A light source module and a manufacturing method

Abstract

The application discloses a light source module with high light efficiency and low loss, which comprises a crystal and a carrier plate. The carrier plate is provided with a positive electrode, a negative electrode and an insulating area. The positive electrode and the crystal are connected by gold wires. The positive electrode and the negative electrode are integrally provided with a plurality of low-loss conductive structures which pass through the carrier plate. Under the premise of unchanged size of the light source module, the area of the crystal (chip) bearing area is increased, the size of the crystal is increased, and the bearing power of the crystal is increased. The bearing power of the positive electrode and the negative electrode is also increased due to the change of the size of the crystal. The current density of the crystal is greatly reduced by arranging a plurality of low-loss conductive structures in the positive electrode and the negative electrode, the heat loss is greatly reduced, and therefore the light efficiency is effectively improved. The material of the carrier plate is made of aluminum nitride. The application also discloses a manufacturing method of the light source module.

Description

Technical Field

[0001] This invention relates to the field of high-power supplementary lighting sources, such as high-power lamps for plant supplementary lighting, specifically a high-efficiency, low-loss light source module and its manufacturing method. Background Technology

[0002] Existing LED lights are mainly composed of a substrate and a chip. The substrate includes a body, a front circuit layer on the upper surface of the body, a back circuit layer on the lower surface of the body, conductive vias on the body, and a connection circuit layer on the inner wall of the conductive vias that electrically connects the front circuit layer and the back circuit layer. The chip is mounted on the front circuit layer, and the chip is electrically connected to the front circuit layer through a die bonding wire bonding process.

[0003] A standard 60W LED lighting chip carrier has only one conductive via, with a current density of 10A / mm² after copper plating. For high-power applications (such as plant supplemental lighting), traditional technology involves increasing the input power on one side of the single via to improve luminous power. However, when using a single via to connect the circuitry on both sides to achieve high-power illumination, the current density reaches 280A / mm². This results in significant power consumption at the via, with an input energy loss of approximately 10%. This significantly increases the energy loss at the via in high-power lighting modules compared to traditional lighting, leading to a substantial increase in heat generation. Consequently, larger heat dissipation components are required, directly increasing the overall size of the product and the required cooling system. Therefore, existing high-power lighting modules cannot further improve luminous efficacy while maintaining the same overall size. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings of existing technologies. Therefore, it proposes a high-efficiency, low-loss light source module and its manufacturing method. Under the premise of keeping the external dimensions of the light source module unchanged, the area of ​​the crystal (chip) carrying region is increased, the size of the crystal is increased, thereby increasing the carrying power of the crystal. At the same time, the reflective area of ​​the bottom pad of the crystal is increased, the reflectivity is increased, and the luminous efficiency is improved. Since the crystal size is changed, the carrying power of the positive and negative electrodes is also increased. By setting a low-loss conductive structure, the current density of a single via is greatly reduced, and the heat generation and power consumption are also greatly reduced. Therefore, the luminous efficiency is also effectively improved.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A high-efficiency, low-loss light source module includes a crystal and a carrier plate. The carrier plate has a positive electrode, a negative electrode, and an insulating region. The positive electrode and the crystal are connected by gold wires. Multiple low-loss conductive structures penetrating the carrier plate are integrally formed on both the positive and negative electrodes. Without changing the overall size of the light source module, the area supporting the crystal (chip) is increased, thereby increasing the crystal's size and power handling capacity. The change in crystal size also increases the power handling capacity of the positive and negative electrodes. By arranging multiple low-loss conductive structures within the positive and negative electrodes, the input current density of the crystal is significantly reduced, and heat generation and power consumption are also greatly reduced, thus effectively improving the luminous efficiency. The carrier plate is made of aluminum nitride material.

[0007] Based on the above scheme, the following improvements are made: each of the low-loss conductive structures includes a through-hole arranged on the carrier plate and a conductor integrally formed with the corresponding positive or negative electrode and located in the through-hole.

[0008] Based on the above solution, the following improvements are made: both ends of the through-hole are formed with filling regions, which are used to improve the filling degree of the conductor inside the through-hole. Since the through-hole is very small (approximately 0.1 mm in diameter), by setting the filling regions and making the filling regions have a flared structure, it is beneficial to integrate the conductor and the front and back electrodes inside the through-hole (using a combined copper plating and copper immersion process), thereby improving the filling degree of the internal conductor.

[0009] Based on the above solution, the following improvement is made: the insulating region is located on the front side of the carrier plate, and a reflective structure is formed there to surround the crystal. Surrounding the crystal with the reflective structure facilitates vertical light emission from the LED device.

[0010] Based on the above scheme, the following improvements are made: the height of the reflective structure is A, the crystal height is B, and 1 / 2*B ≤ A ≤ 2 / 3*B. Through a reflective structure of appropriate height, the light from the luminescent crystal can be reflected at the glue around the crystal, thereby improving the reflective brightness and effectively ensuring the emission angle.

[0011] Based on the above scheme, the following improvements are made: the interface between the reflective structure and the crystal side is either high at both ends and low in the middle, or high in the middle and low at both ends. This special design of the interface between the reflective structure and the crystal side allows for both ensuring the reflection angle and maintaining the reflection brightness.

[0012] Based on the above scheme, the following improvement is made: the interface between the reflective structure and the crystal side is a horizontal linear structure. This horizontal linear structure is better suited for the vertical emission of LED devices.

[0013] Based on the above solution, the following improvement is made: a heat dissipation structure is formed on the back of the carrier plate. This heat dissipation structure effectively ensures heat dissipation of the light source module and improves luminous efficiency.

[0014] A method for manufacturing a high-efficiency, low-loss light source module includes the following steps:

[0015] S100: Carrier board fabrication and copper plating: Through holes are machined on the surface of the carrier board according to the design dimensions, and copper plating and copper immersion processes are used to complete the full copper plating of the carrier board surface. At the same time, surface passivation and gold plating are also performed.

[0016] S200: Coating and etching: A protective film is applied to the copper-clad surface of the substrate and exposed. Etching solution is added to etch out the insulating area on the front side of the substrate and the heat dissipation structure on the back side of the substrate.

[0017] S300: Reflective structure formation: The crystal is electrically fixed to the negative copper-plated area on the front side of the etched substrate by silver paste, and the crystal is connected to the positive copper-plated area on the front side of the insulating area by gold wire. A multi-point spraying method is used to form a reflective structure between the crystal periphery and the insulating area. The height of the reflective structure is one-half to two-thirds of the crystal height.

[0018] S400: The reflective structure is thermoset, and finally the light source module is packaged.

[0019] The light source module structure of this application reduces the width of the insulating area between the positive and negative electrodes. This reduction in width of the aluminum nitride separator between the positive and negative electrodes results in a smaller adhesive loading area. Because the adhesive has viscosity and the nozzle aperture cannot be further reduced, a siphon effect occurs between the adhesive and the chip when the adhesive is fully sprayed. This causes the height of the adhesive around the crystal to be almost equal to the height of the light-emitting crystal. Consequently, the light from the light-emitting crystal cannot pass through the surrounding adhesive for reflection to improve brightness, and the emission angle is reduced. Therefore, traditional full-spraying methods cannot increase the crystal size while maintaining the same overall dimensions. Therefore, this application employs a multi-point spraying process. The adhesive is sprayed at specially designed locations on the crystal. After the adhesive flows, the height of the adhesive around the crystal is only one-half to two-thirds of the height of the light-emitting crystal. This allows the light from the light-emitting crystal to be reflected at the adhesive around the crystal, improving brightness and effectively ensuring the emission angle.

[0020] Based on the above scheme, the following improvements are made, and the steps for forming the reflective structure are as follows:

[0021] After the crystal and the positive electrode are electrically connected by gold wire, adhesive is applied to the four corners of the crystal in a clockwise or counterclockwise order. The adhesive application points are 300±15 micrometers away from the extension of the diagonal of the crystal. After each application, the adhesive spreads evenly outward from the application point due to gravity. When it comes into contact with the side of the crystal, a siphon effect occurs between the crystal sidewall and the adhesive, and the adhesive flows freely along the side of the crystal to the two adjacent sides of the crystal.

[0022] Based on the above scheme, the following improvements are made, and the steps for forming the reflective structure are as follows:

[0023] After the crystal and the positive electrode are electrically connected by gold wire, adhesive is applied to the center of the four sides of the crystal in a clockwise or counterclockwise order. The adhesive application points are located at 100±15 micrometers away from the extension of the diagonal of the crystal. After each application, the adhesive will first diffuse outwards due to gravity. After contacting the side of the crystal, a siphon effect occurs between the crystal periphery and the adhesive, and the adhesive will flow freely along one side of the crystal to both sides of the application point.

[0024] Based on the above scheme, the following improvements are made, and the steps for forming the reflective structure are as follows:

[0025] After the crystal and the positive electrode are electrically connected by gold wire, the adhesive is applied to the four sides of the crystal in a clockwise or counterclockwise order. During application, N equal division points are set on the four sides of the crystal and numbered N, ... (N-(N-1)). The adhesive is applied at the division point (N-1) and dragged along a straight line to the division point (N-(N-2)), where N>2. The adhesive position is located 100±15 micrometers away from the extension of the diagonal of the crystal. After each application, the adhesive will first diffuse outwards due to gravity. After contacting the side of the crystal, a siphon effect occurs between the crystal periphery and the adhesive, and the adhesive will flow freely along one side of the crystal towards the division points N and (N-(N-1)).

[0026] By applying adhesive at the four corners of the crystal, the adhesive flows freely along the crystal's sides to the two adjacent sides, making the adhesive height at the four corners higher than the height in the middle of the corresponding sides. This results in an arc-shaped structure at the top of the crystal's side reflective structure, which is high at both ends and low in the middle. Alternatively, by applying adhesive to one side of the crystal, the adhesive flows freely along the crystal's sides to both ends, making the adhesive height in the middle area of ​​that side higher than the height at the corresponding end of the side. This results in a slightly linear structure at the top of the crystal's side reflective structure, which is low at both ends and high in the middle. All three methods can achieve a reflective structure under narrow insulating conditions. This reflective structure can effectively optimize the emission angle and improve the reflective brightness.

[0027] Based on the above solution, the following improvement is made: the dispensing and glue flow processes during the formation of the reflective structure are both completed under an inert gas atmosphere. Utilizing an inert atmosphere prevents the glue from increasing in viscosity during the flow process. Attached Figure Description

[0028] Figure 1 This is a front view of the overall structure of the light source module of the present invention;

[0029] Figure 2 This is a rear view of the overall structure of the light source module of the present invention;

[0030] Figure 3 This is a cross-sectional view of the overall structure of the light source module of the present invention;

[0031] Figure 4 This is a cross-sectional view of the overall structure of the light source module with a self-filling region according to the present invention;

[0032] Figure 5 This is a partial enlarged view of the self-filling region of the light source module of the present invention;

[0033] Figure 6 This is a schematic diagram of the interface between the crystal and the reflective structure of the light source module of the present invention. Figure 1 ;

[0034] Figure 7 This is a schematic diagram of the interface between the crystal and the reflective structure of the light source module of the present invention. Figure 2 ;

[0035] Figure 8 This is a schematic diagram of the interface between the crystal and the reflective structure of the light source module of the present invention. Figure 3 ;

[0036] Figure 9 This is a schematic diagram of the interface between the crystal and the reflective structure of the light source module of the present invention. Figure 4 . Detailed Implementation

[0037] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0038] In the description of this invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0039] Example 1

[0040] A high-efficiency, low-loss light source module, such as Figures 1 to 3 As shown, the system includes a crystal 40 and a carrier plate 10. The carrier plate 10 has a positive electrode 20, a negative electrode 30, and an insulating region. The positive electrode 20 and the crystal 40 are ball-bonded together using gold wire 70. The negative electrode 30 extends from within the insulating region to its outer perimeter, further reducing the width of the insulating region from 0.13 mm to 0.1 mm, thus increasing the area supporting the crystal 40. Multiple low-loss conductive structures 50 are integrally formed on both the positive electrode 20 and the negative electrode 30, penetrating the carrier plate 10. By increasing the area supporting the crystal 40 (chip) and its size, the power carrying capacity of the crystal 40 is increased, while the size of the crystal 40 is also increased. The change in the crystal 40's size also increases the power carrying capacity of the positive and negative electrodes 30. By arranging multiple low-loss conductive structures 50 within the positive and negative electrodes 30, the input current density of the crystal 40 is significantly reduced, and the heat dissipation is also greatly reduced, thus effectively improving the luminous efficiency. The carrier plate 10 is made of aluminum nitride. Taking three low-loss conductive structures 50 as an example, when the input power of a single light-emitting chip is 1.4W, the current density is reduced from 280A / mm² in the single-hole scheme to 93A / mm² in the scheme with multiple low-loss conductive structures 50. The heat dissipation is also significantly reduced, and the luminous efficiency is greatly improved. Among them, the positive electrode 20, the negative electrode 30, and the low-loss conductive structure 50 are formed by a combination of copper plating and copper immersion processes, and the insulating area is formed by etching with an etchant.

[0041] Example 2

[0042] Based on the above scheme, the following improvements are made, such as Figure 3 As shown, each of the low-loss conductive structures 50 includes a through-hole 52 disposed on the carrier plate 10 and a conductor 51 integrally formed with the corresponding positive electrode 20 or negative electrode 30 and located within the through-hole 52. Low-loss conductive connection between the positive and negative circuits is achieved through the through-hole 52 and the conductor 51 (copper) filling it.

[0043] Example 3

[0044] Based on the above scheme, the following improvements are made, such as Figure 4As shown, self-filling regions 53 are formed at both ends of the through-hole 52, and the self-filling regions 53 are used to improve the filling degree of the conductor 51 inside the through-hole 52. Since the through-hole 52 is too small (approximately 0.1 mm in diameter), insufficient filling degree is likely to occur during copper plating and copper immersion. By setting the self-filling regions 53 and the self-filling regions 53 having a flared structure, it is beneficial to integrate the conductor 51 and the front and back electrodes inside the through-hole 52 (using a combined copper plating and copper immersion process), thereby improving the filling degree of the internal conductor 51.

[0045] Example 4

[0046] Based on the above scheme, the following improvements are made, such as Figure 3 As shown, the insulating area is located on the front side of the carrier plate 10, where a reflective structure 80 is formed to surround the crystal 40. A heat dissipation structure 60 is formed on the back side of the carrier plate 10. The height of the reflective structure 80 is A, and the height of the crystal 40 is B, where 1 / 2*B≤A≤2 / 3*B. The heat dissipation structure 60 is also etched by the etching solution, which can ensure the heat dissipation effect of the LED chip. Through the reflective structure 80 of appropriate height, the light from the light-emitting crystal 40 can be reflected at the glue (thermosetting optoelectronic element reflective material) around the crystal 40, increasing the reflective area of ​​the bottom pad of the crystal 40, thereby improving the reflective brightness and effectively ensuring the light emission angle.

[0047] Example 5

[0048] Based on the above scheme, the following improvements are made, such as Figure 5 As shown, the interface between the reflective structure 80 and the side of the crystal 40 is a linear structure with high ends and low middle, high middle and low ends, or horizontal. This special design of the three structural forms of the interface between the reflective structure 80 and the side of the crystal 40 allows for both improved reflectivity and guaranteed reflection angle.

[0049] Example 6

[0050] A method for manufacturing a high-efficiency, low-loss light source module includes the following steps:

[0051] S100: Carrier board 10 fabrication and copper plating: Through holes 52 are machined on the surface of the carrier board 10 according to the design dimensions, and copper plating is completed on the entire surface of the carrier board 10 using a combination of copper plating and copper immersion processes. At the same time, surface passivation and gold plating are also performed.

[0052] S200: Coating and etching: A protective film is coated and exposed on the copper-clad surface of the carrier board 10, and etching solution is added to etch out the insulating area on the front side of the carrier board 10 and the heat dissipation structure 60 on the back side of the carrier board 10.

[0053] S300: Formation of reflective structure 80: The crystal 40 is electrically fixed to the copper-plated area of ​​the negative electrode 30 on the front side of the etched carrier 10 by silver paste, and the crystal 40 is connected to the copper-plated area of ​​the positive electrode 20 on the front side of the insulating area by gold wire 70. A reflective structure 80 is formed between the outer periphery of the crystal 40 and the insulating area by multi-point spraying. The height of the reflective structure 80 is one-half to two-thirds of the height of the crystal 40.

[0054] S400: The reflective structure is cured at 80°C, and finally the light source module is packaged.

[0055] The light source module structure of this application reduces the width of the insulating area between the positive and negative electrodes 30 on the front side of the aluminum nitride substrate 10. This reduced width (aluminum nitride separation area) results in a smaller adhesive loading area. Because the adhesive viscosity and nozzle aperture cannot be further reduced, a siphon effect occurs between the adhesive and the crystal 40 when the adhesive is fully sprayed. This makes the height of the adhesive around the crystal 40 almost equal to the height of the light-emitting crystal 40. Consequently, the light from the light-emitting crystal 40 cannot pass through the surrounding adhesive and is reflected to increase brightness and reduce the emission angle. Therefore, the traditional full-spray method cannot meet the requirement of increasing the size of the crystal 40 without changing the overall dimensions. Therefore, this application uses a multi-point spraying process. The adhesive is sprayed at specially designed locations on the crystal 40. After the siphon effect occurs between the adhesive and the crystal 40, the height of the adhesive around the crystal 40 is only one-half to two-thirds of the height of the light-emitting crystal 40. The light from the light-emitting crystal 40 can be reflected at the adhesive around the crystal 40 to increase brightness and reduce the emission angle.

[0056] Example 7

[0057] Based on the above scheme, the following improvements are made: the formation steps of the reflective structure 80 are as follows: After the crystal 40 and the positive electrode 20 are electrically connected by gold wire 70, adhesive is applied sequentially at the four corners near the crystal 40 in a clockwise or counterclockwise order. The adhesive application points are located at a distance of 300±15 micrometers from the extension of the diagonal of the crystal 40. After each application, the adhesive diffuses evenly outward from the application point due to gravity. When it contacts the side of the crystal 40, a siphon effect occurs between the side of the crystal 40 and the adhesive, and the adhesive flows freely along the side of the crystal 40 to the two adjacent sides. This forms a bonding surface with a high point at the four corners of the crystal 40 and a low point in the middle, thereby improving the luminous brightness and reducing the luminous angle.

[0058] Example 8

[0059] Based on the above scheme, the following improvements are made: the formation steps of the reflective structure 80 are as follows: After the crystal 40 and the positive electrode 20 are electrically connected via gold wire 70, adhesive is applied sequentially in a clockwise or counterclockwise order to the center of the four sides near the crystal 40. The adhesive application points are located at a distance of 100±15 micrometers from the extension of the diagonal line of the crystal 40. After each application, the adhesive diffuses outwards due to gravity. Upon contact with the side of the crystal 40, a siphon effect occurs between the outer edge of the crystal 40 and the adhesive, causing the adhesive to flow freely along one side of the crystal 40 towards both sides of the application point. This forms a bonding surface with a higher center and lower ends on the sides of the crystal 40, thereby improving the luminous brightness and reducing the luminous angle.

[0060] Example 9

[0061] Based on the above scheme, the following improvements are made. The steps for forming the reflective structure 80 are as follows: After the crystal 40 and the positive electrode 20 are electrically connected by the gold wire 70, the glue is applied in a clockwise or counterclockwise order to the four sides of the crystal 40. During glue application, N equal division points are arranged on the four sides of the crystal 40 and numbered N, ... (N-(N-1)). At the division point (N-1), the glue is applied and dragged along a straight line to the division point (N-(N-2)). N>2. The glue application position is located at 100±15 micrometers away from the extension of the diagonal of the crystal 40. After each glue application, the glue will first diffuse outwards due to gravity. After contacting the side of the crystal 40, the outer periphery of the crystal 40 and the glue will have a siphon effect. The glue will flow freely along one side of the crystal 40 towards the division points N and (N-(N-1)). Taking N=4 as an example, after spraying glue at point 2, the glue is moved along the side of crystal 40 to point 3, and finally the glue flows freely to points 1 and 4. The more points there are, the closer the top of the interface between the reflective structure 80 and crystal 40 is to a horizontal linear structure.

[0062] By applying adhesive at the four corners of the crystal 40, the adhesive flows freely along the sides of the crystal 40 to the two adjacent sides, making the height of the adhesive at the four corners higher than the height of the middle of the corresponding side. This results in an arc-shaped structure with high ends and low middle at the top of the side reflective structure 80 of the crystal 40. Alternatively, by applying adhesive to one side of the crystal 40, the adhesive flows freely along the side of the crystal 40 to both ends, making the height of the adhesive in the middle area of ​​one side higher than the height of the corresponding side end. This results in a slightly linear structure with low ends and high middle at the top of the side reflective structure 80 of the crystal 40. All three methods can achieve the formation of a reflective structure 80 under narrow insulation conditions. This reflective structure 80 can effectively optimize the light emission angle and improve the reflective brightness.

[0063] Example 10

[0064] Based on the above scheme, the following improvements are made: the dispensing and glue flow processes during the formation of the reflective structure 80 are both completed under an inert gas atmosphere. Using an inert atmosphere (nitrogen) can prevent the glue viscosity from increasing during the flow process.

[0065] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. The substitutions may be replacements of some structures, devices, or method steps, or they may be complete technical solutions. Equivalent substitutions or modifications made to the technical solutions and inventive concepts of the present invention should all be covered within the scope of protection of the present invention.

Claims

1. A light source module, comprising a chip (40) and a carrier plate (10), wherein a positive electrode (20), a negative electrode (30), and an insulating region are formed on the carrier plate (10), and the positive electrode (20) and the chip (40) are connected by gold wires (70), characterized in that, Multiple conductive structures (50) with overpass plates (10) are integrally formed on both the positive electrode (20) and the negative electrode (30). Three conductive structures (50) are provided; The insulating region is located on the front side of the carrier plate (10) and a reflective structure (80) is formed thereon wrapping around the chip (40). The height of the reflective structure (80) is A, and the height of the chip (40) is B, 1 / 2*B≤A≤2 / 3*B; After the chip (40) and the positive electrode (20) are electrically connected by gold wire (70), glue is applied to the four corners of the chip (40) in a clockwise or counterclockwise order. The glue application position is 300±15 micrometers away from the extension of the diagonal of the chip (40). After each glue application, the glue first spreads evenly outward from the glue application position due to gravity. When it comes into contact with the side of the chip (40), the side of the chip (40) and the glue have a siphon effect. The glue flows freely along the side of the chip (40) to the two adjacent sides of the chip (40) to form a reflective structure (80). A structure with high ends and low middle is formed at the interface between the reflective structure (80) and the side of the chip (40).

2. The light source module according to claim 1, characterized in that, Each of the conductive structures (50) includes a through-hole (52) disposed on the carrier plate (10) and a conductor (51) integrally formed with the corresponding positive electrode (20) or negative electrode (30) and located within the through-hole (52).

3. A light source module according to claim 2, characterized in that, Both ends of the through-hole (52) are formed with self-filling regions (53), and the self-filling regions (53) are used to improve the filling degree of the conductor (51) inside the through-hole (52).

4. A light source module according to claim 1, characterized in that, A heat dissipation structure (60) is formed on the back of the carrier plate (10).

5. A light source module, comprising a chip (40) and a carrier plate (10), wherein a positive electrode (20), a negative electrode (30), and an insulating region are formed on the carrier plate (10), and the positive electrode (20) and the chip (40) are connected by gold wires (70), characterized in that, Multiple conductive structures (50) with overpass plates (10) are integrally formed on both the positive electrode (20) and the negative electrode (30). Three conductive structures (50) are provided; The insulating region is located on the front side of the carrier plate (10) and a reflective structure (80) is formed thereon wrapping around the chip (40). The height of the reflective structure (80) is A, and the height of the chip (40) is B, 1 / 2*B≤A≤2 / 3*B; After the chip (40) and the positive electrode (20) are electrically connected by gold wire (70), adhesive is applied to the middle of the four sides of the chip (40) in a clockwise or counterclockwise order. The adhesive application position is located at 100±15 micrometers away from the extension of the diagonal line of the chip (40). After each adhesive application, the adhesive will first diffuse to the outside by gravity. After contacting the side of the chip (40), the periphery of the chip (40) and the adhesive will have a siphon effect. The adhesive will flow freely along one side of the chip (40) to both sides of the adhesive application point, forming a reflective structure (80). A structure with a high middle and low ends is formed at the interface between the reflective structure (80) and the side of the chip (40).

6. A light source module according to claim 5, characterized in that, Each of the conductive structures (50) includes a through-hole (52) disposed on the carrier plate (10) and a conductor (51) integrally formed with the corresponding positive electrode (20) or negative electrode (30) and located within the through-hole (52).

7. A light source module according to claim 6, characterized in that, Both ends of the through-hole (52) are formed with self-filling regions (53), and the self-filling regions (53) are used to improve the filling degree of the conductor (51) inside the through-hole (52).

8. A light source module according to claim 5, characterized in that, A heat dissipation structure (60) is formed on the back of the carrier plate (10).

9. A method for manufacturing a light source module, characterized in that, The steps are as follows: S100: Carrier board (10) fabrication and copper plating: Through holes (52) are processed on the surface of the carrier board (10) according to the design dimensions, and copper plating is completed on the entire surface of the carrier board (10) using a combination of copper plating and copper plating processes. At the same time, surface passivation and gold plating are also performed. S200: Coating and etching: A protective film is applied to the copper-clad surface of the carrier board (10) and exposed. Etching solution is added to etch out the insulating area on the front side of the carrier board (10) and the heat dissipation structure (60) on the back side of the carrier board (10). S300: Reflective structure (80) formation: The chip (40) is electrically fixed to the copper-plated area of ​​the negative electrode (30) on the front side of the etched substrate (10) by silver paste, and the chip (40) is connected to the copper-plated area of ​​the positive electrode (20) on the front side of the insulating area by gold wire (70). A reflective structure (80) is formed between the periphery of the chip (40) and the insulating area using a multi-point spraying method. The height of the reflective structure (80) is one-half to two-thirds of the height of the chip (40). The specific steps are as follows: Apply adhesive in a clockwise or counterclockwise order at the four corners of the chip (40). The adhesive application location is 300±15 micrometers away from the extended diagonal line of the chip (40). After each application, the adhesive spreads evenly outward from the application location due to gravity. When it comes into contact with the side of the chip (40), the side of the chip (40) and the adhesive have a siphon effect. The adhesive flows freely along the side of the chip (40) to the two adjacent sides of the chip (40) to form a reflective structure (80). A structure with high ends and low middle is formed at the interface between the reflective structure (80) and the side of the chip (40). S400: The reflective structure (80) is thermoset, and finally the light source module is packaged.

10. A method for manufacturing a light source module according to claim 9, characterized in that, The dispensing and glue flow processes during the formation of the reflective structure (80) are both completed in an inert gas atmosphere.

11. A method for manufacturing a light source module, characterized in that, The steps are as follows: S100: Carrier board (10) fabrication and copper plating: Through holes (52) are processed on the surface of the carrier board (10) according to the design dimensions, and copper plating is completed on the entire surface of the carrier board (10) using a combination of copper plating and copper plating processes. At the same time, surface passivation and gold plating are also performed. S200: Coating and etching: A protective film is applied to the copper-clad surface of the carrier board (10) and exposed. Etching solution is added to etch out the insulating area on the front side of the carrier board (10) and the heat dissipation structure (60) on the back side of the carrier board (10). S300: Reflective structure (80) formation: The chip (40) is electrically fixed to the copper-plated area of ​​the negative electrode (30) on the front side of the etched substrate (10) by silver paste, and the chip (40) is connected to the copper-plated area of ​​the positive electrode (20) on the front side of the insulating area by gold wire (70). A reflective structure (80) is formed between the periphery of the chip (40) and the insulating area using a multi-point spraying method. The height of the reflective structure (80) is one-half to two-thirds of the height of the chip (40). The specific steps are as follows: Apply adhesive in a clockwise or counterclockwise order to the center of the four sides of the chip (40). The adhesive application point is located 100±15 micrometers away from the extended diagonal line of the chip (40). After each application, the adhesive will first diffuse outwards by gravity. After contacting the side of the chip (40), the outer edge of the chip (40) and the adhesive will have a siphon effect. The adhesive will flow freely along one side of the chip (40) to both sides of the adhesive application point, forming a reflective structure (80). A structure with a high center and low ends is formed at the interface between the reflective structure (80) and the side of the chip (40). S400: The reflective structure (80) is thermoset, and finally the light source module is packaged.

12. A method for manufacturing a light source module according to claim 11, characterized in that, The dispensing and glue flow processes during the formation of the reflective structure (80) are both completed in an inert gas atmosphere.

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