Apparatus and method for forming a thin film

Abstract

The present invention relates to an apparatus and method for forming a thin film, the apparatus comprising: a chamber configured to define a substrate processing space therein; a substrate support member connected to the chamber to support a substrate within the chamber; a heat source member connected to the chamber to face the substrate support member; and a plasma generating member connected to the chamber at at least two points to supply radicals between the substrate support member and the heat source member. The present invention can improve the uniformity of a thin film formed on a substrate.

Description

Technical Field

[0001] The present invention relates to an apparatus and method for forming a thin film, and more particularly, to an apparatus and method for forming a thin film capable of improving thin film uniformity. Background Art

[0002] Recently, a rapid thermal processing (RTP) method is widely used as a method of heat-treating a substrate or the like.

[0003] Rapid thermal processing methods are methods for heat-treating a substrate by irradiating radiation emitted from a heat source, such as a tungsten lamp, onto the substrate. Compared to existing methods of heat-treating substrates using boilers, these methods offer the advantage of improving the quality of heat treatment of the substrate because the substrate is quickly heated and cooled, and pressure conditions or temperature zones can be easily controlled.

[0004] An apparatus for forming a thin film using a rapid thermal processing method includes: a chamber providing a space for primarily processing a substrate; a substrate support disposed within the chamber to support the substrate; and a plasma generator configured to activate a heat source that radiates radiation onto the substrate support and a process gas to supply the heat source and process gas into the chamber. The heat source and substrate support are mounted on the upper and lower portions of the chamber, respectively. The chamber has a short (vertical) distance between the substrate and the heat source to effectively heat the substrate, while forming a long and wide processing space in the horizontal direction. Therefore, since it is difficult to mount a plasma generator within the chamber, during thin film formation, a plasma generator located outside the chamber is used to generate radicals, which are then supplied through the sidewalls of the chamber.

[0005] However, since the processing space inside the chamber is formed long and wide in a horizontal direction, there is a limitation in that radicals are not sufficiently diffused throughout the processing space to deteriorate uniformity of a thin film.

[0006] In order to solve this limitation, a method of locally adjusting the temperature of a substrate using a heat source is used. However, in this case, there is a limitation: due to temperature deviation, the substrate is deformed by thermal stress and productivity is deteriorated.

[0007] (Prior Art Document 1) Korean Patent Registration No. 10-0775593

[0008] (Prior Art Document 2) Korean Patent Publication No. 10-2008-0114427 Summary of the Invention

[0009] Technical issues

[0010] The present invention provides an apparatus and method for forming a thin film, which can improve the uniformity of the thin film.

[0011] Technical Solution

[0012] An apparatus for forming a film according to an embodiment of the present invention includes: a chamber configured to define a substrate processing space therein; a substrate supporting member connected to the chamber to support a substrate inside the chamber; a heat source member connected to the chamber to face the substrate supporting member; and a plasma generating member connected to the chamber at at least two points to supply radicals between the substrate supporting member and the heat source member.

[0013] The chamber may be provided in a hollow shape having a width, a thickness, and a height, and the processing space is defined as having a height less than each of its width and its thickness, and the apparatus may include at least two injection ports passing through the chamber in the width direction or the thickness direction of the chamber and an exhaust port passing through the chamber to face the at least two injection ports.

[0014] The at least two injection ports may be disposed at the same height in a height direction of the chamber.

[0015] The at least two injection ports may be disposed parallel to each other, or at least one of the at least two injection ports may be disposed to be inclined in a horizontal direction.

[0016] The substrate support member may include a substrate support rotatably installed inside the chamber, and the injection portions may be spaced apart by a distance smaller than a radius of the substrate support.

[0017] The apparatus further includes a guide member disposed inside the chamber to define a channel communicating with each of the at least two injection ports.

[0018] The exhaust ports may include first exhaust ports having a spacing distance greater than a diameter of the substrate support member; and second exhaust ports disposed between the first exhaust ports.

[0019] The plasma generating component may include: a plurality of plasma generators configured to generate free radicals; and at least two waveguides configured to connect the plurality of plasma generators to the at least two injection ports, respectively.

[0020] The plasma generating component may include: a plasma generator configured to generate free radicals; and a waveguide configured to connect the plasma generator to at least two injection ports, wherein the waveguide may include at least two branches configured to connect the plasma generator to the at least two injection ports.

[0021] The plasma generating component may include a flow regulating member mounted in the waveguide.

[0022] The plasma generating component may comprise a heating member mounted on the waveguide.

[0023] A method for forming a thin film according to an embodiment of the present invention comprises: loading a substrate into a chamber; heating the substrate; generating free radicals; supplying the free radicals to one side of the substrate through at least two paths in a direction parallel to the substrate; allowing the free radicals to contact the substrate to form a thin film; and exhausting residual free radicals to the other side of the substrate.

[0024] The supplying of the radicals may include supplying the radicals at the same height in a direction in which the substrate extends.

[0025] The supplying of the radicals may include supplying the radicals from one side to the other side of the chamber through a first path including a central portion of the substrate, and supplying the radicals through a second path including an edge of the substrate.

[0026] The supply of the free radicals may include: generating the free radicals outside the chamber; and transferring the free radicals to the chamber, wherein the transferring of the free radicals may include adjusting a temperature of the free radicals.

[0027] The supply of free radicals may include adjusting a flow rate of free radicals supplied to each of the at least two pathways.

[0028] The expulsion of residual free radicals may include adjusting at least one of a location at which the residual free radicals are expelled or an amount of free radicals to be expelled.

[0029] Beneficial effects

[0030] According to the apparatus and method for forming a thin film according to embodiments of the present invention, the uniformity of the thin film can be improved. Specifically, the radicals used to form the thin film can uniformly contact the substrate, forming the thin film uniformly across the entire substrate. Furthermore, during the thin film formation process, deformation of the substrate due to thermal stress can be minimized. Consequently, process yield and productivity can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a perspective view showing an apparatus for forming a thin film according to an embodiment of the present invention.

[0032] Figure 2 To show the Figure 1 A cross-sectional view of an apparatus for forming a thin film taken along line AA' in FIG.

[0033] Figure 3 To show the Figure 1 A cross-sectional view of an apparatus for forming a thin film taken along line BB' in FIG.

[0034] Figure 4 A diagram showing a state in which the guide member is installed in the chamber.

[0035] Figure 5 FIG. 1 is a cross-sectional view illustrating an apparatus for forming a thin film according to another embodiment of the present invention.

[0036] Explanation of Figure Numbers

[0037] 100: chamber;

[0038] 110: Chamber body;

[0039] 120: transmission window;

[0040] 130: gate;

[0041] 140, 142, 144: injection port;

[0042] 150: discharge outlet;

[0043] 152a, 152b: first row of outlets;

[0044] 154: Second row exit;

[0045] 170: guide member;

[0046] 200: heat source components;

[0047] 210: Support body;

[0048] 220: heat source;

[0049] 300: substrate supporting component;

[0050] 310: shell;

[0051] 320: substrate support;

[0052] 330: driver;

[0053] 332: Rotation axis;

[0054] 340: lifting member;

[0055] 400: plasma generating components;

[0056] 410, 412, 414: plasma generator;

[0057] 420, 422, 424: waveguide;

[0058] 420a: connecting pipe;

[0059] 420b, 420c: branch pipes;

[0060] 425: flow regulating component;

[0061] 430: processor body provider;

[0062] A-A', B-B': line;

[0063] W: substrate. DETAILED DESCRIPTION

[0064] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, like reference numerals refer to like elements throughout.

[0065] Figure 1 is a perspective view showing an apparatus for forming a thin film according to an embodiment of the present invention, Figure 2 To show the Figure 1 A cross-sectional view of the apparatus for forming a thin film taken along line AA' in FIG. Figure 3 To show the Figure 1 A cross-sectional view of an apparatus for forming a thin film taken along line BB' in FIG.

[0066] refer to Figures 1 to 3 According to an embodiment of the present invention, an apparatus for forming a thin film may include a chamber 100 having a space for processing a substrate W therein, a substrate support member 300 connected to the chamber 100 to support the substrate W inside the chamber 100, a heat source member 200 connected to the chamber 100 to face the substrate support member 300, and a plasma generating member 400 that supplies radicals between the substrate support member 300 and the heat source member 200 at at least two points. Here, the heat source member 200 may be mounted on the upper portion of the chamber 100, and the substrate support member 300 may be mounted on the lower portion of the chamber 100. Here, the apparatus for forming a thin film may include a rapid thermal processing (RTP) device that irradiates radiation emitted from a heat source onto a substrate to heat the substrate.

[0067] Hereinafter, the direction in which free radicals move (e.g., the direction in which free radicals are injected into the chamber and subsequently discharged) is referred to as the thickness direction, and the direction horizontally intersecting the thickness direction with respect to the chamber 100 is referred to as the width direction. Furthermore, the vertical direction of the chamber 100 is referred to as the height direction.

[0068] The chamber 100 may include a chamber body 110 having a generally rectangular frame shape having opened upper and lower portions and a transmission window 120 connected to the upper portion of the chamber body 110 .

[0069] The chamber body 110 can be manufactured as a single unit, but it can also include a component body in which several components are connected to couple with each other. In this case, a sealing member (not shown) may be additionally provided at the connection portions between the components. Therefore, when heating or cooling the substrate W, the energy input into the apparatus can be reduced. A gate 130 for loading or unloading the substrate W may be provided in the chamber body 110. Furthermore, the chamber body 110 may include injection ports 140 (injection port 142 and injection port 144) for injecting radicals used for thin film formation, and an exhaust port 150 for exhausting gases within the chamber 110 and discharging residual radicals remaining after thin film formation. Here, the gate 130, injection port 140, and exhaust port 150 may be provided in the width direction of the chamber body 110, and the injection port 140 and exhaust port 150 may be provided so as to face each other.

[0070] The transmission window 120 may be connected to the upper portion of the chamber body 110 to seal the interior of the chamber body 110. The transmission window 120 may transmit radiation emitted from the heat source of the heat source part 200 mounted on the upper portion of the chamber 100, and may be made of a transparent material capable of withstanding high temperatures, such as quartz or sapphire.

[0071] The chamber 100 may be provided in a hollow shape having a width, a thickness, and a height so as to define a processing space capable of processing a substrate W therein. Here, the chamber 100 is configured to have a height smaller than each of the width and the thickness, and may define a processing space that is longer and wider in the horizontal direction than in the vertical direction.

[0072] At least two injection ports 140 may be provided in the chamber body 110. Two or more injection ports 140 may be provided. However, this document will describe an example in which two injection ports 140 are provided in the chamber body 110. The two injection ports 140 may be provided so as to be spaced apart from each other at the same height in the height direction of the chamber body 110. Here, the two injection ports 140 may be provided so as to be disposed at a position at least higher than the position of the substrate support 320. The two injection ports 140 may be provided so as to have a spacing distance that is smaller than the radius of the substrate W or the substrate support 320. For example, one injection port 142 of the two injection ports 140 may be provided so as to supply radicals toward the center of the substrate W or the substrate support 320, and the other injection port 144 may be provided so as to supply radicals toward the edge of the substrate W or the substrate support 320. If the spacing distance between the injection ports 140 is too long, it may be difficult to uniformly supply radicals into the chamber 100, and thus, the uniformity of the thin film disposed on the substrate W may be degraded. On the other hand, if the interval distance between the injection ports 140 is shorter, radicals may be more uniformly supplied to the chamber 100 to improve uniformity of a thin film disposed on the substrate W. However, here, there is a difficulty in connecting the waveguide 420 of the plasma generating part 400 .

[0073] The two injection ports 140 may be arranged parallel to each other. Alternatively, at least one of the two injection ports 140 may be tilted in the horizontal direction. For example, one of the two injection ports 140 may be arranged toward the center of the substrate support 320, and the other may be arranged to be tilted from the edge of the substrate support 320 toward the outside of the substrate support 320. Therefore, since the radicals diffuse in a wider area inside the chamber 100, the substrate W can be fully contacted with the radicals to further improve uniformity.

[0074] Figure 4 A diagram showing a state in which the guide member is installed in the chamber.

[0075] refer to Figure 4A guide member 170 for guiding the movement direction of free radicals may be disposed within the chamber 100. The guide member 170 may be disposed between the substrate support 320 and the injection port 140, extending in the direction along which the injection port 140 extends. The guide member 170 can guide the free radicals to move in a target direction by providing a channel communicating with the injection port 140. This allows for more precise control of the uniformity of the thin film deposited on the substrate W. The guide member 170 may be provided in the form of a partition wall extending vertically on both sides of the injection port 140, or in the form of a conduit inserted into the injection port 140. When the guide member 170 is provided in the form of a partition wall, it may be provided to completely block the gap between the injection ports 140 (injection port 142 and injection port 144), or it may be provided to partially block the portion between the injection ports 140 (injection port 142 and injection port 144). That is, the channel provided by the guide member 170 may be provided in a tube shape or may be provided in a concave groove shape. Hereinafter, an example in which the channel is provided in a tube shape having an inner diameter will be described.

[0076] The guide member 170 may provide a channel having the same inner diameter as that of the injection port 140, or may provide a channel having an inner diameter that gradually increases toward the substrate support 320. Alternatively, the guide member 170 may provide a channel having a diameter greater than that of the injection port 140, or may provide a channel having a diameter smaller than that of the injection port 140. Alternatively, the channel provided by the guide member 170 may be provided to have different diameters. For example, a channel communicating with the injection port 142 that supplies radicals toward the center of the substrate support 320 may be provided with a diameter greater than the diameter of a channel communicating with the injection port 144 that supplies radicals toward the edge of the substrate support 320. Alternatively, a channel communicating with the injection port 142 that supplies radicals toward the center of the substrate support 320 may be provided with a diameter smaller than the diameter of a channel communicating with the injection port 144 that supplies radicals toward the edge of the substrate support 320.

[0077] Here, two injection ports (142 and 144) are provided in the chamber body 110, and a guide member 170 is provided inside the chamber body 110 to guide the movement direction of the free radicals. However, a slit-shaped injection port may be provided in the chamber body, and two waveguides may be connected to the injection port. Alternatively, a guide member may be provided inside the chamber body to guide the movement direction of the free radicals injected into each of the waveguides. In this case, the guide member may be provided in a shape whose width increases toward the substrate support 320, so that the free radicals are fully diffused across the entire substrate W.

[0078] An exhaust port 150 may be provided through the chamber body 110 at a side facing the injection port 140. Here, the exhaust port 150 may be provided to face the injection port 140 so that radicals flow uniformly while contacting the surface of the substrate W inside the chamber 100. The exhaust port 150 may be connected to an exhaust line (not shown) equipped with a pump (not shown) to exhaust gas radicals inside the chamber 100 and also perform pressure control, such as forming a vacuum state inside the chamber 100. The exhaust port 150 may include at least one of a pair of first exhaust ports 152a and 152b, the pair of first exhaust ports provided with a spacing distance greater than the diameter of the substrate support 320, and one second exhaust port 154. For example, only the first exhaust ports 152a and 152b, or only the second exhaust port 154, may be provided in the chamber 100. Alternatively, both first exhaust ports (152a, 152b) may be provided in the chamber 100, and the second exhaust port 154 may be disposed between the first exhaust port 152a and the first exhaust port 152b. In this case, since the radicals injected into the chamber 100 diffuse more uniformly within the interior of the chamber 100 so as to make uniform contact across the entire substrate W, the uniformity of the thin film disposed on the substrate W may be further improved.

[0079] The first and second exhaust ports 152a and 152b, and the second exhaust port 154 may be connected to different exhaust lines. In this case, an exhaust amount adjustment member (not shown) capable of adjusting the exhaust amount is installed in each of the exhaust lines to adjust the amount of free radicals or gases discharged through each of the first and second exhaust ports 152a and 152b, and the second exhaust port 154.

[0080] The heat source part 200 is installed on an upper portion of the chamber 100 to heat the substrate W loaded into the chamber 100 . The heat source part 200 may include a hollow support body 210 having an open lower portion and a heat source 220 installed in the support body 210 .

[0081] The support body 210 may be provided to have an area similar to that of the chamber 100 or the area of ​​the processing space inside the chamber 100, and a lower portion of the support body 210 may be opened to allow radiation emitted from the heat source 220 to travel toward the chamber 100. Here, an uneven structure (not shown) such as a concave groove may be provided on the support body 210, or a reflective film (not shown) may be disposed on the support body 210 to reflect the radiation emitted from the heat source 220 toward the chamber 100. The support body 210 may include a channel (not shown) through which a cooling medium or the like circulates to prevent overheating due to the radiation emitted from the heat source 220.

[0082] The heat source 220 may include a lamp capable of emitting radiation, such as a tungsten-halogen lamp, a carbon lamp, and a ruby ​​lamp, and may be provided in various shapes, such as a linear shape or a bulb shape.

[0083] The substrate support assembly 300 may be mounted on the lower portion of the chamber 100 so as to face the heat source assembly 200. The substrate support assembly 300 may include a substrate support 320 capable of supporting a substrate W thereon and a driver 330 for rotating the substrate support 320. Furthermore, the substrate support assembly 300 may further include a lifting member 340 for vertically moving the substrate W, a temperature measuring device (not shown) for measuring the temperature of the substrate W, and the like. The substrate support assembly 300 may include a separate housing 310 and be coupled to the lower portion of the chamber 100 to seal the interior of the chamber 100.

[0084] The substrate support 320 may include an electrostatic chuck to adsorb and hold the substrate 110 using electrostatic force, thereby seating and supporting the substrate W. Alternatively, the substrate support 200 may support the substrate W by vacuum adsorption or mechanical force. The substrate support 320 may be provided in a shape corresponding to the shape of the substrate W, for example, a circular shape, and may be manufactured to be larger than the substrate W.

[0085] The driver 330 may be connected to a lower portion of the substrate support 320 through a rotation shaft 332 and may rotate the substrate W when a thin film is formed thereon.

[0086] The plasma generating part 400 includes a process gas supplier 430, a plasma generator 410 that receives power from the outside to generate plasma and activates the process gas supplied from the process gas supplier 430 to generate radicals, and a waveguide 420 that connects the plasma generator 410 to the chamber to supply radicals into the chamber 100. Here, the plasma generating part 400 may include two plasma generators 410 (i.e., Figure 4 412, 414) and two waveguides 420 (i.e. Figure 4 422, 424) to supply radicals to each of the two injection ports 140. In addition, the plasma generating component 400 may include a flow regulator (not shown) provided in at least one of the two waveguides 420 to adjust the flow rate of the radicals supplied to each injection port 140.

[0087] Plasma generating unit 400 may include a heating member (not shown) for adjusting the temperature of waveguide 420 to maintain a constant temperature of the radicals supplied from plasma generator 410 to chamber 100. Specifically, the radicals generated by plasma generator 410 may move along waveguide 420 and be supplied to chamber 100. However, when the temperature of the radicals in waveguide 420 decreases, there is a limitation in that the radicals may transition to a gaseous state due to bonding between the radicals. Therefore, a heating member (not shown) may be installed in waveguide 420 to maintain a constant temperature of the radicals.

[0088] Here, although it is described that two plasma generators 410 and two waveguides 420 are provided, when the number of the injection ports 140 is two or more (for example, three), three plasma generators 410 and three waveguides 420 may be provided.

[0089] The process gas supplier 430 can supply a gas for forming a thin film to the plasma generator 410, and can supply various process gases such as O2, N2, H2, N2O, NH3, etc. according to the type of thin film to be manufactured. Here, an example will be described in which O2 is supplied to the plasma generator 410 through the process gas supplier 430 to form an oxide film on the substrate W. The process gas supplier 430 can supply the process gas to the two plasma generators 410. In this case, the process gas supplier 430 can supply the process gas to the two plasma generators 410 at the same rate or different flow rates. In this way, the amount of radicals generated in the two plasma generators 410 can be adjusted to regulate the flow rate of the radicals supplied through the two injection ports 140.

[0090] Figure 5 FIG. 1 is a cross-sectional view illustrating an apparatus for forming a thin film according to another embodiment of the present invention.

[0091] See Figure 5 , an apparatus for forming a thin film according to another embodiment of the present invention is almost similar to the apparatus for forming a thin film according to the aforementioned embodiment, except for a plasma generating part 400 .

[0092] The plasma generating member 400 may include a plasma generator 410 for generating radicals and a waveguide 420 for connecting the plasma generator 410 to at least two injection ports 140 . The waveguide 420 may include at least two branch pipes 420 b and 420 c for connecting the plasma generator 410 to the at least two injection ports.

[0093] That is, the plasma generating unit 400 may generate radicals in one plasma generator 410 and supply the radicals to at least two injection ports 140 through one waveguide 420. Therefore, the waveguide 420 may include at least two branch pipes 420b and 420c for supplying radicals to the at least two injection ports 140. The branch pipes 420b and 420c may be provided in the same number as the number of injection ports 140. Here, an example in which two branch pipes 420b and 420c are provided in the waveguide 420 to supply radicals to the two injection ports 140 will be described.

[0094] The waveguide 420 may include a connection pipe 420a connected to the plasma generator 410 and two branch pipes 420b and 420c connected to the connection pipe 420a and respectively connected to the two injection ports 140. The waveguide 420 may be provided to have a substantially "U" shape or a "V" shape.

[0095] In addition, a flow regulating member 425 for regulating the flow rate of the free radicals may be provided in at least one of the two branch pipes 420b and the branch pipe 420c. The flow regulating member 425 may include a pendulum valve or the like and may be installed only at a position such as Figure 5 The amount of free radicals can be adjusted equally or differently through the two injection ports 140 .

[0096] Hereinafter, a method for forming a thin film according to an embodiment of the present invention will be described.

[0097] A method for forming a thin film according to an embodiment of the present invention includes a process of loading a substrate W into a chamber 100, a process of heating the substrate W, a process of generating radicals, a process of supplying the radicals to one side of the substrate W through at least two paths, a process of forming a thin film on the substrate W using the radicals, and a process of exhausting residual radicals to the other surface of the substrate W. Here, the process of forming the thin film is described as being performed in a time series, but the order may be changed variously. That is, each process may be performed in a different order or at the same time.

[0098] A substrate W prepared for thin film formation may be loaded into the chamber 100 through the gate 130 and then may be placed on the upper portion of the substrate support 320. Here, the substrate W may be a silicon substrate, and the interior of the chamber 100 may be heated to a certain temperature by the heat source part 200.

[0099] When the substrate W is placed on the substrate support 320, the gate 130 may be closed to form a vacuum state inside the chamber 100. In addition, the substrate support 320 may rotate, and the substrate W may be heated to a process temperature, for example, a temperature for forming an oxide film, by the heat source part 200.

[0100] In addition, oxygen radicals may be generated in the plasma supply unit 400 and supplied to the chamber 100 through the injection port 140. Here, the oxygen radicals may be injected and discharged simultaneously. Subsequently, the oxygen radicals injected through the injection port 140 may be discharged to the discharge port 150 through the substrate W. The oxygen radicals may be generated in the plasma generator 410 and then supplied to the chamber 100 through the waveguide 420. Here, the waveguide 420 may be heated to prevent the temperature of the oxygen radicals in the waveguide 420 from decreasing.

[0101] Oxygen radicals may be supplied into the chamber 100 through at least two injection ports 140. The oxygen radicals supplied into the chamber 100 may react with the substrate W while moving from one side of the substrate W to the other to form a thin film, such as an oxide film. Here, the oxygen radicals may be supplied through at least two paths parallel to the substrate W so that the oxygen radicals are in sufficient contact with the surface of the substrate W. The at least two paths may refer to locations where the at least two injection ports 140 are formed, and may include a first path formed at the same height in the direction in which the substrate W extends and including the center portion of the substrate W, and a second path including the edge of the substrate W.

[0102] Oxygen radicals injected into chamber 100 through the first and second paths can diffuse fully throughout the processing space within chamber 100, which is formed to be long and wide in the horizontal direction. In particular, since the oxygen radicals diffuse fully from the center to at least one edge of substrate W, the contact area with substrate W can be further increased. Since substrate W rotates during thin film formation, the oxygen radicals can fully contact substrate W, allowing a thin film (e.g., an oxide film) to be uniformly formed across the entire substrate W.

[0103] In supplying oxygen radicals into the chamber 100, the oxygen radicals may be supplied to the at least two injection ports 140 at the same flow rate, or may be supplied to the at least two injection ports 140 with different flow rates. For example, more oxygen radicals may be supplied toward the edge of the substrate support 320 rather than toward the central portion of the substrate support 320, and more oxygen radicals may be supplied toward the central portion of the substrate support 320 rather than toward the edge of the substrate support 320.

[0104] When the oxide film is formed on the substrate W, the supply of oxygen radicals may be stopped, and the rotation of the substrate support 320 may be stopped, and then the substrate W may be unloaded from the chamber 100 .

[0105] Afterward, the uniformity of the oxide film formed on substrate W is measured, and process conditions can be adjusted in subsequent processes based on the measurement results, and thin films can then be produced. For example, the flow rate of oxygen radicals supplied through at least two paths can be adjusted according to the thickness of the thin film formed on substrate W, or the location or amount of residual oxygen radicals to be discharged can be adjusted. In this way, since the thickness of the thin film formed on substrate W is locally adjusted, the uniformity of the thin film produced in subsequent processes can be improved.

[0106] Although the present invention has been described with reference to the accompanying drawings and the foregoing embodiments, the present invention is not limited thereto and is also limited to the appended claims. Therefore, it is obvious to those skilled in the art that various changes and modifications can be made within the technical spirit of the present invention.

[0107] Industrial Applicability

[0108] According to the present invention, a thin film can be uniformly formed over the entire substrate by allowing radicals for forming the thin film to uniformly contact the substrate, and deformation of the substrate due to thermal stress can be suppressed to improve process yield and productivity.

Claims

1. An apparatus for forming a thin film, the apparatus comprising: a chamber provided in a hollow shape having a width, a thickness, and a height and configured to define a substrate processing space therein; a substrate supporting member connected to the chamber to support a substrate inside the chamber; a heat source member connected to the chamber to face the substrate supporting member; a plasma generating member connected to the chamber at at least two points to supply radicals between the substrate supporting member and the heat source member; at least two injection ports passing through the chamber in a width direction or a thickness direction of the chamber; as well as an outlet passing through the chamber to face the at least two injection ports, wherein one of the at least two injection ports provides the free radicals toward the center of the substrate, and the other of the at least two injection ports provides the free radicals toward the edge of the substrate, and The exhaust port includes a pair of first exhaust ports separated by a distance greater than a diameter of the substrate support member to exhaust residual radicals. 2 . The apparatus for forming a thin film according to claim 1 , wherein the substrate processing space is defined to have a height smaller than each of a width and a thickness thereof. 3 . The apparatus for forming a thin film according to claim 2 , wherein the at least two injection ports are disposed at the same height in a height direction of the chamber. 4 . The apparatus for forming a thin film according to claim 2 , wherein the at least two injection ports are disposed parallel to each other, or at least one of the at least two injection ports is disposed to be inclined in a horizontal direction.

5. The apparatus for forming a thin film according to claim 2, wherein the substrate supporting member comprises a substrate supporting member rotatably installed inside the chamber, and The spacing distance between the at least two injection ports is smaller than the radius of the substrate support. 6 . The apparatus for forming a thin film according to claim 2 , further comprising a guide member disposed inside the chamber to define a channel communicating with each of the at least two injection ports.

7. The apparatus for forming a thin film according to claim 2, wherein the discharge port further comprises: The second discharge outlet is disposed between the pair of first discharge outlets.

8. The apparatus for forming a thin film according to claim 2, wherein the plasma generating part comprises: a plurality of plasma generators configured to generate free radicals; as well as At least two waveguides are configured to connect the plurality of plasma generators to the at least two injection ports, respectively.

9. The apparatus for forming a thin film according to claim 2, wherein the plasma generating part comprises: a plasma generator configured to generate free radicals; as well as a waveguide configured to connect the plasma generator to the at least two injection ports, The waveguide includes at least two branches configured to connect the plasma generator to the at least two injection ports. 10 . The apparatus for forming a thin film according to claim 8 , wherein the plasma generating section includes a flow rate regulating member installed in the waveguide.

11. The apparatus for forming a thin film according to claim 8 or 9, wherein the plasma generating section includes a heating member mounted on the waveguide.

12. A method for forming a thin film, the method comprising: loading a substrate into the chamber and onto a substrate support; heating the substrate; Produces free radicals; supplying the radicals to one side of the substrate through at least two paths in a direction parallel to the substrate; allowing the radicals to contact the substrate to form a thin film; as well as Expelling the residual free radicals to the other side of the substrate, wherein the chamber is provided in a hollow shape having a width, a thickness and a height, wherein said supply of said free radicals comprises: supplying the radicals from one of at least two injection ports toward the center of the substrate through a first path, wherein the first path includes a central portion of the substrate from one side to the other side of the chamber, wherein the at least two injection ports are provided through the chamber in a width direction or a thickness direction of the chamber; and supplying the radicals from another of the at least two injection ports toward the edge of the substrate through a second path including the edge of the substrate, The exhausting of the residual radicals includes exhausting the residual radicals through a pair of first exhaust ports, wherein the pair of first exhaust ports are provided through the chamber to face the at least two injection ports and have a spacing distance greater than a diameter of the substrate support member. 13 . The method for forming a thin film according to claim 12 , wherein the supplying of the radicals includes supplying the radicals at the same height in a direction in which the substrate extends.

14. The method for forming a thin film according to claim 12 or 13, wherein the supplying of the free radicals comprises: generating the free radicals outside the chamber; as well as delivering the free radicals to the chamber, wherein said transmitting of said free radicals comprises adjusting a temperature of said free radicals. 15 . The method for forming a thin film according to claim 12 , wherein the supplying of the free radicals comprises adjusting a flow rate of the free radicals supplied to each of at least two paths.

16. The method for forming a thin film according to claim 12 or 13, wherein the exhausting of the residual free radicals further comprises: discharging the residual free radicals through a second discharge port disposed between the pair of first discharge ports; as well as At least one of adjusting positions of the pair of first discharge ports and the second discharge port through which the residual radicals are discharged and adjusting an amount of the residual radicals to be discharged.

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