A silicon-based integrated light source based on a compound semiconductor laser

Abstract

This invention discloses a silicon-based integrated light source based on a compound semiconductor laser, comprising: a silicon-on-insulator (SOI) region, a deposited silicon region, a bonding region, and a laser region; the laser region is integrated above the SOI region and the deposited silicon region via the bonding region; the deposited silicon region is fabricated on the SOI region using low-temperature deposition of amorphous silicon, including a first deposited silicon tapered waveguide, a deposited silicon transition waveguide, and a second deposited silicon tapered waveguide; the laser region includes an active region, a grating layer, a laser transition waveguide, and a laser tapered waveguide; a high-reflection coating is deposited on the right side of the laser region along the light output direction, and an anti-reflection coating is deposited on the left side to construct a resonant cavity; the grating layer selects the mode of the optical signal to obtain the target optical signal, which is coupled to the second deposited silicon tapered waveguide via the laser tapered waveguide, and then coupled to the SOI tapered waveguide via the first deposited silicon tapered waveguide, outputting a high-power optical signal along the SOI silicon waveguide. This improves optical coupling efficiency and achieves a highly reliable, high-output-power, and low-cost silicon-based integrated light source.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, and more specifically, relates to a silicon-based integrated light source based on a compound semiconductor laser. Background Technology

[0002] Silicon is the foundation for fabricating silicon optical devices and is of great significance to the development of technologies such as social communication. However, silicon is an indirect bandgap material, making it difficult for it to emit light on its own. Lasers generally use direct bandgap III-V group materials. Initially, to couple the light emitted by a laser into a silicon waveguide, a hybrid integration approach was used, separating the laser chip and the electrical chip, with the laser and silicon connected via optical fiber. This method is relatively simple, but it has low integration density and a large footprint. Therefore, optoelectronic heterogeneous integration of lasers onto silicon waveguides is of significant research importance.

[0003] Numerous research achievements have been made in heterogeneous integration of lasers onto silicon waveguides. A common method is to directly align the laser with the silicon waveguide, with the laser beam horizontally coupled into the silicon waveguide on the SOI (Silicon-on-Instrument), which is the end-face coupling method. The difficulties of this method are: 1) Ensuring the alignment of the laser with the silicon waveguide generally requires etching the top silicon layer on the SOI first, and then soldering the laser chip to the substrate at the etched area. Under the premise of ensuring the alignment of the laser chip with the silicon waveguide, the light emitted by the laser chip can be coupled into the silicon waveguide with low insertion loss. However, when soldering the laser to the silicon substrate, it is difficult to ensure that the laser chip is at the same height as the silicon waveguide, which affects the coupling efficiency; 2) There is reflection at the interface between the laser and the silicon waveguide. If the reflected light of a certain intensity returns to the laser cavity, it may cause phenomena such as coherence collapse, which affect the stability of the laser output. Therefore, an isolator structure is generally introduced at the interface. However, the introduction of isolators not only increases the size of the integrated device, but also increases the device manufacturing cost.

[0004] Based on the problems of end-face coupling, some scholars have proposed a method of directly attaching the III-V group material gain medium to the silicon waveguide. In this method, the III-V group material provides gain for the reciprocating oscillating light, which oscillates in the resonant cavity composed of the III-V group material and silicon, forming a III-V-Si hybrid laser. The mode selection grating is generally etched on the silicon waveguide. Since the III-V group material and the silicon waveguide are not on the same horizontal plane, the light mainly oscillates in the two waveguides through evanescent wave coupling. Evanescent wave coupling can also have high coupling efficiency. The main problems faced by this method are: 1) In order to obtain high evanescent wave coupling efficiency, the thickness of the top silicon layer on SOI needs to be large, which is 220nm thicker than the conventional top silicon layer thickness, resulting in process incompatibility issues. Using custom-made thick silicon will increase costs; 2) Since the resonant cavity and the mode selection grating are both on silicon, the output power of the entire composite laser is low. Summary of the Invention

[0005] In view of the shortcomings of related technologies, the present invention aims to provide a silicon-based integrated light source based on a compound semiconductor laser, which aims to solve the problems of high manufacturing costs due to the need for customized thick silicon to meet coupling efficiency, and the low output power of the composite laser because the resonant cavity and mode selection grating are both on silicon.

[0006] To achieve the above objectives, the present invention provides a silicon-based integrated light source based on a compound semiconductor laser, comprising: a silicon-on-insulator (SOI) region (1), a deposited silicon region (2), a bonding region (3), and a laser region (4);

[0007] The silicon-on-insulator region (1) includes an SOI silicon waveguide (1-3) and an SOI tapered waveguide (1-4);

[0008] The deposited silicon region (2) is made of amorphous silicon deposited at low temperature on the silicon-on-insulator region (1), and includes a first deposited silicon tapered waveguide (2-1), a deposited silicon transition waveguide (2-2), and a second deposited silicon tapered waveguide (2-3);

[0009] The bonding region (3) and the deposited silicon region (2) are set to the same layer. The laser region (4) is integrated above the deposited silicon region (2) through the bonding region (3). The light-emitting end of the laser region (4) is in contact with the second deposited silicon tapered waveguide (2-3).

[0010] The laser region (4) includes an active region (4-2), a grating layer (4-3), a laser transition waveguide (4-7), and a laser tapered waveguide (4-8);

[0011] The active region (4-2) is used to generate optical signals; the laser region (4) is coated with a high-reflection film on the right side and an anti-reflection film on the left side along the light output direction to construct a resonant cavity and reflect the optical signal to generate a multimode optical signal; the grating layer (4-3) is used to select the mode of the multimode optical signal to obtain the target optical signal; the target optical signal is coupled to the second deposited silicon tapered waveguide (2-3) through the laser transition waveguide (4-7) and the laser tapered waveguide (4-8) in sequence, and then coupled to the SOI tapered waveguide (1-4) through the deposited silicon transition waveguide (2-2) and the first deposited silicon tapered waveguide (2-1), and outputs a high-power optical signal along the SOI silicon waveguide (1-3).

[0012] Optionally, the optical axis of the laser tapered waveguide (4-8) is at a preset angle to the transverse direction of the silicon-based integrated light source, in order to reduce the reflected light from the light-emitting end face of the laser region (4).

[0013] Optionally, the optical axis of the second deposited silicon tapered waveguide (2-3) is at the preset angle to the transverse direction of the silicon-based integrated light source, and the deposited silicon transition waveguide (2-2) is a curved waveguide used to transitionally connect the first deposited silicon tapered waveguide (2-1) and the second deposited silicon tapered waveguide (2-3).

[0014] Optionally, the laser region (4) includes a second electrode (4-6), a laser transition waveguide (4-7), and a laser tapered waveguide (4-8), and from bottom to top, an n-type / p-type lower cladding (4-1), an active region (4-2), a grating layer (4-3), a p-type / n-type upper cladding (4-4), and a first electrode (4-5);

[0015] The second electrode (4-6) is disposed on the n-type / p-type lower cladding (4-1), the laser transition waveguide (4-7) and the active region (4-2) are disposed on the same layer and located at the light-emitting end of the laser region (4), and the laser tapered waveguide (4-8) is connected to the laser transition waveguide (4-7);

[0016] The lower cladding (4-1) and the upper cladding (4-4) are used to inject the injected carriers from the lower electrode (4-6) and the upper electrode (4-5) into the active region (4-2), and simultaneously form a low-high-low refractive index waveguide structure with the active region (4-2) in the longitudinal direction. The upper cladding (4-4) is etched into a ridge waveguide structure, forming a low-high-low refractive index waveguide structure in the transverse direction. The active region (4-2) is a multi-quantum well structure, used for carrier recombination to generate gain emission. The grating layer (4-3) is etched with a phase-shifting grating for mode selection to achieve single-mode operation of the laser.

[0017] Optionally, the material of the bonding region (3) is silicon oxide, silicon nitride, polymer or other bonding materials.

[0018] Optionally, the silicon-on-insulator region (1) includes a substrate silicon (1-1), silicon oxide (1-2), an SOI silicon waveguide (1-3), an SOI tapered waveguide (1-4), and a cladding (1-5); the silicon oxide (1-2) is disposed on the substrate silicon (1-1), the SOI silicon waveguide (1-3), the SOI tapered waveguide (1-4), and the cladding (1-5) are disposed on the same layer and are all disposed on the silicon oxide (1-2), the SOI tapered waveguide (1-4) is connected to the SOI silicon waveguide (1-3), and is in contact with the first deposited silicon tapered waveguide (2-1).

[0019] Optionally, the laser transition waveguide (4-7) and the laser tapered waveguide (4-8) are made of passive compound bulk materials.

[0020] Optionally, a passive material is provided at the tail end of the laser region (4) in the light output direction, and a distributed Bragg grating (4-9) is etched on the passive material to select the single mode of the output light.

[0021] In summary, compared with the prior art, the above-described technical solutions conceived by this invention can achieve the following beneficial effects:

[0022] 1. This invention provides a silicon-based integrated light source based on a compound semiconductor laser. Utilizing a low-temperature deposition process for amorphous or polycrystalline silicon, it achieves high-quality coupling of the output light from the compound semiconductor laser to thick deposited silicon and then to thin SOI-on-silicon (SOI). Two sets of tapered waveguide structures are used to achieve an adiabatic evolution process of the light, improving optical coupling efficiency and realizing a highly reliable, high-output-power silicon-based integrated light source. Simultaneously, this device is compatible with conventional SOI top-layer silicon processes, reducing manufacturing costs.

[0023] 2. The present invention provides a silicon-based integrated light source based on a compound semiconductor laser. By making the output end face of the laser region into a slanted cavity for output, the optical axes of the two sets of tapered waveguides are in the same direction, thereby reducing the impact of end face reflection on the laser cavity, reducing losses, and increasing output power.

[0024] 3. The present invention provides a silicon-based integrated light source based on a compound semiconductor laser, which uses a passive compound bulk material and etches the passive compound bulk material into a preset structure to avoid etching the active region and improve the reliability of the device.

[0025] 4. The present invention provides a silicon-based integrated light source based on a compound semiconductor laser, wherein a grating is placed outside the active region, and a distributed Bragg grating is etched on the passive bulk material at the tail end of the light emission direction to form a silicon-based integrated light source based on a compound semiconductor DBR laser with good anti-reflection performance and single-mode characteristics. Attached Figure Description

[0026] Figure 1 This is a top view schematic diagram of a silicon-based integrated light source based on a compound semiconductor laser, provided in Embodiment 1 of the present invention.

[0027] Figure 2 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the xx... ’ Cross-sectional view in the direction;

[0028] Figure 3 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the yy path, as shown in Embodiment 1 of the present invention. ’ Cross-sectional view in the direction;

[0029] Figure 4This is a top view schematic diagram of a silicon-based integrated light source based on a compound semiconductor laser, provided in Embodiment 2 of the present invention;

[0030] Figure 5 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the xx axis, as shown in Embodiment 2 of the present invention. ’ Cross-sectional view in the direction;

[0031] Figure 6 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the yy path, as shown in Embodiment 2 of the present invention. ’ Cross-sectional view in the direction;

[0032] Figure 7 This is a top view schematic diagram of a silicon-based integrated light source based on a compound semiconductor laser provided in Embodiment 3 of the present invention;

[0033] Figure 8 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the xx path, as shown in Embodiment 3 of the present invention. ’ Cross-sectional view in the direction;

[0034] Figure 9 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the yy path, as shown in Embodiment 3 of the present invention. ’ Cross-sectional view in the direction;

[0035] Figure 10 This is a top view schematic diagram of a silicon-based integrated light source based on a compound semiconductor laser provided in Embodiment 4 of the present invention;

[0036] Figure 11 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the xx... ’ Cross-sectional view in the direction;

[0037] Figure 12 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the yy path, as shown in Embodiment 4 of the present invention. ’ Cross-sectional view in the direction;

[0038] Figure 13 This is a top view schematic diagram of a silicon-based integrated light source based on a compound semiconductor laser provided in Embodiment 5 of the present invention;

[0039] Figure 14 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the xx path, as shown in Embodiment 5 of the present invention. ’ Cross-sectional view in the direction;

[0040] Figure 15 This invention provides a silicon-based integrated light source based on a compound semiconductor laser, along the yy path, as shown in Embodiment 5 of the present invention.’ Cross-sectional view in the direction.

[0041] In all the accompanying drawings, the same reference numerals are used to denote the same elements or structures, wherein:

[0042] 1 is the SOI region, 2 is the deposited silicon region, 3 is the bonding region, 4 is the laser region, 1-1 is the substrate silicon, 1-2 is silicon oxide, 1-3 is the SOI silicon waveguide, 1-4 is the SOI tapered waveguide, 1-5 is the cladding, 2-1 is the first deposited silicon tapered waveguide, 2-2 is the deposited silicon transition waveguide, 2-3 is the second deposited silicon tapered waveguide, 3 is the bonding region, 4-1 is the n-type / p-type lower cladding, 4-2 is the active region, 4-3 is the grating layer, 4-4 is the p-type / n-type upper cladding, 4-5 is the first electrode, 4-6 is the second electrode, 4-7 is the laser transition waveguide, 4-8 is the laser tapered waveguide, and 4-9 is the distributed Bragg grating. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0044] The following description, in conjunction with a preferred embodiment, illustrates the content involved in the above embodiments.

[0045] Example 1

[0046] like Figures 1-3As shown, a silicon-based integrated light source based on a compound semiconductor laser includes a silicon-on-insulator (SOI) region 1, a deposited silicon region 2, a bonding region 3, and a laser region 4. The SOI region 1 includes a substrate silicon 1-1, silicon oxide 1-2, an SOI silicon waveguide 1-3, an SOI tapered waveguide 1-4, and a cladding 1-5. The deposited silicon region 2 includes a first deposited silicon tapered waveguide 2-1, a deposited silicon transition waveguide 2-2, and a second deposited silicon tapered waveguide 2-3. The laser region 4 includes a second electrode 4-6, a laser transition waveguide 4-7, a laser tapered waveguide 4-8, and, from bottom to top, an n-type / p-type lower cladding 4-1, an active region 4-2, a grating layer 4-3, a p-type / n-type upper cladding 4-4, and a first electrode 4-5p, wherein the first electrode is a p-plane / n-plane electrode, and the second electrode is an n-plane / p-plane electrode. The second electrode 4-6 is disposed on the n-type / p-type lower cladding 4-1. The laser transition waveguide 4-7 and the active region 4-2 are disposed on the same layer and located at the light-emitting end of the laser region 4. The laser tapered waveguide 4-8 is connected to the laser transition waveguide 4-7.

[0047] Silicon oxide 1-2 is disposed on substrate silicon 1-1. SOI silicon waveguide 1-3, SOI tapered waveguide 1-4, and cladding 1-5 are disposed on the same layer and all disposed on silicon oxide 1-2. SOI tapered waveguide 1-4 is connected to SOI silicon waveguide 1-3 and is in contact with the first deposited silicon tapered waveguide 2-1. SOI silicon waveguide 1-3 and SOI tapered waveguide 1-4 are etched in the top layer of SOI silicon. The remaining part after the top layer of SOI silicon is cladding 1-5. The thickness of cladding 1-5 is the same as that of SOI silicon waveguide 1-3 and SOI tapered waveguide 1-4. Its material is silicon oxide or a low refractive index material such as polymer.

[0048] The areas above SOI region 1 and deposited silicon region 2 that do not contain devices are filled with silicon oxide, air, or other low-refractive-index materials. The devices are based on a low-temperature deposited amorphous silicon process, enabling low insertion loss optical coupling from laser region 4 to SOI region 1, achieving a silicon-based integrated high-output-power light source. Deposited silicon region 2 is fabricated by low-temperature deposition of amorphous silicon on top of SOI region 1. A first deposited silicon tapered waveguide 2-1, a deposited silicon transition waveguide 2-2, and a second deposited silicon tapered waveguide 2-3 are etched onto deposited silicon region 2. The deposited silicon transition waveguide 2-2 has a straight waveguide shape and is used to connect the first deposited silicon tapered waveguide 2-1 and the second deposited silicon tapered waveguide 2-3. The optical axis of the second deposited silicon tapered waveguide 2-3 is perpendicular to the transverse direction (xx). ’ (Direction) Parallel. Based on the low-temperature deposition of amorphous silicon process, on the basis of the top silicon thickness (220nm) on conventional SOI, amorphous silicon with a greater thickness (300-500nm) can be selectively deposited, achieving high evanescent wave coupling efficiency from laser to thick silicon.

[0049] Laser region 4 contains the laser itself, which is bonded to the silicon via the bonding region. The laser's emission direction (yy...) ’ At the tail end (direction), laser transition waveguide 4-7 and laser tapered waveguide 4-8 are etched in laser region 4; a high-reflection film is deposited on the right side of laser region 4 along the light output direction, and an anti-reflection film is deposited on the left side to construct a resonant cavity and generate multimode optical signals. Laser transition waveguide 4-7 is a straight waveguide shape, and the optical axis of laser tapered waveguide 4-8 is perpendicular to the xx direction. ’ The direction is parallel; the grating layer 4-3 is etched with a phase-shifting grating for mode selection to achieve single-mode operation of the laser. The target light signal is obtained after mode selection by the grating layer 4-3. The target light signal output from the laser region 4 is gradually coupled to the second deposited silicon tapered waveguide 2-3 in the deposited silicon region 2 via the laser transition waveguide 4-7 and the laser tapered waveguide 4-8. The optical axis directions of the two tapered waveguides are parallel to xx. ’ With the same direction, the light loss during the coupling process is reduced. The light coupled to the deposited silicon waveguide region 2 is gradually coupled to the SOI tapered waveguide 1-4 in the SOI region 1 via the deposited silicon transition waveguide 2-2 and the first deposited silicon tapered waveguide 2-1, and then outputs a high-power optical signal along the SOI silicon waveguide 1-3.

[0050] The bonding region 3 and the deposited silicon region 2 are set on the same layer. The laser region 4 is integrated above the deposited silicon region 2 through the bonding region 3. The light-emitting end of the laser region 4 is in contact with the second deposited silicon tapered waveguide 2-3. The material of the bonding region is silicon oxide, silicon nitride, polymer or other bonding materials.

[0051] In this embodiment of the invention, tapered waveguides are etched at the optical coupling waveguides from the laser to thick silicon and from thick silicon to thin silicon, respectively. Utilizing two sets of tapered waveguide structures, an adiabatic evolution process is achieved, improving optical coupling efficiency. This means light slowly transitions from one waveguide to another to achieve higher coupling efficiency. The silicon deposition region employs a low-temperature amorphous silicon deposition process to achieve high-quality coupling of the compound semiconductor laser's output light to the thick deposited silicon and then to the thin SOI-on-silicon layer. This achieves low insertion loss optical coupling from the laser region to the SOI region, realizing a silicon-based integrated high-output-power light source. This device is compatible with conventional SOI top-layer silicon processes, reducing manufacturing costs. It solves the problems of requiring customized thick silicon layers to meet coupling efficiency, resulting in high manufacturing costs, and the low output power of composite lasers due to the resonant cavity and mode selection grating being located on silicon. Achieving a highly reliable, high-output-power, and low-cost silicon-based integrated light source has significant application implications. The technical solution of this embodiment is both compatible with conventional silicon processes and provides a high-output-power silicon-based integrated light source.

[0052] Example 2

[0053] Based on the above embodiments, such as Figures 4-6As shown, the present invention provides a silicon-based integrated light source based on a compound semiconductor laser, including an SOI region 1, a deposited silicon region 2, a bonding region 3, and a laser region 4. The SOI region 1 includes a substrate silicon 1-1, silicon oxide 1-2, an SOI-on-silicon waveguide 1-3, an SOI-on-tapered waveguide 1-4, and a cladding layer 1-5. The deposited silicon region 2 includes a first deposited silicon tapered waveguide 2-1, a deposited silicon transition waveguide 2-2, and a second deposited silicon tapered waveguide 2-3. The laser region 4 includes an n-face / p-face electrode 4-6, a laser transition waveguide 4-7, and a laser tapered waveguide 4-8, as well as an n-type / p-type lower cladding layer 4-1, an active region 4-2, a grating layer 4-3, a p-type / n-type upper cladding layer 4-4, and a p-face / n-face electrode 4-5 arranged from bottom to top.

[0054] In laser region 4, n-face / p-face electrodes 4-6 are disposed on n-type / p-type lower cladding 4-1. Laser transition waveguide 4-7 and active region 4-2 are disposed on the same layer, located at the light-emitting end of laser region 4. Laser tapered waveguide 4-8 is connected to laser transition waveguide 4-7. Lower cladding 4-1 and upper cladding 4-4 ​​are used to inject the injected carriers from lower electrode 4-6 and upper electrode 4-5 into active region 4-2, and simultaneously form a low-high-low refractive index waveguide structure with active region 4-2 in the longitudinal direction (material growth direction). Upper cladding 4-4 ​​is etched into a ridge waveguide structure in the transverse direction (xx ’ The direction forms a low-high-low refractive index waveguide structure; the active region 4-2 is a multi-quantum well structure, used for carrier recombination to generate gain luminescence; the grating layer 4-3 is etched with a phase-shifting grating for mode selection to realize single-mode operation of the laser.

[0055] In the direction of laser light output (yy ’ At the tail end (direction), laser transition waveguide 4-7 and laser tapered waveguide 4-8 are etched in laser region 4; a high-reflection film is deposited on the right side of laser region 4 along the light output direction, and an anti-reflection film is deposited on the left side to construct the resonant cavity. Laser tapered waveguide 4-8 and xx ’ The direction is at a preset angle, which can reduce the impact of reflection from the laser region 4's output end face on the laser region 4. The optical axis of the second deposited silicon tapered waveguide 2-3 is aligned with the xx of the silicon-based integrated light source. ’ The orientation is also at a preset angle, and the two preset angles mentioned above are equal. The optical axis of the second deposited silicon tapered waveguide 2-3 is in the same direction as the optical axis of the laser tapered waveguide 4-8, and the preset angle is preferably 7 degrees. The deposited silicon transition waveguide 2-2 is a curved waveguide, used to transition between the first deposited silicon tapered waveguide 2-1 and the second deposited silicon tapered waveguide 2-3.

[0056] In this embodiment, the output light from laser region 4 is gradually coupled to the second deposited silicon tapered waveguide 2-3 in deposited silicon region 2 via laser transition waveguide 4-7 and laser tapered waveguide 4-8. The two tapered waveguides are connected to xx ’The directional angles are the same, which reduces the loss of light during the coupling process. The light coupled to the deposited silicon waveguide region 2 is gradually coupled to the SOI tapered waveguide 1-4 in the SOI region 1 via the deposited silicon transition waveguide 2-2 and the first deposited silicon tapered waveguide 2-1, and then output along the SOI silicon waveguide 1-3.

[0057] In this embodiment, both the laser tapered waveguide and the second deposited silicon tapered waveguide are configured to be similar to xx. ’ The optical axis is at a predetermined angle, with its direction of optical oscillation within the laser cavity at a certain angle. The deposited silicon transition waveguide 2-2 is a curved waveguide, and the output end face of the laser region is made into an oblique cavity for emission, so that the target light signal is emitted obliquely from the laser region, thereby reducing the impact of reflection from the output end face of the laser region on the laser region, and the power of the reflected light returning to the laser cavity is relatively small. This scheme is compatible with conventional silicon processes and provides a high-output optical power silicon-based integrated light source solution.

[0058] Example 3

[0059] Based on the above embodiments, such as Figures 7-9 As shown, the structure includes SOI region 1, silicon deposition region 2, bonding region 3, laser region 4, n-type / p-type lower cladding 4-1, active region 4-2, grating layer 4-3, p-type / n-type upper cladding 4-4, p-face / n-face electrode 4-5, and n-face / p-face electrode 4-6, which are consistent with the above-mentioned embodiment 2.

[0060] In the laser transition waveguide 4-7 and laser tapered waveguide 4-8, a passive compound bulk material is used. Specifically, the active region is etched at predetermined positions in the laser transition waveguide 4-7 and laser tapered waveguide 4-8, and the passive compound bulk material is regrown. Then, the bulk material is etched into the structure of laser transition waveguide 4-7 and laser tapered waveguide 4-8. The shapes of laser transition waveguide 4-7 and laser tapered waveguide 4-8, and their relationship with xx... ’ The directional angle is the same as in Example 2.

[0061] The technical solution of this embodiment uses passive compound bulk material at preset positions of the laser transition waveguide and laser tapered waveguide in the laser region, and etches the passive compound bulk material into a preset structure to avoid etching the active region and improve the reliability of the device.

[0062] Example 4

[0063] Based on the above embodiments, such as Figures 10-12 As shown, it includes SOI region 1, silicon deposition region 2, and bonding region 3. In laser region 4, n-type / p-type lower cladding 4-1, active region 4-2, p-type / n-type upper cladding 4-4, p-face / n-face electrode 4-5, and n-face / p-face electrode 4-6 are all consistent with those in Embodiment 1 of the present invention.

[0064] In this embodiment, the grating is not etched above the active region 4-2, meaning that mode selection of the output light from laser region 4 is not performed above the active region 4-2. A passive material is grown at the tail end of the laser region 4 in the light-emitting direction, and a distributed Bragg grating 4-9 is etched on the passive material to select the single mode of the output light. The active region 4-2 is only responsible for providing gain. This type of laser is called a distributed Bragg reflector (DBR) laser. This type of laser also has good anti-reflection performance and single-mode characteristics. At the same time, by adjusting the current injected into the distributed Bragg grating 4-9, the wavelength of the output light can be changed by changing the refractive index of the material.

[0065] In this embodiment, a distributed Bragg grating is etched on the passive material at the tail end of the laser region 4 in the light-emitting direction, which can realize a silicon-based integrated light source based on a compound semiconductor DBR laser.

[0066] Example 5

[0067] Based on the above embodiments, such as Figures 13-15 As shown, the SOI region 1, deposited silicon region 2, bonding region 3, and laser region 4 are consistent with those in Embodiment 1 of the present invention. In SOI region 1, the substrate silicon 1-1, silicon oxide 1-2, and SOI-on-silicon waveguide 1-3 are the same as in Embodiment 3 of the present invention. The shape of the SOI silicon tapered waveguide 1-4 is opposite to that in Embodiment 1 of the present invention, and it narrows from wide to narrow in the light transmission direction, which is consistent with the trend of the first deposited silicon tapered waveguide 2-1. This structure can also realize the adiabatic evolution of light from the first deposited silicon tapered waveguide 2-1 to the SOI-on-silicon tapered waveguide 1-4, thus achieving high evanescent wave coupled optical power.

[0068] Furthermore, below bonding region 3 is the top layer silicon on SOI, not the refractive index material such as silicon oxide or polymer as in Example 1.

[0069] In this embodiment, two sets of tapered waveguide structures are used to realize the adiabatic evolution process of light and improve optical coupling efficiency.

[0070] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A silicon-based integrated light source based on a compound semiconductor laser, characterized in that, include: The silicon-on-insulator (SOI) region (1), the deposited silicon region (2), the bonding region (3), and the laser region (4) are all part of the structure. The silicon-on-insulator region (1) includes an SOI silicon waveguide (1-3) and an SOI tapered waveguide (1-4); The deposited silicon region (2) is made of amorphous silicon deposited at low temperature on the silicon-on-insulator region (1), and includes a first deposited silicon tapered waveguide (2-1), a deposited silicon transition waveguide (2-2), and a second deposited silicon tapered waveguide (2-3); The bonding region (3) and the deposited silicon region (2) are set to the same layer. The laser region (4) is integrated above the deposited silicon region (2) through the bonding region (3). The light-emitting end of the laser region (4) is in contact with the second deposited silicon tapered waveguide (2-3). The laser region (4) includes an active region (4-2), a grating layer (4-3), a laser transition waveguide (4-7), and a laser tapered waveguide (4-8); The active region (4-2) is used to generate optical signals; the laser region (4) is coated with a high-reflection film on the right side and an anti-reflection film on the left side along the light output direction to construct a resonant cavity and reflect the optical signal to generate a multimode optical signal; the grating layer (4-3) is used to select the mode of the multimode optical signal to obtain the target optical signal; the target optical signal is coupled to the second deposited silicon tapered waveguide (2-3) through the laser transition waveguide (4-7) and the laser tapered waveguide (4-8) in sequence, and then coupled to the SOI tapered waveguide (1-4) through the deposited silicon transition waveguide (2-2) and the first deposited silicon tapered waveguide (2-1), and outputs a high-power optical signal along the SOI silicon waveguide (1-3).

2. The silicon-based integrated light source as described in claim 1, characterized in that, The optical axis of the laser tapered waveguide (4-8) is at a preset angle to the transverse direction of the silicon-based integrated light source, which is used to reduce the reflected light from the light-emitting end face of the laser region (4).

3. The silicon-based integrated light source as described in claim 2, characterized in that, The optical axis of the second deposited silicon tapered waveguide (2-3) is at the preset angle to the transverse direction of the silicon-based integrated light source. The deposited silicon transition waveguide (2-2) is a curved waveguide used to transitionally connect the first deposited silicon tapered waveguide (2-1) and the second deposited silicon tapered waveguide (2-3).

4. The silicon-based integrated light source as described in claim 1, characterized in that, The laser region (4) includes a second electrode (4-6), a laser transition waveguide (4-7), and a laser tapered waveguide (4-8), and from bottom to top, an n-type / p-type lower cladding (4-1), an active region (4-2), a grating layer (4-3), a p-type / n-type upper cladding (4-4), and a first electrode (4-5); The second electrode (4-6) is disposed on the n-type / p-type lower cladding (4-1), the laser transition waveguide (4-7) and the active region (4-2) are disposed on the same layer and located at the light-emitting end of the laser region (4), and the laser tapered waveguide (4-8) is connected to the laser transition waveguide (4-7); The lower cladding (4-1) and the upper cladding (4-4) are used to inject the injected carriers from the second electrode (4-6) and the first electrode (4-5) into the active region (4-2), and simultaneously form a low-high-low refractive index waveguide structure with the active region (4-2) in the longitudinal direction. The upper cladding (4-4) is etched into a ridge waveguide structure, forming a low-high-low refractive index waveguide structure in the transverse direction. The active region (4-2) is a multi-quantum well structure, used for carrier recombination to generate gain emission. The grating layer (4-3) is etched with a phase-shifting grating for mode selection to achieve single-mode operation of the laser.

5. The silicon-based integrated light source as described in claim 1, characterized in that, The material of the bonding region (3) is silicon oxide, silicon nitride, polymer or other bonding materials.

6. The silicon-based integrated light source as described in claim 1, characterized in that, The silicon-on-insulator region (1) includes a substrate silicon (1-1), silicon oxide (1-2), an SOI silicon waveguide (1-3), an SOI tapered waveguide (1-4), and a cladding (1-5). The silicon oxide (1-2) is disposed on the substrate silicon (1-1). The SOI silicon waveguide (1-3), the SOI tapered waveguide (1-4), and the cladding (1-5) are disposed on the same layer and are all disposed on the silicon oxide (1-2). The SOI tapered waveguide (1-4) is connected to the SOI silicon waveguide (1-3) and is in contact with the first deposited silicon tapered waveguide (2-1).

7. The silicon-based integrated light source as described in claim 1, characterized in that, The laser transition waveguide (4-7) and the laser tapered waveguide (4-8) are made of passive compound bulk material.

8. The silicon-based integrated light source as described in claim 1, characterized in that, A passive material is provided at the tail end of the laser region (4) in the light output direction, and a distributed Bragg grating (4-9) is etched on the passive material to select the single mode of the output light.

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