of the pair of wirings being connected to the protruding portion.

[0018] In one embodiment, a method for adjusting the characteristics of a shunt resistor device for current detection is provided, the shunt resistor device including: a resistive body in the form of a plate having a first surface and a second surface that is the opposite side of the first surface; and a terminal member composed of a conductive metal material, the terminal member including a main body portion coupled to the first surface and a protruding portion formed on a side portion of the main body portion. The method for adjusting the characteristics of the shunt resistor device for current detection adjusts the resistance value and / or the temperature coefficient of resistance of the shunt resistor device by forming a gap in the protruding portion.

[0019] Effects of the Invention

[0020] According to the present invention, the potential distribution in the protruding portion has high uniformity. As a result, the variation in the characteristics of the shunt resistor device caused by the connection position of the wiring for voltage detection in the protruding portion can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0021] FIG. 1A is a perspective view schematically showing an embodiment of a shunt resistor device for current detection.

[0022] FIG. 1B is a perspective view of the shunt resistor device shown in FIG. 1A from the back side.

[0023] FIG. 1C is a side view of the shunt resistor device shown in FIG. 1A .

[0024] FIG. 2 is an exploded perspective view of the shunt resistor shown in FIGS. 1A-1C .

[0025] FIG. 3A is a perspective view schematically showing another embodiment of a shunt resistor device.

[0026] FIG. 3B is a side view of the shunt resistor device shown in FIG. 3A .

[0027] FIG. 4 is a perspective view of the shunt resistor device shown in FIG. 3A and FIG. 3B with the shunt resistor removed.

[0028] FIG. 5A is a graph showing the potential distribution in the portion located directly above the resistive body of the main body portion in the case where the bridging element does not have a protruding portion.

[0029] FIG. 5B is a graph for explaining the simulation conditions of FIG. 5A .

[0030] FIG. 6 is a view showing a state in which a plurality of voltage detection wiring and a jumper element are connected.

[0031] FIG. 7A is a view showing a potential distribution in a portion directly above a resistance body of a main body portion of the shunt resistor and a protruding portion. FIG. 2

[0032] FIG. 7B is a view showing a simulation condition for explaining FIG. 7A

[0033] FIG. 8 is a view for explaining a measurement position of a resistance value and a T.C.R. of the shunt resistor.

[0034] FIG. 9 is a graph showing a change in the resistance value of the shunt resistor according to the measurement position.

[0035] FIG. 10 is a graph showing a change in the T.C.R. of the shunt resistor according to the measurement position.

[0036] FIG. 11 is a perspective view schematically showing another embodiment of the shunt resistor.

[0037] FIG. 12 is a perspective view schematically showing still another embodiment of the shunt resistor.

[0038] FIG. 13 is a perspective view schematically showing still another embodiment of the shunt resistor.

[0039] FIG. 14 is a perspective view schematically showing still another embodiment of the shunt resistor.

[0040] FIG. 15 is a graph showing a change in the resistance value of the shunt resistor according to the measurement position as shown in FIGS. 11-13

[0041] FIG. 16 is a graph showing a change in the T.C.R. of the shunt resistor according to the measurement position as shown in FIGS. 11-13

[0042] is a perspective view schematically showing still another embodiment of the shunt resistor device. FIG. 17

[0043] is a perspective view schematically showing FIG. 18 FIG. 17

[0044] FIG. 19 ​​​​​is a perspective view schematically showing another embodiment of a shunt resistor device.

[0045] FIG. 20 is FIG. 19 an exploded perspective view of the shunt resistor device shown in

[0046] (Explanation of Reference Numerals)

[0047] 1: shunt resistor; 5: resistor body; 5a: first surface; 5b: second surface; 6: electrode; 7: electrode; 8: shunt resistor; 10: jumper element; 11: main body portion; 11a: main body portion side first surface; 11b: main body portion side second surface; 11c: side surface; 12: protruding portion; 12a: protruding portion side first surface; 12b: protruding portion side second surface; 12c, 12d: side surface; 13, 13a, 13b: slit; 14: terminal portion; 21: wiring pattern; 22: wiring pattern; 23: lead wire; 24: wiring; 25: wiring; 32: wiring. DETAILED DESCRIPTION

[0048] Hereinafter, an embodiment of the present application will be described with reference to the drawings. Also, in the drawings described below, the same or equivalent constituent elements are given the same reference numerals and repeated description is omitted. Herein, a shunt resistor device is defined as a device for current detection including at least a shunt resistor. As examples of the shunt resistor device, a shunt resistor itself, a device equivalent to the shunt resistor constituted by being mounted to a circuit board or the like, and a state in which various wirings are connected and mounted to the shunt resistor (mounting structure of the shunt resistor) can be given.

[0049] FIG. 1A is a perspective view schematically showing an embodiment of a shunt resistor device for current detection, FIG. 1B is a perspective view when the shunt resistor device shown in FIG. 1A is viewed from the back, FIG. 1C is FIG. 1A a side view of the shunt resistor device shown in. As shown in FIGS. 1A-1C , the shunt resistor device is provided with a shunt resistor 1. In other words, the shunt resistor device of the present embodiment is the shunt resistor 1 itself. The shunt resistor 1 is provided with: a resistor body 5 having a plate shape (thin plate shape) having a prescribed thickness and width; an electrode 6 having a plate shape (thin plate shape) composed of an electrically conductive metal material; and a jumper element (also referred to as a terminal member) 10 composed of an electrically conductive metal material.

[0050] As an example of the material of the resistor body 5, a low-resistance alloy material such as a Cu-Mg-Ni-based alloy can be given. As an example of the materials of the electrode 6 and the jumper element 10, copper (Cu) as a high-conductivity metal can be given.

[0051] The resistor body 5 has a first surface 5a and a second surface 5b which is a surface opposite to the first surface 5a. The jumper element 10 is connected (or joined) to the first surface 5a of the resistor body 5, and the electrode 6 is connected to the second surface 5b of the resistor body 5. That is, the electrode 6, the resistor body 5, and the jumper element 10 are stacked in this order in the thickness direction of the shunt resistor 1. The thickness direction of the shunt resistor 1 is a direction perpendicular to both the first direction and the second direction. The first direction is the length direction of the shunt resistor 1. The second direction is the width direction of the shunt resistor 1, and is a direction perpendicular to the first direction.

[0052] The jumper element 10 has a plate-shaped main body portion 11, a protruding portion 12 formed at a side portion of the main body portion 11, and a terminal portion 14 formed at a main body side first surface 11a of the main body portion 11. The main body portion 11, the protruding portion 12, and the terminal portion 14 are integrally formed of the same material. The resistor body 5 is connected (or joined) to the main body side first surface 11a of the main body portion 11.

[0053] FIG. 2 is FIGS. 1A-1C An exploded perspective view of the shunt resistor 1 is shown. In one embodiment, the first surface 5a and the second surface 5b of the resistor body 5 are connected (joined) to the jumper element 10 and the electrode 6, respectively, by welding such as press welding, or joining based on solder, metal nano particles (silver paste using silver nano particles, copper paste using copper nano particles), or the like. In order to enable solder mounting, surface treatment such as Sn plating is performed on the terminal portion 14 and the electrode 6.

[0054] The terminal portion 14 and the resistor body 5 are separated from each other in the first direction. Similarly, the terminal portion 14 and the electrode 6 are separated from each other in the first direction. In other words, the first direction can also be referred to as the direction in which the resistor body 5 and the terminal portion 14 are arranged.

[0055] As described above, the protruding portion 12 is formed at the side portion of the main body portion 11. Specifically, the protruding portion 12 is formed at a side surface 11c of the main body portion 11, and protrudes from the side surface 11c toward the second direction. The side surface 11c is a surface parallel to the first direction. The protruding portion 12 is positioned so as not to overlap the resistor body 5. In other words, the protruding portion 12 is positioned so as not to overlap the resistor body 5 in the thickness direction of the shunt resistor 1, and does not directly contact the resistor body 5. More specifically, the protruding portion 12 is formed at a portion positioned directly above the resistor body 5 of the main body portion 11 when the first surface 5a of the resistor body 5 is up and the second surface 5b is down. In one embodiment, the protruding portion 12 can also be formed at a side surface of the main body portion 11 parallel to the second direction.

[0056] The protrusion 12 has a protrusion-side first surface 12a on the same side as the main body portion-side first surface 11a in the thickness direction of the shunt member 10 (i.e., the thickness direction of the shunt member 10). Specifically, the main body portion-side first surface 11a and the protrusion-side first surface 12a are on the same plane. The main body portion 11 has a main body portion-side second surface 11b as a surface on the opposite side of the main body portion-side first surface 11a, and the protrusion 12 has a protrusion-side second surface 12b as a surface on the opposite side of the protrusion-side first surface 12a. Specifically, the main body portion-side second surface 11b and the protrusion-side second surface 12b are on the same plane.

[0057] FIG. 3A is a perspective view schematically showing another embodiment of the shunt resistance device, FIG. 3B is FIG. 3A a side view of the shunt resistance device shown in FIG. 3A and FIG. 3B , the shunt resistance device further has wiring patterns 21, 22 on which the shunt resistor 1 is mounted, and a pair of wirings 24, 25 for detecting a potential difference in the resistance body 5 (a potential difference occurring between the first surface 5a and the second surface 5b). The wirings 24, 25 function as voltage detection terminals.

[0058] The wiring patterns 21, 22 are mounted on a circuit substrate such as a printed board, and are arranged separately from each other. The terminal portion 14 and the electrode 6 are connected (joined) to the wiring pattern 21 and the wiring pattern 22, respectively, by soldering, and a current path is constituted by the shunt resistor 1, the wiring pattern 21, and the wiring pattern 22.

[0059] FIG. 4 is a perspective view showing a state in which the shunt resistance device shown in FIG. 3A and FIG. 3B is removed of the shunt resistor 1. As shown in FIG. 4 , the shunt resistor 1 is mounted in a region 28 enclosed by a broken line in the figure. As shown in FIG. 4 , a lead 23 is drawn from the wiring pattern 22. The lead 23 extends in the second direction after extending from the wiring pattern 22 toward the wiring pattern 21. The wiring 24 is connected to the lead 23, and the wiring 25 is connected to the protrusion-side second surface 12b of the protrusion 12.

[0060] In one embodiment, the wirings 24, 25 are bonding wires, and the wirings 24, 25 are connected to the lead 23 and the protrusion-side second surface 12b, respectively, by wire bonding. The lead 23 and the protrusion 12 function as bonding pads. In order to enable wire bonding, surface treatment such as Ni-P plating is performed on the lead 23 and the protrusion-side second surface 12b.

[0061] According to the present embodiment, the potential difference between the wiring 24 and the wiring 25 (i.e., the potential difference in the resistor body 5) generated by the measured current flowing through the shunt resistor 1 can be measured from the wirings 24, 25. In the present embodiment, the potential difference in the resistor body 5 is measured by a voltmeter 26 configured with a voltage measurement IC or the like. In addition, an example in which the voltage signal is input to the voltmeter 26 through the wirings 24 and 25 is shown, but the lead 23 can be directly connected to the voltmeter 26. In this case, the lead 23 and the wiring 25 function as a pair of wirings for detecting the potential difference.

[0062] FIG. 5A is a graph showing the potential distribution in the portion located directly above the resistor body 5 of the main body 11 in the case where the jumper element 10 does not have the protrusion 12. FIG. 5A is a contour map showing the results of simulation of the potential distribution. FIG. 5B is a graph for explaining the simulation conditions of FIG. 5A . The portion 16 located directly above the resistor body 5 of the main body 11 is the portion shown with a dot in FIG. 5B . As shown in FIG. 5B , the terminal portion 14 of the shunt resistor 1 and the electrode 6 are connected to the conductive soldering regions 34, 36, respectively, and a prescribed current flows from the soldering region 34 to the soldering region 36 via the shunt resistor 1.

[0063] As shown in FIG. 5A , the potential distribution is generated in the region 16. Therefore, in the case where the jumper element 10 does not have the protrusion 12 and the wirings are directly connected to the main body 11 and the voltage of the resistor body 5 is taken out, depending on the connection positions of the wirings, the detected voltage (the potential difference in the resistor body 5), the detected resistance value, and the resistance temperature coefficient (T.C.R.) of the shunt resistor 1 sometimes change.

[0064] In addition, as shown in FIG. 6 , in order to prevent deterioration and disconnection of the wirings over a long period of use, a plurality of wirings 32 for voltage detection (two wirings 32 in FIG. 6 ) are sometimes connected to the jumper element 10. Even in this case, the potential taken out differs depending on the connection positions of the wirings 32, and thus when any of the wirings 32 among the plurality of wirings 32 is disconnected, the detected resistance value and the resistance temperature coefficient (T.C.R.) sometimes change.

[0065] FIG. 7A is a view showing a portion located directly above the resistor 5 of the main portion 11 of the shunt resistor 1 and the potential distribution in the protruding portion 12. FIG. 2 is a view showing the potential distribution in the portion located directly above the resistor 5 of the main portion 11 of the shunt resistor 1 and the protruding portion 12. FIG. 7A is a contour map showing the results of the simulation of the potential distribution. FIG. 7B is a view showing the simulation conditions for explaining FIG. 7A the simulation results shown in FIG. 7B . The object 17 of the simulation is the portion located directly above the resistor 5 of the main portion 11 and the protruding portion 12, which are shown by the dots in FIG. 5A FIG. 5B . The simulation conditions not specifically explained are the same as those explained with reference to

[0066] As shown in FIG. 7A , the potential distributions in the protruding portions 12 are substantially the same, so that the potential of the portion of the main portion 11 adjacent to the protruding portion 12 spreads toward the protruding portion 12. That is, the potential distribution in the protruding portion 12 has high uniformity. Therefore, by connecting the wiring for voltage detection to the protruding portion 12 and taking out the voltage of the resistor 5, it is possible to suppress the changes in the detected voltage, the detected resistance value, the temperature coefficient of resistance (T.C.R.) of the shunt resistor device due to the connection position of the wiring. As a result, it is possible to suppress the deviation in the characteristics of the shunt resistor device caused by the connection position of the wiring for voltage detection in the protruding portion 12.

[0067] In addition, in the present embodiment, the potential distribution in the main portion 11 spreads significantly in the first direction (refer to FIG. 1A ). Therefore, by staggering the positions of the protruding portions 12, it is possible to cause changes in the detected resistance value, T.C.R.

[0068] FIG. 8 is a view for explaining the measurement positions of the resistance value and T.C.R. of the shunt resistor 1, FIG. 9 is a graph showing the changes in the resistance value of the shunt resistor 1 according to the measurement position, FIG. 10 is a graph showing the changes in the T.C.R. of the shunt resistor 1 according to the measurement position.

[0069] In the present embodiment, the terminal portions 14 and the electrodes 6 are connected to the soldering areas 34, 36, respectively. FIG. 9 and FIG. 10 respectively show an arbitrary reference point at the same potential as the soldering area 36 and FIG. 8 ​The simulation results show the resistance value between a point on line A and B (hereinafter referred to as the measurement position) and the TCR of the shunt resistor 1 at the measurement position. In this embodiment, the set resistance value (i.e., the ideal resistance value) of the shunt resistor 1 is 100 μΩ.

[0070] FIG. 9 and FIG. 10 The horizontal axis shows the resistance value and the measurement location of TCR in the first direction. FIG. 9 The vertical axis shows the resistance value at each measurement location. FIG. 10 The vertical axis shows the TCR at each measurement location. FIG. 9 and FIG. 10 In the diagram, the solid line represents the resistance value and TCR on line A, and the dashed line represents the resistance value and TCR on line B.

[0071] Line A and line B are imaginary lines extending in the first direction on the second surface 11b on the main body side and the second surface 12b on the protrusion side, respectively. FIG. 8 The lines L1, L2, L3, and L4 shown indicate positions of 0 mm, 1.5 mm, 3.0 mm, and 5.0 mm in the first direction. Regarding... FIG. 8 The dimensions of the main body 11 and the protrusion 12 shown are just an example, and the dimensions of the shunt resistor 1 and its constituent elements are not limited to this embodiment.

[0072] like FIG. 9 and FIG. 10 As shown, the changes in resistance and TCR in line B are significantly reduced compared to those in line A. In other words, on line B, the simulation results show that approximately the same resistance and TCR can be obtained regardless of the measurement position. As a result, deviations in the characteristics of the shunt resistor 1 caused by the connection position of the wiring for voltage detection in the protrusion 12 (i.e., deviations in the characteristics of the shunt resistor device) can be suppressed.

[0073] FIG. 11 This is a perspective view schematically illustrating another embodiment of the shunt resistor 1. Unless otherwise specified, the structure of this embodiment is the same as the embodiments described above, and therefore repeated descriptions are omitted. In this embodiment, the length of the protrusion 12 in the first direction is the same as the length of the resistor body 5 in the first direction.

[0074] FIG. 12is a perspective view schematically showing still another embodiment of the shunt resistor 1. The structure of the present embodiment not specifically mentioned is the same as that of the above-described embodiments, and thus the repeated description thereof is omitted. The jumper element 10 of the present embodiment has the slit 13 formed in the protruding portion 12. The slit 13 is an elongated cut. Specifically, the slit 13 extends from the side surface 12c of the protruding portion 12 to which the main body portion 11 is connected, toward the side surface 12d which is the opposite side of the side surface 12c. The side surface 12c is a side surface toward the outside of the shunt resistor 1, and the side surface 12d is a side surface toward the inside of the shunt resistor 1 (the direction in which the terminal portion 14 is arranged in the first direction).

[0075] In the present embodiment, the slit 13 is formed at the root of the protruding portion 12. In other words, the slit 13 is formed between the main body portion 11 and the protruding portion 12. As for the position of the slit 13, as long as the slit 13 extends from the side surface 12c of the protruding portion 12 to which the main body portion 11 is connected, it is not limited to the present embodiment.

[0076] FIG. 13 is a perspective view schematically showing still another embodiment of the shunt resistor 1. The details of the present embodiment not specifically mentioned are the same as those of the embodiment described with reference to FIG. 12 , and thus the repeated description thereof is omitted. The slit 13 of the present embodiment extends from the side surface 12d of the protruding portion 12 to which the main body portion 11 is connected, toward the side surface 12c, in this respect differing from the embodiment shown in FIG. 12 . As for the position of the slit 13, as long as the slit 13 extends from the side surface 12d of the protruding portion 12 to which the main body portion 11 is connected, it is not limited to the present embodiment.

[0077] FIG. 14 is a perspective view schematically showing still another embodiment of the shunt resistor 1. The details of the present embodiment not specifically mentioned are the same as those of the embodiment described with reference to FIG. 12 and FIG. 13 , and thus the repeated description thereof is omitted. As for the present embodiment, the slit 13a extending from the side surface 12c toward the side surface 12d and the slit 13b extending from the side surface 12d toward the side surface 12c are formed in the protruding portion 12, in this respect differing from the embodiments shown in FIG. 12 and FIG. 13 . The structure of the slits 13a, 13b not specifically mentioned is the same as that of the slit 13 described with reference to FIG. 12 and FIG. 13 . The embodiment described with reference to FIGS. 11-14 is also applicable to the embodiments described with reference to FIG. 3A , FIG. 3B and FIG. 4 .

[0078] FIG. 15 is a perspective view schematically showing still another embodiment of the shunt resistor 1. The details of the present embodiment not specifically mentioned are the same as those of the embodiment described with reference to FIGS. 11-13A graph showing the change in the resistance value of the shunt resistor 1 according to the measurement position, FIG. 16 is a graph showing FIGS. 11-13 A graph showing the change in the T.C.R. of the shunt resistor 1 according to the measurement position. FIG. 15 and FIG. 16 respectively show an arbitrary reference point and FIGS. 11-13 A simulation result of the resistance value between a point on the straight lines C, D, E, F (hereinafter referred to as the measurement position) and the T.C.R. of the shunt resistor 1 at the measurement position. The simulation conditions are the same as those described with reference to FIGS. 8-10 The conditions described with reference to

[0079] The straight line C and the straight line D are imaginary straight lines extending in the first direction on the second surface 1 lb on the side of the main body portion of the shunt resistor 1 and the second surface 12b on the side of the protruding portion, respectively, the straight line E and the straight line F are imaginary straight lines extending in the first direction on the second surface 12b on the side of the protruding portion of the shunt resistor 1. FIG. 11 and FIG. 12 FIG. 13 The straight line C and the straight line D are imaginary straight lines extending in the first direction on the second surface 1 lb on the side of the main body portion of the shunt resistor 1 and the second surface 12b on the side of the protruding portion, respectively, the straight line E and the straight line F are imaginary straight lines extending in the first direction on the second surface 12b on the side of the protruding portion of the shunt resistor 1. FIG. 12 and FIG. 13 The depth (length in the first direction) of the slit 13 shown in FIGS. 11-13 The dimensions of the main body portion 11 and the protruding portion 12 shown in

[0080] FIG. 15 and FIG. 16 The horizontal axis of the graph shows the measurement position of the resistance value and the T.C.R. in the first direction, FIG. 15 The vertical axis of the graph shows the resistance value at each measurement position, FIG. 16 The vertical axis of the graph shows the T.C.R. at each measurement position. In FIG. 15 and FIG. 16 In the graphs of

[0081] As shown in FIG. 15 and FIG. 16 In the straight lines E, F, the values of the resistance value and the T.C.R. hardly change according to the measurement position. In addition, in the case where the slit 13 is added from the side surface 12c side, the values of the resistance value and the T.C.R. increase, and in the case where the slit 13 is added from the side surface 12d side, the values of the resistance value and the T.C.R. decrease. This is because, as shown in​FIG. 7A As shown, the potential on side 12d is higher than that on side 12c, and the potential of the portion of the main body 11 adjacent to the protrusion 12 extends to the protrusion 12.

[0082] In other words, if FIG. 12 If the depth of the slit 13 is varied in a shallower direction, the resistance value and TCR when measured at the second surface 12b on the protrusion side of the outer side of the slit 13 (opposite to the main body 11 in the second direction) are less than [a certain value]. FIG. 15 The values ​​shown (close to the resistance and TCR when the line D is used as the measurement position), if made FIG. 13 If the depth of the slit 13 is varied towards a shallower direction, then the resistance value and TCR when the second surface 12b on the protruding side of the outer side of the slit 13 are used as the measurement position are greater than [the value of the resistance value and TCR]. FIG. 15 The values ​​shown are close to the resistance and TCR values ​​when the line D is used as the measurement position.

[0083] Therefore, by forming the aforementioned slit 13 in the protrusion 12, the potential distribution of the protrusion 12 becomes more uniform. Thus, by forming the slit 13, the characteristics of the shunt resistor device, i.e., the resistance value and / or TCR of the shunt resistor device, can be adjusted. Specifically, by adjusting the direction and depth of the slit 13, the characteristics of the shunt resistor device, i.e., the resistance value and / or TCR of the shunt resistor device, can be adjusted when the second surface 12b on the protrusion side is used as the measurement position.

[0084] In one embodiment, the bridging element 10 and the shunt resistor may be pre-formed as separate components and fixed together during installation.

[0085] FIG. 17 This is a perspective view schematically showing another embodiment of the shunt resistor device. The structure of this embodiment, unless otherwise specified, is the same as that of the embodiments described above, and therefore repeated descriptions are omitted. The shunt resistor device of this embodiment includes a shunt resistor 8 and a bridging element 10 connected to the shunt resistor 8. In this embodiment, the shunt resistor 8 and the bridging element 10 are formed as separate components. The details of the bridging element 10, unless otherwise specified, are the same as in the embodiments described above. The first surface 11a of the main body portion 11 of this embodiment can be connected to the resistive element 5, which constitutes part of the shunt resistor 8. Specifically, the main body portion 11 can be connected (or linked) to the resistive element 5 via the electrode 7 described later.

[0086] FIG. 18 It is shown schematically. FIG. 17A perspective view of the shunt resistor 8. Unless otherwise specified, the structure of the shunt resistor 8 is the same as that of the shunt resistor 1, therefore repeated descriptions are omitted. The shunt resistor 8 differs from the shunt resistor 1 in that it has a plate-shaped (thin plate-shaped) electrode 7 made of conductive metal material instead of the bridging element 10.

[0087] One example of the material for electrode 7 is copper (Cu), a highly conductive metal. Electrode 7 is connected to the first surface 5a of resistor 5, and electrode 6, resistor 5, and electrode 7 are stacked in this order along the thickness direction of shunt resistor 8. FIG. 17 In the illustrated embodiment, the bridging element 10 is connected to the electrode 7. Specifically, the main body portion 11 of the bridging element 10 is connected to the first surface 5a of the resistor 5. More specifically, the first surface 11a of the main body portion 11 of the bridging element 10 is connected (or linked) to the first surface 5a of the resistor 5 via the electrode 7. The terminal portion 14 and the shunt resistor 8 are separated from each other in the first direction.

[0088] In this embodiment, the protrusion 12 is also located at a position that does not overlap with the resistor 5. In other words, the protrusion 12 is located at a position that does not overlap with the resistor 5 in the thickness direction of the shunt resistor device, and does not directly contact the shunt resistor 8. In one embodiment, the first surface 11a of the main body portion of the bridging element 10 is connected (bonded) to the electrode 7 by means of welding to the electrode 7 by means of pressure welding or the like, or by bonding to the electrode 7 by means of solder, metal nanoparticles (silver paste using silver nanoparticles, copper paste using copper nanoparticles), etc.

[0089] FIG. 19 This is a perspective view schematically illustrating another embodiment of the shunt resistor device. FIG. 20 yes FIG. 19 An exploded perspective view of the shunt resistor device shown. Details and references to this embodiment not specifically described. FIG. 3A , FIG. 3B and FIG. 4 The implementation method described is the same, therefore repeated descriptions are omitted. This implementation method is based on... FIG. 17 and FIG. 18 The shunt resistor device is installed at point 21, 22 in the wiring diagram. FIG. 3A , FIG. 3B and FIG. 4 The implementation shown differs. In this embodiment, the shunt resistor 8 is first mounted on the wiring pattern 22, the bridging element 10 is then mounted on it, and the terminal portion 14 is connected to the wiring pattern 21. In this embodiment, the current path is formed by the wiring pattern 21, the bridging element 10, the shunt resistor 8, and the wiring pattern 22.

[0090] In reference FIGS. 17-20The same effects as those described in the reference FIGS. 11-14 The same effects as those described in the reference FIGS. 17-20 The same effects as those described in the reference FIGS. 7A-16 The same effects as those described in the reference FIGS. 17-20 The same effects as those described in the reference

[0091] The above-described embodiments are described for the purpose of enabling a person having ordinary knowledge in the technical field to which the present application pertains to carry out the present application. Various modifications of the above-described embodiments are possible for a person skilled in the art, and the technical idea of the present application is applicable to other embodiments. Therefore, the present application is not limited to the described embodiments, but is interpreted as the widest scope defined by the technical idea according to the claims.

[0092] Industrial applicability

[0093] The present application is applicable to a shunt element, a shunt resistance device, and a shunt resistance device for current detection, and a characteristic adjustment method thereof.

Claims

1. A shunt resistor device, which is a shunt resistor device for current detection, comprising: a plate-shaped resistor body having a first surface and a second surface which is a surface opposite to the first surface; a terminal member composed of an electrically conductive metal material; and a plate-shaped electrode composed of an electrically conductive metal material, the plate-shaped electrode being joined to the first surface and the second surface, respectively, the terminal member comprising: a main body portion connected to the first surface via the plate-shaped electrode, and a protruding portion formed on a side portion of the main body portion, the main body portion having a main body portion side first surface connected to the first surface of the resistor body via the plate-shaped electrode, the protruding portion having a protruding portion side first surface located in the same plane as the main body portion side first surface and a protruding portion side second surface which is a surface opposite to the protruding portion side first surface in a thickness direction of the terminal member, the resistor body being sandwiched by the main body portion and the electrode and stacked in the thickness direction, and the protruding portion being connected to a wiring for detecting a potential difference in the resistor body and being located at a position not overlapping the resistor body, the protruding portion being formed with a slit extending from a side surface of the protruding portion.

3. A method of adjusting characteristics of a shunt resistor device for current detection, the shunt resistor device comprising: a plate-shaped resistor body having a first surface and a second surface which is a surface opposite to the first surface; a plate-shaped electrode composed of an electrically conductive metal material, the electrode being joined to the first surface and the second surface, respectively; a terminal member composed of an electrically conductive metal material, the terminal member comprising a main body portion connected to the first surface via the plate-shaped electrode and a protruding portion formed on a side portion of the main body portion; and a plate-shaped electrode composed of an electrically conductive metal material, the main body portion having a main body portion side first surface connected to the first surface of the resistor body via the plate-shaped electrode, the protruding portion having a protruding portion side first surface located in the same plane as the main body portion side first surface and a protruding portion side second surface which is a surface opposite to the protruding portion side first surface in a thickness direction of the terminal member, the resistor body being sandwiched by the main body portion and the electrode and stacked in the thickness direction, the protruding portion being connected to a wiring for detecting a potential difference in the resistor body and being located at a position not overlapping the resistor body, the method of adjusting characteristics of the shunt resistor device for current detection adjusting a resistance value and / or a temperature coefficient of resistance of the shunt resistor device by forming a slit in the protruding portion. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 2. The shunt resistance device of claim 1, wherein, ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​

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