An organic bifunctional device and a method of making the same

Abstract

The application discloses an organic bifunctional device and a preparation method thereof. The organic bifunctional device is composed of a transparent glass substrate, an anode layer, a hole transport layer, an exciton regulation layer, an active doping layer, an electron transport layer and a cathode layer. Under the driving of an applied forward voltage, the organic bifunctional device can realize electroluminescence function, and under the driving of an applied reverse voltage, the device can realize ultraviolet detection function. The organic bifunctional device has the dual functions of electroluminescence and ultraviolet detection, has the characteristics of high efficiency, ultrathin thickness and integrability, and has the advantages of simple preparation process, short preparation time and low cost.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of organic optoelectronics, in particular to an organic bifunctional device and a preparation method thereof. BACKGROUND

[0002] As a new technology in the new era, since the 21st century, organic optoelectronic technology has made great progress and development with extensive research in industry and academia. The most representative organic optoelectronic device is organic electroluminescent device, i.e. OLED. OLED device is the first to be studied and is the best commercialized organic semiconductor device at present. It can be used for flexible display and lighting. The display is mainly applied to small and medium-sized screens, such as mobile phones, tablets, etc. In recent years, with the market saturation, manufacturers such as Jingdongfang have gradually entered the field of flexible vehicle display. Due to its solid-state light emission, flexibility, good environmental adaptability and other advantages, it will be widely used in the field of display. OLED also has good color rendering index and bright color in lighting. Organic photodetector, i.e. OPD, has not been commercialized on a large scale compared with OLED, but its application field in the future will also be very broad, including but not limited to missile tracking, aerospace, environmental monitoring, smart home, etc. Based on the three kinds of devices, a variety of bifunctional or multifunctional devices can be extended, among which the ultraviolet detection-electroluminescence bifunctional device is paid more attention by researchers due to its wide application scenarios.

[0003] However, the traditional organic optoelectronic device has some defects due to the shortcomings of materials and preparation process: 1. The substrate materials commonly used in traditional organic optoelectronic devices include glass, quartz, silicon, etc. However, glass substrate, quartz substrate and silicon substrate have the disadvantages of hard texture, heavy weight, inconvenience to carry, non-degradable, etc., and are easy to break, not flexible, and cannot adapt to the trend of wearable and integrated devices in the future; 2. The traditional organic optoelectronic device has single function and poor integration, such as the traditional ultraviolet detector does not have organic electroluminescence function; 3. The thickness of the traditional organic optoelectronic device is large, the material consumption is large, and the pollution is large. If it is applied on a large scale, a large amount of electronic waste will be generated, which is not conducive to alleviating the increasingly serious energy and environmental problems; 4. The performance of the traditional organic multifunctional device is poor, and the service life of the organic device is generally lower than that of the inorganic device, which cannot be compared with the performance and service life of the corresponding single function device; 5. The preparation process of the traditional organic multifunctional device is complex, the equipment requirement is high, the preparation is cumbersome, the time consumption is high, the material utilization rate is low, and the cost is high.

[0004] Therefore, an organic bifunctional device and a preparation method thereof are developed to solve the above problems. SUMMARY

[0005] The organic bifunctional device and a preparation method thereof are designed to solve the above problems.

[0006] The application achieves the above object by the following technical solutions:

[0007] An organic bifunctional device comprises, from bottom to top, a transparent substrate, an anode layer, a hole transport layer, an exciton regulation layer, an active doping layer, an electron transport layer and a cathode layer, the active doping layer is made of a mixture of a host material and a guest material, the mass ratio of the guest material in the active doping layer is 0-10%, the mass ratio of the host material in the active doping layer is 90%-100%, the host material comprises material one, material two and material three, and the guest material comprises material four and material five.

[0008] The molecular structure of the material one is as follows:

[0009]

[0010] The molecular structure of the material two is as follows:

[0011]

[0012] The molecular structure of the material three is as follows:

[0013]

[0014] The molecular structure of the material four is as follows:

[0015]

[0016] The molecular structure of the material five is as follows:

[0017] .

[0018] A preparation method of an organic bifunctional device comprises the following steps:

[0019] S1, cleaning a substrate composed of a transparent substrate and an anode, and drying the substrate with dry nitrogen after cleaning;

[0020] S2, moving the dried transparent substrate into a vacuum chamber for plasma pretreatment;

[0021] S3, starting the preparation of an organic thin film in an organic material evaporation chamber with high vacuum degree, and sequentially preparing a hole transport layer, an exciton regulation layer, an active doping layer and an electron transport layer according to the structure of the organic bifunctional device;

[0022] S4, preparing a cathode layer in a vacuum evaporation chamber;

[0023] S5, test the current-voltage characteristic curve of the bifunctional device under ultraviolet light irradiation and no ultraviolet light irradiation, and test the current-voltage-brightness characteristic curve and the luminescence spectrum of the bifunctional device.

[0024] The present application has the advantages of:

[0025] 1. By applying an external voltage to the positive and negative electrodes of the device, the internal electric field acts on the triplet excitons in the excited state and the polarons with different electric properties, thereby forming new excitons, and further increasing the number of effective excitons to achieve higher quantum efficiency than traditional bifunctional devices, and low efficiency roll-off characteristics;

[0026] 2. The device can realize the multifunctional device of organic electroluminescent device electroluminescent function and organic ultraviolet detector ultraviolet detection function;

[0027] 3. The device has high electroluminescent performance and ultraviolet detection performance, which meets the requirements of wearable and flexible devices;

[0028] 4. High integration, so the device is ultra-thin, and the total thickness of the device is not more than 200nm except the substrate thickness;

[0029] 5. The preparation process is simple, the equipment requirement is low, the preparation time is short, and the cost is low. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a structural schematic diagram of the organic bifunctional device in the present application;

[0031] Figure 2 is the current density-voltage characteristic curve of the organic bifunctional device in Example 1 provided by the present application under ultraviolet light (wavelength 365nm, intensity 7.4mW / cm2) irradiation and no ultraviolet light irradiation;

[0032] Figure 3 is the current-voltage-brightness characteristic curve of the organic bifunctional device in Example 1 provided by the present application;

[0033] Figure 4 is the test curve diagram of the luminescence spectrum of the organic bifunctional device in Example 1 provided by the present application;

[0034] 1, transparent substrate, 2, anode layer, 3, hole transport layer, 4, exciton regulation layer, 5, active doping layer, 6, electron transport layer, 7, cathode layer, 8, test circuit. DETAILED DESCRIPTION

[0035] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will be combined with the accompanying drawings to make a clear and complete description of the technical solutions in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0036] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0037] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0038] In the description of the present application, it should be understood that the terms "upper", "lower", "inner", "outer", "left", "right", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly placed when the product of the present application is used, or the orientation or positional relationship commonly understood by those skilled in the art, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0039] In addition, the terms "first", "second", etc. are only used for differentiation in description, and cannot be understood as indicating or implying relative importance.

[0040] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "arranged", "connected", etc. should be understood broadly, for example, "connected" can be fixedly connected, or detachably connected, or integrally connected; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements. For those of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0041] The specific embodiments of the present application will be described in detail below in combination with the accompanying drawings.

[0042] As Figure 1As shown, an organic bifunctional device includes, from bottom to top, a transparent substrate 1, an anode layer 2, a hole transport layer 3, an exciton regulation layer 4, an active doping layer 5, an electron transport layer 6, and a cathode layer 7. The active doping layer is made of a mixture of a host material and a guest material. The mass ratio of the guest material in the active doping layer is 0-10%, and the mass ratio of the host material in the active doping layer is 90-100%. The host material includes material one, material two, and material three. The guest material includes material four and material five.

[0043] The molecular structure of material one is as follows:

[0044]

[0045] The molecular structure of material two is as follows:

[0046]

[0047] The molecular structure of material three is as follows:

[0048]

[0049] The molecular structure of material four is as follows:

[0050]

[0051] The molecular structure of material five is as follows:

[0052] .

[0053] The test circuit 8 can be used to test the light-emitting function and ultraviolet detection function of the device. The test circuit 8 includes two power supplies with opposite positive and negative electrodes. A single-pole double-throw switch can be used to select different power supply connectors for the positive and negative electrodes of the device. Under the driving of an external forward voltage, the organic bifunctional device can realize electroluminescence function. Under the driving of an external reverse voltage, the device can realize ultraviolet detection function.

[0054] In some embodiments, the weight ratio of the host material to the guest material in the active doping layer is: 0% guest material and 100% host material, or 5% guest material and 95% host material, or 10% guest material and 90% host material.

[0055] In some embodiments, the transparent substrate has good light transmission performance in the ultraviolet and visible light regions, has certain ability to prevent water vapor and oxygen penetration, and has good surface flatness. The preparation material of the transparent substrate is at least one of glass, a transparent polymer flexible material, or a biodegradable flexible material; wherein the transparent polymer flexible material is at least one of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, chlorovinyl resin, and polyacrylic acid; and the biodegradable flexible material is at least one of plant fiber, silk fibroin, gelatin, polylactic acid, glucose, viral cellulose, polylactic acid, poly(lactic-co-glycolic acid), polyvinyl alcohol, polyvinylpyrrolidone, polylactone, polyhydroxyalkanoate, polysaccharides (such as shellac, chitosan, and hyaluronic acid), polyol acid and its copolymer, collagen gel, and fibrin gel.

[0056] In some embodiments, the anode layer serves as a connection layer of the device to an external bias voltage, and thus requires good electrical conductivity, ultraviolet and visible light transparency, and a high work function. The preparation material of the anode layer is at least one of indium tin oxide (ITO), conductive polymer poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonate), graphene, carbon nanotubes, metal element nanowires, metal alloy nanowires, and metal heterojunction nanowires.

[0057] In some embodiments, the anode layer serves as a connection layer of the device to an external bias voltage, and thus requires good electrical conductivity, ultraviolet and visible light transparency, and a high work function. The preparation material of the anode layer is at least one of indium tin oxide (ITO), conductive polymer poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonate), graphene, carbon nanotubes, metal element nanowires, metal alloy nanowires, and metal heterojunction nanowires.

[0058] The metal alloy nanowire is at least one of copper-iron alloy nanowire, silver-iron alloy nanowire, gold-iron alloy nanowire, aluminum-iron alloy nanowire, nickel-iron alloy nanowire, cobalt-iron alloy nanowire, manganese-iron alloy nanowire, cadmium-iron alloy nanowire, indium-iron alloy nanowire, tin-iron alloy nanowire, tungsten-iron alloy nanowire, platinum-iron alloy nanowire, silver-copper alloy nanowire, gold-copper alloy nanowire, aluminum-copper alloy nanowire, nickel-copper alloy nanowire, cobalt-copper alloy nanowire, manganese-copper alloy nanowire, cadmium-copper alloy nanowire, silver-copper alloy nanowire, tin-copper alloy nanowire, tungsten-copper alloy nanowire, platinum-copper alloy nanowire, gold-silver alloy nanowire, aluminum-silver alloy nanowire, nickel-silver alloy nanowire, cobalt-silver alloy nanowire, manganese-silver alloy nanowire, cadmium-silver alloy nanowire, indium-silver alloy nanowire, tin-silver alloy nanowire, tungsten-silver alloy nanowire, platinum-silver alloy nanowire, aluminum-gold alloy nanowire, nickel-gold alloy nanowire, cobalt-gold alloy nanowire, manganese-gold alloy nanowire, cadmium-gold alloy nanowire, indium-gold alloy nanowire, tin-gold alloy nanowire, tungsten-gold alloy nanowire, cobalt-nickel alloy nanowire, manganese-nickel alloy nanowire, cadmium-nickel alloy nanowire, indium-nickel alloy nanowire, tin-nickel alloy nanowire, tungsten-nickel alloy nanowire, platinum-nickel alloy nanowire, cadmium-manganese alloy nanowire, indium-manganese alloy nanowire, tin-manganese alloy nanowire, tungsten-manganese alloy nanowire, platinum-manganese alloy nanowire, indium-cadmium alloy nanowire, tin-cadmium alloy nanowire, tungsten-cadmium alloy nanowire, platinum-cadmium alloy nanowire, tin-indium alloy nanowire, tungsten-indium alloy nanowire, platinum-indium alloy nanowire, tungsten-tin alloy nanowire, platinum-tin alloy nanowire, or platinum-tungsten alloy nanowire.

[0059] The metal heterojunction nanowire is at least one of copper-iron heterojunction nanowire, silver-iron heterojunction nanowire, gold-iron heterojunction nanowire, aluminum-iron heterojunction nanowire, nickel-iron heterojunction nanowire, cobalt-iron heterojunction nanowire, manganese-iron heterojunction nanowire, cadmium-iron heterojunction nanowire, indium-iron heterojunction nanowire, tin-iron heterojunction nanowire, tungsten-iron heterojunction nanowire, platinum-iron heterojunction nanowire, silver-copper heterojunction nanowire, gold-copper heterojunction nanowire, aluminum-copper heterojunction nanowire, nickel-copper heterojunction nanowire, cobalt-copper heterojunction nanowire, manganese-copper heterojunction nanowire, cadmium-copper heterojunction nanowire, silver-copper heterojunction nanowire, tin-copper heterojunction nanowire, tungsten-copper heterojunction nanowire, platinum-copper heterojunction nanowire, gold-silver heterojunction nanowire, aluminum-silver heterojunction nanowire, nickel-silver heterojunction nanowire, cobalt-silver heterojunction nanowire, manganese-silver heterojunction nanowire, cadmium-silver heterojunction nanowire, indium-silver heterojunction nanowire, tin-silver heterojunction nanowire, tungsten-silver heterojunction nanowire, platinum-silver heterojunction nanowire, aluminum-gold heterojunction nanowire, nickel-gold heterojunction nanowire, cobalt-gold heterojunction nanowire, manganese-gold heterojunction nanowire, cadmium-gold heterojunction nanowire, indium-gold heterojunction nanowire, tin-gold heterojunction nanowire, tungsten-gold heterojunction nanowire, cobalt-nickel heterojunction nanowire, manganese-nickel heterojunction nanowire, cadmium-nickel heterojunction nanowire, indium-nickel heterojunction nanowire, tin-nickel heterojunction nanowire, tungsten-nickel heterojunction nanowire, platinum-nickel heterojunction nanowire, cadmium-manganese heterojunction nanowire, indium-manganese heterojunction nanowire, tin-manganese heterojunction nanowire, tungsten-manganese heterojunction nanowire, platinum-manganese heterojunction nanowire, indium-cadmium heterojunction nanowire, tin-cadmium heterojunction nanowire, tungsten-cadmium heterojunction nanowire, platinum-cadmium heterojunction nanowire, tin-indium heterojunction nanowire, tungsten-indium heterojunction nanowire, platinum-indium heterojunction nanowire, tungsten-tin heterojunction nanowire, platinum-tin heterojunction nanowire, or platinum-tungsten heterojunction nanowire.

[0060] In some embodiments, the hole transport layer is a connecting layer between the anode layer and the active doped layer, and it is required to have good hole transport capacity. The hole transport layer is prepared from at least one of 3,4-ethylenedioxythiophene mixed polystyrene sulfonate, polyaniline organic conductive polymer, aromatic diamine compound, star-shaped triphenylamine compound, carbazole polymer, poly-N-vinyl carbazole, 1,10-phenanthroline derivative, bis(2-methyl-8-quinolinate)triphenylsilanol aluminum (III), bis(2-methyl-8-quinolinate)-4-phenol aluminum (III), or bis(2-methyl-8-quinolinate)-4-phenylphenol aluminum (III).

[0061] In some embodiments, the absolute value of the HOMO energy level of the exciton regulation layer material is not higher than the absolute value of the HOMO energy level of the organic active layer material, and the absolute value of the LUMO energy level of the spectrum regulation layer material is not higher than the absolute value of the LUMO energy level of the organic active layer material.

[0062] In some embodiments, the electron transport layer is a connecting layer between the active doped layer and the cathode layer, which requires good electron transport capacity. The electron transport layer is prepared from at least one of 2-(4-diphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, oxadiazole electron transport material 2-(4-diphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, or imidazole electron transport material 1,3,5-tri(N-phenyl-2-benzimidazole-2) benzene.

[0063] In some embodiments, the cathode layer is a connecting layer between the device and an applied bias, which requires good conductivity and a low work function. The cathode layer is prepared from a metal thin film or an alloy thin film, the metal thin film being one of lithium, magnesium, calcium, strontium, aluminum, and indium; and the alloy thin film being an alloy of any one of lithium, calcium, strontium, aluminum, or indium and copper or silver.

[0064] A method for preparing an organic bifunctional device, comprising the following steps:

[0065] S1, cleaning a substrate composed of a transparent substrate and an anode, and then blowing dry with dry nitrogen;

[0066] S2, moving the blown dry transparent substrate into a vacuum chamber for plasma pretreatment;

[0067] S3, starting the preparation of an organic thin film in an organic material evaporation chamber with high vacuum degree, and sequentially preparing a hole transport layer, an exciton regulation layer, an active doped layer, and an electron transport layer according to the structure of the organic bifunctional device;

[0068] S4, preparing a cathode layer in a vacuum evaporation chamber;

[0069] S5, testing the current-voltage characteristic curve of the bifunctional device under ultraviolet light irradiation and without ultraviolet light irradiation, and testing the current-voltage-brightness characteristic curve and the emission spectrum of the bifunctional device.

[0070] In step S3, the preparation of the hole transport layer, the exciton regulation layer, the active doped layer, and the electron transport layer includes: sequentially performing spin coating of the hole transport layer, the exciton regulation layer, the active doped layer, and the electron transport layer in a spin coater according to the structure of the organic bifunctional device; or combining evaporation in a high vacuum chamber and spin coating in a spin coater to sequentially prepare the hole transport layer, the exciton regulation layer, the active doped layer, and the electron transport layer according to the structure of the bifunctional device.

[0071] The following are specific embodiments of the present application:

[0072] Embodiment 1

[0073] The hole transport layer material of the device is NPB, the exciton regulating layer material is TAPC, the active doping layer material is material one (100%) : material four (0%), the electron transport material is Bphen, and the cathode layer is Mg:Ag alloy. The whole device structure is described as:

[0074] Glass substrate / ITO / NPB (30 nm) / TAPC (10 nm) / active doping layer (20 nm) / Bphen (40 nm) / Mg:Ag (100 nm);

[0075] The preparation method is as follows:

[0076] ①The transparent conductive substrate ITO glass is ultrasonically cleaned with detergent, acetone solution, deionized water and ethanol solution, and dried with dry nitrogen after cleaning. The ITO film on the glass substrate serves as the anode layer of the device, and the sheet resistance of the ITO film is 15 Ω / □, and the film thickness is 100 nm.

[0077] ②The dried substrate is moved into a vacuum chamber, and the ITO glass is subjected to low-energy oxygen plasma pretreatment for 5 minutes under an oxygen pressure of 20 Pa, and the sputtering power is 20 W.

[0078] ③The treated substrate is placed in an evaporation chamber with high vacuum degree, and the evaporation of the organic thin film is started. According to the device structure described above, the materials NPB layer 30 nm, TAPC layer 10 nm, active doping layer 10 nm, and Bphen layer 40 nm are evaporated in turn. The evaporation rate of each organic layer is 0.1 nm / s, and the evaporation rate and thickness are monitored by a film thickness instrument.

[0079] ④After the evaporation of the organic layer, the preparation of the metal electrode is carried out. The gas pressure is 3×10 -3 Pa, the evaporation rate is 1 nm / s, the ratio of Mg:Ag in the alloy is 10:1, and the film thickness is 100 nm. The evaporation rate and thickness are monitored by a film thickness instrument.

[0080] ⑤The current-voltage characteristic curves of the device under ultraviolet light irradiation and without ultraviolet light irradiation are tested, and the current-voltage-brightness characteristic curves and the luminescence spectrum of the device are also tested.

[0081] The current-voltage characteristic curves of the device under ultraviolet light irradiation and without ultraviolet light irradiation, the current-voltage-brightness characteristic curves and the luminescence spectrum curves of the device are shown in FIGS. 3, Figure 2 、 3 and 4, respectively.

[0082] Example 2

[0083] The hole transport layer material of the device is NPB, the exciton regulating layer material is TAPC, the active doping layer material is material one (95%): material four (5%), the electron transport material is Bphen, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0084] Glass substrate / ITO / NPB (30 nm) / TAPC (10 nm) / active doping layer (20 nm) / Bphen (40 nm) / Mg:Ag (100 nm)

[0085] The device preparation process is similar to that of Example 1.

[0086] Example 3

[0087] The hole transport layer material of the device is NPB, the exciton regulating layer material is TAPC, the active doping layer material is material one (90%): material four (10%), the electron transport material is Bphen, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0088] Glass substrate / ITO / NPB (30 nm) / TAPC (10 nm) / active doping layer (20 nm) / Bphen (40 nm) / Mg:Ag (100 nm)

[0089] The device preparation process is similar to that of Example 1.

[0090] Example 4

[0091] The hole transport layer material of the device is NPB, the exciton regulating layer material is TCTA, the active doping layer material is material one (100%): material five (0%), the electron transport material is TPBi, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0092] Glass substrate / ITO / NPB (30 nm) / TCTA (10 nm) / active doping layer (20 nm) / TPBi (40 nm) / Mg:Ag (100 nm)

[0093] The device preparation process is similar to that of Example 1.

[0094] Example 5

[0095] The hole transport layer material of the device is NPB, the exciton regulating layer material is TCTA, the active doping layer material is material one (95%): material five (5%), the electron transport material is TPBi, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0096] Glass substrate / ITO / NPB (30 nm) / TCTA (10 nm) / active doped layer (20 nm) / TPBi (30 nm) / Mg:Ag (100 nm)

[0097] The device was prepared in a similar manner as in Example 1.

[0098] Example 6

[0099] The hole transport layer material of the device was NPB, the exciton control layer material was TCTA, the active doped layer material was material one (90%): material five (10%), the electron transport material was TPBi, and the cathode layer used Mg:Ag alloy. The entire device structure was described as:

[0100] Glass substrate / ITO / NPB (30 nm) / TCTA (10 nm) / active doped layer (20 nm) / TPBi (30 nm) / Mg:Ag (100 nm)

[0101] The device was prepared in a similar manner as in Example 1.

[0102] Example 7

[0103] The hole transport layer material of the device was NPB, the exciton control layer material was mCP, the active doped layer material was material two (100%): material four (0%), the electron transport material was TPBi, and the cathode layer used Mg:Ag alloy. The entire device structure was described as:

[0104] Glass substrate / ITO / NPB (30 nm) / mCP (10 nm) / active doped layer (20 nm) / TPBi (30 nm) / Mg:Ag (100 nm)

[0105] The device was prepared in a similar manner as in Example 1.

[0106] Example 8

[0107] The hole transport layer material of the device was NPB, the exciton control layer material was mCP, the active doped layer material was material two (95%): material four (5%), the electron transport material was TPBi, and the cathode layer used Mg:Ag alloy. The entire device structure was described as:

[0108] Glass substrate / ITO / NPB (30 nm) / mCP (10 nm) / active doped layer (20 nm) / TPBi (40 nm) / Mg:Ag (100 nm)

[0109] The device was prepared in a similar manner as in Example 1.

[0110] Example 9

[0111] The hole transport layer material of the device is NPB, the exciton regulating layer material is mCP, the active doped layer material is material two (90%): material four (10%), the electron transport material is TPBi, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0112] Glass substrate / ITO / NPB (30 nm) / mCP (10 nm) / active doped layer (20 nm) / TPBi (40 nm) / Mg:Ag (100 nm)

[0113] The device preparation process is similar to that of Example 1.

[0114] Example 10

[0115] The hole transport layer material of the device is TAPC, the exciton regulating layer material is mCP, the active doped layer material is material two (100%): material five (0%), the electron transport material is Bphen, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0116] Glass substrate / ITO / TAPC (30 nm) / mCP (10 nm) / active doped layer (20 nm) / Bphen (40 nm) / Mg:Ag (100 nm)

[0117] The device preparation process is similar to that of Example 1.

[0118] Example 11

[0119] The hole transport layer material of the device is TAPC, the exciton regulating layer material is mCP, the active doped layer material is material two (95%): material five (5%), the electron transport material is Bphen, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0120] Glass substrate / ITO / TAPC (30 nm) / mCP (10 nm) / active doped layer (20 nm) / Bphen (40 nm) / Mg:Ag (100 nm)

[0121] The device preparation process is similar to that of Example 1.

[0122] Example 12

[0123] The hole transport layer material of the device is TAPC, the exciton regulating layer material is mCP, the active doped layer material is material two (90%): material five (10%), the electron transport material is Bphen, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:

[0124] Glass substrate / ITO / TAPC (30nm) / mCP (10nm) / active doping layer (20nm) / Bphen (40nm) / Mg:Ag (100nm)

[0125] The preparation process of the device is similar to that of Example 1.

[0126] Example 13

[0127] The device's hole transport layer material is NPB, the exciton regulation layer material is TCTA, the active doping layer material is material three (100%): material four (0%), the electron transport material is BCP, and the cathode layer is Mg:Ag alloy. The entire device structure is described as follows:

[0128] The preparation process of the glass substrate / ITO / NPB (30 nm) / TCTA (10 nm) / active doping layer (20 nm) / BCP (30 nm) / Mg:Ag (100 nm) device is similar to that of Example 1.

[0129] Example 14

[0130] The device's hole transport layer is made of α-NPD, the exciton regulation layer is made of CBP, the active doping layer is made of Material 3 (95%) and Material 4 (5%), the electron transport material is BCP, and the cathode layer is made of Mg:Ag alloy. The entire device structure is described as follows:

[0131] Glass substrate / ITO / α-NPD (30nm) / CBP (20nm) / active doping layer (20nm) / BCP (40nm) / Mg:Ag (100nm)

[0132] The preparation process of the device is similar to that of Example 1.

[0133] Example 15

[0134] The device's hole transport layer is made of α-NPD, the exciton regulation layer is made of CBP, the active doping layer is made of Material 3 (90%) and Material 4 (10%), the electron transport material is BCP, and the cathode layer is made of Mg:Ag alloy. The entire device structure is described as follows:

[0135] Glass substrate / ITO / α-NPD (30nm) / CBP (20nm) / active doping layer (20nm) / BCP (40nm) / Mg:Ag (100nm)

[0136] The preparation process of the device is similar to that of Example 1.

[0137] The above merely describes the preferred embodiments of the present application, and it should be pointed out that, for those skilled in the art, several improvements and refinements can be made without departing from the technical principles of the present application, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. An organic bifunctional device, characterized in that: The invention comprises a transparent substrate, an anode layer, a hole transport layer, an exciton regulation layer, an active doping layer, an electron transport layer and a cathode layer arranged in sequence from bottom to top, wherein the active doping layer is made by mixing a host material and a guest material, the guest material accounts for 0-10% by mass in the active doping layer, the host material accounts for 90%-100% by mass in the active doping layer, the host material is material one, material two or material three, and the guest material is material four or material five; the mixing of the host material and the guest material in the active doping layer includes any of the following situations: when the host material is material one, the guest material is material four, when the host material is material one, the guest material is material five, when the host material is material two, the guest material is material four, when the host material is material two, the guest material is material five, and when the host material is material three, the guest material is material four; The molecular structure of material 1 is: ， The molecular structure of material 2 is: ， The molecular structure of material 3 is: ， The molecular structure of material 4 is: ， The molecular structure of material 5 is: 。 2. The organic bifunctional device according to claim 1, characterized in that: The weight ratio of the host material to the guest material in the active doping layer is: 0% guest material, 100% host material, or 5% guest material, 95% host material, or 10% guest material, 90% host material.

3. The organic bifunctional device according to claim 1, characterized in that: The transparent substrate is prepared from at least one of glass, a transparent polymer flexible material, or a biodegradable flexible material; wherein the transparent polymer flexible material is at least one of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, chlorovinyl resin, and polyacrylic acid; and the biodegradable flexible material is at least one of plant fiber, silk fibroin, gelatin, polylactic acid, glucose, viral cellulose, polylactic acid, polylactic acid-glycolic acid copolymer, polyvinyl alcohol, polyvinyl pyrrolidone, polycaprolactone, polyhydroxyalkanoate, polysaccharides, polyalcoholic acid and copolymers thereof, collagen gel, and fibrin gel.

4. The organic bifunctional device according to claim 1, characterized in that: The anode layer is prepared from at least one of indium tin oxide (ITO), conductive polymer poly (3,4-ethylenedioxythiophene) / polystyrene sulfonate, graphene, carbon nanotubes, metal element nanowires, metal alloy nanowires, and metal heterojunction nanowires. The metal nanowires are at least one of iron nanowires, copper nanowires, silver nanowires, gold nanowires, aluminum nanowires, nickel nanowires, cobalt nanowires, manganese nanowires, cadmium nanowires, indium nanowires, tin nanowires, tungsten nanowires, and platinum nanowires. The metal alloy nanowires are copper-iron alloy nanowires, silver-iron alloy nanowires, gold-iron alloy nanowires, aluminum-iron alloy nanowires, nickel-iron alloy nanowires, cobalt-iron alloy nanowires, manganese-iron alloy nanowires, cadmium-iron alloy nanowires, indium-iron alloy nanowires, tin-iron alloy nanowires, tungsten-iron alloy nanowires, platinum-iron alloy nanowires, silver-copper alloy nanowires, gold-copper alloy nanowires, aluminum-copper alloy nanowires, nickel-copper alloy nanowires, cobalt-copper alloy nanowires, manganese-copper alloy nanowires, cadmium-copper alloy nanowires, silver-copper alloy nanowires, tin-copper alloy nanowires, tungsten-copper alloy nanowires, platinum-copper alloy nanowires, gold-silver alloy nanowires, aluminum-silver alloy nanowires, nickel-silver alloy nanowires, cobalt-silver alloy nanowires, manganese-silver alloy nanowires, cadmium-silver alloy nanowires, indium-silver alloy nanowires, tin-silver alloy nanowires, tungsten-silver alloy nanowires At least one of gold nanowires, platinum-silver alloy nanowires, aluminum-gold alloy nanowires, nickel-gold alloy nanowires, cobalt-gold alloy nanowires, manganese-gold alloy nanowires, cadmium-gold alloy nanowires, indium-gold alloy nanowires, tin-gold alloy nanowires, tungsten-gold alloy nanowires, cobalt-nickel alloy nanowires, manganese-nickel alloy nanowires, cadmium-nickel alloy nanowires, indium-nickel alloy nanowires, tin-nickel alloy nanowires, tungsten-nickel alloy nanowires, platinum-nickel alloy nanowires, cadmium-manganese alloy nanowires, indium-manganese alloy nanowires, tin-manganese alloy nanowires, tungsten-manganese alloy nanowires, platinum-manganese alloy nanowires, indium-cadmium alloy nanowires, tin-cadmium alloy nanowires, tungsten-cadmium alloy nanowires, platinum-cadmium alloy nanowires, tin-indium alloy nanowires, tungsten-indium alloy nanowires, platinum-indium alloy nanowires, tungsten-tin alloy nanowires, platinum-tin alloy nanowires, or platinum-tungsten alloy nanowires; The metal heterojunction nanowires are copper-iron heterojunction nanowires, silver-iron heterojunction nanowires, gold-iron heterojunction nanowires, aluminum-iron heterojunction nanowires, nickel-iron heterojunction nanowires, cobalt-iron heterojunction nanowires, manganese-iron heterojunction nanowires, cadmium-iron heterojunction nanowires, indium-iron heterojunction nanowires, tin-iron heterojunction nanowires, tungsten-iron heterojunction nanowires, platinum-iron heterojunction nanowires, silver-copper heterojunction nanowires, gold-copper heterojunction nanowires, aluminum-copper heterojunction nanowires, nickel-iron heterojunction nanowires, Copper heterojunction nanowires, cobalt-copper heterojunction nanowires, manganese-copper heterojunction nanowires, cadmium-copper heterojunction nanowires, silver-copper heterojunction nanowires, tin-copper heterojunction nanowires, tungsten-copper heterojunction nanowires, platinum-copper heterojunction nanowires, gold-silver heterojunction nanowires, aluminum-silver heterojunction nanowires, nickel-silver heterojunction nanowires, cobalt-silver heterojunction nanowires, manganese-silver heterojunction nanowires, cadmium-silver heterojunction nanowires, indium-silver heterojunction nanowires, tin-silver heterojunction nanowires, tungsten-silver heterojunction nanowires Heterojunction nanowires, platinum-silver heterojunction nanowires, aluminum-gold heterojunction nanowires, nickel-gold heterojunction nanowires, cobalt-gold heterojunction nanowires, manganese-gold heterojunction nanowires, cadmium-gold heterojunction nanowires, indium-gold heterojunction nanowires, tin-gold heterojunction nanowires, tungsten-gold heterojunction nanowires, cobalt-nickel heterojunction nanowires, manganese-nickel heterojunction nanowires, cadmium-nickel heterojunction nanowires, indium-nickel heterojunction nanowires, tin-nickel heterojunction nanowires, tungsten-nickel heterojunction nanowires, platinum-nickel heterojunction nanowires At least one of the heterojunction nanowires, cadmium-manganese heterojunction nanowires, indium-manganese heterojunction nanowires, tin-manganese heterojunction nanowires, tungsten-manganese heterojunction nanowires, platinum-manganese heterojunction nanowires, indium-cadmium heterojunction nanowires, tin-cadmium heterojunction nanowires, tungsten-cadmium heterojunction nanowires, platinum-cadmium heterojunction nanowires, tin-indium heterojunction nanowires, tungsten-indium heterojunction nanowires, platinum-indium heterojunction nanowires, tungsten-tin heterojunction nanowires, platinum-tin heterojunction nanowires or platinum-tungsten heterojunction nanowires.

5. The organic bifunctional device according to claim 1, characterized in that: The preparation material of the hole transport layer is at least one of 3,4-ethylenedioxythiophene mixed polystyrene sulfonate, polyaniline organic conductive polymer, aromatic diamine compound, star-shaped triphenylamine compound, carbazole polymer, poly N-vinyl carbazole, 1,10-phenanthroline derivative, bis(2-methyl-8-quinolinato)triphenylsilanol aluminum (III), bis(2-methyl-8-quinolinato)-4-phenol aluminum (III) or bis(2-methyl-8-quinolinato)-4-phenylphenol aluminum (III).

6. The organic bifunctional device according to claim 1, characterized in that: The preparation material of the electron transport layer is at least one of 2-(4-diphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, oxadiazole electron transport material 2-(4-diphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, or imidazole electron transport material 1,3,5-tris(N-phenyl-2-benzimidazole-2)benzene.

7. The organic bifunctional device according to claim 1, characterized in that: The cathode layer is made of a metal film or an alloy film. The metal film is one of lithium, magnesium, calcium, strontium, aluminum, and indium. The alloy film is an alloy of any one of lithium, calcium, strontium, aluminum, or indium with copper or silver.

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