Substrate processing apparatus and method

Abstract

A substrate processing apparatus capable of stably transferring various types of substrates is provided. The substrate processing apparatus includes a floating stage that transfers a substrate in a first direction and includes a first region and a second region arranged in a second direction different from the first direction; a plurality of rollers provided in the first region and used to transfer the substrate; a plurality of first vacuum holes provided in the first region and sucking air at a first pressure; and a plurality of second vacuum holes provided in the second region and sucking air at a second pressure different from the first pressure.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and method. BACKGROUND

[0002] When manufacturing a display device, various processes such as photoengraving, etching, ashing, ion implantation, thin film deposition, cleaning, etc. can be performed. Here, the photoengraving process includes a coating, an exposure, and a development process. A photosensitive film is formed on a substrate (i.e., the coating process), a circuit pattern is exposed on the substrate on which the photosensitive film is formed (i.e., the exposure process), and a selectively developed on an exposed region of the substrate (i.e., the development process). SUMMARY

[0003] PROBLEMS TO BE SOLVED BY THE INVENTION

[0004] In addition, when performing these processes, the substrate can be transferred by using a levitation stage to levitate the substrate. When various types of substrates (e.g., substrates having different thicknesses, substrates that have a warpage phenomenon due to a process of a previous step, etc.) are transferred using the levitation stage, transfer defects (e.g., substrate slippage, misalignment, etc.) often occur.

[0005] The present application relates to a substrate processing apparatus and method.

[0006] The present application relates to a substrate processing apparatus and method.

[0007] The technical problems of the present application are not limited to the above-mentioned technical problems, and other technical problems not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0008] SOLUTION TO PROBLEM

[0009] To solve the above-mentioned technical problems, one aspect of the substrate processing apparatus of the present application includes a levitation stage that transfers a substrate in a first direction and includes a first region and a second region arranged in a second direction different from the first direction, a plurality of rollers provided in the first region and configured to transfer the substrate, a plurality of first vacuum holes provided in the first region and configured to suck air at a first pressure, and a plurality of second vacuum holes provided in the second region and configured to suck air at a second pressure different from the first pressure.

[0010] To solve the above-mentioned technical problems, another aspect of the substrate processing apparatus of the present invention includes: a suspended worktable that conveys a substrate in a first direction and includes a plurality of first regions and a plurality of second regions arranged alternately along a second direction different from the first direction; a plurality of rollers disposed in the first regions and used for conveying the substrate; a plurality of first vacuum holes disposed in the first regions and used for drawing air at a first pressure; a plurality of first injection holes disposed in the first regions and used for injecting compressed air; a plurality of second vacuum holes disposed in the second regions and used for drawing air at a second pressure; a plurality of second injection holes disposed in the second regions and used for injecting compressed air; and a controller that controls the magnitude of the first pressure according to the thickness of the substrate and controls the magnitude of the second pressure according to the type of film formed on the substrate.

[0011] To solve the above-mentioned technical problems, one aspect of the substrate processing method of the present invention includes: providing a substrate processing apparatus, the substrate processing apparatus comprising: a suspended worktable including a first region and a second region arranged along the width direction of the suspended worktable; a plurality of rollers disposed in the first region and used for conveying the substrate; a plurality of first vacuum holes disposed in the first region and used to draw air at a first pressure; a plurality of second vacuum holes disposed in the second region and used to draw air at a second pressure; and a controller for controlling the first pressure and the second pressure; receiving a unique number of the substrate; introducing the substrate into the suspended worktable; obtaining information about the thickness of the substrate and the type of film formed on the substrate based on the unique number; and controlling the magnitude of the first pressure according to the thickness of the substrate and controlling the magnitude of the second pressure according to the type of film formed on the substrate.

[0012] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description

[0013] Figure 1 This is a perspective view of a substrate processing apparatus according to a first embodiment of the present invention.

[0014] Figure 2 It is used for explanation Figure 1 Plan view of the first and second regions.

[0015] Figure 3 It is along Figure 1 The cross-sectional view taken from line III-III.

[0016] Figure 4 It is shown in detail Figure 3 The diagram shows the first valve module.

[0017] Figure 5 It is shown in detail Figure 3 The diagram shows the second valve module.

[0018] Figure 6 and Figure 7 is a conceptual view for explaining a first operation of the substrate processing apparatus according to the first embodiment of the present application.

[0019] Figure 8 is a conceptual view for explaining a second operation of the substrate processing apparatus according to the first embodiment of the present application.

[0020] Figure 9 is a conceptual view for explaining a substrate processing apparatus according to the second embodiment of the present application.

[0021] Figure 10 is a conceptual view for explaining a substrate processing apparatus according to the third embodiment of the present application.

[0022] Figure 11 is a conceptual view for explaining a substrate processing apparatus according to the fourth embodiment of the present application.

[0023] Figure 12 is a flowchart for explaining a substrate processing method according to some embodiments of the present application. DETAILED DESCRIPTION

[0024] Hereinafter, preferred embodiments of the present application will be described in detail with reference to the accompanying drawings. Advantages and features of the present application and methods of achieving the advantages and features will become apparent from embodiments described below in detail in conjunction with the accompanying drawings. The present application, however, can be embodied in various different forms, and is not limited to embodiments disclosed herein, and the embodiments are provided merely for complete disclosure of the present application and full conveyance of the scope of the present application to those skilled in the art. In the entire specification, the same reference numerals refer to the same components throughout the specification.

[0025] Spatial relative terms, such as "below", "lower", "bottom", "above", "upper", and the like, can be used herein for ease of description to describe one element or component's relationship to another element(s) or component(s) as illustrated in the figures. Spatial relative terms can be interpreted differently depending on the direction of the figure. For example, if an element or component is turned over, then a bottom portion, which was initially below another element or component, can be positioned above the other element or component. Thus, the exemplary term "below" can include, above, below, and the like. The element or component can also be oriented in other directions, and the spatial relative terms can be interpreted accordingly.

[0026] Although terms such as "first," "second," etc., are used to describe various elements, constituent elements, and / or parts, it is clear that these elements, constituent elements, and / or parts are not limited by these terms. These terms are used only to distinguish one element, constituent element, or part from other elements, constituent elements, or parts. Therefore, within the technical concept of this invention, the first element, first constituent element, or first part mentioned below can obviously also be a second element, second constituent element, or second part.

[0027] In the following description, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, the same or corresponding constituent elements will be given the same reference numerals, regardless of the drawing numbers, and repeated descriptions thereof will be omitted.

[0028] Figure 1 This is a perspective view of a substrate processing apparatus according to a first embodiment of the present invention.

[0029] Reference Figure 1 According to a first embodiment of the present invention, the substrate processing apparatus includes a suspended worktable 1 extending in a first direction (e.g., the X direction).

[0030] The suspended worktable 1 includes: an inlet worktable 10 for introducing a substrate; a precision worktable 20 for performing process processing on the introduced substrate; and an outlet worktable 30 for removing the substrate that has completed the process processing.

[0031] Since the substrate processing is performed on the precision stage 20, precise control of the substrate's position is required. Therefore, the precision stage 20 can be equipped with air holes for injecting compressed air to suspend the substrate, and vacuum holes for drawing air to precisely position the substrate. The processing may include, but is not limited to, coating the substrate with a photosensitive film or an anti-reflective film.

[0032] As described below, the entry workbench 10 includes a plurality of first areas 11 and a plurality of second areas 12. The plurality of first areas 11 and the plurality of second areas 12 are arranged along a second direction (e.g., the Y direction) different from a first direction (e.g., the X direction). Furthermore, the plurality of first areas 11 and the plurality of second areas 12 can be arranged alternately. Although in Figure 1 The diagram shows two first regions 11 and three second regions 12, but is not limited to this. That is, there can be three or more first regions 11, and the second regions 12 can be arranged between adjacent first regions 11.

[0033] Figure 2 It is used for explanation Figure 1 Plan view of the first and second regions. Figure 3 It is along Figure 1 The cross-sectional view taken from line III-III. Figure 4is a view illustrating a first valve module in detail. Figure 3 is a view illustrating a second valve module in detail. Figure 5 is a view illustrating a first valve module in detail. Figure 3 is a view illustrating a second valve module in detail.

[0034] Referring to Figure 2 and Figure 3 , the plurality of first regions 11a, 11b and the plurality of second regions 12a, 12b, 12c are arranged along a second direction (for example, a Y direction). The plurality of first regions 11a, 11b and the plurality of second regions 12a, 12b, 12c can be arranged in the order of the second region 12b, the first region 11a, the second region 12a, the first region 11b, and the second region 12c in the second direction.

[0035] A plurality of through-holes 118, a plurality of first vacuum holes 131, a plurality of first ejection holes 141, a plurality of second vacuum holes 132, and a plurality of second ejection holes 142 are formed in the bottom plate 19.

[0036] A plurality of rollers 110 for transferring the substrate are arranged in the first regions 11a, 11b. The plurality of rollers 110 pass through the through-holes 118 along a third direction (i.e., along a Z direction) and are exposed to an upper surface of the bottom plate 19. The plurality of rollers 110 are connected to a driving shaft 120, and the driving shaft 120 is connected to a driving motor 121. Accordingly, the driving shaft 120 is rotated by a rotational force provided by the driving motor 121, thereby rotating the plurality of rollers 110.

[0037] In addition, the plurality of first ejection holes 141 and the plurality of first vacuum holes 131 are arranged in the first regions 11a, 11b.

[0038] A distance between the substrate and the bottom plate 19 is controlled by ejecting compressed air from the plurality of first ejection holes 141. In Figure 3 , the plurality of first ejection holes 141 and a valve module for controlling the plurality of first ejection holes 141 are not shown.

[0039] The plurality of first vacuum holes 131 are used to suck air at a first pressure. By sucking air at the first pressure, the substrate can be brought into contact with the rollers 110. Accordingly, the substrate G can be easily transferred in the first direction according to rotation of the rollers 110 (refer to Figure 8 ). In particular, the magnitude of the first pressure can be adjusted according to the thickness of the substrate.

[0040] More specifically, the first valve module 150 is provided to correspond to the plurality of first regions 11a, 11b. That is, the first valve module 150 is in fluid communication with the plurality of first vacuum holes 131 provided in the plurality of first regions 11a, 11b. The first valve module 150 can adjust the magnitude of the first pressure provided to the plurality of first vacuum holes 131 according to control of the controller 190.

[0041] For example, the memory 192 can store the magnitude of the first pressure corresponding to the thickness of the substrate. Accordingly, the controller 190 can calculate the magnitude of the corresponding first pressure in the memory 192 based on the thickness of the substrate. The controller 190 controls the first valve module 150 considering the calculated magnitude of the first pressure.

[0042] Here, referring to Figure 4 , the first valve module 150 includes a plurality of first valve units 151, 152 arranged side by side with each other. Although Figure 4 two first valve units 151, 152 are shown, it is not limited thereto.

[0043] For example, the first valve unit 151 includes a solenoid valve 1511 and a flow regulating valve 1512. For example, the first valve unit 152 includes a solenoid valve 1521 and a flow regulating valve 1522. The two flow regulating valves 1512, 1522 are pre-set to mutually different flow rates. That is, the on / off amounts of the two flow regulating valves 1512, 1522 can be pre-set to be different from each other. The two solenoid valves 1511, 1521 are turned on / off according to the control of the controller 190.

[0044] In this structure, when the thickness of the substrate is a first thickness, the controller 190 opens the solenoid valve 1511 to supply the first pressure of the first magnitude set by the flow regulating valve 1512 to the plurality of first vacuum holes 131.

[0045] Further, when the thickness of the substrate G is a second thickness, the controller 190 opens the solenoid valve 1521 to supply the first pressure of the second magnitude set by the flow regulating valve 1522 to the plurality of first vacuum holes 131.

[0046] Referring again to Figure 2 and Figure 3 , the plurality of second injection holes 142 and the plurality of second vacuum holes 132 are arranged in the second regions 12a, 12b, 12c.

[0047] The distance between the substrate and the bottom plate 19 is controlled by injecting compressed air from the plurality of second injection holes 142. In Figure 3 , the plurality of second injection holes 142 and a valve module for controlling the plurality of second injection holes 142 are not shown.

[0048] The plurality of second vacuum holes 132 are used to suck air at a second pressure. The second pressure can be controlled according to the type of the film formed on the substrate. This will be described later with reference to Figure 8 . The second pressure can be controlled differently from the first pressure independently of the first pressure.

[0049] Further, the magnitude of the second pressure provided to each of the plurality of second regions 12a, 12b, 12c can be different from each other. Specifically, the plurality of second valve modules 160a, 160b, 160c are provided to correspond to the plurality of second regions 12a, 12b, 12c, respectively. For example, the second valve module 160a is fluidly connected to the plurality of second vacuum holes 132 provided in the second region 12a, the second valve module 160b is fluidly connected to the plurality of second vacuum holes 132 provided in the second region 12b, and the second valve module 160c is fluidly connected to the plurality of second vacuum holes 132 provided in the second region 12c. The second valve modules 160a, 160b, 160c can adjust the magnitude of the second pressure according to the control of the controller 190.

[0050] For example, the memory 192 can store the magnitude of the second pressure corresponding to the type of the film formed on the substrate. Accordingly, the controller 190 can calculate the magnitude of the corresponding second pressure in the memory 192 based on the type of the film formed on the substrate. The controller 190 controls the second valve modules 160a, 160b, 160c considering the magnitude of the second pressure. For example, the second pressure provided through the second valve module 160a can have a third magnitude, and the second pressure provided through the second valve modules 160b and 160c can have a fourth magnitude greater than the third magnitude. Conversely, the second pressure provided through the second valve module 160a can have the fourth magnitude, and the second pressure provided through the second valve modules 160b and 160c can have the third magnitude less than the fourth magnitude.

[0051] Here, with reference to Figure 5 , the second valve module 160a includes a plurality of second valve units 161, 162 arranged side by side with each other. In Figure 5 , two second valve units 161, 162 are shown, but are not limited thereto.

[0052] For example, the second valve unit 161 includes a solenoid valve 1611 and a flow regulating valve 1612. For example, the second valve unit 162 includes a solenoid valve 1621 and a flow regulating valve 1622. The two flow regulating valves 1612, 1622 are pre-set to mutually different flows. That is, the switching amount of the two flow regulating valves 1612, 1622 can be pre-set to be different from each other. The two solenoid valves 1611, 1621 are turned on / off according to the control of the controller 190.

[0053] In this structure, when the type of the film formed on the substrate is a first type (for example, a non-metal film, an insulating film), the controller 190 opens the solenoid valve 1611 to provide the second pressure of the fourth magnitude set by the flow regulating valve 1612 to the plurality of second vacuum holes 132.

[0054] Further, when the type of the film formed on the substrate is the second type (for example, a metal film), the controller 190 opens the electromagnetic valve 1621 to supply the second pressure of the third size set by the flow rate adjusting valve 1622 to the plurality of second vacuum holes 132.

[0055] The second valve modules 160b, 160c have substantially the same structure as that of the first valve module 160a shown in FIG. 1. Figure 5

[0056] Figure 6 and Figure 7 is a view for explaining a first operation of a substrate processing apparatus according to a first embodiment of the present application.

[0057] First, referring to Figure 6 , it is assumed that the thickness of the substrate G1 is a first thickness t1.

[0058] The plurality of first spray holes 141 spray compressed air to float the substrate G1.

[0059] The plurality of first vacuum holes 131 suction air at a first pressure of a first size (see reference numeral 1311), to bring the substrate G1 into contact with the plurality of rollers 110 (see reference numeral 119).

[0060] If the plurality of first vacuum holes 131 is not present, a gap (for example, 100 to 200 μm) can be present between the substrate G0 and the plurality of rollers 110. Therefore, the rotational force of the rollers 110 can not be transmitted to the substrate G0.

[0061] On the other hand, in the present application, since the plurality of first vacuum holes 131 suctions air at the first pressure of the first size, the rotational force of the rollers 110 can be stably transmitted to the substrate G0.

[0062] On the other hand, when the plurality of first vacuum holes 131 suctions air at the first pressure of a second size larger than the first size, the substrate G1 is pulled too strongly in the direction toward the bottom plate 19, so that the substrate G1 is not easily moved.

[0063] Next, referring to Figure 7 , it is assumed that the thickness of the substrate G3 is a second thickness t2 larger than the first thickness t1.

[0064] The plurality of first vacuum holes 131 suction air at the first pressure of the second size larger than the first size (see reference numeral 1312), to bring the substrate G3 into contact with the plurality of rollers 110.

[0065] ​If the plurality of first vacuum holes 131 does not exist, a gap can exist between the substrate G2 and the plurality of rollers 110. Further, when the plurality of first vacuum holes 131 sucks air at the first pressure of the first size, not the second size, the substrate G2 can not be in contact with the rollers 110. That is, when the substrate G2 becomes thick, the plurality of first vacuum holes 131 must suck air at a greater pressure.

[0066] Referring to Figure 6 and Figure 7 It is known that the magnitude of the pressure provided via the first vacuum holes 131 can vary depending on the thicknesses of the substrates G1 and G3 (reference numerals 1311 and 1312). That is, when the thicknesses of the substrates G1 and G3 increase, the pressure provided via the first vacuum holes 131 increases. By such control, the substrate G can be stably conveyed with the rollers 110.

[0067] Figure 8 is a conceptual view for explaining a second operation of the substrate processing apparatus according to the first embodiment of the present application.

[0068] Referring to Figure 8 , a film F is formed on the substrate G. The warping direction of the substrate G can vary depending on the type of the film F.

[0069] For example, when a non-metallic film F1 is formed on the substrate G, the central region of the substrate G can be more warped upward than the edge regions. This is because the non-metallic film F1 exerts a compressive stress on the substrate.

[0070] In contrast, when a metallic film F2 is formed on the substrate G, the edge regions of the substrate G can be more warped upward than the central region. This is because the metallic film F2 exerts a tensile stress on the substrate.

[0071] Referring to Figure 3 and Figure 8 , the magnitude of the second pressure provided to each of the plurality of second regions 12a, 12b, 12c can be different from each other.

[0072] For example, if the type of the film formed on the substrate G is the non-metallic film F1, the magnitude of the second pressure provided in the second region 12a corresponding to the central region of the substrate G (i.e., the fourth magnitude) is greater than the magnitude of the second pressure provided in the second regions 12b, 12c corresponding to the edge regions of the substrate G (i.e., the third magnitude).

[0073] In this way, the plurality of second regions 12a, 12b, 12c pull the central region thereof more strongly than the edge regions of the substrate G.

[0074] For example, if the type of the film formed on the substrate G is a metal film F2, the magnitude of the second pressure (i.e., the fourth magnitude) provided in the second regions 12b, 12c corresponding to the edge regions of the substrate G is greater than the magnitude of the second pressure (i.e., the third magnitude) provided in the second region 12a corresponding to the central region of the substrate G.

[0075] In this way, the plurality of second regions 12a, 12b, 12c pull the edge regions of the substrate G more strongly than the central region of the substrate G.

[0076] In summary, in the substrate processing apparatus according to the first embodiment of the present application, the magnitude of the first pressure provided via the plurality of first vacuum holes 131 adjacent to the roller 110 is controlled differently depending on the thickness of the substrate G. Further, the magnitude of the second pressure provided via the plurality of second vacuum holes 132 is controlled differently depending on the type of the film formed on the substrate G. By this control, the suction force to the substrate G can be optimized. Therefore, the transfer defect of the substrate G on the levitation stage 1 can be minimized.

[0077] Figure 9 is a view for explaining a substrate processing apparatus according to a second embodiment of the present application. For ease of description, the description of the elements described with reference to Figures 1 to 8 will be omitted.

[0078] With reference to Figure 9 , the substrate processing apparatus according to the second embodiment of the present application includes a plurality of second valve modules 160a, 160b, 160c provided respectively corresponding to each of the plurality of second regions 12a, 12b, 12c and a third valve module 160d corresponding to the plurality of second valve modules 160a, 160b, 160c. That is, two levels of valve modules 160a to 160d are used to control the plurality of second vacuum holes 132 in the second regions 12a, 12b, 12c.

[0079] As described above, each of the plurality of second valve modules 160a, 160b, 160c can include a plurality of second valve units (refer to Figure 5 161 and 162) arranged side by side with each other. The switching amount of the plurality of second valve units (refer to Figure 5 161 and 162) can be set to be different from each other.

[0080] Although not shown separately, the third valve module 160d can also include a plurality of third valve units arranged side by side with each other, similarly to the configuration of the second valve modules 160a, 160b, 160c. The switching amount of the plurality of third valve units can be set to be different from each other.

[0081] As described above, when the valve modules 160a to 160d are configured in two stages, the pressure to be supplied to the second vacuum holes 132 of the second regions 12a, 12b, 12c can be controlled in a variety of ways. For example, if the second valve module 160a is set to select one of two switching amounts and the third valve module 160d is set to select one of two switching amounts, the pressure supplied to the second vacuum holes 132 of the second region 12a can be selected as one of four switching amounts (∑2 x 2 = 4).

[0082] The type of film formed on the substrate is very diverse. For example, the non-metal film (refer to Figure 8 F1) can also include oxides, nitrides, high-k materials, and the like. Depending on which non-metal film is formed on the substrate, the magnitude of the compressive stress will be different, and thus the degree of warping of the substrate will also be different. The metal film (refer to Figure 8 F2) can also include copper, aluminum, titanium, and the like. Depending on which metal film is formed on the substrate, the magnitude of the tensile stress will be different, and thus the degree of warping of the substrate will also be different. Therefore, it is necessary to supply three or more different pressures to the second vacuum holes 132 in the second regions 12a, 12b, 12c.

[0083] In the substrate processing apparatus according to the second embodiment of the present application, the valve modules 160a to 160d can be arranged in two or more stages to supply three or more different pressures to the second vacuum holes 132.

[0084] Figure 10 is a diagram for explaining a substrate processing apparatus according to a third embodiment of the present application. For ease of description, elements described with reference to Figures 1 to 8 will be omitted.

[0085] With reference to Figure 10 , in the substrate processing apparatus according to the third embodiment of the present application, a plurality of first regions 11a, 11b and a plurality of second regions 12a, 12b, 12c are arranged along a second direction (for example, the Y direction).

[0086] The first regions 11a, 11b are formed with a plurality of rollers 110 for conveying a substrate and a plurality of first vacuum holes 131 that suck air at a first pressure. The first regions 11a, 11b are not formed with a plurality of first ejection holes.

[0087] The second regions 12a, 12b, 12c are formed with a plurality of second vacuum holes 132 that suck air at a second pressure and a plurality of second ejection holes 142 for ejecting compressed air.

[0088] Figure 11 is a diagram for explaining a substrate processing apparatus according to a fourth embodiment of the present application.

[0089] Reference Figure 11 In the substrate processing apparatus according to the fourth embodiment of the present invention, the indexer 91, cleaning module 92, baking module 93, coating module 94, drying module 95, etc., can be arranged sequentially. The substrate can be sequentially conveyed to the above-mentioned modules 91 to 95 by a conveying member, and the corresponding process processing can be performed in each module 91 to 95.

[0090] When the substrate is introduced into the indexer 91, the indexer 91 identifies the substrate's unique number GID. The identified unique number GID is provided to the controller 190.

[0091] Next, the substrate is transferred to the cleaning module 92, where it is cleaned with a cleaning solution.

[0092] Then, the substrate is transferred to the baking module 93, where the cleaning solution remaining on the substrate is removed by baking.

[0093] Next, the substrate is conveyed to the coating module 94. The coating module 94 can be an air-float coating machine. The coating module 94 can utilize... Figures 1 to 10 At least one of the described substrate processing apparatuses.

[0094] Specifically, the substrate is introduced into the suspended worktable (see reference). Figure 1 (1) The controller 190 retrieves information about the thickness of the substrate and the type of film formed on the substrate from the memory 192 based on the unique number GID. The controller 190 can control the supply of material to the first region (based on the thickness of the substrate). Figure 3 The first vacuum hole in 11a, 11b) Figure 3 The magnitude of the first pressure (131). Furthermore, the controller 190 can control the amount of pressure supplied to the second region (131) based on the type of film formed on the substrate. Figure 3 The second vacuum hole in 12a, 12b, 12c) Figure 3 The magnitude of the second pressure (132).

[0095] Next, the substrate is transferred to the drying module 95. The film coated on the substrate is then dried.

[0096] Figure 12 This is a flowchart illustrating a substrate processing method according to some embodiments of the present invention. References will be omitted for ease of description. Figures 1 to 8 The described element.

[0097] Reference Figures 1 to 3 as well as Figure 12A substrate processing apparatus (S10) is provided. Specifically, the substrate processing apparatus includes: a floating stage 1 including first regions 11a, 11b and second regions 12a, 12b, 12c arranged in a width direction; a plurality of rollers 110 provided in the first regions 11a, 11b and configured to convey a substrate; a plurality of first vacuum holes 131 provided in the first regions 11a, 11b and configured to suck air at a first pressure; a plurality of second vacuum holes 132 provided in the second regions 12a, 12b, 12c and configured to suck air at a second pressure; and a controller 190 configured to control the first pressure and the second pressure.

[0098] Next, a unique number of the substrate (refer to the GID of the substrate 10 of FIG. 1) is received (S20). Specifically, the controller 190 receives the unique number GID of the substrate from the indexer (refer to 91 of FIG. 1). Figure 11 Figure 11

[0099] Next, the substrate is introduced into the floating stage 1 (S30).

[0100] Next, information about a thickness of the substrate and a type of a film formed on the substrate is acquired based on the unique number GID (S40). That is, the controller 190 acquires the information about the thickness of the substrate and the type of the film formed on the substrate from the memory 192 based on the unique number GID.

[0101] Next, the magnitude of the first pressure is controlled according to the thickness of the substrate, and the magnitude of the second pressure is controlled according to the type of the film formed on the substrate (S50). Specifically, the controller 190 can adjust the magnitude of the first pressure provided to the first vacuum holes 131 in the first regions 11a, 11b based on the thickness of the substrate. In addition, the controller 190 can control the magnitude of the second pressure provided to the second vacuum holes 132 in the second regions 12a, 12b, 12c based on the type of the film formed on the substrate.

[0102] The embodiments of the present application have been described above with reference to the accompanying drawings, but it will be understood by those skilled in the technical field to which the present application pertains that the present application can be implemented in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the above-described embodiments are exemplary in all aspects and are not restrictive.​​

Claims

1. A substrate processing apparatus, comprising: A suspended worktable that transports a substrate in a first direction and includes a first region and a second region arranged in a second direction different from the first direction; Multiple rollers are arranged in the first region and used to convey the substrate; Multiple first vacuum holes are disposed in the first region and draw air at a first pressure; as well as Multiple second vacuum holes are disposed in the second region and draw air at a second pressure different from the first pressure; The first region is configured as a plurality of regions, the second region is configured as a plurality of regions, and the plurality of first regions and the plurality of second regions are arranged alternately along the second direction.

2. The substrate processing apparatus according to claim 1, wherein, The first pressure is controlled differently depending on the thickness of the substrate.

3. The substrate processing apparatus according to claim 1, wherein, The second pressure is controlled according to the type of film formed on the substrate.

4. The substrate processing apparatus according to claim 1, further comprising: The first valve module is configured to correspond to multiple first regions. The first valve module includes multiple first valve units arranged side by side, and When the substrate has a first thickness, one of the plurality of first valve units is used, and when the substrate has a second thickness, another of the plurality of first valve units is used.

5. The substrate processing apparatus according to claim 1, further comprising: Multiple second valve modules are configured to correspond to multiple second regions, respectively. The second valve module includes multiple second valve units arranged side by side. At least two of the plurality of second valve units have different switching quantities from each other.

6. The substrate processing apparatus according to claim 5, further comprising: The third valve module is configured to correspond to the plurality of second valve modules, and The third valve module includes multiple third valve units arranged side by side.

7. The substrate processing apparatus according to claim 1, further comprising: Multiple first injection holes are disposed in the first region and are used to inject compressed air; as well as Multiple second injection holes are disposed in the second region and are used to inject compressed air.

8. The substrate processing apparatus according to claim 1, wherein, The suspended worktable includes: An entry workbench for introducing the substrate; and A precision stage is used to perform process treatments on the introduced substrate. The first area and the second area are located at the entrance workbench.

9. A substrate processing apparatus, comprising: A suspended worktable that transports substrates in a first direction and includes a plurality of first regions and a plurality of second regions arranged alternately along a second direction different from the first direction; Multiple rollers are arranged in the first region and used to convey the substrate; Multiple first vacuum holes are disposed in the first region and draw air at a first pressure; Multiple first injection holes are disposed in the first region and are used to inject compressed air; Multiple second vacuum holes are disposed in the second region and draw air at a second pressure different from the first pressure; Multiple second injection holes are disposed in the second region and used to inject compressed air; as well as The controller controls the magnitude of the first pressure based on the thickness of the substrate, and controls the magnitude of the second pressure based on the type of film formed on the substrate.

10. The substrate processing apparatus according to claim 9, further comprising: The first valve module is configured to correspond to the plurality of first regions. The first valve module includes multiple first valve units arranged side by side.

11. The substrate processing apparatus according to claim 9, further comprising: Multiple second valve modules are configured to correspond to the multiple second regions respectively; as well as The third valve module is configured to correspond to the plurality of second valve modules. The second valve module includes a plurality of second valve units arranged side by side, and the third valve module includes a plurality of third valve units arranged side by side.

12. The substrate processing apparatus according to claim 9, wherein, When the central region of the substrate warps upward more than the edge region, the multiple second vacuum holes in the second region corresponding to the central region draw in air at a greater pressure than the multiple second vacuum holes in the second region corresponding to the edge region.

13. The substrate processing apparatus according to claim 9, wherein, When the edge region of the substrate warps upward more than the central region, the multiple second vacuum holes in the second region corresponding to the edge region draw in air at a greater pressure than the multiple second vacuum holes in the second region corresponding to the central region.

14. The substrate processing apparatus according to claim 9, wherein, The suspended worktable includes: An entry workbench for introducing the substrate; and A precision stage is used to perform process treatments on the introduced substrate. The plurality of first areas and the plurality of second areas are located at the entrance workbench.

15. The substrate processing apparatus according to claim 9, wherein, The controller receives the unique number of the substrate from the indexer and reads the information of the substrate stored in association with the unique number in order to control the first pressure and the second pressure.

16. The substrate processing apparatus according to claim 9, wherein, The suspended worktable is installed inside the air flotation coating machine.

17. A substrate processing method, comprising: A substrate processing apparatus is provided, the substrate processing apparatus comprising: a suspended worktable including a first region and a second region arranged along the width direction of the suspended worktable; a plurality of rollers disposed in the first region and used for conveying substrates; a plurality of first vacuum holes disposed in the first region and used to draw air at a first pressure; a plurality of second vacuum holes disposed in the second region and used to draw air at a second pressure different from the first pressure; and a controller for controlling the first pressure and the second pressure; Receive the unique number of the substrate; The substrate is introduced into the suspended worktable; Based on the unique identifier, information regarding the thickness of the substrate and the type of film formed on the substrate is obtained; and The magnitude of the first pressure is controlled according to the thickness of the substrate, and the magnitude of the second pressure is controlled according to the type of film formed on the substrate; The first region is configured as a plurality of regions, the second region is configured as a plurality of regions, and the plurality of first regions and the plurality of second regions are arranged alternately along the width direction.

18. The substrate processing method according to claim 17, wherein, The substrate processing apparatus further includes a first valve module, which is configured to correspond to a plurality of the first regions. The first valve module includes a plurality of first valve units arranged side-by-side with each other. When the substrate has a first thickness, one of the plurality of first valve units is used, and when the substrate has a second thickness, another of the plurality of first valve units is used.

19. The substrate processing method according to claim 18, wherein, The substrate processing apparatus further includes a plurality of second valve modules, each configured to correspond to a plurality of second regions, wherein each second valve module includes a plurality of second valve units arranged side by side. The substrate processing apparatus further includes a third valve module, which is configured to correspond to the plurality of second valve modules, wherein the third valve module includes a plurality of third valve units arranged side by side with each other.

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