A homogeneous junction type sensing-in-computing integrated device and its manufacturing method

Abstract

The present invention discloses a homogeneous junction type sensing and computing integrated device and a preparation method thereof. The homogeneous junction type sensing and computing integrated device includes: a flexible substrate; a bottom electrode, which is an organic conductive polymer and is formed on the flexible substrate; a first functional layer, which is a ternary n-type oxide semiconductor thin film after annealing and has a crystalline phase with optoelectronic response, and is formed on the bottom electrode; a second functional layer, which is a ternary n-type oxide semiconductor thin film without annealing and has the same material as the first functional layer, and together they form a homogeneous junction; a plurality of grooves spaced apart from each other, penetrating through the second functional layer and the first functional layer to the bottom electrode, and filled with an isolation layer therein; a top electrode, which is formed on the second functional layer. Among them, the first functional layer generates photo-generated carriers under illumination, senses optical information, and feeds it back to the device in the form of current. At the same time, by virtue of the memristive characteristics of the second functional layer, the memory storage of the overall device state is realized. By continuously applying optoelectronic signals to the device, continuous modulation of the device conductance is achieved, thereby realizing weight alternation in neuromorphic computing.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a homogeneous junction type sensing, storage and computing integrated device and a preparation method thereof. Background Art

[0002] The working modes of chips in computers are all based on the von Neumann architecture, which have problems such as limited computing efficiency, huge power consumption, and difficulty in meeting the processing requirements of big data. There is an urgent need to develop a new type of memory-computation integrated device to improve the current situation of physical separation between storage units and computing units. As a new type of memory-computation integrated device, neuromorphic devices can realize the functions of storage and computing in the same device unit, avoiding the frequent transmission and movement of data between the storage chip and the computing chip, and greatly improving the computing efficiency of the chip and reducing the power consumption of the chip. Therefore, neuromorphic devices have obvious advantages in realizing memory-computation integration in the post-Moore era.

[0003] On the other hand, there is also a huge gap between the information sensing unit and the information storage and computing unit. Not only additional lead interconnections are required, but also an additional analog-to-digital converter needs to be added for signal conversion, which limits the improvement of the overall efficiency of the chip. Although neuromorphic devices can integrate the storage and computing functions, it is still difficult to realize the information acquisition function, resulting in limited efficiency of the overall chip. Inspired by biology, developing a sensing, storage and computing integrated device similar to the visual system is crucial for realizing efficient information acquisition. The human visual system can not only realize the perception of optical information, but also perform partial preprocessing before formal computing to adjust the light information sensing state, so as to efficiently and timely identify and memorize the perceived information. This working mode inspires the structural design and development of integrated circuit chips, and the working efficiency of the chip will be improved by integrating the functions of sensing, storage and computing in a single device. Therefore, it is of great significance to design the smallest device unit from aspects such as device structure and material system and develop a device with the function of integrated sensing, storage and computing. Summary of the Invention

[0004] The present invention discloses a homogeneous junction type sensing, storage and computing integrated device and a preparation method thereof. By performing different process treatments on the same material, not only the process compatibility problem and the energy band matching problem between different material systems are avoided, but also the response of the device is extended from the neuromorphic memory-computation function of electrical excitation to the integrated function of optical and electrical co-excitation for sensing, storage and computing, avoiding the frequent transmission of information between different units, greatly reducing the production cost and system energy consumption, and being used to construct a flexible integrated neuromorphic computing system for sensing, storage and computing.

[0005] The homogeneous junction type sensing, memory and computing integrated device includes: a flexible substrate; a bottom electrode, which is an organic conductive polymer and is formed on the flexible substrate; a first functional layer, which is a ternary n-type oxide semiconductor thin film after annealing and has a crystalline phase with optoelectronic response, and is formed on the bottom electrode; a second functional layer, which is a ternary n-type oxide semiconductor thin film without annealing and has the same material as the first functional layer, and together they form a homogeneous junction; a plurality of grooves spaced apart from each other, penetrating through the second functional layer and the first functional layer to the bottom electrode, and filled with an isolation layer therein; a top electrode, which is formed on the second functional layer. Among them, the first functional layer generates photo-generated carriers under illumination, senses optical information, and feeds it back to the device in the form of current. At the same time, by virtue of the memristive characteristics of the second functional layer, the memory storage of the overall device state is realized. By continuously applying optoelectronic signals to the device, continuous modulation of the device conductance is achieved, thereby realizing the weight update in neuromorphic computing.

[0006] In the homogeneous junction type sensing, memory and computing integrated device of the present invention, preferably, the organic conductive polymer is PEDOT:PSS, polyacetylene, polythiophene, polypyrrole, poly-p-phenylene, polyaniline or poly(p-phenylene vinylene).

[0007] In the homogeneous junction type sensing, memory and computing integrated device of the present invention, preferably, the ternary n-type oxide semiconductor thin film is ZnTiOx, ZnTaOx, HfTiOx or HfTaOx.

[0008] In the homogeneous junction type sensing, memory and computing integrated device of the present invention, preferably, the annealing temperature is 400 - 600 °C, and the duration is 30 minutes - 2 hours.

[0009] In the homogeneous junction type sensing, memory and computing integrated device of the present invention, preferably, the isolation layer is a Si3N4 thin film, a SiO2 thin film, an Al2O3 thin film or a silicon oxynitride.

[0010] The preparation method of the homogeneous junction type sensing-memory-computing integrated device includes the following steps: forming an organic conductive polymer on a flexible substrate as the bottom electrode; forming a ternary n-type oxide semiconductor thin film on the bottom electrode and performing annealing treatment to transform it into a crystalline phase with optoelectronic response as the first functional layer; forming a ternary n-type oxide semiconductor thin film on the first functional layer as the second functional layer, which has the same material as the first functional layer, to jointly form a homogeneous junction; etching the second functional layer and the first functional layer through the second functional layer and the first functional layer to the bottom electrode to form a plurality of grooves spaced apart from each other; filling an isolation layer in the grooves; forming a top electrode on the second functional layer. Among them, the first functional layer generates photo-generated carriers under light illumination, senses optical information, and feeds it back to the device in the form of current. At the same time, by virtue of the memristive characteristics of the second functional layer, the memory storage of the overall device state is realized. By continuously applying optoelectronic signals to the device, continuous modulation of the device conductance is achieved, thereby realizing the weight update in neuromorphic computing.

[0011] In the preparation method of the homogeneous junction type sensing-memory-computing integrated device of the present invention, preferably, the organic conductive polymer is PEDOT:PSS, polyacetylene, polythiophene, polypyrrole, polybenzene, polyaniline or poly(phenylene vinylene).

[0012] In the preparation method of the homogeneous junction type sensing-memory-computing integrated device of the present invention, preferably, the ternary n-type oxide semiconductor thin film is ZnTiOx, ZnTaOx, HfTiOx or HfTaOx.

[0013] In the preparation method of the homogeneous junction type sensing-memory-computing integrated device of the present invention, preferably, the annealing temperature is 400 - 600 °C and the duration is 30 minutes - 2 hours.

[0014] In the preparation method of the homogeneous junction type sensing-memory-computing integrated device of the present invention, preferably, the thickness of the ternary n-type oxide semiconductor thin film is 10 - 20 nm.

[0015] Beneficial effects:

[0016] (1) Developing neuromorphic devices to replace traditional von Neumann storage devices can achieve the working modes of brain-like computing and parallel computing, and complete complex data computing tasks with extremely low power consumption, meeting the development requirements of new devices in the post-Moore era.

[0017] (2) Inspired by the biological system, breaking the traditional separated device structure, and directly realizing the functions of sensing, storage and computing in the same device through the design of the device functional layer, avoiding the frequent transfer of information between different functional units, improving the processing efficiency of the chip and reducing the power consumption of the chip.

[0018] (3) The extension of device functions is achieved by adopting the design of a homogeneous junction. The function extension is realized only through the treatment of the material system, which greatly reduces the production cost, simplifies the production process, and avoids problems such as process mismatch and energy band mismatch between different materials. Description of the Drawings

[0019] Figure 1 It is a flowchart of the preparation method of the homogeneous junction type sensing-memory-computing integrated device.

[0020] Figures 2 to 8 It is a schematic structural diagram of each stage of the preparation method of the homogeneous junction type sensing-memory-computing integrated device. Detailed Embodiments

[0021] In order to make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. The described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.

[0022] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical", "horizontal", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0023] In addition, many specific details of the present invention are described below, such as the structure, materials, dimensions, processing techniques and technologies of the device, in order to understand the present invention more clearly. However, as those skilled in the art can understand, the present invention can be implemented without these specific details. Unless specifically stated below, each part of the device can be composed of materials well-known to those skilled in the art, or materials with similar functions developed in the future can be used.

[0024] Figure 1 It is a flowchart of the preparation method of the homogeneous junction type sensing-memory-computing integrated device. As Figure 1 shown, the preparation method of the homogeneous junction type sensing-memory-computing integrated device includes the following steps:

[0025] Step S1: Prepare a flexible polyimide substrate 100 as the substrate of the homojunction-type sensing, computing, and integrating device. Ultrasonically clean the substrate 100 in acetone, ethanol, and deionized water for 5 - 30 minutes respectively, and then activate the substrate surface in an oxygen atmosphere using oxygen plasma, with the power controlled at 100 - 300 W and the duration controlled at 5 - 30 minutes. Subsequently, grow a PEDOT:PSS organic conductive thin film as the bottom electrode 101 of the device on the activated substrate 100 by means such as spin coating, thermal evaporation, or inkjet printing, with the thickness controlled at 10 - 50 nm. Then perform annealing treatment on a hot plate in a glove box, with the annealing temperature at 60 - 100 °C and the annealing duration at 5 - 10 minutes. The resulting structure is as shown in Figure 2 shown. The flexible substrate can be a substrate material that can withstand high temperatures such as polyimide and mica substrates. The bottom electrode material can be an organic conductive polymer such as PEDOT:PSS, polyacetylene, polythiophene, polypyrrole, poly-p-phenylene, polyaniline, and poly(p-phenylene vinylene).

[0026] Step S2: Grow a ternary n-type oxide semiconductor thin film of ZnTiOx with a thickness of 10 - 20 nm on the bottom electrode 101 by means such as atomic layer deposition, chemical vapor deposition, physical vapor deposition, or pulsed laser deposition as the first functional layer 102. The resulting structure is as shown in Figure 3 shown. The ternary n-type oxide semiconductor thin film can be materials such as ZnTiOx, ZnTaOx, HfTiOx, and HfTaOx.

[0027] Step S3: Anneal the first functional layer 102 by means such as rapid thermal annealing or a vacuum annealing furnace to transform it into a crystalline phase with optoelectronic response. The resulting structure is as shown in Figure 4 shown. The annealing temperature is 400 - 600 °C, the annealing gas atmosphere is an inert gas such as N2 and Ar, and the annealing duration is 30 minutes - 2 hours.

[0028] Step S4: Grow a ternary n-type oxide semiconductor thin film of ZnTiOx with a thickness of 10 - 20 nm on the annealed first functional layer 102 by means such as atomic layer deposition, chemical vapor deposition, physical vapor deposition, or pulsed laser deposition as the second functional layer 103 to achieve neuromorphic computing and storage functions. The resulting structure is as shown in Figure 5 shown. The material selection of the second functional layer needs to be the same as that of the first functional layer, and together with the first functional layer, it forms a homojunction to achieve the homojunction effect with different functions. The ternary n-type oxide semiconductor thin film can be materials such as ZnTiOx, ZnTaOx, HfTiOx, and HfTaOx.

[0029] Step S5, etch the first functional layer 102 and the second functional layer 103 by means of photolithography and reactive ion etching, deep plasma etching, ion milling etching, laser ablation or wet etching to form a plurality of spaced grooves 104, and the resulting structure is as Figure 6 shown. The depth of the grooves generated by etching is 20 - 40 nm, the width of the grooves is 100 - 200 nm, and the bottom of the grooves needs to reach the bottom electrode. The etching gas is preferably CF4, HBr, HCl, CHF3, SF4, etc.

[0030] Step S6, fill the Si3N4 thin film in the grooves 104 as the isolation layer 105 of different sense - storage - computing integrated devices by means of photolithography and atomic layer deposition, chemical vapor deposition, physical vapor deposition or pulsed laser deposition, and the resulting structure is as Figure 7 shown. The material of the isolation layer can be selected from Si3N4 thin film, SiO2 thin film, Al2O3 thin film, silicon oxynitride, etc.

[0031] Step S7, grow a metal Ag with a thickness of 10 - 50 nm on the second functional layer 103 of different devices by means of photolithography and physical vapor deposition, electron beam evaporation, thermal evaporation, etc. as the top electrode 106 of the device, and complete the preparation of the sense - storage - computing integrated device. As Figure 8 shown, the core system of the homojunction device includes the first functional layer 102 and the second functional layer 103. The first functional layer 102 can generate photo - generated carriers under light illumination, sense optical information, and feedback it in the form of current to the device. At the same time, with the memristive characteristics of the second functional layer 103, the memory storage effect of the overall device state can be realized. By continuously applying optoelectronic signals to the device, the device can achieve continuous modulation of conductance to realize the effect of weight update in neuromorphic computing. The top electrode can be selected from Ag, Al, Cu, Ni, Co, Ru, etc.

[0032] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention.

Claims

1. A homogeneous junction type sensing, memory and computing integrated device, characterized in that, It includes: A flexible substrate; A bottom electrode, which is an organic conductive polymer and is formed on the flexible substrate; A first functional layer, which is a ternary n-type oxide semiconductor thin film after annealing, has a crystalline phase with optoelectronic response, and is formed on the bottom electrode; A second functional layer, which is an unannealed ternary n-type oxide semiconductor thin film, has the same material as the first functional layer, and together constitutes a homogeneous junction; A plurality of grooves spaced apart from each other, penetrating through the second functional layer and the first functional layer to the bottom electrode, and filled with an isolation layer therein; A top electrode, formed on the second functional layer, Wherein, the first functional layer generates photo-generated carriers under illumination, senses optical information, and feeds it back to the device in the form of current. At the same time, by virtue of the memristive characteristics of the second functional layer, the memory storage of the overall device state is realized. By continuously applying optoelectronic signals to the device, continuous modulation of the device conductance is achieved, thereby realizing weight update in neuromorphic computing.

2. The homogeneous junction type sensing, memory and computing integrated device according to claim 1, characterized in that, The organic conductive polymer is PEDOT:PSS, polyacetylene, polythiophene, polypyrrole, polybenzene, polyaniline or poly(phenylene vinylene).

3. The homogeneous junction type sensing, memory and computing integrated device according to claim 1, characterized in that, The ternary n-type oxide semiconductor thin film is ZnTiOx, ZnTaOx, HfTiOx or HfTaOx.

4. The homogeneous junction type sensing, memory and computing integrated device according to claim 1, characterized in that, The annealing temperature is 400 - 600 °C, and the duration is 30 minutes - 2 hours.

5. The homogeneous junction type sensing, memory and computing integrated device according to claim 1, characterized in that, The isolation layer is a Si3N4 thin film, a SiO2 thin film, an Al2O3 thin film or a silicon oxynitride.

6. A method for manufacturing a homogeneous junction type sensing, memory and computing integrated device, characterized in that, It includes the following steps: Form an organic conductive polymer on a flexible substrate as a bottom electrode; Form a ternary n-type oxide semiconductor thin film on the bottom electrode, and perform annealing treatment to transform it into a crystalline phase with optoelectronic response as the first functional layer; Form a ternary n-type oxide semiconductor thin film on the first functional layer as the second functional layer, which has the same material as the first functional layer, and together constitutes a homogeneous junction; Etch the second functional layer and the first functional layer, penetrating through the second functional layer and the first functional layer to the bottom electrode, to form a plurality of grooves spaced apart from each other; Fill the isolation layer in the grooves; Form a top electrode on the second functional layer, Wherein, the first functional layer generates photo-generated carriers under illumination, senses optical information, and feeds it back to the device in the form of current. At the same time, by virtue of the memristive characteristics of the second functional layer, the memory storage of the overall device state is realized. By continuously applying optoelectronic signals to the device, continuous modulation of the device conductance is achieved, thereby realizing weight update in neuromorphic computing.

7. The preparation method of the homogeneous junction type sense-storage-computation integrated device according to claim 6, wherein the organic conductive polymer is PEDOT:PSS, polyacetylene, polythiophene, polypyrrole, poly(phenylene), polyaniline or poly(phenylene vinylene).

8. The preparation method of the homogeneous junction type sense-storage-computation integrated device according to claim 6, wherein the ternary n-type oxide semiconductor thin film is ZnTiOx, ZnTaOx, HfTiOx or HfTaOx.

9. The preparation method of the homogeneous junction type sense-storage-computation integrated device according to claim 6, wherein the temperature of the annealing is 400 - 600 °C, and the duration is 30 minutes - 2 hours.

10. The preparation method of the homogeneous junction type sense-storage-computation integrated device according to claim 6, wherein the thickness of the ternary n-type oxide semiconductor thin film is 10 - 20 nm.

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