Display device

Abstract

According to one aspect of the present disclosure, the present disclosure relates to a display device including a display panel, a first polarizer disposed below the display panel, a second polarizer disposed on the display panel, and an antistatic film disposed between the display panel and the second polarizer, wherein the antistatic film includes a silicon-based matrix, and a polythiophene-based compound and a dopant having a high boiling point dispersed in the silicon-based matrix, and the silicon-based matrix includes a tetraalkoxysilane, a glycidyloxyalkyltrialkoxysilane, and an aminoalkyltrialkoxysilane, wherein the silicon-based matrix is cured or to be cured. Accordingly, the display device includes an antistatic film including a cheap polythiophene-based compound as a conductive material, thereby providing excellent high-temperature and high-humidity stability and excellent electrostatic discharge effects.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from Korean Patent Application No. 10-2021-0193463 filed in the Korean Intellectual Property Office on December 30, 2021, the disclosure of which is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a display device, and more particularly, to a display device including an antistatic film having excellent high-temperature and high-humidity reliability to improve the reliability of the display device, reduce costs, and simplify a method of forming the antistatic film. Background Art

[0004] Recently, with the advent of the information age, the field of displays that visually express electrical information signals has rapidly developed. Accordingly, various display devices with excellent performance, such as thinness, light weight, and low power consumption, have emerged. Specific examples of such display devices include liquid crystal display devices (LCDs), plasma display panels (PDPs), field emission displays (FEDs), and organic light-emitting display devices (OLEDs).

[0005] Typically, a liquid crystal display device consists of two substrates, each having one surface with electrodes formed thereon, arranged so that the electrode surfaces face each other. With liquid crystal material interposed between the two substrates, the liquid crystal molecules are moved by an electric field generated by applying a voltage to the electrodes formed on each substrate, thereby displaying an image. The electric field is generated by applying a voltage to the electrodes formed on each substrate, and the image is displayed by the transmission of light that varies with the electric field. However, during the manufacturing of each substrate of an liquid crystal display device, a significant amount of static electricity is generated during the unit process.

[0006] Therefore, in order to discharge static electricity and effectively release the charge accumulated when forming the finished product, indium tin oxide (ITO) or indium zinc oxide (IZO), which is a transparent conductive material, is provided on the outer surface of the upper substrate to be used as an antistatic film. However, indium tin oxide (ITO) or indium zinc oxide (IZO) is a very expensive transparent conductive metal material, which increases the manufacturing cost.

[0007] In recent years, products with built-in touch sensors that can be operated by touching the screen, such as mobile phones, tablet computers, and laptop computers that can be carried alone, have been launched on the market and have attracted widespread attention from users. In line with this trend, various attempts have recently been made to give liquid crystal display devices used as display elements in various application products a touch function. For example, in an add-on liquid crystal display device, a substrate or panel with a separate touch element formed therein is attached to a liquid crystal panel. As another example, in an embedded liquid crystal display device, a touch electrode is formed in the display panel unit so that a touch function is installed therein without attaching a separate touch panel to the display device. Among them, embedded liquid crystal display devices have the advantages of being thin, low-cost, and lightweight, which has led to an increasing demand for them recently. Summary of the Invention

[0008] In an embedded liquid crystal display device, when the antistatic film is formed of a transparent conductive metal material such as ITO, even if a touch sensor is provided, the conductivity of the antistatic film is greater than the magnitude of the capacitance caused by the touch, thereby causing discharge. Therefore, the touch sensitivity is significantly reduced. Therefore, in order to ensure both touch sensitivity and electrostatic discharge effects, the antistatic film needs to be formed of a material having impedance within a specific frequency band. Therefore, a method of placing a polarizer on a display panel is proposed, wherein the polarizer has a conductive layer formed on the upper surface, and the conductive layer has impedance within a specific frequency band. However, in this case, other problems may arise, such as complex processing steps and increased costs.

[0009] Therefore, a method for forming an antistatic film by coating a solution has been proposed, in which a conductive material, such as carbon nanotubes or a polythiophene-based polymer (e.g., PEDOT:PSS), is dispersed between the upper polarizer (i.e., the second polarizer) and the display panel. Carbon nanotubes have excellent high-temperature stability, but there is a problem of limited cost reduction due to the high cost of the material. In addition, polythiophene-based polymers are cheaper than carbon nanotubes, but have poor stability at high temperatures and high humidity.

[0010] Therefore, one object to be achieved by the present disclosure is to provide a display device including an antistatic film using an inexpensive polythiophene-based polymer to provide excellent electrostatic discharge effect and excellent high-temperature and high-humidity reliability.

[0011] Another object to be achieved by the present disclosure is to provide a display device having an excellent electrostatic discharge effect without reducing touch sensitivity.

[0012] The objects of the present disclosure are not limited to the above objects, and those skilled in the art can clearly understand other objects not mentioned above through the following description.

[0013] According to one aspect of the present disclosure, a display device includes a display panel; a first polarizer disposed below the display panel; a second polarizer disposed on the display panel; and an antistatic film disposed between the display panel and the second polarizer, wherein the antistatic film includes a silicon-based matrix, and a polythiophene-based compound and a dopant having a high boiling point dispersed in the silicon-based matrix, and the silicon-based matrix includes tetraalkoxysilane, glycidyloxyalkyltrialkoxysilane and aminoalkyltrialkoxysilane, wherein the silicon-based matrix is ​​cured or to be cured.

[0014] According to another aspect of the present disclosure, the silicon-based matrix may preferably be cured, and further include (per)fluoroalkylalkoxysilane and a compound represented by the following Chemical Formula 1.

[0015] [Chemical Formula 1]

[0016]

[0017] In Chemical Formula 1, R1 is selected from hydrogen, an alkyl group having 1 to 10 carbon atoms, and a branched alkyl group having 3 to 10 carbon atoms, n is an integer of 1 to 100, and m is an integer of 1 to 10.

[0018] Additional details of exemplary embodiments are included in the detailed description and accompanying drawings.

[0019] According to the present disclosure, a display device includes an antistatic film including an inexpensive polythiophene-based compound as a conductive material, thereby providing excellent high-temperature and high-humidity stability and an excellent electrostatic discharge effect.

[0020] Furthermore, according to the present disclosure, the electrostatic discharge effect is excellent without reducing touch sensitivity.

[0021] Furthermore, according to the present disclosure, in a display device, an antistatic film is formed between a display panel and an upper polarizer (ie, a second polarizer) through a simple process to simplify the process and contribute to cost reduction and productivity improvement.

[0022] The effects according to the present disclosure are not limited to the above-exemplified contents, and more various effects are included in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0024] Figure 1 is a schematic plan view of a display device according to an exemplary embodiment of the present disclosure;

[0025] Figure 2 is a schematic cross-sectional view taken along the line I-I' of Figure 1

[0026] Figure 3 FIG. 6 illustrates changes in surface resistance of an antistatic film over time depending on the presence of glycidyloxyalkyltrialkoxysilane and / or aminalkyltrialkoxysilane;

[0027] Figure 4 FIG. 6 illustrates changes in surface resistance of an antistatic film over time according to each of Comparative Example 1 and Reference Examples 1 to 3.

[0028] Figure 5 FIG. 6 illustrates changes in surface resistance of an antistatic film over time according to each of Comparative Example 1 and Reference Examples 1 to 3. DETAILED DESCRIPTION

[0029] Advantages and features of the present disclosure, and methods of accomplishing the same, will become apparent from reference to the following detailed description of exemplary embodiments and by referring to the drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but is implemented in various forms. The exemplary embodiments are provided merely to enable sufficient understanding of the disclosure and the scope of the present disclosure by those skilled in the art. Therefore, the present disclosure will be only limited by the scope of the appended claims.

[0030] The shapes, sizes, ratios, angles, numbers, and the like shown in the drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Throughout the specification, like reference numerals generally refer to like elements. Also, in the following description of the present disclosure, detailed explanations of known related technologies can be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. The terms such as "include," "have," and "consist of" used herein are generally intended to allow the addition of other components, unless the terms are used with the term "only." Unless otherwise explicitly stated, any reference to a singular can include a plural.

[0031] Components are interpreted to include ordinary error ranges even if not explicitly stated.

[0032] When terms such as "upper," "above," "lower," and "next" are used to describe the positional relationship between two parts, one or more parts can be located between the two parts, unless the terms are used with the term "immediately" or "directly."

[0033] When a second element or layer is disposed "on" a first element or layer, a third layer or a third element can be directly interposed on or between the second element. ​

[0034] Although the terms "first," "second," and the like are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, in technical terms, the first component to be mentioned below may be the second component of the present disclosure.

[0035] Throughout the specification, like reference numerals generally refer to like elements.

[0036] The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present disclosure is not limited to the illustrated sizes and thicknesses of the components.

[0037] The features of the various embodiments of the present disclosure may be partially or entirely linked or combined with each other, and may be technically related and operated with each other in various ways, and the embodiments may be performed independently of each other or in association with each other.

[0038] Hereinafter, a display device according to an exemplary embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0039] Figure 1 is a schematic plan view of a display device according to an exemplary embodiment of the present disclosure. Figure 2 It is along Figure 1 Schematic cross-sectional view taken along line II′. Figure 1 and Figure 2 A display device 100 according to an exemplary embodiment of the present disclosure includes a display panel PNL (not shown in the drawings), a first polarizer 121, a second polarizer 122, an antistatic film 150, a ground pad GND, and a conductive member AGP. The display panel PNL includes a lower substrate 110, a liquid crystal layer 130, and an upper substrate 140.

[0040] The display panel PNL is a panel that displays an image. For example, the display panel PNL may be a liquid crystal display panel that includes a liquid crystal layer and adjusts the light transmittance of the liquid crystal to display an image. Hereinafter, the display device 100 according to an exemplary embodiment of the present disclosure will be described in detail assuming that the display panel PNL is a liquid crystal display panel. However, the display panel PNL is not limited to a liquid crystal display panel.

[0041] The display panel PNL includes regions defined as a display area and a non-display area. The display area is where multiple pixels are arranged to substantially display an image. The display area includes pixels and driver elements, such as thin-film transistors, for driving the pixels. The pixels include an emission region for displaying an image, and the driver elements drive the pixels. The non-display area is an area blocked by a light-shielding member and does not substantially display an image. The non-display area includes various wiring and printed circuit boards for driving the pixels, as well as the driver elements provided in the display area.

[0042] A backlight unit may be disposed on the rear surface of the display panel PNL. The backlight unit is a light source that provides light to the liquid crystal display panel. For example, the backlight unit may be an edge type backlight unit or a direct type backlight unit.

[0043] The display panel PNL may be an embedded touch display panel having an embedded touch sensor. For ease of description, it is assumed below that the display panel PNL is an embedded touch display panel. However, this is merely an example, and the display panel PNL of the present disclosure is not limited to an embedded touch display panel.

[0044] The lower substrate 110 is a thin film transistor array substrate, which is equipped with multiple pixels and a thin film transistor for driving each pixel. A plurality of gate lines and a plurality of data lines are formed on the lower substrate 110 so as to intersect to define multiple pixel areas. A thin film transistor for driving a pixel can be provided at each intersection of the plurality of gate lines and the plurality of data lines.

[0045] Each thin film transistor is connected to a pixel electrode formed in each pixel to supply a data voltage to each pixel, the data voltage being supplied through the data line in response to a scan signal applied through the gate line.

[0046] The common electrode and the pixel electrode form an electric field to control the liquid crystal. The electric field is formed according to the data voltage and the common voltage applied through the data line to control the arrangement of the liquid crystal, thereby driving the liquid crystal layer 130.

[0047] Each of the common electrode and the pixel electrode may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0048] The lower substrate 110 includes a touch sensor for sensing capacitance based on a user's touch to detect the touch. For example, the touch sensor may include a plurality of drive electrodes and a plurality of sensing electrodes, and a touch drive signal is supplied to the plurality of drive electrodes, and the plurality of sensing electrodes sense the touch signal. The touch driver is disposed on the lower substrate 110 corresponding to the non-display area. The touch driver may include a touch driver IC and a touch sensing IC. The touch driver IC supplies the touch drive signal to the plurality of touch drive electrodes via the drive electrode lines. The touch sensing IC is connected to the plurality of sensing electrodes via the touch sensing electrode lines to sense the touch signal.

[0049] In the embedded touch type display panel, common electrodes are patterned to serve as driving electrodes and sensing electrodes, wherein the common electrodes are formed to supply a common voltage to pixels.

[0050] A ground pad GND may be provided on the lower substrate 110 corresponding to the non-display area to ground the charge formed by static electricity. The ground pad GND discharges the charge accumulated by static electricity. The ground pad GND is electrically connected to the antistatic film 150 by a conductive member AGP described below.

[0051] The upper substrate 140 is a color filter array substrate including a color filter and a black matrix. The color filter selectively transmits light having a specific wavelength. Therefore, while passing through the liquid crystal layer 130 and the color filter between the lower substrate 110 and the upper substrate 140, the light emitted from the backlight unit is converted into light of various colors. For example, the color filter includes red, green, and blue color filters, which are arranged so as to correspond to the color displayed by each pixel. The black matrix is ​​formed so as to correspond to the boundaries of the pixels to divide each pixel and suppress color mixing. In addition, the black matrix can hide the gate lines, data lines, or thin film transistors arranged on the lower substrate 110 so that they are not visible.

[0052] The liquid crystal layer 130 is disposed between the lower substrate 110 and the upper substrate 140. The liquid crystal layer 130 may be disposed on the thin film transistors and touch sensors provided on the lower substrate 110. The liquid crystal layer 130 contains a liquid crystal material such as liquid crystal molecules or liquid crystal polymers. The alignment of the liquid crystal material is controlled by an electric field applied to the liquid crystal layer 130 to adjust the transmittance of light generated by the backlight unit.

[0053] A first polarizer 121 is disposed below the display panel PNL. The first polarizer 121 is attached to the lower surface of the lower substrate 110 so as to overlap with the display area. A second polarizer 122 is disposed on the display panel PNL. The second polarizer 122 is disposed on the upper substrate 140 so as to overlap with the display area. Specifically, the second polarizer 122 may be attached to an antistatic film 150, to be described below.

[0054] For example, each of the first polarizer 121 and the second polarizer 122 can be formed by stretching polyvinyl alcohol dyed with iodine (I), but is not limited thereto. In each of the first polarizer 121 and the second polarizer 122, an absorption axis is formed in the stretching direction to absorb light that fluctuates in a direction parallel to the absorption axis and selectively transmit only light that fluctuates in a direction perpendicular to the absorption axis. Therefore, the optical characteristics and display quality of the display device 100 can be further improved.

[0055] An antistatic film 150 is disposed above the display panel PNL. The antistatic film 150 minimizes damage and touch sensing errors caused by static electricity generated during the manufacture and use of the display device 100. The antistatic film 150 is disposed on the upper surface of the upper substrate 140. The antistatic film 150 is formed in direct contact with the upper surface of the upper substrate 140. When the antistatic film 150 is formed in direct contact with the upper surface of the upper substrate 140, compared to conventional structures in which the antistatic film is formed on the upper surface of the second polarizer, the process is simplified, productivity is improved, and manufacturing costs are reduced.

[0056] Specifically, when the antistatic film is formed on the upper surface of the second polarizer, the second polarizer with the antistatic film formed therein is attached to the display panel, and a connecting member such as a conductive tape is attached to connect one end of the antistatic film to the ground pad. Thereafter, a conductive member is dotted in each of the contact area between one end of the connecting member and the antistatic film and the contact area between the other end of the connecting member and the ground pad for electrical connection. In contrast, as Figure 2 As shown, when the antistatic film 150 is directly disposed on the upper substrate 140, a connecting member for connecting the antistatic film 150 and the ground pad GND is not required. Furthermore, simply applying the conductive member AGP in a single process allows for electrical connection between the antistatic film 150 and the ground pad GND, without requiring conductive members to be applied to both ends of the connecting member. As a result, process efficiency can be improved and costs can be saved.

[0057] Hereinafter, a connection structure between the antistatic film 150 and the ground pad GND in the display device 100 according to the exemplary embodiment of the present disclosure will be described in detail.

[0058] Each of the lower substrate 110 and the upper substrate 140 may further extend outside the first polarizer 121 and the second polarizer 122. One end of the lower substrate 110 and the upper substrate 140 further extends outward from one end of the first polarizer 121 and the second polarizer 122.

[0059] One end of the lower substrate 110 may further extend to the outside from one end of the upper substrate 140. The ground pad GND is not covered by the upper substrate 140 but is provided on the exposed lower substrate 110.

[0060] As described above, the antistatic film 150 is directly disposed on the upper substrate 140. Therefore, one end of the antistatic film 150 may further extend from one end of the second polarizer 122 to the outside so as to correspond to the upper substrate 140.

[0061] A conductive member AGP is provided to electrically connect the upper surface of the antistatic film 150, which is exposed and not covered by the second polarizer 122, to the ground pad GND. The conductive member AGP extends from one end of the second polarizer 122 to the outside without contacting the end of the second polarizer 122, so as to directly contact the exposed upper surface of the antistatic film 150, which is not covered by the second polarizer 122, the side surface of the antistatic film 150, the side surface of the upper substrate 140, and the upper surface of the ground pad GND. As described above, the antistatic film 150 is connected to the ground pad GND via the conductive member AGP, so that the charge accumulated by static electricity generated in the display device 100 can be discharged to the outside.

[0062] For example, the conductive member AGP may be formed of a metal material selected from gold, silver, and copper. For example, the conductive member AGP may be formed by dispensing a conductive paste containing an adhesive bonding resin and silver (Ag), but is not limited thereto.

[0063] Hereinafter, the antistatic film 150 will be described in detail. The antistatic film 150 includes a silicon-based matrix, a polythiophene-based compound, and a dopant having a high boiling point. The polythiophene-based compound and the dopant having a high boiling point are dispersed in the silicon-based matrix.

[0064] Polythiophene-based compounds are conductive polymers that effectively discharge static electricity and do not reduce touch sensitivity (maintain high sensitivity). Materials such as ITO are transparent conductive metal materials used as antistatic films in the prior art. These materials have very low surface resistance to the discharged charge accumulated by touch, so they cannot accurately sense the capacitance changes caused by touch, thereby reducing touch sensitivity. In addition, compared with carbon nanotubes used as conductive materials in the prior art, polythiophene-based compounds have the advantages of excellent light transmittance and much lower cost. Therefore, when a polythiophene-based compound is used as a conductive material for the antistatic film 150, the light transmittance of the antistatic film 150 will be improved, thereby making the optical properties of the display device 100 excellent and saving manufacturing costs.

[0065] For example, the polythiophene-based compound may be poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) [PEDOT:PSS]. This is advantageous because it has excellent electrical conductivity, thereby effectively suppressing static electricity. If desired, the conductive material may also optionally include a conductive polymer selected from polyaniline, polyacetylene, polypyrrole, polythiophene, and polysulfur nitride.

[0066] For example, the average particle size of a polythiophene-based compound may be 30 nm to 70 nm or 50 ± 10 nm. Within this range, aggregation between particles is suppressed at high temperatures to suppress the localization of electrons caused by aggregation, thereby exhibiting stable resistance characteristics at high temperatures. Generally, in polythiophene-based compounds, aggregation between particles is caused by heat, which reduces the uniformity of particle distribution and, in this case, there is a problem of increased contact resistance. When the average particle size is about 50 ± 10 nm and the particle size distribution is uniform, aggregation between particles is suppressed, so that electrical characteristics can be stably maintained even at high temperatures.

[0067] Dopants with a high boiling point interfere with the interaction between polythiophene-based compounds, allowing the polythiophene-based compounds to be uniformly dispersed in a silicon-based matrix. Therefore, the electrical properties and high-temperature stability of the antistatic film 150 can be improved. Due to the interaction between the chains, polythiophene-based compounds have a high tendency to become entangled with each other. Therefore, polythiophene-based compounds are used in the form of PEDOT:PSS, in which poly(styrene sulfonic acid) is doped on polythiophene. However, even if polythiophene-based compounds are introduced in the form of PEDOT:PSS, the chains will become entangled at high temperatures, resulting in a problem of reduced high-temperature reliability. Dopants with a high boiling point further weaken the interaction between the PEDOT:PSS chains and inhibit aggregation, thereby improving electrical properties and high-temperature stability.

[0068] For example, the dopant with a high boiling point can be a compound with a boiling point of 190°C to 260°C and a vapor pressure of 0.100 mmHg or less (25°C). In this case, the high-temperature reliability of the antistatic film 150 is more excellent. Specifically, for example, the dopant with a high boiling point can be one or more selected from ethylene glycol and diethylene glycol. These materials easily penetrate between the polythiophene chains and interact with each of the polythiophene and poly(styrene sulfonic acid) chains, so that the polymer chains do not aggregate but maintain a linear structure. Therefore, the electrical properties and high-temperature stability of the antistatic film 150 can be improved.

[0069] The silicon-based matrix uniformly disperses the polythiophene-based compound and the dopant having a high boiling point, and imparts heat resistance and moisture resistance to the antistatic film 150. The silicon-based matrix can be formed by a sol-gel reaction of a solution containing tetraalkoxysilane, glycidyloxyalkyltrialkoxysilane, aminoalkyltrialkoxysilane, (per)fluoroalkylalkoxysilane, and the compound represented by Chemical Formula 1.

[0070] [Chemical Formula 1]

[0071]

[0072] In Chemical Formula 1, R1 is selected from hydrogen, an alkyl group having 1 to 10 carbon atoms, and a branched alkyl group having 3 to 10 carbon atoms, n is an integer of 1 to 100 or 1 to 10, and m is an integer of 1 to 10.

[0073] The silicon-based matrix may be formed of a silane sol solution including an acid catalyst, an alcohol-based solvent, water, tetraalkoxysilane, glycidyloxyalkyltrialkoxysilane, aminoalkyltrialkoxysilane, (per)fluoroalkylalkoxysilane, and a compound represented by Chemical Formula 1.

[0074] Water is added to hydrolyze the alkoxysilane-based compound. An acid catalyst is added to promote the hydrolysis and crosslinking of water and the alkoxysilane-based compound. For example, the acid catalyst can be selected from hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid and acetic acid, but is not limited thereto. The alcohol-based solvent is the reaction medium, for example, can be selected from methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, sec-butanol, tert-butanol, n-pentanol, isopentanol, sec-pentanol, tert-pentanol, 1-ethyl-1-propanol, 2-methyl-1-butanol, n-hexanol or cyclohexanol.

[0075] An alkoxysilane-based compound is hydrolyzed in water, an acid catalyst, and an alcohol-based solvent to form a silane sol. The silane sol polymerizes and crosslinks through a condensation reaction to form a silicon-based matrix. A polythiophene-based compound and a high-boiling-point dopant are added to the silane sol solution and uniformly dispersed in the silicon-based matrix.

[0076] Hereinafter, each of the alkoxysilane-based compound and the compound represented by Chemical Formula 1 contained in the silane sol solution will be described.

[0077] Tetraalkoxysilane is included as a binder. Tetraalkoxysilane has the advantage of excellent adhesion to the upper substrate 140 as a base material. For example, tetraalkoxysilane can be selected from tetraethoxysilane, tetramethoxysilane, and tetra-n-propoxysilane.

[0078] Compared to conventional carbon nanotubes, polythiophene-based compounds, as conductive materials, have the advantages of being transparent and inexpensive, but suffer from relatively poor heat and moisture resistance. Therefore, despite their high price, carbon nanotubes are primarily used as antistatic film materials. Therefore, according to exemplary embodiments of the present disclosure, glycidyloxyalkyltrialkoxysilane and aminoalkyltrialkoxysilane are added to enhance the heat resistance of polythiophene-based compounds.

[0079] First, glycidyloxyalkyltrialkoxysilane is a curing additive for improving the heat resistance of polythiophene-based compounds. For example, when the polythiophene-based compound is PEDOT:PSS, the glycidyl group of glycidyloxyalkyltrialkoxysilane is Can react with the sulfonate groups (-SO3 - ) bonding. Therefore, PEDOT:PSS is not simply dispersed in the silicon-based matrix, but forms chemical bonds with the silicon-based matrix to improve electrical properties and heat resistance. In addition, glycidyloxyalkyltrialkoxysilane improves the reliability of the antistatic film 150 by suppressing oxidation of the polythiophene-based compound.

[0080] For example, the glycidyloxyalkyltrialkoxysilane may be at least one selected from (3-glycidyloxypropyl)triethoxysilane and (3-glycidyloxypropyl)trimethoxysilane.

[0081] The aminoalkyltrialkoxysilane improves the heat resistance of the antistatic film 150, thereby improving high-temperature reliability. In addition, the aminoalkyltrialkoxysilane improves adhesion to the upper substrate 140. For example, the aminoalkyltrialkoxysilane can be one or more selected from (3-aminopropyl)triethoxysilane and (2-aminoethyl-3-aminopropyl)trimethoxysilane.

[0082] When glycidyloxyalkyltrialkoxysilane and aminoalkyltrialkoxysilane are added together, heat resistance can be significantly improved compared to when only one of them is added due to a synergistic effect. Figure 3 To describe in detail. Figure 3 The graph shows the change in surface resistance of the antistatic film over time, depending on the presence of glycidyloxyalkyltrialkoxysilane and / or aminoalkyltrialkoxysilane. Figure 3 Among them, sample A is an antistatic film in which PEDOT:PSS is dispersed in a silicon-based matrix that does not contain both (3-glycidyloxypropyl)trimethoxysilane (GOPS) and aminoalkyltrialkoxysilane (ATS). Sample B is an antistatic film in which PEDOT:PSS is dispersed in a silicon-based matrix containing GOPS. Sample C is an antistatic film in which PEDOT:PSS is dispersed in a silicon-based matrix containing both GOPS and ATS. The surface resistance was measured immediately after the antistatic film according to each of sample A, sample B and sample C was manufactured, the antistatic film was stored under a temperature of 105°C, and the surface resistance was measured every time a predetermined time had passed. The surface resistance was measured using an ST-4 surface resistivity meter from SYMCO, Japan.

[0083] refer to Figure 3, it can be confirmed that in sample A that does not contain GOPS and ATS, the surface resistance increases sharply from the start of the high-temperature reliability evaluation, and the surface resistance continues to increase for 1000 hours without stabilizing. At the same time, in the case of sample B containing GOPS, even though the fluctuation range of the resistance is significantly smaller than that of sample A, it can be confirmed that the resistance continues to increase without stabilizing. In addition, in the case of sample C containing both GOPS and ATS, it can be confirmed that the resistance has hardly changed within 1000 hours, thereby stably maintaining the electrical characteristics at high temperatures. It can be seen that when glycidyloxyalkyltrialkoxysilane and aminoalkyltrialkoxysilane are added together, the electrical characteristics are stably maintained at high temperatures, thereby significantly improving the high-temperature reliability.

[0084] In an antistatic film comprising a polythiophene-based compound, when reliability was evaluated under high humidity conditions, a water film was formed from moisture from the beginning until 200 hours, causing a rapid decrease in resistance. However, the polymer swelled and decomposed due to moisture after a critical time, causing a continuous increase in resistance, thereby reducing electrical properties. Therefore, in this exemplary embodiment of the present disclosure, in order to supplement the weak moisture resistance of the polythiophene-based compound, a compound represented by Chemical Formula 1 and a (per)fluoroalkylalkoxysilane were added.

[0085] First, the compound represented by Chemical Formula 1 is a compound in which some atoms (groups) constituting the polyacrylate side chain are substituted with silanol groups. This compound is contained in a silane sol solution to react, and the silanol groups are polycondensed to form an organic-inorganic composite in which the polyacrylate is bonded to the silica particles. In addition, the silanol groups can also be polycondensed with another alkoxysilane-based compound contained in the silane sol solution.

[0086] [Chemical Formula 1]

[0087]

[0088] In Chemical Formula 1, R l is selected from hydrogen, an alkyl group having 1 to 10 carbon atoms, and a branched alkyl group having 3 to 10 carbon atoms, n is an integer from 1 to 100 or from 1 to 10, and m is an integer from 1 to 10.

[0089] The silica particles formed by polycondensation of the silanol groups of the compound represented by Chemical Formula 1 have a porous structure and absorb moisture to suppress decomposition of the polythiophene-based compound by moisture. Therefore, the high humidity reliability of the antistatic film 150 can be improved.

[0090] The compound represented by Chemical Formula 1 has a relatively hydrophilic property to absorb water, thereby suppressing the degradation of the antistatic film 150, but the (per)fluoroalkyl alkoxysilane has a water repellency to suppress the penetration of water. The (per)fluoroalkyl group of the (per)fluoroalkyl alkoxysilane has a strong hydrophobic property to suppress the penetration of water. In addition, the (per)fluoroalkyl group is a functional group with excellent heat resistance, which contributes to the improvement of heat resistance.

[0091] For example, the (per)fluoroalkylalkoxysilane may be a compound represented by the following Chemical Formula 2.

[0092] [Chemical Formula 2]

[0093]

[0094] In Chemical Formula 2, R2, R3, and R4 are independently selected from an alkyl group having 1 to 10 carbon atoms and a branched alkyl group having 3 to 10 carbon atoms, a is an integer of 1 to 10, and b is an integer of 1 to 10.

[0095] The alkoxysilane group of the (per)fluoroalkylalkoxysilane interacts and chemically bonds with another alkoxysilane-based compound contained in the silane sol solution. Therefore, even if the alkoxysilane group contains a hydrophobic functional group, it can be well dispersed in the silane sol solution without causing phase separation.

[0096] When the compound represented by Chemical Formula 1 and (per)fluoroalkylalkoxysilane are added together, moisture resistance can be significantly improved due to a synergistic effect, compared to the advantage of adding only one of them to provide high humidity reliability.

[0097] The silicon-based matrix may be formed to further include a random silsesquioxane compound, a cage type silsesquioxane compound, or both. Including random silsesquioxane compounds and / or cage type silsesquioxane compounds further improves the density and hardness of the antistatic film 150, resulting in excellent reliability.

[0098] A random silsesquioxane compound and / or a cage silsesquioxane compound are added to the silane sol solution. The alkoxysilane-based compound is hydrolyzed by water and an acid catalyst to form silanol, and the silanol can react with the -OH group of the silsesquioxane compound to be bonded.

[0099] The antistatic film 150 can be formed by applying an antistatic film coating solution on the upper substrate 140 and curing it, wherein a polythiophene-based compound and a dopant having a high boiling point are added to the above-mentioned silane sol solution containing an acid catalyst, an alcohol solvent, water, tetraalkoxysilane, glycidyloxyalkyltrialkoxysilane, aminoalkyltrialkoxysilane, (per)fluoroalkylalkoxysilane, and a compound represented by Chemical Formula 1. For example, the antistatic film coating solution can be applied to the upper substrate 140 by a known method such as a slit coating method, a blade coating method, a spin coating method, a casting method, a micro-gravure coating method, a gravure coating method, a rod coating method, a roller coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a gravure printing method, a flexographic printing method, an offset printing method, an inkjet coating method, a dispenser printing method, a nozzle coating method, and a capillary coating method. After application, the antistatic film coating solution is heated at a predetermined temperature to be cured to form the antistatic film 150 .

[0100] If necessary, additives such as a leveling agent, a silane coupling agent, a dispersant, and a surfactant may also be optionally added to the antistatic film coating solution.

[0101] For example, the surface resistance of the antistatic film 150 may be 10 7 Ω / □(Ω / sq) to 10 9 Ω / □. Therefore, the display device 100 according to the exemplary embodiment of the present disclosure provides the advantages of excellent touch sensitivity and excellent electrostatic discharge performance. When the surface resistance of the antistatic film 150 is too low, the voltage generated when the user touches the display device 100 is discharged by the antistatic film 150, resulting in a significant decrease in touch sensitivity. When the surface resistance of the antistatic film 150 is too high, the touch sensitivity is excellent, but a problem may arise that the static electricity generated during the manufacturing of the display device 100 or when the display device 100 is used is too slow to discharge or is not discharged.

[0102] The antistatic film 150 according to the exemplary embodiment of the present disclosure includes a polythiophene-based compound that is cheaper than conventional transparent conductive materials such as ITO or carbon nanotubes, making it possible to significantly reduce the manufacturing cost of the display device. In addition, according to the present disclosure, in order to supplement the poor heat resistance and moisture resistance of the polythiophene-based compound, a dopant with a high boiling point and a silicon-based matrix with a specific composition are used. By doing so, when evaluating high temperature and high humidity reliability, high electrical characteristics can be maintained for a long time.

[0103] For example, the difference between the maximum and minimum surface resistance values ​​measured for 1000 hours at a temperature of 60°C and a relative humidity of 90% is 0.5 x 10 7 Ω / □ or lower, so that the surface resistance can be stably maintained even under high temperature and high humidity conditions.

[0104] Hereinafter, the effects of the present disclosure will be described in more detail with reference to Examples. However, the following Examples are given to illustrate the present disclosure, but the scope of the present disclosure is not limited thereto.

[0105] [Reference Example 1]

[0106] In a reflux reactor, tetraethoxysilane (TEOS) and ethanol were added and mixed in the parts by weight listed in Table 1. Water was added and stirred, and then a 3.5% aqueous hydrochloric acid solution was slowly added dropwise. Next, (3-glycidoxypropyl)trimethoxysilane (GOPS), (3-aminopropyl)triethoxysilane (ATS), PEDOT:PSS, ethylene glycol (EG), and a leveling agent were added in the parts by weight listed in Table 1 to prepare an antistatic film coating solution. The antistatic film coating solution was spin-coated onto a glass substrate (400 rpm, 15 seconds), heated at 140°C for 10 minutes, and dried in a hot air dryer for 30 minutes to form an antistatic film.

[0107] [Reference Example 2], [Reference Example 3] and [Comparative Example 1]

[0108] An antistatic film was formed by the same method as Reference Example 1, except that the antistatic film coating solution materials were added as described in Table 1.

[0109] [Table 1]

[0110] Comparative Example 1 Reference Example 1 Reference Example 2 Reference Example 3 PEDOT:PSS 2.5 2.5 2.5 2.5 TEOS 1.0 1.0 1.0 1.0 ethanol 96.1 96.0 95.9 95.8 EG 0.1 0.1 0.1 0.1 GOPS - 0.1 0.1 0.2 ATS - - 0.1 0.1 Leveling agent 0.3 0.3 0.3 0.3

[0111] [Experimental Example 1]

[0112] In order to evaluate the high temperature reliability of the antistatic film according to Comparative Example 1 and Reference Examples 1 to 3, the surface resistance was measured immediately after the sample was prepared, stored at a high temperature of 105°C, and the surface resistance was measured every time a predetermined time had passed. The surface resistance was measured using a ST-4 surface resistance meter from SYMCO, Japan. The results are shown in Tables 2 and 3. Figure 4 . Figure 4 The change in surface resistance of the antistatic film according to each of Comparative Example 1 and Reference Examples 1 to 3 over time is shown.

[0113] [Table 2]

[0114] Comparative Example 1 Reference Example 1 Reference Example 2 Reference Example 3 0 hours <![CDATA[6.2x10 7 ]]> <![CDATA[6.2x10 7 ]]> <![CDATA[6.2x10 7 ]]> <![CDATA[6.2x10 7 ]]> 240 hours 7.5 x 10 7 ]]> 6.4 x 10 7 ]]> <![CDATA[6.3x10 7 ]]> <![CDATA[6.3x10 7 ]]> 480 hours <![CDATA[9.0x10 7 ]]> <![CDATA[6.6x10 7 ]]> <![CDATA[6.3x10 7 ]]> <![CDATA[6.5x10 7 ]]> 720 hours 9.7 x 10 7 ]] <![CDATA[6.9x10 7 ]]> <![CDATA[6.3x10 7 ]]> <![CDATA[6.7x10 7 ]]> 1000 hours <![CDATA[10.5x10 7 ]]> 7.0 x 10 7 ]] 6.4 x 10 7 ]]> 6.8 x 10 7 ]]>

[0115] (Unit of surface resistance: Ω / □)

[0116] Table 2 and Figure 4Together, it was confirmed that in Comparative Example 1, which did not contain both GOPS and ATS, the surface resistance increased rapidly from the start of the high-temperature reliability evaluation compared to Reference Examples 1 to 3. Furthermore, the surface resistance did not stabilize within 1000 hours but continued to increase.

[0117] Reference Examples 1 to 3, each containing at least one of GOPS and ATS, demonstrated a narrow and stable resistance variation range compared to Comparative Example 1. Furthermore, Reference Examples 1 and 2, each containing both GOPS and ATS, demonstrated superior high-temperature reliability. Specifically, Reference Example 2, containing the same amounts of GOPS and ATS, demonstrated the smallest resistance variation range and the best high-temperature reliability.

[0118] In order to understand not only the improvement effect of high temperature reliability but also the improvement effect of high humidity reliability, the compound represented by Chemical Formula 1 and / or Chemical Formula 2 was also included to produce an antistatic film, and the high temperature and high humidity reliability evaluation was performed. For reference, in order to compare the high temperature and high humidity reliability improvement effect depending on the presence of specific compounds, the antistatic films according to Comparative Example 1 and Reference Example 2 were also evaluated for high temperature and high humidity reliability.

[0119] [Example 1]

[0120] In a reflux reactor, tetraethoxysilane (TEOS) and ethanol were added and mixed in parts by weight as described in Table 1, stirred after adding water, and then a 3.5% aqueous hydrochloric acid solution was slowly added dropwise. Next, (3-glycidyloxypropyl) trimethoxysilane (GOPS), (3-aminopropyl) triethoxysilane (ATS), a compound represented by Chemical Formula 1, PEDOT:PSS, ethylene glycol (EG), and a leveling agent were added in parts by weight as described in Table 1 to prepare an antistatic film coating solution. The antistatic film coating solution was spin-coated on a glass substrate (400 rpm, 15 seconds), heated at 140°C for 10 minutes, and dried with a hot air dryer for 30 minutes to form an antistatic film.

[0121] [Example 2] and [Example 3]

[0122] An antistatic film was formed by the same method as in Example 1, except that the antistatic film coating solution materials were added as described in Table 3.

[0123] [Table 3]

[0124] Comparative Example 1 Reference Example 2 Example 1 Example 2 Example 3 PEDOT:PSS 2.5 2.5 2.5 2.5 2.5 TEOS 1.0 1.0 1.0 1.0 1.0 ethanol 96.1 95.9 95.4 95.4 94.9 EG 0.1 0.1 0.1 0.1 0.1 GOPS - 0.1 0.1 0.1 0.1 ATS - 0.1 0.1 0.1 0.1 Chemical formula 1 - - 0.5 - 0.5 Chemical formula 2 - - - 0.5 0.5 Leveling agent 0.3 0.3 0.3 0.3 0.3

[0125] (In Table 3, the content unit of each component is part by weight and is based on 100 parts by weight, which is the total weight of all components.)

[0126] [Experimental Example 2]

[0127] In order to evaluate the high temperature and high humidity reliability of the antistatic film according to each of Examples 1 to 3, Comparative Example 1, and Reference Example 2, the surface resistance was measured immediately after the sample was prepared, stored under conditions of a high temperature of 60°C and a relative humidity of 90%, and the surface resistance was measured every time a predetermined time had passed. The surface resistance was measured using a ST-4 surface resistance meter from SYMCO, Japan. The results are shown in Tables 4 and Figure 5 . Figure 5 The graph shows a change in surface resistance of the antistatic film according to each of Examples 1 to 3, Comparative Example 1, and Reference Example 2 over time.

[0128] [Table 4]

[0129] Comparative Example 1 Reference Example 2 Example 1 Example 2 Example 3 0 hours 6.2*10 7 ]]> <![CDATA[6.2*10 7 ]]> 6.2*10 7 ]]> <![CDATA[6.2*10 7 ]]> <![CDATA[6.2*10 7 ]]> 240 hours <![CDATA[5.2*10 7 ]]> <![CDATA[5.2*10 7 ]]> <![CDATA[5.9*10 7 ]]> 5.6*10 7 ]]> <![CDATA[6.2*10 7 ]]> 480 hours <![CDATA[5.5*10 7 ]]> 5.3*10 7 ]]> <![CDATA[5.8*10 7 ]]> <![CDATA[5.9*10 7 ]]> <![CDATA[6.3*10 7 ]]> 720 hours <![CDATA[5.9*10 7 ]]> <![CDATA[5.7*10 7 ]]> <![CDATA[6.3*10 7 ]]> <![CDATA[6.4*10 7 ]]> <![CDATA[6.3*10 7 ]]> 1000 hours <![CDATA[6.6*10 7 ]]> <![CDATA[6.3*10 7 ]]> <![CDATA[6.5*10 7 ]]> <![CDATA[6.6*10 7 ]]> <![CDATA[6.4*10 7 ]]>

[0130] (Unit of surface resistance: Ω / □)

[0131] Referring to Table 4 together, it was confirmed that the surface resistance measured immediately after the antistatic film according to each of Examples 1 to 3, Reference Example 2, and Comparative Example 1 was manufactured was equal. Figure 5 Together, it can be confirmed that the antistatic film of Example 3 has almost no change in surface resistance over 1000 hours under high temperature and high humidity conditions, thereby stably maintaining electrical properties. That is, when all of GOPS, ATS, the compound of Chemical Formula 1, and the compound of Chemical Formula 2 are included, high temperature and high humidity properties are simultaneously improved.

[0132] In contrast, the antistatic film of Comparative Example 1, which was manufactured without GOPS, ATS, the compound of Chemical Formula 1, and the compound of Chemical Formula 2, showed a sharp decrease in surface resistance at the start of the reliability evaluation and a sharp increase after 240 hours. Therefore, it was confirmed that the electrical characteristics were unstable under high temperature and high humidity conditions.

[0133] In addition, in Reference Example 2 including GOPS and ATS, the high temperature and high humidity performance deteriorated compared with Examples 1 to 3, but the stability was slightly improved compared with Comparative Example 1.

[0134] Furthermore, in Example 1 comprising GOPS, ATS, and the compound of Chemical Formula 1, it was confirmed that the initial resistance change range was slower than that of Comparative Example 1 and Reference Example 2. Furthermore, in Example 2 comprising GOPS, ATS, and the compound of Chemical Formula 2, it was also confirmed that the initial resistance change range was smaller than that of Comparative Example 1 and Reference Example 2.

[0135] From the experimental examples, it was confirmed that GOPS, ATS, the compound of Chemical Formula 1, and the compound of Chemical Formula 2 supplemented the heat resistance and moisture resistance of PEDOT:PSS, thereby significantly improving the high temperature and high humidity reliability of the antistatic film.

[0136] Exemplary embodiments of the present disclosure may also be described as follows:

[0137] According to one aspect of the present disclosure, a display device includes a display panel; a first polarizer disposed below the display panel; a second polarizer disposed on the display panel; and an antistatic film disposed between the display panel and the second polarizer, wherein the antistatic film includes a silicon-based matrix, and a polythiophene-based compound and a dopant having a high boiling point dispersed in the silicon-based matrix, and the silicon-based matrix includes tetraalkoxysilane, glycidyloxyalkyltrialkoxysilane and aminoalkyltrialkoxysilane, wherein the silicon-based matrix is ​​cured or to be cured.

[0138] The silicon-based matrix may preferably be cured and further include one or more (per)fluoroalkylalkoxysilanes and a compound represented by the following Chemical Formula 1:

[0139] [Chemical Formula 1]

[0140]

[0141] In Chemical Formula 1, R1 may be selected from hydrogen, an alkyl group having 1 to 10 carbon atoms, and a branched alkyl group having 3 to 10 carbon atoms, n is an integer of 1 to 10, and m may be an integer of 1 to 10.

[0142] The polythiophene-based compound may be poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) [PEDOT:PSS].

[0143] The dopant having a high boiling point may be a compound having a boiling point of 190° C. to 260° C. and a vapor pressure (25° C.) of 0.100 mmHg or less.

[0144] The dopant having a high boiling point may be one or more selected from ethylene glycol and diethylene glycol.

[0145] The glycidyloxyalkyltrialkoxysilane may be one or more selected from (3-glycidyloxypropyl)triethoxysilane and (3-glycidyloxypropyl)trimethoxysilane.

[0146] The aminoalkyltrialkoxysilane may be one or more selected from (3-aminopropyl)triethoxysilane and (2-aminoethyl-3-aminopropyl)trimethoxysilane.

[0147] The (per)fluoroalkylalkoxysilane may be a compound represented by the following Chemical Formula 2.

[0148] [Chemical Formula 2]

[0149]

[0150] In Chemical Formula 2, R2, R3, and R4 may be independently selected from an alkyl group having 1 to 10 carbon atoms and a branched alkyl group having 3 to 10 carbon atoms, a may be an integer of 1 to 10, and b may be an integer of 1 to 10.

[0151] The silicon-based matrix may preferably be cured and further include a random-type silsesquioxane compound, a cage-type silsesquioxane compound, or both.

[0152] The display panel may include a lower substrate arranged on a first polarizer; a liquid crystal layer arranged on the lower substrate; and an upper substrate arranged on the liquid crystal layer, wherein the antistatic film and one end of the upper substrate may be further extended to the outside from one end of the second polarizer, and one end of the lower substrate may be further extended to the outside from one end of the upper substrate and the antistatic film.

[0153] The display device may further include a ground pad provided on the lower substrate, the lower substrate further extending from the upper substrate and the antistatic film to the outside; and a conductive member connecting the antistatic film and the ground pad.

[0154] The conductive member may be in direct contact with an upper surface of the antistatic film extending beyond the second polarizer and the ground pad, and is disposed to cover side surfaces of the antistatic film and the upper substrate.

[0155] The display panel may be an embedded touch type display panel having an embedded touch sensor.

[0156] The difference between the maximum and minimum surface resistance of the antistatic film measured at a temperature of 60°C and a relative humidity of 90% for 1000 hours can be 0.5x10 7 Ω / □ or less.

[0157] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are exemplary in all aspects and do not limit the present disclosure. The scope of protection of the present disclosure should be interpreted based on the following claims, and all technical concepts within their equivalent scope should be interpreted as falling within the scope of the present disclosure.

Claims

1. A display device comprising: Display panel; a first polarizer disposed below the display panel; a second polarizer disposed on the display panel; and an antistatic film disposed between the display panel and the second polarizer, wherein the antistatic film comprises a silicon-based matrix, and a polythiophene-based compound and a dopant having a high boiling point dispersed in the silicon-based matrix, and the silicon-based matrix comprises tetraalkoxysilane, glycidyloxyalkyltrialkoxysilane, and aminoalkyltrialkoxysilane, wherein the silicon-based matrix is ​​cured or to be cured, The silicon-based matrix further comprises one or more of (per)fluoroalkylalkoxysilane and a compound represented by the following Chemical Formula 1: [Chemical Formula 1] In Chemical Formula 1, R1 is selected from hydrogen, an alkyl group having 1 to 10 carbon atoms, and a branched alkyl group having 3 to 10 carbon atoms, n is an integer of 1 to 10, and m is an integer of 1 to 10. 2 . The display device of claim 1 , wherein the silicon-based matrix is ​​cured. 3 . The display device according to claim 1 , wherein the polythiophene-based compound is poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) [PEDOT:PSS]. 4 . The display device according to claim 1 , wherein the dopant having a high boiling point is a compound having a boiling point of 190° C. to 260° C. and a vapor pressure of 0.100 mmHg or less at 25° C. 5 . The display device according to claim 3 , wherein the dopant having a high boiling point is one or more selected from ethylene glycol and diethylene glycol. 6 . The display device according to claim 1 , wherein the glycidyloxyalkyltrialkoxysilane is one or more selected from (3-glycidyloxypropyl)triethoxysilane and (3-glycidyloxypropyl)trimethoxysilane. 7 . The display device according to claim 1 , wherein the aminoalkyltrialkoxysilane is one or more selected from (3-aminopropyl)triethoxysilane and (2-aminoethyl-3-aminopropyl)trimethoxysilane.

8. The display device according to claim 1, wherein the (per)fluoroalkylalkoxysilane is a compound represented by the following Chemical Formula 2: [Chemical Formula 2] In Chemical Formula 2, R2, R3, and R4 are independently selected from an alkyl group having 1 to 10 carbon atoms and a branched alkyl group having 3 to 10 carbon atoms, a is an integer of 1 to 10, and b is an integer of 1 to 10. 9 . The display device according to claim 1 , wherein the silicon-based host further comprises a random-type silsesquioxane compound, a cage-type silsesquioxane compound, or both.

10. The display device according to claim 1, wherein the display panel comprises: a lower substrate disposed on the first polarizer; a liquid crystal layer disposed on the lower substrate; and an upper substrate disposed on the liquid crystal layer, One end of the antistatic film and the upper substrate further extends outside from one end of the second polarizer, and one end of the lower substrate further extends outside from one end of the upper substrate and the antistatic film.

11. The display device according to claim 10, further comprising: a ground pad disposed on the lower substrate, the lower substrate further extending from the upper substrate and the antistatic film to the outside; and A conductive member connects the antistatic film and the ground pad.

12. The display device according to claim 11, wherein the conductive member is in direct contact with an upper surface of the antistatic film extending beyond the second polarizer and the ground pad, and is disposed to cover side surfaces of the antistatic film and the upper substrate. 13 . The display device according to claim 1 , wherein the display panel is an embedded touch type display panel having an embedded touch sensor.

14. The display device according to claim 1, wherein the difference between the maximum and minimum values ​​of the surface resistance of the antistatic film measured for 1000 hours under the conditions of a temperature of 60° C. and a relative humidity of 90% is 0.5×10 7 Ω / □ or less.

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