Construction method of process control model based on cutting area temperature field and crystal rod process control cutting method

Abstract

The present application discloses a method for constructing a process control model based on the temperature field of the cutting area and a process control cutting method for a crystal rod, which belongs to the field of crystal cutting technology. The construction method collects the surface data, temperature field data and processing data of multiple single pieces to form a first data set; and uses the surface data as a condition to filter the expected temperature field data of a single cut wafer from the first data set, and construct reference processing data of a single cut wafer; thereby forming a process control model based on the comparison of the expected temperature field data with the real-time monitoring temperature field data of the cut wafer to be produced, to analyze and predict the surface condition of the cut wafer to be produced, and based on the reference processing data as a reference for adjusting the processing data. The process control model can establish a model relationship between the surface shape of the cut wafer and the temperature field and processing data, and can provide real-time feedback on the processing status of the cutting process, effectively trace the source, and improve processing efficiency and yield rate.

Description

Technical Field

[0001] The present application relates to a method for constructing a process control model based on a cutting area temperature field and a crystal rod process control cutting method, belonging to the technical field of crystal cutting. Background Art

[0002] Cutting technology is widely used in the field of semiconductor processing because the wafers it cuts have small total thickness variation, curvature and warpage, and a shallow surface damage layer, especially for cutting hard and brittle materials such as silicon, ceramics, and silicon carbide.

[0003] However, current cutting technology still has the following problems: First, due to the high hardness of materials such as silicon carbide (Mohs hardness 9.5) and sapphire (9), second only to diamond, their wire cutting process cycle is long, and the entire process cannot be monitored in real time. Once a product has quality problems due to processing, the entire processing batch of products will be unqualified, resulting in low processing efficiency and poor controllability of product yield. Second, when problems are found during product inspection, there is no way to effectively trace the source, let alone quickly prevent the same problems from occurring in subsequent processing. Third, the wafer processing cycle is long, and the processing status cannot be fed back in real time, which affects the process control capability and effectiveness. The above problems result in the wafer cutting process still being blind cutting, resulting in poor and uneven wafer quality after cutting, which affects the subsequent processing process. Therefore, there is a lack of a process control model and cutting method that can provide real-time feedback and process adjustment for the wafer cutting process. Summary of the Invention

[0004] In order to solve the above problems, a method for constructing a process control model based on the temperature field of the cutting area and a crystal rod process control cutting method are provided. The process control model can combine the surface data, temperature field data and processing data of the cut chip, thereby establishing a model relationship between the surface shape, temperature field and processing. It can provide real-time feedback on the processing status of the cutting process, effectively trace the source, and improve processing efficiency and yield.

[0005] According to one aspect of the present application, a method for constructing a process control model based on a cutting area temperature field is provided, the method comprising the following steps:

[0006] S1. For a crystal rod cutting process of predetermined specifications, collect multiple single-wafer data pairs to form a first data set, wherein each single-wafer data pair in the multiple single-wafer data pairs corresponds one-to-one to a single cut wafer and includes surface shape data, temperature field data, and processing data of the single cut wafer;

[0007] S2. Filtering a second data set from the first data set based on the condition that the surface shape data in the single-wafer data pair falls within a preset expected surface shape data range, using the temperature field data of the second data set as the expected temperature field data of the single-cut wafer, and constructing a reference processing data range for the single-cut wafer based on the processing data of the second data set;

[0008] S3. Form a process control model based on the comparison between the expected temperature field data and the real-time monitoring temperature field data of the wafer to be cut, to analyze and predict the surface shape of the wafer to be cut, and use the reference processing data as a reference for processing data adjustment.

[0009] The existing cutting process adjustment method requires that the cutting be completed and then the cut wafers be finally inspected to obtain the corresponding surface shape results. Therefore, the process adjustment of the cut wafers is inefficient, time-consuming, and has a low yield rate. The relationship between the processing data and the surface shape is determined by experience. When the cut wafers of this batch are unqualified, there is no way to remedy it, and the only option is to remedy it with the next batch of cut wafers.

[0010] The above construction method uses the cutting area temperature field data as a medium to establish a reliable connection between cutting efficiency, yield rate and processing data. Then, by detecting the surface shape of the cut wafer, a connection is established between the cut wafer and the temperature field data, and the relationship between the processing data, temperature field data and surface shape data is further established. In this way, the cutting conditions can be fed back in real time through the temperature field distribution of the cutting area, and this feedback can be verified through the detection results of the final cut wafer. In addition, recording and saving the temperature field data of the cutting area is also conducive to tracing the process anomalies that occur during the cutting process.

[0011] After the model is established, the surface shape of the cut wafers to be produced can be analyzed and predicted based on the temperature field data of the cutting area, thereby guiding the real-time adjustment of the processing data to obtain cut wafers that meet the surface shape requirements. The adjustment of this cutting process is efficient and time-saving. Moreover, since it is a real-time adjustment, it can ensure that the cut wafers of this cutting batch are remedied in time without waiting for subsequent feedback, thereby improving the yield rate of the cut wafers.

[0012] Optionally, step S2 further includes constructing an upper threshold and a lower threshold corresponding to the expected temperature field data. The temperature range formed by the upper threshold and the lower threshold is the temperature range of the expected temperature field data. When the real-time monitored temperature field data exceeds the upper threshold or falls below the lower threshold, it is determined that the surface condition of the cut wafer is unqualified, and the processing data can be adjusted based on the reference processing data range.

[0013] Optionally, the face shape data includes at least one of Bow, Warp, TTV, and LTV;

[0014] The processing data includes at least one of cutting fluid flow, cutting fluid temperature, cutting line speed, cutting line tension, auxiliary material mass concentration, workpiece feed speed, and swing angle.

[0015] Optionally, the temperature field data includes temperature distribution information based on a cross section of the crystal rod.

[0016] Due to the different cutting positions, even the same processing data will lead to differences in the temperature field data at different positions of the crystal rod cross section (i.e., the cutting surface). Therefore, using the temperature distribution of the crystal rod cross section as the temperature field data can build a more systematic process control model, thereby more accurately controlling the cutting process.

[0017] Optionally, the temperature distribution information is grid space distribution temperature data or graphically visualized temperature distribution information.

[0018] This graphical visualization of temperature distribution information is achieved through a temperature measurement system consisting of an infrared detector, an imaging image processor, and a monitor. The infrared detector position can obtain basic information about the temperature field of the cutting area, thereby providing detailed temperature distribution data for the cutting area. The data detected by the infrared detector is transmitted to the imaging processor for processing, and ultimately displayed as a graphical visualization of the temperature distribution information on the monitor. The graphical visualization of the temperature distribution information on the monitor can not only be displayed on-site, but can also be read remotely in real time, enabling online monitoring of the temperature field distribution of the cutting area.

[0019] According to another aspect of the present application, a process-controlled cutting method for a crystal rod is provided, wherein the process control model obtained by any of the construction methods described above is used to predict whether the surface shape of the wafer to be cut is qualified; and / or

[0020] The reference processing data in the process control model obtained by any of the construction methods described above is used as a reference for adjusting the processing data.

[0021] The cutting method relies on the process control model constructed above, predicts whether the surface condition of the cut wafer to be produced is qualified based on the temperature field data, and adjusts the processing data based on the processing data adjustment reference to obtain qualified cut wafers.

[0022] Optionally, the cutting method comprises the following steps:

[0023] P1. Real-time monitoring of the temperature field of the wafer to be cut and obtained first real-time monitoring temperature field data;

[0024] P2. Compare the first real-time monitored temperature field data with the expected temperature field data to obtain a first comparison difference, and use the degree of deviation of the first comparison difference from 0 as a first basis for determining whether the surface condition of the cut wafer to be produced is qualified.

[0025] Optionally, the cutting method further comprises:

[0026] P3. For the wafer to be cut that is unqualified based on the first criterion, adjust the real-time processing data of the wafer to be cut;

[0027] Preferably, the processing data is divided into three levels according to the weight of the influence of the processing data on the temperature field:

[0028] The influence is classified from large to small: the first level includes cutting fluid temperature, workpiece feed speed, and cutting fluid flow rate; the second level includes cutting line speed and auxiliary material mass concentration; the third level includes swing angle and cutting line tension.

[0029] Since in the construction of the above-mentioned process control model, the first real-time monitored temperature field data can be used as a basis for judging whether the surface condition of the cut chip is qualified, the difference between the temperature field data during the cutting process and the expected temperature field data can be determined according to the first comparison difference, thereby judging whether the surface condition of the cut chip is qualified based on the difference.

[0030] The cutting conditions are inferred from the changes in the first comparison difference, and the processing data of unqualified wafers to be cut is adjusted in time to achieve visibility of processing technology adjustments, thereby improving cutting efficiency and yield rate.

[0031] Optionally, the specific method for adjusting the real-time processing data of the cut wafer to be produced is:

[0032] Adjust the type of processing data: first adjust the workpiece feed speed and cutting fluid flow, then adjust the cutting line speed and cutting line tension, and then adjust the swing angle;

[0033] Adjustment method of processing data: when the first contrast difference deviates from 0 to a large extent and is positive, select one or more of reducing the workpiece feed speed, increasing the cutting fluid flow rate, and increasing the cutting line speed; when the first contrast difference deviates from 0 to a large extent and is negative, increase the workpiece feed speed and / or reduce the cutting line speed.

[0034] Optionally, the cutting method further comprises:

[0035] P4, real-time monitoring of the temperature field of the wafer to be cut after adjusting the instant processing data, to obtain second real-time monitoring temperature field data;

[0036] P5. Compare the second real-time monitored temperature field data with the expected temperature field data to obtain a second comparison difference, and use the size of the second comparison difference as a second basis for determining whether the surface condition of the cut wafer to be produced is qualified.

[0037] The temperature field data after timely adjustment of the processing data is analyzed to obtain a second comparison difference. Based on the first comparison difference, the difference between the temperature field data during the cutting process after the adjustment and the expected temperature field data is determined to determine whether the wafers to be cut are qualified. This second comparison difference can further determine the surface condition of the wafers to be cut. If the second comparison difference is too large, exceeding the control range of the process control model, the wafers to be cut can be judged to be in an irreparable state. The cutting process can be stopped in time to avoid wasting cutting time and the next batch of crystal rods can be cut. If the size of the second comparison difference falls within the range of qualified surface condition of the wafers to be cut, it proves that the adjustment of the processing data is effective and qualified wafers can be cut.

[0038] Furthermore, based on the difference between the first and second comparison differences, the influence weight of each processing data on the cutting process can be determined, thereby guiding the model to determine the adjustment order of the processing data according to the size of the first comparison difference. For example, when the first comparison difference is large, that is, the difference between the real-time monitored temperature field data and the expected temperature field data is large, the processing data with a larger influence weight can be directly adjusted to facilitate the second comparison difference to fall within an appropriate range, so that the real-time monitored temperature field data falls within the expected temperature field data range; when the first comparison difference is small, the processing data with a smaller influence weight can be adjusted to avoid the second comparison difference from changing too much compared to the first comparison difference, thereby adjusting the real-time monitored temperature field data within a small range, so that the real-time monitored temperature field data falls within the expected temperature field data range.

[0039] Preferably, the cutting method further comprises:

[0040] P6. For the wafer to be cut that is unqualified based on the second criterion, adjust the real-time processing data of the wafer to be cut.

[0041] Typically, after determining the appropriate temperature range and adjusting the first contrast difference, all wafers can be guaranteed to pass without changing the cutting state. However, if the machine state remains unchanged and the temperature field data deviates from the expected value again, the first contrast difference will deviate again. A second adjustment to the processing data can then be made to return the cutting process to the ideal state, thereby ensuring wafer usability.

[0042] The beneficial effects of this application include but are not limited to:

[0043] 1. According to the method for constructing a process control model based on the temperature field of the cutting area of ​​the present application, by detecting the surface shape of the cut chip and establishing the relationship between the processing data, temperature field data, and surface shape data, the temperature field changes during the cutting process can be monitored in real time, so that the processing data can be adjusted in time to obtain a cut chip with good surface quality.

[0044] 2. According to the method of constructing a process control model based on the cutting area temperature field of this application, the reference processing data is determined according to the cutting equipment used, and then the influence of each processing data on the temperature field data is determined by monitoring the cutting area temperature field distribution under different cutting process conditions.

[0045] 3. According to the crystal rod process control cutting method of the present application, the size of the first comparison difference is used as the first basis for determining whether the surface condition of the cut wafer to be produced is qualified. This can timely judge the working condition details of the crystal rod during the cutting process, which is conducive to further adjusting the processing data to prepare qualified cut wafers.

[0046] 4. According to the crystal rod process control cutting method of the present application, the adjustment order of the processing data can be determined according to the size of the first comparison difference, so that the real-time monitored temperature field data falls within the expected temperature field data range, thereby improving the controllability of the cutting method and thus improving the processing efficiency and product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0048] Figure 1 This is a flow chart of adjusting instant processing data based on first real-time monitoring temperature field data of a cutting area according to Example 2 of the present application. DETAILED DESCRIPTION

[0049] The present application is described in detail below with reference to embodiments, but the present application is not limited to these embodiments.

[0050] Unless otherwise specified, the raw materials in the examples of this application were purchased through commercial channels.

[0051] The following embodiments are described using silicon carbide crystal rods as an example. Those skilled in the art will know that the method for constructing a process control model based on the temperature field in the cutting area and the crystal rod process control cutting method can also be applied to crystal rods of other materials, such as silicon, germanium, gallium arsenide, ceramics, glass, sapphire, etc. The silicon carbide crystal rods used in the following embodiments do not constitute a limitation to this application.

[0052] Example 1

[0053] This embodiment relates to a method for constructing a process control model based on a temperature field in a cutting area, the method comprising the following steps:

[0054] S1. Cutting a silicon carbide crystal rod to determine processing data including cutting fluid flow, cutting fluid temperature, cutting line speed, cutting line tension, auxiliary material mass concentration, workpiece feed speed, and swing angle; monitoring and collecting temperature field data of the crystal rod during the cutting process in real time to obtain grid spatial distribution temperature data of the crystal rod cross section or graphically visualized temperature distribution information; and obtaining surface profile data by detecting the surface profile of a single cut wafer; adjusting each of the above processing data, collecting statistics on the temperature data of the cutting area under different processing data, and obtaining different surface profile data respectively, wherein the above surface profile data, temperature field data, and processing data constitute a first data set;

[0055] S2. From the first data set, a second data set is selected based on the condition that the surface shape data of the single-wafer data pair falls within a preset expected surface shape data range, and the temperature field data of the second data set is used as the expected temperature field data of the single-cut wafer. A reference processing data range for the single-cut wafer is constructed based on the processing data of the second data set.

[0056] S3. Real-time detection of the temperature field in the crystal rod cutting area is performed to form a comparison between the expected temperature field data and the real-time monitoring temperature field data of the wafer to be cut, so as to analyze and predict the surface condition of the wafer to be cut, and a process control model is used as a reference for adjusting the processing data based on the reference processing data.

[0057] According to the above step S1, the silicon carbide ingots to be cut are selected from the silicon carbide ingots produced in the same batch, and all indicators are the same. The specific cutting method is different from the above method as shown in Table 1.

[0058] The auxiliary materials for silicon carbide wafers 1#-15# are diamond powder, polyvinyl pyrrolidone and polyethylene glycol, with a weight ratio of 100:1:2.

[0059] Table 1 Cutting data

[0060]

[0061] The surface shape test was performed on silicon carbide wafers 1# to 15#, and the test results are shown in Table 2. Here, Bow is the bow, Warp is the warpage, TTV is the total thickness deviation, and LTV is the local thickness deviation.

[0062] Table 2 Surface data of cut wafers

[0063]

[0064]

[0065] The Bow value of the cut chip 10# in Table 2 is 8.3μm, the Warp value is 18.5μm, the TTV value is 8.2μm, and the LTV value is 6.1μm. As the expected cutting surface data of this embodiment, the temperature range of the expected temperature field data is determined to be 15-21°C; combined with the cutting data in Table 1, the reference processing data of the cutting fluid flow rate is determined to be 2000Kg / h, the reference processing data of the cutting fluid temperature is determined to be 10°C, the reference processing data of the cutting line speed is determined to be 25m / s, the reference processing data of the cutting line tension is determined to be 25N, the reference processing data of the auxiliary material mass concentration is determined to be 10%, the reference processing data of the workpiece feed speed is determined to be 20μm / min, and the reference processing data range of the swing angle is determined to be 2°.

[0066] The LTV in Table 2 above was tested using the light interferometry method. Since the cut pieces were relatively rough, the LTV of the cut pieces was not divided into different zones. This data mainly reflects the difference between the circumference and the center of the cut piece, and has little to do with cutting at different positions. Therefore, the concept of average value is used here.

[0067] As a preferred embodiment, since the temperature field data is grid space distribution temperature data or graphical visualized temperature distribution information, the cross section of the crystal rod can be divided into four regions from top to bottom, and the width of each region accounts for 25% of the diameter of the crystal rod. The expected temperature field data of the first region has a temperature range of 15 to 19°C, the expected temperature field data of the second region has a temperature range of 17 to 21°C, the expected temperature field data of the third region has a temperature range of 17 to 21°C, and the expected temperature field data of the fourth region has a temperature range of 15 to 19°C.

[0068] Example 2

[0069] This embodiment relates to a process-controlled cutting method for a crystal rod, which uses the process control model obtained by the construction method of Example 1 to predict whether the surface condition of the cut wafer to be produced is qualified, and uses the reference processing data range in the process control model obtained by the construction method of Example 1 as the processing data adjustment interval.

[0070] As an implementation method, refer to Figure 1 , the cutting method comprises the following steps:

[0071] P1. Real-time monitoring of the temperature field of the wafer to be cut and obtained first real-time monitoring temperature field data;

[0072] P2. Compare the first real-time monitored temperature field data with the expected temperature field data to obtain a first comparison difference, and use the degree of deviation of the first comparison difference from 0 as a first basis for determining whether the surface condition of the cut wafer to be produced is qualified.

[0073] According to the conclusion of Example 1, the first real-time monitoring temperature field data of the cut chip is compared with the expected temperature field data in Example 1. If the first real-time monitoring temperature field data falls within the range of the expected temperature field data, it is determined that the surface shape of the cut chip to be produced is qualified. If the first real-time monitoring temperature field data exceeds the range of the expected temperature field data, it is determined that the surface shape of the cut chip to be produced is unqualified.

[0074] And since the temperature field data is grid space distribution temperature data or graphical visualization temperature distribution information, the expected temperature field data will also be different due to different cutting areas. Therefore, the first real-time monitoring temperature field data needs to be compared with the expected temperature field data of the specific cutting area to obtain the first comparison difference.

[0075] As an embodiment, the cutting method further includes: free abrasive wire cutting and fixed abrasive wire cutting.

[0076] P3. For the wafer to be cut that is unqualified based on the first criterion, adjust the real-time processing data of the wafer to be cut.

[0077] When the timely feedback result of the cutting process is that the wafer to be cut is unqualified, the instant processing data can be adjusted in time, that is, the processing data of the wafer to be cut can be adjusted in time, so that the first real-time monitoring temperature field data falls within the expected temperature field data range to obtain the final qualified cut wafer.

[0078] This cutting method has dynamic adjustability and can timely analyze the processing results caused by the processing process based on the size of the first comparison difference as the first basis, so as to timely adjust the corresponding processing data and realize real-time feedback of the processing status, thereby improving the process control capability and control effect of the cutting method, reducing the number of unqualified cut chips, and improving the controllability of product yield.

[0079] As a preferred embodiment, the weight of the influence of processing data on the temperature field is divided into three levels:

[0080] The influence is classified from large to small: the first level includes cutting fluid temperature, workpiece feed speed, and cutting fluid flow rate; the second level includes cutting line speed and auxiliary material mass concentration; the third level includes swing angle and cutting line tension.

[0081] Therefore, the adjustment method of the corresponding processing data can be selected according to the size of the first comparison difference to quickly make the first real-time monitoring temperature field data of the cutting area consistent with the expected temperature field data, avoid the production of cut chips to continue to develop in the direction of unqualified, and improve the adjustment efficiency of the cutting method.

[0082] As an embodiment, the specific method for adjusting the real-time processing data of the wafer to be cut is as follows:

[0083] Adjust the type of processing data: first adjust the workpiece feed speed and cutting fluid flow, then adjust the cutting line speed and cutting line tension, and then adjust the swing angle;

[0084] Adjustment method of processing data: when the first contrast difference deviates from 0 to a large extent and is positive, select one or more of reducing the workpiece feed speed, increasing the cutting fluid flow rate, and increasing the cutting line speed; when the first contrast difference deviates from 0 to a large extent and is negative, increase the workpiece feed speed and / or reduce the cutting line speed.

[0085] As an embodiment, the cutting method further includes:

[0086] P4, real-time monitoring of the temperature field of the wafer to be cut after adjusting the instant processing data, to obtain second real-time monitoring temperature field data;

[0087] P5. Compare the second real-time monitored temperature field data with the expected temperature field data to obtain a second comparison difference, and use the degree to which the second comparison difference deviates from 0 as a second basis for determining whether the surface condition of the wafer to be cut is qualified.

[0088] For the uncut chips to be produced that are judged as unqualified based on the first basis, the cutting method needs to obtain a second contrast difference through the second real-time monitoring data after timely adjusting the instant processing data to determine whether the adjusted instant processing data meets the production requirements of qualified cut chips, further improve the feedback effect of the cutting method, and realize the visibility of the processing data adjustment.

[0089] As a preferred embodiment, the cutting method further comprises:

[0090] P6. For the wafers to be cut that are unqualified based on the second basis, adjust the real-time processing data of the wafers to be cut.

[0091] The foregoing is merely an embodiment of the present application, and the scope of protection of the present application is not limited by these specific embodiments, but is determined by the claims of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc. made within the technical ideas and principles of the present application should be included in the scope of protection of the present application.

Claims

1. A method for constructing a process control model based on the temperature field of the cutting area, characterized in that: The method comprises the following steps: S1. For a crystal rod cutting process of predetermined specifications, a plurality of single-wafer data pairs are collected to form a first data set, wherein each single-wafer data pair corresponds one-to-one to a single cut wafer and includes surface data, temperature field data, and processing data of the single cut wafer; the temperature field data includes temperature distribution information based on a cross section of the crystal rod, and the temperature distribution information is grid-spaced temperature distribution data or graphically visualized temperature distribution information; S2. Filtering a second data set from the first data set based on the condition that the surface shape data in the single-wafer data pair falls within a preset expected surface shape data range, using the temperature field data of the second data set as expected temperature field data for a single cut wafer, constructing an upper threshold value and a lower threshold value corresponding to the expected temperature field data, and constructing reference processing data for a single cut wafer based on the processing data of the second data set; S3. Form a process control model based on the comparison between the expected temperature field data and the real-time monitoring temperature field data of the wafer to be cut, to analyze and predict the surface shape of the wafer to be cut, and use the reference processing data as a reference for processing data.

2. The construction method according to claim 1, characterized in that The face shape data includes at least one of Bow, Warp, TTV, and LTV; The processing data includes at least one of cutting fluid flow, cutting fluid temperature, cutting line speed, cutting line tension, auxiliary material mass concentration, workpiece feed speed, and swing angle.

3. A crystal rod process-controlled cutting method, characterized in that: The cutting method uses a process control model obtained by the construction method according to any one of claims 1 to 2 to predict whether the surface shape of the wafer to be cut is qualified; and / or The reference processing data in the process control model obtained by the construction method according to any one of claims 1 to 2 is used as a reference for adjusting the processing data.

4. The crystal rod process-controlled cutting method according to claim 3, characterized in that: The cutting method comprises the following steps: P1. Real-time monitoring of the temperature field of the wafer to be cut and obtained first real-time monitoring temperature field data; P2. Compare the first real-time monitored temperature field data with the expected temperature field data to obtain a first comparison difference, and use the degree of deviation of the first comparison difference from 0 as a first basis for determining whether the surface condition of the cut wafer to be produced is qualified.

5. The crystal rod process-controlled cutting method according to claim 4, characterized in that: The cutting method further comprises: P3. For the wafer to be cut that is unqualified according to the first criterion, adjust the real-time processing data of the wafer to be cut.

6. The crystal rod process-controlled cutting method according to claim 5, characterized in that: According to the weight of the influence of processing data on the temperature field, the processing data is divided into three levels: The influence is classified from large to small: the first level includes cutting fluid temperature, workpiece feed speed, and cutting fluid flow rate; the second level includes cutting line speed and auxiliary material mass concentration; the third level includes swing angle and cutting line tension.

7. The crystal rod process-controlled cutting method according to claim 5, characterized in that: The specific method for adjusting the real-time processing data of the wafer to be cut is as follows: Adjust the type of processing data: first adjust the workpiece feed speed and cutting fluid flow, then adjust the cutting line speed and cutting line tension, and then adjust the swing angle; Adjustment method of processing data: when the first contrast difference deviates greatly from 0 and is positive, one or more of reducing the workpiece feed speed, increasing the cutting fluid flow rate, and increasing the cutting line speed are selected; When the first contrast difference deviates greatly from 0 and is negative, the workpiece feed speed is increased and / or the cutting line speed is decreased.

8. The crystal rod process-controlled cutting method according to claim 5, characterized in that: The cutting method further comprises: P4, real-time monitoring of the temperature field of the wafer to be cut after adjusting the instant processing data, to obtain second real-time monitoring temperature field data; P5. Compare the second real-time monitored temperature field data with the expected temperature field data to obtain a second comparison difference, and use the degree to which the second comparison difference deviates from 0 as a second basis for determining whether the surface condition of the cut wafer to be produced is qualified.

9. The crystal rod process-controlled cutting method according to claim 8, characterized in that: The cutting method further comprises: P6. For the wafer to be cut that is unqualified based on the second criterion, adjust the real-time processing data of the wafer to be cut.

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