Multi-bandwidth regulated photodetector assembly

Abstract

The application provides a multistage bandwidth regulation photodetector assembly, which comprises a first printed circuit board, a second printed circuit board, and a first printed circuit board electrically connected with the second printed circuit board; the second printed circuit board is printed with a first open loop circuit, and the first open loop circuit comprises at least one resistor which is connected in series; a third printed circuit board is electrically connected with the second printed circuit board; the third printed circuit board is printed with a second open loop circuit, and the second open loop circuit comprises at least one capacitor which is connected in series; a photodetector is arranged on the surface of the first printed circuit board and is electrically connected with the first open loop circuit and the second open loop circuit respectively; and a thin film circuit is arranged on the surface of the first printed circuit board and is electrically connected with the photodetector. The multistage bandwidth regulation photodetector assembly has a simple structure and stable circuit connection, and the resistance and capacitance of the assembly can be actively regulated, so that the bandwidth of the assembly can be autonomously regulated.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photoelectric detection, in particular, to a multi-stage bandwidth regulation photoelectric detector assembly. BACKGROUND

[0002] In recent years, in order to further improve the transmission rate and capacity, fully tap the bandwidth advantage of optical communication, various advanced modulation formats, multi-dimensional multiplexing methods are widely used. Correspondingly, new requirements are put forward for the performance indicators of the key optoelectronic devices involved. High-speed, high-capacity communication systems need large bandwidth detectors as support, and multi-dimensional full-field communication technology requires higher power bearing capacity of the device. In addition, in the application of data center, analog communication and microwave photonics, there are also high requirements for the bandwidth and power bearing capacity of the detector.

[0003] The development of optical communication systems and the demand for large-capacity information transmission are the main driving force for the development of optical detectors. The development of transmission systems to higher capacity and the progress of microwave photonics promote the development of photoelectric detectors to higher bandwidth. How to obtain higher bandwidth without sacrificing other performance of optical detectors such as responsivity and noise, the selection of optical detector materials, device design, packaging problems and testing methods all pose challenges.

[0004] In the field of microwave photonics, the circuit (packaging parasitic network) connected in parallel with the photoelectric detector will have a shunt effect on the photocurrent, especially at higher operating frequencies, the parasitic network will shunt more photocurrent, resulting in a decrease in the high-frequency response of the photoelectric detector, and the compensation effect between the packaging parasitic parameters can improve the performance of the assembly, so the controllable bandwidth regulation photoelectric detector assembly is a research hotspot in the future. SUMMARY

[0005] (I) Technical problems to be solved

[0006] In view of the above problems, the present application provides a multi-stage bandwidth regulation photoelectric detector assembly, by embedding a number of controllable and series connected resistors and capacitors in the second open circuit and the third open circuit respectively, and connecting the thin film circuit with different contacts of the first printed circuit board through gold wire bonding, the resistance and capacitance of the assembly are actively regulated, thereby introducing the resonance effect to compensate for the falloff of the photoelectric detector assembly at high frequencies, improving the bandwidth of the photoelectric detector assembly, and realizing the autonomous regulation of the bandwidth of the multi-stage bandwidth regulation photoelectric detector assembly.

[0007] (II) Technical solutions

[0008] In one aspect of the embodiment of the present application, a multi-stage bandwidth regulation photodetector assembly is provided, comprising: a first printed circuit board; a second printed circuit board, electrically connected with the first printed circuit board; the second printed circuit board is printed with a first open loop circuit, the first open loop circuit comprising at least one resistor, the at least one resistor being connected in series; a third printed circuit board, electrically connected with the second printed circuit board; the third printed circuit board is printed with a second open loop circuit, the second open loop circuit comprising at least one capacitor, the at least one capacitor being connected in series; a photodetector, arranged on the surface of the first printed circuit board and electrically connected with the first open loop circuit and the second open loop circuit respectively, for converting an incident optical signal into an electrical signal; a thin film circuit, arranged on the surface of the first printed circuit board and electrically connected with the photodetector, for transmitting the electrical signal; wherein, by closing the first open loop circuit and the second open loop circuit, the resistance value of the resistor and the capacitance value of the capacitor are adjusted to generate a resonance effect in the thin film circuit, thereby completing the bandwidth regulation of the photodetector assembly; the multi-stage bandwidth regulation photodetector assembly provided by the embodiment of the present application realizes active regulation of the resistance value and the capacitance value of the assembly by embedding a number of controllable and series-connected resistors and capacitors in the second open loop circuit and the third open loop circuit and connecting the thin film circuit with different contacts of the first printed circuit board through gold wire bonding, thereby introducing a resonance effect to compensate for the fading of the photodetector assembly at high frequencies and improving the bandwidth of the photodetector assembly, and finally realizing autonomous regulation of the bandwidth of the multi-stage bandwidth regulation photodetector assembly.

[0009] In one embodiment of the present application, the surface of the first printed circuit board is provided with a first through hole for connecting the first printed circuit board and the second printed circuit board; the surface of the second printed circuit board is provided with a second through hole for connecting the second printed circuit board and the third printed circuit board; the inner walls of the first through hole and the second through hole are metallized; the first open loop circuit is electrically connected with the first through hole; the second open loop circuit is electrically connected with the first through hole through the second through hole; the photodetector is electrically connected with the first open loop circuit and the second open loop circuit respectively through the first through hole; the thin film circuit completes circuit closing through gold wire bonding with the first through hole; the multi-stage bandwidth regulation photodetector assembly provided by the embodiment of the present application connects the photodetector, the thin film circuit, the capacitor and the resistor through the combination of the through holes on the multi-stage printed circuit boards and gold wire bonding, thereby overcoming the instability and complexity of the traditional photodetector assembly connected only by gold wire bonding, reducing the negative effects of resonance introduced by the overlong gold wire, and avoiding the short circuit caused by different gold wire contacts.

[0010] In one embodiment of the present application, the first open loop circuit comprises 1-50 resistors, and the resistance value of the resistor is 1-10Ω.

[0011] In one embodiment of the present application, the second open loop circuit comprises 1-50 capacitors, and the capacitance value of the capacitor is 1-10pF.

[0012] In an embodiment of the present application, the material of the first printed circuit board, the material of the second printed circuit board and the material of the third printed circuit board are polyimide resin glass fiber or epoxy glass fiber.

[0013] In an embodiment of the present application, the material of the photodetector is indium gallium arsenide or indium phosphide.

[0014] In an embodiment of the present application, the material of the thin film circuit is gold, and the substrate material of the thin film circuit is aluminum nitride.

[0015] In an embodiment of the present application, the photodetector is fixed to the surface of the first printed circuit board through silver glue, and the thin film circuit is fixed to the surface of the first printed circuit board through ultraviolet curing glue.

[0016] In an embodiment of the present application, the P electrode of the photodetector is bonded with the signal line of the thin film circuit through gold wire, and the N electrode of the photodetector is bonded with the ground wire of the thin film circuit through gold wire.

[0017] In an embodiment of the present application, the surface of the first printed circuit board is provided with a right-angle slot corresponding in size to the photodetector and the thin film circuit, and the photodetector and the thin film circuit are fixed to the surface of the first printed circuit board through the right-angle slot.

[0018] (Three) beneficial effects

[0019] The multi-level bandwidth regulation photodetector assembly provided by the embodiment of the present application has at least the following beneficial effects:

[0020] (1) The multi-level bandwidth regulation photodetector assembly provided by the embodiment of the present application introduces a resonance effect to compensate for the fading of the photodetector assembly at high frequencies by actively regulating the resistance value of the resistance and the capacitance value of the capacitor, thereby improving the bandwidth of the photodetector assembly and ultimately realizing autonomous regulation of the bandwidth of the photodetector assembly.

[0021] (2) The multi-level bandwidth regulation photodetector assembly provided by the embodiment of the present application connects the photodetector, the thin film circuit, the capacitor and the resistance through the combination of the through hole on the multi-level printed circuit board and the gold wire bonding, thereby overcoming the instability and complexity of the traditional photodetector assembly connected only by gold wire bonding, reducing the negative effects of resonance introduced by the overlong gold wire, and avoiding the short circuit defect of different gold wire contacts.

[0022] (3) The multi-bandwidth regulation photodetector assembly provided by the embodiment of the present application is more compact by embedding resistors and capacitors in the second open circuit and the third open circuit respectively, and avoids the shortcomings of large structure size and low yield of traditional soldered resistor and capacitor elements. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort on the basis of these drawings.

[0024] Figure 1 The structural diagram of the multi-bandwidth regulation photodetector assembly provided by the embodiment of the present application is schematically shown.

[0025] Figure 2 The structural diagram of the multi-bandwidth regulation photodetector assembly provided by the embodiment of the present application is schematically shown.

[0026] Figure 3 The top view of the first printed circuit board of the multi-bandwidth regulation photodetector assembly provided by the embodiment of the present application is schematically shown.

[0027] Figure 4 The top view of the second printed circuit board of the multi-bandwidth regulation photodetector assembly provided by the embodiment of the present application is schematically shown.

[0028] Figure 5 The top view of the third printed circuit board of the multi-bandwidth regulation photodetector assembly provided by the embodiment of the present application is schematically shown.

[0029] Figure 6 The equivalent circuit diagram of the multi-bandwidth regulation photodetector assembly provided by the embodiment of the present application is schematically shown.

[0030] REFERENCE NUMERALS

[0031] 1 - first printed circuit board; 11 - first through hole; 12 - right-angle slot;

[0032] 2 - second printed circuit board; 21 - first open circuit; 22 - resistor; 23 - second through hole;

[0033] 3 - third printed circuit board; 31 - second open circuit; 32 - capacitor;

[0034] 4 - photodetector;

[0035] 5 - thin film circuit. DETAILED DESCRIPTION

[0036] The objectives, technical solutions and advantages of the present application will become more apparent after a reading of the following detailed description together with the attached drawings. It is obvious that the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative efforts fall into the scope of the present application. The terms used herein are only used to describe the specific embodiments, but not intended to limit the present application. The terms "comprising", "including", etc. used herein indicate the presence of the stated features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.

[0037] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected or can communicate with each other; can be directly connected, or can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0038] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "longitudinal", "length", "circumferential", "front", "back", "left", "right", "top", "bottom", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the subsystems or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0039] Throughout the drawings, the same elements are denoted by the same or similar reference numerals. When it may cause confusion in understanding the present application, the conventional structure or configuration will be omitted. And the shape, size, positional relationship of each component in the drawing does not reflect the true size, proportion and actual positional relationship. In addition, in the claims, any reference symbol located between parentheses should not be construed as a limitation on the claims.

[0040] Similarly, to simplify the present application and to help understand one or more of the various inventive aspects, in the above description of illustrative embodiments of the present application, various features of the present application are sometimes grouped together in a single embodiment, figure, or description of illustrated embodiments. Reference throughout this specification to "an embodiment", "some embodiments", "one embodiment", "an example", "a specific example", or "some examples", etc., means that a particular feature, structure, material, or characteristic being described in connection with the embodiment or example is included in at least one embodiment or example of the present application. Thus, the appearances of the phrases "in one embodiment", "in some embodiments", "in an example", "in a specific example", or "in some examples", etc., in various places in the specification are not necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples.

[0041] Furthermore, the terms "first", "second", etc., are used herein only to describe various features, and do not imply a relative importance or a specific order of characteristics being recited. For example, a feature described as "second" can also be termed a "first" feature; likewise, a feature described as a "first" feature can also be termed a "second" feature. Thus, the use of the terms "first" and "second" does not denote an order or significance to the characteristics so described, but instead are used only to distinguish one feature from another. In the description of the present application, the meaning of "a plurality" is at least two, for example, two, three, etc., unless otherwise specifically defined.

[0042] Figure 1 A structure diagram of a multi-bandwidth regulation photodetector assembly provided by an embodiment of the present application is schematically shown.

[0043] As shown in Figure 1 A first embodiment of the present application provides a multi-bandwidth regulation photodetector assembly, which can include: a first printed circuit board 1, a second printed circuit board 2, a third printed circuit board 3, a photodetector 4, and a thin film circuit 5.

[0044] Wherein, as viewed from the direction shown in Figure 1 The first printed circuit board 1 is arranged at the uppermost layer.

[0045] The second printed circuit board 2 is electrically connected with the first printed circuit board 1. The second printed circuit board 2 is printed with a first open-loop circuit 21, and the first open-loop circuit 21 includes at least one resistor 22, which is connected in series.

[0046] The third printed circuit board 3 is electrically connected with the second printed circuit board 2. The third printed circuit board 3 is printed with a second open-loop circuit 31, and the second open-loop circuit 31 includes at least one capacitor 32, which is connected in series.

[0047] The photodetector 4 is arranged on the surface of the first printed circuit board 1, and is electrically connected with the first open-loop circuit 21 and the second open-loop circuit 31 respectively, for converting the incident light signal into an electric signal.

[0048] The thin film circuit 5 is arranged on the surface of the first printed circuit board 1 and is electrically connected with the photodetector 4 and is used for transmitting electric signals.

[0049] The multi-stage bandwidth regulation photodetector assembly provided by the embodiment of the present application can introduce resonance effect to compensate the fading of the photodetector assembly at high frequency by adjusting the resistance and capacitance of the multi-stage bandwidth regulation photodetector assembly, thereby improving the bandwidth of the photodetector assembly and finally realizing the autonomous regulation of the bandwidth of the multi-stage bandwidth regulation photodetector assembly.

[0050] Figure 2 The structure of the multi-stage bandwidth regulation photodetector assembly provided by the embodiment of the present application is schematically shown.

[0051] As shown in Figure 2 The multi-stage bandwidth regulation photodetector assembly provided by the second embodiment of the present application can include a first printed circuit board 1, a second printed circuit board 2, a third printed circuit board 3, a photodetector 4 and a thin film circuit 5.

[0052] The two sides and the top end of the surface of the first printed circuit board 1 are provided with a first through hole 11, and the first through hole 11 is used for connecting the first printed circuit board 1 and the second printed circuit board 2.

[0053] One side of the surface of the second printed circuit board 2 is provided with a second through hole 23, and the second through hole 23 is used for connecting the second printed circuit board 2 and the third printed circuit board 3. The second printed circuit board 2 is printed with a first open circuit 21, and the first open circuit 21 includes at least one resistor 22, and the at least one resistor 22 is connected in series.

[0054] The third printed circuit board 3 and the second printed circuit board 2 are electrically connected through the second through hole 23. The third printed circuit board 3 is printed with a second open loop circuit 31, and the second open loop circuit 31 comprises at least one capacitor 32 connected in series. The first open loop circuit 21 is electrically connected with the first through hole 11 on both sides of the surface of the first printed circuit board 1; the second open loop circuit 31 is electrically connected with the first through hole 11 through the second through hole 23 on one side of the surface of the second printed circuit board 2. The material of the first printed circuit board 1, the material of the second printed circuit board 2 and the material of the third printed circuit board 3 are polyimide resin glass fiber or epoxy glass fiber; the size of the first printed circuit board 1, the size of the second printed circuit board 2 and the size of the third printed circuit board 3 are 4mm*10mm*2mm. The inner wall and the side of the first through hole 11 and the second through hole 23 are metallized with copper or gold; the diameter of the first through hole 11 on both sides of the surface of the first printed circuit board 1 and the second through hole 23 on one side of the surface of the second printed circuit board 2 is 10um, and the pitch is 410um.

[0055] The photodetector 4 is arranged on the surface of the first printed circuit board 1 and is electrically connected with the first open loop circuit 21 and the second open loop circuit 31 through the first through hole 11 at the top of the surface of the first printed circuit board 1. The material of the photodetector 4 is indium gallium arsenide or indium phosphide; the size of the photodetector 4 is 300um*300um*200um, and the light-sensitive surface diameter of the photodetector 4 is 200um. The photodetector 4 is used for receiving an input optical signal and converting it into an output electrical signal, and the output electrical signal is transmitted to the thin film circuit 5 through gold wire bonding.

[0056] The thin film circuit 5 is arranged on the surface of the first printed circuit board 1 and is connected with the photodetector 4 through gold wire bonding, and is used for transmitting an electrical signal. The material of the thin film circuit 5 is gold, the base material of the thin film circuit 5 is aluminum nitride, and the size of the thin film circuit 5 is 2.5mm*9mm*0.2mm.

[0057] After the circuit connection of the multi-stage bandwidth regulation photodetector assembly is completed, the appropriate first through hole 11 (corresponding to different sizes of resistors 22 and capacitors 32) is gold wire bonded with the electrode of the thin film circuit 5, the resonance effect is introduced to compensate for the fading of the photodetector assembly at high frequencies, thereby realizing the self-adjustment of the bandwidth of the multi-stage bandwidth regulation photodetector assembly.

[0058] Figure 3 The first printed circuit board of the multi-stage bandwidth regulation photodetector assembly provided by the embodiment of the application is schematically shown in a top view.

[0059] As Figure 3As shown, the multi-level bandwidth-controlled photodetector assembly provided in this embodiment differs from the above embodiments in that the surface of the first printed circuit board 1 of the multi-level bandwidth-controlled photodetector assembly is provided with a right-angled slot 12 corresponding to the size of the photodetector 4 and the thin-film circuit 5. The photodetector 4 and the thin-film circuit 5 are fixed to the surface of the first printed circuit board 1 through the right-angled slot 12. The photodetector 4 is fixed to the surface of the first printed circuit board 1 with silver paste; the thin-film circuit 5 is fixed to the surface of the first printed circuit board 1 with ultraviolet light-curing adhesive; the P electrode of the photodetector 4 is bonded to the signal line of the thin-film circuit 5 through gold wire, and the N electrode of the photodetector 4 is bonded to the ground line of the thin-film circuit 5 through gold wire.

[0060] Figure 4 The diagram schematically shows a top view of the second printed circuit board of the multi-level bandwidth-controlled photodetector assembly provided in an embodiment of the present invention.

[0061] like Figure 4 As shown, the multi-level bandwidth-controlled photodetector assembly provided in this embodiment of the invention differs from the above embodiment in that the first open-loop circuit 21 printed on the second printed circuit board 2 of the multi-level bandwidth-controlled photodetector assembly includes 1 to 50 resistors 22, and the resistance value of the resistors 22 is 1 to 10Ω.

[0062] In a preferred embodiment, the number of resistors 22 provided in this embodiment is 13, and the resistance value of each resistor 22 is 10Ω.

[0063] Figure 5 The diagram illustrates a top view of the third printed circuit board of the multi-level bandwidth-controlled photodetector assembly provided in an embodiment of the present invention.

[0064] like Figure 5 As shown, the multi-level bandwidth-controlled photodetector assembly provided in this embodiment of the invention differs from the above embodiment in that the second open-loop circuit 31 printed on the third printed circuit board 3 of the multi-level bandwidth-controlled photodetector assembly includes 1 to 50 capacitors 32, and the capacitance value of the capacitors 32 is 1 to 10 pF.

[0065] In a preferred embodiment, the number of capacitors 32 provided in this embodiment is 13, and the capacitance of each capacitor 32 is 10pF.

[0066] Figure 6 The schematic diagram illustrates the equivalent circuit diagram of the multi-level bandwidth-controlled photodetector assembly provided in an embodiment of the present invention.

[0067] like Figure 6As shown, the multi-stage bandwidth regulation photoelectric detector assembly provided by the embodiment of the application is characterized in that the photoelectric detector 4 is connected in series with a plurality of resistors 22 through a first open loop circuit 21, connected in series with a plurality of capacitors 32 through a second open loop circuit 31, and the resistors 22 obtained by the series connection of the plurality of resistors 22 are obtained by the selection of the soldering points on the first printed circuit board 1 on the second printed circuit board 2, and the capacitors 32 obtained by the series connection of the plurality of capacitors 32 are also obtained by the third printed circuit board 3; the resonance effect introduced by the series connection of the resistors 22 and the capacitors 32 improves the bandwidth of the photoelectric detector assembly, and realizes the autonomous regulation and control of the bandwidth of the multi-stage photoelectric detector assembly.

[0068] The multi-stage bandwidth regulation photoelectric detector assembly provided by the embodiment of the application introduces the resonance effect by adjusting the resistance of the resistors 22 and the capacitance of the capacitors 32 in the packaging structure to compensate for the fading of the photoelectric detector assembly at high frequencies, realizes the autonomous regulation and control of the bandwidth of the multi-stage photoelectric detector assembly, connects the photoelectric detector 4, the thin film circuit 5, the resistors 22 and the capacitors 32 through the combination of the through holes on the multi-stage printed circuit boards and the gold wire bonding, overcomes the instability and complexity of the traditional photoelectric detector assembly connected only by the gold wire bonding, reduces the resonance negative effect introduced by the overlong gold wire, and avoids the short circuit caused by different gold wire contacts.

[0069] Although the present application has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary only and not restrictive.

[0070] Those skilled in the art can understand that the features described in various embodiments and / or claims of the present application can be combined in various ranges and / or combined, even if such combinations or combinations are not explicitly described in the present application. In particular, the features described in various embodiments and / or claims of the present application can be combined in various combinations and / or combined without departing from the spirit and teachings of the present application. All such combinations and / or combinations fall within the scope of the present application.

[0071] Although the present application has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary only and not restrictive. Thus, the scope of the present application should not be limited to the above-described embodiments, but should be determined only by the appended claims, and should be defined by the equivalents of the appended claims.

Claims

1. A multi-bandwidth modulated photodetector assembly comprising: include: First printed circuit board; The second printed circuit board is electrically connected to the first printed circuit board; the second printed circuit board has a first open-loop circuit printed on it, the first open-loop circuit including at least one resistor, the at least one resistor being connected in series; The third printed circuit board is electrically connected to the second printed circuit board; the third printed circuit board has a second open-loop circuit printed on it, the second open-loop circuit includes at least one capacitor, and the at least one capacitor is connected in series. A photodetector is disposed on the surface of the first printed circuit board and electrically connected to the first open-loop circuit and the second open-loop circuit respectively, for converting the incident light signal into an electrical signal. A thin-film circuit is disposed on the surface of the first printed circuit board and electrically connected to the photodetector for transmitting the electrical signal; The surface of the first printed circuit board is provided with a first through hole for connecting the first printed circuit board and the second printed circuit board; the surface of the second printed circuit board is provided with a second through hole for connecting the second printed circuit board and the third printed circuit board; the inner walls of the first through hole and the second through hole are metallized; The first open-loop circuit is electrically connected to the first through-hole; the second open-loop circuit is electrically connected to the first through-hole through the second through-hole. The photodetector is electrically connected to the first open-loop circuit and the second open-loop circuit respectively through the first through hole; The thin-film circuit completes circuit closure by bonding with the gold wire of the first through-hole; Specifically, by closing the first open-loop circuit and the second open-loop circuit, the resistance value of the resistor and the capacitance value are adjusted until the thin-film circuit generates a resonant effect, thereby completing the bandwidth control of the photodetector assembly. After the multi-level bandwidth-controlled photodetector component circuit is connected, a suitable first via is selected, which corresponds to resistors and capacitors of different sizes, and bonded to the gold wire electrodes of the thin film circuit to introduce a resonance effect to compensate for the attenuation of the photodetector component at high frequencies.

2. The multi-bandwidth regulated photodetector assembly of claim 1, wherein, The first open-loop circuit includes 1 to 50 resistors, the resistance of which is 1 to 10Ω.

3. The multi-bandwidth regulated photodetector assembly of claim 1, wherein, The second open-loop circuit includes 1 to 50 capacitors, the capacitance of which is 1 to 10 pF.

4. The multi-bandwidth regulated photodetector assembly of claim 1, wherein, The materials of the first printed circuit board, the second printed circuit board, and the third printed circuit board are polyimide resin glass fiber or epoxy glass fiber.

5. The multi-bandwidth regulated photodetector assembly of claim 1, wherein, The photodetector is made of indium gallium arsenide or indium phosphide.

6. The multi-bandwidth regulated photodetector assembly of claim 1, wherein, The thin-film circuit is made of gold, and the substrate material of the thin-film circuit is aluminum nitride.

7. The multi-bandwidth photodetector assembly of claim 1, wherein, The photodetector is fixed to the surface of the first printed circuit board by silver paste; the thin film circuit is fixed to the surface of the first printed circuit board by UV-curable adhesive.

8. The multi-bandwidth photodetector assembly of claim 1, wherein, The P electrode of the photodetector is bonded to the signal line of the thin-film circuit via a gold wire, and the N electrode of the photodetector is bonded to the ground line of the thin-film circuit via a gold wire.

9. The multi-bandwidth photodetector assembly of claim 1, wherein, The surface of the first printed circuit board is provided with a right-angled groove corresponding to the size of the photodetector and the thin film circuit, and the photodetector and the thin film circuit are fixed to the surface of the first printed circuit board through the right-angled groove.

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