A two-dimensional niobium triselenide nanobelt-based resistive random memory device, a preparation method and application thereof
By growing two-dimensional niobium triselenide nanoribbons and fabricating electrodes using chemical vapor transport, combined with lithiation treatment, the problems of insufficient storage performance and tolerance of existing memristor devices are solved. This results in a resistive variable random access memory device with high and low resistance switching and excellent storage performance, suitable for non-volatile storage.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
- Filing Date
- 2023-03-17
- Publication Date
- 2026-04-21
AI Technical Summary
Memristor devices made from existing two-dimensional materials have insufficient storage performance and tolerance during high-to-low impedance state transitions, making it difficult to meet the needs of neuromorphic computing.
Two-dimensional niobium triselenide nanoribbons were grown using chemical vapor transport, and electrodes were fabricated at both ends of the nanoribbons. Conductive filaments were formed by lithiation to achieve high-low resistance switching, thus fabricating a resistive random access memory device based on two-dimensional niobium triselenide nanoribbons.
It achieves resistive random access memory (RAM) devices with excellent high-low impedance switching behavior, superior storage behavior, and good tolerance, featuring high switching ratio and low level variability, and is suitable for non-volatile memory applications.
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Figure CN116322290B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of memory device technology, and in particular to a resistive random access memory device based on two-dimensional niobium triselenide nanoribbons, its preparation method, and its application. Background Technology
[0002] Inspired by the computational patterns of neurons and synapses in the human brain, neuromorphic computing networks possess capabilities such as large-scale parallel computing, self-adaptation, and self-learning. They can also achieve in-situ computation through Ohm's law and Kirchhoff's current law. Neuromorphic devices constructed in this way are considered among the most promising electronic components to overcome the traditional von Neumann architecture. Among the many electronic components used to implement neuromorphic computing, memristors have become the most advantageous choice due to their high integration density, ultra-low power consumption, ability to integrate storage and computation, and ability to simulate synaptic plasticity. Memristors can be divided into digital memristors and analog memristors based on their memristor behavior. Digital memristors exhibit sudden increases and decreases in current during electrical testing; the device conductance suddenly increases and decreases when a certain voltage value is reached during scanning. This abrupt change is characteristic of digital memristors. This reversible switching behavior allows digital memristors to be used for non-volatile storage. Analog memristors, on the other hand, exhibit gradual changes in current with external voltage stimulation; this non-linear transmission characteristic is remarkably similar to the behavior of biological synapses. The electrical behavior of analog memristors can effectively simulate synaptic plasticity and has wide applications in fields such as neuromorphic devices.
[0003] As one of the ideal devices for realizing neuromorphic computing, it is particularly important to study the underlying physical mechanisms of memristors. Memristors can reversibly switch resistance between a high-resistivity state (HRS) and a low-resistivity state (LRS). The process of a memristor transitioning from high resistance to low resistance is called the device turn-on process (SET). Conversely, the transition from a low-resistivity state to a high-resistivity state is defined as the device turn-off process (RESET). Although various low-switching voltage (<1V) memristor devices can be realized using two-dimensional materials, their storage performance and tolerance still need to be improved. Summary of the Invention
[0004] The purpose of this invention is to provide a resistive switching random access memory (RSM) device based on two-dimensional niobium triselenide nanoribbons, its fabrication method, and its applications. The RSM device fabricated by the method exhibits good high-low resistance switching behavior, excellent storage behavior, and robustness.
[0005] To achieve the above-mentioned objectives, the present invention provides the following technical solution:
[0006] This invention provides a method for fabricating a resistive random access memory device based on two-dimensional niobium triselenide nanoribbons, comprising the following steps:
[0007] Two-dimensional niobium triselenide nanoribbons were prepared on the surface of a silicon substrate to obtain a silicon substrate with two-dimensional niobium triselenide nanoribbons on the surface.
[0008] After coating the surface of the silicon substrate containing two-dimensional niobium triselenide nanoribbons with photoresist, electrode sites are etched at both ends of the two-dimensional niobium triselenide nanoribbons to prepare electrodes. After removing the photoresist, lithiation is performed to obtain the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons.
[0009] Preferably, the raw materials for preparing the two-dimensional niobium triselenide nanoribbons include niobium powder, selenium powder, and a transport agent;
[0010] The transport agent is elemental iodine.
[0011] Preferably, the mass ratio of niobium powder, selenium powder and transport agent is 250:648:(30-40).
[0012] Preferably, the procedure for growing two-dimensional niobium triselenide nanoribbons includes: heating from room temperature to 650-700°C, holding at that temperature for 600-700 min, and then cooling back to room temperature.
[0013] Preferably, the heating rate is 2.8–3 °C / min;
[0014] The cooling rate is 1.8–2 °C / min.
[0015] Preferably, the extension direction of the electrode is parallel to or perpendicular to the direction of the two-dimensional niobium triselenide nanoribbon.
[0016] Preferably, the electrodes prepared at both ends of the two-dimensional niobium triselenide nanoribbon are titanium electrodes and gold electrodes stacked sequentially; or Bi electrodes and Au electrodes stacked sequentially.
[0017] Preferably, the degumming is performed using a degumming solvent, and the degumming solvent is dimethyl sulfoxide.
[0018] The present invention also provides a resistive random access memory device based on two-dimensional niobium triselenide nanoribbons prepared by the preparation method described above, comprising a silicon substrate and two-dimensional niobium triselenide nanoribbons disposed on the surface of the silicon substrate;
[0019] It also includes electrodes mounted at both ends of the two-dimensional niobium triselenide nanoribbon.
[0020] The present invention also provides the application of the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons described above in the field of non-volatile memory.
[0021] This invention provides a method for fabricating a resistive random access memory (RAM) device based on two-dimensional niobium triselenide nanoribbons, comprising the following steps: fabricating two-dimensional niobium triselenide nanoribbons on the surface of a silicon substrate to obtain a silicon substrate with two-dimensional niobium triselenide nanoribbons on its surface; coating the surface of the silicon substrate containing two-dimensional niobium triselenide nanoribbons with photoresist, etching electrode sites at both ends of the two-dimensional niobium triselenide nanoribbons to fabricate electrodes, removing the photoresist, and then performing lithiation to obtain the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons. This invention utilizes a chemical vapor deposition (CVD) method to grow two-dimensional niobium triselenide nanoribbons with high crystal quality and large lateral dimensions, resulting in significant anisotropy. Simultaneously, the niobium triselenide nanoribbons contribute to a memristor exhibiting low switching voltage, high on / off ratio, low volatility, and long-term retention performance. Lithification of the device can be achieved simply by immersion in a butyllithium solution, a relatively simple process that reduces the requirements for device fabrication. Following lithiation, the entry of lithium ions leads to the formation and breakage of conductive filaments, enabling the device to achieve excellent storage behavior. The resistive random access memory (RAM) device based on niobium triselenide nanoribbons prepared using this method exhibits a linearity <0.3 and a computational recognition accuracy greater than 85%. Attached Figure Description
[0022] Figure 1 This is a schematic diagram of the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons described in Example 1;
[0023] Figure 2 Image IV shows the high and low resistance switching of the device before and after lithiation under the voltage mechanism in Example 1.
[0024] Figure 3 The image shows the high and low resistance switching of the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons obtained after lithiation in Example 1 under different limiting currents (10 μA and 50 μA) (IV image).
[0025] Figure 4 The image shows a statistical graph of the switching voltage and high / low resistance after lithiation in Example 1.
[0026] Figure 5 This is Figure IV of the resistive random access memory device (perpendicular to the nanobelt direction) based on two-dimensional niobium triselenide nanobelts described in Example 1. Detailed Implementation
[0027] This invention provides a method for fabricating a resistive random access memory device based on two-dimensional niobium triselenide nanoribbons, comprising the following steps:
[0028] Two-dimensional niobium triselenide nanoribbons were prepared on the surface of a silicon substrate to obtain a silicon substrate with two-dimensional niobium triselenide nanoribbons on the surface.
[0029] After coating the surface of the silicon substrate containing two-dimensional niobium triselenide nanoribbons with photoresist, electrode sites are etched at both ends of the two-dimensional niobium triselenide nanoribbons to prepare electrodes. After removing the photoresist, lithiation is performed to obtain the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons.
[0030] In this invention, unless otherwise specified, all raw materials used in the preparation are commercially available products well known to those skilled in the art.
[0031] This invention prepares two-dimensional niobium triselenide nanoribbons on the surface of a silicon substrate, thereby obtaining a silicon substrate with two-dimensional niobium triselenide nanoribbons on its surface.
[0032] In this invention, the preferred process for preparing two-dimensional niobium triselenide nanoribbons on the surface of a silicon substrate is as follows: using a chemical vapor transport method, two-dimensional niobium triselenide nanoribbons are grown on the surface of a mica sheet, and the two-dimensional niobium triselenide nanoribbons are transferred to the silicon substrate to obtain a silicon substrate containing two-dimensional niobium triselenide nanoribbons on its surface.
[0033] In this invention, the raw materials for preparing the two-dimensional niobium triselenide nanoribbons preferably include niobium powder, selenium powder, and a transport agent; the transport agent is preferably elemental iodine.
[0034] In this invention, the mass ratio of niobium powder, selenium powder and transport agent is preferably 250:648:(30-40), and more preferably 250:648:30.
[0035] In this invention, the preferred procedure for growing two-dimensional niobium triselenide nanoribbons includes: heating from room temperature to 650–700°C, holding at that temperature for 600–700 min, and then cooling to room temperature; more preferably, it includes: heating from room temperature to 660–690°C, holding at that temperature for 620–680 min, and then cooling to room temperature; most preferably, it includes: heating from room temperature to 670–680°C, holding at that temperature for 630–660 min, and then cooling to room temperature. In this invention, the heating rate is preferably 2.8–3°C / min, more preferably 2.9°C / min; the cooling rate is preferably 1.8–2°C / min, more preferably 1.9°C / min.
[0036] In this invention, the process of growing two-dimensional niobium triselenide nanoribbons on the surface of mica sheets using chemical vapor transport is as follows: niobium powder, selenium powder and transport agent are mixed and placed at the bottom of a quartz tube, then a mica sheet is placed in the tube, the tube is sealed using an oxyhydrogen flame sealing machine, and then the quartz tube is placed in a tube furnace for chemical vapor transport.
[0037] In this invention, controlling the conditions and parameters of the chemical vapor transport within the above-mentioned range can better obtain two-dimensional materials with good crystal quality and large lateral dimensions.
[0038] In this invention, the preferred method of transfer is wet transfer. This invention does not impose any special limitations on the wet transfer process, and any process well known to those skilled in the art can be used.
[0039] After obtaining a silicon substrate with two-dimensional niobium triselenide nanoribbons on its surface, the present invention coats the surface of the silicon substrate with two-dimensional niobium triselenide nanoribbons with photoresist, etches electrode sites at both ends of the two-dimensional niobium triselenide nanoribbons to prepare electrodes, removes the photoresist, and then performs lithiation to obtain the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons.
[0040] In this invention, the preferred method for coating the photoresist is spin coating; the preferred spin coating process is to drop-coat the photoresist onto the surface of a silicon substrate containing two-dimensional niobium triselenide nanoribbons, and then spin-coat the photoresist using a spin coater. This invention does not impose any special limitations on the spin coating conditions; conditions well-known to those skilled in the art can be used.
[0041] In this invention, the etching is preferably photolithography.
[0042] In this invention, the electrode preparation process is preferably carried out using a laser direct writing device. After preparing electrodes at both ends of the two-dimensional niobium triselenide nanoribbon, the electrodes are deposited by high-vacuum electron beam evaporation coating machine. This invention does not impose any special limitations on the electrode deposition process, and any process well known to those skilled in the art can be used.
[0043] In this invention, the contact portion between the electrode and the two-dimensional niobium triselenide nanoribbon is preferably rectangular; the extension direction of the electrode is preferably parallel to or perpendicular to the direction of the two-dimensional niobium triselenide nanoribbon.
[0044] In this invention, the two-dimensional niobium triselenide nanoribbons have obvious anisotropy, so the electrochemical performance of electrodes built in different directions is significantly different; at the same time, the storage performance of the device is the best when it is along the direction of the nanowire; and the differences of the material itself in different axes are beneficial for performing some more complex performance simulations and subsequent more precise high-order calculations.
[0045] In this invention, the electrodes prepared at both ends of the two-dimensional niobium triselenide nanoribbon are preferably titanium electrodes and gold electrodes stacked sequentially; or Bi electrodes and Au electrodes stacked sequentially. When the electrodes are titanium electrodes and gold electrodes stacked sequentially, the thickness of the titanium electrode is preferably 5 nm; the thickness of the gold electrode is preferably 40 nm; when the electrodes are Bi electrodes and Au electrodes stacked sequentially, the thickness of the Bi electrode is preferably 10 nm, and the thickness of the Au electrode is preferably 50 nm.
[0046] In this invention, the degumming is preferably performed using a degumming solvent, and the degumming solvent preferably includes dimethyl sulfoxide.
[0047] In this invention, the lithium-ionizing agent used for lithium-ionization is preferably a n-butyllithium solution; the n-butyllithium solution preferably includes n-butyllithium and n-hexane; the mass ratio of n-butyllithium to n-hexane is preferably 15:85.
[0048] In this invention, the lithiation method is preferably immersion; the immersion time is preferably 1.5 to 3 hours, more preferably 2 hours; and the temperature is preferably room temperature.
[0049] In this invention, lithiation allows ions to be inserted into the two-dimensional niobium triselenide nanoribbons, leading to the formation and breakage of conductive filaments, which enables the device to achieve excellent storage behavior.
[0050] The present invention also provides a resistive random access memory device based on two-dimensional niobium triselenide nanoribbons prepared by the preparation method described above, comprising a silicon substrate and two-dimensional niobium triselenide nanoribbons disposed on the surface of the silicon substrate;
[0051] It also includes electrodes mounted at both ends of the two-dimensional niobium triselenide nanoribbon.
[0052] In this invention, the width of the two-dimensional niobium triselenide nanoribbon is preferably 15-20 μm, and the thickness is preferably 50-80 nm.
[0053] This invention also provides the application of the resistive random access memory (RAM) device based on two-dimensional niobium triselenide nanoribbons described above in the field of non-volatile memory. This invention does not impose any special limitations on the method of this application; any method well-known to those skilled in the art can be used.
[0054] The following detailed description, in conjunction with embodiments, illustrates the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons, its preparation method, and its applications provided by the present invention. However, these descriptions should not be construed as limiting the scope of protection of the present invention.
[0055] Example 1
[0056] 250 mg of Nb powder and 648 mg of Se powder were mixed evenly at a molar ratio of 1:3. Then, 30 mg of elemental iodine was added. The resulting mixed powder was placed at the bottom of a quartz tube, and a mica sheet was placed in it. The tube was sealed using an oxyhydrogen flame sealing machine. The quartz tube was then placed in a tube furnace and heated from room temperature to 680°C for 230 min, held at that temperature for 600 min, and then cooled to room temperature for 350 min. The resulting two-dimensional niobium triselenide nanoribbons (19 μm long, 14 μm wide, and 50 nm thick) were transferred to a silicon substrate using a wet transfer method to obtain a silicon substrate with two-dimensional niobium triselenide nanoribbons on its surface.
[0057] Photoresist was drop-coated onto a silicon substrate containing two-dimensional niobium triselenide nanoribbons. The photoresist was then uniformly spin-coated onto the silicon substrate using a spin coater. Electrodes were fabricated at both ends of the two-dimensional niobium triselenide nanoribbons using a laser direct writing device (the two electrodes were parallel to and perpendicular to the nanoribbon direction, respectively). A 5 nm thick Ti electrode and a 40 nm thick Au electrode were then deposited using a high-vacuum electron beam evaporation deposition machine. The substrate was then placed in dimethyl sulfoxide (DMSO) for photoresist removal. Finally, the substrate was immersed in a lithium n-butyl solution (containing 15 wt% lithium n-butyl and 85 wt% hexane) for 2 hours to allow lithium ions to intercalate into the material, resulting in the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons (structure as shown). Figure 1 (As shown).
[0058] Example 2
[0059] 250 mg of Nb powder and 648 mg of Se powder were mixed evenly at a molar ratio of 1:3. Then, 35 mg of elemental iodine was added. The resulting mixed powder was placed at the bottom of a quartz tube, and a mica sheet was placed in it. The tube was sealed using an oxyhydrogen flame sealing machine. The quartz tube was then placed in a tube furnace and heated from room temperature to 700°C for 250 min, held at that temperature for 700 min, and then cooled to room temperature for 320 min. The resulting two-dimensional niobium triselenide nanoribbons (24 μm long, 15 μm wide, and 80 nm thick) were transferred to a silicon substrate using a wet transfer method to obtain a silicon substrate with two-dimensional niobium triselenide nanoribbons on its surface.
[0060] Photoresist was drop-coated onto a silicon substrate containing two-dimensional niobium triselenide nanoribbons. The photoresist was then uniformly spin-coated onto the silicon substrate using a spin coater. Electrodes were fabricated at both ends of the two-dimensional niobium triselenide nanoribbons using a laser direct writing device (the two electrodes were parallel to and perpendicular to the nanoribbon direction, respectively). A 10 nm thick Bi electrode and a 50 nm thick Au electrode were then deposited using a high-vacuum electron beam evaporation deposition machine. The substrate was then placed in dimethyl sulfoxide (DMSO) for photoresist removal. Finally, the substrate was immersed in a butyllithium solution (containing 15 wt% butyllithium and 85 wt% hexane) for 2 hours to allow lithium ions to intercalate into the material, resulting in the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons.
[0061] Example 3
[0062] Mix 250 mg of Nb powder and 655 mg of Se powder evenly at a molar ratio of 1:3, add 40 mg of elemental iodine, place the resulting mixed powder at the bottom of a quartz tube, then place a mica sheet in the tube, seal the tube using an oxyhydrogen flame sealing machine, place the quartz tube in a tube furnace, raise the temperature from room temperature to 650°C for 230 min, hold for 800 min, and then lower the temperature to room temperature for 360 min. Use a wet transfer method to transfer the obtained two-dimensional niobium triselenide nanoribbons (56 μm long, 6 μm wide, and 102 nm thick) onto a silicon substrate to obtain a silicon substrate with two-dimensional niobium triselenide nanoribbons on its surface.
[0063] Photoresist was drop-coated onto a silicon substrate containing two-dimensional niobium triselenide nanoribbons. The photoresist was then uniformly spin-coated onto the silicon substrate using a spin coater. Electrodes (parallel to the nanoribbon direction) were fabricated at both ends of the two-dimensional niobium triselenide nanoribbons using a laser direct writing device. A 5nm thick Ti electrode and a 30nm thick Au electrode were then deposited using a high-vacuum electron beam evaporation deposition machine. The substrate was then placed in dimethyl sulfoxide (DMSO) for photoresist removal. Finally, the substrate was immersed in a lithium n-butyl solution (containing 15wt% lithium n-butyl and 85wt% hexane) for 2 hours to allow lithium ions to intercalate into the material, resulting in the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons.
[0064] Test case
[0065] Test Example 1: Electrical tests were conducted on the device before and after immersion in a n-butyllithium solution to compare the changes in the device's electrical behavior before and after lithiation.
[0066] The storage behavior of the resistive random access memory (RAM) device based on two-dimensional niobium triselenide nanoribbons described in Example 1 was tested using a probe station and a 4200 semiconductor: The RAM device was placed in a probe station and tested under a vacuum environment at room temperature with a vacuum degree of 10.-5 Scale, test results as follows Figure 2 and Figure 3 As shown, Figure 2 The image shows the high and low resistance switching of the device before and after lithiation under the voltage mechanism (IV diagram), where the left image is the device before lithiation and the right image is the device after lithiation; Figure 2 It can be seen that the device can achieve good storage behavior through lithiation; Figure 3 The images shown are high-resistance switching images (IV images) of the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons obtained after lithiation in Example 1 under different limiting currents (10 μA and 50 μA). Figure 3 It is known that we can achieve multi-level storage behavior of devices by modulating the limiting current; combined with Figures 2-3 It is known that the current in the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons suddenly increases to the applied limiting current when it reaches a certain intermediate voltage value, and the device transitions from a high-resistance state to a low-resistance state. Under a negative scan voltage, the device current transitions from low resistance to high resistance when it reaches a certain voltage value. Electrical tests have demonstrated that this reversible switching behavior between high and low resistance can be achieved by adjusting the voltage. Furthermore, we realize multi-level storage of the device by controlling the limiting current.
[0067] The withstand capability test of the resistive switching random access memory (RSM) device based on two-dimensional niobium triselenide nanoribbons was conducted by continuously applying voltage stimuli to the device. During the test, statistical analysis was performed on the high and low resistance switching voltage, and calculations showed that the device maintained a low level of fluctuation throughout the test, achieving good high and low resistance switching behavior (e.g., ...). Figure 4 (as shown);
[0068] The multi-level storage performance test of the resistive random access memory (RAM) device based on two-dimensional niobium triselenide nanoribbons was conducted by adjusting the device's conductance at different levels to achieve multi-level storage functionality. The tests demonstrated that the device exhibits good storage behavior under various limiting currents (e.g., ...). Figure 3 (as shown);
[0069] The anisotropy test of the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons: whereby... Figure 5 The IV diagram is shown for the resistive random access memory device (perpendicular to the nanoribbon direction) based on two-dimensional niobium triselenide nanoribbons described in Example 1. Figure 5 It can be seen that when the current direction is perpendicular to the nanoribbon, the device cannot achieve storage behavior; in contrast... Figure 2 and Figure 5It is evident that the electrical behavior of the resistive random access memory (RAM) device based on two-dimensional niobium triselenide nanoribbons varies significantly in different directions. When the electrodes are positioned perpendicular to the nanoribbon, the device cannot achieve reversible high-to-low resistance switching. However, along the nanoribbon direction, the device exhibits better uniformity and retention performance in its storage behavior. Tests demonstrate the differences in the device's electrical behavior along different axes, revealing that the material itself exhibits significant anisotropy.
[0070] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A method for fabricating a resistive random access memory device based on two-dimensional niobium triselenide nanoribbons, characterized in that, Includes the following steps: Two-dimensional niobium triselenide nanoribbons were prepared on the surface of a silicon substrate to obtain a silicon substrate with two-dimensional niobium triselenide nanoribbons on the surface. After coating the surface of the silicon substrate containing two-dimensional niobium triselenide nanoribbons with photoresist, electrode sites are etched at both ends of the two-dimensional niobium triselenide nanoribbons to prepare electrodes. After removing the photoresist, lithiation is performed to obtain the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons. The lithiation process is as follows: soaking in a n-butyllithium solution containing 15 wt% n-butyllithium and 85 wt% n-hexane at room temperature for 2 hours.
2. The preparation method according to claim 1, characterized in that, The raw materials for preparing the two-dimensional niobium triselenide nanoribbons include niobium powder, selenium powder, and a transport agent; The transport agent is elemental iodine.
3. The preparation method according to claim 2, characterized in that, The mass ratio of niobium powder, selenium powder and transport agent is 250:648:(30~40).
4. The preparation method according to any one of claims 1 to 3, characterized in that, The procedure for preparing the two-dimensional niobium triselenide nanoribbons includes: heating from room temperature to 650~700℃, holding at that temperature for 600~700 min, and then cooling back to room temperature.
5. The preparation method according to claim 4, characterized in that, The heating rate is 2.8~3℃ / min; The cooling rate is 1.8~2℃ / min.
6. The preparation method according to claim 1, characterized in that, The electrode extends in a direction parallel to or perpendicular to the two-dimensional niobium triselenide nanoribbon.
7. The preparation method according to claim 1 or 6, characterized in that, The electrodes fabricated at both ends of the two-dimensional niobium triselenide nanoribbon are titanium electrodes and gold electrodes stacked sequentially; or Bi electrodes and Au electrodes stacked sequentially.
8. The preparation method according to claim 1, characterized in that, The degumming process involves using a degumming solvent, specifically dimethyl sulfoxide.
9. The resistive random access memory device based on two-dimensional niobium triselenide nanoribbons prepared by the preparation method according to any one of claims 1 to 8, comprising a silicon substrate and two-dimensional niobium triselenide nanoribbons disposed on the surface of the silicon substrate; It also includes electrodes mounted at both ends of the two-dimensional niobium triselenide nanoribbon.
10. The application of the resistive random access memory device based on two-dimensional niobium triselenide nanoribbons as described in claim 9 in the field of non-volatile memory.