Method for manufacturing semiconductor device, method for manufacturing temporary fixing film material, and temporary fixing film material

Abstract

Disclosed is a method for manufacturing a semiconductor device, which includes irradiating a temporary fixing laminate with light, thereby separating a semiconductor component from a temporary fixing resin layer. The temporary fixing laminate is formed by a method including a step of laminating a temporary fixing film material on a light absorbing layer with a first main surface in contact with the light absorbing layer; and a step of peeling a second peeling film from the temporary fixing film material so as to expose a second main surface. When the maximum value of the logarithmic decrement in a rigid body pendulum measurement of the first main surface and the second main surface of the temporary fixing resin layer is δ max 1 and δ max 2, respectively, δ max 2 is smaller than δ max 1.

Description

TECHNICAL FIELD

[0001] The present application relates to a method for manufacturing a semiconductor device, a method for manufacturing a film material for temporary fixing, and a film material for temporary fixing. BACKGROUND

[0002] A semiconductor device is manufactured by a method in which a semiconductor member is processed in a state of being temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Literature 1 discloses a method in which a semiconductor member is temporarily fixed to a support member via a temporary fixing material layer having a temporary fixing resin layer, and after processing is performed, the semiconductor member is separated from the support member by light irradiation.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: International Publication No. 2020 / 111193 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] A part of the resin of the temporary fixing material layer (temporary fixing resin layer) remains on the semiconductor member separated from the support member, and thus an unnecessary resin residue is sometimes generated.

[0008] An aspect of the present application relates to a method capable of inhibiting generation of a resin residue on a semiconductor member accompanying separation, in a case where a semiconductor device is manufactured by a method including separating a semiconductor member from a temporary fixing resin layer by light irradiation, and a film material for temporary fixing that can be used for the method.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] An aspect of the present application relates to a method for manufacturing a semiconductor device, the method comprising, in order, a step of forming a temporary fixing layered body having a support substrate having a support surface and a back surface on the opposite side thereof, a light absorbing layer, and a temporary fixing resin layer having a first main surface and a second main surface on the opposite side thereof, and in which the light absorbing layer and the temporary fixing resin layer are sequentially layered on the support surface; a step of temporarily fixing a semiconductor member on the temporary fixing resin layer; a step of irradiating light to the temporary fixing layered body from the back surface side; and a step of separating the semiconductor member from the temporary fixing resin layer.

[0011] The temporary fixing layered body is formed by a method including a step of preparing a temporary fixing film material having the temporary fixing resin layer, the first release film, and the second release film, and sequentially laminating the first release film, the temporary fixing resin layer, and the second release film in an orientation in which the first release film is in contact with the first main surface of the temporary fixing resin layer, and the second release film is in contact with the second main surface of the temporary fixing resin layer; a step of peeling the first release film from the temporary fixing film material, and laminating the temporary fixing film material on the light absorbing layer provided on the support surface in an orientation in which the exposed first main surface of the temporary fixing resin layer is in contact with the light absorbing layer; and a step of peeling the second release film from the temporary fixing film material to expose the second main surface of the temporary fixing resin layer. When the maximum values of the logarithmic decrement in the rigid body pendulum measurement of the first main surface and the second main surface of the temporary fixing resin layer are δ max 1 and δ max 2, respectively, δ max 2 is smaller than δ max 1.

[0012] Another aspect of the present application relates to a manufacturing method of a temporary fixing film material, including a step of forming a temporary fixing resin layer having a first main surface in contact with a first release film and a second main surface on the opposite side thereof on the first release film by applying a resin varnish containing a solvent on the first release film to form a film of the resin varnish, and then removing the solvent from the film; and a step of attaching a second release film to the second main surface of the temporary fixing resin layer. A peeling force of a surface of the first release film in contact with the temporary fixing resin layer is smaller than a peeling force of a surface of the second release film in contact with the temporary fixing resin layer.

[0013] Another aspect of the present application relates to a temporary fixing film material including a temporary fixing resin layer having a first main surface and a second main surface on the opposite side thereof, a first release film, and a second release film. The first release film, the temporary fixing resin layer, and the second release film are sequentially laminated in an orientation in which the first release film is in contact with the first main surface of the temporary fixing resin layer, and the second release film is in contact with the second main surface of the temporary fixing resin layer. When the maximum values of the logarithmic decrement in the rigid body pendulum measurement of the first main surface and the second main surface of the temporary fixing resin layer are δ max 1 and δ max 2, respectively, δ max 2 is smaller than δ max1. The peeling force of the surface of the first peeling film that is in contact with the temporary fixing resin layer is smaller than the peeling force of the surface of the second peeling film that is in contact with the temporary fixing resin layer.

[0014] Effects of Invention

[0015] According to one aspect of the present application, in the case where a semiconductor device is manufactured by a method including separating a semiconductor component from a temporary fixing resin layer by light irradiation, generation of resin residue on the semiconductor component accompanying the separation can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a process chart showing an example of a method of manufacturing a semiconductor device.

[0017] Figure 2 is a process chart showing an example of a method of manufacturing a semiconductor device.

[0018] Figure 3 is a process chart showing an example of a method of manufacturing a semiconductor device.

[0019] Figure 4 is a process chart showing an example of a method of manufacturing a semiconductor device.

[0020] Figure 5 is a schematic diagram showing a method of rigid body pendulum measurement.

[0021] Figure 6 is a process chart showing an embodiment of a method of manufacturing a temporary fixing film material.

[0022] Figure 7 is a graph showing the relationship between the logarithmic decrement and the temperature in the rigid body pendulum measurement.

[0023] Figure 8 is an optical microscope photograph of a semiconductor chip separated from a temporary fixing resin layer.

[0024] Figure 9 is an optical microscope photograph of a semiconductor chip separated from a temporary fixing resin layer. DETAILED DESCRIPTION

[0025] The present application is not limited to the following examples.

[0026] Figure 1 , Figure 2 and Figure 3 is a process chart showing an example of a method of manufacturing a semiconductor device. Figures 1-3The illustrated method includes, in order: a step of forming a temporary fixing stacked body 15 having a support substrate 21 having a support surface 21S1 and a back surface 21S2 on the opposite side thereof, a light absorbing layer 22, and a temporary fixing resin layer 10 having a first main surface 10S1 and a second main surface 10S2 on the opposite side thereof, and in which the light absorbing layer 22 and the temporary fixing resin layer 10 are sequentially stacked on the support surface 21S1; a step of temporarily fixing a semiconductor component 3 on the temporary fixing resin layer 10; a step of irradiating the temporary fixing stacked body 15 with light hν from the back surface 21S2 side; and a step of separating the semiconductor component 3 from the temporary fixing resin layer 10.

[0027] The temporary fixing stacked body 15 is formed using a temporary fixing film material 1 as illustrated in Figure 1 (a), which has the temporary fixing resin layer 10, a first peeling film 11, and a second peeling film 12. The first peeling film 11 and the second peeling film 12 each have a peeling surface 11S and a peeling surface 12S. The peeling force of the peeling surface 11S with respect to the temporary fixing resin layer 10 can be smaller than the peeling force of the peeling surface 12S with respect to the temporary fixing resin layer 10. In the temporary fixing film material 1, the first peeling film 11, the temporary fixing resin layer 10, and the second peeling film 12 are sequentially stacked in an orientation in which the peeling surface 11S of the first peeling film 11 is in contact with the first main surface 10S1 of the temporary fixing resin layer 10, and the peeling surface 12S of the second peeling film 12 is in contact with the second main surface 10S2 of the temporary fixing resin layer 10.

[0028] The temporary fixing stacked body 15 is formed by a method including a step of preparing the temporary fixing film material 1; a step of peeling the first peeling film 11 from the temporary fixing film material 1, as illustrated in Figure 1 (b), and then, a step of stacking the temporary fixing film material 1 on the light absorbing layer 22 provided on the support surface 21S1 in an orientation in which the exposed first main surface 10S1 of the temporary fixing resin layer 10 is in contact with the light absorbing layer 22, as illustrated in Figure 1 (c); and a step of peeling the second peeling film 12 from the temporary fixing film material 1 to expose the second main surface 10S2 of the temporary fixing resin layer 10, as illustrated in Figure 1 (d).

[0029] The support substrate 21 can be, for example, an inorganic glass substrate or a transparent resin substrate. The thickness of the support substrate 21 can be, for example, 0.1 to 2.0 mm.

[0030] A light absorbing layer 22 is formed on the support surface 21S1 of the support substrate 21 to prepare a light absorbing layer-equipped support member 2 having the support substrate 21 and the light absorbing layer 22.

[0031] A resin layer can be provided between the support substrate and the light absorbing layer. The resin layer can be a cured product of a curable resin layer.

[0032] One example of the light absorbing layer 22 is a conductive layer including a conductor that absorbs light and generates heat. As examples of the conductor that constitutes the conductive layer of the light absorbing layer 22, a metal, a metal oxide, and a conductive carbon material can be given. The metal can be an elemental metal such as chromium, copper, titanium, silver, platinum, gold, or the like, or an alloy such as nickel-chromium, stainless steel, copper-zinc, or the like. As examples of the metal oxide, indium tin oxide (ITO), zinc oxide, and niobium oxide can be given. These can be used alone or in combination with two or more. The conductor can be chromium, titanium, or a conductive carbon material.

[0033] The light absorbing layer 22 can be a metal layer formed of a single layer or multiple layers. The metal layer can have a transmittance of 3.1% or less with respect to incoherent light. For example, the light absorbing layer 22 can be a metal layer formed of a copper layer and a titanium layer. The metal layer of the light absorbing layer 22 can be a layer formed by physical vapor deposition (PVD) such as vacuum evaporation and sputtering, chemical vapor deposition (CVD) such as plasma chemical evaporation, or a plated layer formed by electrolytic plating or electroless plating. According to the physical vapor deposition, even if the support substrate 21 has a large area, the metal layer of the light absorbing layer 22 that covers the surface of the support substrate 21 can be efficiently formed.

[0034] In the case where the light absorbing layer 22 is a single-layer metal layer, the light absorbing layer 22 can include at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

[0035] The light absorbing layer 22 can be composed of two layers of a first layer and a second layer, and the first layer and the second layer can be stacked in this order from the support substrate 21 side. In this case, for example, when the first layer has high light absorbance and the second layer has a high coefficient of thermal expansion and a high elastic modulus, particularly good peelability can be obtained. From this viewpoint, for example, the first layer can include at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer can include at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). The first layer can include at least one metal selected from the group consisting of titanium (Ti), tungsten (W), and chromium (Cr), and the second layer can include at least one metal selected from the group consisting of copper (Cu) and aluminum (Al).

[0036] Another example of the light absorbing layer is a layer containing electrically conductive particles that absorb light to generate heat, and a binder resin in which the electrically conductive particles are dispersed. The electrically conductive particles can be particles containing the above-described electrically conductive body. For example, the light absorbing layer 22 can be a layer containing electrically conductive particles and a curable resin composition. The curable resin composition constituting the light absorbing layer can contain the same components as the curable resin composition constituting the curable resin layer of the portion other than the light absorbing layer. The curable resin composition constituting the light absorbing layer can be the same as or different from the curable resin composition constituting the curable resin layer of the portion other than the light absorbing layer. The content of the electrically conductive particles in the light absorbing layer can be 10 to 90 parts by mass relative to 100 parts by mass of the mass of the components other than the electrically conductive particles of the light absorbing layer, i.e., the binder resin or the curable resin composition. The greater the content of the electrically conductive particles, the more easily the light absorbing layer has a transmittance of 3.1% or less with respect to incoherent light. From the viewpoint of transmittance, the content of the electrically conductive particles can be 20% by mass or more or 30% by mass or more.

[0037] The light absorbing layer containing electrically conductive particles and a binder resin can be formed, for example, by a method including a step of applying a varnish containing electrically conductive particles, a binder resin, and an organic solvent on a support member or a resin layer, and a step of removing the organic solvent from the coated film. A light absorbing layer 22 prepared in advance can be laminated on the support substrate 21 or the resin layer.

[0038] From the viewpoint of easy peeling, the thickness of the light absorbing layer 22 can be 1 to 5000 nm or 100 to 3000 nm. When the thickness of the light absorbing layer 22 is 50 to 300 nm, the light absorbing layer 22 easily has a sufficiently low transmittance. When the light absorbing layer 22 is a metal layer formed of a single layer or multiple layers, from the viewpoint of good peeling, the thickness of the light absorbing layer 22 (or the metal layer) can be 75 nm or more, 90 nm or more, or 100 nm or more, or can be 1000 nm or less. Especially when the light absorbing layer 22 is a single-layer metal layer, from the viewpoint of good peeling, the thickness of the light absorbing layer 22 (or the metal layer) can be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, or can be 1000 nm or less. Even when the light absorbing layer 22 is a metal layer containing a metal (e.g., Cu, Ni) having a relatively low light absorbance or a metal (e.g., Ti) having a relatively low coefficient of thermal expansion, if the thickness thereof is large, there is a tendency to easily obtain better peeling.

[0039] After forming the temporary fixing laminate 15, a semiconductor component 3 is temporarily fixed on the temporary fixing resin layer 10. The semiconductor component 3 has a main body 31 and connection terminals 32 provided on the outer surface of the main body 31. Part or all of the connection terminals 32 may be embedded in the temporary fixing resin layer 10. The semiconductor component 3 may be a semiconductor wafer or a semiconductor chip component obtained by dicing a semiconductor wafer. The semiconductor component 3 may have a rewiring layer provided on the main body 31, and the semiconductor component 3 is temporarily fixed with the rewiring layer facing the temporary fixing resin layer 10. Two or more semiconductor components may be temporarily fixed on one temporary fixing laminate, and other driven components may be temporarily fixed together with the semiconductor components.

[0040] When the temporary fixing resin layer 10 is a layer containing a curable resin composition, the semiconductor component 3 is disposed on the temporary fixing resin layer 10, and then the temporary fixing resin layer 10 is heat-cured or photo-cured, thereby temporarily fixing the semiconductor component 3 to the cured temporary fixing resin layer 10. The heat curing conditions can be, for example, below 300°C or 100 to 200°C, for 1 to 180 minutes or 1 to 60 minutes.

[0041] The temporarily fixed semiconductor component 3 can be processed. Figure 2 (f) illustrates an example of a thinning process for the body portion 31 containing the semiconductor component. The processing of the semiconductor component is not limited to this, and may include, for example, thinning of the semiconductor component (body portion), dicing (cutting) of the semiconductor component, formation of through electrodes, etching process, plating reflow process, sputtering process, or combinations thereof.

[0042] The thinning of the main body 31 of the semiconductor component 3 is performed by grinding the surface of the main body 31 opposite to the temporary fixing resin layer 10 using a grinding machine or the like. The thickness of the thinned main body 31 can be, for example, 100 μm or less.

[0043] like Figure 3 As shown in (g), a sealing layer 4 for sealing the semiconductor component 3 can be formed on the temporary fixing resin layer 10, thereby forming a sealed structure 50 having the semiconductor component 3 and the sealing layer 4. When processing the temporarily fixed semiconductor component 3, the sealing layer 4 is usually formed after the semiconductor component 3 has been processed.

[0044] The sealing layer 4 can be formed using sealing materials commonly used in the manufacture of semiconductor devices. For example, the sealing layer 4 can be formed from a thermosetting resin composition. The thermosetting resin composition used to form the sealing layer 4 includes, for example, epoxy resins such as cresol phenolic varnish epoxy resin, phenolic varnish epoxy resin, biphenyl diepoxide epoxy resin, and naphthol phenolic varnish epoxy resin. The sealing layer 4 and the thermosetting resin composition used to form the sealing layer 4 may contain additives such as fillers and / or flame retardants.

[0045] The sealing layer 4 can be formed using, for example, solid materials, liquid materials, fine-grained materials, or sealing films. When using a sealing film, a compression sealing molding machine, a vacuum lamination apparatus, or the like can be used. For example, using these apparatuses, the semiconductor component 3 can be coated with a sealing film that has been thermally melted at 40–180°C (or 60–150°C), 0.1–10 MPa (or 0.5–8 MPa), and for 0.5–10 minutes, thereby forming the sealing layer 4. The thickness of the sealing film can be 50–2000 μm, 70–1500 μm, or 100–1000 μm. After forming the sealing layer 4, the sealing structure 50 can be divided into multiple parts containing the semiconductor component 3.

[0046] like Figure 3 As shown in (h), light hν is irradiated onto the temporary fixing laminate 15 from the back side 21S2, and then the semiconductor component 3 is separated from the temporary fixing resin layer 10. If a sealing structure 50 is formed on the temporary fixing resin layer 10, the sealing structure 50 is separated from the temporary fixing resin layer 10. Figure 4 As shown, the semiconductor component 3 (or sealing structure 50) can be separated from the temporary fixing resin layer 10 by the following method, which sequentially includes: irradiating the temporary fixing laminate 15 with light from the back side 21S2 side, thereby separating the temporary fixing resin layer 10 from the light absorption layer 22; and peeling the temporary fixing resin layer 10 from the semiconductor component 3 (or sealing structure 50).

[0047] When irradiated by light hν, the light-absorbing layer 22 absorbs the light and instantly generates heat. This heat can cause, for example, melting of the temporary fixing resin layer 10, thermal stress between the temporary fixing laminate 15 and the semiconductor component 3 (or sealing structure 50), and scattering of the light-absorbing layer 22. One or more of these phenomena become the primary causes, allowing the semiconductor component 3 (or sealing structure 50) to easily separate from the temporary fixing resin layer 10 via the separation of the light-absorbing layer 22 from the temporary fixing resin layer 10. To separate the semiconductor component 3 (or sealing structure 50) from the temporary fixing resin layer 10, stress can be applied to the semiconductor component 3 (or sealing structure 50) during or after irradiation with light hν.

[0048] The light hν can be, for example, laser light or incoherent light. Incoherent light is light that is not coherent, and is electromagnetic waves having a property of not producing interference fringes, low interferability, and low directivity. Incoherent light has a tendency to be attenuated as the optical path length is longer. Laser light is generally coherent light, in contrast to sunlight, light of a fluorescent lamp, and the like. Incoherent light can also be referred to as light other than laser light. Incoherent light generally has a larger irradiation area than coherent light (i.e., laser light), and thus the number of irradiations can be reduced. For example, separation of a plurality of semiconductor components 3 can be performed by one irradiation. From these viewpoints, incoherent light can be used.

[0049] The incoherent light can include infrared rays. The incoherent light can be pulsed light. The light source of the incoherent light is not particularly limited, but can be a xenon lamp. The xenon lamp is a lamp that uses light emitted by application / discharge in a light-emitting tube filled with xenon gas.

[0050] The irradiation conditions of the xenon lamp include an applied voltage, a pulse width, an irradiation time, an irradiation distance (a distance from the light source to the temporary fixing resin layer), and an irradiation energy, and the like. These can be arbitrarily set according to the number of irradiations, and the like. From the viewpoint of reducing damage to the semiconductor component 3, the irradiation conditions can be set such that the semiconductor component 3 (or the sealed structure 50) can be separated by one irradiation.

[0051] Sometimes, a resin residue that is a part of the temporary fixing resin layer 10 remains on the semiconductor component 3 that has been separated from the temporary fixing resin layer 10. In the first main surface 10S1 and the second main surface 10S2 of the temporary fixing resin layer 10, the surface in contact with the semiconductor component 3 is selected according to the logarithmic decay rate in the rigid body pendulum measurement, and thus generation of the resin residue can be suppressed. Specifically, when the maximum value of the logarithmic decay rate in the rigid body pendulum measurement of the first main surface 10S1 is δ max 1 and the maximum value of the logarithmic decay rate in the rigid body pendulum measurement of the second main surface 10S2 is δ max 2, δ max 2 is smaller than δ max 1. The maximum value of the logarithmic decay rate δ max is a value that reflects the degree of adhesion of the surface of the temporary fixing resin layer 10, and δ max A small surface can be said to be a surface having relatively small adhesion. By arranging the temporary fixing resin layer 10 such that the second main surface 10S2, which is a surface having small adhesion, i.e., a surface indicating a smaller δ max , is in contact with the semiconductor component 3, generation of the resin residue can be relatively reduced compared to a case where the first main surface 10S1, which is a surface indicating a larger δ max , is in contact with the semiconductor component 3. The second main surface 10S2, which is in contact with the semiconductor component 3, indicates a smaller δ max2may be 0.7 or less or 0.6 or less, or 0.2 or more.

[0052] Here, the maximum value of the logarithmic decrement in the rigid body pendulum measurement can be measured under the condition of increasing the temperature from 25°C to 150°C at a temperature increase rate of 5°C / minute. Figure 5 is a schematic diagram showing a method of the rigid body pendulum measurement. Figure 5 In the method shown, a temperature-variable workbench 6, and a pendulum bob 7 having a frame 71 (product code: AX-FRB-100) and a cylindrical edge 72 fixed to one end of the frame 71 (product code: RBP040) are used. A hammer and a vibration displacement detector are installed at the other end of the frame 71. A temporary fixing resin layer 10 serving as a test piece is fixed on the workbench 6, and the edge 72 is placed on the first main surface 10S1 or the second main surface 10S2 of the temporary fixing resin layer 10. In this state, the logarithmic decrement is found from the change in the vibration period when the pendulum bob is vibrated with the edge 72 as a fulcrum. By performing the measurement while increasing the temperature of the workbench 6, a curve showing the relationship between the logarithmic decrement and the temperature can be obtained, and the maximum value δ max of the logarithmic decrement can be found from the curve. The δ max The relatively small main surface is selected as the surface in contact with the semiconductor component.

[0053] Figure 6 is a process diagram showing an example of a method of manufacturing the temporary fixing film material 1. Figure 6 The method shown includes the following steps: a step of forming a temporary fixing resin layer 10 having a first main surface 10S1 in contact with the first peeling film 11 and a second main surface 10S2 on the opposite side thereof on the first peeling film 11 by applying a resin varnish containing a solvent on a peeling surface 11S of the first peeling film 11 to form a film of the resin varnish, and then removing the solvent from the film; and a step of attaching the second peeling film 12 to the second main surface 10S2 of the temporary fixing resin layer 10.

[0054] In the case where the temporary fixing resin layer 10 is formed by the method including the application of the resin varnish, generally, the maximum value δ max 1of the logarithmic decrement shown by the first main surface 10S1 in contact with the first peeling film 11 to which the resin varnish is applied is larger than the δ max 2of the second main surface 10S2 in contact with the second peeling film 12 attached to the temporary fixing resin layer 10 formed.

[0055] Therefore, by using the surface of the second peeling film 12 side, which is laminated with the protective film as the temporary fixing resin layer 10, as the surface for temporarily fixing the semiconductor component 3, it is possible to reduce the resin residue. Generally, since the protective film is peeled first when using a film material, an easily peelable film having a relatively small peeling force than the base film coated with a resin varnish is used. However, by selecting the first peeling film 11 and the second peeling film 12 in such a manner that the peeling force of the peeling surface 11S of the first peeling film 11, which is in contact with the temporary fixing resin layer 10, becomes smaller than the peeling force of the peeling surface 12S of the second peeling film 12 (protective film), which is in contact with the temporary fixing resin layer 10, it is possible to easily apply the temporary fixing film material 1 in the above-described method including the process of first peeling the first peeling film 11 from one side of the temporary fixing film material 1 while leaving the second peeling film 12.

[0056] Generally, a peeling film can use a film classified according to the degree of peelability as a commercially available product. For example, a light peelability peeling film is used as the first peeling film 11, and a heavy peelability peeling film can be used as the second peeling film. For example, a resin film such as polyethylene terephthalate, that is, a film having a peeling surface subjected to a release treatment in such a manner that it has various peeling forces, can be used commercially.

[0057] The temporary fixing resin layer 10 can be a layer containing a curable resin composition that is cured by heat or light. The temporary fixing resin layer 10 before curing has an adhesive property to the extent that it can be attached by pressure bonding the semiconductor component 3 or the like. The cured temporary fixing resin layer 10 holds the semiconductor component 3 during the necessary period such as during processing of the semiconductor component 3.

[0058] From the viewpoint of stress relaxation, the thickness of the temporary fixing resin layer 10 can be, for example, 50 μm or less, 40 μm or less, or 30 μm or less and 0.1 μm or more, or 50 μm or less, 40 μm or less, or 30 μm or less and 1 μm or more.

[0059] The storage modulus of the cured temporary fixing resin layer 10 at 25°C can be 5 to 100 MPa. When the storage modulus of the cured temporary fixing resin layer 10 at 25°C is 5 MPa or more, the support substrate 21 is easily kept without being bent, and there is a tendency to further reduce the resin residue. When the storage modulus of the cured temporary fixing resin layer 10 at 25°C is 100 MPa or less, there is a tendency to be able to reduce the positional displacement of the semiconductor component 3. From the same viewpoint, the storage modulus of the cured temporary fixing resin layer 10 at 25°C can be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 100 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 90 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 80 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 70 MPa or less, or 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 65 MPa or less. In the present specification, the storage modulus of the cured temporary fixing resin layer 10 refers to a value obtained by viscoelasticity measurement under conditions of a temperature increase rate of 5°C / min, a frequency of 1 Hz, and a tensile mode.

[0060] The storage modulus of the cured temporary fixing resin layer 10 at 25°C can be increased, for example, by increasing the content of the hydrocarbon resin described later, applying a hydrocarbon resin having a high Tg, and adding an insulating filler to the curable resin composition.

[0061] The storage modulus of the cured temporary fixing resin layer 10 at 250°C can be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.90 MPa or less, 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.80 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.75 MPa or less.

[0062] The curable resin composition constituting the temporary fixing resin layer 10 can contain a thermosetting resin and a hydrocarbon resin. The hydrocarbon resin is a resin in which the main skeleton is composed of a hydrocarbon. When the curable resin composition contains a hydrocarbon resin, the semiconductor component 3 is easily attached to the temporary fixing resin layer 10 at a low temperature.

[0063] The glass transition temperature (Tg) of the hydrocarbon resin can be 50°C or lower from the viewpoint of the low-temperature adhesiveness of the temporary fixing resin layer 10. The Tg of the hydrocarbon resin can be -100°C or higher or -50°C or higher from the viewpoint of the good peelability of the temporary fixing resin layer 10.

[0064] The Tg of the hydrocarbon resin is a midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the hydrocarbon resin is a midpoint glass transition temperature calculated by a method based on JIS K 7121, by measuring the heat change at a temperature raising rate of 10°C / minute and a measurement temperature of -80 to 80°C.

[0065] The hydrocarbon resin contains, for example, at least one selected from the group consisting of ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer elastomer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-non-conjugated diene copolymer, ethylene-1-butene-non-conjugated diene copolymer, ethylene-propylene-1-butene-non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), and hydrogenated products thereof. These hydrocarbon resins can have carboxyl groups. The carboxyl groups are introduced, for example, by modification using maleic anhydride or the like. The hydrocarbon resin can contain a styrene-based resin containing a monomer unit derived from a styrene-based monomer. The styrene-based resin can be styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0066] The weight average molecular weight (Mw) of the hydrocarbon resin can be 100,000 to 5 million or 1 million to 2 million. When the weight average molecular weight is 100,000 or more, there is a tendency to easily ensure the heat resistance of the temporary fixing resin layer. When the weight average molecular weight is 5 million or less, there is a tendency to easily suppress the decrease in the flowability and the decrease in the adhesiveness of the temporary fixing resin layer. Here, the weight average molecular weight is a polystyrene conversion value using gel permeation chromatography (GPC) and using a calibration curve based on standard polystyrene.

[0067] The content of the hydrocarbon resin can be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 90 parts by mass or less, 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 85 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 80 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10. When the content of the hydrocarbon resin is within these numerical ranges, there is a tendency to easily form a thin and flat temporary fixing resin layer 10. Also, there is a tendency for the temporary fixing resin layer 10 to easily have good adhesion at low temperatures and an appropriate storage modulus after curing. Here, the "total mass of the curable resin composition" refers to the total mass of the components excluding the solvent described later.

[0068] The thermosetting resin is a component that cures the curable resin composition through a thermal curing reaction. The thermal curing reaction can be a reaction of the thermosetting resin with a curing agent, self-polymerization of the thermosetting resin, or a combination thereof. As examples of the thermosetting resin, epoxy resins, acrylic resins, silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins can be given. These can be used alone or in combination with two or more. The thermosetting resin can include an epoxy resin because it is more excellent in heat resistance, workability, and reliability.

[0069] The epoxy resin is a compound having one or more epoxy groups. The epoxy resin can have two or more epoxy groups. As examples of the epoxy resin having two or more epoxy groups, bisphenol A-type epoxy resins, novolak-type epoxy resins (phenol novolak-type epoxy resins and the like), glycidyl amine-type epoxy resins, heterocycle-containing epoxy resins, and alicyclic epoxy resins can be given.

[0070] The curable resin composition can include a thermosetting resin and a curing agent thereof. The content of the total of the thermosetting resin and the curing agent thereof can be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less, 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition. When the content of the total of the thermosetting resin and the curing agent thereof is within these ranges, there is a tendency to easily form a thin and flat temporary fixing resin layer, and there is a tendency for the cured temporary fixing resin layer 10 to be more excellent in heat resistance.

[0071] In the case where an epoxy resin is used as the thermosetting resin, the curable resin composition can contain an epoxy resin curing agent. The epoxy resin curing agent is not particularly limited, and as examples thereof, amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), and phenol-formaldehyde resins (phenol novolak resins, bisphenol A novolak resins, cresol novolak resins, phenol aralkyl resins, etc.) can be given.

[0072] The thermosetting resin composition can further contain a curing accelerator that promotes the curing reaction of the thermosetting resin such as an epoxy resin. As examples of the curing accelerator, imidazole compounds, dicyandiamide, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undec-7-tetraphenylborate can be given. They can be used alone or in combination with two or more.

[0073] The content of the curing accelerator can be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. When the content of the curing accelerator is in this range, there is a tendency that the curability of the temporary fixing resin layer and the heat resistance after curing are more excellent.

[0074] The curable resin composition that constitutes the temporary fixing resin layer 10 can contain a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case, the curable resin composition can further contain the above-described hydrocarbon resin.

[0075] The polymerizable monomer is a compound having a polymerizable unsaturated group such as a vinyl unsaturated group. The polymerizable monomer can be any one of 1 functional, 2 functional, or 3 functional or more, but from the viewpoint of obtaining sufficient curability, a polymerizable monomer of 2 functional or more can be used. As examples of the polymerizable monomer, (meth)acrylate, a vinyl halide, a vinyl ether, a vinyl ester, a vinyl pyridine, a vinyl amide, and a vinyl aryl can be given. The polymerizable monomer can be a (meth)acrylate or a (meth)acrylic acid. The (meth)acrylate can be a monofunctional (meth)acrylate, a difunctional (meth)acrylate, a polyfunctional (meth)acrylate of 3 functional or more, or a combination thereof.

[0076] As examples of the monofunctional (meth)acrylate, there are mentioned methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, t-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, mono(2-(meth)acryloyloxyethyl) succinate, and the like aliphatic (meth)acrylates; and benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate, and the like aromatic (meth)acrylates.

[0077] As examples of the 2-functional (meth)acrylate, there are mentioned aliphatic (meth)acrylates such as ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; and aromatic (meth)acrylates such as ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene-type di(meth)acrylate, propoxylated fluorene-type di(meth)acrylate, and ethoxylated propoxylated fluorene-type di(meth)acrylate.

[0078] As examples of the 3-functional or higher polyfunctional (meth)acrylate, there are mentioned trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aliphatic (meth)acrylates such as phenol novolac-type epoxy (meth)acrylate, and cresol novolac-type epoxy (meth)acrylate; and aromatic epoxy (meth)acrylates.

[0079] These (meth)acrylates can be used alone or in combination of two or more. They can also be combined with other polymerizable monomers.

[0080] The content of polymerizable monomers may be 10 to 60 parts by mass relative to 100 parts by mass of the curable resin composition constituting the temporary fixing resin layer 10.

[0081] A polymerization initiator is a compound that initiates the polymerization reaction of polymerizable monomers by means of heating or irradiation with ultraviolet light. For example, when the polymerizable monomer is a compound having an ethylene unsaturated group, the polymerization initiator can be a thermal free radical polymerization initiator, a photofree radical polymerization initiator, or a combination thereof.

[0082] Examples of thermal free radical polymerization initiators include diacyl peroxides such as octanoyl peroxide, lauryl peroxide, octadecyl peroxide, and benzoyl peroxide; tert-butyl peroxypentanoate, tert-hexyl peroxypentanoate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanol peroxide)hexane, tert-hexyl peroxy-2-ethylhexanoate, tert-butyl peroxy-2-ethylhexanoate, tert-butyl peroxy-2-ethylhexanoate, tert-butyl peroxyisobutyrate, and tert-hexyl peroxyisopropyl monocarbonate. Peroxide esters, tert-butylperoxy-3,5,5-trimethylhexanoate, tert-butylperoxylaurate, tert-butyl peroxyisopropyl monocarbonate, tert-butylperoxy-2-ethylhexyl carbonate, tert-butyl peroxybenzoate, tert-hexyl peroxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, tert-butyl peracetate, and other peroxide esters; as well as azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylpentanonitrile), and 2,2'-azobis(4-methoxy-2'-dimethylpentanonitrile).

[0083] Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0084] These thermal free radical polymerization initiators and photofree radical polymerization initiators can be used alone or in combination of two or more.

[0085] The content of the polymerization initiator can be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the polymerizable monomers.

[0086] The curable resin composition constituting the temporary fixing resin layer 10 can further contain an insulating filler, a sensitizer, an antioxidant, and the like as other components.

[0087] An insulating filler is added with the aim of imparting low thermal expansion and low moisture absorption to the curable resin composition. As examples of the insulating filler, non-metallic inorganic fillers such as silicon dioxide, aluminum oxide, boron nitride, titanium dioxide, glass, and ceramic can be given. These insulating fillers can be used singly or in combination with two or more kinds.

[0088] The content of the insulating filler can be 5 to 20 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10. When the content of the insulating filler is within this numerical range, the cured temporary fixing resin layer 10 tends to have excellent heat resistance and good release properties.

[0089] As examples of the sensitizer, anthracene, phenanthrene, benzopyrene, fluoranthene, rubrene, pyrene, xanthene, indanthrone, thioxanthone-9-ketone, 2-isopropyl-9H-thioxanthone-9-ketone, 4-isopropyl-9H-thioxanthone-9-ketone, and 1-chloro-4-propoxythioxanthone can be given. The content of the sensitizer can be 0.01 to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10.

[0090] As examples of the antioxidant, quinone derivatives such as benzoquinone and hydroquinone, phenolic derivatives such as 4-methoxyphenol and 4-tert-butylcatechol, aminooxy derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate can be given. The content of the antioxidant can be 0.1 to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10.

[0091] The resin varnish for forming the temporary fixing resin layer 10 contains each component of the above exemplified curable resin composition and a solvent. The solvent can be a mixed solvent containing two or more kinds of solvents. The second main surface 10S2 of the temporary fixing resin layer 10 formed by removing the solvent from the resin varnish containing two or more kinds of solvents different in boiling point has a tendency to easily have lower adhesion. As examples of the solvent, aromatic solvents such as toluene, xylene, and limonene, and cyclohexanone can be given. The mixed solvent can contain, for example, an aromatic solvent and cyclohexanone. The concentration of the component other than the solvent in the resin varnish can be, for example, 10 to 30% by mass based on the mass of the resin varnish.

[0092] Examples

[0093] Hereinafter, the present application will be described more specifically by citing examples. However, the present application is not limited to these examples.

[0094] 1. Temporary fixing film material

[0095] The following release films used as a base film or a protective film were prepared.

[0096] • PUREX A31B (product name): light release type, polyethylene terephthalate (PET) film, TOYOBO FILM SOLUTIONS LIMITED, thickness: 38 μm

[0097] • PUREX A70J (product name): heavy release type, PET film, TOYOBO FILM SOLUTIONS LIMITED, thickness: 38 μm

[0098] A resin varnish was prepared which contained 35 parts by mass of a maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1924GT, Kraton Corporation., styrene content 13 mass%), 35 parts by mass of a maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, Kraton Corporation., styrene content 13 mass%), 15 parts by mass of a dicyclopentadiene-type epoxy resin (product name: HP7200, DIC Corporation), 15 parts by mass of a naphthalene-type epoxy resin (product name: HP4710, DIC Corporation), 0.8 parts by mass of a phenol-based antioxidant (product name: AO-60, ADEKA CORPORATION), and 2 parts by mass of 1-cyanoethyl-2-phenylimidazole (product name: 2PZ-CN, SHIKOKU CHEMICALS CORPORATION.), and toluene and cyclohexanone as solvents. The mass ratio of toluene to cyclohexanone was 1.0:2.6.

[0099] A precision coater was used to coat the obtained resin varnish on the release surface of a base film (PUREX A31B), and a temporary fixing resin layer having a thickness of 80 μm was produced by heating at 90°C for 5 minutes and then heating at 100°C for 5 minutes to remove the solvent from the coated film. A protective film (PUREX A70J) was attached to the surface of the temporary fixing resin layer on the side opposite to the base film with the release surface of the protective film in contact with the temporary fixing resin layer. Thus, a temporary fixing film material composed of the base film (first release film), the temporary fixing resin layer, and the protective film (second release film) was obtained.

[0100] The base film could be peeled off while leaving the temporary fixing resin layer on the side of the protective film immediately after the temporary fixing film material was produced (initially). The base film could also be peeled off in the same manner after the temporary fixing film material was stored in a refrigerator for 1 week. On the other hand, in the case of a temporary fixing film material produced in the same manner as described above except that the protective film was changed to a light release type A31B, the base film could not be peeled off while leaving the temporary fixing resin layer on the side of the protective film after production.

[0101] 2. Rigid pendulum test

[0102] The main surface 10S1 on the side of the base film (PUREX A31B) and the main surface 10S2 on the side of the protective film (PUREX A70J) of the temporary fixing resin layer were evaluated by a rigid pendulum tester (RPT-3000W (product name), A&D company) under the following conditions.

[0103] Temperature range: 25 to 150°C

[0104] Ramp rate: 5°C / min

[0105] Edge: RBP-040 (cylindrical)

[0106] The results of the measurement are shown in Figure 7 . Figure 7 is a graph showing the relationship between the logarithmic decay rate and the temperature. The maximum value of the logarithmic decay rate shown by the main surface 10S2 on the side of the protective film (2nd release film) is smaller than the maximum value of the logarithmic decay rate shown by the main surface 10S2 on the side of the base film (1st release film). The maximum value of the logarithmic decay rate is 0.94 on the main surface 10S1 on the side of the base film (1st release film) and 0.53 on the main surface 10S2 on the side of the protective film (2nd release film).

[0107] 3. Evaluation

[0108] Test 1

[0109] A support member with a metal layer was prepared, which had a glass substrate and a metal layer (a laminate of a Ti layer (thickness 50 nm) / copper layer (200 nm)) formed on the glass substrate by a sputtering method. The base film or the protective film was released from the temporary fixing film material, and the temporary fixing film material was laminated on the metal layer in the orientation in which the exposed main surface 10S1 or 10S2 of the temporary fixing resin layer was in contact with the metal layer. Then, the base film or the protective film remaining on the temporary fixing resin layer was released.

[0110] By placing a semiconductor chip having a bump as a connection terminal on the exposed main surface 10S1 or 10S2 of the temporary fixing resin layer and thermally curing the temporary fixing resin layer in this state, the semiconductor chip was temporarily fixed with the bump embedded in the temporary fixing resin layer. A sealing layer sealing the semiconductor chip was formed using a sealing agent, and a sealed structure with the temporary fixing resin layer was formed on the support member with a metal layer.

[0111] The temporary fixing resin layer and the sealed structure were released from the support member by irradiation from the glass substrate side with a xenon lamp under irradiation conditions of an applied voltage of 3800 V, a pulse width of 300 μs, an irradiation distance of 50 mm, an irradiation number of 1 time, and an irradiation time of 200 μs. Then, the sealed structure was released from the temporary fixing resin layer by applying a tensile stress to the temporary fixing resin layer to release the temporary fixing resin layer from the sealed structure. The irradiation distance is the distance between the light source and the stage on which the glass slide is disposed. After the release, the face on the side of the bump of the exposed semiconductor chip was observed using an optical microscope or a scanning electron microscope. Figure 8 is an optical microscope photograph of the semiconductor chip, Figure 9are scanning electron microscope photographs. In Figure 8 and Figure 9 In (a), a photograph is of a case where the semiconductor chip is temporarily fixed on the main surface 10S1 of the base film (1st release film) side of the temporary fixing resin layer, and in (b), a photograph is of a case where the semiconductor chip is temporarily fixed on the main surface 10S2 of the protective film (2nd release film) side of the temporary fixing resin layer. As shown in Figure 8 and Figure 9 (a), in a case where the main surface 10S2 of the protective film side of the temporary fixing resin layer is attached to the metal layer and the semiconductor chip is temporarily fixed on the main surface 10S1 of the base film side, a large amount of resin residue originating from the temporary fixing resin layer occurred. In Figure 9 the photograph of (a), the resin residue was observed, for example, in the portion surrounded by the dotted circle. On the other hand, as shown in Figure 8 and Figure 9 (b), in a case where the main surface 10S1 of the base film side of the temporary fixing resin layer is attached to the metal layer and the semiconductor chip is temporarily fixed on the main surface 10S2 of the protective film side, the occurrence of the resin residue originating from the temporary fixing resin layer was not confirmed.

[0112] Test 2

[0113] The solvent was changed to a mixed solvent of toluene, limonene and cyclohexanone (CHN) or a mixed solvent of xylene and cyclohexanone (CHN), and the temporary fixing film material was produced in the same manner as in Test 1, and the presence or absence of the resin residue on the semiconductor chip was confirmed. In the case of the temporary fixing of the semiconductor chip on the main surface 10S2 of the protective film side with respect to any of the temporary fixing film materials, the occurrence of the resin residue was not confirmed. The viscosity of each temporary fixing resin layer at 100°C, the storage modulus of the temporary fixing resin layer after curing, and the release strength of the base film and the protective film were measured in the following procedures. The measurement results are shown in Table 1.

[0114] Viscosity

[0115] The viscosity of the temporary fixing resin layer was measured under the condition of a temperature increase rate of 10°C / minute, and the viscosity at 100°C was calculated.

[0116] Storage modulus

[0117] By cutting the temporary fixing resin layer into a prescribed size (20 mm in length (distance between the jaws) x 5.0 mm in width), and performing heat curing in a clean oven (manufactured by ESPEC Corp.) at 180°C for 2 hours, a test piece of the cured temporary fixing resin layer was obtained. The storage modulus at 25°C and 270°C was measured by viscoelasticity measurement under the following conditions. The results are shown in Table 1.

[0118] Apparatus name: Dynamic viscoelasticity measuring apparatus (manufactured by TA Instruments, RSA-G2)

[0119] Measurement temperature range: -70 to 300°C

[0120] Temperature increase rate: 5°C / min

[0121] Frequency: 1 Hz

[0122] Measurement mode: Tensile mode

[0123] Peeling strength

[0124] The peeling strength was evaluated by measuring the 90° peeling strength between the silicon mirror wafer and the temporary fixing resin layer. A silicon mirror wafer (6 inches) having a thickness of 625 μm was disposed on the stage of a vacuum laminator (manufactured by NPC Incorporated, LM-50X50-S), and a peeling film of the temporary fixing resin layer was peeled so that the main surface of the temporary fixing film was disposed in contact with the silicon mirror wafer. The sample was obtained by vacuum lamination under the conditions of a temperature of 120°C and a pressure of 0.1 MPa for 2 minutes at 1.5 kPa (15 mbar). The obtained sample was further heated at 200°C for 1 hour and cured. Then, a 10 mm wide measurement sample was cut from the sample. The measurement sample was subjected to a peeling test at a speed of 50 mm / min using a peeling tester with a peeling angle set to 90°, and the peeling strength was calculated from the test results. The measurement was performed on both the main surfaces 10S1 and 10S2. The results are shown in Table 1.

[0125] [Table 1]

[0126]

[0127] Explanation of symbols

[0128] 1 - temporary fixing film material, 3 - semiconductor component, 4 - sealing layer, 10 - temporary fixing resin layer, 10S1 - first main surface, 10S2 - second main surface, 11 - first peeling film, 11S, 12S - peeling surface, 12 - second peeling film, 15 - temporary fixing laminate, 21 - support substrate, 21S1 - support surface, 21S2 - back surface, 22 - light absorbing layer, 50 - sealing structure.

Claims

1. A method for manufacturing a semiconductor device, comprising the following steps in sequence: The process of forming a temporary fixing laminate includes a support substrate having a support surface and a back surface opposite thereto, a light-absorbing layer, and a temporary fixing resin layer having a first main surface and a second main surface opposite thereto, wherein the light-absorbing layer and the temporary fixing resin layer are sequentially stacked on the support surface. The process of temporarily fixing a semiconductor component on the temporary fixing resin layer; The process of irradiating the temporary fixing laminate with light from the back side; and The process of separating the semiconductor component from the temporary fixing resin layer. The temporary fixing laminate is formed by a method comprising the following steps in sequence: A process for preparing a temporary fixation membrane material, wherein the temporary fixation membrane material has a temporary fixation resin layer, a first release film, and a second release film, wherein the first release film is in contact with the first main surface of the temporary fixation resin layer, and the second release film is in contact with the second main surface of the temporary fixation resin layer, and the first release film, the temporary fixation resin layer, and the second release film are sequentially stacked in the same orientation. The process of peeling the first release film from the temporary fixing film material, and laminating the temporary fixing film material onto the light-absorbing layer disposed on the support surface with the exposed first main surface of the temporary fixing resin layer in contact with the light-absorbing layer; and The process of peeling the second release film off the temporary fixing film material to expose the second main surface of the temporary fixing resin layer. The maximum values ​​of the logarithmic decay rates of the first and second principal surfaces of the temporary fixing resin layer in the rigid pendulum measurement are δ, respectively. max 1 and δ max 2,δ max 2 is less than δ max 1.

2. The method according to claim 1, wherein, The semiconductor component is separated from the temporary fixing resin layer by means of the following steps: irradiating the temporary fixing laminate with light from the back side, thereby separating the temporary fixing resin layer from the light-absorbing layer; and peeling the temporary fixing resin layer off the semiconductor component.

3. The method according to claim 1 or 2, further comprising a step of processing the semiconductor component temporarily fixed to the temporary fixing resin layer.

4. The method according to claim 1 or 2, further comprising the step of forming a sealing layer on the temporary fixing resin layer to seal the semiconductor component, thereby forming a sealed structure having the semiconductor component and the sealing layer.

5. A method for manufacturing a membrane material for temporary fixation, comprising the following steps: The process involves forming a resin varnish containing a solvent onto a first release film to form a film of the resin varnish, followed by removing the solvent from the film, thereby forming a temporary fixing resin layer on the first release film having a first main surface in contact with the first release film and a second main surface opposite thereto; and The process of attaching the second release film to the second main surface of the temporary fixing resin layer. The peel force of the surface of the first release film in contact with the temporary fixing resin layer is less than the peel force of the surface of the second release film in contact with the temporary fixing resin layer.

6. The method according to claim 5, wherein, The solvent is a mixture of two or more solvents.

7. A temporary fixation membrane material comprising a temporary fixation resin layer having a first main surface and a second main surface opposite thereto, a first release film, and a second release film. The first release film, the temporary fixation resin layer, and the second release film are sequentially stacked with the first release film in contact with the first main surface of the temporary fixation resin layer, and the second release film in contact with the second main surface of the temporary fixation resin layer. The maximum values ​​of the logarithmic decay rates of the first and second principal surfaces of the temporary fixing resin layer in the rigid pendulum measurement are δ, respectively. max 1 and δ max 2,δ max 2 is less than δ max 1, The peel force of the surface of the first release film in contact with the temporary fixing resin layer is less than the peel force of the surface of the second release film in contact with the temporary fixing resin layer.

Images