Devices incorporating IR signal transmission areas

Abstract

A semiconductor device is disclosed having a plurality of layers deposited on a substrate and extending in at least one lateral orientation defined by its lateral axis. The semiconductor device includes: at least one EM radiation absorbing layer deposited on a first layer surface and comprising at least one discontinuous layer with a granular structure comprising a deposited material. The at least one granular structure of the at least one EM radiation absorbing layer facilitates the absorption of EM radiation in at least a portion of at least one of the visible and UV spectra, while substantially allowing the transmission of EM radiation in at least a portion of at least one of the IR and NIR spectra.

Description

[0001] Related patent applications

[0002] This application claims priority to the following applications: U.S. Provisional Patent Application No. 63 / 081,707, filed September 22, 2020; U.S. Provisional Patent Application No. 63 / 107,393, filed October 29, 2020; U.S. Provisional Patent Application No. 63 / 122,421, filed December 7, 2020; U.S. Provisional Patent Application No. 63 / 141,857, filed January 26, 2021; U.S. Provisional Patent Application No. 63 / 153,834, filed February 25, 2021; U.S. Provisional Patent Application No. 63 / 158,185, filed March 8, 2021; U.S. Provisional Patent Application No. 63 / 163,453, filed March 19, 2021; and U.S. Provisional Patent Application No. 63 / 163,453, filed April 28, 2021. 63 / 181,100, the contents of each of them are incorporated into this paper in full by reference. Technical Field

[0003] This disclosure relates to layered semiconductor devices, and more particularly to an optoelectronic device having a first electrode and a second electrode separated by a semiconductor layer and having a conductive deposition material deposited thereon, the conductive deposition material being patterned using a patterned coating that can act as and / or as a nucleation inhibition coating (NIC) and / or such NIC. Background Technology

[0004] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductive layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, which migrate toward each other through the at least one semiconductive layer. When a pair of holes and electrons combine, photons can be emitted.

[0005] OLED display panels can include multiple (sub)pixels, each with an associated pair of electrodes. The various layers and coatings of such panels are typically formed by vacuum-based deposition processes.

[0006] In some applications, there may be an objective to provide a patterned conductive and / or electrode coating for each (sub)pixel of the panel in either or both of the lateral and cross-sectional orientations of the panel during the OLED manufacturing process by selectively depositing at least one thin film of a conductive coating to form device features, such as, but not limited to, electrodes and / or conductive elements electrically coupled thereto.

[0007] In some applications, there may be a goal of making the device substantially transparent while still being able to emit light from it. In some applications, the device includes multiple signal transmission regions arranged between multiple light-emitting regions or sub-pixels. Since the light-emitting regions typically include layers, coatings, and / or components that attenuate or suppress the transmission of external light through such regions, the signal transmission regions are typically located in the non-emitting regions of the display panel, where the presence of such layers, coatings, and / or components that attenuate or suppress the transmission of external light can be omitted.

[0008] In some non-limiting applications, one approach to this involves inserting a fine metal mask (FMM) (including conductive elements as electrodes and / or electrically coupled thereto) and / or an EM radiation absorbing layer during the deposition of the deposited material. However, such deposited materials typically have relatively high evaporation temperatures, which affects the ability to reuse the FMM and / or the accuracy of the achievable patterns, and is accompanied by increased cost, effort, and complexity.

[0009] In some non-limiting examples, one approach to doing this involves depositing electrode material and then removing (including via laser drilling) the unwanted areas to form a pattern. However, the removal process typically involves the generation and / or presence of debris, which can affect the yield of the manufacturing process.

[0010] Furthermore, such methods may not be suitable for some applications and / or some devices with certain morphological characteristics.

[0011] In some non-limiting applications, there may be an objective to increase photon transmission and / or decrease photon absorption in order to provide an improved mechanism for the optical path passing through at least a portion of the device in at least one wavelength subrange of the electromagnetic (EM) spectrum, including but not limited to providing such a path by providing selective deposition of a deposition material.

[0012] In some non-limiting applications, there may be a goal of providing a mechanism for depositing thin, dispersed layers of metallic NPs in optoelectronic devices, which may affect the device’s performance in terms of optical properties, performance, stability, reliability, and / or lifetime. Attached Figure Description

[0013] Examples of this disclosure will now be described with reference to the following figures, wherein the same reference numerals in different figures indicate the same elements and / or similar and / or corresponding elements in some non-limiting examples, and wherein:

[0014] Figure 1This is a simplified block diagram of an exemplary device viewed in cross-section according to an example in this disclosure, the exemplary device having multiple layers in a lateral orientation, including a discontinuous layer of particulate structure on the exposed surface of the device, the device including an EM radiation absorbing layer;

[0015] Figure 2 This is a simplified block diagram based on the examples in this disclosure, showing an additional optional layer. Figure 1 Device type;

[0016] Figures 3A-3E This is a SEM micrograph of a sample manufactured in the example of this disclosure;

[0017] Figure 3F Based on Figures 3A-3E Analysis of microscopic images; plotting histograms of particle structure distribution.

[0018] Figure 3G-Figure 3J This is a SEM micrograph of a sample manufactured in the example of this disclosure;

[0019] Figure 3K Based on Figure 3G-Figure 3J Analysis of microscopic images; plotting histograms of particle structure distribution.

[0020] Figure 3L-Figure 3O This is a SEM micrograph of a sample manufactured in the example of this disclosure;

[0021] Figure 4A This is a schematic diagram illustrating an example according to this disclosure, showing a close proximity. Figure 1 The emission area of ​​the device Figure 1 An EM radiation absorbing layer is formed by depositing a patterned coating after depositing multiple seed crystals for forming a granular structure.

[0022] Figure 4B This illustrates an example according to this disclosure. Figure 4A A schematic diagram of an EM radiation absorbing layer, which is formed by depositing a patterned coating before depositing multiple seed crystals;

[0023] Figure 5 This is a schematic diagram illustrating an example cross-sectional view of an exemplary user device having a display panel according to an example in this disclosure, the display panel having multiple layers and including at least one hole;

[0024] Figure 6A This illustrates an example according to this disclosure. Figure 5 A schematic diagram of the use of user equipment, wherein at least one aperture is represented by at least one signal transmission area to exchange EM radiation in the IR and / or NIR spectrum for the purpose of user biometric authentication;

[0025] Figure 6B Based on the examples in this disclosure Figure 5 A floor plan of a user equipment, which includes a display panel;

[0026] Figure 6C It shows along Figure 6B The device shown is a cross-sectional view taken along line 6C-6C.

[0027] Figure 6D Based on the examples in this disclosure Figure 5 A floor plan of a user equipment, which includes a display panel;

[0028] Figure 6E It shows along Figure 6D The sectional view of the device shown is taken along line 6E-6E.

[0029] Figure 6F Based on the examples in this disclosure Figure 5 A floor plan of a user equipment, which includes a display panel;

[0030] Figure 6G It shows along Figure 6F The device shown is a cross-sectional view taken along line 6G-6G.

[0031] Figure 6H An enlarged plan view of a portion of a panel according to an example in this disclosure is shown;

[0032] Figures 7A-7C This is a simplified block diagram of various examples of exemplary user equipment according to the examples in this disclosure, viewed from a cross-sectional orientation, the user equipment having a display panel for covering the body and at least one under-display component housed therein, the at least one under-display component for exchanging EM signals passing through therein at an angle to a layer of the display panel;

[0033] Figures 8A-8E Each of the above shows multiple SEM images of exemplary samples according to examples in this disclosure, and a distribution map of multiple particles of various feature sizes therein;

[0034] Figures 9A-9B This is a SEM micrograph of a sample manufactured in the example of this disclosure;

[0035] Figure 9C Based on Figures 9A-9B The average diameter chart of the microscopic images;

[0036] Figure 10This is a simplified block diagram of an exemplary device according to an example in this disclosure, viewed in cross-section, having multiple layers in a lateral orientation, which are formed by selectively depositing a patterned coating in a first portion of the lateral orientation and subsequently depositing a closed coating of deposited material in a second portion thereof;

[0037] Figure 11 This is a schematic diagram illustrating an exemplary process according to an example in this disclosure, the process being used in... Figure 10 In an exemplary type of device, a patterned coating is deposited on the exposed surface of the lower layer in a certain pattern;

[0038] Figure 12 It is shown that it is used in including Figure 10 A schematic diagram of an exemplary process of depositing deposition material in a second portion of the exposed layer surface of a patterned coating, wherein the patterned coating is a nucleation inhibition coating (NIC);

[0039] Figure 13A It is shown in sectional view Figure 10 A schematic diagram of an exemplary type of the device;

[0040] Figure 13B This is shown in the supplementary floor plan. Figure 13A Schematic diagram of the device;

[0041] Figure 13C It is shown in sectional view Figure 10 A schematic diagram of an exemplary type of the device;

[0042] Figure 13D This is shown in the supplementary floor plan. Figure 13C Schematic diagram of the device;

[0043] Figure 13E It is shown in sectional view Figure 10 A schematic diagram of an example device;

[0044] Figure 13F It is shown in sectional view Figure 10 A schematic diagram of an example device;

[0045] Figure 13G It is shown in sectional view Figure 10 A schematic diagram of an example device;

[0046] Figures 14A-14I This is a schematic diagram illustrating various potential behaviors of a patterned coating according to various examples of the present disclosure, the patterned coating being located in Figure 10 The deposition interface with the deposited layer in an exemplary type of device;

[0047] Figure 15 This is a block diagram of an exemplary electroluminescent device as shown in cross-section according to the examples in this disclosure;

[0048] Figure 16 yes Figure 15 A cross-sectional view of the device;

[0049] Figure 17 This is a schematic diagram of an example according to the present disclosure, showing in a plan view an application... Figure 18 An exemplary patterned electrode of one type of device;

[0050] Figure 18 It is shown Figure 17 A schematic diagram of an exemplary cross-sectional view of the device taken along line 18-18;

[0051] Figure 19A This is a schematic diagram of an example according to the present disclosure, showing in a plan view an application... Figure 15 Multiple exemplary electrode patterns of exemplary types of the device;

[0052] Figure 19B It is shown Figure 19A A schematic diagram of an exemplary cross-sectional view of the device taken along line 19B-19B at an intermediate stage;

[0053] Figure 19C It is shown Figure 19A A schematic diagram of an exemplary cross-sectional view of the device taken along line 19C-19C;

[0054] Figure 20 This illustrates an example according to this disclosure. Figure 15 A schematic diagram of a cross-sectional view of an exemplary type of device having an exemplary patterned auxiliary electrode;

[0055] Figure 21 This is a schematic diagram illustrating, in plan view, an exemplary pattern of an auxiliary electrode covering at least one emitting region and at least one non-emitting region, according to examples in this disclosure;

[0056] Figure 22A It is illustrated in plan view according to the examples in this disclosure. Figure 15 A schematic diagram of an exemplary pattern of an exemplary type of device, the exemplary pattern having a plurality of emission regions in a diamond configuration;

[0057] Figure 22B It is shown Figure 22A A schematic diagram of an exemplary cross-sectional view of the device taken along line 22B-22B;

[0058] Figure 22C It is shown Figure 22A A schematic diagram of an exemplary cross-sectional view of the device taken along line 22C-22C;

[0059] Figure 23This illustrates an example according to this disclosure. Figure 16 A schematic diagram of an example cross-sectional view of an exemplary type of device, which has additional exemplary deposition steps;

[0060] Figure 24 This illustrates an example according to this disclosure. Figure 16 A schematic diagram of an example cross-sectional view of an exemplary type of device, which has additional exemplary deposition steps;

[0061] Figure 25 This illustrates an example according to this disclosure. Figure 16 A schematic diagram of an example cross-sectional view of an exemplary type of device, which has additional exemplary deposition steps;

[0062] Figure 26 This illustrates an example according to this disclosure. Figure 16 A schematic diagram of an example cross-sectional view of an exemplary type of device, which has additional exemplary deposition steps;

[0063] Figure 27A It is illustrated in plan view according to the examples in this disclosure. Figure 15 A schematic diagram of an example of a transparent type of device, the transparent type including at least one exemplary pixel region and at least one exemplary signal transmission region, having at least one auxiliary electrode;

[0064] Figure 27B It is shown Figure 27A A schematic diagram of an exemplary cross-sectional view of the device taken along line 27B-27B;

[0065] Figure 28A It is illustrated in plan view according to the examples in this disclosure. Figure 15 A schematic diagram illustrating an example of a transparent type of device, the transparent type including at least one exemplary pixel region and at least one exemplary signal transmission region;

[0066] Figure 28B It is shown Figure 28A A schematic diagram of an exemplary cross-sectional view of the device taken along line 28-28;

[0067] Figure 28C It is shown Figure 28A A schematic diagram of an exemplary cross-sectional view of the device taken along line 28-28;

[0068] Figure 29 It can be shown that the example in this disclosure is for manufacturing Figure 16 A schematic diagram of an exemplary stage of an exemplary process of an exemplary type of device, the exemplary type having sub-pixel regions having a second electrode of another thickness;

[0069] Figure 30 This illustrates an example according to this disclosure. Figure 15 A schematic diagram of an exemplary cross-sectional view of an exemplary type of device, wherein the second electrode is coupled to the auxiliary electrode;

[0070] Figure 31 This illustrates an example according to this disclosure. Figure 15 A schematic diagram of an exemplary cross-sectional view of an exemplary type of device, which has separators and shielding areas, such as recesses, in its non-emitting region;

[0071] Figures 32A-32B This illustrates various examples according to this disclosure. Figure 15 A schematic diagram of an exemplary cross-sectional view of an exemplary type of device, which has separators and shielding areas, such as holes, in a non-emitting region;

[0072] Figures 33A-33C This is a schematic diagram illustrating an exemplary stage of an exemplary process according to an example in this disclosure, the exemplary process being used to selectively deposit and subsequently remove [materials]. Figure 15 An exemplary type of device has a patterned deposition layer deposited on the exposed surface;

[0073] Figure 34 This illustrates an exemplary energy distribution of the relative energy states of surface-adsorbed atoms adsorbed onto a surface according to an example in this disclosure;

[0074] Figure 35 This is a schematic diagram illustrating the formation of a membrane core according to an example in this disclosure; and

[0075] Figure 36 It is a graph showing the functional relationship between photoluminescence intensity and the wavelength of various experimental samples.

[0076] In this disclosure, an icon symbol appended with at least one numerical value (including, but not limited to, appended in a subscript) and / or a lowercase letter character (including, but not limited to, in lowercase form) can be considered to refer to a specific instance and / or subset of the element or feature described by that icon symbol. As indicated by the context, indexing an icon symbol without indexing the appended value and / or character can generally refer to the element or feature described by that icon symbol, and / or the set of all instances described therein. Similarly, an icon symbol may use the letter "x" to replace a number. As indicated by the context, indexing such an icon symbol can generally refer to the element or feature described by that icon symbol (where the character "x" is replaced by a number), and / or the set of all instances described therein.

[0077] In this disclosure, specific details are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the disclosure. These details include, but are not limited to, specific architectures, interfaces, and / or technologies. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications have been omitted so as not to obscure the description of the invention with unnecessary detail.

[0078] Furthermore, it should be understood that the block diagrams reproduced herein may represent conceptual views of exemplary components embodying the principles of this technology.

[0079] Therefore, system and method components have been appropriately indicated in the accompanying drawings using conventional symbols, with only those specific details shown that are relevant to understanding the examples of this disclosure, so that this disclosure will not be obscured by details that are obvious to those skilled in the art who will benefit from the description herein.

[0080] Any of the accompanying drawings provided herein may not be drawn to scale and may not be considered as limiting this disclosure in any way.

[0081] In some examples, any feature or action shown in dashed outlines may be considered optional. Summary of the Invention

[0082] The purpose of this invention is to eliminate or mitigate at least one of the disadvantages of the prior art.

[0083] The purpose of this invention is to eliminate or mitigate at least one of the disadvantages of the prior art.

[0084] This invention discloses a semiconductor device having multiple layers deposited on a substrate and extending in at least one lateral orientation defined by its lateral axis. The device includes at least one EM radiation absorbing layer deposited on a first layer surface and comprising at least one discontinuous layer with a granular structure comprising a deposited material. The at least one granular structure of the at least one EM radiation absorbing layer facilitates the absorption of EM radiation in at least a portion of at least one of the visible and ultraviolet (UV) spectra, while substantially allowing the transmission of EM radiation in at least a portion of at least one of the IR and NIR spectra.

[0085] According to a general aspect, a semiconductor device is disclosed having a plurality of layers deposited on a substrate and extending in at least one lateral orientation defined by its lateral axis. The semiconductor device includes: at least one electromagnetic (EM) radiation absorbing layer, the at least one EM radiation absorbing layer being deposited on a first layer surface and including at least one discontinuous layer with a particulate structure comprising a deposited material; wherein the at least one particulate structure of the at least one EM radiation absorbing layer facilitates absorption of EM radiation in at least a portion of at least one of the visible spectrum and ultraviolet (UV) spectrum, while substantially allowing transmission of EM radiation in at least a portion of at least one of the infrared (IR) spectrum and near-infrared (NIR) spectrum.

[0086] In some non-limiting examples, the deposited material may be a metal. In some non-limiting examples, the deposited material may contain at least one of magnesium, silver, and / or ytterbium. In some non-limiting examples, the deposited material may be co-deposited with a co-deposited dielectric material.

[0087] In some non-limiting examples, the at least one particle may have characteristics selected from at least one of the following: size, size distribution, shape, surface coverage, texture, deposition density, and composition. In some non-limiting examples, the at least one particle structure may have a percentage coverage of at least one of about 10%-50%, 10%-45%, 12%-40%, 15%-40%, 15%-35%, 18%-35%, 20%-35%, and 20%-30%. In some non-limiting examples, a majority of the at least one particle structure may have a maximum feature size not greater than at least one of about 40 nm, 35 nm, 30 nm, 25 nm, and 20 nm. In some non-limiting examples, the at least one particle structure may have a characteristic size that is at least one of the average and median values ​​among at least one of the following: about 5 nm-40 nm, 5 nm-30 nm, 8 nm-30 nm, 10 nm-30 nm, 8 nm-25 nm, 10 nm-25 nm, 8 nm-20 nm, 10 nm-20 nm, 10 nm-15 nm, and 8 nm-15 nm. In some non-limiting examples, the at least one particle structure may include a seed crystal around which the deposited material tends to aggregate.

[0088] In some non-limiting examples, the device may further include a patterned coating disposed on the second layer surface, wherein: the first layer surface is the exposed layer surface of the patterned coating; the initial adhesion probability for deposition of the deposited material on the surface of the patterned coating is significantly less than at least one of: 0.3 and the initial adhesion probability for deposition of the deposited material on the second layer surface, such that the patterned coating is substantially free of a sealing layer of deposited material. In some non-limiting examples, the patterned coating may include at least one patterned material. In some non-limiting examples, the patterned coating may include a first patterned material having a first initial adhesion probability for deposition of the deposited material and a second patterned material having a second initial adhesion probability for deposition of the deposited material, wherein the first initial adhesion probability is substantially less than the second initial adhesion probability. In some non-limiting examples, the first patterned material may be a nucleation inhibition coating (NIC) material, and the second patterned material is selected from at least one of electron transport layer (ETL) materials, Liq, and lithium fluoride (LiF).

[0089] In some non-limiting examples, these layers may extend within the at least one laterally oriented first and second portions, with the at least one EM radiation absorbing layer extending across the first portion, and the device is adapted to allow at least one EM signal to pass through the first portion at an angle relative to the layers. In some non-limiting examples, the at least one EM signal may have a wavelength range within at least a portion of at least one of an IR spectrum and a NIR spectrum. In some non-limiting examples, the first portion may be substantially free of a sealing coating of deposited material. In some non-limiting examples, the first portion may correspond to at least a portion of the signal transmission region.

[0090] In some non-limiting examples, the device may be adapted to receive the at least one EM signal passing through it for exchange with at least one under-display component. In some non-limiting examples, the at least one under-display component may include at least one of: a receiver adapted to receive; and a transmitter adapted to transmit the at least one EM signal passing through the device. In some non-limiting examples, the receiver may be an IR detector and the transmitter may be an IR transmitter. In some non-limiting examples, the transmitter may transmit a first EM signal, and the receiver may detect a second EM signal as a reflection of the first EM signal. In some non-limiting examples, the exchange of the first EM signal and the second EM signal may provide biometric authentication for a user.

[0091] In some non-limiting examples, the device may form a display panel for a user device that surrounds components below the display.

[0092] In some non-limiting examples, the second part may include at least one emitting region for emitting the at least one EM signal at an angle relative to the layers. In some non-limiting examples, the device may also include at least one semiconductive layer disposed on one of its layers, wherein: each emitting region includes a first electrode and a second electrode, the first electrode being disposed between the substrate and the at least one semiconductive layer, and the at least one semiconductive layer being disposed between the first electrode and the second electrode.

[0093] In some non-limiting examples, the device may also include at least one sealing coating of the deposited material on the surface of the exposed layer in the second portion. In some non-limiting examples, the second electrode may include the at least one sealing coating of the deposited material. Detailed Implementation

[0094] Layered devices

[0095] This disclosure relates generally to layered semiconductor devices, and more specifically to optoelectronic devices. Optoelectronic devices can generally encompass any device that converts electrical signals into photons and vice versa. In some non-limiting examples, the layered semiconductor device (including, but not limited to, optoelectronic devices) can be used as a surface of a user equipment (including, but not limited to, a display panel).

[0096] Those skilled in the art will understand that although this disclosure relates to optoelectronic devices, its principles can be applied to any panel having multiple layers, including but not limited to at least one layer of conductive deposited material 1231. Figure 12 The layers are included as thin films, and in some non-limiting examples, electromagnetic (EM) signals can pass through the conductive deposited material of the layer at an angle relative to the plane of at least one of these layers, either completely or partially.

[0097] Now go to Figure 1 The figure shows a cross-sectional view of an exemplary layered device 100. In some non-limiting examples, such as Figure 15 As shown in more detail below, device 100 may include multiple layers deposited on substrate 10, including but not limited to a first layer 110.

[0098] A lateral axis, designated as the X-axis, may be shown together with a longitudinal axis, designated as the Z-axis. A second lateral axis, designated as the Y-axis, may be shown substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may define the lateral orientation of the device 100. Some of the accompanying drawings may be shown in plan view. In such plan view, a pair of lateral axes, designated as the X-axis and Y-axis respectively, are shown, and in some examples, this pair of lateral axes may be substantially transverse to each other. At least one of these lateral axes may define the lateral orientation of the device 100.

[0099] The layer of device 100 may extend in a lateral orientation substantially parallel to the plane defined by the lateral axis. Those skilled in the art will understand that, in some non-limiting examples, Figure 1 The representation of a substantially flat surface shown may be an abstract concept for illustrative purposes. In some non-limiting examples, there may be localized substantially flat layers of varying thicknesses and sizes in the lateral extent of device 100, and in some non-limiting examples, layers that are substantially absent and / or separated by uneven transition regions (including lateral gaps and even interruptions).

[0100] Therefore, although for the sake of illustration, device 100 may be shown as a substantially layered structure of substantially parallel planar layers in its cross-sectional orientation, such device may locally show different morphologies to define features, each of which may substantially exhibit the layered profile in the cross-sectional orientation.

[0101] EM radiation absorption

[0102] Nanoparticles (NPs) are particulate structures of matter121 whose main characteristic size is on the nanometer (nm) scale, generally understood to be between approximately 1 nm and 300 nm. At the nanoscale, a given material’s NPs can possess unique properties (including but not limited to optical, chemical, physical, and / or electrical properties) relative to the same material in bulk form.

[0103] When multiple NPs are formed as a single layer in a layered semiconductor device (including but not limited to optoelectronic devices), these properties can be used to improve its performance.

[0104] Existing mechanisms for introducing such NP layers into devices have some drawbacks.

[0105] First, typically, such NPs are formed as a tightly packed layer of the device and / or dispersed within its matrix material. Therefore, the thickness of this NP layer can often be much greater than the feature size of the NP itself. This thickness of the NP layer can impart undesirable characteristics in terms of device performance, device stability, device reliability, and / or device lifetime, which can reduce or even eliminate any known advantages provided by the unique properties of the NP.

[0106] Second, the techniques for synthesizing NPs in such devices and using them in such devices can introduce large amounts of carbon (C), oxygen (O) and / or sulfur (S) through various mechanisms.

[0107] As a non-limiting example, wet chemical methods are often used to introduce NPs with precisely controlled characteristic dimensions, size distribution, shape, surface coverage, construction, and / or deposition density into devices. However, such methods typically employ organic end-capping groups (such as in the synthesis of citrate-terminated silver (Ag) NPs) to stabilize the NPs, but these organic end-capping groups introduce C, O, and / or S into the synthesized NPs.

[0108] Furthermore, since a solvent is used in the deposition, the NP layer deposited from this solution can typically contain C, O and / or S.

[0109] In addition, these elements may be introduced as contaminants during wet chemical processes and / or the deposition of NP layers.

[0110] Regardless of the introduction, the presence of large amounts of C, O and / or S in the NP layer of such a device may impair its performance, stability, reliability and / or lifetime.

[0111] Third, when depositing NP layers from solution, as the solvent used dries, the NP layer tends to exhibit non-uniform properties across the entire NP layer and / or between different patterned regions of such a layer. In some non-limiting examples, the edges of a given NP layer may be significantly thicker or thinner than the interior regions of such an NP layer, and this difference can adversely affect device performance, stability, reliability, and / or lifetime.

[0112] Fourth, although other methods and / or processes exist for synthesizing and / or depositing NPs besides wet chemical synthesis and solution deposition, including but not limited to vacuum-based methods such as, but not limited to, PVD, existing methods tend to provide poor control over the characteristic size, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion of the deposited NPs. As a non-limiting example, in conventional PVD processes, NPs tend to form a tightly packed film as their size increases. Therefore, methods such as conventional PVD are generally not well-suited for forming NP layers with large dispersions of NPs and low surface coverage. Conversely, the poor control over the characteristic size, size distribution, shape, surface coverage, texture, and / or deposition density imparted by such conventional methods can lead to poor device performance, stability, reliability, and / or lifetime.

[0113] EM radiation absorbing coatings utilize plasmonic photonics, a branch of nanophotonics, which studies the resonant interaction between EM radiation and metals. Those skilled in the art will understand that metallic NPs can exhibit coherent oscillations of LSP excitation and / or free electrons, and their optical response can be tailored by altering the characteristic size, size distribution, shape, surface coverage, texture, deposition density, and / or composition of the nanostructure. Such an optical response for EM radiation absorbing coatings can include the absorption of EM radiation incident thereon, thereby reducing the reflection of EM radiation.

[0114] Turn to Figure 1 In some non-limiting examples, the EM radiation absorbing (NP) layer 120 may be used as part of the layered semiconductor device 100 to absorb EM radiation incident thereon, or to reduce reflections of the device 100.

[0115] In some non-limiting examples, the EM radiation absorbing layer 120 may be deposited on and / or on the exposed layer surface 11, including but not limited to the underlying layer (such as, but not limited to, the first layer 110).

[0116] In some non-limiting examples, the EM radiation absorbing layer 120 may be formed by depositing discrete metal particle structures 121, including as a discontinuous layer 130. In some non-limiting examples, the discontinuous layer may include NPs having given characteristic dimensions, size distribution, shape, surface coverage, structure, deposition density and / or composition.

[0117] In some non-limiting examples, the particulate structure 121 constituting the EM radiation absorbing layer 120 may be and / or include discrete metallic plasmon islands or clusters.

[0118] Those skilled in the art will understand that, regarding the mechanism of the deposited material, due to the potential stacking and / or aggregation of monomers and / or atoms, the actual size, height, weight, thickness, shape, profile, and / or spacing of the particulate structures 121 in the EM radiation absorbing layer 120 may be substantially non-uniform in some non-limiting examples. Furthermore, although the particulate structures 121 in the EM radiation absorbing layer 120 are shown to have a given profile, this is merely illustrative and not a limitation on any size, height, weight, thickness, shape, profile, and / or spacing of such particulate structures 121.

[0119] In some non-limiting examples, the absorption may be focused within a certain range of the absorption spectrum of the EM spectrum, including but not limited to the visible spectrum and / or its sub-ranges. In some non-limiting examples, employing the EM radiation absorption layer 120 as part of the layered optoelectronic device 100 can reduce dependence on the polarizer therein.

[0120] Those skilled in the art will understand that, in some non-limiting examples, multiple EM radiation absorbing layers 120 may be disposed on top of each other, regardless of whether they are separated by additional layers, thus having varying orientations and different absorption spectra. In this way, the absorption of certain regions of the device can be tuned according to one or more absorption spectra.

[0121] Although the EM radiation absorbing layer 120 can absorb EM radiation incident on it from outside the layered semiconductor device 100, thereby reducing reflection, those skilled in the art will understand that in some non-limiting examples, the EM radiation absorbing layer 120 can absorb EM radiation emitted by the device 100 that is incident on it.

[0122] In some non-limiting examples, such particulate structures 121 can be formed by depositing a small amount (in some non-limiting examples, having an average layer thickness of about a few angstroms or a fraction of an angstrom) of deposited material 1231 on the exposed surface 11 of the underlying layer (including but not limited to the first layer 110). In some non-limiting examples, the exposed surface 11 can be a nucleation-promoting coating (NPC) 1420. Figure 14C ).

[0123] Seed crystals

[0124] In some non-limiting examples, the size, height, weight, thickness, shape, profile, and / or spacing of the granular structures 121 in the EM radiation absorbing layer 120 can be more or less specified by depositing seed material as part of the EM radiation absorbing layer 120 at appropriate locations and / or at appropriate densities and / or deposition stages in the template layer. In some non-limiting examples, such seed material can act as seed crystals 122 or heterogeneous materials, serving as nucleation sites such that the deposited material 1231 may tend to aggregate around each seed crystal 122 to form granular structures 121.

[0125] In some non-limiting examples, the seed material may include a metal, including but not limited to ytterbium (Yb) or Ag. In some non-limiting examples, the seed material may have high wettability relative to the deposited material 1231 deposited thereon and aggregated thereon.

[0126] In some non-limiting examples, seed crystals 122 may be deposited in a template layer across the exposed layer surface 11 of device 100 using an open mask and / or maskless deposition process for seed crystal materials.

[0127] EM layer patterned coating

[0128] Now go to Figure 2The diagram illustrates a type 200 of device 100 having additional optional layers. In some non-limiting examples, to deposit the EM radiation absorbing layer 120, an EM layer patterned coating 210 may be selectively deposited across underlying layers (including, but not limited to, the first layer 110). e Specifically, in the patterned coating 210 that makes up the EM layer e Patterned materials 1111 Figure 11 A shadow mask 1115 is inserted between the exposed layer surface 11 and the exposed layer surface 11. Figure 11 (In some non-limiting examples, this could be a fine metal mask (FMM)).

[0129] Patterned coating 210 with selectively deposited EM layer e Subsequently, in some non-limiting examples, the deposition material 1231 may be deposited on the device 200 using an aperture mask and / or maskless deposition process as and / or to form the particulate structure 121 constituting the EM radiation absorbing layer 120, including but not limited to by a coating 210 not patterned by the EM layer. e The corresponding seed crystals 122 (if present) are aggregated to form the covering.

[0130] EM layer patterned coating 210 e A surface with a relatively low initial adhesion probability to the deposition of the deposited material 1231 can be provided, which can be significantly less than the initial adhesion probability of the exposed surface 11 of the lower layer of the device 200 to the deposition of the deposited material 1231.

[0131] Therefore, the exposed surface 11 of the lower layer may be substantially free of a sealing coating 1040 for depositing material 1231 to form particulate structure 121. Figure 10 ), including but not limited to, by means of a coating 210 not patterned by the EM layer e The covered seed crystals 122 aggregate to form this structure.

[0132] In this way, the EM layer patterned coating 210 e Selective deposition, including but not limited to the use of a shadow mask 1115, can be used to allow deposition of material 1231 to form granular structures 121, including but not limited to those formed by agglomeration around corresponding seed crystals 122.

[0133] In some non-limiting examples, the deposition material 1231 to be deposited on the exposed layer surface 11 of the device 200 may have dielectric constant properties. In some non-limiting examples, this dielectric constant property may be selected to promote and / or increase the absorption of EM radiation by the EM radiation absorption layer 120, which is typically or in some time-limited examples in the wavelength range of the EM spectrum (including but not limited to the visible spectrum) and / or its sub-ranges and / or wavelengths (including but not limited to those corresponding to a specific color).

[0134] In some non-limiting examples, the EM layer patterned coating 210 e It may include a patterned material 1111 exhibiting a relatively low initial adhesion probability relative to the seed material and / or deposited material 1231, such that this EM layer patterned coating 210 e The surface can be patterned (in some examples, relative to the non-EM layer coating 210) n The patterned material 1111 that may constitute the non-EM layer patterned coating exhibits an increased tendency to deposit the deposition material 1231 (and / or seed material) into a particulate structure 121, which is used to suppress the deposition of the sealing coating 1040 of the deposition material 1231, including for applications discussed herein other than forming the EM radiation absorbing layer 120.

[0135] In some non-limiting examples, the EM layer patterned coating 210 e It may include a variety of materials, wherein at least one of them is a patterned material 1111, including but not limited to patterned materials 1111 that exhibit such a relatively low initial adhesion probability relative to the deposited material 1231 and / or seed material, as discussed above.

[0136] In some non-limiting examples, the first material among the plurality of materials may be a patterned material 1111 having a first initial adhesion probability for the deposition of the deposited material 1231 and / or the seed material, and the second material among the plurality of materials may be a patterned material having a second initial adhesion probability for the deposition of the deposited material 1231 and / or the seed material, wherein the second initial adhesion probability exceeds the first initial adhesion probability.

[0137] In some non-restrictive examples, essentially the same conditions and parameters can be used to measure the first initial adhesion probability and the second initial adhesion probability.

[0138] In some non-limiting examples, a second material of the plurality of materials may be used to dope, cover, and / or supplement the first material of the plurality of materials, such that the second material may act as a seed or heterogeneous material, serving as a nucleation site for the deposited material 1231 and / or the seed material.

[0139] In some non-limiting examples, the second material among the multiple materials may include NPC 1420. In some non-limiting examples, the second material among the multiple materials may include organic materials (including, but not limited to, polycyclic aromatic compounds), and / or materials including non-metallic elements (including, but not limited to, O, S, nitrogen (N), or C, which may otherwise be considered source materials, contaminants in the equipment used for deposition, and / or the vacuum chamber environment). In some non-limiting examples, the second material among the multiple materials may be deposited as a single layer of a small fraction of its thickness to avoid forming its continuous coating 1040. Instead, the monomers of this material may tend to be spaced laterally to form discrete nucleation sites for depositing material 1231 and / or seed material.

[0140] A series of samples were manufactured to evaluate the EM layer patterned coating 210, which consists of a mixture of a first patterning material 11111 and a second patterning material 11112. e The suitability of the formed EM radiation absorbing layer 120. In all samples, the first patterning material 11111 is a nucleation inhibition coating (NIC) material, which has a substantially low initial adhesion probability to the deposition of Ag as the deposition material 1231. Three exemplary materials are used as the second patterning material 11112, namely ETL 1537 (…). Figure 15 Material Liq was evaluated, which tends to have a relatively high initial adhesion probability for Ag deposition as deposition material 1231, and is suitable as NPC 1420 and LiF in some non-limiting examples.

[0141] For the ETL 1537 material, multiple samples were prepared by co-depositing a first patterning material 11111 and the ETL 1537 material at different ratios on an indium tin oxide (ITO) substrate to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux of 1232 to a reference layer thickness of 15 nm.

[0142] Six samples were prepared, with volume % ratios of ETL 1537 material to the first patterning material 11111 of 1:99 (ETL sample A), 2:98 (ETL sample B), 5:95 (ETL sample C), 10:90 (ETL sample D), 20:80 (ETL sample E), and 40:60 (ETL sample F), respectively. In addition, two comparative samples were prepared, with volume % ratios of ETL 1537 material to the first patterning material 11111 of 0:100 (comparative sample 1) and 100:0 (comparative sample 2), respectively.

[0143] ETL sample B exhibits a total surface coverage of 15.156%, an average feature size of 13.6292 nm, a dispersion of 2.0462, a number-average particle diameter of 14.5399 nm, and a size-average particle diameter of 20.7989 nm.

[0144] ETL sample C exhibits a total surface coverage of 22.083%, an average feature size of 16.6985 nm, a dispersion of 1.6813, a number-average particle diameter of 17.8372 nm, and a size-average particle diameter of 23.1283 nm.

[0145] ETL sample D exhibits a total surface coverage of 27.0626%, an average feature size of 19.4518 nm, a dispersion of 1.5521, a number-average particle diameter of 20.7487 nm, and a size-average particle diameter of 25.8493 nm.

[0146] ETL sample E exhibits a total surface coverage of 35.5376%, an average feature size of 24.2092 nm, a dispersion of 1.6311, a number-average particle diameter of 25.858 nm, and a size-average particle diameter of 32.9858 nm.

[0147] Figures 3A-3E The images are SEM micrographs of comparative sample 1, ETL sample B, ETL sample C, ETL sample D, and ETL sample E, respectively.

[0148] Figure 3F It plots histograms of the particle structure 121 of ETL samples B 305, C 310, D 315 and E 320 as a function of the characteristic particle size, and the corresponding curves of the fitted histograms 306, 311, 316 and 321.

[0149] Table 1 below shows the percentage reduction in transmittance measured at various wavelengths for various samples.

[0150] Table 1

[0151]

[0152] It can be seen that the reduction in transmittance is minimal across most wavelengths when ETL 1537 is used as the second patterning material 11112 at a relatively low concentration. However, when the concentration of ETL 1537 exceeds approximately 5% by volume, a significant reduction (>10%) is observed at wavelengths of 450 nm and 550 nm in the visible spectrum, while no significant reduction in transmittance is observed at wavelengths of 700 nm in the IR spectrum and 850 nm in the NIR spectrum.

[0153] For Liq, multiple samples were prepared by co-depositing a first patterning material 11111 and Liq to an average layer thickness of 20 nm on an ITO substrate at different ratios, and then exposing the exposed layer surface 11 to a reference layer thickness of 1232 nm with an Ag vapor flux of 1232 nm.

[0154] Four samples were prepared, with the volume % ratios of Liq to the first patterning material 11111 being 2:98 (Liq sample A), 5:95 (Liq sample B), 10:90 (Liq sample C), and 20:80 (Liq sample D).

[0155] Liq sample A exhibits a total surface coverage of 11.1117%, an average feature size of 13.2735 nm, a dispersion of 1.651, a number-average particle size of 13.9619 nm, and a size-average particle size of 17.9398 nm.

[0156] Liq sample B exhibits a total surface coverage of 17.2616%, an average feature size of 15.2667 nm, a dispersion of 1.7914, a number-average particle size of 16.3933 nm, and a size-average particle size of 21.941 nm.

[0157] Liq sample C exhibits a total surface coverage of 32.2093%, an average feature size of 23.6209 nm, a dispersion of 1.6428, a number-average particle size of 25.3038 nm, and a size-average particle size of 32.4322 nm.

[0158] Figure 3G-Figure 3J These are SEM images of Liq samples A, B, C, and D, respectively.

[0159] Figure 3K It plots histograms of the particle structure 121 of LiQ sample B 325, LiQ sample A 330 and LiQ sample C 335 as a function of the particle size, and the corresponding curves of the fitted histograms 326, 331 and 336.

[0160] Table 2 below shows the percentage reduction in transmittance measured at various wavelengths for various samples.

[0161] Table 2

[0162]

[0163] It can be seen that the reduction in transmittance is minimal across most wavelengths when Liq is used as the second patterning material 11112 at relatively low concentrations. However, when the Liq concentration exceeds approximately 5 vol%, a significant reduction (>10%) is observed at wavelengths of 450 nm and 550 nm in the visible spectrum, while no significant reduction in transmittance is observed at wavelengths of 700 nm in the IR spectrum and 850 nm and 1,000 nm in the NIR spectrum.

[0164] For LiF, multiple samples were prepared by first depositing ETL material to an average layer thickness of 20 nm on an ITO substrate, then co-depositing a first patterned material 11111 and LiF to an average layer thickness of 20 nm at different ratios on the exposed layer surface 11 of ETL1537 material, and then exposing the exposed layer surface 11 to a reference layer thickness of 15 nm with an Ag vapor flux of 1232.

[0165] Four samples were prepared, with the volume % ratios of LiF to the first patterning material 11111 being 2:98 (LiF sample A), 5:95 (LiF sample B), 10:90 (LiF sample C), and 20:80 (LiF sample D).

[0166] Figure 3L-Figure 3O These are SEM images of LiF sample A, LiF sample B, LiF sample C, and LiF sample D, respectively.

[0167] Table 3 below shows the percentage reduction in transmittance measured at various wavelengths for various samples.

[0168] Table 3

[0169]

[0170] It can be seen that the reduction in transmittance is minimal across most wavelengths when LiF is used as the second patterning material at a relatively low concentration 11112. However, when the LiF concentration exceeds approximately 10 vol%, a significant reduction (8%) is observed at 450 nm in the visible spectrum, while no significant reduction in transmittance is observed at 700 nm in the IR spectrum and at 850 nm and 1,000 nm in the NIR spectrum.

[0171] Furthermore, for LiF concentrations up to 20% by volume, no reduction in transmittance was observed at wavelengths of 700 nm or greater.

[0172] Co-deposition with dielectric material

[0173] Although not shown, in some non-limiting examples, the particulate structure 121 that may constitute the EM radiation absorbing layer 120 may be formed without the use of seed crystal 122, including but not limited to being formed by co-depositing the deposited material 1231 with a co-deposited dielectric material.

[0174] In some non-limiting examples, the ratio of the deposited material 1231 to the co-deposited dielectric material may be within at least one of about 50:1–5:1, 30:1–5:1, or 20:1–10:1. In some non-limiting examples, the ratio may be at least one of about 50:1, 45:1, 40:1, 35:1, 30:1, 25:1, 20:1, 19:1, 15:1, 12.5:1, 10:1, 7.5:1, or 5:1.

[0175] In some non-limiting examples, the co-deposited dielectric material may have an initial adhesion probability to the deposition of the deposition material 1231 with which it can be co-deposited, which may be less than 1.

[0176] In some non-limiting examples, the ratio of the deposited material 1231 to the co-deposited dielectric material may vary depending on the initial adhesion probability of the co-deposited dielectric material to the deposition of the deposited material 1231.

[0177] In some non-limiting examples, the co-deposited dielectric material may be an organic material. In some non-limiting examples, the co-deposited dielectric material may be a semiconductor. In some non-limiting examples, the co-deposited dielectric material may be an organic semiconductor.

[0178] In some non-limiting examples, in the absence of a template layer including seed crystal 122, co-depositing the deposited material 1231 with a co-deposited dielectric material can promote the formation of particulate structure 121 in the EM radiation absorbing layer 120.

[0179] In some non-limiting examples, co-depositing the deposited material 1231 with a co-deposited dielectric material may promote and / or increase the absorption of EM radiation by the EM radiation absorbing layer 120, which is typically or in some non-limiting examples in the wavelength range of the EM spectrum (including but not limited to the visible spectrum) and / or its sub-ranges and / or wavelengths (including but not limited to those corresponding to a specific color).

[0180] Absorption around the emission area

[0181] In some non-limiting examples, the layered semiconductor device 100 may be an optoelectronic device 200, such as an organic light-emitting diode (OLED), including at least one emitting region 610. Figure 7A In some non-limiting examples, the emission region 610 may correspond to at least one semiconducting layer 630. Figure 15The semiconductive layer is disposed on the first electrode 620. Figure 15 In some non-limiting examples, it can be an anode and a second electrode 640. Figure 15 In some non-limiting examples, it may be between the anode and cathode. The anode and cathode may be connected to a power supply 1505. Figure 15 They are electrically coupled and generate holes and electrons respectively, which migrate toward each other through at least one semiconducting layer 630. When a pair of holes and electrons combine, they can emit EM radiation in the form of photons.

[0182] In some non-limiting examples, the EM radiation absorbing layer 120 may be deposited on and / or over the exposed surface 11 of the second electrode 640.

[0183] In some non-limiting examples, the lateral orientation of the exposed surface 11 of device 100 may include a first portion 401. Figure 4A ) and Part 402 ( Figure 4A In some non-limiting examples, the second portion 402 may include a portion of the exposed surface 11 of the lower layer of the device 100 that is outside the first portion 401.

[0184] In some non-limiting examples, the EM radiation absorbing layer 120 may be omitted, or may not extend on the first portion 401, but may only extend on the second portion 402. In some non-limiting examples, such as Figure 4A As shown by way of non-limiting example, the first part 401 may more or less correspond to type 400 of device 100. a At least one non-emission region 1902 ( Figure 19A ) Lateral orientation towards 1620 ( Figure 16 The seed crystal 122 can be patterned in the non-EM layer coating 210. n Deposition before deposition.

[0185] This non-limiting configuration can be adapted to achieve and / or maximize the transmittance of EM radiation emitted from at least one emission region 610, while reducing the reflection of external EM radiation incident on the exposed layer surface 11 of the device 100.

[0186] Therefore, as Figure 4A As shown, in this scenario, a non-EM layer patterned coating 210 can be deposited. n However, this is not for depositing an EM radiation absorbing layer 120, but rather to limit its lateral extent, which can form such a non-EM layer patterned coating 210. n The patterned material 1111 may not exhibit a relatively low initial adhesion probability relative to the deposited material 1231 and / or the seed material, as discussed above.

[0187] Those skilled in the art will understand that, in some non-limiting examples, the EM radiation absorbing layer 120 may be omitted from the emitting region 610 of the device 100 and / or the region including the emitting region, and in some examples, the second portion 402 may correspond to and / or include such other regions.

[0188] In some non-limiting examples, the absorption may be focused within a certain range of the absorption spectrum of the EM spectrum, including but not limited to the visible spectrum and / or its sub-ranges. In some non-limiting examples, employing the EM radiation absorption layer 120 as part of the layered optoelectronic device 100 can reduce dependence on the polarizer therein.

[0189] Those skilled in the art will understand that, in some non-limiting examples, multiple EM radiation absorbing layers 120 may be disposed on top of each other, regardless of whether they are separated by additional layers, thus having varying orientations and different absorption spectra. In this way, the absorption of certain regions of the device can be tuned according to one or more desired absorption spectra.

[0190] Although the EM radiation absorbing layer 120 can absorb EM radiation incident on it from outside the layered semiconductor device 100, thereby reducing reflection, those skilled in the art will understand that in some non-limiting examples, the EM radiation absorbing layer 120 can absorb EM radiation emitted by the device 100 that is incident on it.

[0191] In some non-restrictive examples, such as Figure 4A As shown, the non-EM layer patterned coating 210 n Seed 122 can be deposited on exposed layer surface 11 after deposition in template layer (if any), such that seed 122 can be deposited across both first portion 401 and second portion 402, and non-EM layer patterned coating 210 n Seed crystals 122 can cover the first part 401 deposited.

[0192] In some non-limiting examples, the non-EM layer patterned coating 210 n A surface with a relatively low initial adhesion probability can be provided not only for the deposition of material 1231 but also for the deposition of seed material. In such examples, such as Figure 4B Example type 400 of device 100 b As shown, the non-EM layer patterned coating 210 n It can be deposited before, rather than after, any deposition of the seed material.

[0193] Selective deposition of non-EM layer patterned coating 210 across the first section 401 nSubsequently, in some non-limiting examples, conductive deposition material 1231 may be deposited on device 400 using an aperture mask and / or maskless deposition process (but may be substantially retained only within the second portion 402, which may be substantially unpatterned coating 210), as and / or forming the particulate structure 121 therein, including but not limited to by surrounding the unpatterned coating 210 of the non-EM layer. n The corresponding seed crystals 122 (if present) are aggregated to form the covering.

[0194] Selective deposition of non-EM layer patterned coating 210 across the first section 401 n Subsequently, in some non-limiting examples, an aperture mask and / or maskless deposition process may be used to deposit seed material (if deposited) across the exposed surface 11 of device 400 in a template layer, but the seed 122 may remain substantially only within the second portion 402, which may substantially lack the non-EM layer patterning coating 210. n .

[0195] Furthermore, in some non-limiting examples, an open-mask and / or maskless deposition process may be used to deposit the deposition material 1231 across the exposed layer surface 11 of the device 400 as and / or to form the particulate structure 121 therein, including but not limited to formation by agglomeration around a corresponding seed crystal 122; however, the deposition material 1231 may remain substantially only within the second portion 402, which may substantially lack a non-EM layer patterned coating 210. n .

[0196] Non-EM layer patterned coating 210 n A surface with a relatively low initial adhesion probability for the deposition of the deposited material 1231 and / or seed material (if any) may be provided within the first portion 401, which may be significantly less than the initial adhesion probability for the deposition of the deposited material 1231 and / or seed material (if any) on the exposed surface 11 of the lower layer of the device 300 within the second portion 402.

[0197] Therefore, the first portion 401 may be substantially free of any seed crystal 122 and / or deposited material 1231 enclosing coating 1040 that can be deposited within the second portion 402 to form a particulate structure 121 (including but not limited to those formed by agglomeration around the seed crystal 122) and / or deposited material 1231.

[0198] Those skilled in the art will understand that even if some deposited material 1231 and / or some seed material remain within the first portion 401, the amount of any such deposited material 1231 and / or seed crystal 122 formed by the seed material in the first portion 401 may be significantly less than the amount in the second portion 402, and any such deposited material 1231 in the first portion 401 may tend to form a discontinuous layer 130 that may be substantially free of particulate structure 121. Even if some of these deposited materials 1231 in the first part 401 form granular structures 121, including but not limited to those forming around seed crystals 122 formed of seed material, the size, height, weight, thickness, shape, profile and / or spacing of any such granular structures 121 may still be sufficiently different from the size, height, weight, thickness, shape, profile and / or spacing of the granular structures 121 of the EM radiation absorbing layer 120 of the second part 402, such that (including but not limited to) in the wavelength range of the EM spectrum (including but not limited to the visible spectrum) and / or its sub-ranges and / or wavelengths (including but not limited to those corresponding to a specific color), the absorption of EM radiation in the first part 401 may be significantly less than the absorption of EM radiation in the second part 402.

[0199] In this way, the non-EM layer patterned coating 210 n Selective deposition, including but not limited to the use of a shadow mask 1115, can be used to allow deposition of material 1231 to form granular structures 121, including but not limited to those formed by agglomeration around corresponding seed crystals 122.

[0200] Those skilled in the art will understand that, in some non-limiting examples, structures exhibiting relatively low reflectivity may be suitable for providing the EM radiation absorbing layer 120.

[0201] Display panel

[0202] Now go to Figure 5 The figure shows a cross-sectional view of the display panel 510. In some non-limiting examples, the display panel 510 may be a type of layered semiconductor device 100, including but not limited to optoelectronic devices 200 that terminate at the outermost layer of the surface 501 forming the display panel.

[0203] The surface 501 of the display panel 510 may extend substantially along a plane defined by a lateral axis across its lateral orientation.

[0204] User equipment

[0205] In some non-limiting examples, surface 501, and indeed the entire display panel 510, may serve as the surface of user equipment 500, through which at least one EM signal 531 may be exchanged at an angle relative to the plane of surface 501. In some non-limiting examples, user equipment 500 may be a computing device such as, but not limited to, smartphones, tablets, laptops and / or e-readers, and / or some other electronic devices such as monitors, televisions and / or smart devices, including but not limited to automotive displays and / or windshields, home appliances and / or medical, commercial and / or industrial equipment.

[0206] In some non-limiting examples, surface 501 may correspond to and / or match opening 521 in body 502 and / or therein, in which at least one display lower component 530 may be accommodated.

[0207] In some non-limiting examples, at least one under-display component 530 may be integrally formed with the display panel 510 on its surface opposite to the surface 501, or formed as an assembly module. In some non-limiting examples, at least one under-display component 530 may be formed on the exposed layer surface 11 of the substrate 10 of the display panel 510 opposite to the surface 501.

[0208] In some non-limiting examples, at least one hole 513 may be formed in the display panel 510 to allow at least one EM signal 531 to pass through the surface 501 of the display panel 510 to exchange at an angle with the plane defined by the lateral axis of the various layers of the display panel 510 (including but not limited to the surface 501 of the display panel 510) or the accompanying layer.

[0209] In some non-limiting examples, at least one aperture 513 can be understood as including the absence of a substantially opaque coating that would normally be disposed across the display panel 510, and / or a reduction in thickness and / or opacity. In some non-limiting examples, at least one aperture 513 can be embodied as a signal transmission region 520 as described herein.

[0210] However, at least one aperture 513 is provided, through which at least one EM signal 531 can pass, such that it passes through surface 501. Therefore, at least one EM signal 531 can be considered to exclude any EM radiation that can extend along the plane defined by the lateral axis, including but not limited to any current that can be conducted laterally across the display panel 510 across the EM radiation absorption layer 120.

[0211] Furthermore, those skilled in the art will understand that at least one EM signal 531 can be distinguished from the EM radiation itself, including but not limited to the current and / or electric field generated therefrom, because at least one EM signal 531 can convey some information content, including but not limited to an identifier, by which at least one EM signal 531 can be distinguished from other EM signals 531, either alone or together with other EM signals 531. In some non-limiting examples, this information content can be conveyed by specifying, changing, and / or modulating at least one of the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, and / or other characteristics of at least one EM signal 531.

[0212] In some non-limiting examples, at least one EM signal 531 passing through at least one aperture 513 of the display panel 510 may include at least one photon, and in some non-limiting examples, may have a wavelength spectrum that is non-limitingly located within at least one of the visible spectrum, IR spectrum, and / or NIR spectrum. In some non-limiting examples, at least one EM signal 531 passing through at least one aperture 513 of the display panel 510 may have a wavelength located within, but not limited to, the IR and / or NR spectrum.

[0213] In some non-limiting examples, at least one EM signal 531 passing through at least one hole 513 of the display panel 510 may include ambient light incident thereon.

[0214] In some non-limiting examples, at least one EM signal 531 exchanged through at least one hole 513 of the display panel 510 may be transmitted and / or received by at least one display under component 531.

[0215] In some non-limiting examples, at least one display under-partition 530 may have a size larger than that of a single signal transmission region 520, but may be located not only under a plurality of them, but also under at least one emission region 610 extending therebetween. Similarly, in some non-limiting examples, at least one display under-partition 531 may have a size larger than that of a single aperture in at least one aperture 513.

[0216] In some non-limiting examples, at least one under-display component 530 may include a receiver 530. r The receiver is adapted to receive and process at least one received EM signal 531 passing through at least one aperture 513 from outside the user equipment 500. r This receiver 530 rNon-limiting examples include under-display cameras (UDC) and / or sensors, including but not limited to IR sensors or detectors, NIR sensors or detectors, LIDAR sensing modules, fingerprint sensing modules, optical sensing modules, IR (proximity) sensing modules, iris recognition sensing modules and / or facial recognition sensing modules, and / or portions thereof.

[0217] In some non-limiting examples, at least one under-display component 530 may include a transmitter 530. t The transmitter is adapted to transmit at least one transmit EM signal 531 from outside the user equipment 500 through at least one aperture 513. t This type of transmitter is 530. t Non-limiting examples include EM radiation sources, including but not limited to built-in flash, IR transmitter and / or NIR transmitter and / or LIDAR sensing module, fingerprint sensing module, optical sensing module, IR (proximity) sensing module, iris recognition sensing module and / or facial recognition sensing module, and / or a portion thereof.

[0218] In some non-limiting examples, at least one EM signal 531 (including but not limited to signals transmitted through at least one hole 513 of the display panel 510 outside the user equipment 500) passes through at least one hole 513 of the display panel 510. t At least one display component 530 transmits an EM signal 531. t It can be emitted from the display panel 510 and used as a transmitting EM signal 531 t The signal is transmitted back to the receiver 530 through at least one hole 513 in the display panel 510. r At least one display lower component 530.

[0219] In some non-limiting examples, the under-display component 530 may include an IR emitter and an IR sensor. As a non-limiting example, such an under-display component 530 may include (as part of, component of, or module thereof): a dot projector, a time-of-flight (ToF) sensor module (which may operate as direct ToF and / or indirect ToF), a VCSEL, a flood illuminator, an NIR imager, folded optics, and a diffraction grating.

[0220] In some non-limiting examples, multiple display under-display components 530 may exist within user equipment 500, the first of which includes a transmitter 530. t The transmitter is used to transmit at least one transmit EM signal 531 from outside the user equipment 500 through at least one aperture 513. t And the second of them includes receiver 530 r The receiver is used to receive at least one EM signal 531. rIn some non-limiting examples, this transmitter 530 t and receiver 530 r It can be embodied in component 530 under a single public display.

[0221] This can be achieved through Figure 6A As seen in the non-limiting examples, user equipment 500 is shown to have a display panel 510 that includes at least one display portion 615 in a lateral direction (shown vertically in the figures), the at least one display portion being adjacent to and separated from at least one signal exchange display portion 616 in some non-limiting examples. User equipment 500 accommodates the transmission of at least one transmitted EM signal 531 through at least one first signal transmission region 520 outside surface 501 in the first signal exchange display portion 620. t At least one transmitter 530 t and for receiving at least one received EM signal 531 through at least one second signal transmission area 520 in the second signal exchange display portion 616. r Receiver 530 r In some non-limiting examples, at least one of the first and second signal exchange display portions 616 may be identical.

[0222] Figure 6B A plan view of a user equipment 500 according to a non-limiting example is shown, the user equipment including a display panel 510 defining a surface of the device. The device 500 accommodates at least one transmitter 530 disposed outside the surface 501. t and at least one receiver 530 r . Figure 6C A cross-sectional view taken along line 6C-6C of device 500 is shown.

[0223] Display panel 510 includes a display portion 615 and a signal exchange display portion 616. Display portion 615 includes multiple emission areas 610. Signal exchange display portion 616 includes multiple emission areas 610 and multiple signal transmission areas 520. The multiple emission areas 610 in display portion 615 and signal exchange display portion 616 correspond to sub-pixels 64x ( ) of display panel 510. Figure 6H Multiple signal transmission regions 520 in the signal exchange display section 616 are configured to allow signals or light having wavelengths corresponding to the IR range of the electromagnetic spectrum to pass through their entire cross-section. At least one transmitter 530 t and at least one receiver 530 r Arranged behind the corresponding signal exchange display section 616, the IR signal is transmitted and received respectively through the signal exchange display section 616 of the panel 510. In the non-limiting example shown, at least one transmitter 530t and at least one receiver 530 r Each of them is shown as having a corresponding signal exchange display section 616 disposed in the signal transmission path.

[0224] Figure 6D A plan view of a user equipment 500 according to another non-limiting example is shown, wherein at least one transmitter 530 t and at least one receiver 530 r Both are arranged behind the common signal exchange display section 616. As a non-limiting example, the signal exchange display section 616 may extend along at least one configuration axis in this plan view, such that it extends beyond the transmitter 530. t and receiver 530 r Both. Figure 6E It is along Figure 6D The sectional view taken from line 6E-6E in the middle.

[0225] Figure 6F A plan view of a user equipment 500 according to yet another non-limiting example is shown, wherein the display panel 510 further includes a non-display portion 551. More specifically, the display panel 510 includes at least one transmitter 530. t and at least one receiver 530 rEach of these is arranged behind the corresponding signal exchange display portion 616. In the plan view, a non-display portion 551 is arranged adjacent to and between the two signal exchange display portions 616. The non-display portion 551 generally omits the presence of any light-emitting area. In some non-limiting examples, the device 500 accommodates a camera 540 arranged in the non-display portion 551. In some non-limiting examples, the non-display portion 551 includes a through-hole portion 552 arranged to overlap with the camera 540. The panel 510 in the through-hole portion 552 may omit the presence of one or more layers, coatings, and / or components present in the display portion 615 and / or signal exchange display portion 616. As a non-limiting example, the panel 510 in the through-hole portion 552 may omit the presence of one or more backplate and / or front panel components that would otherwise interfere with the image captured by the camera 540. In some non-limiting examples, the cover glass of panel 510 extends substantially across display portion 615, signal exchange display portion 616, and through-hole portion 552, such that it is present in all the aforementioned portions of panel 510. In some non-limiting examples, panel 510 also includes a polarizer (not shown) that extends substantially across display portion 615, signal exchange display portion 616, and through-hole portion 552, such that it is present in all the aforementioned portions of panel 510. In some non-limiting examples, the presence of the polarizer in through-hole portion 552 may be omitted to enhance light transmission through this portion of panel 510.

[0226] In some non-limiting examples, the non-display portion 551 of panel 510 also includes a non-through-hole portion 553. As a non-limiting example, the non-through-hole portion 553 may be arranged between the through-hole portion 552 and the signal exchange display portion 616 in this plan view. In some non-limiting examples, the non-through-hole portion 553 may surround at least a portion or all of the periphery of the through-hole portion 552. Although not specifically shown, device 500 may include additional modules, components, and / or sensors in the portion of device 500 corresponding to the non-through-hole portion 553 of display panel 510.

[0227] In some non-limiting examples, the signal exchange display portion 616 may reduce or substantially omit the presence of backplane components that would otherwise obstruct or reduce light transmission through the signal exchange display portion 616. As a non-limiting example, the TFT structure 701 may be omitted from the signal exchange display portion 616. Figure 7AThe presence of TFT structures and / or TFT components, including but not limited to: metal traces, capacitors, and / or other opaque or light-absorbing elements. In some non-limiting examples, the light-emitting region 610 in the signal exchange display portion 616 may be electrically coupled to one or more TFT structures and / or TFT components located in the non-via portion 553 of the non-display portion 551. Specifically, the TFT structures and / or TFT components used to excite the sub-pixels in the signal exchange display portion 616 may be repositioned outside the signal exchange display portion 616 and within the non-via portion 553 of the panel 510, such that relatively high light transmittance through the non-emitting region within the signal exchange display portion 616 is obtained, at least in the IR and / or NIR wavelength range. As a non-limiting example, the TFT structures and / or TFT components in the non-via portion 553 may be electrically coupled to the sub-pixels in the signal exchange display portion 616 via conductive traces. In some non-limiting examples, the emitter 530 t and receiver 530 r Arranged to be adjacent to or close to the non-via portion 553 in the plan view, such that the distance the current travels between the TFT structure and / or TFT components and the sub-pixel is reduced.

[0228] In some non-limiting examples, the light-emitting region 610 is configured such that at least one of the aperture ratio and pixel density of the light-emitting region is the same between the display portion 615 and the signal exchange display portion 616. In some non-limiting examples, the light-emitting region 610 is configured such that both the aperture ratio and pixel density of the light-emitting region are the same between the display portion 615 and the signal exchange display portion 616. In some non-limiting examples, the pixel density may be greater than about 300 ppi, 350 ppi, 400 ppi, 450 ppi, 500 ppi, 550 ppi, or 600 ppi. In some non-limiting examples, the aperture ratio may be greater than about 25%, 27%, 30%, 33%, 35%, or 40%. In some non-limiting examples, the light-emitting regions 610 or pixels of the panel 510 may be substantially the same shape and arranged between the display portion 615 and the signal exchange display portion 616 to reduce the likelihood that a user will detect a visual difference between the display portion 615 and the signal exchange display portion 616 of the panel 510.

[0229] Figure 6HAn enlarged plan view of a portion of panel 510 according to a non-limiting example is shown. Specifically, the configuration and layout of emitting regions 610, represented as sub-pixels 64x, are shown in display portion 615 and signal exchange display portion 616. In each portion, a plurality of emitting regions 610 are provided, each corresponding to a sub-pixel 64x. In some non-limiting examples, sub-pixels 64x may correspond to R (red) sub-pixels 641, G (green) sub-pixels 642, and / or B (blue) sub-pixels 643, respectively. In signal exchange display portion 616, a plurality of signal transmission regions 520 are provided between adjacent sub-pixels 64x.

[0230] exist Figure 6H In the diagram, the display portion 615 and the signal exchange display portion 616 are indicated by a wavy dividing line. In some non-limiting examples, the display panel 510 also includes a transition region (not shown) between the display portion 615 and the signal exchange display portion 616, wherein the configuration of the emitting region 610 and / or the signal transmission region 520 may differ from the configuration of the adjacent display portion 615 and / or the signal exchange display portion 616. In some non-limiting examples, the presence of such a transition region may be omitted, such that the emitting region 610 is provided in a substantially continuous repeating pattern across the display portion 615 and the signal exchange display portion 616.

[0231] Although not shown, in some non-limiting examples, the thickness of the pixel defining layer (PDL) 740 in at least one signal transmission region 520, in some non-limiting examples at least in a region laterally spaced from the adjacent emission region 610, and in some non-limiting examples in the TFT insulating layer 709 (FIG. 7) may be reduced in order to enhance the transmittance and / or transmission angle of the layers relative to the surface 501 and through these layers.

[0232] For example, in the form of user equipment 500, there is model 700. a Simplified block diagram Figure 7A As shown, in some non-limiting examples, at least one emission region 610 is laterally oriented towards 1610. Figure 16 The TFT structure 701 may extend across and include associated with at least one TFT structure 701 for driving the emission region 610 along data and / or scan lines (not shown), which, in some non-limiting examples, may be formed of copper (Cu) and / or transparent conductive oxide (TCO).

[0233] In some non-limiting examples, at least one receives an EM signal 531. r Includes at least one transmitted EM signal 531 t At least one segment of the material is reflected from the outer surface or otherwise returned to the user equipment 500.

[0234] In some non-limiting examples, user equipment 500 is configured such that at least one transmitter 530 t Transmit at least one EM signal 531 t And it passes through the display panel 510 so that it is incident on the face, contours, or other parts of the user 60 of the user equipment 500. At least one transmitted EM signal 531 is incident on the user 60. t The fragment is reflected by user 60 or otherwise returned to generate at least one received EM signal 531. r The at least one receiving EM signal then passes through the display panel 510, so that it is received by at least one receiver 530. r Receive and / or detect.

[0235] In some non-limiting examples, by causing at least one transmitter 530 t Generate at least one transmitted EM signal 531 to be reflected from user 60. t To generate at least one associated received EM signal 531 r (collectively referred to as EM signal pair 531), the signal is received by at least one receiver 530 r The system detects and provides users with 60% biometric authentication.

[0236] In some non-limiting examples, at least one transmitter 530 t It can be an IR transmitter, which is used to transmit at least one EM signal 531 having a wavelength range in the IR spectrum and / or NIR spectrum as at least one transmitted IR signal 531. t In some non-limiting examples, at least one receiver 530 r It can be an IR sensor, which is used to receive at least one EM signal 531 having wavelengths in the IR spectrum and / or NIR spectrum as at least one received IR signal 531. r .

[0237] In some non-limiting examples, the signal transmission area 520 of the display panel 510 is arranged in an array, and at least one transmitter 530 t and / or at least one receiver 530 r The display panel 510 is positioned behind the user equipment 500 such that at least one EM signal pair 531 associated therewith is configured to pass through at least one signal transmission area 520 of the display panel 510.

[0238] In some non-limiting examples, at least one transmitter 530 t and at least one receiver 530 rIt is positioned to allow at least one EM signal pair 531 associated with it to pass through a common signal transmission area 520. In some non-limiting examples, at least one transmitter 530 t and at least one receiver 530 r It is positioned to allow at least one EM signal pair 531 associated with it to pass through different signal transmission regions 520.

[0239] In the display panel 510, at least one emission region 610 may have a second portion 402 of the display panel 510 which is laterally oriented thereto, wherein the exposed layer surface 11 of the underlying layer may have a sealing coating 1040 of a deposition material 1231 deposited thereon.

[0240] In the display panel 510, at least one signal transmission region 520 may have a first portion 401 laterally oriented in relation to the display panel 510, wherein the EM layer patterned coating 210 e It can be disposed on the exposed surface 11 of the lower layer, and an EM radiation absorbing layer 120 comprising a discontinuous layer 130 including at least one particulate structure 121 is disposed on the exposed surface 11.

[0241] In some non-limiting examples, at least one signal transmission region 520 may be substantially free of a sealing coating 1040 of deposited material 1231.

[0242] In some non-limiting examples, at least one signal transmission region 520 may facilitate the absorption of EM radiation in at least the wavelength range of the visible spectrum, while allowing EM radiation in at least the wavelength range of the IR spectrum to pass through it.

[0243] This allows at least one IR signal to be emitted 531 t and at least one receiving IR signal 531 r Transmitted from (at least where they are in the IR spectrum), while absorbing at least a portion of these (or other) EM signals 531 (where they are in the visible spectrum), including EM signals 531 (not shown) that can be incident on the display panel 510 from an external source in at least the wavelength range of the visible spectrum.

[0244] In this way, IR transmitter 530 t and IR detector 530 r Its presence can be at least partially hidden from the user 60, while essentially not hindering at least one IR signal transmission 531. t and at least one receiving IR signal 531 r Transmission through display panel 510 includes, but is not limited to, providing biometric authentication for user 60.

[0245] This configuration of the display panel 510 can be advantageous, for example, allowing the IR emitter 530 to... t and / or IR detector 530 r Positioned within user equipment 500, with at least one signal transmission area 520 positioned within the lateral range of display panel 510, while substantially not affecting user experience, and / or facilitating the concealment of IR transmitter 530 from user 60. t and / or IR detector 530 r .

[0246] Those skilled in the art will understand that, in some non-limiting examples, at least one under-display component 530 (including, but not limited to, an IR transmitter 530) t and / or IR detector 530 r The display element 530 may be sized to be located not only under a single signal transmission region 520, but also under multiple signal transmission regions 520, and / or under at least one emission region 610 extending therebetween. In such an example, at least one display under-display component 530 may be positioned under the multiple signal transmission regions 520 and may exchange EM signals 531 that pass through the multiple signal transmission regions 520 at an angle relative to and through the layers of the display panel 510.

[0247] In some non-limiting examples, at least one semiconductive layer 630 may be deposited on the exposed surface 11 of the face 501 in at least a portion of the emission region 610, and in some non-limiting examples, the face includes a first electrode 620.

[0248] In some non-limiting examples, the exposed layer surface 11 of surface 501 (which may include at least one semiconductive layer 630 in some non-limiting examples) may be exposed to the evaporation flux 1112 of the patterned material 1111. Figure 11 This includes, but is not limited to, using a shadow mask 1115 to form a patterned coating 210 in the first part 401. Regardless of whether a shadow mask 1115 is used, the patterned coating 210 can be substantially confined to the signal transmission area 520 in its lateral orientation.

[0249] In some non-limiting examples, the exposed layer surface 11 of face 501 may be exposed to the vapor flux 1232 of the deposited material 1231, including but not limited to in open mask and / or maskless deposition processes.

[0250] In some non-limiting examples, the exposed layer 11 of surface 501 within the lateral orientation 1620 of at least one signal transmission region 520 may include a patterned coating 210. Therefore, within the lateral orientation 1620 of at least one signal transmission region 520, the vapor flux 1232 of the deposited material 1231 incident on the exposed layer surface 11 may form at least one particulate structure 121 on the exposed layer surface 11 of the patterned coating 210 as an EM radiation absorbing layer 120. In some non-limiting examples, the surface coverage of the EM radiation absorbing layer 120 may not exceed at least one of about 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10%.

[0251] Meanwhile, since the patterned coating 210 is substantially confined to the non-emitting region 1902 in its lateral orientation, in some non-limiting examples, the exposed layer surface 11 of the face 501 within the lateral orientation 1610 of the emitting region 610 may include at least one semi-conductive layer 630. Therefore, within the second portion 402 of the lateral orientation 1610 of at least one emitting region 610, the vapor flux 1232 incident on the exposed layer surface 11 of the deposited material 1231 may form a sealing coating 1040 of the deposited material 1231 as a second electrode 640.

[0252] Therefore, in some non-limiting examples, the patterned coating 210 can be used for a dual purpose, namely as a patterned coating 210 for the EM layer. e To provide a substrate for depositing the EM layer radiation absorbing layer 120 in the first part 402, and as a non-EM layer patterning coating 210 n The lateral extent of the deposition of the deposition material 1231, which serves as the second electrode 640, is limited to the second portion 401, and no shadow mask 1115 is used during the deposition of the deposition material 1231.

[0253] In some non-limiting examples, the average film thickness of the sealing coating 1040 of the deposited material 1231 may be at least one of about 5 nm, 6 nm, or 8 nm. In some non-limiting examples, the deposited material 1231 may include MgAg.

[0254] In some non-limiting examples, the second electrode 640 may extend partially over the patterned coating 210 in the transition region 705.

[0255] Details of the EM radiation absorbing layer

[0256] In some non-limiting examples, the EM radiation absorbing layer 120 may include a patterned coating 210 deposited on the EM layer. e At least one particulate structure 121 on the surface, including but not limited to deposition using maskless and / or open mask deposition processes.

[0257] Without being bound by any particular theory, it can be assumed that although the formation of the closed coating 1040 on the deposited material 1231 can be patterned in the EM layer coating 210 e The above is essentially suppressed, but in some non-limiting examples, when the EM layer is patterned with coating 210 e When exposed to deposition on the deposited material 1231, some vapor monomers of the deposited material 1231 may eventually form at least one particulate structure 121 of the deposited material 1231 on it.

[0258] Therefore, in some non-limiting examples, the EM radiation absorbing layer 120 may include a discontinuous layer 130, which in some non-limiting examples includes at least one particulate structure 121 of the deposited material 1231. In some non-limiting examples, at least some of the particulate structures 121 may be disconnected from each other. In other words, in some non-limiting examples, the discontinuous coating 130 may include features (including particulate structures 121) that are physically separable from each other, such that the EM radiation absorbing layer 120 does not form a closed coating 1040.

[0259] In some non-limiting examples, this EM radiation absorbing layer 120 may therefore include a thin, dispersed layer of deposited material 1231 formed as a granular structure 121, intercalated into the EM layer patterned coating 210 in the display panel 510. e At the interface with at least one cover layer 710 and / or substantially across the lateral extent of the interface.

[0260] In some non-limiting examples, at least one of the granular structures 121 of the deposited material 1231 in the EM radiation absorbing layer 120 may be associated with the EM layer patterned coating 210. e The exposed surface 11 is in physical contact. In some non-limiting examples, substantially all of the granular structure 121 of the deposited material 1231 in the EM radiation absorbing layer 120 is compatible with the patterned coating 210 of the EM layer. e Physical contact 11 of the exposed layer surface.

[0261] Not wanting to be bound by any particular theory, it has been found, somewhat surprisingly, that patterning the coating 210 in the EM layer... eA thin, dispersed EM radiation absorbing layer 120 (including, but not limited to, at least one particulate structure 121, including, but not limited to, metallic particulate structures 121, including, but not limited to, in the discontinuous layer 130) with deposited material 1231 on the exposed surface 11 may exhibit one or more varied properties and associated varied behaviors, including, but not limited to, the optical effects and properties of the display panel 510, as discussed herein. In some non-limiting examples, the EM layer patterning coating 210 can be achieved by judiciously selecting the EM layer. e The characteristic size, size distribution, shape, surface coverage, texture, deposition density and / or dispersion of the granular structure 121 are used to control such effects and properties to a certain extent.

[0262] In some non-limiting examples, the formation of at least one of the characteristic dimensions, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion of such EM radiation absorbing layer 120 can be controlled in some non-limiting examples by wisely selecting at least one of the following: at least one property of the patterned material 1111, and the EM layer patterned coating 210. e The average film thickness, in the EM layer patterned coating 210 e Introducing heterogeneous materials and / or deposition environments, including but not limited to those used for patterning coatings in EM layers 210 e The temperature, pressure, duration, deposition rate and / or deposition process of the patterned material 1111.

[0263] In some non-limiting examples, the formation of at least one of the characteristic dimensions, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion of this non-EM radiation absorbing layer 120 can be controlled in some non-limiting examples by wisely selecting at least one of the following: at least one property of the deposited material 1231, the EM layer patterned coating 210 e The extent to which the deposition material 1231 can be exposed (in some non-limiting examples, this may be specified based on the thickness of the corresponding discontinuous layer 130), and / or the deposition environment, including but not limited to the temperature, pressure, duration, deposition rate, and / or deposition method of the deposition material 1231.

[0264] In some non-limiting examples, at least one particulate structure 121 of the EM radiation absorbing layer 120 may be provided such that it exhibits greater absorption in at least one wavelength subrange of the visible spectrum than in the IR and / or NIR spectra. In some non-limiting examples, at least one particulate structure 121 of the EM radiation absorbing layer 120 may be provided such that it does not absorb EM radiation in at least one wavelength subrange of the visible spectrum and substantially does not absorb EM radiation in the IR and / or NIR spectra.

[0265] In some non-limiting examples, the EM radiation absorbing layer 120 of the deposited material 1231 (including but not limited to at least one particulate structure 120) may include and / or serve as a UVA absorbing coating 120, which is generally capable of absorbing EM radiation in the UVA spectrum.

[0266] In some non-limiting examples, it may be beneficial to provide such a UVA absorbing coating 120 to reduce and / or mitigate the transmission of UVA radiation through the display panel 510. As a non-limiting example, the presence of such a UVA absorbing coating 120 can enhance the image quality captured by the lower display component 530 through the display panel 510 by reducing interference caused by UVA radiation.

[0267] In some non-limiting examples, the EM radiation absorbing layer 120 can absorb EM radiation in at least a portion of the UV spectrum and at least a portion of the visible spectrum, while exhibiting reduced absorption and / or substantially no absorption of EM radiation in the IR and / or NIR spectra.

[0268] In some non-limiting examples, optical effects can be described in terms of their influence on the transmission and / or absorption wavelength spectrum (including wavelength range) and / or its peak intensity.

[0269] In addition, while the presented model may suggest certain effects on the transmission and / or absorption of EM radiation through such EM radiation absorbing layer 120, in some non-limiting examples such effects may reflect local effects that may not be reflected on a broad, observable basis.

[0270] In some non-limiting examples, the characteristic size of the particle structure 121 in the EM radiation absorbing layer 120 (the observation window used) can reflect a statistical distribution.

[0271] In some non-limiting examples, for a particular distribution of the characteristic size of the particle structure 121, the intensity of the absorption spectrum may tend to be proportional to the deposition density of the EM radiation absorbing layer 120.

[0272] In some non-limiting examples, the characteristic size of the particle structure 121 in the EM radiation absorbing layer 120 (the observation window used) may be concentrated near a single value and / or in a relatively narrow range.

[0273] In some non-limiting examples, the characteristic size of the particle structure 121 in the EM radiation absorbing layer 120 (the observation window used) may be concentrated around at least one value and / or within at least one relatively narrow range. As a non-limiting example, the particle structure of the EM radiation absorbing layer 120 may exhibit multimodal behavior in which multiple different values ​​and / or ranges exist, and the characteristic size of the particle structure 121 in the EM radiation absorbing layer 120 (the observation window used) may be concentrated around these values ​​and / or ranges.

[0274] In some non-limiting examples, the EM radiation absorbing layer 120 may include a first at least one particle structure 1211 having a first characteristic size range and a second at least one particle structure 1212 having a second characteristic size range. In some non-limiting examples, the first characteristic size range may correspond to a size no greater than about 50 nm, and the second characteristic size range may correspond to a size of at least 50 nm. As a non-limiting example, the first characteristic size range may correspond to a size between about 1 nm and 49 nm, and the second characteristic size range may correspond to a size between about 50 nm and 300 nm. In some non-limiting examples, most of the first particle structures 1211 may have a characteristic size in the range of at least one of about 10 nm to 40 nm, 5 nm to 30 nm, 10 nm to 30 nm, 15 nm to 35 nm, 20 nm to 35 nm, or 25 nm to 35 nm. In some non-limiting examples, most of the second particle structures 1212 may have feature sizes in at least one of the ranges of about 50 nm-250 nm, 50 nm-200 nm, 60 nm-150 nm, 60 nm-100 nm, or 60 nm-90 nm. In some non-limiting examples, the first particle structure 1211 and the second particle structure 1212 may interpenetrate each other.

[0275] Five samples were fabricated to investigate the formation of this multimodal particle structure 121. A patterned coating 210 was created by depositing an approximately 20 nm thick organic semiconducting layer 630 on a glass substrate, followed by an approximately 34 nm thick Ag layer, and then an approximately 30 nm thick EM layer. e Then, the EM layer is patterned and coated with layer 210. e Each sample was prepared by subjecting its surface to an Ag vapor flux of 1232. SEM images of each sample were captured at various magnifications.

[0276] Figure 8ASEM image 800 of the first sample and another SEM image 805 at increased magnification are shown. Image 800 shows multiple first particle structures 1211 that tend to concentrate near a first small feature size, and a smaller number of second particle structures 1212 that tend to concentrate near a second larger feature size. Figure 810, showing the count of particle structures 121 as a function of feature particle size, shows that most of the first particle structures 1211 are concentrated around approximately 30 nm. Analysis indicates that the surface coverage of the observation window of image 800, which shows first particle structures 1211 with a feature size no larger than approximately 50 nm, is approximately 38%, while the surface coverage of the observation window of image 800, which shows second particle structures 1212 with a feature size of at least approximately 50 nm, is approximately 1%.

[0277] Figure 8B SEM image 820 of the second sample and another SEM image 825 with increased magnification are shown. Image 820 shows that while multiple first particle structures 1211 tend to concentrate near the first feature size, the number of second particle structures 1212 tending to concentrate near the second feature size is greater. Furthermore, these second particle structures 1212 tend to be more prominent. Figure 830, showing the count of particle structures 121 as a function of feature particle size, shows two distinguishable peaks: a large peak of first particle structures 1211 concentrated around approximately 30 nm and a smaller peak of second particles 1212 concentrated around approximately 75 nm. Analysis indicates that the surface coverage of the observation window of image 820, which shows first particle structures 1211 with a feature size no greater than approximately 50 nm, is approximately 23%, while the surface coverage of the observation window of image 820, which shows second particle structures 1212 with a feature size of at least approximately 50 nm, is approximately 10%.

[0278] Figure 8CSEM image 840 of the third sample and another SEM image 845 at increased magnification are shown. Image 840 shows that while multiple first particle structures 1211 tending to concentrate near the first feature size continue to exist, the number of second particle structures 1212 tending to concentrate near the second feature size is even greater than in the second sample. Figure 850, showing the count of particle structures 121 as a function of feature particle size, shows two distinguishable peaks: a large peak of first particle structures 1211 concentrated near approximately 30 nm, and a smaller (but larger than that shown in Figure 830) peak of second particle structures 1212 concentrated near approximately 75 nm. Analysis indicates that the surface coverage of the observation window of image 840, which shows first particle structures 1211 with a feature size no greater than approximately 50 nm, is approximately 19%, while the surface coverage of the observation window of image 840, which shows second particle structures 1212 with a feature size of at least approximately 50 nm, is approximately 21%.

[0279] Figure 8D SEM image 860 of the fourth sample and another SEM image 865 at increased magnification are shown. Image 860 shows that while multiple first particle structures 1211 tend to concentrate near the first feature size, the number of second particle structures 1212 tending to concentrate near the second feature size is greater. Figure 870, showing the count of particle structures 121 as a function of feature particle size, shows two distinguishable peaks: a large peak of first particle structures 1211 concentrated around approximately 20 nm and a smaller peak of second particle structures 1212 concentrated around approximately 85 nm. Analysis indicates that the surface coverage of the observation window of image 860, which shows first particle structures 1211 with a feature size no greater than approximately 50 nm, is approximately 14%, while the surface coverage of the observation window of image 860, which shows second particle structures 1212 with a feature size of at least approximately 50 nm, is approximately 34%.

[0280] Figure 8ESEM image 880 of the fifth sample and another SEM image 885 with increased magnification are shown. Image 880 shows that while multiple first particle structures 1211 tend to concentrate near the first feature size, the number of second particle structures 1212 tending to concentrate near the second feature size is greater. In fact, second particle structures 1212 tend to be dominant. Figure 890, showing the count of particle structures 121 as a function of feature particle size, shows two distinguishable peaks: a large peak of first particle structures 1211 concentrated around approximately 15 nm and a smaller peak of second particle structures 1212 concentrated around approximately 85 nm. Analysis indicates that the surface coverage of the observation window of image 880, which shows first particle structures 1211 with a feature size no greater than approximately 50 nm, is approximately 3%, while the surface coverage of the observation window of image 880, which shows second particle structures 1212 with a feature size of at least approximately 50 nm, is approximately 55%.

[0281] Without being bound by any particular theory, it can be assumed that, in some non-limiting examples, the coating 210 can be patterned on the EM layer. e The multimodal behavior of introducing multiple nucleation sites for depositing material 1231 to generate the EM radiation absorbing layer 120 includes, but is not limited to, introducing such multimodal behavior by doping, covering, and / or supplementing the patterned material 1111 with another material that can act as a seed crystal or a heterogeneous material that can act as such nucleation sites. In some non-limiting examples, it can be assumed that the first particle structure 1211 of the first feature size may tend to pattern the coating 210 in the EM layer. e The second granular structure 1212 of the second characteristic size may form at the location of such a nucleation site.

[0282] Those skilled in the art will understand that there may be other mechanisms that can produce such multimodal behavior.

[0283] As a simplifying assumption, the foregoing also assumes that the NP simulating each particle structure 121 can have a perfectly spherical shape. Typically, the shape of the particle structure 121 in the EM radiation absorbing layer 120 (of the observation window used) can be highly dependent on the deposition process. In some non-limiting examples, the shape of the particle structure 121 can have a significant impact on the SP excitation thus exhibited, including but not limited to the width, wavelength range and / or intensity of the resonance band, and consequently, its absorption band.

[0284] In some non-limiting examples, the material surrounding the EM radiation absorbing layer 120, whether beneath it (so that the particulate structure 121 can be deposited onto its exposed surface 11) or subsequently disposed on the exposed surface 11 of the EM radiation absorbing layer 120, can affect the optical effects resulting from the emission and / or transmission of EM radiation and / or EM signal 531 through the EM radiation absorbing layer 120.

[0285] It can be assumed that, in some non-limiting examples, the EM radiation absorbing layer 120 containing the particulate structure 121 is disposed on the EM layer patterned coating 210 which may be made of a low refractive index material. e The absorption spectrum of the EM radiation absorbing layer 120 may be shifted by placing it on or / or in physical contact with the surface of the exposed layer 11.

[0286] Since the EM radiation absorbing layer 120 can be arranged on and / or in physical contact with and / or close to the EM radiation absorbing layer, the display panel 510 can be configured such that the absorption spectrum of the EM radiation absorbing layer 120 can be adjusted and / or modified due to the presence of the EM radiation absorbing layer 120, including but not limited to making such absorption spectrum substantially overlap with and / or not overlap with at least one wavelength range of the EM spectrum, including but not limited to the visible spectrum, UV spectrum and / or IR spectrum.

[0287] In some non-limiting examples, the EM layer patterned coating 210 e and / or patterned material 1111 (in some non-limiting examples, when deposited as a film and / or coating in some form and in conjunction with patterned coating 210 of EM layer) e In an environment similar to that of deposition within the display panel 510, the material 1231 may have a first surface energy that is not greater than the second surface energy of the deposited material 1231 (in some non-limiting examples, when deposited as a film and / or coating in some form and in an environment similar to that of deposition of the EM radiation absorbing layer 120 within the display panel 510).

[0288] In some non-limiting examples, the quotient of the second surface energy to the first surface energy may be at least one of about 1, 5, 10 or 20.

[0289] In some non-limiting examples, the surface coverage of the area of ​​the EM layer patterned coating 210 covered by at least one particulate structure 121 deposited thereon may not exceed a maximum threshold percentage coverage.

[0290] In some non-limiting examples, where the EM signal 531 in the IR spectrum and / or NIR spectrum is allowed to pass through the signal transmission region 520 of the surface 501 of the display panel 510 at an angle relative to the layer of the surface 501, the particle structure 121 may have a feature size that may be located in at least one of about 1nm-200nm, 1nm-150nm, 1nm-100nm, 1nm-50nm, 1nm-40nm, 1nm-30nm, 1nm-20nm, 5nm-20nm or 8nm-15nm.

[0291] In some non-limiting examples, where the EM signal 531 in the IR and / or NIR spectra is allowed to pass through the signal transmission region 520 of the surface 501 of the display panel 510 at an angle relative to the layer of surface 501, the particle structure 121 may have an average and / or median characteristic size between about 5nm-100nm, 5nm-50nm, 5nm-40nm, 5nm-30nm, 5nm-25nm, 5nm-20nm, or 8nm-15nm. As a non-limiting example, such average and / or median sizes may correspond to the average diameter and / or median diameter of the particle structure 121 of the EM radiation absorbing layer 120, respectively.

[0292] In some non-limiting examples, where the EM signal 531 in the IR spectrum and / or NIR spectrum is allowed to pass through the signal transmission region 520 of the surface 501 of the display panel 510 at an angle relative to the layer of the surface 501, most of the particle structures 121 may have a maximum feature size not greater than at least one of about 100 nm, 80 nm, 50 nm, 40 nm, 30 nm, 25 nm, 20 nm or 15 nm.

[0293] In some non-limiting examples, where the EM signal 531 in the IR spectrum and / or NIR spectrum is allowed to pass through the signal transmission region 520 of the surface 501 of the display panel 510 at an angle relative to the layer of the surface 501, the percentage of the particle structure 121 having such a maximum characteristic size may be at least one of at least about 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15% or 10% of the area of ​​the EM radiation absorbing layer 120.

[0294] In some non-limiting examples, the particle structure 121 may be configured to allow EM signals 531 in the IR and / or NIR spectra to be transmitted through the signal transmission region 520 of the surface 501 of the display panel 510 at an angle relative to the layer of the surface 501, while absorbing EM signals 531 in at least a sub-range of the visible and / or UV spectra. In some non-limiting examples, such particle structure 121 may have: (i) a percentage coverage of at least one of about 10%-50%, 10%-45%, 12%-40%, 15%-40%, 15%-35%, 18%-35%, 20%-35%, or 20%-30%; (ii) most of the particle structures 121 may have a maximum feature size of at least one of about 40 nm, 35 nm, 30 nm, 25 nm, or 20 nm; and (iii) an average and / or median feature size of at least one of about 5 nm-40 nm, 5 nm-30 nm, 8 nm-30 nm, 10 nm-30 nm, 8 nm-25 nm, 10 nm-25 nm, 8 nm-20 nm, 10 nm-15 nm, or 8 nm-15 nm.

[0295] In some non-limiting examples, the resonance imparted by at least one particle structure 121 for enhancing the transmission of EM signal 531 through the non-emissive region 1902 of the surface 501 of the display panel 510 at an angle relative to the layer of the surface 501 can be adjusted by wisely selecting at least one of the characteristic size, size distribution, shape, surface coverage, construction, dispersion and / or material of the particle structure 121.

[0296] In some non-limiting examples, the resonance can be tuned by changing the deposition thickness of the deposition material 1231.

[0297] In some non-limiting examples, the patterning coating 210 of the EM layer can be changed. e The average film thickness is used to adjust the resonance.

[0298] In some non-limiting examples, the resonance can be adjusted by changing the thickness of at least one capping layer 710. In some non-limiting examples, the thickness of at least one capping layer 710 can range from 0 nm (corresponding to the absence of at least one capping layer 710) to a value exceeding the characteristics of the deposited particle structure 121.

[0299] In some non-limiting examples, the resonance can be tuned by changing the dielectric constant of the deposited particle structure 121 by altering the metallic composition in the deposited material 1231.

[0300] In some non-limiting examples, the resonance can be tuned by doping the patterned material 1111 with organic materials of different compositions.

[0301] In some non-limiting examples, the resonance can be tuned by selecting and / or modifying the patterned material 1111 to have a specific refractive index and / or a specific extraction coefficient.

[0302] In some non-limiting examples, the resonance can be tuned by selecting and / or modifying the material deposited as at least one capping layer 710 to have a specific refractive index and / or a specific extinction coefficient. As a non-limiting example, typical organic CPL materials may have a refractive index in the range of about 1.7-2.0, while SiON, commonly used as a TFE material, is... x It can have a refractive index exceeding approximately 2.4. Meanwhile, SiON... x It may have a high extinction coefficient, which may affect the desired resonance characteristics.

[0303] Those skilled in the art will understand that additional parameters and / or values ​​and / or ranges may become apparent, as they are suited to modulate the resonance imparted by the EM radiation absorbing layer 120 to allow the EM signal 531 to be transmitted through the non-emissive region 1902 of the surface 501 of the display panel 510 at an angle relative to the layer of surface 501 and / or to enhance the absorption of EM radiation incident on the surface 501 of the display panel 510, which, as a non-limiting example, may be visible light.

[0304] Those skilled in the art will understand that while certain values ​​and / or ranges of these parameters may be adapted to adjust the resonance imparted by the EM radiation absorbing layer 120 to enhance the transmission of the EM signal 531 through the non-emissive region 1902 of the display panel 510 at an angle relative to the layer of the surface 501, other values ​​and / or ranges of such parameters may be adapted for purposes other than enhancing the transmission of the EM signal 531, including improving the performance, stability, reliability and / or lifespan of the surface 501, and in some non-limiting examples to ensure the deposition of a suitable second electrode 640 in the second portion 402 of its emitting region 510, thereby promoting the emission of EM radiation.

[0305] In addition, those skilled in the art will understand that other parameters and / or values ​​and / or ranges may exist that are suitable for such other purposes.

[0306] In some non-limiting examples, the vapor flux 1232 of the deposited material 1231 incident on the exposed layer surface 11 of the face 501 within the second portion 402 (i.e., beyond the lateral orientation of the first portion 401), wherein the exposed layer surface 11 of the face 501 is an EM layer patterned coating 210 e The exposed surface of the layer may have a rate and / or duration of a closed coating 1040 on which no deposited material 1231 is formed, even in the absence of an EM layer patterned coating 210. eIn this scenario, in the lateral orientation of the second part 402, the vapor flux 1232 of the deposited material 1231 on the exposed layer surface 11 can also form at least one particulate structure 121 thereon. t This includes, but is not limited to, as a discontinuous layer 130, such as Figure 7A As shown.

[0307] Figure 7B This is an exemplary type 700 of user equipment 500. b A simplified block diagram. On its display panel 700. b In this process, when the vapor flux 1232 of the deposited material 1231 is incident on the surface 11 of the exposed layer, instead of forming a sealing coating 1040 as the second electrode 640 in the second portion 402 as in the surface 501, a particulate structure 121 comprising at least one particle structure can be formed in the second portion 402. t Discontinuous layer 130. In at least one granular structure 121 t In the case of electrical coupling, the discontinuous layer 130 can be used as the second electrode 640.

[0308] In some non-limiting examples, particle structure 121 t The characteristic size, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion may differ from the granular structure of the EM radiation absorbing layer 120 121. d Characteristic size, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion. In some non-limiting examples, particle structure 121 t The feature size is comparable to the granular structure 121 of the EM radiation absorbing layer 120. d The feature size is large. In some non-limiting examples, the particle structure 121 t Surface coverage - comparable EM radiation absorbing layer 120 granular structure 121 d The surface coverage is large. In some non-limiting examples, the particle structure 121 t The deposition density is comparable to the granular structure of EM radiation absorbing layer 120 121. d The sediment density is high.

[0309] In some non-limiting examples, particle structure 121 t Characteristic dimensions, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion can allow for granular structures.121 t Electrical coupling.

[0310] In some non-limiting examples, at least one particulate structure 121 forms a discontinuous layer 130 in the second portion 402 that forms the second electrode 640. tThe feature size may exceed at least one particulate structure 121 of the EM radiation absorbing layer 120 in the first part 401. d The characteristic dimensions.

[0311] In some non-limiting examples, at least one particulate structure 121 forms a discontinuous layer 130 in the second portion 402 that forms the second electrode 640. t The surface coverage can exceed that of at least one particulate structure 121 of the EM radiation absorbing layer 120 in the first part 401. d Surface coverage.

[0312] In some non-limiting examples, the deposition density of the discontinuous layer 130 of the second electrode 640 in the second part 402 may be greater than the deposition density of the EM radiation absorbing layer 120 in the first part 401.

[0313] In some non-limiting examples, at least one particulate structure 121 of the discontinuous layer 130 forming the second electrode 640 may extend partially over the EM layer patterned coating 210 in the transition region 705.

[0314] Figure 7C This is an exemplary type 700 of user equipment 500. c A simplified block diagram. (On display panel 510) b In the middle, it is used to drive the display panel 510 b At least one TFT structure 701 in the emission region 610 of the second part 402 facing laterally is connected to the display panel 510. b The emission region 610 is co-located within the second part 402 facing laterally, and the first electrode 620 extends through the TFT insulating layer 709 to be electrically coupled to the terminal of the power supply 1505 and / or ground via at least one driving circuit incorporating at least one such TFT structure 701.

[0315] In contrast, in display panel 510 c In the second portion 402 of the side-facing surface 501, there is no TFT structure 701 co-located with the emission region 610 it drives. Therefore, the display panel 510 c The first electrode 620 does not extend through the TFT insulating layer 709. Instead, it is used to drive the display panel 510. c At least one TFT structure 701 of the emission region 610 in the laterally oriented second portion 402 is located elsewhere (not shown) within its laterally oriented portion, and the conductive channel 735 is available in the display panel 510. c On the exposed surface 11 of the display panel 510 cThe lateral inward extension extends beyond its second portion 402, and in some non-limiting examples, the surface of this exposed layer may be a TFT insulating layer 709. In some non-limiting examples, the conductive channel 735 may extend across the display panel 510. c At least a portion of the first portion 401 is laterally oriented. In some non-limiting examples, the conductive channel 735 may have an average film thickness to maximize the transmittance of the EM signal 531 passing through it at an angle relative to the layer of surface 501. In some non-limiting examples, the conductive channel 735 may be formed of Cu and / or TCO.

[0316] A series of samples were fabricated to analyze the patterned coating 210 in the EM layer. e The EM radiation absorbing layer 120 formed on the exposed layer surface 11 is characterized by the subsequent exposure of this exposed layer surface 11 to Ag vapor flux 1232.

[0317] By depositing organic materials to provide an EM layer patterned coating on a silicon (Si) substrate 210 e Samples were manufactured. Then, the EM layer was patterned and coated with a 210-layer coating. e The exposed surface 11 is subjected to an Ag vapor flux 1232 until a reference thickness of 8 nm is reached. A patterned coating 210 is then applied to the EM layer. e After the exposed surface 11 is exposed to the vapor flux 1232, a discontinuous layer 130 in the form of Ag discrete particle structure 121 is observed in the EM layer patterned coating 210. e Formation on the exposed layer surface 11.

[0318] The characteristics of this discontinuous layer 130 were characterized by SEM to measure the patterned coating 210 deposited on the EM layer. e The size of the discrete Ag particle structure 121 on the exposed layer surface 11. Specifically, this is determined by observing the patterned coating 210 of the EM layer from above. e The area occupied by the exposed surface 11 was measured, and the average diameter was calculated by fitting the area occupied by each particle structure 121 to a circle with an equivalent area, thereby calculating the average diameter of each particle structure 121. SEM micrographs of the samples are shown in... Figure 9A As shown in the figure, and Figure 9C The distribution of the average diameter obtained from this analysis is shown 910. For comparison, a reference sample was prepared in which 8 nm Ag was directly deposited on a Si substrate. SEM micrographs of this reference sample are shown in... Figure 9B As shown in the figure, and the analysis of this micrograph 920 is also reflected in... Figure 9C middle.

[0319] It can be seen that patterned coating 210 was found in the EM layer. eThe median size of the discrete Ag particle structure 121 on the exposed layer surface 11 is approximately 13 nm, while the median particle size of the Ag film deposited on the Si substrate in the reference sample is approximately 28 nm. The EM layer patterned coating 210, covered by the discrete Ag particle structure 121 of the discontinuous layer 130, was found in the analytical portion of the sample. e The exposed surface area 11 of the sample is about 22.5%, while the exposed surface area 11 of the Si substrate covered by Ag particles in the reference sample is about 48.5%.

[0320] Additionally, using essentially the same process, a patterned coating 210 is deposited on a glass substrate by depositing an EM layer. e A glass sample (Sample B) was prepared with a discontinuous layer 130 of Ag particle structure 121, and the sample was analyzed to determine the effect of the discontinuous layer 130 on the transmittance of the sample. A patterned coating 210 of an EM layer was deposited on the glass substrate. e A comparative glass sample (Comparative Sample A) was fabricated, and another comparative glass sample (Comparative Sample C) was fabricated by directly depositing an 8 nm thick Ag coating on a glass substrate. For each sample, the transmittance of EM radiation at different wavelengths was measured. This transmittance is expressed as the percentage of the intensity of EM radiation detected when EM radiation passes through each sample, and is summarized in Table 4 below:

[0321] Table 4

[0322]

[0323] It can be seen that sample B exhibits a relatively low EM radiation transmittance of approximately 54% at a wavelength of 450 nm in the visible spectrum due to EM radiation absorption caused by the presence of the EM radiation absorbing layer 120, while exhibiting a relatively high EM radiation transmittance of approximately 88% at a wavelength of 850 nm in the NIR spectrum. Since comparative sample A exhibits approximately 90% transmittance at a wavelength of 850 nm, it should be understood that the presence of the EM radiation absorbing layer 120 does not substantially attenuate the transmission of EM radiation (including but not limited to EM signal 531) at this wavelength. Comparative sample C exhibits a relatively low transmittance of 30%-40% in the visible spectrum and a lower transmittance at a wavelength of 850 nm in the NIR spectrum compared to sample B.

[0324] For the purposes of the aforementioned analysis, the size is no more than approximately 10 nm at the 500 nm scale. 2 and at a scale of 200nm, it does not exceed approximately 2.5nm. 2 Small particle structures 121 below the threshold area are ignored because these values ​​are close to the image resolution.

[0325] Cover layer

[0326] In some non-limiting examples, at least one cover layer 710 may be provided in the form of at least one layer of an external coupling and / or encapsulation coating of the display panel 510, including but not limited to an external coupling layer, CPL, TFE layer, polarizing layer, or other physical layers and / or coatings that may be deposited on the display panel 510 as part of a manufacturing process. In some non-limiting examples, at least one cover layer 710 may include lithium fluoride (LiF).

[0327] In some non-limiting examples, the CPL may be deposited on the entire surface of device 200. The function of the CPL is typically to facilitate external coupling of light emitted by device 200, thereby enhancing external quantum efficiency (EQE).

[0328] In some non-limiting examples, at least one capping layer 710 may be deposited at least partially across the lateral extent of surface 501. In some non-limiting examples, it at least partially covers at least one particulate structure 121 of the EM radiation absorbing layer 120 in the first portion 401, and a patterned coating 210 with the EM layer is formed at its exposed layer surface 11. e The interface. In some non-limiting examples, at least one cover layer 710 may also at least partially cover the second electrode 640 in the second portion 402.

[0329] In some non-limiting examples, at least one capping layer 710 may have a high refractive index. In some non-limiting examples, at least one capping layer 710 may have a patterned coating 210 exceeding the EM layer. e The refractive index of .

[0330] In some non-limiting examples, the display panel 510 may be patterned with the EM layer coating 210. e An air gap and / or air interface is provided at the interface of the exposed layer surface 11, whether during or after manufacturing, and / or during operation. Therefore, in some non-limiting examples, such an air gap and / or air interface can be considered as at least one cover layer 710. In some non-limiting examples, the display panel 510 may be provided with both a CPL and an air gap, wherein the EM radiation absorbing coating 120 may be covered by the CPL, and the air gap is disposed on or above the CPL.

[0331] In some non-limiting examples, at least one of the particulate structures 121 of the deposited material 1231 in the EM radiation absorbing layer 120 may be in physical contact with at least one capping layer 710. In some non-limiting examples, substantially all of the particulate structures 121 of the deposited material 1231 in the EM radiation absorbing layer 120 may be in physical contact with at least one capping layer 710.

[0332] Those skilled in the art will understand that additional layers, not shown, may be introduced at various stages of manufacturing.

[0333] In some non-limiting examples, at the interface between the patterned coating 210 containing a low-refractive-index patterned material 1111 and at least one cover layer 710 (including, but not limited to, CPL) containing a material that may have a high refractive index, a thin, dispersed EM radiation absorbing layer 120 of the granular structure 121 in the first portion 401 may enhance the external coupling of at least one EM signal 531 that passes through the signal transmission region 520 of the surface 501 of the display panel 510 at an angle relative to the layer of the surface 501.

[0334] Patterning

[0335] Those skilled in the art will understand that further details will now be described regarding the patterning of the deposited material 1231 using a patterned coating 210 (whether or not for the purpose of forming the EM radiation absorbing layer 120).

[0336] In some non-limiting examples, in the first part 401, the patterned coating 210 (which in some non-limiting examples may be a NIC including patterned material 1111, which in some non-limiting examples may be a NIC material) may be selectively deposited as a sealing coating 1040 on the exposed surface 11 of the lower layer (including but not limited to the substrate 10) of the device 100 only in the first part 401. However, in the second part 402, the exposed surface 11 of the lower layer may be substantially without the sealing coating 1040 of patterned material 1111.

[0337] Patterned coating

[0338] Figure 10 This is a cross-sectional view of a layered semiconductor device 1000. In some non-limiting examples, device 100 may be one type of this device. The patterning coating 210 may include a patterning material 1111. In some non-limiting examples, the patterning coating 210 may include a sealing coating 1040 of the patterning material 1111.

[0339] The patterned coating 210 can provide an exposed layer surface 11 with a relatively low initial adhesion probability to the deposition of the deposited material 1231 (in some non-limiting examples, under the conditions determined in the dual QCM technique described by Walker et al.), in some non-limiting examples, where the initial adhesion probability can be significantly less than the initial adhesion probability to the deposition of the deposited material 1231 of the exposed layer surface 11 of the lower layer of the device 100 (on which the patterned coating 210 has been deposited).

[0340] Due to the low initial adhesion probability of the patterned coating 210 and / or the patterned material 1111 to the deposition of the deposited material 1231 (in some non-limiting examples, when deposited as some form of film and / or coating and under conditions similar to the deposition of the patterned coating 210 within the device 1000), the first portion 401 of the patterned coating 210 may be substantially free of the enclosing coating 1040 of the deposited material 1231.

[0341] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have an initial adhesion probability to the deposition of the deposited material 1231 of at least one of about 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, or 0.0001.

[0342] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have an initial adhesion probability for the deposition of silver (Ag) and / or magnesium (Mg) of at least one of about 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, or 0.0001.

[0343] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have an initial adhesion probability to the deposition of the deposited material 1231 of at least one of the following: 0.15-0.0001, 0.1-0.00 03, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0 .0003, 0.02-0.0005, 0.02-0.0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01 -0.008, 0.008-0.0001, 0.008-0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008 or 0.005-0.001.

[0344] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have an initial adhesion probability for the deposition of the various deposited materials 1231 not greater than a threshold. In some non-limiting examples, such a threshold may be at least one of about 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, or 0.001.

[0345] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have an initial adhesion probability for the deposition of a plurality of deposited materials 1231 selected from at least one of Ag, Mg, ytterbium (Yb), cadmium (Cd), and zinc (Zn) not greater than such a threshold. In some further non-limiting examples, the patterned coating 210 may exhibit an initial adhesion probability for the deposition of a plurality of deposited materials 1231 selected from at least one of Ag, Mg, and Yb equal to or lower than such a threshold.

[0346] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may exhibit an initial adhesion probability equal to or lower than a first threshold for the deposition of the first deposited material 1231, and an initial adhesion probability equal to or lower than a second threshold for the deposition of the second deposited material 1231. In some non-limiting examples, the first deposited material 1231 may be Ag, and the second deposited material 1231 may be Mg. In some other non-limiting examples, the first deposited material 1231 may be Ag, and the second deposited material 1231 may be Yb. In some other non-limiting examples, the first deposited material 1231 may be Yb, and the second deposited material 1231 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0347] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of patterned coating 210 within device 1000) are subjected to a vapor flux 1232 of deposited material 1231, including but not limited to Ag. Figure 12 After that, it can have a transmittance of at least a threshold transmittance value for EM radiation.

[0348] In some non-limiting examples, this transmittance can be measured under typical conditions suitable for depositing electrodes for optoelectronic devices (as a non-limiting example, the cathode of an organic light-emitting diode (OLED) device) after the exposed surface 11 of the patterned coating 210 and / or patterned material 1111 formed as a thin film is exposed to a vapor flux 1232 of the deposited material 1231 (including but not limited to Ag).

[0349] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to a vapor flux 1232 of the deposited material 1231 (including but not limited to Ag) may be as follows: (i) approximately 10 -4 To or 10 -5 (ii) the vacuum pressure of the deposited material 1231 (including but not limited to Ag) and the vapor flux 1232 of about 1 angstrom. The reference deposition rate is substantially consistent with / second, which, as a non-limiting example, can be monitored and / or measured using QCM; and (iii) the exposed layer surface 11 is subjected to a vapor flux 1232 of the deposited material 1231 (including but not limited to Ag) until a reference average layer thickness of about 15 nm is reached, and upon reaching such a reference average layer thickness, the exposed layer surface 11 is not further subjected to a vapor flux 1232 of the deposited material 1231 (including but not limited to Ag).

[0350] In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 1232 of the deposited material 1231 (including but not limited to Ag) may be substantially at room temperature (e.g., about 25°C). In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 1232 of the deposited material 1231 (including but not limited to Ag) may be positioned about 65 cm away from the evaporation source of the evaporating deposited material 1231 (including but not limited to Ag).

[0351] In some non-limiting examples, the threshold transmittance value can be measured at wavelengths in the visible spectrum. As a non-limiting example, the threshold transmittance value can be measured at a wavelength of approximately 460 nm. In some non-limiting examples, the threshold transmittance value can be measured at wavelengths in the IR and / or NIR spectra. As a non-limiting example, the threshold transmittance value can be measured at wavelengths of approximately 700 nm, 900 nm, or approximately 1000 nm. In some non-limiting examples, the threshold transmittance value can be expressed as the percentage of incident EM power that can be transmitted through the sample. In some non-limiting examples, the threshold transmittance value can be at least one of at least about 60%, 65%, 70%, 75%, 80%, 85%, or 90%.

[0352] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the deposition of the deposited material 1231 to the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as a film and / or layer in some form and under conditions similar to the deposition of the patterned coating 210 within the device 1000) and the average layer thickness of the deposited material 1231 thereon.

[0353] Those skilled in the art will understand that high transmittance typically indicates the absence of a sealing coating 1040 of deposited material 1231, which, as a non-limiting example, could be Ag. On the other hand, low transmittance typically indicates the presence of a sealing coating 1040 of deposited material 1231 (including but not limited to Ag, Mg, and / or Yb), because the metal film (especially when formed as a sealing coating 1040) can exhibit high absorption of EM radiation.

[0354] It can be further assumed that the exposed layer surface 11 exhibiting a low initial adhesion probability relative to the deposited material 1231 (including but not limited to Ag, Mg and / or Yb) can exhibit high transmittance. On the other hand, the exposed layer surface 11 exhibiting a high adhesion probability relative to the deposited material 1231 (including but not limited to Ag, Mg and / or Yb) can exhibit low transmittance.

[0355] A series of samples were fabricated to measure the transmittance of the exemplary material and to visually observe whether an Ag-sealing coating 1040 had formed on the exposed surface 11 of this exemplary material. This was achieved by depositing an exemplary material coating approximately 50 nm thick on a glass substrate, followed by subjecting the exposed surface 11 of the coating to approximately... Each sample was prepared by applying an Ag vapor flux of 1232 at a rate of / second until a reference layer thickness of approximately 15 nm was achieved. Each sample was then visually analyzed, and the transmittance through each sample was measured.

[0356] The molecular structure of the exemplary material used in the samples described in this paper is as follows:

[0357] Table 5

[0358]

[0359]

[0360]

[0361]

[0362] The presence of a substantially closed Ag-formed coating 1040 in the sample was visually confirmed, and the presence of this coating in the sample was further confirmed by measuring the transmittance through the sample, which showed a transmittance of no more than about 50% at a wavelength of about 460 nm.

[0363] The samples that did not form the Ag-sealing coating 1040 were also identified, and the absence of this coating in these samples was further confirmed by measuring the transmittance through the samples, which showed a transmittance of over 70% at a wavelength of approximately 460 nm.

[0364] The results are summarized below:

[0365] Table 6

[0366] Material A sealed coating for Ag? HT211 exist HT01 exist TAZ exist Balq exist Liq exist Exemplary Material 1 exist Exemplary Material 2 exist Exemplary Material 3 Does not exist Exemplary Material 4 Does not exist Exemplary Material 5 Does not exist Exemplary Material 6 Does not exist Exemplary Material 7 Does not exist Exemplary Material 8 Does not exist Exemplary Material 9 Does not exist

[0367] Based on the foregoing, it has been found that the materials used in the first 7 samples in Tables 5 and 6 (HT211 to exemplary material 2) may not be well-suited to inhibit the deposition of material 1231 (including but not limited to Ag and / or Ag-containing materials) on them.

[0368] On the other hand, it has been found that exemplary materials 3 to 9 may be adapted (at least in some non-limiting applications) to serve as a patterned coating 210 for inhibiting the deposition of deposited material 1231 (including but not limited to Ag and / or Ag-containing materials) thereon.

[0369] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or layer and under conditions similar to the deposition of the patterned coating within the device 1000) may have a surface energy not greater than at least one of about 24 dynes / cm, 22 dynes / cm, 20 dynes / cm, 18 dynes / cm, 16 dynes / cm, 15 dynes / cm, 13 dynes / cm, 12 dynes / cm or 11 dynes / cm.

[0370] In some non-limiting examples, the surface energy may be at least one of about 6 dynes / cm, 7 dynes / cm or 8 dynes / cm.

[0371] In some non-limiting examples, the surface energy may be at least one of about 10 dynes / cm to 20 dynes / cm or 13 dynes / cm to 19 dynes / cm.

[0372] In some non-limiting examples, the critical surface tension of the surface can be determined according to the Zissman method, as further detailed in WAZisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0373] As a non-limiting example, a series of samples were fabricated to measure the critical surface tension of surfaces formed from various materials. The measurement results are summarized below:

[0374] Table 7

[0375] Material Critical surface tension (dynes / cm) HT211 25.6 HT01 >24 TAZ 22.4 BAlq 25.9 Liq 24 Exemplary Material 1 26.3 Exemplary Material 2 24.8 Exemplary Material 3 19 Exemplary Material 4 7.6 Exemplary Material 5 15.9 Exemplary Material 6 <20 Exemplary Material 7 13.1 Exemplary Material 8 20 Exemplary Material 9 18.9

[0376] Based on the aforementioned measurements of the critical surface tension in Table 7 and previous observations regarding the substantially closed coating 1040 with or without Ag, it has been found that materials that form low surface energy surfaces when deposited as coatings (as a non-limiting example, materials with a critical surface tension of at least one between about 13 dynes / cm and 20 dynes / cm or between 13 dynes / cm and 19 dynes / cm) are suitable for forming patterned coatings 210 to inhibit the deposition of deposited materials 1231 (including but not limited to Ag and / or Ag-containing materials) thereon.

[0377] Without wishing to be bound by any particular theory, it can be assumed that materials forming surfaces with surface energies below (as a non-limiting example) of about 13 dynes / cm may be less suitable as patterning materials in certain applications 1111, because such materials may exhibit relatively poor adhesion to layers surrounding such materials, exhibit low melting points, and / or exhibit low sublimation temperatures.

[0378] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or coating and in an environment similar to the deposition of the patterned coating 210 within the device 1000) may have a low refractive index.

[0379] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or coating and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have a refractive index not greater than at least one of about 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32 or 1.3 for EM radiation at a wavelength of 550 nm.

[0380] Without being bound by any particular theory, it has been observed that providing a patterned coating 210 with a low refractive index can (at least in some devices 100) increase the transmission of external EM radiation through its second portion 402. As a non-limiting example, when the patterned coating 210 has a low refractive index, a device 1000 including an air gap (which may be arranged near or adjacent to the patterned coating 210) can exhibit higher transmittance compared to a similarly constructed device in which such a low refractive index patterned coating 210 is not provided.

[0381] As a non-limiting example, a series of samples were fabricated to measure the refractive index of coatings formed from some of a variety of exemplary materials at a wavelength of 550 nm. The measurement results are summarized below:

[0382] Table 8

[0383] Material Refractive index HT211 1.76 HT01 1.80 TAZ 1.69 BAlq 1.69 Liq 1.64 Exemplary Material 2 1.72 Exemplary Material 3 1.37 Exemplary Material 5 1.38 Exemplary Material 7 1.3

[0384] Based on the aforementioned measurements of refractive index in Table 8 and previous observations in Table 6 regarding substantially closed coatings 1040 with or without Ag, it has been found that materials forming low-refractive-index coatings (as a non-limiting example, materials with a refractive index not exceeding at least one of about 1.4 or 1.38) are suitable for forming patterned coatings 210 to suppress the deposition of deposited materials 1231 (including but not limited to Ag and / or Ag-containing materials) thereon.

[0385] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or coating and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have an extinction coefficient of not more than about 0.01 for photons at at least one of wavelengths of at least about 600 nm, 500 nm, 460 nm, 420 nm or 410 nm.

[0386] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or coating and in an environment similar to the deposition of the patterned coating 210 within the device 1000) may substantially not attenuate the EM radiation passing through it in at least the visible spectrum.

[0387] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (when deposited as some form of film and / or coating and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may substantially not attenuate the EM radiation passing through it in at least the IR and / or NIR spectra.

[0388] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or coating and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have an extinction coefficient of at least 0.05, 0.1, 0.2, or 0.5 for EM radiation at wavelengths shorter than at least one of at least about 400 nm, 390 nm, 380 nm, or 370 nm. In this way, the patterned coating 210 and / or the patterned material 1111 (when deposited as some form of film and / or coating and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may absorb EM radiation in the UVA spectrum incident on the device 1000, thereby reducing the possibility that EM radiation in the UVA spectrum may impart undesirable effects on device performance, device stability, device reliability, and / or device lifetime.

[0389] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 (in some non-limiting examples, when deposited as some form of film and / or coating and under conditions similar to the deposition of the patterned coating 210 within the device 1000) may have a glass transition temperature not greater than at least one of about 300°C, 150°C, 130°C, 30°C, 0°C, -30°C, or -50°C.

[0390] In some non-limiting examples, the patterned material 1111 may have a sublimation temperature of at least one of about 100°C-320°C, 120°C-300°C, 140°C-280°C, or 150°C-250°C. In some non-limiting examples, such a sublimation temperature may allow the patterned material 1111 to be easily deposited as a coating using PVD.

[0391] The sublimation temperature of a material can be determined using a variety of methods that are readily apparent to those skilled in the art, including but not limited to heating the material in a crucible under high vacuum and measuring the achievable temperature.

[0392] • Observe when the material begins to deposit on the surface of the QCM, which is mounted at a fixed distance from the crucible;

[0393] • Observe a specific deposition rate on the surface of a QCM mounted at a fixed distance from the crucible, as a non-limiting example, of 0.1 / s; and / or

[0394] • The threshold vapor pressure of the material is reached, as a non-limiting example, approximately 10. -4 Or 10 -5 Entrust.

[0395] In some non-limiting examples, the sublimation temperature of the material can be determined by operating in a high vacuum environment (as a non-limiting example, about 10 °C). -4 The material in the evaporation source was heated under a pressure of (T), and the amount of material evaporation that could be achieved was sufficient to induce material deposition (as a non-limiting example, approximately...). The temperature of the vapor flux (deposited at a deposition rate of / second onto the surface of a QCM installed at a fixed distance from the source) is [missing information].

[0396] In some non-limiting examples, in order to determine the sublimation temperature, the QCM can be installed at a distance of approximately 65 cm from the crucible.

[0397] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 may contain fluorine (F) atoms and / or silicon (Si) atoms. As a non-limiting example, the patterned material 1111 used to form the patterned coating 210 may be a compound containing F and / or Si.

[0398] In some non-limiting examples, patterned material 1111 may include a compound containing F. In some non-limiting examples, patterned material 1111 may include a compound containing F and carbon (C) atoms. In some non-limiting examples, patterned material 1111 may include a compound containing F and C, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least one of at least 1, 1.5, or 2. In some non-limiting examples, the atomic ratio of F to C may be determined by counting all F atoms present in the compound structure, and for C atoms, only counting sp atoms present in the compound structure. 3 The hybrid C atoms are counted. In some non-limiting examples, the patterned material 1111 may include a compound that includes F and C portions as part of its molecular substructure, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least about 1, 1.5, or 2.

[0399] In some non-limiting examples, the compound of patterned material 1111 may include an organic-inorganic hybrid material.

[0400] In some non-limiting examples, the patterned material 1111 may be an oligomer or include oligomers.

[0401] In some non-limiting examples, the patterning material 1111 may be or include a compound having a molecular structure comprising a backbone and at least one functional group bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic portion, and the at least one functional group may be an organic portion.

[0402] In some non-limiting examples, this compound may have a molecular structure including a siloxane group. In some non-limiting examples, the siloxane group may be a straight-chain, branched, or cyclic siloxane group. In some non-limiting examples, the main chain may be a siloxane group or include a siloxane group. In some non-limiting examples, the main chain may be a siloxane group or include a siloxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of this compound include fluorosiloxanes. Non-limiting examples of this compound are Exemplary Material 6 and Exemplary Material 9.

[0403] In some non-limiting examples, the compound may have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the main chain may be a silsesquioxane group or include a silsesquioxane group. In some non-limiting examples, the main chain may be a silsesquioxane group or include a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorosilsesquioxanes and / or fluoroPOSS. A non-limiting example of such a compound is Exemplary Material 8.

[0404] In some non-limiting examples, the compound may have a molecular structure comprising substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups. In some non-limiting examples, the aryl group may be phenyl or naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (as a non-limiting example, O, N, and / or S) to derive a heteroaryl group. In some non-limiting examples, the main chain may be or include substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups. In some non-limiting examples, the main chain may be or include substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0405] In some non-limiting examples, the compound may have a molecular structure including substituted or unsubstituted straight-chain, branched, or cyclic hydrocarbon groups. In some non-limiting examples, one or more C atoms of the hydrocarbon group may be substituted with heteroatoms (as a non-limiting example, O, N, and / or S).

[0406] In some non-limiting examples, the compound may have a molecular structure including a phosphazene group. In some non-limiting examples, the phosphazene group may be a straight-chain, branched, or cyclic phosphazene group. In some non-limiting examples, the main chain may be a phosphazene group or include a phosphazene group. In some non-limiting examples, the main chain may be a phosphazene group or include at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorophosphazenes. A non-limiting example of such a compound is exemplary material 4.

[0407] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer containing F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorinated oligomer. In some non-limiting examples, the compound may be a block oligomer containing F. Non-limiting examples of fluoropolymers and / or fluorinated oligomers are those having the molecular structures of exemplary material 3, exemplary material 5, and / or exemplary material 7.

[0408] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain F. In some non-limiting examples, the organometallic complex may include at least one ligand containing F. In some non-limiting examples, the at least one ligand containing F may be a fluoroalkyl group or include a fluoroalkyl group.

[0409] In some non-limiting examples, the patterned material 1111 may be an organic-inorganic hybrid material or include organic-inorganic hybrid materials.

[0410] In some non-limiting examples, the patterned material 1111 may include a variety of different materials.

[0411] In some non-limiting examples, the molecular weight of the compound of patterned material 1111 may not be greater than at least one of about 5,000 g / mol, 4,500 g / mol, 4,000 g / mol, 3,800 g / mol or 3,500 g / mol.

[0412] In some non-limiting examples, the molecular weight of the compound of patterned material 1111 may be at least one of about 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol or 2,500 g / mol.

[0413] Without wishing to be bound by any particular theory, it can be assumed that for compounds suitable for forming surfaces with relatively low surface energy, there may be targets where, in at least some applications, such compounds have a molecular weight of at least one of about 1,500 g / mol to 5,000 g / mol, 1,500 g / mol to 4,500 g / mol, 1,700 g / mol to 4,500 g / mol, 2,000 g / mol to 4,000 g / mol, 2,200 g / mol to 4,000 g / mol, or 2,500 g / mol to 3,800 g / mol.

[0414] Without wishing to be bound by any particular theory, it may be assumed that such compounds may exhibit at least one property that is likely applicable to the formation of coatings and / or layers having the following characteristics: (i) a relatively high melting point, for example, at least 100 °C; (ii) a relatively low surface energy; and / or (iii) a substantially amorphous structure, for example, when deposited using a vacuum-based thermal evaporation process.

[0415] In some non-limiting examples, the percentage of the molar weight of this compound attributable to the presence of F atoms may be at least one of about 40%-90%, 45%-85%, 50%-80%, 55%-75%, or 60%-75%. In some non-limiting examples, F atoms may constitute the majority of the molar weight of this compound.

[0416] In some non-limiting examples, the patterned coating 210 may be patterned, the pattern being defined by at least one region of a closed coating 1040 in which there may be substantially no patterned coating 210. In some non-limiting examples, the at least one region may separate the patterned coating 210 into a plurality of discrete segments thereof. In some non-limiting examples, the plurality of discrete segments of the patterned coating 210 may be physically spaced apart from each other in their lateral orientation. In some non-limiting examples, the plurality of discrete segments of the patterned coating 210 may be arranged in a regular structure (including, but not limited to, an array or matrix), such that in some non-limiting examples, the discrete segments of the patterned coating 210 may repeat a pattern construction.

[0417] In some non-limiting examples, at least one of the plurality of discrete segments of the patterned coating 210 may each correspond to the emission region 610.

[0418] In some non-limiting examples, the aperture ratio of the emission region 610 may not be greater than at least one of about 50%, 40%, 30% or 20%.

[0419] In some non-limiting examples, the patterned coating 210 may be formed as a single monolithic coating.

[0420] In some non-limiting examples, due to the patterning material 1111 used and / or the deposition environment, the patterning coating 210 may have and / or provide (including but not limited to) at least one nucleation site for the deposited material 1231.

[0421] In some non-limiting examples, the patterned coating 210 may be doped, covered, and / or supplemented with another material that can act as a seed or heterogeneous material to serve as such nucleation sites for the deposited material 1231. In some non-limiting examples, such other materials may include NPC 1420 material. In some non-limiting examples, such other materials may include organic materials (such as, as a non-limiting example, polycyclic aromatic compounds) and / or materials containing non-metallic elements (such as, but not limited to, at least one of O, S, N, or C, which may be present in the source material, the equipment used for deposition, and / or contaminants in the vacuum chamber environment). In some non-limiting examples, such other materials may be deposited as a single layer of a small fraction of the layer thickness to avoid forming its sealing coating 1040. Instead, the monomers of such other materials may tend to be spaced apart in the lateral orientation to form discrete nucleation sites for the deposited material.

[0422] In some non-limiting examples, the patterned coating 210 may serve as an optical coating. In some non-limiting examples, the patterned coating 210 may modify at least one property and / or characteristic of the EM radiation (including, but not limited to, photon forms) emitted by the device 1000. In some non-limiting examples, the patterned coating 210 may exhibit a degree of haze, resulting in the scattering of the emitted EM radiation. In some non-limiting examples, the patterned coating 210 may include a crystalline material for scattering EM radiation transmitted through it. In some non-limiting examples, such scattering of EM radiation may facilitate enhanced external coupling of EM radiation from the device. In some non-limiting examples, the patterned coating 210 may initially be deposited as a substantially amorphous (including, but not limited to, substantially amorphous) coating, and subsequently, after its deposition, the patterned coating 210 may become crystalline and subsequently used for optical coupling.

[0423] Materials suitable for providing NICs typically have low surface energy when deposited on a surface as a thin film or coating. Materials with low surface energy generally exhibit low intermolecular forces. Materials with low intermolecular forces typically exhibit low melting points. Generally, because the physical properties of coatings or materials with low melting points change at operating temperatures close to the material's melting point, such materials may not be suitable for some applications requiring high-temperature reliability (up to 60°C, 85°C, or 100°C, as non-limiting examples). As a non-limiting example, a material with a melting point of 120°C may not be suitable for applications requiring high-temperature reliability up to 100°C. Therefore, materials with higher melting points may be ideal, at least in some applications requiring high-temperature reliability. Without wishing to be bound by any particular theory, it is now assumed that materials with relatively high surface energy may be useful, at least in some applications that may require high-temperature reliability.

[0424] Materials with low intermolecular forces typically exhibit low sublimation temperatures. In at least some applications, a low sublimation temperature may not be desirable because it may be unsuitable for certain manufacturing processes requiring a high degree of control over the thickness of the deposited film. As a non-limiting example, for materials with sublimation temperatures below about 140°C, 120°C, 110°C, 100°C, or 90°C, it may be difficult to control the deposition rate and layer thickness of films deposited using vacuum thermal evaporation or other methods in the art. Therefore, materials with higher sublimation temperatures can be used in at least some applications requiring a high degree of control over film thickness. Without wishing to be bound by any particular theory, it is now assumed that materials with relatively high surface energy are useful, at least in some applications where a high degree of control over film thickness is desired.

[0425] Typically, materials with low surface energy can exhibit large or wide optical band gaps, which, as a non-limiting example, may correspond to the HOMO-LUMO band gap of the material. At least some materials with large or wide optical band gaps and / or HOMO-LUMO band gaps can exhibit relatively weak photoluminescence or no photoluminescence in the visible, deep blue, and / or near-UV wavelength ranges of the electromagnetic spectrum. As a non-limiting example, such materials can exhibit weak photoluminescence or no photoluminescence when subjected to radiation with a wavelength of approximately 365 nm, a common wavelength for radiation sources used in fluorescence microscopy. The presence of such materials, particularly when, for example, as thin film deposition, can be challenging to detect using standard optical detection techniques such as fluorescence microscopy due to their weak or no photoluminescence. This can be particularly problematic for applications, such as selectively depositing materials on one or more portions of a substrate using a fine metal mask, where it may be desirable to determine the presence of one or more portions of the material after deposition. Therefore, materials with relatively small HOMO-LUMO band gaps can be used in applications where it is desirable to detect material films using optical techniques. Therefore, materials with high surface energy may be ideal for such applications that use optical techniques to inspect material films.

[0426] In at least some applications, it is also desirable to provide a patterned coating that, when subjected to a vapor flux of a deposited material, forms a discontinuous coating containing a particulate structure. In at least some applications, it may also be desirable for the patterned coating to exhibit a sufficiently low initial adhesion probability such that a substantially closed coating of the deposited material is formed in a second portion not coated by the patterned coating, while a discontinuous coating containing a particulate structure having at least one characteristic is formed in a first portion of the patterned coating. In at least some applications, it may be desirable to form a discontinuous film or particulate structure of the deposited material in the second portion. As a non-limiting example, the deposited material may be a metal or metal alloy, while a substantially closed thin film coating of the deposited material having a thickness of, for example, less than about 100 nm, 50 nm, 25 nm, or 15 nm is deposited. In some non-limiting examples, the relative amount of deposited material deposited as a discontinuous film or particulate structure in the first part may correspond to about 1%-50%, 2%-25%, 5%-20%, or 7%-10% of the amount of deposited material deposited as a substantially closed coating in the second part. As a non-limiting example, the substantially closed coating may correspond to a thickness of less than about 100 nm, 75 nm, 50 nm, 25 nm, or 15 nm.

[0427] Without wishing to be bound by any particular theory, the inventors have now discovered that patterned coatings comprising materials exhibiting relatively high surface energy when deposited as thin films can be used in at least some applications where it is desirable to form a discontinuous film or particulate structure of the deposited material in a first part and a substantially closed coating of the deposited material in a second part, particularly where the thickness of the substantially closed coating (as a non-limiting example) is less than about 100 nm, 75 nm, 50 nm, 25 nm or 15 nm.

[0428] In some non-limiting examples, the patterned coating 210 and / or the patterned coating comprises at least two materials. In some non-limiting examples, the patterned coating 210 comprises a first material and a second material.

[0429] In some non-limiting examples, when deposited as a thin film, at least one of the materials of the patterned coating 210 and / or the patterned coating forms a NIC.

[0430] In some non-limiting examples, at least one of the materials of the patterned coating 210 forms a NIC when deposited as a thin film, and another material of the patterned coating 210 forms an NPC when deposited as a thin film. In some non-limiting examples, a first material forms an NPC when deposited as a thin film, and a second material forms a NIC when deposited as a thin film. In some non-limiting examples, the presence of the first material in the patterned coating 210 may result in an increased initial adhesion probability of the patterned coating 210 compared to a case where the patterned coating 210 is formed of the second material and the first material is substantially absent.

[0431] In some non-limiting examples, at least one of the materials of the patterned coating 210 is adapted to form a surface with low surface energy when deposited as a thin film. In some non-limiting examples, when deposited as a thin film, the first material is adapted to form a surface with a lower surface energy than that provided by a thin film composed of the second material.

[0432] In some non-limiting examples, the patterned coating 210 exhibits photoluminescence. This can be achieved, for example, by including a material exhibiting photoluminescence in the patterned coating 210.

[0433] In some non-limiting examples, the patterned coating 210 exhibits photoluminescence at wavelengths corresponding to the UV and / or visible portions of the electromagnetic spectrum. In some non-limiting examples, photoluminescence may be located at wavelengths corresponding to the UV spectrum, including but not limited to UVA corresponding to wavelengths from about 315 nm to about 400 nm, and / or UVB corresponding to wavelengths from about 280 nm to about 315 nm. In some non-limiting examples, photoluminescence may be located at wavelengths corresponding to the visible portion of the electromagnetic spectrum, which may correspond to wavelengths from about 380 nm to about 740 nm. In some non-limiting examples, photoluminescence may be located at wavelengths corresponding to deep blue or near-UV.

[0434] In some non-limiting examples, the first material has a first optical bandgap, and the second material has a second optical bandgap. The second optical bandgap is larger than the first optical bandgap. In some non-limiting examples, the difference between the first and second optical bandgap is greater than about 0.3 eV, greater than about 0.5 eV, greater than about 0.7 eV, greater than about 1 eV, greater than about 1.3 eV, greater than about 1.5 eV, greater than about 1.7 eV, greater than about 2 eV, greater than about 2.5 eV, and / or greater than about 3 eV.

[0435] In some non-limiting examples, the first optical bandgap is less than about 4.1 eV, less than about 3.5 eV, or less than about 3.4 eV. In some non-limiting examples, the second optical bandgap is greater than about 3.4 eV, greater than about 3.5 eV, greater than about 4.1 eV, greater than about 5 eV, or greater than about 6.2 eV.

[0436] In some non-limiting examples, the first optical bandgap and / or the second optical bandgap correspond to the HOMO-LUMO bandgap.

[0437] In some non-limiting examples, the first material exhibits photoluminescence at wavelengths corresponding to the UV and / or visible portions of the electromagnetic spectrum. In some non-limiting examples, photoluminescence may be located at wavelengths corresponding to the UV spectrum, including but not limited to UVA corresponding to wavelengths from about 315 nm to about 400 nm, and / or UVB corresponding to wavelengths from about 280 nm to about 315 nm. In some non-limiting examples, photoluminescence may be located at wavelengths corresponding to the visible portion of the electromagnetic spectrum, which may correspond to wavelengths from about 380 nm to about 740 nm. In some non-limiting examples, photoluminescence may be located at wavelengths corresponding to deep blue.

[0438] In some non-limiting examples, the first material exhibits photoluminescence at wavelengths corresponding to the visible portion of the electromagnetic spectrum, and the second material exhibits substantially no photoluminescence at any wavelength corresponding to the visible portion of the electromagnetic spectrum.

[0439] In some non-limiting examples, at least one of the materials of the patterned coating 210 exhibits photoluminescence, and at least one of the materials includes conjugated bonds, aryl moieties, electron-donating / electron-withdrawing groups, and / or heavy metal complexes.

[0440] As a non-limiting example, photoluminescence of coatings and / or materials can be observed via a photoexcitation process. During photoexcitation, the coating and / or material is subjected to radiation emitted by a light source, such as a UV lamp. When the radiation emitted by the light source is absorbed by the coating and / or material, electrons in the coating and / or material are temporarily excited. Following excitation, one or more relaxation processes, including but not limited to fluorescence and phosphorescence, may occur, resulting in the emission of light from the coating and / or material. The light emitted from the coating and / or material during this process can be detected, for example, by a photodetector to characterize the photoluminescent properties of the coating and / or material. As used herein, the wavelength of photoluminescence associated with a coating and / or material generally refers to the wavelength of light emitted by such coating and / or material due to the relaxation of electrons from an excited state. As those skilled in the art will understand, the wavelength of light emitted by the coating and / or material due to the photoexcitation process is generally longer than the wavelength of the radiation used to initiate the photoexcitation. Various techniques known in the art can be used to detect and / or characterize photoluminescence, including but not limited to fluorescence microscopy. As used herein, a photoluminescent coating or photoluminescent material is a coating or material that exhibits photoluminescence at a specific wavelength when irradiated with excitation radiation of a certain wavelength. In some non-limiting examples, when irradiated with excitation radiation having a wavelength of 365 nm, the photoluminescent coating or material may exhibit photoluminescence at wavelengths greater than about 365 nm. Photoluminescent coatings can be detected on a substrate using standard optical techniques such as fluorescence microscopy, which can be used to quantify, measure, or inspect the presence of such coatings or materials.

[0441] In some non-limiting examples, the optical band gaps of various coatings and / or materials (including, as non-limiting examples, a first optical band gap and / or a second optical band gap) may correspond to the band gaps of the coatings and / or materials from which photons are absorbed or emitted during the photoexcitation process.

[0442] In some non-limiting examples, photoluminescence is detected and / or characterized by subjecting the coating and / or material to radiation having a wavelength corresponding to the UV portion of the electromagnetic spectrum (such as UVA or UVB, as non-limiting examples). In some non-limiting examples, the radiation used to induce photoexcitation has a wavelength of approximately 365 nm.

[0443] In some non-limiting examples, the second material exhibits substantially no photoluminescence at any wavelength corresponding to the visible portion of the electromagnetic spectrum. In some non-limiting examples, the second material does not exhibit photoluminescence when subjected to radiation with wavelengths of about 300 nm, 320 nm, 350 nm, and / or 365 nm or longer. As a non-limiting example, the second material may exhibit a negligible and / or undetectable amount of absorption when subjected to such radiation. In some non-limiting examples, the second optical bandgap of the second material may be wider than the photon energy of the radiation emitted by the light source, such that the second material does not undergo photoexcitation when subjected to such radiation. However, the patterned coating 210 containing such a second material may still exhibit photoluminescence when subjected to such radiation, due to the photoluminescence exhibited by the first material. In this way, for example, when depositing the patterned coating 210, the presence of the patterned coating 210 can be easily detected and / or observed using conventional characterization techniques such as fluorescence microscopy.

[0444] In some non-limiting examples, the concentration (e.g., by weight) of the first material in the patterned coating 210 is less than the concentration of the second material in the patterned coating 210. In some non-limiting examples, the patterned coating 210 may contain about 0.1% or more, 0.2% or more, 0.5% or more, 0.8% or more, 1% or more, 3% or more, 5% or more, 8% or more, 10% or more, 15% or more, or 20% or more of the first material. In some non-limiting examples, the patterned coating 210 may contain about 50% or less, about 40% or less, about 30% or less, about 25% or less, about 20% or less, about 15% or less, about 10% or less, about 8% or less, about 5% or less, about 3% or less, or about 1% or less of the first material. In some non-limiting examples, the remainder of the patterned coating 210 may consist substantially of the second material. In some non-limiting examples, the patterned coating 210 may contain additional materials, such as a third and / or a fourth material, as non-limiting examples.

[0445] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) comprises at least one of fluorine (F) atoms and silicon (Si) atoms. As a non-limiting example, at least one of the first material and the second material comprises at least one of F and Si. In some further non-limiting examples, the first material comprises F and / or Si, and the second material comprises F and / or Si. In some non-limiting examples, both the first material and the second material comprise F. In some non-limiting examples, both the first material and the second material comprise Si. In some non-limiting examples, each of the first material and the second material comprises F and / or Si.

[0446] In some non-limiting examples, at least one of the first and second materials contains both F and Si. In some non-limiting examples, one of the first and second materials does not contain F and / or Si. In some non-limiting examples, the second material contains F and / or Si, and the first material does not contain F and / or Si.

[0447] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the other materials of the patterned coating 210 contains sp. 2 Carbon. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the other materials of the patterned coating 210 contains sp. 3 Carbon. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and sp. 3 Carbon, and at least one of the other materials in the patterned coating 210 containing sp 2 Carbon. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and sp. 3 Carbon, in which all F atoms bonded to carbon (C) are bonded to sp. 3 Carbon, and at least one of the other materials in the patterned coating 210 containing sp 2 Carbon. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and sp. 3 Carbon, in which all F bonds to C are bonded to sp 3 Carbon, and at least one of the other materials in the patterned coating 210 containing sp 2Carbon and does not contain F. As a non-limiting example, in any of the foregoing non-limiting examples, "at least one of the materials of the patterned coating 210" may correspond to the second material, and "at least one of the other materials of the patterned coating 210" may correspond to the first material.

[0448] As the technicians will understand, this includes F, sp 2 Carbon, sp 3 The presence of materials in the coating of carbon, aromatic hydrocarbon portions and / or other functional groups or portions can be detected using a variety of methods known in the art, including, as a non-limiting example, X-ray photoelectron spectroscopy (XPS).

[0449] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the other materials of the patterned coating 210 contains an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the materials of the patterned coating 210 does not contain an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and does not contain an aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 210 contains an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and does not contain an aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 210 contains an aromatic hydrocarbon portion and does not contain F. Non-limiting examples of aromatic hydrocarbon moieties include substituted polycyclic aromatic hydrocarbon moieties, unsubstituted polycyclic aromatic hydrocarbon moieties, substituted phenyl moieties, and unsubstituted phenyl moieties.

[0450] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon (PAH) portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the materials of the patterned coating 210 does not contain a PAH portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and does not contain a PAH portion, and at least one of the other materials of the patterned coating 210 contains a PAH portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and does not contain a PAH portion, and at least one of the other materials of the patterned coating 210 contains a PAH portion and does not contain F.

[0451] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) comprises at least one of a fluorocarbon portion and a siloxane portion, and at least one of the other materials of the patterned coating 210 comprises a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) comprises at least one of a fluorocarbon portion and a siloxane portion, and at least one of the materials of the patterned coating 210 does not comprise a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) comprises at least one of a fluorocarbon portion and a siloxane portion and does not comprise a polycyclic aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 210 comprises a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains at least one of a fluorocarbon compound portion and a siloxane portion and does not contain a polycyclic aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon portion and does not contain a fluorocarbon compound portion or a siloxane portion.

[0452] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the other materials of the patterned coating 210 contains a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F, and at least one of the materials of the patterned coating 210 does not contain a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and does not contain a phenyl portion, and at least one of the other materials of the patterned coating 210 contains a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains F and does not contain a phenyl portion, and at least one of the other materials of the patterned coating 210 contains a phenyl portion and does not contain F.

[0453] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) comprises at least one of a fluorocarbon compound portion and a siloxane portion, and at least one of the other materials of the patterned coating 210 comprises a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) comprises at least one of a fluorocarbon compound portion and a siloxane portion, and at least one of the materials of the patterned coating 210 does not comprise a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) comprises at least one of a fluorocarbon compound portion and a siloxane portion and does not comprise a phenyl portion, and at least one of the other materials of the patterned coating 210 comprises a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) contains at least one of a fluorocarbon compound portion and a siloxane portion and does not contain a phenyl portion, and at least one of the other materials of the patterned coating 210 contains a phenyl portion and does not contain a fluorocarbon compound portion or a siloxane portion.

[0454] Typically, the molecular structures and / or molecular compositions of the materials of the patterned coating 210 (which may be, for example, a first material and a second material) are different from each other. In some non-limiting examples, these materials may be selected such that they have at least one property that is substantially similar to or different from each other. Non-limiting examples of such properties and / or characteristics include: (1) the molecular structure of monomers, monomer backbones and / or functional groups; (2) the presence of common elements; (3) similarity of molecular structures; (4) characteristic surface energy; (5) refractive index; (6) molecular weight; and / or (7) thermal properties, including but not limited to melting temperature, sublimation temperature, glass transition temperature and / or thermal decomposition temperature.

[0455] As used herein, particularly with respect to the materials in question, characteristic surface energy generally refers to the surface energy measured from such material. For example, characteristic surface energy can be measured from a surface formed by a material deposited and / or coated in the form of a thin film. Various methods and theories for determining the surface energy of solids are known. For example, surface energy can be calculated and / or derived based on a series of contact angle measurements, where various liquids are brought into contact with a solid surface to measure the contact angle between the liquid-gas interface and the surface. In some non-limiting examples, the surface energy of a solid surface is equal to the surface tension of the liquid that has the highest surface tension to fully wet the surface. For example, a Zissman diagram can be used to determine the highest surface tension value that will result in full wetting of the surface (i.e., a 0° contact angle).

[0456] The sublimation temperature of a material can be determined using various methods known in the art. As a non-limiting example, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and then determining the temperature required to observe the initiation of deposition of the material on a quartz crystal microbalance mounted at a fixed distance from the source. In some non-limiting examples, to determine the sublimation temperature, the quartz crystal microbalance can be mounted approximately 65 cm from the source. In some non-limiting examples, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and then measuring the temperature required to observe a specific deposition rate (as a non-limiting example, 0.1 A / sec) on a quartz crystal microbalance mounted at a fixed distance from the crucible (as a non-limiting example, approximately 65 cm from the source). In some non-limiting examples, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and then determining the temperature required to reach the threshold vapor pressure of the material. As a non-limiting example, this threshold vapor pressure can be approximately 10 E. -4 Tor or 10E -5 In some non-limiting examples, the sublimation temperature of the material can be determined as follows: at approximately 10°C. -4In a high-vacuum environment, the material is heated in an evaporation source, and the temperature required to cause the material to evaporate and thus generate a vapor flux sufficient to cause the material to deposit at a rate of about 0.1 Å / s onto a surface positioned about 65 cm from the evaporation source is measured. As a non-limiting example, this deposition rate can be measured using a quartz crystal microbalance positioned about 65 cm from the evaporation source.

[0457] While some non-limiting examples have been described herein with reference to the first and second materials, it should be understood that the patterned coating may also include one, two, three or more additional materials, and the description of the molecular structure and / or properties of the first material, the second material, the first oligomer and / or the second oligomer may be applied to the additional materials that may be included in the patterned coating.

[0458] In some non-limiting examples, at least one of the first and second materials of the patterned coating 210 is an oligomer. As used herein, an oligomer generally refers to a material comprising at least two monomer units or monomers. As will be understood by those skilled in the art, an oligomer may differ from a polymer in at least one respect, including but not limited to: (1) the number of monomer units contained therein; (2) the molecular weight; and (3) other material properties and / or characteristics. As non-limiting examples, further descriptions of polymers and oligomers can be found in Naka K. (2014) “Monomers, Oligomers, Polymers, and Macromolecules (Overview)” and Kobayashi S., Müllen K. (eds.), “Encyclopedia of Polymeric Nanomaterials”, Springer (Berlin-Heidelberg).

[0459] Oligomers or polymers typically comprise monomeric units capable of chemically bonding together to form a molecule. These monomeric units may be substantially identical to each other, such that the molecule is formed primarily of repeating monomeric units, or the molecule may comprise two or more distinct monomeric units. Additionally, the molecule may include one or more terminal units, which may differ from the monomeric units of the molecule. Oligomers or polymers may be linear, branched, cyclic, cyclic-linear, and / or cross-linked. Oligomers or polymers may comprise two or more distinct monomeric units arranged in a repeating pattern and / or as alternating blocks of different monomeric units.

[0460] In some non-limiting examples, at least one of the first material and the second material is an oligomer. In some other non-limiting examples, the first material includes a first oligomer, and the second material includes a second oligomer. Each of the first and second oligomers includes at least two monomers.

[0461] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) is represented by the following formula:

[0462] (Mon) n Formula (I)

[0463] Where Mon represents a single entity, and n is an integer of 2 or greater.

[0464] In some unrestricted examples, n is an integer from 2 to 100, 2 to 50, 3 to 20, 3 to 15, 3 to 10, or 3 to 7.

[0465] In some non-limiting examples, the molecular structures of the first and second materials of the patterned coating 210 are each independently represented by formula (I). As a non-limiting example, the monomers and / or n of the first material may differ from those of the second material. In some non-limiting examples, n of the first material is the same as n of the second material. In some non-limiting examples, n of the first material is different from n of the second material. In some non-limiting examples, the first and second materials are oligomers.

[0466] In some non-limiting examples, the monomer includes at least one of fluorine and silicon.

[0467] In some non-limiting examples, the monomer includes a functional group. In some non-limiting examples, at least one functional group of the monomer has low surface tension. In some non-limiting examples, at least one functional group of the monomer includes at least one of fluorine and silicon. Non-limiting examples of such functional groups include fluorocarbon groups and siloxane groups. In some non-limiting examples, the monomer includes a sesquioxane group.

[0468] Surface tension attributable to a portion of the molecular structure (including, for example, monomers, monomer backbone units, linker groups, and / or functional groups) can be determined using various methods known in the art. Non-limiting examples of such methods include the use of parachor. Further description of parachor is provided, for example, in “Concept and Significance of Parachor,” *Nature*, 196:890-891. In some non-limiting examples, at least one functional group of the monomer has a surface tension of less than 25 dynes / cm, less than about 21 dynes / cm, less than about 20 dynes / cm, less than about 19 dynes / cm, less than about 18 dynes / cm, less than about 17 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 14 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, or less than about 10 dynes / cm.

[0469] In some non-limiting examples, the monomer includes at least one of CF2 and CF2H moieties. In some non-limiting examples, the monomer includes at least one of CF2 and CF3 moieties. In some non-limiting examples, the monomer includes a CH2CF3 moiety. In some non-limiting examples, the monomer includes at least one of carbon and oxygen. In some non-limiting examples, the monomer includes a fluorocarbon monomer. In some non-limiting examples, the monomer includes: a fluoroethylene moiety, a vinylidene fluoride moiety, a tetrafluoroethylene moiety, a trifluorochloroethylene moiety, a hexafluoropropylene moiety, and / or a fluorinated 1,3-dioxane moiety.

[0470] In some non-limiting examples, the monomer comprises a monomer backbone and functional groups. In some non-limiting examples, the functional groups are directly bonded to or bonded to the monomer backbone via linking groups. In some non-limiting examples, the monomer comprises linking groups, and the linking groups are bonded to both the monomer backbone and the functional groups. In some non-limiting examples, the monomer may comprise two or more functional groups, which may be the same as or different from each other. In such examples, each functional group may be directly bonded to or bonded to the monomer backbone via linking groups. In some non-limiting examples where two or more functional groups are present, two or more linking groups may also be present.

[0471] In some non-limiting examples, the molecular structure of at least one of the materials of the patterned coating 210 (which may be a first material and / or a second material) comprises two or more different monomers. In other words, such a molecular structure includes monomer species having different molecular compositions and / or molecular structures from one another. Non-limiting examples of such molecular structures include those represented by the following formula:

[0472]

[0473] Mon A Mon B And Mon C Each of these represents a monomer type, and k, m, and o each represent an integer greater than 2. In some non-limiting examples, k, m, and o each represent integers from 2 to 100, 2 to 50, 3 to 20, 3 to 15, 3 to 10, or 3 to 7. It should be understood that various non-limiting examples and descriptions regarding the monomer Mon are applicable to Mon. A Mon B And Mon C Each of them.

[0474] In some non-restrictive examples, the monomer is represented by the following formula:

[0475] M-(LR x ) y Equation (II)

[0476] Where M represents the monomer main chain unit, L represents the linking group, R represents the functional group, x is an integer from 1 to 4, and y is an integer from 1 to 3.

[0477] In some non-limiting examples, the linking group is represented by at least one of a single bond, O, N, NH, C, CH, CH2, and S.

[0478] Various non-limiting examples of functional groups described herein are applicable to R of formula (II). In some non-limiting examples, functional group R comprises an oligomer unit, and the oligomer unit further comprises at least two functional group monomer units. As a non-limiting example, the functional group monomer units may be CH2 and / or CF2. In some non-limiting examples, the functional group comprises a CH2CF3 moiety. For example, such functional group monomer units may be bonded together to form alkyl and / or fluoroalkyl oligomer units. In some non-limiting examples, the oligomer unit further comprises a functional group terminal unit. As a non-limiting example, the functional group terminal unit may be disposed at the end of the oligomer unit and bonded to the functional group monomer unit. In some non-limiting examples, the end where the functional group terminal unit is disposed may correspond to a portion of the functional group remote from the monomer backbone unit. Non-limiting examples of functional group terminal units include CF2H and CF3.

[0479] In some non-limiting examples, the monomeric main chain unit M has high surface tension. In some non-limiting examples, the monomeric main chain unit has a higher surface tension than at least one of the functional groups R to which it is bonded. In some further non-limiting examples, the monomeric main chain unit has a higher surface tension than any functional group R to which it is bonded.

[0480] In some non-limiting examples, the monomer backbone unit has a surface tension greater than about 25 dynes / cm, greater than about 30 dynes / cm, greater than about 40 dynes / cm, greater than about 50 dynes / cm, greater than about 75 dynes / cm, greater than about 100 dynes / cm, greater than about 150 dynes / cm, greater than about 200 dynes / cm, greater than about 250 dynes / cm, greater than about 500 dynes / cm, greater than about 1,000 dynes / cm, greater than about 1,500 dynes / cm, or greater than about 2,000 dynes / cm.

[0481] In some non-limiting examples, the monomer backbone unit comprises phosphorus (P) and nitrogen (N). A non-limiting example of such a monomer backbone unit is a phosphazene, wherein a double bond exists between P and N and can be represented as "NP" or "N=P". In some non-limiting examples, the monomer backbone unit comprises silicon (Si) and oxygen (O). A non-limiting example of such a monomer backbone unit is a silsesquioxane, which can be represented as SiO. 3 / 2 .

[0482] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) is represented by the following formula:

[0483] (NP-(LR x ) y ) n Equation (III)

[0484] In formula (III), NP represents the main chain unit of phosphononitrile monomer, L represents the linking group, R represents the functional group, x is an integer from 1 to 4, y is an integer from 1 to 3, and n is an integer of 2 or greater.

[0485] In some non-limiting examples, the molecular structure of the first material and / or the second material is represented by formula (III). In some other non-limiting examples, at least one of the first material and the second material is a cyclophosphamide. In some other non-limiting examples, the molecular structure of the cyclophosphamide is represented by formula (III).

[0486] In some non-limiting examples, L represents oxygen, x is 1, and R represents a fluoroalkyl group. In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) is represented by the following formula:

[0487] (NP(OR f )2) n Formula (IV)

[0488] Where R f This indicates a fluoroalkyl group, and n is an integer from 3 to 7.

[0489] In some non-limiting examples, the fluoroalkyl group includes at least one of the CF2 group, CF2H group, CH2CF3 group, and CF3 group. In some non-limiting examples, the fluoroalkyl group is represented by the following formula:

[0490]

[0491] Where p is an integer from 1 to 5; q is an integer from 6 to 20; and Z represents hydrogen or fluorine. In some non-restrictive examples, p is 1 and q is an integer from 6 to 20.

[0492] In some non-limiting examples, the fluoroalkyl group R in formula (IV) f It is represented by equation (V).

[0493] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) is represented by the following formula:

[0494] (SiO 3 / 2 -(LR)) n Formula (VI)

[0495] In formula (VI), L represents a linking group, R represents a functional group, and n is an integer from 6 to 12.

[0496] In some non-limiting embodiments, L represents the presence of a single bond, O, a substituted alkyl group, or an unsubstituted alkyl group. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, R includes a functional group with low surface tension. In some non-limiting examples, R includes an F-containing group and / or a Si-containing group. In some non-limiting examples, R includes a fluorocarbon group and / or a siloxane-containing group. In some non-limiting examples, R includes a CF2 group and / or a CF2H group. In some non-limiting examples, R includes a CF2 and / or a CF3 group. In some non-limiting examples, R includes a CH2CF3 group. In some non-limiting examples, the material represented by formula (VI) is a polyoctahedral silsesquioxane.

[0497] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) is represented by the following formula:

[0498] (SiO 3 / 2 -R f ) n Equation (VII)

[0499] Where n is an integer from 6 to 12, and Rf represents a fluoroalkyl group. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, Rf includes a functional group with low surface tension. In some non-limiting examples, Rf includes a CF2 moiety and / or a CF2H moiety. In some non-limiting examples, Rf includes a CF2 moiety and / or a CF3 moiety. In some non-limiting examples, Rf includes a CH2CF3 moiety. In some non-limiting examples, the material represented by formula (VII) is a polyoctahedral silsesquioxane.

[0500] In some non-limiting examples, the fluoroalkyl group R in formula (VII) f It is represented by equation (V).

[0501] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) is represented by the following formula:

[0502] (SiO 3 / 2 -(CH2) x (CF3) n Formula (VIII)

[0503] In formula (VIII), x is an integer from 1 to 5, and n is an integer from 6 to 12. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, the compound represented by formula (VIII) is a polyoctahedral silsesquioxane.

[0504] In some non-limiting examples, the functional group R and / or the fluoroalkyl group R f Such a group in any of the foregoing formulas may be chosen independently each time it appears. It should also be understood that any of the foregoing formulas may represent a substructure of the compound, and additional groups or portions not explicitly shown in the foregoing formulas may be present. It should also be understood that the various formulas provided in this application may represent straight-chain, branched, cyclic, cyclic-straight-chain, and / or cross-linked structures.

[0505] In some non-limiting examples, the patterned coating 210 includes at least one material represented by at least one of formulas (I), (I-1), (I-2), (II), (III), (IV), (VI), (VII), and (VIII), and at least one material exhibiting at least one of the following properties: (a) including an aromatic hydrocarbon moiety, (b) including sp 2 The carbon, (c) includes a phenyl moiety, (d) has a characteristic surface energy greater than about 20 dynes / cm, and (e) exhibits photoluminescence, as a non-limiting example, including exhibiting photoluminescence at wavelengths greater than about 365 nm when irradiated with excitation radiation having a wavelength of about 365 nm.

[0506] In some non-limiting examples, the patterned coating may also include a third material different from the first and second materials. In some non-limiting examples, the third material includes a monomer common to at least one of the first and second materials.

[0507] In some non-limiting examples, the difference in sublimation temperatures of the two or more materials of the patterned coating 210 (including, but not limited to, such a difference between the first material and the second material) is less than or equal to about 5°C, about 10°C, about 15°C, about 20°C, about 30°C, about 40°C, or about 50°C. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, the first material and / or the second material) includes at least one of F and Si, and the difference in sublimation temperatures of the materials of the patterned coating 210 is less than or equal to about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) includes at least one of a fluorocarbon compound portion and a siloxane portion, and the sublimation temperatures of the materials of the patterned coating 210 differ by less than or equal to about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C.

[0508] In some non-limiting examples, the difference in melting temperature between the two or more materials of the patterned coating 210 (including, but not limited to, such a difference between the first NIC material and the second NIC material) is less than or equal to about 5°C, about 10°C, about 15°C, about 20°C, about 30°C, about 40°C, or about 50°C. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, the first material and / or the second material) includes at least one of F and Si, and the difference in melting temperature between the materials of the patterned coating 210 is less than or equal to about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) includes at least one of a fluorocarbon compound portion and a siloxane portion, and the melting temperatures of the materials of the patterned coating 210 differ by less than or equal to about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C.

[0509] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) has a low characteristic surface energy. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) has a low characteristic surface energy, and at least one of the materials of the patterned coating 210 comprises at least one of F and Si. In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a first material and / or a second material) has a low characteristic surface energy and comprises at least one of F and Si, and at least one of the other materials of the patterned coating 210 has a high characteristic surface energy. In some non-limiting examples, the presence of F and Si may be attributed to the presence of the fluorocarbon compound portion and the siloxane portion, respectively. As a non-limiting example, at least one of these materials, corresponding to the second material, may have a low characteristic surface energy of about 10 dynes / cm-20 dynes / cm, 12 dynes / cm-20 dynes / cm, 15 dynes / cm-20 dynes / cm, or 17 dynes / cm-19 dynes / cm, and another material, corresponding to the first material, may have a high characteristic surface energy of about 20 dynes / cm-100 dynes / cm, 20 dynes / cm-50 dynes / cm, or 25 dynes / cm-45 dynes / cm. In some non-limiting examples, at least one of these materials comprises at least one of F and Si. As a non-limiting example, the second material may comprise at least one of F and Si.

[0510] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a second material) has a low characteristic surface energy of less than about 20 dynes / cm and includes at least one of F and / or Si, and at least one of the other materials of the patterned coating 210 (which may be, for example, a first material) has a characteristic surface energy of greater than about 20 dynes / cm.

[0511] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be, for example, a second material) has a low characteristic surface energy of less than about 20 dynes / cm and includes at least one of a fluorocarbon compound portion and / or a siloxane portion, and at least one of the other materials of the patterned coating 210 (which may be, for example, a first material) has a characteristic surface energy of greater than about 20 dynes / cm.

[0512] In some non-limiting examples, the surface energy of each of two or more materials of the patterned coating 210 (including, but not limited to, those of the first and second materials) is less than about 25 dynes / cm, less than about 21 dynes / cm, less than about 20 dynes / cm, less than about 19 dynes / cm, less than about 18 dynes / cm, less than about 17 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 14 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, or less than about 10 dynes / cm.

[0513] In some non-limiting examples, at least one of the materials of the patterned coating 210 (including, but not limited to, those of the first and second materials) has a refractive index of less than about 1.5, less than about 1.45, less than about 1.44, less than about 1.43, less than about 1.42, or less than about 1.41 at wavelengths of 500 nm and / or 460 nm. In some non-limiting examples, the patterned coating 210 includes at least one material exhibiting photoluminescence, and the patterned coating 210 has a refractive index of less than about 1.5, less than about 1.45, less than about 1.44, less than about 1.43, less than about 1.42, or less than about 1.41 at wavelengths of 500 nm and / or 460 nm.

[0514] In some non-limiting examples, at least one of the materials of the patterned coating 210 (including, but not limited to, those of the first and second materials) has a molecular weight greater than about 750, greater than about 1,000, greater than about 1,500, greater than about 2,000, greater than about 2,500, or greater than about 3,000.

[0515] In some non-limiting examples, at least one of the materials of the patterned coating 210 (including, but not limited to, those of the first and second materials) has a molecular weight of less than about 10,000, less than about 7,500, or less than about 5,000.

[0516] In some non-limiting examples, the NIC comprises two or more materials exhibiting similar thermal properties to each other, wherein at least one of these materials exhibits photoluminescence. In some non-limiting examples, the patterned coating comprises two or more materials having similar thermal properties to each other, wherein at least one of these materials exhibits photoluminescence, and wherein at least one or all of these materials comprises fluorine (F) and / or silicon (Si). In some non-limiting examples, the patterned coating comprises two or more materials having similar thermal properties to each other, wherein at least one of these materials exhibits photoluminescence at wavelengths greater than 365 nm when excited by radiation having an excitation wavelength of 365 nm, and wherein at least one or all of these materials comprises fluorine (F) and / or silicon (Si). In some non-limiting examples, similar thermal properties may include, but are not limited to, the melting temperature and / or sublimation temperature of the materials.

[0517] In some non-limiting examples, the patterned coating comprises two or more materials having at least one common element or at least one common substructure, wherein at least one of these materials exhibits photoluminescence. In some non-limiting examples, at least one or all of these materials comprises fluorine (F) and / or silicon (Si). In some non-limiting examples, the patterned coating comprises two or more materials having similar thermal properties to each other, wherein at least one of these materials exhibits photoluminescence at wavelengths greater than 365 nm when excited by radiation having an excitation wavelength of 365 nm, and wherein at least one or all of these materials comprises fluorine (F) and / or silicon (Si). In some non-limiting examples, the at least one common element includes, but is not limited to, fluorine (F) and / or silicon (Si). In some non-limiting examples, the at least one common substructure includes, but is not limited to, fluorocarbons, fluoroalkyl groups, and / or siloxy groups.

[0518] In one aspect, a method for manufacturing an optoelectronic device is provided. The method includes: (i) depositing a nucleation inhibition coating (NIC) on a first layer surface of the device in a laterally oriented first portion; and (ii) depositing a conductive coating on a second layer surface of the device in a laterally oriented second portion. The initial adhesion probability for forming the conductive coating on the surface of the patterned coating in the first portion is substantially less than the initial adhesion probability for forming the conductive coating on the surface in the second portion, such that the surface of the patterned coating in the first portion is substantially free of conductive coating. The NIC deposited on the first layer surface of the device comprises a first material and a second material.

[0519] In some non-limiting examples, depositing a patterned coating on a first layer surface of the device includes: providing a mixture comprising two or more materials, and depositing the mixture onto the first layer surface of the device to form a NIC thereon. In some non-limiting examples, the mixture comprises a first material and a second material. In such non-limiting examples, both the first material and the second material are deposited onto the first layer surface to form a patterned coating thereon.

[0520] In some non-limiting examples, a mixture comprising the two or more patterned coating materials is deposited onto the first layer surface of the device using a physical vapor deposition method. Non-limiting examples of this deposition method include thermal evaporation. In some non-limiting examples, the patterned coating is formed by evaporating the mixture from a common evaporation source and depositing the mixture onto the first layer surface of the device. In other words, as a non-limiting example, a mixture comprising a first material and a second material may be placed in a common crucible and / or evaporation source to heat the mixture under vacuum. Once the evaporation temperature of the material is reached or exceeded, the vapor flux generated by the mixture is directed to the first layer surface of the device to induce the deposition of the patterned coating thereon.

[0521] In some non-limiting examples, the patterned coating is deposited by co-evaporation of a first material and a second material. In some other non-limiting examples, the first material evaporates from a first crucible and / or a first evaporation source, and the second material simultaneously evaporates from a second crucible and / or a second evaporation source, such that the mixture is formed in the gas phase and co-deposited onto the surface of a first layer to provide a patterned coating thereon.

[0522] The following experiments were conducted to evaluate the properties of an exemplary patterned coating containing at least two materials.

[0523] A series of samples were fabricated by depositing an organic material layer of approximately 20 nm thickness, typically used as a hole transport layer material, in a vacuum, and then depositing nucleation-modified coatings with different compositions summarized in the table below on the organic material layer.

[0524] Sample labeling Composition of nucleation-modified coatings Sample 1 NIC material (15nm) Sample 2 NIC material: PL material 1 (0.5%, 15nm) Sample 3 NIC material: PL material 2 (0.5%, 15nm) Sample 4 PL material 1 (10nm) Sample 5 PL material 2 (10nm) Sample 6 No nucleation modification coating provided

[0525] In this example, the NIC material is selected such that, for example, when deposited as a thin film, the NIC material exhibits a lower initial adhesion probability relative to the material of the conductive coating (e.g., may include Ag and / or Yb).

[0526] In this example, PL material 1 and PL material 2 are selected such that, for example, when deposited as a thin film, PL material 1 and PL material 2 each exhibit photoluminescence that can be detected by standard optical measurement techniques (e.g., fluorescence microscopy).

[0527] In the table above, Sample 1 is a comparative sample in which a nucleation-modified coating is provided by depositing NIC material. Sample 2 is an exemplary sample in which a nucleation-modified coating is provided by co-depositing NIC material and PL material 1 together to form a coating containing 0.5 vol% of PL material 1. Sample 3 is an exemplary sample in which a nucleation-modified coating is provided by co-depositing NIC material and PL material 2 together to form a coating containing 0.5 vol% of PL material 2. Sample 4 is a comparative sample in which a nucleation-modified coating is provided by depositing PL material 1. Sample 5 is a comparative sample in which a nucleation-modified coating is provided by depositing PL material 2. Sample 6 is a comparative sample in which no nucleation-modified coating is provided on the organic material layer.

[0528] The photoluminescence (PL) response of each of samples 1, 2, 3, and 6 was measured and, as shown... Figure 36 The diagram is shown below. It was observed that the PL intensities of samples 1 and 6 were the same, thus indicating that the NIC material did not exhibit photoluminescence within the detection wavelength range. For simplicity, in... Figure 36 The PL intensity of sample 6 is not plotted. For each of samples 2 and 3, photoluminescence was detected at wavelengths from approximately 500 nm to approximately 600 nm.

[0529] Then, each of samples 1 to 6 was subjected to an open-mask deposition first, followed by Ag. Specifically, the surface of the nucleation-modified coating formed from the above materials was subjected to an open-mask deposition first, followed by Ag. More specifically, each sample was subjected to a Yb vapor flux until a reference thickness of about 1 nm was reached, and then to an Ag vapor flux until a reference thickness of about 12 nm was reached. Once the samples were fabricated, light transmittance measurements were performed to determine the relative amounts of Yb and / or Ag deposited on the surface of the nucleation-modified coating. As will be understood, samples with relatively little or no metal present are substantially transparent, while samples with metal deposited on them (particularly as a sealing film) typically exhibit substantially low light transmittance. Therefore, the relative performance of the various exemplary coatings as patterned coating 210 can be evaluated by measuring the light transmittance through the sample, which is directly related to the amount or thickness of the metal coating deposited thereon by Yb and / or Ag deposition. The decrease in optical transmittance at 460 nm wavelength after each sample was subjected to an Ag vapor flux was measured and summarized in the table below.

[0530]

[0531] Specifically, the transmittance reduction (%) for each sample in the table above was determined by measuring the light transmittance through the samples before and after exposure to Yb and Ag vapor fluxes and expressing the reduction in light transmittance as a percentage.

[0532] It can be seen that samples 1, 2, and 3 exhibit relatively low transmittance reductions of less than 2%, or, in the case of samples 1 and 3, less than 1%. Therefore, the nucleation-modified coatings provided for these samples are observed to act as NICs. Samples 4, 5, and 6 each exhibit transmittance reductions of 43%, 47%, and 45%, respectively. Therefore, the nucleation-modified coatings provided for these samples act as NPCs.

[0533] Furthermore, sample 1, in which the NIC essentially consists only of NIC material, did not exhibit photoluminescence. However, samples 2 and 3, in which the NIC contains PL material 1 and PL material 2 respectively, were found to exhibit photoluminescence, and also act as NICs by providing a surface with a low initial adhesion probability to the conductive coating.

[0534] As used in this example and other examples described herein, reference layer thickness refers to the thickness of a metal coating deposited on a reference surface exhibiting a high initial adhesion probability S0 (e.g., a surface with an initial adhesion probability S0 of approximately and / or close to 1.0). Specifically, for these examples, the reference surface is the surface of a quartz crystal positioned within the deposition chamber for monitoring the deposition rate and reference layer thickness. In other words, reference layer thickness does not represent the actual thickness of the metal coating deposited on the target surface (i.e., the surface of patterned coating 210). Rather, reference layer thickness refers to the thickness of the metal coating deposited on the reference surface when the target surface and the reference surface (i.e., the surface of the quartz crystal) are subjected to the same metal vapor flux for the same deposition time. As will be understood, in cases where the target surface and the reference surface are not subjected to the same vapor flux at the same time during deposition, appropriate tooling factors can be used to determine and monitor the reference thickness.

[0535] sedimentary layer

[0536] In some non-limiting examples, in the second portion 402 of the device 1000 facing laterally, a deposition layer 1030 including deposition material 1231 may be provided as a sealing coating 1040 on the exposed surface 11 of the underlying layer (including but not limited to the substrate 10).

[0537] In some non-limiting examples, the deposition layer 1030 may include deposition material 1231.

[0538] In some non-limiting examples, the deposited material 1231 may contain an element selected from at least one of the following: potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), Cu, aluminum (Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element may include at least one of Mg or Ag. In some non-limiting examples, the element may be Ag.

[0539] In some non-limiting examples, the deposition material 1231 may be a pure metal and / or include pure metals. In some non-limiting examples, the deposition material 1231 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, the deposition material 1231 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0540] In some non-limiting examples, the deposited material 1231 may include an alloy. In some non-limiting examples, the alloy may be at least one of an Ag-containing alloy, a Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition ranging from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0541] In some non-limiting examples, the deposition material 1231 may include other metals in place of Ag and / or in combination with Ag. In some non-limiting examples, the deposition material 1231 may include an alloy of Ag with at least one other metal. In some non-limiting examples, the deposition material 1231 may include an alloy of Ag with at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition between about 5 vol% and 95 vol% Ag, with the remainder being other metals. In some non-limiting examples, the deposition material 1231 may include Ag and Mg. In some non-limiting examples, the deposition material 1231 may include an Ag:Mg alloy having a composition between about 1:10 and 10:1 by volume. In some non-limiting examples, the deposition material 1231 may include Ag and Yb. In some non-limiting examples, the deposition material 1231 may include a Yb:Ag alloy having a composition between about 1:20 and 10:1 by volume. In some non-limiting examples, the deposition material 1231 may include Mg and Yb. In some non-limiting examples, the deposition material 1231 may include a Mg:Yb alloy. In some non-limiting examples, the deposition material 1231 may include Ag, Mg, and Yb. In some non-limiting examples, the deposition layer 1030 may include an Ag:Mg:Yb alloy.

[0542] In some non-limiting examples, the deposition layer 1030 may include at least one additional element. In some non-limiting examples, this additional element may be a non-metallic element. In some non-limiting examples, the non-metallic element may be at least one of O, S, N, or C. Those skilled in the art will understand that in some non-limiting examples, such additional elements may bind to the deposition layer 1030 as contaminants due to their presence in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements in the deposition layer 1030. In some non-limiting examples, the concentration of the non-metallic element in the deposition material 1231 may not exceed at least one of about 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%. In some non-limiting examples, the deposited layer 1030 may have a composition in which the combined amount of O and C may not exceed at least one of about 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%.

[0543] It has been found, somewhat surprisingly, that reducing the concentration of certain non-metallic elements in the deposition layer 1030, particularly when the deposition layer 1030 may be substantially composed of metals and / or metal alloys, can promote selective deposition of the deposition layer 1030. Without wishing to be bound by any particular theory, it can be assumed that certain non-metallic elements (such as, as a non-limiting example, O or C) when present in the vapor flux 1232 of the deposition layer 1030 and / or in the deposition chamber and / or environment, can deposit on the surface of the patterned coating 210 to act as nucleation sites for the metallic elements used in the deposition layer 1030. It can be assumed that reducing the concentration of such non-metallic elements that can act as nucleation sites can advantageously reduce the amount of deposited material 1231 deposited on the exposed surface 11 of the patterned coating 210.

[0544] In some non-limiting examples, the deposited material 1231 may be deposited on a metal-containing underlying layer. In some non-limiting examples, the deposited material 1231 and the underlying layer may include a common metal.

[0545] In some non-limiting examples, the deposition layer 1030 may include multiple layers of deposition material 1231. In some non-limiting examples, the deposition material 1231 of the first layer of the plurality of layers may be different from the deposition material 1231 of the second layer of the plurality of layers. In some non-limiting examples, the deposition layer 1030 may include a multilayer coating. In some non-limiting examples, such a multilayer coating may be at least one of Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, or Yb / Mg / Ag.

[0546] In some non-limiting examples, the deposited material 1231 may include a metal with a bond dissociation energy not greater than at least one of about 300 kJ / mol, 200 kJ / mol, 165 kJ / mol, 150 kJ / mol, 100 kJ / mol, 50 kJ / mol or 20 kJ / mol.

[0547] In some non-limiting examples, the deposited material 1231 may include a metal with an electronegativity of no more than at least one of about 1.4, 1.3 or 1.2.

[0548] In some non-limiting examples, the sheet resistance of the deposited layer 1030 may generally correspond to the sheet resistance of the deposited layer 1030, which is measured or determined isolated from other components, layers, and / or portions of the device 100. In some non-limiting examples, the deposited layer 1030 may be formed as a thin film. Therefore, in some non-limiting examples, the characteristic sheet resistance of the deposited layer 1030 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance may not be greater than at least one of about 10 Ω / □, 5 Ω / □, 1 Ω / □, 0.5 Ω / □, 0.2 Ω / □, or 0.1 Ω / □.

[0549] In some non-limiting examples, the deposited layer 1030 may be patterned, the pattern being defined by at least one region of a closed coating 1040 in which there is substantially no deposited layer 1030. In some non-limiting examples, the at least one region may separate the deposited layer 1030 into a plurality of discrete segments thereof. In some non-limiting examples, each discrete segment of the deposited layer 1030 may be a different second portion 402. In some non-limiting examples, the plurality of discrete segments of the deposited layer 1030 may be physically spaced apart from each other in their lateral orientation. In some non-limiting examples, at least two of such discrete segments of the deposited layer 1030 may be electrically coupled. In some non-limiting examples, at least two of such discrete segments of the deposited layer 1030 may each be electrically coupled to a common conductive layer or coating (including, but not limited to, the underlying surface) to allow current to flow between them. In some non-limiting examples, at least two of such discrete segments of the deposited layer 1030 may be electrically insulated from each other.

[0550] Selective deposition using patterned coatings

[0551] Figure 11 This is an exemplary schematic diagram illustrating a non-limiting example of an evaporation deposition process in chamber 1110, generally shown as 1100, for selectively depositing a patterned coating 210 onto a first portion 401 of the exposed surface 11 of the underlying layer.

[0552] In process 1100, a certain amount of patterning material 1111 is heated under vacuum to cause the patterning material 1111 to evaporate and / or sublimate. In some non-limiting examples, the patterning material 1111 may consist entirely and / or substantially comprise the material used to form the patterned coating 210. In some non-limiting examples, such material may include organic materials.

[0553] The evaporation flux 1112 of the patterned material 1111 can flow through the chamber 1110 (including in the direction indicated by arrow 111) toward the exposed layer surface 11. When the evaporation flux 1112 is incident on the exposed layer surface 11, a patterned coating 210 can be formed on the surface.

[0554] In some non-limiting examples, as shown in the figure of process 1100, by inserting a shadow mask 1115 (which may be an FMM in some non-limiting examples) between the evaporation flux 1112 and the exposed layer surface 11, the patterned coating 210 can be selectively deposited onto only a portion of the exposed layer surface 11 (the first portion 401 in the illustrated example). In some non-limiting examples, this shadow mask 1115 may be used to form relatively small features, wherein the feature size is approximately tens of micrometers or smaller.

[0555] The shadow mask 1115 may have at least one aperture 1116 extending therethrough, such that a portion of the evaporation flux 1112 passes through the aperture 1116 and can be incident on the exposed layer surface 11 to form a patterned coating 210. If the evaporation flux 1112 does not pass through the aperture 1116 but is incident on the surface 1117 of the shadow mask 1115, the evaporation flux is prevented from being deposited on the exposed layer surface 11 to form the patterned coating 210. In some non-limiting examples, the shadow mask 1115 may be configured such that the evaporation flux 1112 passing through the aperture 1116 can be incident on a first portion 401 but not on a second portion 402. The second portion 402 of the exposed layer surface 11 may therefore be substantially without the patterned coating 210. In some non-limiting examples (not shown), patterned material 1111 incident on the shadow mask 1115 may be deposited on its surface 1117.

[0556] Therefore, a patterned surface can be generated when the patterned coating 210 is deposited.

[0557] Figure 12 This is an exemplary schematic diagram illustrating a non-limiting example of the results of an evaporation process in chamber 1110, the evaporation process generally occurring at 1200... a As shown, a sealing coating 1040 for selectively depositing the deposition layer 1030 is deposited onto a second portion 402 of the exposed surface 11 of the underlying layer, the second portion being substantially free of (including but not limited to) by means of (…). Figure 11 The evaporation process 1100) selectively deposits a patterned coating 210 onto the first part 401.

[0558] In some non-limiting examples, the deposition layer 1030 may be composed of a deposition material 1231, which in some non-limiting examples includes at least one metal. Those skilled in the art will understand that, generally, the evaporation temperature of organic materials is lower than that of metals (such as the metal that can be used as deposition material 1231).

[0559] Therefore, in some non-limiting examples, there may be fewer constraints in selectively depositing a patterned coating 210 with a certain pattern using a shadow mask 1115, compared to directly patterning the deposited layer 1030 using such a shadow mask 1115.

[0560] Once the patterned coating 210 has been deposited on the first portion 401 of the exposed surface 11 of the underlying layer, the sealing coating 1040 of the deposited material 1231 can be deposited as a deposition layer 1030 on the second portion 402 of the exposed surface 11, which is essentially without the patterned coating 210.

[0561] In process 1200 a In this process, a certain amount of the deposited material 1231 can be heated under vacuum to cause the deposited material 1231 to evaporate and / or sublimate. In some non-limiting examples, the deposited material 1231 may consist entirely and / or substantially comprise the material used to form the deposited layer 1030.

[0562] The evaporation flux 1232 of the deposited material 1231 can be guided inside the chamber 1110 (including in the direction indicated by arrow 121) toward the exposed layer surface 11 of the first portion 401 and the second portion 402. When the evaporation flux 1232 is incident on the second portion 402 of the exposed layer surface 11, a sealing coating 1040 of the deposited material 1231 can be formed thereon as a deposited layer 1030.

[0563] In some non-limiting examples, the deposition of the deposition material 1231 can be performed using an open mask and / or maskless deposition process.

[0564] Those skilled in the art will understand that, in contrast to the feature size of the shadow mask 1115, the feature size of the aperture mask is typically comparable to the size of the device 100 being manufactured.

[0565] Those skilled in the art will understand that, in some non-limiting examples, the use of an aperture mask may be omitted. In some non-limiting examples, the aperture mask deposition process described herein may alternatively be performed without using an aperture mask, thereby exposing the entire target exposure layer surface 11.

[0566] In fact, such as Figure 12As shown, the evaporation flux 1232 can be incident on the exposed surface 11 of the patterned coating 210 in the first portion 401, and on the exposed surface 11 of the underlying layer in the second portion 402, which is substantially without the patterned coating 210.

[0567] Because the exposed surface 11 of the patterned coating 210 in the first portion 401 may exhibit a relatively low initial adhesion probability for the deposition of the deposited material 1231 relative to the exposed surface 11 of the lower layer in the second portion 402, the deposited layer 1030 may be deposited substantially selectively only on the exposed surface 11 of the lower layer in the second portion 402, which is substantially without the patterned coating 210. In contrast, the evaporation flux 1232 incident on the exposed surface 11 of the patterned coating 210 in the first portion 401 may tend not to deposit (as shown in 1233), and the exposed surface 11 of the patterned coating 210 in the first portion 401 may substantially lack the sealing coating 1040 of the deposited layer 1030.

[0568] In some non-limiting examples, the initial deposition rate of evaporation flux 1232 on the exposed surface 11 of the lower layer in the second part 402 may exceed at least one of about 200 times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times or 2,000 times the initial deposition rate of evaporation flux 1232 on the exposed surface 11 of the patterned coating 210 in the first part 401.

[0569] therefore, Figure 11 The selective deposition of patterned coating 210 using a shadow mask 1115 and a combination of open-mask and / or maskless deposition of deposited material 1231 can produce Figure 12 The device 100 shown is of type 1200. a .

[0570] After the patterned coating 210 is selectively deposited in the first part 401, in some non-limiting examples, an enclosed coating 1040 of the deposited material 1231 can be deposited on the device 1200 using an open-mask and / or maskless deposition process. a The upper layer serves as the deposition layer 1030, but this sealing coating may remain essentially only within the second portion 402, which is essentially unpatterned by the coating 210.

[0571] The patterned coating 210 can provide an exposed layer surface 11 within the first portion 401 with a relatively low initial adhesion probability to the deposition of the deposited material 1231, i.e., significantly smaller than that of the device 1200. a The initial adhesion probability of the exposed layer surface 11 of the lower material within the second part 402 for the deposition of the deposited material 1231.

[0572] Therefore, the first part 401 may be essentially without a sealing coating 1040 of the deposited material 1231.

[0573] While this disclosure envisions the use of an evaporation deposition process (involving a shadow mask 1115) for the patterned deposition of the patterned coating 210, those skilled in the art will understand that, in some non-limiting examples, this can be achieved using any suitable deposition process (including, but not limited to, microcontact printing processes).

[0574] While this disclosure envisions the patterned coating 210 as a NIC, those skilled in the art will understand that, in some non-limiting examples, the patterned coating 210 may be an NPC 1420. In such examples, portions of the NPC 1420 that have been deposited (such as, but not limited to, the first portion 401) may, in some non-limiting examples, have a sealing coating 1040 of deposited material 1231, while other portions (such as, but not limited to, the second portion 402) may substantially lack a sealing coating 1040 of deposited material 1231.

[0575] In some non-limiting examples, the average layer thickness of the patterned coating 210 and the average layer thickness of the subsequently deposited deposition layer 1030 may vary according to a variety of parameters, including but not limited to a given application and given performance characteristics. In some non-limiting examples, the average layer thickness of the patterned coating 210 may be comparable to, and / or substantially no greater than, the average layer thickness of the subsequently deposited deposition layer 1030. Using a relatively thin patterned coating 210 to achieve selective patterning of the deposition layer 1030 may be suitable for providing a flexible device 1000. In some non-limiting examples, the relatively thin patterned coating 210 may provide a relatively flat surface on which a barrier coating or other thin-film encapsulation (TFE) layer 2250 may be deposited. Figure 22B In some non-limiting examples, providing such a relatively flat surface for coating this barrier coating 1950 can increase its adhesion to such a surface.

[0576] Edge effect

[0577] Patterned coating transition area

[0578] Go to Figure 13A The diagram can show Figure 10 Device 1000 type 1300 a It can be shown in magnified form at the interface between the patterned coating 210 in the first part 401 and the deposited layer 1030 in the second part 402. Figure 13B Device 1300 can be shown in a plan view. a .

[0579] As in Figure 13B As can be better seen in some non-limiting examples, the patterned coating 210 in the first portion 401 may be surrounded on all sides by the deposited layer 1030 in the second portion 402, such that the first portion 401 may have a boundary defined by the patterned coating 210 in another range or edge 1315 in the lateral orientation along each lateral axis. In some non-limiting examples, the laterally oriented patterned coating edge 1315 may be defined by the first portion 401 at its periphery in this orientation.

[0580] In some non-limiting examples, the first portion 401 may include at least one patterned coating transition region 401 in the lateral orientation. t The thickness of the patterned coating 210 can transition from a maximum thickness to a reduced thickness. The range of the first portion 401 that does not exhibit this transition can be defined as the non-transition portion 401 of the patterned coating of the first portion 401. n In some non-limiting examples, the patterned coating 210 may be in the non-transition portion 401 of the patterned coating in the first portion 401. n A basically closed coating 1040 is formed in the middle.

[0581] In some non-limiting examples, the patterned coating transition region 401 t The patterned coating non-transition portion 401 can be laterally oriented towards the first portion 401. n Extends between the patterned coating edge 1315 and the edge of the patterned coating.

[0582] In some non-limiting examples, in a planar view, the patterned coating transition region 401 t The patterned coating non-transition portion 401 can surround the first portion 401 n And / or extend along its perimeter.

[0583] In some non-limiting examples, the patterned coating non-transition portion 401 is patterned along at least one lateral axis. n It can occupy the entire first portion 401, so that there is no patterned coating transition area 401 between it and the second portion 402. t .

[0584] like Figure 13A As shown, in some non-limiting examples, the patterned coating 210 is in the non-transition portion 401 of the patterned coating in the first portion 401. nThe film may have an average film thickness d2, which may be within at least one of about 1 nm-100 nm, 2 nm-50 nm, 3 nm-30 nm, 4 nm-20 nm, 5 nm-15 nm, 5 nm-10 nm, or 1 nm-10 nm. In some non-limiting examples, the patterned coating of the first portion 401 is a non-transition portion 401. n The average film thickness d2 of the patterned coating 210 can be substantially the same or constant therebetween. In some non-limiting examples, in the non-transition portion 401 of the patterned coating... n The average layer thickness d2 of the patterned coating 210 can be maintained within at least one of about 95% or 90% of the average film thickness d2 of the patterned coating 210.

[0585] In some non-limiting examples, the average film thickness d2 can be between about 1 nm and 100 nm. In some non-limiting examples, the average film thickness d2 can be no greater than at least one of about 80 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, 15 nm, or 10 nm. In some non-limiting examples, the average film thickness d2 of the patterned coating 210 can exceed at least one of about 3 nm, 5 nm, or 8 nm.

[0586] In some non-limiting examples, the patterned coating of the first part 401 is a non-transitional portion 401. n The average film thickness d2 of the patterned coating 210 may not exceed approximately 10 nm. Without wishing to be bound by any particular theory, it has been found, somewhat surprisingly, that, at least in some non-limiting examples, the non-transition portion 401 of the patterned coating relative to the first portion 401... n The patterned coating 210 with an average film thickness d2 exceeding 10 nm, and the patterned coating 210 with an average film thickness d2 exceeding zero and not exceeding about 10 nm, can provide some advantages for (as a non-limiting example) achieving enhanced patterned contrast of the deposited layer 1030.

[0587] In some non-limiting examples, the patterned coating 210 may have a patterned coating transition region 401 t The patterned coating thickness decreases from a maximum to a minimum within the first part 401. In some non-limiting examples, this maximum value may be in the patterned coating transition region 401 of the first part 401. t and patterned coating non-transition portion 401 n At and / or near the boundary between them. In some non-limiting examples, the minimum value may be at and / or near the edge of the patterned coating 1315. In some non-limiting examples, the maximum value may be at the non-transition portion 401 of the patterned coating of the first portion 401. nThe average film thickness d2 in the first part 401. In some non-limiting examples, this maximum value may not be greater than the patterned coating non-transition portion 401 of the first part 401. n The minimum value is at least one of about 95% or 90% of the average film thickness d2. In some non-limiting examples, this minimum value may be in the range of about 0 nm to 0.1 nm.

[0588] In some non-limiting examples, the patterned coating transition region 401 t The profile of the patterned coating thickness can be sloping and / or follow a gradient. In some non-limiting examples, this profile can be conical. In some non-limiting examples, the cone can follow a linear, non-linear, parabolic, and / or exponentially decaying profile.

[0589] In some non-limiting examples, the patterned coating 210 may be in the patterned coating transition region 401 t The middle completely covers the surface below. In some non-limiting examples, in the patterned coating transition area 401 t In this process, at least a portion of the lower layer may not be covered by the patterned coating 210. In some non-limiting examples, the patterned coating 210 may be present in the patterned coating transition region 401. t At least a portion of the neutralized / or patterned coating non-transition portion 401 n At least a portion of it includes a substantially closed coating 1040.

[0590] In some non-limiting examples, the patterned coating 210 may be in the patterned coating transition region 401 t At least a portion of the neutralized / or patterned coating non-transition portion 401 n At least a portion of it includes discontinuous layers 130.

[0591] In some non-limiting examples, at least a portion of the patterned coating 210 in the first portion 401 may be substantially free of the sealing coating 1040 of the deposited layer 1030. In some non-limiting examples, at least a portion of the exposed surface 11 of the first portion 401 may be substantially free of the sealing coating 1040 of the deposited layer 1030 or the deposited material 1231.

[0592] In some non-limiting examples, the patterned coating non-transition portion 401 is patterned along at least one lateral axis (including but not limited to the X-axis). n It can have a width w1 and a patterned coating transition area 401 t It may have a width w2. In some non-limiting examples, the patterned coating non-transition portion 401 nIt may have a cross-sectional area, which in some non-limiting examples can be approximated by multiplying the average film thickness d2 by the width w1. In some non-limiting examples, the patterned coating transition region 401 t It may have a cross-sectional area, which in some non-limiting examples can be achieved by extending the patterned coating transition region 401. t The average film thickness is approximated by multiplying the width w1.

[0593] In some non-restrictive examples, w1 may exceed w2. In some non-restrictive examples, the quotient of w1 / w2 may be at least one of about 5, 10, 20, 50, 100, 500, 1,000, 1,500, 5,000, 10,000, 50,000, or 100,000.

[0594] In some non-limiting examples, at least one of w1 and w2 may exceed the average film thickness d1 of the underlying layer.

[0595] In some non-restrictive examples, at least one of w1 and w2 may exceed d2. In some non-restrictive examples, both w1 and w2 may exceed d2. In some non-restrictive examples, both w1 and w2 may exceed d1, and d1 may exceed d2.

[0596] Sedimentary transition zone

[0597] As in Figure 13B As can be better seen in some non-limiting examples, the patterned coating 210 in the first portion 401 may be surrounded by the deposited layer 1030 in the second portion 402, such that the second portion 402 has a boundary defined by the deposited layer 1030 in another range or edge 1335 in the lateral orientation along each lateral axis. In some non-limiting examples, the laterally oriented edge 1335 of the deposited layer may be defined by the second portion 402 around this orientation.

[0598] In some non-limiting examples, the second portion 402 may include at least one deposition layer transition region 402 in the lateral orientation. t The thickness of the deposition layer 1030 can transition from a maximum thickness to a reduced thickness. The range of the second part 402 that does not exhibit this transition can be identified as the non-transitional portion 402 of the deposition layer of the second part 402. n In some non-limiting examples, the deposition layer 1030 may be located in the non-transition portion 402 of the second portion 402. n A basically closed coating 1040 is formed in the middle.

[0599] In some non-limiting examples, in the plan view, the sedimentary layer transition region 402 tIt can be laterally oriented towards the non-transition portion 402 of the deposition layer in the second part 402 n It extends between the edge of the sedimentary layer and 1335.

[0600] In some non-limiting examples, in the plan view, the sedimentary layer transition region 402 t The non-transition portion 402 of the sedimentary layer surrounding the second part 402 n And / or extend along its perimeter.

[0601] In some non-limiting examples, along at least one lateral axis, the deposition layer non-transition portion 402 of the second portion 402 n It can occupy the entire second part 402, so that there is no sedimentary transition region 402 between it and the first part 401. t .

[0602] like Figure 13A As shown, in some non-limiting examples, the deposition layer 1030 is in the non-transition portion 402 of the second portion 402. n The film may have an average film thickness d3, which may be in the range of at least one of about 1 nm-500 nm, 5 nm-200 nm, 5 nm-40 nm, 10 nm-30 nm, or 10 nm-100 nm. In some non-limiting examples, d3 may exceed at least one of about 10 nm, 50 nm, or 100 nm. In some non-limiting examples, the deposition layer of the second portion 402 is a non-transition portion 402. t The average film thickness d3 of the deposited layer 1030 can be substantially the same or constant therebetween.

[0603] In some non-limiting examples, d3 may exceed the average film thickness d1 of the underlying layer.

[0604] In some non-limiting examples, the quotient d3 / d1 may be at least one of about 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting examples, the quotient d3 / d1 may be in the range of at least one of about 0.1-10 or 0.2-40.

[0605] In some non-limiting examples, d3 may exceed the average film thickness d2 of the patterned coating 210.

[0606] In some non-limiting examples, the quotient d3 / d2 may be at least one of about 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting examples, the quotient d3 / d2 may be in the range of at least one of about 0.2-10 or 0.5-40.

[0607] In some non-restrictive examples, d3 may exceed d2 and d2 may exceed d1. In some other non-restrictive examples, d3 may exceed d1 and d1 may exceed d2.

[0608] In some non-limiting examples, the quotient d2 / d1 can be between at least one of about 0.2-3 or 0.1-5.

[0609] In some non-limiting examples, along at least one lateral axis (including but not limited to the X-axis), the non-transition portion 402 of the deposition layer of the second portion 402 n It may have a width w3. In some non-limiting examples, the deposition layer non-transition portion 402 of the second portion 402 n It may have a cross-sectional area a3, which in some non-limiting examples can be approximated by multiplying the average film thickness d3 by the width w3.

[0610] In some non-limiting examples, w3 may extend beyond the non-transition portion 401 of the patterned coating. n The width is w1. In some non-restrictive examples, w1 may exceed w3.

[0611] In some non-limiting examples, the quotient w1 / w3 may be in the range of at least one of about 0.1-10, 0.2-5, 0.3-3, or 0.4-2. In some non-limiting examples, the quotient w3 / w1 may be at least one of about 1, 2, 3, or 4.

[0612] In some non-limiting examples, w3 may exceed the average film thickness d3 of the deposited layer 1030.

[0613] In some non-limiting examples, the quotient w3 / d3 may be at least one of about 10, 50, 100, or 500. In some non-limiting examples, the quotient w3 / d3 may not be greater than about 100,000.

[0614] In some non-limiting examples, the sedimentary layer 1030 may have a sedimentary layer transition region 402. t The thickness decreases from its maximum value to its minimum value. In some non-limiting examples, this maximum value may be in the deposition layer transition region 402 of the second part 402. t and the non-transitional portion of the sedimentary layer 402 n At and / or near the boundary between them. In some non-limiting examples, the minimum value may be at and / or near the edge of the sedimentary layer 1335. In some non-limiting examples, the maximum value may be at the non-transition portion 402 of the sedimentary layer in the second portion 402. nThe average film thickness d3 in the middle. In some non-limiting examples, this minimum value can be in the range of about 0 nm to 0.1 nm. In some non-limiting examples, this minimum value can be the non-transition portion 402 of the deposition layer in the second portion 402. n The average film thickness d3 in the film.

[0615] In some non-limiting examples, the sedimentary layer transition region 402 t The thickness profile in the model can be sloping and / or follow a gradient. In some non-limiting examples, this profile can be conical. In some non-limiting examples, the cone can follow a linear, non-linear, parabolic, and / or exponentially decaying profile.

[0616] In some non-restrictive examples, such as by Figure 13E Exemplary type 1300 of device 1000 e As shown in the non-limiting example, the sedimentary layer 1030 may be in the sedimentary layer transition region 402 t The deposition layer 1030 completely covers the surface below. In some non-limiting examples, the deposition layer 1030 may be in the deposition layer transition region 402. t At least a portion of it includes a substantially closed coating 1040. In some non-limiting examples, in the deposition layer transition region 402 t In the middle, at least a portion of the underlying surface may not be covered by the deposition layer 1030.

[0617] In some non-limiting examples, the deposition layer 1030 may be in the deposition layer transition region 402. t At least a portion of it includes discontinuous layers 130.

[0618] Those skilled in the art will understand that, although not explicitly stated, the patterned material 1111 may also be present to some extent at the interface between the deposited layer 1030 and the underlying layer. This material may be deposited due to a masking effect, where the deposited pattern differs from the mask pattern, and in some non-limiting examples, may result in some evaporated patterned material 1111 depositing on the masked portion of the target exposed layer surface 11. As a non-limiting example, this material may be formed as a particulate structure 121 and / or as a thin film with a thickness substantially no greater than the average thickness of the patterned coating 210.

[0619] overlapping

[0620] In some non-limiting examples, the edge 1335 of the deposited layer may be laterally oriented toward the patterned coating transition region 401 of the first portion 401. t The two parts are spaced apart so that there is no overlap in the lateral orientation between the first part 401 and the second part 402.

[0621] In some non-limiting examples, at least a portion of the first portion 401 and at least a portion of the second portion 402 may overlap laterally. This overlap can be confirmed by the overlapping portion 1303, such as by... Figure 13A A non-limiting example is shown in which at least a portion of the second portion 402 overlaps with at least a portion of the first portion 401.

[0622] In some non-restrictive examples, such as Figure 13F As shown in the non-limiting example, the sedimentary layer transition region 402 t At least a portion of it may be disposed in the patterned coating transition region 401 t At least a portion of it. In some non-limiting examples, the patterned coating transition region 401 t At least a portion may be substantially free of deposited layer 1030 and / or deposited material 1231. In some non-limiting examples, deposited material 1231 may be present in the patterned coating transition region 401. t A discontinuous layer 130 is formed on at least a portion of the exposed layer surface 11.

[0623] In some non-restrictive examples, such as Figure 13G As shown in the non-limiting example, the sedimentary layer transition region 402 t At least a portion may be disposed in the patterned coating non-transition portion 401 of the first portion 401. n At least a part of it.

[0624] Although not shown, those skilled in the art will understand that in some non-limiting examples, the overlapping portion 1303 may reflect a scenario where at least a portion of the first portion 401 overlaps with at least a portion of the second portion 402.

[0625] Therefore, in some non-limiting examples, the patterned coating transition region 401 t At least a portion of it may be disposed in the sedimentary layer transition region 402 t At least a portion of it. In some non-limiting examples, the sedimentary layer transition region 402 t At least a portion may be substantially without patterned coating 210 and / or patterned material 1111. In some non-limiting examples, patterned material 1111 may be present in the deposition layer transition region 402. t A discontinuous layer 130 is formed on at least a portion of the exposed layer surface.

[0626] In some non-limiting examples, the patterned coating transition region 401 t At least a portion may be disposed in the non-transition portion 402 of the deposition layer in the second portion 402. n At least a part of it.

[0627] In some non-limiting examples, the patterned coating edge 1315 may be laterally oriented toward the non-transition portion 402 of the deposited layer of the second portion 402. n Separately spaced.

[0628] In some non-limiting examples, the deposition layer 1030 may be formed as a non-transitional portion 402 of the deposition layer across the second portion 402. n Transition region 402 between sedimentary layers t Both are single, monolithic coatings.

[0629] Edge effects of patterned coatings and deposited layers

[0630] Figures 14A-14I Various potential behaviors of the patterned coating 210 at the deposition interface with the deposited layer 1030 are described.

[0631] Go to Figure 14A The figure illustrates a first example of an exemplary type 1400 of device 1000 at a portion of the patterned coating deposition boundary. Device 1400 may include a substrate 10 having an exposed layer surface 11. A patterned coating 210 may be deposited on a first portion 401 of the exposed layer surface 11. A deposited layer 1030 may be deposited on a second portion 402 of the exposed layer surface 11. As shown, as a non-limiting example, the first portion 401 and the second portion 402 may be different and non-overlapping portions of the exposed layer surface 11.

[0632] The deposited layer 1030 may include a first portion 1301 and a second portion 10302. As shown, as a non-limiting example, the first portion 10301 of the deposited layer 1030 may substantially cover the second portion 402, and the second portion 10302 of the deposited layer 1030 may partially protrude over and / or overlap with the first portion of the patterned coating 210.

[0633] In some non-limiting examples, since the patterned coating 210 can be formed such that its exposed surface 11 exhibits a relatively low initial adhesion probability to the deposition of the deposited material 1231, a gap 1429 can be formed between the protruding and / or overlapping second portion 10302 of the deposited layer 1030 and the exposed surface 11 of the patterned coating 210. Therefore, in the cross-sectional orientation, the second portion 10302 may not be in physical contact with the patterned coating 210, but may be spaced apart from it by the gap 1429. In some non-limiting examples, the first portion 10301 of the deposited layer 1030 may be in physical contact with the patterned coating 210 at the interface and / or boundary between the first portion 401 and the second portion 402.

[0634] In some non-limiting examples, the protruding and / or overlapping second portion 10302 of the deposited layer 1030 may extend laterally over the patterned coating 210 with respect to the average layer thickness d of the first portion 10301 of the deposited layer 1030. a To a considerable degree. As a non-limiting example, as shown in the figure, the width w of the second part 10302 b The average layer thickness d of the first part 10301 can be compared with a Quite. In some non-restrictive examples, the width w of the second part 10302 b The average layer thickness d of the first part 10301 a The ratio can be in the range of at least one of approximately 1:1-1:3, 1:1-1:1.5, or 1:1-1:2. Although the average layer thickness d a In some non-limiting examples, the second portion 10302 may be relatively uniform across the first portion 10301, but in some non-limiting examples, the second portion 10302 may be prominent and / or overlap with the patterned coating 210 to a certain extent (i.e., w). b It can vary to some extent across different parts of the exposed layer surface 11.

[0635] Now go to Figure 14B The deposited layer 1030 can be shown as including a third portion 10303 disposed between the second portion 10302 and the patterned coating 210. As shown, the second portion 10302 of the deposited layer 1030 may extend laterally over and be longitudinally spaced from the third portion 10303 of the deposited layer 1030, and the third portion 10303 may be in physical contact with the exposed surface 11 of the patterned coating 210. The average layer thickness d of the third portion 10303 of the deposited layer 1030 is... c It may not exceed the average layer thickness d of its first part 10301 a And in some non-limiting examples, it is substantially smaller than the average layer thickness. In some non-limiting examples, the width w of the third part 10303 c It can exceed the width w of the second part 10302. b In some non-limiting examples, the third portion 10303 may extend laterally to overlap the patterned coating 210 to a greater extent than the second portion 10302. In some non-limiting examples, the width w of the third portion 10303... c The average layer thickness d of the first part 10301 a The ratio can be in the range of at least one of approximately 1:2-3:1 or 1:1.2-2.5:1. Although the average layer thickness d aIn some non-limiting examples, the third portion 10303 may be relatively uniform across the first portion 10301, but in some non-limiting examples, the third portion 10303 may be prominent and / or overlap with the patterned coating 210 to a certain extent (i.e., w). c It can vary to some extent across different parts of the exposed layer surface 11.

[0636] In some non-limiting examples, the average layer thickness d of Part 3 10303 c The average layer thickness d of the first part 10301 may not exceed a Approximately 5%. As a non-restrictive example, d c It may not be greater than d a At least one of about 4%, 3%, 2%, 1%, or 0.5%. Instead of the third portion 10303 being formed as a thin film, as shown, the deposited material 1231 of the deposited layer 1030 may be formed as a granular structure 121 on a portion of the patterned coating 210. As a non-limiting example, such granular structures 121 may include features that are physically separated from each other, such that they do not form a continuous layer.

[0637] Now go to Figure 14C An NPC 1420 may be disposed between the substrate 10 and the deposited layer 1030. The NPC 1420 may be disposed between a first portion 10301 of the deposited layer 1030 and a second portion 402 of the substrate 10. The NPC 1420 is shown disposed on the second portion 402 and not on the first portion 401, on which a patterned coating 210 has been deposited. The NPC 1420 may be formed such that at the interface and / or boundary between the NPC 1420 and the deposited layer 1030, the surface of the NPC 1420 may exhibit a relatively high initial adhesion probability for the deposition of the deposited material 1231. Therefore, the presence of the NPC 1420 may promote the formation and / or growth of the deposited layer 1030 during deposition.

[0638] Now go to Figure 14D The NPC 1420 may be disposed on both the first portion 401 and the second portion 402 of the substrate 10, and the patterned coating 210 may cover a portion of the NPC 1420 disposed on the first portion 401. Another portion of the NPC 1420 may be substantially without the patterned coating 210, and the deposited layer 1030 may cover this portion of the NPC 1420.

[0639] Now go to Figure 14EThe deposited layer 1030 may be shown as partially overlapping a portion of the patterned coating 210 in a third portion 1403 of the substrate 10. In some non-limiting examples, in addition to the first portion 10301 and the second portion 10302, the deposited layer 1030 may also include a fourth portion 10304. As shown, the fourth portion 10304 of the deposited layer 1030 may be disposed between the first portion 10301 and the second portion 10302 of the deposited layer 1030, and the fourth portion 10304 may be in physical contact with the exposed surface 11 of the patterned coating 210. In some non-limiting examples, the overlap in the third portion 1403 may be formed due to lateral growth of the deposited layer 1030 during an aperture mask and / or maskless deposition process. In some non-limiting examples, although the exposed surface 11 of the patterned coating 210 may exhibit a relatively low initial adhesion probability for the deposition of the deposited material 1231, and therefore the probability of material nucleation on the exposed surface 11 may be low, the deposited layer 1030 may also grow laterally and may cover a subset of the patterned coating 210 as the thickness of the deposited layer 1030 grows, as shown in the figure.

[0640] Now go to Figure 14F The first portion 401 of the substrate 10 may be coated with a patterned coating 210, and the adjacent second portion 402 may be coated with a deposited layer 1030. In some non-limiting examples, it has been observed that performing masked and / or maskless deposition of the deposited layer 1030 can result in the deposited layer 1030 exhibiting a tapered cross-sectional profile at and / or near the interface between the deposited layer 1030 and the patterned coating 210.

[0641] In some non-limiting examples, the average layer thickness of the deposited layer 1030 at and / or near the interface may be less than the average layer thickness d3 of the deposited layer 1030. While this tapered profile may be shown as curved and / or arched, in some non-limiting examples, the profile may be substantially linear and / or non-linear. As a non-limiting example, the average layer thickness d3 of the deposited layer 1030 may decrease in a substantially linear, exponential, and / or quadratic manner in the region near the interface.

[0642] It has been observed that the contact angle θ of the deposited layer 1030 at and / or near the interface between the deposited layer 1030 and the patterned coating 210 c This can vary, depending specifically on the properties of the patterned coating 210, such as the relative initial adhesion probability. It can be further assumed that, in some non-limiting examples, the contact angle θ of the core... c This indicates the thin film contact angle of the deposited layer 1030. See also Figure 14F As a non-limiting example, the contact angle θ cThe contact angle θ can be determined by measuring the slope of the tangent of the deposited layer 1030 at and / or near the interface between the deposited layer 1030 and the patterned coating 210. In some non-limiting examples, the contact angle θ is determined when the cross-sectional tapered profile of the deposited layer 1030 can be substantially linear. c The contact angle θ can be determined by measuring the slope of the deposited layer 1030 at and / or near the interface. As will be understood by those skilled in the art, the contact angle θ... c Typically, the angle relative to the underlying layer can be measured. In this disclosure, for the purpose of illustrative simplicity, the patterned coating 210 and the deposited layer 1030 may be shown as deposited on a flat surface. However, those skilled in the art will understand that the patterned coating 210 and the deposited layer 1030 may be deposited on a non-flat surface.

[0643] In some non-limiting examples, the contact angle θ of the deposition layer 1030 c It can exceed approximately 90°. See now. Figure 14G As a non-limiting example, the deposited layer 1030 may be shown as including a portion extending through the interface between the patterned coating 210 and the deposited layer 1030, and may be spaced apart from the patterned coating 210 by gap 1429. In this non-limiting scenario, the contact angle θ c In some non-restrictive examples, the angle may exceed 90°.

[0644] In some non-limiting examples, it may be advantageous to form a contact angle θ that exhibits a relatively high contact angle. c The deposition layer is 1030. As a non-limiting example, the contact angle θ... c It can exceed at least one of about 10°, 15°, 20°, 25°, 30°, 35°, 40°, 50°, 70°, 75°, or 80°. As a non-limiting example, it has a relatively high contact angle θ. c The deposited layer 1030 allows for the production of finely patterned features while maintaining a relatively high aspect ratio. As a non-limiting example, it is possible to achieve a contact angle θ greater than approximately 90°. c The deposition layer is 1030. As a non-limiting example, the contact angle θ... c It may exceed at least one of approximately 90°, 95°, 100°, 105°, 110°, 120°, 130°, 135°, 140°, 145°, 150° or 170°.

[0645] Now go to Figures 14H-14IThe deposited layer 1030 may partially overlap with a portion of the patterned coating 210 in a third portion 1403 of the substrate 10, which may be disposed between the first portion 401 and the second portion 402 of the substrate. As shown, the subset of the deposited layer 1030 that partially overlaps with a subset of the patterned coating 210 may be in physical contact with its exposed layer surface 11. In some non-limiting examples, the overlap in the third portion 1403 may be formed due to the lateral growth of the deposited layer 1030 during an open-mask and / or maskless deposition process. In some non-limiting examples, although the exposed layer surface 11 of the patterned coating 210 may exhibit a relatively low initial adhesion probability for the deposition of the deposited material 1231, and therefore a low probability of material nucleation on the exposed layer surface 11, the deposited layer 1030 may also grow laterally and may cover a subset of the patterned coating 210 as the thickness of the deposited layer 1030 grows.

[0646] At once Figures 14H-14I Regarding the contact angle θ of the sediment layer 1030 c Measurements can be taken at the edge near the interface between the deposited layer and the patterned coating 210, as shown in the figure. Figure 14I In the middle, the contact angle θ c It can exceed about 90°, which in some non-limiting examples can cause a subset of the deposited layer 1030 to be spaced apart from the patterned coating 210 through the gap 1429.

[0647] Particles

[0648] In some non-restrictive examples, such as... Figure 13C As shown, at least one particle may be present on the exposed surface 11 of the lower layer, including but not limited to nanoparticles (NPs), islands, plates, disconnected clusters, and / or networks (collectively referred to as particle structure 121). In some non-limiting examples, the lower layer may be a patterned coating 210 in the first part 401. In some non-limiting examples, at least one particle structure 121 may be present on the exposed surface 11 of the patterned coating 210. In some non-limiting examples, multiple such particle structures 121 may be present.

[0649] In some non-limiting examples, at least one particulate structure 121 may include particulate material. In some non-limiting examples, the particulate material may be the same as the deposited material 1231 in the deposit layer 1030.

[0650] In some non-limiting examples, the particulate material in the discontinuous layer of the first part 401, the deposited material 1231 in the deposited layer 1030, and / or the material that may constitute the underlying layer 130 may include a common metal.

[0651] In some non-limiting examples, the particulate material may include an element selected from at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, or Y. In some non-limiting examples, the particulate structure material may include an element selected from at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element may include at least one of Mg or Ag. In some non-restrictive examples, the element can be Ag.

[0652] In some non-limiting examples, the particulate material may include a pure metal. In some non-limiting examples, at least one particulate structure 121 may be a pure metal. In some non-limiting examples, at least one particulate structure 121 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of at least one of at least 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, at least one particulate structure 121 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least one of at least 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0653] In some non-limiting examples, at least one particulate structure 121 may comprise an alloy. In some non-limiting examples, the alloy may be at least one of an Ag-containing alloy, a Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition ranging from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0654] In some non-limiting examples, the particulate material may include other metals in place of or in combination with Ag. In some non-limiting examples, the particulate material may include an alloy of Ag with at least one other metal. In some non-limiting examples, the particulate material may include an alloy of Ag with at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition between about 5 vol% and 95 vol% Ag, with the remainder being other metals. In some non-limiting examples, the particulate material may include Ag and Mg. In some non-limiting examples, the particulate material may include an Ag:Mg alloy having a composition between about 1:10 and 10:1 by volume. In some non-limiting examples, the particulate material may include Ag and Yb. In some non-limiting examples, the particulate material may include a Yb:Ag alloy having a composition between about 1:20 and 10:1 by volume. In some non-limiting examples, the particulate material may include Mg and Yb. In some non-limiting examples, the particulate material may include a Mg:Yb alloy. In some non-limiting examples, the particulate material may include an Ag:Mg:Yb alloy.

[0655] In some non-limiting examples, at least one particulate structure 121 may contain at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be at least one of O, S, N, or C. Those skilled in the art will understand that in some non-limiting examples, such additional elements may bind as contaminants to at least one particulate structure 121 due to their presence in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such additional elements may form compounds with other elements of at least one particulate structure 121. In some non-limiting examples, the concentration of the non-metallic element in the deposition material 1231 may not exceed at least one of about 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%. In some non-limiting examples, at least one particulate structure 121 may have a composition in which the combined amount of O and C is not greater than at least one of about 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or 0.0000001%.

[0656] In some non-limiting examples, the presence of at least one particulate structure 121 (including but not limited to NP) in the discontinuous layer 130 or on the exposed surface 11 of the patterned coating 210 may affect some optical properties of the device 1300.

[0657] In some non-limiting examples, the plurality of particulate structures 121 may form discontinuous layers 130.

[0658] Without wishing to be limited by any particular theory, it may be assumed that while the formation of the closed coating 1040 of the deposited material 1231 can be substantially suppressed by the patterned coating 210 and / or substantially suppressed on the patterned coating, in some non-limiting examples, when the patterned coating 210 is exposed to the deposition of the deposited material 1231 thereon, some vapor monomers of the deposited material 1231 may eventually form at least one particulate structure 121 of the deposited material 1231 thereon.

[0659] In some non-limiting examples, at least some of the granular structures 121 may be disconnected from each other. In other words, in some non-limiting examples, the discontinuous layer 130 may include features (including the granular structures 121) that are physically separable from each other, such that the granular structures 121 do not form a closed coating 1040. Thus, in some non-limiting examples, such a discontinuous layer 130 may therefore include a thin, dispersed layer of deposited material 1231 formed as the granular structures 121, inserted at the interface between the patterned coating 210 and at least one capping layer 710 in the device 100 and / or substantially across the lateral extent of that interface.

[0660] In some non-limiting examples, at least one of the particle structures 121 of the deposited material 1231 may be in physical contact with the exposed surface 11 of the patterned coating 210. In some non-limiting examples, substantially all of the particle structures 121 of the deposited material 1231 may be in physical contact with the exposed surface 11 of the patterned coating 210.

[0661] Without being bound by any particular theory, it has been found, somewhat surprisingly, that such a thin, dispersed discontinuous layer 130 (including, but not limited to, at least one particulate structure 121, including, but not limited to, metallic particulate structures 121) of deposited material 1231 on the exposed surface 11 of the patterned coating 210 can exhibit at least one variation in properties and associated variations in behavior, including, but not limited to, the optical effects and properties of the device 100, as discussed herein. In some non-limiting examples, such effects and properties can be controlled to some extent by prudently selecting at least one of the characteristic size, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion of the particulate structures 121 on the patterned coating 210.

[0662] In some non-limiting examples, the formation of at least one of the characteristic dimensions, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion of such discontinuous layer 130 may be controlled in some non-limiting examples by wisely selecting at least one of the following: at least one property of patterned material 1111, average film thickness d2 of patterned coating 210, introduction of heterogeneity in patterned coating 210, and / or deposition environment, including but not limited to temperature, pressure, duration, deposition rate, and / or deposition process for patterned coating 210.

[0663] In some non-limiting examples, the formation of at least one of the characteristic dimensions, size distribution, shape, surface coverage, texture, deposition density, and / or dispersion of such discontinuous layer 130 may be controlled in some non-limiting examples by wisely selecting at least one of the following: at least one property of the particulate material (which may be deposition material 1231), the extent to which the patterned coating 210 may be exposed to the deposition of the particulate material (which may be specified in some non-limiting examples according to the thickness of the corresponding discontinuous layer 130), and / or the deposition environment, including but not limited to the temperature, pressure, duration, deposition rate, and / or deposition method of the particulate material.

[0664] In some non-limiting examples, the discontinuous layer 130 may be deposited in a certain pattern across the lateral extent of the patterned coating 210.

[0665] In some non-limiting examples, the discontinuous layer 130 may be patterned, the pattern being defined by at least one region in which there is substantially no at least one particulate structure 121.

[0666] In some non-limiting examples, the characteristics of this discontinuous layer 130 may be evaluated somewhat arbitrarily according to at least one of several criteria, including but not limited to characteristic size, size distribution, shape, texture, surface coverage, deposition distribution, dispersion, and / or the presence and / or extent of aggregates of particulate material formed on a portion of the exposed surface 11 of the underlying layer.

[0667] In some non-limiting examples, the evaluation of the discontinuity layer 130 according to at least one such criterion can be performed by using at least one of a variety of imaging techniques, including but not limited to transmission electron microscopy (TEM), atomic force microscopy (AFM), and / or scanning electron microscopy (SEM), to measure and / or calculate at least one property of the discontinuity layer 130.

[0668] Those skilled in the art will understand that such evaluation of the discontinuity layer 130 may depend to some extent (to a greater and / or lesser degree) on the exposed surface 11 under consideration, which in some non-limiting examples may include its area and / or region. In some non-limiting examples, the discontinuity layer 130 may be evaluated over the entire range of a first lateral orientation and / or a second lateral orientation substantially transverse to the first lateral orientation of the exposed surface 11. In some non-limiting examples, the discontinuity layer 130 may be evaluated over a range including at least one observation window applied to (a portion of) the discontinuity layer 130.

[0669] In some non-limiting examples, the at least one observation window may be located at at least one of the peripheral, internal, and / or grid coordinates of the lateral orientation of the exposed layer surface 11. In some non-limiting examples, multiple observation windows may be used to evaluate the discontinuous layer 130.

[0670] In some non-limiting examples, the observation window may correspond to the field of view of an imaging technique used to evaluate the discontinuous layer 130, including but not limited to at least one of TEM, AFM, and / or SEM. In some non-limiting examples, the observation window may correspond to a given magnification level, including but not limited to at least one of 2.00 μm, 1.00 μm, 500 nm, or 200 nm.

[0671] In some non-limiting examples, the evaluation of discontinuous layer 130 (including, but not limited to, at least one observation window used for its exposed layer surface 11) may involve calculations and / or measurements according to any number of mechanisms, including but not limited to manual counting and / or known estimation techniques, which in some non-limiting examples may include curve fitting, polygon fitting and / or shape fitting techniques.

[0672] In some non-limiting examples, the evaluation of discontinuous layer 130 (including, but not limited to, at least one observation window used on its exposed surface 11) may involve calculating and / or measuring the mean, median, mode, maximum, minimum, and / or other probabilistic, statistical, and / or data manipulation of the calculated and / or measured values.

[0673] In some non-limiting examples, one of the criteria used to evaluate such a discontinuous layer 130 may be the surface coverage of the deposited material 1231 on a portion...

Claims

1. A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral orientation defined by its lateral axis, the semiconductor device comprising: At least one electromagnetic (EM) radiation absorbing layer, said at least one EM radiation absorbing layer being deposited on the surface of a first layer and comprising at least one discontinuous layer with a particulate structure, said at least one particulate structure comprising a deposited material; as well as A patterned coating is disposed on the surface of the second layer, wherein: The first layer surface is the exposed surface of the patterned coating; The initial adhesion probability of the deposited material on the surface of the patterned coating is significantly less than at least one of the following: 0.3 and the initial adhesion probability of the deposited material on the surface of the second layer, such that the patterned coating is substantially free of a sealing coating of the deposited material; The at least one particulate structure of the at least one EM radiation absorbing layer promotes the absorption of EM radiation in at least a portion of at least one of the visible spectrum and ultraviolet (UV) spectrum, while substantially allowing the transmission of EM radiation in at least a portion of at least one of the infrared (IR) spectrum and near-infrared (NIR) spectrum.

2. The semiconductor device according to claim 1, wherein the deposited material is a metal.

3. The semiconductor device of claim 2, wherein the deposited material comprises at least one of magnesium, silver and ytterbium.

4. The semiconductor device of claim 1, wherein the deposited material is co-deposited with a co-deposited dielectric material.

5. The semiconductor device of claim 1, wherein the at least one particulate structure has characteristics selected from at least one of the following: size, size distribution, shape, surface coverage, structure, deposition density, and composition.

6. The semiconductor device of claim 5, wherein the at least one particle structure has a percentage coverage of at least one of about 10%-50%, 10%-45%, 12%-40%, 15%-40%, 15%-35%, 18%-35%, 20%-35%, and 20%-30%.

7. The semiconductor device of claim 5, wherein the majority of the at least one particle structure has a maximum feature size not greater than at least one of about 40 nm, 35 nm, 30 nm, 25 nm and 20 nm.

8. The semiconductor device of claim 5, wherein the at least one particle structure has a characteristic size, said characteristic size being at least one of the average and median of at least one of about 5nm-40nm, 5nm-30nm, 8nm-30nm, 10nm-30nm, 8nm-25nm, 10nm-25nm, 8nm-20nm, 10nm-20nm, 10nm-15nm, and 8nm-15nm.

9. The semiconductor device of claim 1, wherein the at least one particulate structure comprises a seed crystal, and the deposited material tends to aggregate around the seed crystal.

10. The semiconductor device of claim 1, wherein the patterned coating comprises at least one patterning material.

11. The semiconductor device of claim 1, wherein the patterned coating comprises a first patterned material having a first initial adhesion probability to the deposition of the deposited material and a second patterned material having a second initial adhesion probability to the deposition of the deposited material, wherein the first initial adhesion probability is substantially less than the second initial adhesion probability.

12. The semiconductor device of claim 11, wherein the first patterning material is a nucleation inhibition coating (NIC) material, and the second patterning material is selected from at least one of electron transport layer (ETL) materials, Liq, and lithium fluoride (LiF).

13. The semiconductor device of claim 1, wherein the at least one EM radiation absorbing layer extends across the at least one laterally oriented first portion, the semiconductor device being adapted to allow at least one EM signal to pass through the first portion at an angle relative to the layer.

14. The semiconductor device of claim 13, wherein the at least one EM signal has a wavelength range in at least a portion of at least one of the IR spectrum and the NIR spectrum.

15. The semiconductor device of claim 13, wherein the first portion is substantially free of the sealing coating of the deposited material.

16. The semiconductor device of claim 13, wherein the first portion corresponds to at least a portion of the signal transmission region.

17. The semiconductor device of claim 13, wherein the semiconductor device is adapted to receive the at least one EM signal passing through it for exchange with at least one display under-display component.

18. The semiconductor device of claim 17, wherein the at least one under-display component comprises at least one of the following: A receiver suitable for receiving; and A transmitter suitable for transmitting the at least one EM signal passing through the semiconductor device.

19. The semiconductor device of claim 18, wherein the receiver is an IR detector and the transmitter is an IR transmitter.

20. The semiconductor device of claim 18, wherein the transmitter transmits a first EM signal, and the receiver detects a second EM signal as a reflection of the first EM signal.

21. The semiconductor device of claim 20, wherein the transmission of the first EM signal and the reception of the second EM signal provide biometric authentication for the user.

22. The semiconductor device of claim 17, wherein the semiconductor device forms a display panel of a user equipment, the display panel surrounding the lower part of the display.

23. The semiconductor device of claim 13, wherein the at least one laterally oriented second portion includes at least one emission region for emitting the at least one EM signal at an angle relative to the layer.

24. The semiconductor device of claim 23, further comprising at least one semiconductive layer disposed thereon, wherein: Each emission region includes a first electrode and a second electrode. The first electrode is disposed between the substrate and the at least one semiconductive layer, and The at least one semiconducting layer is disposed between the first electrode and the second electrode.

25. The semiconductor device of claim 24, further comprising at least one sealing coating of deposited material disposed on the surface of its exposed layer in the second portion.

26. The semiconductor device of claim 25, wherein the second electrode comprises the at least one sealing coating of the deposited material.

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