Electrodeposition electrode structure, full-color display structure and preparation method thereof

Abstract

The application provides an electrodeposited electrode structure, a full-color display structure and a preparation method thereof. The preparation method comprises the following steps: forming a first electrode layer comprising a plurality of first electrode blocks on an insulating substrate, forming a first insulating layer; forming a second electrode layer comprising a plurality of second electrode blocks on the first insulating layer, the first and second electrode blocks being arranged at intervals in the horizontal direction; forming a second insulating layer; forming a plurality of first openings to expose the first electrode blocks; forming third electrode blocks in the first openings; forming a plurality of second openings to expose the second electrode blocks; and forming fourth electrode blocks in the second openings. The electrode prepared on a two-dimensional plane is changed into a three-dimensional electrode, the insulating layer between the electrodes is used to isolate the mutual influence between the electrodes, and the problem that the two-dimensional plane electrode is prone to short circuit is solved. Since the connecting lines of the two layers of electrodes can be arranged up and down, the arrangement area is saved, the pixel spacing is further reduced, and a color conversion film with higher resolution can be obtained.

Description

Technical Field

[0001] This invention belongs to the field of electronic display technology, and relates to an electrodeposition electrode structure, a full-color display structure, and a method for preparing the same. Background Technology

[0002] Monochromatic micro-LED light sources with red-green color conversion films are a relatively simple way to achieve full-color Micro-LEDs. Achieving a high-resolution color conversion film with large area, uniform light emission, and good monochromaticity is a challenge in this method. The current trend is to use nanoscale red and green quantum dots prepared by solution methods as the color conversion layer. Since the ligands on the surface of quantum dots can exhibit positive or negative charges, the quantum dots can move directionally in solution when different electric fields are applied to the substrate. By first fabricating the electrodes for electrodeposition on a transparent substrate, and then depositing the red and green quantum dots onto different electrodes, a large-area color conversion layer can be fabricated. However, as pixel sizes gradually shrink to around 5 micrometers, the fabrication process of electrodes on the substrate faces significant difficulties. Incomplete etching of transparent electrodes (such as indium tin oxide, ITO) or process instability can lead to short circuits between adjacent electrodes, affecting the electrodeposition effect. Summary of the Invention

[0003] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an electrodeposition electrode structure, a full-color display structure and its preparation method, to solve the problem in the prior art that as the pixel size shrinks, the electrode preparation becomes more difficult and short circuits easily occur, affecting the electrodeposition effect.

[0004] To achieve the above and other related objectives, the present invention provides a method for preparing an electrodeposition electrode, comprising the following steps:

[0005] An insulating substrate is provided, and a first electrode layer is formed on the insulating substrate, the first electrode layer including a plurality of first electrode blocks;

[0006] A first insulating layer covering the first electrode layer is formed on the insulating substrate;

[0007] A second electrode layer is formed on the first insulating layer. The second electrode layer includes a plurality of second electrode blocks, which are arranged at intervals from the first electrode blocks in the horizontal direction.

[0008] A second insulating layer is formed on the first insulating layer, covering the second electrode layer;

[0009] Multiple first openings are formed, the first openings penetrating the second insulating layer and the first insulating layer to expose the first electrode block;

[0010] A third electrode block is formed in the first opening, and the lower surface of the third electrode block is in contact with the upper surface of the first electrode block;

[0011] Multiple second openings are formed, the second openings penetrating the second insulating layer to expose the second electrode block;

[0012] A fourth electrode block is formed in the second opening, and the lower surface of the fourth electrode block is in contact with the upper surface of the second electrode block.

[0013] Optionally, the first electrode layer further includes a first connecting line, through which a plurality of first electrode blocks are connected in series; the second electrode layer further includes a second connecting line, through which a plurality of second electrode blocks are connected in series.

[0014] Optionally, in the step of forming the first opening, at least one third opening is also formed, the third opening penetrating the second insulating layer and the first insulating layer to expose the first connecting wire; in the step of forming the second opening, at least one fourth opening is also formed, the fourth opening penetrating the second insulating layer to expose the second connecting wire.

[0015] Optionally, in the step of forming the third electrode block, a first lead electrode is also formed in the third opening, and the lower surface of the first lead electrode contacts the upper surface of the first connecting line; in the step of forming the fourth electrode block, a second lead electrode is also formed in the fourth opening, and the lower surface of the second lead electrode contacts the upper surface of the second connecting line.

[0016] Optionally, forming the first electrode layer on the insulating substrate includes the following steps:

[0017] A first photoresist layer is formed on the insulating substrate;

[0018] A first photoresist pattern is formed to expose the insulating substrate to define the first electrode layer region;

[0019] A first electrode layer is formed on the first photoresist layer and in the region of the first electrode layer;

[0020] Remove the first photoresist layer and the first electrode layer thereon.

[0021] Optionally, forming the second electrode layer on the first insulating layer includes the following steps:

[0022] A second photoresist layer is formed on the first insulating layer;

[0023] A second photoresist pattern is formed to expose the first insulating layer to define the second electrode layer region;

[0024] A second electrode layer is formed on the second photoresist layer and in the region of the second electrode layer;

[0025] Remove the second photoresist layer and the second electrode layer thereon.

[0026] Optionally, forming the first opening and the third electrode block includes the following steps:

[0027] A third photoresist layer is formed on the second insulating layer;

[0028] A third photoresist pattern is formed to expose the second insulating layer to define the first sub-pixel region;

[0029] The second insulating layer and the first insulating layer are etched using the third photoresist layer as a mask to obtain the first opening;

[0030] A third electrode layer is formed on the third photoresist layer and in the first opening;

[0031] Remove the third photoresist layer and the third electrode layer thereon.

[0032] Optionally, forming the second opening and the fourth electrode block includes the following steps:

[0033] A fourth photoresist layer is formed on the second insulating layer;

[0034] A fourth photoresist pattern is formed to expose the second insulating layer to define the second sub-pixel region;

[0035] The second insulating layer is etched using the fourth photoresist layer as a mask to obtain the second opening;

[0036] A fourth electrode layer is formed on the fourth photoresist layer and in the second opening;

[0037] Remove the fourth photoresist layer and the fourth electrode layer thereon.

[0038] Optionally, the first electrode layer, the second electrode layer, the third electrode block, and the fourth electrode block each include a transparent conductive layer.

[0039] This invention also provides a method for preparing a full-color display structure, comprising the following steps:

[0040] Provide an electrode structure prepared by the method described in any one of the above-mentioned electrodeposition electrodes;

[0041] A red quantum dot layer and a green quantum dot layer are deposited on the third electrode block and the fourth electrode block, respectively, to obtain a color conversion layer.

[0042] The present invention also provides an electrodeposition electrode structure, comprising:

[0043] Insulating substrate;

[0044] A first electrode layer is located on the insulating substrate, and the first electrode layer includes a plurality of first electrode blocks;

[0045] A first insulating layer is located on the insulating substrate;

[0046] The second electrode layer is located on the first insulating layer. The second electrode layer includes a plurality of second electrode blocks, which are arranged at intervals from the first electrode blocks in the horizontal direction.

[0047] The second insulating layer is located on the first insulating layer;

[0048] Multiple third electrode blocks, wherein the lower surface of the third electrode block is in contact with the upper surface of the first electrode block;

[0049] Multiple fourth electrode blocks, the lower surface of the fourth electrode block is in contact with the upper surface of the second electrode block.

[0050] Optionally, the first electrode layer further includes a first connecting line, and a plurality of first electrode blocks are connected in series through the first connecting line, with the first insulating layer covering the first connecting line; the second electrode layer further includes a second connecting line, and a plurality of second electrode blocks are connected in series through the second connecting line, with the second insulating layer covering the second connecting line.

[0051] Optionally, the electrodeposition electrode structure further includes a first lead-out electrode and a second lead-out electrode, wherein the lower surface of the first lead-out electrode contacts the upper surface of the first connecting wire, and the lower surface of the second lead-out electrode contacts the upper surface of the second connecting wire.

[0052] Optionally, the first electrode layer, the second electrode layer, the third electrode block, and the fourth electrode block each include a transparent conductive layer.

[0053] The present invention also provides a full-color display structure, including a color conversion layer, wherein the color conversion layer includes the electrodeposition electrode structure as described in any of the above, and a red quantum dot layer and a green quantum dot layer are deposited on the third electrode block and the fourth electrode block, respectively.

[0054] As described above, the electrode deposition electrode structure, full-color display structure, and fabrication method of the present invention transform electrodes fabricated on a two-dimensional plane into three-dimensional electrodes. The insulating layer between the electrodes isolates their mutual influence, solving the problem of short circuits between electrodes caused by incomplete etching in two-dimensional planar electrodes. Since the lines connecting the two electrode layers can be arranged vertically, the arrangement area is saved, further reducing the pixel pitch and thus enabling a higher resolution color conversion film. Attached Figure Description

[0055] Figure 1 The diagram shown is a process flow chart of the method for preparing the electrodeposition electrode of the present invention.

[0056] Figure 2 The diagram shown is a top view of the insulating substrate provided by the method for preparing the electrodeposition electrode of the present invention.

[0057] Figure 3 The method for preparing the electrode deposition electrode of the present invention is shown to form a first photoresist layer 3 on the insulating substrate 1, and to form a first photoresist pattern 301 that exposes the insulating substrate 1 by photolithography processes such as exposure and development to define the first electrode layer region A.

[0058] Figure 4 The method for fabricating the electrode deposition electrode of the present invention is shown to form a first electrode layer 200 on the first photoresist layer 3 and the first electrode layer region A. The first electrode layer 200 may be a transparent conductive layer.

[0059] Figure 5 The method for preparing the electrode deposition electrode of the present invention is shown to remove the first photoresist layer 3 and the first electrode layer 200 thereon, wherein the portion of the first electrode layer 200 located in the first electrode layer region A is retained to form the first electrode layer.

[0060] Figure 6 The method for preparing the electrode deposition electrode of the present invention is shown to form a first insulating layer 4 covering the first electrode layer on the insulating substrate 1.

[0061] Figure 7 The method for preparing the electrode deposition electrode of the present invention is shown to form a second photoresist layer 6 on the first insulating layer 4, and to form a second photoresist pattern 601 that exposes the first insulating layer 4 by photolithography processes such as exposure and development to define the second electrode layer region B.

[0062] Figure 8 The method for preparing the electrode deposition electrode of the present invention is shown to form a second electrode layer 500 on the second photoresist layer 6 and the second electrode layer region B.

[0063] Figure 9 The method for preparing the electrode deposition electrode of the present invention involves removing the second photoresist layer 6 and the second electrode layer 500 thereon, while the portion of the second electrode layer 500 located in the second electrode layer region B is retained to form the second electrode layer.

[0064] Figure 10The method for preparing the electrode deposition electrode of the present invention is shown to form a second insulating layer 7 covering the second electrode layer on the first insulating layer 4.

[0065] Figure 11 The method for preparing the electrode deposition electrode of the present invention shows that a plurality of first openings 8 are formed, the first openings 8 penetrating the second insulating layer 7 and the first insulating layer 4 to expose the first electrode block 201.

[0066] Figure 12 The method for preparing the electrode deposition electrode of the present invention shows that a third electrode block 11 is formed in the first opening 8, and the lower surface of the third electrode block 11 is in contact with the upper surface of the first electrode block 201.

[0067] Figure 13 The method for preparing the electrode deposition electrode of the present invention shows that a plurality of second openings 13 are formed, the second openings 13 penetrating the second insulating layer 7 to expose the second electrode block 501.

[0068] Figure 14 The method for preparing the electrode deposition electrode of the present invention is shown to form a fourth electrode block 16 in the second opening 13, wherein the lower surface of the fourth electrode block 16 is in contact with the upper surface of the second electrode block 501.

[0069] Figure 15 The diagram shown is a three-dimensional structural schematic of the electrode deposition electrode structure of the present invention.

[0070] Figure 16 The diagram shows a three-dimensional structural schematic of the conductive structure (i.e., the insulating layer has been removed) in the electrodeposition electrode structure of the present invention.

[0071] Component designation explanation

[0072] Steps S1 to S8

[0073] 1 Insulating substrate

[0074] 200 First electrode layer

[0075] 201 First Electrode Block

[0076] 202 First connecting line

[0077] 3 First photoresist layer

[0078] 301 First photoresist pattern

[0079] 4 First Insulation Layer

[0080] 500 Second electrode layer

[0081] 501 Second Electrode Block

[0082] 502 Second Connector

[0083] 6 Second photoresist layer

[0084] 7 Second Insulation Layer

[0085] 8 First opening

[0086] 9 Third photoresist layer

[0087] 10 Third opening

[0088] 11 Third electrode block

[0089] 12 First lead-out electrode

[0090] 13 Second opening

[0091] 14 Fourth photoresist layer

[0092] 15. Fourth opening

[0093] 16 The fourth electrode block

[0094] 17 Second lead-out electrode

[0095] A First electrode layer region

[0096] B. Second electrode layer region Detailed Implementation

[0097] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0098] Please see Figures 1 to 16 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0099] Example 1

[0100] This embodiment provides a method for preparing an electrodeposition electrode. Please refer to [link to relevant documentation]. Figure 1 The diagram shows the process flow of this method, which includes the following steps:

[0101] S1: An insulating substrate is provided, and a first electrode layer is formed on the insulating substrate, the first electrode layer including a plurality of first electrode blocks;

[0102] S2: Form a first insulating layer covering the first electrode layer on the insulating substrate;

[0103] S3: A second electrode layer is formed on the first insulating layer. The second electrode layer includes a plurality of second electrode blocks, which are arranged at intervals with the first electrode blocks in the horizontal direction.

[0104] S4: Form a second insulating layer covering the second electrode layer on the first insulating layer;

[0105] S5: Form a plurality of first openings, the first openings penetrating the second insulating layer and the first insulating layer to expose the first electrode block;

[0106] S6: A third electrode block is formed in the first opening, and the lower surface of the third electrode block is in contact with the upper surface of the first electrode block;

[0107] S7: Form a plurality of second openings, the second openings penetrating the second insulating layer to expose the second electrode block;

[0108] S8: A fourth electrode block is formed in the second opening, and the lower surface of the fourth electrode block is in contact with the upper surface of the second electrode block.

[0109] Please refer to the following first. Figures 2 to 5 Step S1 is performed: an insulating substrate 1 is provided, and a first electrode layer is formed on the insulating substrate 1. The first electrode layer includes a plurality of first electrode blocks 201.

[0110] Specifically, such as Figure 2 The diagram shown is a top view of the provided insulating substrate 1. The insulating substrate 1 can be a glass substrate or a substrate of other suitable materials.

[0111] like Figure 3 As shown, a first photoresist layer 3 is formed on the insulating substrate 1 by spin coating or other suitable methods, and a first photoresist pattern 301 is formed to expose the insulating substrate 1 by photolithography processes such as exposure and development to define the first electrode layer region A.

[0112] like Figure 4As shown, a first electrode layer 200 is formed on the first photoresist layer 3 and the first electrode layer region A using magnetron sputtering or other suitable methods. The first electrode layer 200 may be a transparent conductive layer. In this embodiment, the first electrode layer 200 is an ITO layer with a thickness of 100 nm. In other embodiments, the material and thickness of the first electrode layer 200 may be adjusted as needed.

[0113] like Figure 5 As shown, the first photoresist layer 3 and the first electrode layer 200 thereon are removed to expose the insulating substrate 1, while the portion of the first electrode layer 200 located in the first electrode layer region A is retained.

[0114] In this embodiment, the first electrode layer includes not only the first electrode block 201, but also a first connecting line 202, and multiple first electrode blocks 201 are connected in series through the first connecting line 201.

[0115] Please see again Figure 6 Step S2 is performed: a first insulating layer 4 covering the first electrode layer is formed on the insulating substrate 1 by chemical vapor deposition, physical vapor deposition or other suitable methods.

[0116] In this embodiment, the first insulating layer 4 is a silicon dioxide layer with a thickness of 300 nm. In other embodiments, the material and thickness of the first insulating layer 4 can be adjusted as needed.

[0117] Please see again Figures 7 to 9 Step S3 is performed: a second electrode layer 500 is formed on the first insulating layer 4. The second electrode layer includes a plurality of second electrode blocks 501, and the second electrode blocks 501 and the first electrode blocks 201 are arranged at intervals in the horizontal direction.

[0118] Specifically, such as Figure 7 As shown, a second photoresist layer 6 is formed on the first insulating layer 4 by spin coating or other suitable methods, and a second photoresist pattern 601 is formed to expose the first insulating layer 4 by photolithography processes such as exposure and development to define the second electrode layer region B.

[0119] like Figure 8 As shown, a second electrode layer 500 is formed on the second photoresist layer 6 and the second electrode layer region B using magnetron sputtering or other suitable methods. The second electrode layer 500 may be a transparent conductive layer. In this embodiment, the second electrode layer 500 is an ITO layer with a thickness of 100 nm. In other embodiments, the material and thickness of the second electrode layer 500 may be adjusted as needed.

[0120] like Figure 9As shown, the second photoresist layer 6 and the second electrode layer 500 thereon are removed to expose the first insulating layer 4, while the portion of the second electrode layer 500 located in the second electrode layer region B is retained.

[0121] In this embodiment, the second electrode layer includes not only the second electrode block 501, but also a second connecting line 502, and multiple second electrode blocks 501 are connected in series through the second connecting line 501.

[0122] Please see again Figure 10 Step S4 is performed: a second insulating layer 7 covering the second electrode layer is formed on the first insulating layer 4 using chemical vapor deposition, physical vapor deposition or other suitable methods.

[0123] In this embodiment, the second insulating layer 7 is a silicon dioxide layer with a thickness of 300 nm. In other embodiments, the material and thickness of the second insulating layer 7 can be adjusted as needed.

[0124] Please see again Figure 11 Step S5 is performed: a plurality of first openings 8 are formed, the first openings 8 penetrating the second insulating layer 7 and the first insulating layer 4 to expose the first electrode block 201.

[0125] Specifically, a third photoresist layer 9 is first formed on the second insulating layer 7, and then a third photoresist pattern is formed to expose the second insulating layer 7 to define the first sub-pixel region. The second insulating layer 7 and the first insulating layer 4 are then etched using the third photoresist layer as a mask to obtain the first opening 8.

[0126] As an example, in the step of forming the first opening 8, at least a third opening 10 is also formed, the third opening 10 penetrating the second insulating layer 7 and the first insulating layer 4 to expose the first connecting line 202.

[0127] Please see again Figure 12 Step S6 is performed: a third electrode block 11 is formed in the first opening 8, and the lower surface of the third electrode block 11 is in contact with the upper surface of the first electrode block 201.

[0128] Specifically, a third electrode layer is first formed on the third photoresist layer 9 and in the first opening 8 using magnetron sputtering or other suitable methods. Then, the third photoresist layer 9 and the third electrode layer thereon are removed to expose the second insulating layer 7. The portion of the third electrode layer located in the first opening 8 is retained as the third electrode block 11.

[0129] As an example, the third electrode layer is made of the same material as the first electrode layer 200, that is, the third electrode block 11 is made of the same material as the first electrode block 201.

[0130] As an example, the third electrode layer is also formed in the third opening 10. After the third photoresist layer 9 and the third electrode layer thereon are removed, the portion of the third electrode layer located in the third opening 10 is retained to form the first lead electrode 12. The lower surface of the first lead electrode 12 is in contact with the upper surface of the first connecting line 202.

[0131] Please see again Figure 13 Step S7 is performed: a plurality of second openings 13 are formed, the second openings 13 penetrate the second insulating layer 7 to expose the second electrode block 501.

[0132] Specifically, firstly, a fourth photoresist layer 14 covering the third electrode block 11 and the first lead-out electrode 12 is formed on the second insulating layer 7. Then, a fourth photoresist pattern exposing the second insulating layer 7 is formed by photolithography to define the second sub-pixel region. Then, the second insulating layer 7 is etched using the fourth photoresist layer 14 as a mask to obtain the second opening 13.

[0133] As an example, in the step of forming the second opening 13, at least a fourth opening 15 is also formed, which penetrates the second insulating layer 7 to expose the second connecting line 502.

[0134] Please see again Figure 14 Then, perform step S8: form a fourth electrode block 16 in the second opening 13, with the lower surface of the fourth electrode block 16 in contact with the upper surface of the second electrode block 501.

[0135] Specifically, firstly, a fourth electrode layer is formed on the fourth photoresist layer 14 and in the second opening 13 using magnetron sputtering or other suitable methods. Then, the fourth photoresist layer 14 and the fourth electrode layer thereon are removed to expose the second insulating layer 7, the third electrode block 11 and the first lead-out electrode 12. The portion of the fourth electrode layer located in the second opening 13 is retained as the fourth electrode block 16.

[0136] As an example, the fourth electrode layer and the second electrode layer 500 are made of the same material, that is, the fourth electrode block 16 and the second electrode block 501 are made of the same material.

[0137] As an example, the fourth electrode layer is also formed in the fourth opening 15. After the fourth photoresist layer 14 and the fourth electrode layer thereon are removed, the portion of the fourth electrode layer located in the fourth opening 15 is retained to form the second lead electrode 17. The lower surface of the second lead electrode 17 is in contact with the upper surface of the second connection line 502.

[0138] Thus, an electrodeposition electrode structure has been fabricated. Please refer to [link / reference]. Figure 15 The image shown is a three-dimensional structural diagram of this electrodeposition electrode structure. Please refer to [link / reference]. Figure 16 The diagram shows a three-dimensional structural schematic of the conductive structure (i.e., the insulating layer removed) in the electrode deposition electrode structure of this invention. The electrode deposition electrode structure of this invention employs a three-dimensional electrode. Voltage can be applied to the first electrode layer and the second electrode layer separately. Due to the presence of the insulating layer, the two electrode layers do not affect each other, solving the problem of short circuits between electrodes caused by incomplete etching of the electrode layers during the fabrication of two-dimensional planar electrodes. Furthermore, since the connecting lines in the two electrode layers can be arranged vertically, the arrangement area is saved, which is beneficial for further reducing the pixel pitch, thereby enabling the acquisition of a higher resolution color conversion film.

[0139] Example 2

[0140] This embodiment provides an electrode deposition electrode structure, which can be prepared by the electrode deposition electrode preparation method described in Embodiment 1. The electrode deposition electrode structure includes an insulating substrate, a first electrode layer, a first insulating layer, a second electrode layer, a second insulating layer, a plurality of third electrode blocks, and a plurality of fourth electrode blocks. The first electrode layer is located on the insulating substrate and includes a plurality of first electrode blocks. The first insulating layer is located on the insulating substrate. The second electrode layer is located on the first insulating layer and includes a plurality of second electrode blocks. The second electrode blocks and the first electrode blocks are arranged at intervals in the horizontal direction. The second insulating layer is located on the first insulating layer. The lower surface of the third electrode block is in contact with the upper surface of the first electrode block. The lower surface of the fourth electrode block is in contact with the upper surface of the second electrode block.

[0141] As an example, the first electrode layer further includes a first connecting line, and a plurality of first electrode blocks are connected in series through the first connecting line, with the first insulating layer covering the first connecting line; the second electrode layer further includes a second connecting line, and a plurality of second electrode blocks are connected in series through the second connecting line, with the second insulating layer covering the second connecting line.

[0142] As an example, the electrodeposition electrode structure further includes a first lead-out electrode and a second lead-out electrode, wherein the lower surface of the first lead-out electrode contacts the upper surface of the first connecting line, and the lower surface of the second lead-out electrode contacts the upper surface of the second connecting line.

[0143] As an example, the first electrode layer, the second electrode layer, the third electrode block, and the fourth electrode block all include a transparent conductive layer.

[0144] Example 3

[0145] This embodiment provides a method for preparing a full-color display structure, including the following steps: providing an electrode deposition electrode structure prepared by the electrode deposition electrode preparation method described in Embodiment 1, and depositing a red quantum dot layer and a green quantum dot layer on the third electrode block 11 and the fourth electrode block 16 respectively by solution method to obtain a color conversion layer.

[0146] Specifically, by applying different electric fields to the first lead-out electrode 12 and the second lead-out electrode 17, different quantum dots are deposited on the third electrode block 11 and the fourth electrode block 16, respectively.

[0147] Specifically, a red quantum dot layer can be deposited on the third electrode block 11 and a green quantum dot layer can be deposited on the fourth electrode block 16, or a green quantum dot layer can be deposited on the third electrode block 11 and a red quantum dot layer can be deposited on the fourth electrode block 16.

[0148] Example 4

[0149] This embodiment provides a full-color display structure, which includes a color conversion layer. The color conversion layer includes the electrodeposition electrode structure described in Embodiment 2. A red quantum dot layer and a green quantum dot layer are deposited on the third electrode block and the fourth electrode block, respectively. Alternatively, the red quantum dot layer can be deposited on the third electrode block and the green quantum dot layer can be deposited on the fourth electrode block, or the green quantum dot layer can be deposited on the third electrode block and the red quantum dot layer can be deposited on the fourth electrode block.

[0150] In summary, the electrode deposition electrode structure, full-color display structure, and fabrication method of this invention transform electrodes fabricated on a two-dimensional plane into three-dimensional electrodes. By utilizing an insulating layer between the electrodes to isolate their mutual influence, the problem of short circuits between electrodes caused by incomplete etching in two-dimensional planar electrodes is solved. Since the connection lines between the two electrode layers can be arranged vertically, the arrangement area is saved, allowing for a further reduction in pixel spacing and thus enabling a higher resolution color conversion film. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0151] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for preparing an electrodeposition electrode, characterized in that, Includes the following steps: An insulating substrate is provided, and a first electrode layer is formed on the insulating substrate, the first electrode layer including a plurality of first electrode blocks; A first insulating layer covering the first electrode layer is formed on the insulating substrate; A second electrode layer is formed on the first insulating layer. The second electrode layer includes a plurality of second electrode blocks, which are arranged at intervals from the first electrode blocks in the horizontal direction. A second insulating layer is formed on the first insulating layer, covering the second electrode layer; Multiple first openings are formed, the first openings penetrating the second insulating layer and the first insulating layer to expose the first electrode block; A third electrode block is formed in the first opening, and the lower surface of the third electrode block is in contact with the upper surface of the first electrode block; Multiple second openings are formed, the second openings penetrating the second insulating layer to expose the second electrode block; A fourth electrode block is formed in the second opening, and the lower surface of the fourth electrode block is in contact with the upper surface of the second electrode block.

2. The method for preparing the electrodeposition electrode according to claim 1, characterized in that: The first electrode layer further includes a first connecting line, and a plurality of first electrode blocks are connected in series through the first connecting line; the second electrode layer further includes a second connecting line, and a plurality of second electrode blocks are connected in series through the second connecting line.

3. The method for preparing the electrodeposition electrode according to claim 2, characterized in that: In the step of forming the first opening, at least one third opening is also formed, the third opening penetrating the second insulating layer and the first insulating layer to expose the first connecting wire; in the step of forming the second opening, at least one fourth opening is also formed, the fourth opening penetrating the second insulating layer to expose the second connecting wire.

4. The method for preparing the electrodeposition electrode according to claim 3, characterized in that: In the step of forming the third electrode block, a first lead electrode is also formed in the third opening, and the lower surface of the first lead electrode contacts the upper surface of the first connecting line; in the step of forming the fourth electrode block, a second lead electrode is also formed in the fourth opening, and the lower surface of the second lead electrode contacts the upper surface of the second connecting line.

5. The method for preparing the electrodeposition electrode according to claim 1, characterized in that, Forming the first electrode layer on the insulating substrate includes the following steps: A first photoresist layer is formed on the insulating substrate; A first photoresist pattern is formed to expose the insulating substrate to define the first electrode layer region; A first electrode layer is formed on the first photoresist layer and in the region of the first electrode layer; Remove the first photoresist layer and the first electrode layer thereon.

6. The method for preparing the electrodeposition electrode according to claim 1, characterized in that, Forming the second electrode layer on the first insulating layer includes the following steps: A second photoresist layer is formed on the first insulating layer; A second photoresist pattern is formed to expose the first insulating layer to define the second electrode layer region; A second electrode layer is formed on the second photoresist layer and in the region of the second electrode layer; Remove the second photoresist layer and the second electrode layer thereon.

7. The method for preparing the electrodeposition electrode according to claim 1, characterized in that, Forming the first opening and the third electrode block includes the following steps: A third photoresist layer is formed on the second insulating layer; A third photoresist pattern is formed to expose the second insulating layer to define the first sub-pixel region; The second insulating layer and the first insulating layer are etched using the third photoresist layer as a mask to obtain the first opening; A third electrode layer is formed on the third photoresist layer and in the first opening; Remove the third photoresist layer and the third electrode layer thereon.

8. The method for preparing the electrodeposition electrode according to claim 1, characterized in that, Forming the second opening and the fourth electrode block includes the following steps: A fourth photoresist layer is formed on the second insulating layer; A fourth photoresist pattern is formed to expose the second insulating layer to define the second sub-pixel region; The second insulating layer is etched using the fourth photoresist layer as a mask to obtain the second opening; A fourth electrode layer is formed on the fourth photoresist layer and in the second opening; Remove the fourth photoresist layer and the fourth electrode layer thereon.

9. The method for preparing the electrodeposition electrode according to claim 1, characterized in that: The first electrode layer, the second electrode layer, the third electrode block, and the fourth electrode block all include a transparent conductive layer.

10. A method for preparing a full-color display structure, characterized in that, Includes the following steps: Provides an electrode structure prepared by the method for preparing an electrode deposition electrode as described in any one of claims 1-9; A red quantum dot layer and a green quantum dot layer are deposited on the third electrode block and the fourth electrode block, respectively, to obtain a color conversion layer.

11. An electrodeposition electrode structure, characterized in that, include: Insulating substrate; A first electrode layer is located on the insulating substrate, and the first electrode layer includes a plurality of first electrode blocks; A first insulating layer is located on the insulating substrate; The second electrode layer is located on the first insulating layer. The second electrode layer includes a plurality of second electrode blocks, which are arranged at intervals from the first electrode blocks in the horizontal direction. The second insulating layer is located on the first insulating layer; Multiple third electrode blocks, wherein the lower surface of the third electrode block is in contact with the upper surface of the first electrode block; Multiple fourth electrode blocks, the lower surface of the fourth electrode block is in contact with the upper surface of the second electrode block.

12. The electrode deposition electrode structure according to claim 11, characterized in that: The first electrode layer further includes a first connecting line, and a plurality of first electrode blocks are connected in series through the first connecting line, with the first insulating layer covering the first connecting line; the second electrode layer further includes a second connecting line, and a plurality of second electrode blocks are connected in series through the second connecting line, with the second insulating layer covering the second connecting line.

13. The electrodeposition electrode structure according to claim 12, characterized in that: The electrode deposition electrode structure further includes a first lead-out electrode and a second lead-out electrode, wherein the lower surface of the first lead-out electrode contacts the upper surface of the first connecting line, and the lower surface of the second lead-out electrode contacts the upper surface of the second connecting line.

14. The electrode deposition electrode structure according to claim 11, characterized in that: The first electrode layer, the second electrode layer, the third electrode block, and the fourth electrode block all include a transparent conductive layer.

15. A full-color display structure, comprising a color conversion layer, characterized in that: The color conversion layer includes the electrodeposition electrode structure as described in any one of claims 11-14, wherein a red quantum dot layer and a green quantum dot layer are deposited on the third electrode block and the fourth electrode block, respectively.

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