Chemical vapor deposition apparatus and method thereof

Abstract

The application discloses a chemical vapor deposition device and a method thereof. The device comprises a reaction chamber with an inlet opening and an outlet opening, and a tray is arranged in the reaction chamber for carrying a substrate; an outer shell is arranged outside the reaction chamber, and a containing space is formed between the inner wall of the outer shell and the outer wall of the reaction chamber; a plurality of radiant heat sources are arranged in the containing space for heating the substrate through the outer wall of the reaction chamber; and a gas pressure adjusting device is used for independently regulating the gas pressure in the containing space and the reaction chamber. The device has the advantages that the gas pressure in the containing space is less than the atmospheric pressure, which helps to reduce the pressure bearing pressure of the cavity wall of the reaction chamber, and meanwhile, the heat transfer efficiency of the radiant heat sources is not affected, the heating uniformity of the reaction area in the reaction chamber is improved, the uniformity of the substrate film deposition is ensured, and the yield of the substrate process production is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor equipment, in particular to a chemical vapor deposition device and a method thereof. BACKGROUND

[0002] At present, plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD) and other process methods are commonly used for micro-processing of semiconductor process parts or substrates, such as manufacturing flexible display screens, flat panel displays, light-emitting diodes, solar cells, etc. Micro-processing manufacturing includes a variety of different processes and steps, among which the widely used is the chemical vapor deposition process, which can deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials. This process is generally carried out in a high-vacuum reaction chamber.

[0003] With the increasing miniaturization of semiconductor device features and the increasing integration of devices, higher and higher requirements are placed on the uniformity of the thin films of chemical vapor deposition. Although the chemical vapor deposition device has been updated several times and its performance has been greatly improved, there are still many deficiencies in the uniformity of thin film deposition, especially as the size of the substrate increases, the existing vapor deposition method and equipment have been difficult to meet the uniformity requirements of the thin film.

[0004] During the thin film deposition process, various process conditions can affect the uniformity of the thin film deposition on the substrate surface, such as the direction and distribution of the reaction gas flow, the heating temperature field of the substrate, the pressure distribution in the reaction chamber, etc. If the process environment in the reaction region of the reaction chamber is not completely uniform, the thin film deposited on the substrate surface will have thickness non-uniformity, component non-uniformity, physical property non-uniformity, etc., thereby reducing the yield of substrate production. Therefore, it is necessary to improve the existing chemical vapor deposition device to improve the uniformity of the substrate thin film deposition. In addition, for the epitaxial growth process of silicon or silicon germanium material, since these epitaxial materials are usually the bottom layer of semiconductor devices, the critical dimension (CD) is extremely small, usually only a few nanometers, and cannot withstand long time high temperature, otherwise it will cause damage to the semiconductor device, so the substrate needs to be heated to a temperature sufficient for silicon material epitaxial growth, such as 600-700 degrees, in a very short time. Due to this stringent heating requirement, the silicon epitaxial process usually uses high-power heating lamps to heat the substrate located in the reaction cavity through a transparent quartz reaction cavity. Since the gas pressure in the reaction cavity is much lower than the atmospheric pressure outside the quartz reaction cavity, in order to maintain the structure of the reaction cavity without deformation or fragmentation due to the large pressure difference between the inside and outside of the cavity, a pressure-resistant structure needs to be designed on the cavity. For example, a plurality of reinforcing ribs are arranged around the reaction cavity with flat plate type upper and lower quartz cavity walls, or the upper and lower quartz cavity walls are designed in a dome shape to resist atmospheric pressure. These outer walls made of quartz usually have a cavity wall thickness of 6-8 mm to resist atmospheric pressure while allowing more radiant energy to penetrate into the interior of the reaction cavity. These two structures have their own advantages and disadvantages. The flat plate type cavity can ensure stable distribution of the gas flow when flowing through the entire cavity, but a large number of reinforcing ribs (more than 10) on the top will block the heating radiation, resulting in uneven temperature distribution; for the dome-shaped reaction cavity, the temperature distribution is more uniform, but the gas flow will generate a large amount of turbulent flow when flowing into the dome-shaped reaction region, making it difficult to control the gas flow distribution. SUMMARY

[0005] The purpose of the present application is to provide a chemical vapor deposition device and method, which combines a reaction chamber, an outer shell, and a gas pressure adjusting device. During the process, the gas pressure adjusting device makes the gas pressure in the space between the reaction chamber and the outer shell less than atmospheric pressure, reducing the pressure difference between the inside and outside of the reaction chamber, relieving the pressure resistance of the reaction chamber, so that there is no need to set too many pressure-bearing strips on the cavity wall of the reaction chamber, ensuring the uniformity of the radiant heat source heat transfer and the uniformity of the heating of the reaction region in the reaction chamber, which helps the uniformity of the substrate thin film deposition and improves the yield of the substrate process production.

[0006] In order to achieve the above purpose, the present application realizes the following technical solutions:

[0007] A chemical vapor deposition device, comprising:

[0008] a reaction chamber having an inlet opening and an outlet opening, and a tray arranged in the reaction chamber for carrying a substrate;

[0009] an outer shell arranged outside the reaction chamber, and a space formed between the inner wall of the outer shell and the outer wall of the reaction chamber;

[0010] a plurality of radiant heat sources arranged in the space for heating the substrate through the outer wall of the reaction chamber;

[0011] a gas pressure adjusting device for independently adjusting the gas pressure in the reaction chamber and the space.

[0012] Optionally, the application further comprises:

[0013] a gas driving device for enhancing the gas flow in the space.

[0014] Optionally, the gas driving device is arranged in the space to drive the gas to flow around the outer wall of the reaction chamber and the inner wall of the outer shell, and the outer shell is further provided with a first heat exchange device.

[0015] Optionally, the reaction chamber comprises an inlet area corresponding to the inlet opening, an outlet area corresponding to the outlet opening, and a reaction area between the inlet area and the outlet area.

[0016] The outer wall of the reaction chamber is further provided with a plurality of reinforcing ribs, and the reinforcing rib density of the outer wall in the reaction area is less than that of the outer wall in the inlet area or the outlet area.

[0017] Optionally, the reinforcing ribs and the reaction chamber are made of quartz.

[0018] Optionally, the bottom of the reaction chamber comprises an extension pipe extending downward, and a rotating shaft is arranged in the extension pipe, the top of the rotating shaft is used to support and drive the tray, so that the substrate rotates in the reaction chamber.

[0019] Optionally, the reaction chamber comprises a dome-shaped top wall, the height from the edge of the substrate to the top wall is H1, the height from the center of the substrate to the top wall is H2, and H2<1.05*H1.

[0020] Optionally, the reaction chamber comprises a first flange and a second flange at both ends, and the first flange and the second flange are tightly combined with a first fastener and a second fastener on the outer shell, respectively.

[0021] Optionally, the outer shell disposed outside the reaction chamber comprises a top plate, a bottom plate and a side wall, and the top plate, the bottom plate and the side wall together with the outer wall of the reaction chamber, the first fastener and the second fastener form a containing space.

[0022] Optionally, the outer shell is made of aluminum, and the first fastener and the second fastener are made of stainless steel.

[0023] Optionally, the outer shell, the first fastener and the second fastener are provided with cooling liquid pipes.

[0024] Optionally, further comprising:

[0025] a temperature control loop in communication with the containing space to form a closed loop, the closed loop containing the gas driving device and a second heat exchange device, the gas driving device driving the gas to flow in the closed loop, and the second heat exchange device being used to cool the gas in the closed loop.

[0026] Optionally, the gas in the temperature control loop flows into the containing space from the top and / or the bottom of the containing space, and the gas in the containing space flows out of the containing space from both sides of the containing space.

[0027] Optionally, the gas is air, helium, nitrogen or a mixture of nitrogen and helium.

[0028] Optionally, further comprising:

[0029] a temperature control sub-loop in communication with the temperature control loop, the temperature control sub-loop containing a first container with an internal gas pressure higher than that of the containing space and a second container with an internal gas pressure lower than that of the containing space.

[0030] Optionally, a method for deposition using the chemical vapor deposition device, comprising the following steps:

[0031] transferring a substrate into a tray in the reaction chamber;

[0032] adjusting the gas pressure in the containing space by using a gas pressure adjusting device, so that the gas pressure in the containing space is less than atmospheric pressure;

[0033] performing a chemical vapor deposition process in the reaction chamber;

[0034] driving the gas in the containing space to flow by using a gas driving device.

[0035] Optionally, the gas pressure in the containing space is adjusted to 0.1-0.6 atm by using the gas pressure adjusting device.

[0036] Optionally, a processing device for epitaxial growth, comprising:

[0037] A reaction chamber with gas inlet and outlet openings at two ends, a tray is arranged in the reaction chamber for carrying a substrate, the gas inlet and outlet openings are used to form a reaction gas flow parallel to the tray; the reaction chamber comprises a gas inlet area corresponding to the gas inlet opening, a gas outlet area corresponding to the gas outlet opening, and a reaction area between the gas inlet area and the gas outlet area;

[0038] An outer shell is arranged outside the reaction chamber, a containing space is formed between the inner wall of the outer shell and the outer wall of the reaction chamber, the containing space is connected to a first gas pressure adjusting device; a plurality of radiant heat sources are arranged in the containing space, each of the radiant heat sources is arranged outside the reaction chamber to heat the substrate.

[0039] Optionally, the reaction chamber further comprises a plurality of reinforcing ribs arranged on the outer wall thereof, and the density of the reinforcing ribs arranged on the outer wall of the reaction area is less than that of the reinforcing ribs arranged on the outer wall of the gas inlet area or the gas outlet area.

[0040] Optionally, the bottom of the reaction chamber comprises an extension pipe extending downward, a rotating shaft is arranged in the extension pipe, and the top of the rotating shaft is used to support and drive the tray so that the tray rotates in the reaction chamber.

[0041] Optionally, further comprising:

[0042] A temperature control loop in communication with the containing space to form a closed loop, the closed loop comprises a gas driving device and a heat exchange device, the gas driving device drives the gas to flow in the closed loop, and the heat exchange device is used to cool the gas.

[0043] Optionally, further comprising:

[0044] A second gas pressure adjusting device in communication with the reaction chamber, the first gas pressure adjusting device and the second gas pressure adjusting device are independently controlled, so that the gas pressure in the containing space is lower than the atmospheric pressure and higher than the gas pressure in the reaction chamber when epitaxial growth is performed.

[0045] Optionally, further comprising:

[0046] A gas driving device for driving the gas in the containing space to flow.

[0047] Compared with the prior art, the present application has the following advantages:

[0048] The chemical vapor deposition device and method of the present application combine a reaction chamber, an outer shell, a radiant heat source and a gas pressure adjusting device. During the process, the gas pressure adjusting device makes the gas pressure in the space between the reaction chamber and the outer shell lower than the atmospheric pressure. The device ensures the uniformity of the heating of the reaction area in the reaction chamber, and reduces the pressure bearing pressure of the cavity wall of the reaction chamber, which helps to improve the heating efficiency of the radiant heat source and the uniformity of the gas flow in the reaction chamber, and ensures the effect of the deposition of the film of the substrate.

[0049] Further, the device also comprises a temperature control loop, which forms a closed loop with the space. The second gas driving device and the second heat exchange device realize the flow and heat exchange of the cooling gas in the closed loop, which improves the cooling efficiency of the reaction chamber.

[0050] Further, the device also comprises a temperature control loop, which forms a closed loop with the space. The second gas driving device and the second heat exchange device realize the flow and heat exchange of the cooling gas in the closed loop, which improves the cooling efficiency of the reaction chamber. BRIEF DESCRIPTION OF DRAWINGS

[0051] Figure 1 It is a brief schematic diagram of the chemical vapor deposition device of the present application.

[0052] Figure 2 It is a gas flow schematic diagram of the chemical vapor deposition device of the present application.

[0053] Figure 3a It is a schematic diagram of a chemical vapor deposition device of the first embodiment of the present application.

[0054] Figure 3b It is a schematic diagram of a chemical vapor deposition device of another embodiment of the present application.

[0055] Figure 4 It is a schematic diagram of the reaction chamber structure of the first embodiment of the present application.

[0056] Figure 5 It is a schematic diagram of another chemical vapor deposition device of the first embodiment of the present application.

[0057] Figure 6 It is a gas flow schematic diagram of another chemical vapor deposition device of the first embodiment of the present application.

[0058] Figure 7 It is a schematic diagram of another chemical vapor deposition device of the first embodiment of the present application.

[0059] Figure 8 It is a schematic diagram of a chemical vapor deposition device of the second embodiment of the present application. Detailed Implementation

[0060] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0061] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0062] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of one embodiment of the present invention.

[0063] like Figure 1 and Figure 2 The diagram illustrates a chemical vapor deposition (CVD) apparatus according to the present invention. The apparatus includes a reaction chamber 110, the interior of which forms a processing space. A tray 120 is disposed within the processing space, and the tray 120 is used to hold one or more substrates W for a chemical vapor deposition process, which includes depositing material onto the upper surface of the substrate W. The reaction chamber 110 has an upper chamber wall 111 at the top, a lower chamber wall 112 at the bottom, and side chamber walls 113 extending on both sides between the upper and lower chamber walls 111 and 112. Optionally, the upper and lower chamber walls 111 and 112 are made of optically transparent or translucent materials that can transmit thermal radiation (such as quartz materials transparent to specific infrared bands). Figure 4 The reaction chamber 110 has an air intake area corresponding to the air intake opening at one end and an exhaust area corresponding to the exhaust opening at the other end, as well as a reaction area located between the air intake area and the exhaust area. The substrate W is located in the reaction area. The reaction gas used for deposition flows into the reaction chamber 110 from the air intake opening, performs a chemical vapor deposition process in the reaction area, and flows out of the reaction chamber 110 from the exhaust opening.

[0064] Further, the apparatus also includes a plurality of radiant heat sources 130 for providing thermal energy to the reaction chamber 110 and the substrate W. Each of the radiant heat sources 130 is disposed on the outside of the reaction chamber 110 to heat the reaction chamber 110 and the substrate W therein. Optionally, the radiant heat sources 130 are high intensity tungsten filament lamps having transparent quartz envelopes and containing halogen gas, such as iodine. The radiant heat sources 130 generate radiant thermal energy that is only partially absorbed by the upper chamber wall 111 or the lower chamber wall 112 to ensure that the thermal energy generated by each of the radiant heat sources 130 is maximized to the substrate W and the tray 120 within the reaction chamber 110. During processing, the reaction chamber 110 and the substrate W are heated by each of the radiant heat sources 130 to a desired process temperature to cause the reactant gas within the reaction chamber 110 to thermally decompose and deposit a thin film material on the upper surface of the substrate W. Optionally, the thin film material deposited is a semiconductor material, such as silicon and germanium, and can also include other doped materials, such as Group III, Group IV and / or Group V materials.

[0065] Most chemical vapor deposition processes are typically performed at high temperatures and under high vacuum conditions. The reaction chamber 110 is typically heated to a relatively high temperature and the pressure within the reaction chamber 110 is much lower than atmospheric pressure. The pressure differential between the inside and outside of the reaction chamber 110 is relatively large and the chamber walls are subjected to a relatively large pressure. If the pressure containment capability of the reaction chamber 110 is increased by increasing the thickness of the chamber walls of the reaction chamber 110, the thick chamber walls of the reaction chamber 110 will absorb too much of the radiant heat and reduce the efficiency of the radiant heat sources 130 in transferring thermal energy to the substrate within the reaction chamber 110. This will increase the power required to heat the substrate to the process temperature. On the other hand, if the mechanical strength of the reaction chamber 110 is increased by adding a plurality of pressure containment strips on the outside of the reaction chamber 110 to increase the pressure containment capability of the reaction chamber 110, the pressure containment strips will block the thermal energy transferred by the radiant heat sources 130 to the reaction chamber 110. This will result in a non-uniform distribution of heat to the substrate W within the reaction chamber 110 and will affect the uniformity of the thin film deposition on the substrate W.

[0066] Based on the above problems, the chemical vapor deposition device further comprises an outer shell 140. Specifically, the outer shell 140 is arranged outside the reaction chamber 110, and a containing space 150 is formed between the inner wall of the outer shell 140 and the outer wall of the reaction chamber 110. The containing space 150 is connected with a gas pressure adjusting device for independently adjusting the gas pressure in the containing space 150 and the reaction chamber 110. The gas pressure adjusting device can be a vacuum pump, which is connected with the reaction chamber 110 and the containing space 150 through two pipelines, and at least one of the pipelines is provided with an adjustable resistance device to achieve the mutual non-interference of the gas pressures in the reaction chamber 110 and the containing space 150. In other embodiments, the gas pressure adjusting device can include two vacuum pumps, i.e., a first vacuum pump and a second vacuum pump, which are respectively connected with the reaction chamber 110 and the containing space 150, so that the gas pressures in the reaction chamber 110 and the containing space 150 can be independently adjusted to different values, for example, the gas pressure in the containing space 150 is less than the atmospheric pressure and higher than the gas pressure in the reaction chamber 110 during the execution of the chemical vapor deposition process. A plurality of radiant heat sources 130 are arranged in the containing space 150.

[0067] As can be seen from the above, during the process, the gas pressure in the containing space 150 between the outer shell 140 and the reaction chamber 110 is less than the atmospheric pressure, the reaction chamber 110 is in a high vacuum state, the pressure difference between the inside of the reaction chamber 110 and the containing space 150 is less than the absolute value of the pressure difference between the inside of the reaction chamber 110 and the atmospheric environment, and the containing space 150 reduces the pressure required to be borne by the cavity wall of the reaction chamber 110, so that there is no need to arrange too many pressure-bearing strips on the cavity wall of the reaction chamber 110, which ensures the uniformity of the heat energy transmitted by the radiant heat sources 130 and helps the uniformity of the film deposition of the substrate W.

[0068] In some embodiments, the chemical vapor deposition device further comprises a first gas driving device 161 to enhance the gas flow in the containing space 150. The arrangement position of the first gas driving device 161 is not limited as long as it can realize the regulation of the gas flow state in the containing space 150.

[0069] The first gas driving device 161 accelerates the gas flow in the containing space 150, converts the gas in the containing space 150 that performs free thermal motion into a clustered gas flow, reduces the temperature of the outer wall of the reaction chamber 110 within a certain range, so that the temperature of the outer wall of the reaction chamber 110 is lower than the limited temperature, prevents the deposition of the reaction gas on the inner wall of the reaction chamber 110 from forming pollution particles that fall off, and reduces the possibility of pollution of the substrate W.

[0070] Optionally, the chemical vapor deposition device is a processing device for epitaxial growth, the gas inlet opening and the gas outlet opening of the reaction chamber 110 of the device are used to form a reaction gas flow parallel to the tray 120, so as to make the gas flow above the substrate W uniform, and further ensure the uniformity of epitaxial growth.

[0071] Embodiment one

[0072] As Figures 1 to 4 In combination with the drawings, a schematic diagram of a chemical vapor deposition device (CVD) of the embodiment is shown, which includes a reaction chamber 110 with a rectangular gas flow space (see Figure 4 ). The reaction chamber 110 can be used to process one or more substrates W. The reaction chamber 110 includes a gas inlet area provided with a gas inlet opening and a gas outlet area provided with a gas outlet opening, and a reaction area between the gas inlet area and the gas outlet area. Process gas flows horizontally into the reaction chamber 110 (see Figure 3a ) from the gas inlet opening according to the direction shown by the arrow in the figure, and exhaust gas is discharged from the gas outlet. The reaction chamber 110 is a flat rectangular structure, and the process gas flows horizontally in the reaction chamber 110, which ensures the uniformity of the gas flow in the reaction chamber 110, and further ensures the stability of the thin film deposition process. During the process, the gas pressure adjusting device independently adjusts the gas pressure in the reaction chamber 110 and the containing space 150, so that the gas pressure in the containing space 150 is less than the atmospheric pressure, and the radiant heat source 130 provides heat energy for the substrate W.

[0073] As can be seen from the above, during the process, the containing space 150 between the outer shell 140 and the reaction chamber 110 of the chemical vapor deposition device is in a low pressure state, and the pressure difference between it and the reaction chamber 110 is less than the pressure difference between the reaction chamber 110 and the atmospheric environment. In the case of ensuring that the thin film deposition process of the substrate W in the reaction chamber 110 proceeds normally, the containing space 150 reduces the pressure bearing pressure of the cavity wall of the reaction chamber 110, so that the reaction chamber 110 does not need to be thickened or multiple pressure bearing strips are added to ensure the pressure bearing capacity, which ensures the heat energy transfer efficiency of the radiant heat source 130, avoids waste of heat energy, and also ensures the uniformity of heat energy transfer. At the same time, the reaction gas flowing in the square structure reaction chamber 110 maintains a rectangular shape at all times, so as to ensure that the reaction gas flows horizontally in the reaction chamber 110, ensure the uniformity of the gas flow in the reaction chamber 110, and the uniform heat energy provided by the radiant heat source 130 is applied to the uniformly flowing reaction gas, which further ensures the uniformity of the thin film deposition of the substrate W, and improves the yield of the substrate production.

[0074] Furthermore, in this embodiment, the first gas driving device 161 is disposed within the accommodating space 150 to drive gas to flow around the outer wall of the reaction chamber 110 and the inner wall of the outer casing within the accommodating space 150. The gas flowing in the accommodating space 150 carries away the heat from the outer wall of the reaction chamber 110, thereby cooling the reaction chamber 110 and preventing contaminants from adhering to the inner wall of the reaction chamber 110. Optionally, the first gas driving device 161 is a fan, and the first gas driving device 161 is respectively disposed on both sides of the reaction chamber 110 to enhance the gas flow within the accommodating space 150.

[0075] To further improve the temperature control effect of the containment space 150, the chemical vapor deposition apparatus also includes a first heat exchange device 162, both of which are disposed within the containment space 150. The first heat exchange device 162 exchanges heat with the gas flowing in the containment space 150, ensuring that the temperature of the flowing gas remains lower than the temperature of the reaction chamber 110. The first gas drive device 161 drives the gas within the containment space 150 to flow in a loop formed by the reaction chamber 110 and the outer casing 140, thereby reducing the temperature of the outer wall of the reaction chamber 110 and preventing contaminants from depositing on the inner wall of the reaction chamber 110. Simultaneously, the gas flows around the reaction chamber 110, cooling the outer wall of the reaction chamber 110 from all directions, ensuring the uniformity of temperature distribution within the reaction chamber 110.

[0076] Optionally, the first heat exchange device 162 is a heat-conducting fin. Preferably, the fan is integrated onto the heat-conducting fin. Of course, the type and arrangement of the first heat exchange device 162 and the first gas drive device 161 are not limited to those described above, and they can also be other structures with the same function, which the present invention does not limit.

[0077] like Figure 2 As shown in Figure 3, in this embodiment, the bottom wall of the reaction chamber 110 includes a downwardly extending extension tube 121. A rotating shaft 122 is disposed within the extension tube 121. The top of the rotating shaft 122 includes multiple support rods for supporting and driving the tray 120, causing the substrate W carried by the tray 120 to rotate within the reaction chamber 110, thereby ensuring uniform film deposition on the substrate W. Optionally, the rotating shaft 122 can be made of quartz to reduce the risk of particle contamination. Furthermore, a magnetohydrodynamic seal is used between the bottom of the extension tube 121 and the rotating shaft 122 to ensure a vacuum environment within the reaction chamber 110, reducing the possibility of contamination. Simultaneously, the magnetohydrodynamic seal does not resist the rotation of the rotating shaft 122, further ensuring process stability.

[0078] In the embodiment, the radiant heat source 130 in the accommodating space 150 provides heat energy for the reaction region of the reaction chamber 110 to ensure the thermal uniformity of the reaction region. Further, in order to ensure the utilization rate of the radiant heat energy of the radiant heat source 130, a temperature control reflecting plate 131 is arranged on the side of the radiant heat source 130 away from the cavity wall of the reaction chamber 110, the temperature control reflecting plate 131 reflects the heat energy radiated by the radiant heat source 130 to the direction of the reaction chamber 110, so as to maximize the heat energy generated by the radiant heat source 130 to be transferred into the reaction chamber 110. The temperature control reflecting plate 131 can be further provided with a cooling liquid flow channel, so that the temperature of the temperature control reflecting plate 131 will not be too high to cause deformation or to ensure the normal work of the radiant heat source 130, i.e. the heating lamp. Optionally, the temperature control reflecting plate 131 is a gold reflecting coating or an alumina coating or a titanium oxide coating or other infrared reflecting coating, and the present application is not limited thereto.

[0079] Figure 3b The schematic diagram of the chemical vapor deposition reactor of another embodiment of the present application is shown in FIG. 4, which is similar to the embodiment shown in FIG. 1, and the difference is that the exhaust region of the outer shell and the reaction cavity is improved and designed. Figure 3a The exhaust region of the outer shell and the reaction cavity is improved and designed compared with the embodiment shown in FIG. 1. As shown in FIG. 4, the exhaust region of the outer shell and the reaction cavity is provided with a temperature control reflecting plate 131, which is arranged on the side of the radiant heat source 130 away from the cavity wall of the reaction chamber 110, the temperature control reflecting plate 131 reflects the heat energy radiated by the radiant heat source 130 to the direction of the reaction chamber 110, so as to maximize the heat energy generated by the radiant heat source 130 to be transferred into the reaction chamber 110. The temperature control reflecting plate 131 can be further provided with a cooling liquid flow channel, so that the temperature of the temperature control reflecting plate 131 will not be too high to cause deformation or to ensure the normal work of the radiant heat source 130, i.e. the heating lamp. Optionally, the temperature control reflecting plate 131 is a gold reflecting coating or an alumina coating or a titanium oxide coating or other infrared reflecting coating, and the present application is not limited thereto. Figure 3bAs shown, the outer shell end plate 343 is tightly connected with the outer shell top plate 141 and bottom plate 142 to achieve the air tightness between the containment space 150' and the atmosphere. The second fastener 344 is tightly connected with the second flange of the reaction chamber to achieve the air tightness between the second fastener and the external containment space; at least one pressure rod 345 is located between the outer shell end plate 343 and the second fastener 344, so that the second fastener 344 is tightly pressed to the second flange 115 to achieve the sealing of the reaction chamber space 110. The pressure rod 345 passes through the outer shell end plate 343 to the atmospheric space outside the outer shell, and the pressure device 346 provides a pressing force to the pressure rod. The pressure device can be a pneumatic cylinder, one end of which is sealed with the outer side wall of the outer shell end plate 343, and the driving shaft in the pneumatic cylinder drives the pressure rod 345 to move horizontally. The pressure device 346 can also be a gas-tight bellows surrounding the pressure rod, one end of which is tightly fixed with the outer shell end plate, and the other end can be provided with a connecting piece tightly fixed with one end of the pressure rod. The bellows and the connecting piece form a gas-tight space that can move horizontally, and a driving device such as a pneumatic cylinder or a motor located in the atmospheric environment outside the outer shell drives the connecting piece to drive the pressure rod 345 to tightly press the second fastener 344 to the second flange 115. Such design can make the reaction chamber sealing and the outer shell sealing structure independent of each other, which is beneficial to reduce the design difficulty of the structure of the second fastener and the outer shell. The reaction chamber body will undergo a temperature change of several hundred degrees during the change from room temperature to stable process temperature, so the chamber will undergo a large volume expansion. Since the chamber is a cuboid, the largest volume expansion will occur along the longitudinal direction of the chamber. The second fastener 344 of the present application can adapt to the size change of the reaction chamber expansion while maintaining the tight pressure by the driving of the compressible pneumatic cylinder, and will not cause the deformation or rupture of the reaction chamber due to excessive stress. In addition to the position and structure of the pressure device described in the above embodiment, the pressure device can also be arranged between the outer shell end plate and the second fastener, and the pressure device provides a pressure to the second fastener through the pressure rod to achieve the air tightness of the reaction chamber. Even the pressure device can be arranged inside the outer shell to directly apply a pressing force to the second fastener to achieve the air tightness of the reaction chamber.

[0080] The second fastener 344 also includes a reaction chamber sealing cover and a waste gas exhaust pipe (310), so that the waste gas passes downward through the bottom plate 142 to the outside for exhaust.

[0081] A top radiation heat source 130a is arranged above the reaction chamber for heating the upper surface of the substrate in the reaction chamber, and a bottom radiation heat source 130b is arranged below the reaction chamber for heating the tray 120, so that the upper and lower surfaces of the substrate are synchronously heated.

[0082] As shown in FIG. 3 and Figure 4As shown, to further ensure the mechanical strength of the reaction chamber 110, the reaction chamber 110 can be provided with several reinforcing ribs 114 on the outer wall of the reaction cavity. Optionally, the density of the reinforcing ribs 114 on the outer wall of the reaction region of the reaction chamber 110 is less than that of the outer wall of the gas inlet region or the gas outlet region. In this embodiment, the outer wall of the reaction region of the reaction chamber 110 is not provided with reinforcing ribs 114, and only the outer wall of the gas inlet region and the gas outlet region is provided with reinforcing ribs 114 to enhance the mechanical strength of the reaction chamber 110 and improve its pressure resistance. The outer wall of the reaction region is not provided with reinforcing ribs 114, which further ensures the uniformity of the thermal radiation of the radiation heat source 130 to the reaction region in the reaction chamber 110, and further ensures the uniformity of the thin film deposition of the substrate W. Best of all, when the gas pressure in the internal accommodation space of the shell is 0.5 atm, the thickness of the reaction cavity wall can be slightly increased to 8-12 mm, so that the reaction region can still maintain the stability of the reaction cavity structure without reinforcing ribs. Further, when the gas pressure in the accommodation space is reduced to 0.3 atm, a smaller thickness of the reaction cavity wall can be selected. As the gas pressure decreases, the heat conduction efficiency between the reaction cavity wall and the outer shell in the accommodation space will decrease, and a heat-conducting gas with higher heat conduction performance than air, such as H2 or helium, can be selected.

[0083] In other embodiments, the outer wall of the reaction region can be provided with a reinforcing rib, the downward projection of the reinforcing rib passing through the center of the substrate to be processed, while the outer wall of the gas inlet region and the gas outlet region is not provided with a reinforcing rib or is also provided with one or more reinforcing ribs. Since the present application adopts a double-cavity structure, the pressure borne by the quartz outer wall of the reaction cavity is greatly reduced to less than half of the prior art, so that only one reinforcing rib can be provided in the reaction region to maintain the stability of the reaction cavity during long-term vacuum processing. The design of providing one reinforcing rib in the reaction region can reduce the wall thickness of the reaction cavity to a level close to that of the prior art, such as 6-8 mm, which slightly affects the uniformity of the temperature in the reaction cavity, but improves the heating efficiency of the overall reaction cavity to a certain extent, and the overall effect still far exceeds the design of providing multiple reinforcing ribs in the reaction region of the prior art. When the reaction cavity is provided with one reinforcing rib, the reinforcing rib extends downward to the bottom wall of the reaction cavity and is fused with the extension pipe 121. The thickness and shape of the extension pipe 121 are only designed to enclose the rotating shaft 122 in a cylindrical extension pipe in a vacuum, and cannot bear the great stress on the reinforcing rib caused by the atmospheric pressure of the entire cavity, so a transition part needs to be provided between the rotating shaft and the single reinforcing rib. The transition part is provided on the bottom wall of the reaction cavity and extends downward, and has a thickness greater than that of the bottom wall of the reaction cavity and an area much larger than the cross-sectional area of the pipe body of the extension pipe 121. The transition part is connected to the outer wall of the extension pipe 121 and can also be connected to the two end points of the reinforcing ribs on both sides. Finally, the reinforcing rib corresponding to the center of the substrate, the extension pipe 121 and the transition part jointly form a ring-shaped stress structure, so that the quartz reaction chamber 110 can bear the reduced air pressure difference of the present application.

[0084] In the embodiment, the reinforcing rib 114 and the reaction chamber 110 are both made of quartz. The quartz material is optically transparent, and the quartz-made reaction chamber 110 and reinforcing rib 114 can reduce the loss of heat energy generated by the radiation heat source 130 during transmission and improve the transmission efficiency of heat energy. In addition, the reinforcing rib 114 and the reaction chamber 110 are made of the same material, which reduces the processing difficulty of the equipment and further ensures the tightness of the combination of the two and enhances the pressure resistance.

[0085] In the embodiment, as shown in FIG. 3, the outer shell 140 provided outside the reaction chamber 110 includes a top plate 141, a bottom plate 142 and a side wall 143. The inner side of the outer shell 140 is provided with a first fastener 144 and a second fastener 145. The top plate 141, the bottom plate 142 and the side wall 143 together with the outer wall of the reaction chamber 110, the first fastener 144 and the second fastener 145 form a containing space 150. In the embodiment, the outer shell 140 is made of aluminum, and the first fastener 144 and the second fastener 145 are made of stainless steel.

[0086] Further, two ends of the reaction chamber 110 include a first flange 115 and a second flange 116, which are tightly fitted with a first fastener 144 and a second fastener 145 on the outer shell 140 respectively to fix the reaction chamber 110 in the outer shell 140. Optionally, the first flange 115, the second flange 116, the first fastener 144 and the second fastener 145 are connected by bolt assemblies. It should be noted that the connection mode of the reaction chamber 110 and the outer shell 140 is not limited to the above, and can also be other connection modes as long as the air-tight connection between the reaction chamber 110 and the outer shell 140 is achieved, and the present application does not limit this.

[0087] To further improve the cooling effect of the flowing gas in the containing space 150, in the present embodiment, cooling liquid pipelines 170 are arranged in the outer shell 140, the first fastener 144 and the second fastener 145, so that the flowing gas performs heat exchange to improve the cooling effect on the outer wall of the reaction chamber 110. Optionally, the cooling liquid is water or cooling oil or other cooling medium, and the present application does not limit this.

[0088] Further, as shown in the drawings, Figure 5 and Figure 6 In combination with the drawings, to further improve the temperature control efficiency of the containing space 150, the chemical vapor deposition device of the present application further comprises a temperature control loop 180, which is a closed gas flow pipeline and communicates with the containing space 150 to form a closed gas flow loop. Specifically, the temperature control loop 180 comprises a second gas driving device 181 and a second heat exchange device 182, the second gas driving device 181 drives the gas to flow in the closed loop, and the second heat exchange device 182 is used to cool the gas by heat exchange, so that the gas in the closed loop is kept at a low temperature, thereby reducing the temperature of the outer wall of the reaction chamber 110 and preventing the deposition of pollutants on the inner wall of the reaction chamber 110. Optionally, only one gas driving device is arranged in the closed loop formed by the temperature control loop 180 and the containing space 150, and the present application does not limit the number of gas driving devices as long as the gas flow in the loop can be strengthened.

[0089] Optionally, the gas in the temperature control loop 180 flows into the containing space 150 from the top and / or bottom of the containing space 150, and the gas in the containing space 150 flows out of the containing space 150 from both sides of the containing space 150. In the present embodiment, the gas in the temperature control loop 180 flows into the containing space 150 from the top and the bottom of the containing space 150 respectively, so that the temperature difference borne by the top and the bottom of the reaction chamber 110 is balanced, which helps to ensure the uniformity of the temperature in the reaction chamber 110 and further ensures the uniformity of the film deposition of the substrate W.

[0090] In the embodiment, the cooling gas flows out from both sides of the containing space 150, and then sequentially passes through the second heat exchange device 182 and the second gas driving device 181 of the temperature control loop 180. In the process state, the reaction chamber 110 is usually in a high-temperature state, and the temperature of the containing space 150 outside the reaction chamber 110 is also high. The temperature of the gas flowing out of the containing space 150 is slightly higher than the preset cooling temperature. In the embodiment, the gas flowing out of the containing space 150 is first subjected to heat exchange and cooling by the second heat exchange device 182, and then flows through the second gas driving device 181 to continue the gas flow circulation, thereby avoiding the direct contact of the overheated gas with the second gas driving device 181 and causing damage to the second gas driving device 181, prolonging the service life of the second gas driving device 181, and reducing the maintenance cost of the device.

[0091] Optionally, the gas for cooling is air, helium, nitrogen or a nitrogen-helium mixture to obtain the best thermal conductivity and fluid mass flow. Of course, the type of the gas is not limited to the above, and the gas can also be other gases having a cooling effect, and the present application does not limit this.

[0092] Further, as shown in Figure 5 , the temperature control loop 180 further comprises a controller 183 connected with the second gas driving device 181, and the controller 183 is used to control the second gas driving device 181 to regulate the flow speed of the cooling gas, so as to realize the accurate regulation of the cooling of the cooling gas. Generally, the faster the flow speed of the cooling gas in the closed loop composed of the containing space 150 and the temperature control loop 180, the more obvious the cooling effect and the higher the cooling efficiency.

[0093] In actual application, some processes need to rapidly cool the reaction chamber 110 for a short time to achieve the expected process effect. Based on this, the chemical vapor deposition device of the present application further comprises a temperature control auxiliary loop 190. As shown in Figure 7 , the temperature control auxiliary loop 190 is in communication with the temperature control loop 180 and the containing space 150, and a gate can be arranged between the loops to communicate when needed. The temperature control auxiliary loop 190 comprises at least two containers with a pressure difference, and in the embodiment, it comprises a first container 191 with an internal pressure higher than the pressure of the containing space and a second container 192 with an internal pressure lower than the pressure of the containing space.

[0094] When it is necessary to rapidly cool the reaction chamber 110, the second gas driving device 181 of the temperature control loop 180 stops working, the first container 191 and the second container 192 of the temperature control sub-loop 190 are opened, and the gas in the closed loop formed by the containing space 150, the temperature control loop 180 and the temperature control sub-loop 190 rapidly flows in a short time, so as to rapidly take the heat of the outer wall of the reaction chamber 110 away from the periphery of the reaction chamber 110, so as to rapidly reduce the temperature of the reaction chamber 110. At the same time, the closed loop formed by the above-mentioned three parts has a long path, which provides sufficient time and path length for heat exchange of the cooling gas, and helps to realize rapid cooling of the reaction chamber 110.

[0095] Further, the temperature control sub-loop 190 of the present application further comprises a gas pressure control device connected with each container to adjust the gas pressure in the container. As described above, after the first container 191 and the second container 192 in the temperature control sub-loop 190 are opened to realize rapid cooling of the reaction chamber 110, the gas pressure in the first container 191 and the second container 192 will be consistent with the gas pressure in the containing space 150. In order to use it for the next rapid cooling process, the gas pressure control device is used to adjust the gas pressure in the first container 191 and the second container 192, so that each container has a certain gas pressure difference with the containing space 150. Optionally, the gas pressure control device comprises a vacuum pump, and of course it can also comprise other gas pressure adjusting devices.

[0096] Based on the same inventive concept, the present application also provides a method for depositing by using the chemical vapor deposition device, which comprises: conveying a substrate W into the tray 120 in the reaction chamber 110; adjusting the gas pressure in the containing space 150 by using the gas pressure adjusting device, so that the gas pressure in the containing space 150 is less than the atmospheric pressure; and performing a chemical vapor deposition process in the reaction chamber 110, and driving the gas in the containing space 150 to flow by using the first gas driving device 161. The method not only reduces the pressure borne by the cavity wall of the reaction chamber 110, avoids destroying the uniformity of the thin film deposition process in the reaction chamber 110, but also has a cooling effect on the outer wall of the reaction chamber 110. The gas flowing in the containing space 150 takes the heat of the outer wall of the reaction chamber 110 away from the outer surface of the reaction chamber 110, so as to prevent pollutants from adhering to the inner wall of the reaction chamber 110.

[0097] Optionally, the gas pressure adjusting device is used to adjust the gas pressure in the containing space 150 to 0.1-0.6 atm, so as to reduce the pressure difference between the inside and outside of the reaction chamber 110 and weaken the pressure borne by the reaction chamber 110. Of course, the gas pressure in the containing space 150 is not limited to the above range, and can be adjusted according to the actual process requirements, and the present application does not limit this. If the gas pressure in the containing space 150 is too low (<0.1 atm), there will be too few gas molecules in the containing space 150, and the first gas driving device 161 cannot drive a large number of gas molecules to move and collide between the outer wall of the reaction chamber 110 and the outer shell 140, which will greatly reduce the heat dissipation capacity of the reaction chamber 110, and a large amount of deposits will inevitably be produced on the inner wall of the reaction chamber 110, which will not only cause uneven temperature distribution but also cause particles to fall and cause device failure. If the gas pressure is too high, the effect of reducing the gas pressure difference between the inside and outside of the reaction chamber 110 of the present application will not be obvious, and a large number of reinforcing ribs 114 still need to be arranged on the outer wall of the cavity to enable the cavity to bear the large gas pressure difference on both sides.

[0098] Further, the method further comprises: the second gas driving device 181 of the temperature control loop 180 drives the gas to flow in the closed loop composed of the temperature control loop 180 and the containing space 150, and the second heat exchange device 182 performs heat exchange on the gas in the closed loop, so as to keep the gas in a low-temperature state and improve the cooling effect of the gas on the reaction chamber 110.

[0099] Further, the method further comprises: when the process requires short-time and rapid cooling of the reaction chamber 110, the second gas driving device 181 of the temperature control loop 180 stops working, the first container 191 and the second container 192 of the temperature control auxiliary loop 190 are opened, the gas in the temperature control loop 180, the temperature control auxiliary loop 190 and the containing space 150 is caused to flow rapidly, and the heat of the outer wall of the reaction chamber 110 is rapidly taken away, so as to reduce the temperature of the outer wall of the reaction chamber 110.

[0100] Based on the above method, the method further comprises: after the first container 191 and the second container 192 of the temperature control auxiliary loop 190 are opened, a gas pressure control device is used to adjust the internal gas pressure of the first container 191 and the second container 192, so as to keep a certain pressure difference between the first container 191, the second container 192 and the containing space 150.

[0101] Embodiment Two

[0102] As Figure 8As shown, it is a chemical vapor deposition device of the embodiment. The reaction chamber 210 of the chemical vapor deposition device comprises a top wall 211 in the shape of a dome. In the embodiment, the top wall 211 and the bottom wall 212 of the reaction chamber 210 are both in the shape of a dome, the height from the edge of the substrate W to the top wall 211 is H1, the height from the center of the substrate W to the top wall 211 is H2, and the H2 < 1.05*H1. The outer side of the reaction chamber 210 is provided with an outer shell 240, and when the deposition process is performed, the gas pressure in the containing space 250 between the two is adjusted to be less than atmospheric pressure by using a gas pressure adjusting device, and a plurality of radiant heat sources 230 are arranged in the containing space 250 to provide heat energy.

[0103] In the embodiment, on the basis that the gas pressure in the containing space 250 is less than atmospheric pressure, the top wall 211 and the bottom wall 212 of the reaction chamber 210 are in the shape of a dome with smaller curvature, which has stronger resistance to the pressure difference between the inside and outside of the reaction chamber 210, and the reaction chamber 210 does not need to be provided with reinforcing ribs on the cavity wall of the reaction chamber 210 to achieve greater pressure resistance. At the same time, the curvature of the dome of the reaction chamber 210 is very small, avoiding the problem of turbulent airflow distribution in the common dome structure, and the reaction gas can still maintain a horizontal flow state in the reaction region of the reaction chamber 210. The double-cavity structure of the embodiment reduces the gas pressure difference required to be borne by the dome-shaped reaction chamber 210, reduces the height of the dome, and the airflow in the reaction chamber 210 will not exist large-scale vertical diffusion airflow, which improves the uniformity of the airflow distribution in the reaction chamber 210, helps the uniformity of the film deposition of the substrate W, and ensures the yield of the production of the substrate W.

[0104] Similar to the first embodiment, in the embodiment, the chemical vapor deposition device further comprises a gas driving device, a temperature control loop and a temperature control sub-loop and the like. Optionally, the gas in the temperature control loop is injected from the top of the containing space 250 between the outer shell 240 and the reaction chamber 210, and flows out from the bottom of the containing space 250. Further, the other structures of the embodiment and the connection and action mode of each component can be similar to those of the first embodiment, which will not be repeated and limited here.

[0105] In summary, in the chemical vapor deposition device and method of the embodiment, the device combines the reaction chamber 110, the outer shell 140 and the gas pressure adjusting device, and in the process, the gas pressure in the containing space 150 between the reaction chamber 110 and the outer shell 140 is less than atmospheric pressure by the gas pressure adjusting device, which not only reduces the pressure difference between the inside and outside of the reaction chamber 110, relieves the pressure resistance of the reaction chamber 110, but also further ensures the uniformity of the airflow and the uniformity of the heating in the reaction chamber 110, helps the uniformity of the film deposition of the substrate W, and improves the yield of the process production of the substrate W.

[0106] Further, the device also comprises a first gas driving device 161 to enhance the gas flow in the containing space 150, the gas flow takes away the heat of the outer wall of the reaction chamber 110, reduces the temperature of the outer wall of the reaction chamber 110 in a certain range, realizes the uniform temperature reduction of the outer wall of the reaction chamber 110, prevents the deposition of pollutants on the reaction chamber 110, and ensures the cleanliness of the vacuum environment.

[0107] Further, the device also comprises a temperature control loop 180, which forms a closed loop with the containing space 150, and realizes the flow and heat exchange of the cooling gas in the closed loop through the second gas driving device 181 and the second heat exchange device 182, thereby improving the cooling efficiency of the reaction chamber 110.

[0108] Further, the device also comprises a temperature control sub-loop 190, which comprises a first container 191 and a second container 192 having a pressure difference with the containing space 150, and can realize short-time rapid cooling of the reaction chamber 110 to achieve the expected cooling effect, realize the regulation of the process, and ensure the effect of the thin film deposition of the substrate W.

[0109] Further, the reaction chamber 110 in the device can be a dome-shaped structure, the height from the edge of the substrate W to the top wall is H1, the height from the center of the substrate W to the top wall is H2, and the dome-shaped structure has a stronger pressure resistance, and can realize a larger pressure resistance without the need for additional reinforcing ribs 114 and other structures, and will not affect the heat transfer efficiency of the radiant heat source 130. In addition, the curvature of the dome-shaped structure of the reaction chamber 110 is smaller, and the airflow in the reaction chamber 110 will not exist a large-scale vertical diffusion airflow, and this structure improves the uniformity of the airflow distribution in the reaction chamber 110, and helps the uniformity of the thin film deposition of the substrate W, and ensures the yield of the substrate W production.

[0110] In some embodiments, the chemical vapor deposition device is an epitaxial growth processing device, which is used for homoepitaxy process, such as silicon epitaxy. In the epitaxial growth processing device, the gas flow needs to flow uniformly along the direction parallel to the tray 120, so the gas inlet opening and the gas outlet opening are located at both ends of the reaction chamber 110, so as to form a long and narrow gas channel in the reaction chamber 110.

[0111] The present application can be used in other vacuum processing apparatuses, such as rapid thermal processing apparatus (RTP), in which the substrate is directly placed into the rapid thermal processing apparatus with processing gas, and the substrate is rapidly heated by the heating lamp assembly arranged above and below the processing apparatus to process the surface of the substrate, but the processing gas does not react on the substrate to form a new film. Since the rapid thermal processing apparatus also requires a vacuum state inside, and the space between the lamp assembly and the interior of the reactor is separated by a transparent reaction chamber wall, the present application can also be applied to this application to reduce the design thickness of the reaction chamber wall. Therefore, the present application can be applied to any vacuum reaction chamber requiring lamp assembly heating.

[0112] Although the present application has been described in detail by the preferred embodiments, it should be appreciated that the above description should not be considered as limiting the present application. Various modifications and alternatives will be apparent to those skilled in the art after reading the above description. Therefore, the scope of the present application should be defined by the appended claims.

Claims

1. A chemical vapor deposition apparatus characterized by comprising: The chemical vapor deposition device comprises: a reaction chamber made of transparent quartz for vacuum reaction, which has an inlet opening and an outlet opening, and a tray is arranged in the reaction chamber for carrying a substrate; an outer shell arranged outside the reaction chamber, and a containing space is formed between the inner wall of the outer shell and the outer wall of the reaction chamber; a plurality of radiant heat sources arranged in the containing space for heating the substrate through the outer wall of the reaction chamber; a gas pressure adjusting device for independently adjusting the gas pressure in the reaction chamber and the containing space, so that the gas pressure in the containing space is 0.1-0.6 atm.

2. The chemical vapor deposition apparatus according to claim 1, wherein Further comprising: a gas driving device for enhancing the gas flow in the containing space.

3. The chemical vapor deposition device according to claim 2, wherein the gas driving device is arranged in the containing space to drive the gas to flow around the outer wall of the reaction chamber and the inner wall of the outer shell in the containing space, and the outer shell is further provided with a first heat exchange device.

4. The chemical vapor deposition device according to claim 1, wherein the reaction chamber comprises an inlet area corresponding to the inlet opening, an outlet area corresponding to the outlet opening, and a reaction area between the inlet area and the outlet area; the outer wall of the reaction chamber is further provided with a plurality of reinforcing ribs, and the reinforcing rib density of the outer wall in the reaction area is less than that of the outer wall in the inlet area or the outlet area.

5. The chemical vapor deposition apparatus of claim 1, wherein the reaction chamber comprises an inlet area corresponding to the inlet opening, an outlet area corresponding to the outlet opening, and a reaction area between the inlet area and the outlet area; the outer wall in the reaction area is provided with a reaction area reinforcing rib, and the reaction area reinforcing rib is projected downward through the center of the substrate, and the reinforcing rib adjacent to the reaction area reinforcing rib is located in the inlet area or the outlet area corresponding to the outer wall of the reaction chamber.

6. The chemical vapor deposition device according to claim 4 or 5, wherein the reinforcing rib and the reaction chamber are both made of quartz.

7. The chemical vapor deposition device according to claim 1, wherein the bottom of the reaction chamber comprises an extension pipe extending downward, and a rotating shaft is arranged in the extension pipe, the top of the rotating shaft is used to support and drive the tray, so that the substrate rotates in the reaction chamber.

8. The chemical vapor deposition device according to claim 1, wherein the reaction chamber comprises a dome-shaped top wall, the height from the edge of the substrate to the top wall is H1, and the height from the center of the substrate to the top wall is H2, and H2<1.05*H1.

9. The chemical vapor deposition device according to claim 1, wherein the two ends of the reaction chamber comprise a first flange and a second flange, and the first flange and the second flange are tightly attached to the first fastener and the second fastener on the outer shell, respectively.

10. The chemical vapor deposition device according to claim 9, wherein the outer shell comprises a top plate, a bottom plate and a side wall, and the top plate, the bottom plate and the side wall together with the outer wall of the reaction chamber, the first fastener and the second fastener form the containing space.

11. The chemical vapor deposition apparatus of claim 9, wherein the outer housing is made of aluminum, and the first and second fasteners are made of stainless steel.

12. The chemical vapor deposition apparatus of claim 9, wherein the outer housing, the first fastener, and the second fastener are provided with cooling liquid channels.

13. The chemical vapor deposition apparatus of claim 9, further comprising: a temperature control loop in communication with the accommodation space, the temperature control loop and the accommodation space together forming a closed loop, the closed loop containing the gas driving device and a second heat exchange device, the gas driving device driving the gas to flow within the closed loop, and the second heat exchange device cooling the gas in the closed loop.

14. The chemical vapor deposition apparatus of claim 13, wherein the gas in the temperature control loop flows into the accommodation space from the top and / or the bottom of the accommodation space, and the gas in the accommodation space flows out of the accommodation space from both sides of the accommodation space.

13. The chemical vapor deposition apparatus of claim 2 wherein, 15. The chemical vapor deposition apparatus of claim 13, wherein the gas is air, helium, nitrogen, or a mixture of nitrogen and helium.

16. The chemical vapor deposition apparatus of claim 13, further comprising: a temperature control sub-loop in communication with the temperature control loop, the temperature control sub-loop containing a first container with an internal gas pressure higher than the gas pressure in the accommodation space, and a second container with an internal gas pressure lower than the gas pressure in the accommodation space.

17. The chemical vapor deposition apparatus of claim 13, wherein the exhaust end of the outer housing comprises an outer housing end plate, there is a gap between the outer housing end plate and the second fastener, and at least one pressure device is disposed in the gap or outside the outer housing to provide a pressing force to the second fastener.

18. A method for processing a substrate, comprising the steps of: placing a substrate into a tray in a reaction chamber; controlling the gas pressure in the accommodation space to be less than atmospheric pressure by using a gas pressure adjusting device, wherein the gas pressure in the accommodation space is controlled to be 0.1 to 0.6 atmospheres by using the gas pressure adjusting device; performing a chemical vapor deposition process in the reaction chamber; and 16. The chemical vapor deposition apparatus of claim 13, wherein driving the gas in the accommodation space to flow by using a gas driving device.

19. A processing apparatus, comprising: a reaction chamber having gas inlet and outlet openings at both ends, the reaction chamber being made of transparent quartz for performing a vacuum reaction, the reaction chamber having a tray disposed therein for holding a substrate, the gas inlet and outlet openings being configured to form a reaction gas flow parallel to the tray, the reaction chamber including a gas inlet region corresponding to the gas inlet opening, a gas outlet region corresponding to the gas outlet opening, and a reaction region between the gas inlet region and the gas outlet region; 17. The chemical vapor deposition apparatus of claim 9, wherein an outer housing disposed outside the reaction chamber, an inner wall of the outer housing and an outer wall of the reaction chamber forming an accommodation space therebetween, the accommodation space being connected to a first gas pressure adjusting device, the first gas pressure adjusting device controlling the gas pressure in the accommodation space to be 0.1 to 0.6 atmospheres; 18. A method of deposition using the chemical vapor deposition apparatus according to claim 2, characterized by, a plurality of radiant heat sources disposed in the accommodation space, each of the radiant heat sources being disposed outside the reaction chamber to heat the substrate.

20. The processing apparatus of claim 19, wherein the first gas pressure adjusting device comprises: ​ ​ ​ 19. A processing apparatus for epitaxial growth, characterized by comprising: ​ ​ ​ ​ ​ The reaction chamber further comprises a plurality of reinforcing ribs arranged on the outer wall of the reaction chamber, wherein the density of the reinforcing ribs arranged on the outer wall of the reaction region is less than the density of the reinforcing ribs arranged on the outer wall of the gas inlet region or the gas outlet region.

21. The processing device of claim 19, wherein, The bottom of the reaction chamber comprises an extension pipe extending downwardly, and a rotating shaft is arranged in the extension pipe, wherein the top of the rotating shaft is used to support and drive the tray so that the tray rotates in the reaction chamber.

22. The processing device of claim 19, wherein, Further comprising: a temperature control loop in communication with the accommodation space to form a closed loop, wherein the closed loop comprises a gas driving device and a heat exchange device, the gas driving device drives the gas to flow in the closed loop, and the heat exchange device is used to cool the gas.

23. The processing device of claim 19, wherein, Further comprising: a second gas pressure adjusting device in communication with the reaction chamber, wherein the first and second gas pressure adjusting devices are independently controlled so that the gas pressure in the accommodation space is lower than the atmospheric pressure and higher than the gas pressure in the reaction chamber when epitaxial growth is performed.

24. The processing device of claim 19, wherein, Further comprising: a gas driving device used to enhance the gas flow in the accommodation space.

25. A vacuum processing apparatus, characterized by, Further comprising: a transparent quartz vacuum processing chamber for performing vacuum reaction, which has a gas inlet opening and a gas outlet opening, and a tray arranged in the vacuum processing chamber for carrying a substrate; an outer shell arranged outside the vacuum processing chamber, wherein the inner wall of the outer shell and the outer wall of the vacuum processing chamber form an accommodation space; a plurality of radiant heat sources arranged in the accommodation space for heating the substrate through the outer wall of the vacuum processing chamber; a gas pressure adjusting device used to independently control the gas pressure in the accommodation space and the vacuum processing chamber so that the gas pressure in the accommodation space is 0.1-0.6 atm; the vacuum processing chamber comprises a first flange and a second flange at two ends, and the first flange and the second flange are tightly attached to a first fastener and a second fastener on the outer shell, respectively; the gas outlet end of the outer shell comprises an outer shell end plate, and a gap exists between the outer shell end plate and the second fastener, and at least one pressure device is arranged in the gap or outside the outer shell to provide a pressing force to the second fastener.

Images